CN107904663A - A kind of crystalline silicon polishing additive and its application method for crystal silicon polishing - Google Patents
A kind of crystalline silicon polishing additive and its application method for crystal silicon polishing Download PDFInfo
- Publication number
- CN107904663A CN107904663A CN201711252222.2A CN201711252222A CN107904663A CN 107904663 A CN107904663 A CN 107904663A CN 201711252222 A CN201711252222 A CN 201711252222A CN 107904663 A CN107904663 A CN 107904663A
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- polishing
- crystalline silicon
- silicon polishing
- additive
- application method
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- PNOVPZMJNVXJST-UHFFFAOYSA-N C1C2C1CC[CH+]C2 Chemical compound C1C2C1CC[CH+]C2 PNOVPZMJNVXJST-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A kind of method the present invention relates to crystalline silicon polishing additive and its for crystal silicon polishing, belong to manufacture of solar cells technical field, by weight percentage, its raw material components receives for 0.01% 3% citric acids, 0.01% 3% palmitic acids, 0.001% 1% cetyl trimethyl amine oxides, the deionized water of 0.1% 2% tweens and surplus, additive needs to add when in use sodium oxide molybdena or potassium hydroxide and is made polishing fluid, and the percent by volume of additive and alkaline solution is 1.2:100‑5:100, the temperature of polishing fluid is 55 DEG C 80 DEG C, and crystalline silicon polishing time is 120s 300s.The present invention controls reaction speed using palmitic acid, while increases alkali concn, obtains lattice pedestal of uniform size, at the same time sodium citrate has metal complexation, there is cleaning action to silicon chip, and of low cost.
Description
Technical field
It is specially a kind of crystalline silicon polishing additive and its for crystalline substance the present invention relates to manufacture of solar cells technical field
The application method of body silicon polishing.
Background technology
In crystal silicon solar batteries piece preparation process, it is to improve solar battery sheet that polished backside is carried out to silicon chip
Performance and efficiency, it is necessary to the more smooth back side be made, so as to improve the transfer efficiency of solar cell.At present, industrialization is brilliant
Following three kinds are mainly used in the production polishing step of body silicon cell：1. nitric acid, hydrofluoric acid polish, this kind of method polishing reflection
Rate is relatively low, and production cost is higher, while environmental pollution is than more serious.2. tetramethylammonium hydroxide polishes, this kind of method reflectivity
It is higher, but polishing liquid cost is higher, than more serious, processing cost is higher for environmental pollution.3. concentrated base polishes, high concentration is used
Potassium hydroxide, the polishing of sodium hydroxide inorganic base, this kind of method technique is unstable, the bad control of reaction process, while alkali can be rotten
The silica of front side of silicon wafer is lost, so as to destroy front PN junction, causes battery failure.
The content of the invention
A kind of application method it is an object of the invention to provide crystalline silicon polishing additive and its for crystal silicon polishing,
To solve the problems mentioned in the above background technology.
To achieve the above object, the present invention provides following technical solution：A kind of crystalline silicon polishing additive, including below into
Point：Sodium citrate, palmitic acid, cetyl trimethyl amine oxide, tween and deionized water.
Preferably, its component to account for mass percent as follows：
Preferably, a kind of crystalline silicon polishing additive is used for the application method of crystal silicon polishing, it is characterised in that：
Suitable crystalline silicon polishing additive is chosen, adds suitable alkaline solution in crystalline silicon polishing additive, after hybrid reaction,
It is made into polishing fluid.
Preferably, the alkaline solution is the sodium hydroxide or potassium hydroxide solution of concentration 2.5%-10%.
Preferably, the percent by volume of the crystalline silicon polishing additive and alkaline solution is 1.2:100-5:100.
Preferably, the temperature of the polishing fluid is 55 DEG C -80 DEG C.
Preferably, reaction time of the crystalline silicon in polishing fluid is 120s-300s.
Compared with prior art, the beneficial effects of the invention are as follows：The present invention provides a kind of crystalline silicon polishing additive and
It is used for the application method of crystal silicon polishing.Corrosion rate of the alkali to silica can be greatly lowered in the additive, so as to protect
The PN junction of shield battery front side is not destroyed in etching process.The additive can also promote polishing effect of the alkali to back side silicon chip
Fruit, obtains more even curface.When being polished applied to crystal silicon chip, it is not necessary to use the nitric acid in traditional handicraft, hydrogen fluorine
Acid or tetramethylammonium hydroxide, can obtain excellent polishing effect, meanwhile, alkali and additive concentration are far below conventional buffer
Skill, non-volatile in production process, follow-up additive amount very little, can be greatly lowered production cost, eliminate using nitric acid, hydrogen fluorine
The environmental pollution that acid or tetramethylammonium hydroxide are brought and the harm to employee；Sodium citrate in its component, has gold
Belong to ion complexation ability, there is cleaning action to silicon chip, and it is of low cost, technique is simple, there is larger actual utility value.
Brief description of the drawings
Fig. 1 is the microphotograph of obtained silicon chip surface burnishing surface in the embodiment of the present invention 1；
Fig. 2 is the microphotograph of obtained silicon chip surface burnishing surface in the embodiment of the present invention 2；
Fig. 3 is the reflectance spectrum of obtained silicon chip surface burnishing surface in the embodiment of the present invention 1.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment, belongs to the scope of protection of the invention.
- 3 are please referred to Fig.1, the present invention provides following several technical solutions：
Embodiment 1
Crystalline silicon polishing additive is prepared, by 10g sodium citrates, 10g palmitic acids, 2g cetyl trimethyl amine oxides,
1.5ml tweens mixed dissolution obtains crystalline silicon polishing additive into 1L deionized waters.By 5000g sodium hydroxides, 1L is without crystal
Silicon polishing additive is added in 160L deionized waters, obtains polishing fluid.Polishing fluid is warming up to 65 DEG C, then by after diffusion
Go PSG silicon chips to immerse in polishing fluid to polish, polishing time 200s, the scanned Electronic Speculum detection lattice pedestal size of silicon chip of gained
For 10-30 μm, and without other pattern impurity.
Embodiment 2
Crystalline silicon polishing additive is prepared, by 15g sodium citrates, 15g palmitic acids, 3g cetyl trimethyl amine oxides,
2.25ml tweens mixed dissolution obtains crystalline silicon polishing additive into 1.5L deionized waters.By 4000g sodium hydroxides, 1.5L
Crystalline silicon polishing additive is added in 180L deionized waters, obtains polishing fluid.Polishing fluid is warming up to 75 DEG C, then will diffusion
Afterwards go PSG silicon chips to immerse in polishing fluid to polish, polishing time 120s, the scanned Electronic Speculum detection lattice pedestal of the silicon chip of gained
Size is 10-30 μm, and without other pattern impurity.
Embodiment 3
On the basis of embodiment 1, it is 3000g to change sodium hydroxide.
Embodiment 4
On the basis of embodiment 1, it is 300s to change the edge polishing time.
Embodiment 5
On the basis of embodiment 1, change polish temperature as 80 DEG C.
Embodiment 6
On the basis of embodiment 2, it is 4500g to change sodium hydroxide.
Embodiment 7
On the basis of embodiment 2, it is 180s to change polishing time.
Embodiment 8
On the basis of embodiment 2, change edge polishing temperature as 60 DEG C.
Design performance is tested
Obtained monocrystalline silicon piece in above-described embodiment 1-8 is subjected to reflectivity and corrosion thickness test, test method is as follows：
Reflectivity is tested on 8 degree of matte integration type reflectivity measurement instruments of standard of model Raditech D8；
First weigh a lower silicon slice before making herbs into wool in the balance, claim a lower silicon slice after making herbs into wool again, obtain loss of weight amount, then removed with loss of weight amount
With original weight amount, original thickness is multiplied by, obtains corrosion thickness；
Test result see the table below
| Embodiment | Reflectivity (%) | Corrosion thickness (μm) |
| Embodiment 1 | 48.6 | 10 |
| Embodiment 2 | 48.7 | 10.5 |
| Embodiment 3 | 48.2 | 10 |
| Embodiment 4 | 48.2 | 10.2 |
| Embodiment 5 | 48.2 | 10.3 |
| Embodiment 6 | 48.6 | 10 |
| Embodiment 7 | 48.1 | 10.3 |
| Embodiment 8 | 48.3 | 10.1 |
In conclusion the crystalline silicon polishing additive raw material dosage of the present invention is few, technique is simple, and obtained appearance and crystalline substance
Lattice seat is good.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of changes, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (7)
1. a kind of crystalline silicon polishing additive, it is characterised in that including following component：Sodium citrate, palmitic acid, cetyl three
Methyl oxidation amine, tween and deionized water.
2. a kind of crystalline silicon polishing additive according to claim 1, it is characterised in that its component accounts for mass percent
It is as follows：
3. a kind of crystalline silicon polishing additive according to claim 1-2 is used for the application method of crystal silicon polishing, it is special
Sign is：Suitable crystalline silicon polishing additive is chosen, suitable alkaline solution is added in crystalline silicon polishing additive, is mixed
After reaction, polishing fluid is made into.
4. a kind of crystalline silicon polishing additive according to claim 3 is used for the application method of crystal silicon polishing, its feature
It is：The alkaline solution is the sodium hydroxide or potassium hydroxide solution of concentration 2.5%-10%.
5. a kind of crystalline silicon polishing additive according to claim 3 is used for the application method of crystal silicon polishing, its feature
It is：The percent by volume of the crystalline silicon polishing additive and alkaline solution is 1.2:100-5:100.
6. a kind of crystalline silicon polishing additive according to claim 3 is used for the application method of crystal silicon polishing, its feature
It is：The temperature of the polishing fluid is 55 DEG C -80 DEG C.
7. a kind of crystalline silicon polishing additive according to claim 3 is used for the application method of crystal silicon polishing, its feature
It is：Reaction time of the crystalline silicon in polishing fluid is 120s-300s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201711252222.2A CN107904663A (en) | 2017-12-01 | 2017-12-01 | A kind of crystalline silicon polishing additive and its application method for crystal silicon polishing |
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| CN201711252222.2A CN107904663A (en) | 2017-12-01 | 2017-12-01 | A kind of crystalline silicon polishing additive and its application method for crystal silicon polishing |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584687A (en) * | 2020-06-09 | 2020-08-25 | 山西潞安太阳能科技有限责任公司 | Novel method for realizing LDSE (laser direct ion exchanger) by alkali throwing |
| CN112111279A (en) * | 2020-08-13 | 2020-12-22 | 天津爱旭太阳能科技有限公司 | Additive for alkali polishing in solar cell preparation and polishing process |
| CN113668067A (en) * | 2021-08-19 | 2021-11-19 | 常州时创能源股份有限公司 | Additive for alkali polishing of monocrystalline silicon piece and application thereof |
| CN114316804A (en) * | 2021-12-15 | 2022-04-12 | 嘉兴市小辰光伏科技有限公司 | Additive for improving monocrystalline silicon alkali polishing appearance problem and polishing process thereof |
| CN114316634A (en) * | 2021-12-15 | 2022-04-12 | 焦作市和兴化学工业有限公司 | Preparation method of high-structure acetylene carbon black |
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| CN104498954A (en) * | 2014-11-27 | 2015-04-08 | 昆山瑞昱化工有限公司 | Metal polishing agent |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584687A (en) * | 2020-06-09 | 2020-08-25 | 山西潞安太阳能科技有限责任公司 | Novel method for realizing LDSE (laser direct ion exchanger) by alkali throwing |
| CN112111279A (en) * | 2020-08-13 | 2020-12-22 | 天津爱旭太阳能科技有限公司 | Additive for alkali polishing in solar cell preparation and polishing process |
| CN113668067A (en) * | 2021-08-19 | 2021-11-19 | 常州时创能源股份有限公司 | Additive for alkali polishing of monocrystalline silicon piece and application thereof |
| CN113668067B (en) * | 2021-08-19 | 2022-05-17 | 常州时创能源股份有限公司 | Additive for alkali polishing of monocrystalline silicon piece and application thereof |
| CN114316804A (en) * | 2021-12-15 | 2022-04-12 | 嘉兴市小辰光伏科技有限公司 | Additive for improving monocrystalline silicon alkali polishing appearance problem and polishing process thereof |
| CN114316634A (en) * | 2021-12-15 | 2022-04-12 | 焦作市和兴化学工业有限公司 | Preparation method of high-structure acetylene carbon black |
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