CN115821094A - Copper-based electrical contact material with high tellurium content and preparation method thereof - Google Patents
Copper-based electrical contact material with high tellurium content and preparation method thereof Download PDFInfo
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- CN115821094A CN115821094A CN202211534900.5A CN202211534900A CN115821094A CN 115821094 A CN115821094 A CN 115821094A CN 202211534900 A CN202211534900 A CN 202211534900A CN 115821094 A CN115821094 A CN 115821094A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 239000000463 material Substances 0.000 title claims abstract description 51
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 48
- 239000010949 copper Substances 0.000 title claims abstract description 48
- 229910052714 tellurium Inorganic materials 0.000 title claims abstract description 35
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000843 powder Substances 0.000 claims abstract description 56
- 229910001215 Te alloy Inorganic materials 0.000 claims abstract description 34
- QZCHKAUWIRYEGK-UHFFFAOYSA-N tellanylidenecopper Chemical compound [Te]=[Cu] QZCHKAUWIRYEGK-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000002994 raw material Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000005245 sintering Methods 0.000 claims abstract description 17
- 230000032683 aging Effects 0.000 claims abstract description 15
- 238000005098 hot rolling Methods 0.000 claims abstract description 8
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 8
- 238000009694 cold isostatic pressing Methods 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 46
- 229910052786 argon Inorganic materials 0.000 claims description 23
- 230000001681 protective effect Effects 0.000 claims description 22
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 14
- 239000011812 mixed powder Substances 0.000 claims description 12
- 238000005097 cold rolling Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 5
- 238000000498 ball milling Methods 0.000 claims description 4
- 238000009692 water atomization Methods 0.000 claims description 2
- 238000005253 cladding Methods 0.000 claims 2
- 238000003466 welding Methods 0.000 abstract description 8
- 239000011159 matrix material Substances 0.000 abstract description 7
- 230000004927 fusion Effects 0.000 abstract description 6
- 238000003723 Smelting Methods 0.000 abstract description 4
- 238000002679 ablation Methods 0.000 abstract description 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000010891 electric arc Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910000858 La alloy Inorganic materials 0.000 description 4
- FQVNUZAZHHOJOH-UHFFFAOYSA-N copper lanthanum Chemical compound [Cu].[La] FQVNUZAZHHOJOH-UHFFFAOYSA-N 0.000 description 4
- 238000004321 preservation Methods 0.000 description 4
- 229910000636 Ce alloy Inorganic materials 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- HYOCODYYAAKURW-UHFFFAOYSA-N [Cu].[Ce].[La] Chemical compound [Cu].[Ce].[La] HYOCODYYAAKURW-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- DLBLRWBEEGHFFH-UHFFFAOYSA-N copper samarium Chemical compound [Cu].[Sm] DLBLRWBEEGHFFH-UHFFFAOYSA-N 0.000 description 2
- -1 copper-dysprosium gold Chemical compound 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910000612 Sm alloy Inorganic materials 0.000 description 1
- QRIXREADUFYZJC-UHFFFAOYSA-N [La].[Au].[Cu] Chemical compound [La].[Au].[Cu] QRIXREADUFYZJC-UHFFFAOYSA-N 0.000 description 1
- 230000003141 anti-fusion Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- SKEYZPJKRDZMJG-UHFFFAOYSA-N cerium copper Chemical compound [Cu].[Ce] SKEYZPJKRDZMJG-UHFFFAOYSA-N 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
The invention discloses a copper-based electrical contact material with high tellurium content and a preparation method thereof, belonging to the technical field of electrical contact materials. The invention takes copper as a matrix, copper-clad alloy powder as a second phase and trace rare earth elements as a third phase, and the copper-clad alloy powder is prepared by performing cold isostatic pressing on raw materials to form a blank, and performing multiple sintering, hot rolling and aging treatment on the blank. The invention solves the problem of low tellurium content in the electric contact material of the copper-tellurium alloy manufactured by the existing smelting method, and the electric contact material manufactured by the method has the excellent characteristics of good electrical conductivity, thermal conductivity, fusion welding resistance, arc ablation resistance, oxidation resistance and the like, and can be widely applied to low-voltage electric contact materials, such as small circuit breaker contacts and molded case circuit breaker contacts.
Description
Technical Field
The invention belongs to the technical field of electrical contact materials, and relates to a copper-based electrical contact material with high tellurium content and a preparation method thereof.
Background
Among the existing electrical contact materials, one is a silver-based electrical contact material containing silver as a main component, and the other is a copper-based electrical contact material containing copper as a main component. Silver-based electrical contact materials based on silver have good electrical properties but are costly. The copper-based electrical contact material with copper as the main component has low cost, but the electrical property is not as good as that of a silver-based contact, especially the welding resistance. The silver used for the contact is increased year by year, and the requirement of reducing the cost of electrical appliance manufacturers is more and more strong, so that an electric contact material capable of replacing the silver-based contact is urgently needed.
Tellurium is a non-metallic element, but has very good heat transfer and electrical conductivity. The density is 6.0 g/cubic centimeter, the melting point is 449.5 ℃, the boiling point is 989.8 ℃, and the material not only has high conductivity and high arc extinction, but also has the characteristics of high strength, high plasticity and the like. As an anti-fusion welding component in the electric contact material, tellurium is gasified under the action of electric arc to cool the surface of the contact and reduce the energy of the electric arc, thereby achieving the purpose of arc quenching, and simultaneously having the function of blowing off oxides on the surface of the contact to keep lower resistance. Therefore, the tellurium as the contact material of the second phase has good fusion welding resistance, arc erosion resistance and low and stable contact resistance.
The tellurium content of the copper-tellurium alloys produced by the smelting process is generally only 0.4 to 0.8% by weight. When the content of tellurium is higher than this weight percentage, the processability is sharply deteriorated and the resistance is sharply increased, and a practical electric contact material cannot be prepared. The copper-tellurium material with the tellurium content ranging from 0.4% to 0.8% has unobvious fusion welding resistance, cannot play a role in improving the fusion welding resistance, and needs to improve the tellurium content.
Disclosure of Invention
The invention aims to provide a preparation method of a copper-based electrical contact material with high tellurium content, which solves the problem of low tellurium content in the electrical contact material of a copper-tellurium alloy manufactured by the existing smelting method.
The technical scheme adopted by the invention is as follows: a preparation method of a copper-based electrical contact material with high tellurium content comprises the following steps:
(1) Uniformly mixing the raw materials in proportion, wherein the sum of the weight parts of the raw materials is 100 parts, and the weight parts of the raw materials are as follows: copper-clad copper-tellurium alloy powder, copper alloy powder, electrolytic copper powder =10-20:10-20:60-80 percent, wherein the weight percentage of tellurium contained in the copper-tellurium alloy powder is 48-52 percent;
(2) Carrying out cold isostatic pressing on the obtained mixed powder under 250-300 MPa to form a blank;
(3) Sintering the blank at 800-1000 ℃ under the protection of argon;
(4) Re-pressing the sintered blank under the pressure of 500-600 tons;
(5) Re-burning the re-pressed blank at 800-960 ℃ in the argon protective atmosphere;
(6) Hot rolling the re-sintered blank at 700-950 ℃ in a reducing protective atmosphere;
(7) The plate is subjected to aging treatment under the argon protective atmosphere, the treatment temperature is 500-870 ℃, and the treatment time is 1-3 hours;
(8) And (4) cold rolling the plate subjected to aging treatment and then processing the plate to obtain a finished product.
Further, the average grain size of the copper-tellurium alloy powder is 1-3 mu m.
Further, the thickness of the copper clad layer of the copper-clad copper-tellurium alloy powder is 0.05-0.2 μm.
Furthermore, the copper clad layer of the copper-clad copper-tellurium alloy powder is prepared by adopting a chemical copper plating method.
Furthermore, the copper alloy powder contains one or more of rare earth elements with the weight percentage of 0.8-2.0 percent.
Furthermore, the average grain size of the copper alloy powder is-200 meshes.
Furthermore, the copper alloy powder is prepared by a water atomization method.
Furthermore, the average particle size of the electrolytic copper powder is-200 meshes.
Further, the preparation method comprises the following specific steps:
(1) The sum of the weight parts of the raw materials is 100 parts, and the weight parts are as follows: copper-clad copper-tellurium alloy powder, copper alloy powder, electrolytic copper powder =10-20:10-20:60-80 percent, wherein the weight percentage of tellurium contained in the copper-tellurium alloy powder is 48-52 percent; mixing the raw materials in proportion, and ball-milling for 6-12 h on a high-energy ball mill under a protective atmosphere to obtain uniform mixed powder;
(2) Carrying out cold isostatic pressing on the obtained mixed powder under 250-300 MPa to form a blank;
(3) Sintering the blank at 800-1000 ℃ in the argon protective atmosphere for 1-4 hours;
(4) Re-pressing the sintered blank under the pressure of 500-600 tons;
(5) Re-burning the re-pressed blank at 800-960 ℃ under the protection of argon, and keeping the sintering temperature for 1-2 hours;
(6) Hot rolling the re-sintered blank at 700-950 ℃ in a reducing protective atmosphere;
(7) The plate is subjected to aging treatment under the argon protective atmosphere, the treatment temperature is 500-870 ℃, and the treatment time is 1-3 hours;
(8) And (3) cold-rolling the plate subjected to aging treatment to a specified thickness of the product, and then performing blanking according to the size of the product to obtain a finished product.
It is another object of the present invention to provide a high tellurium content copper-based electrical contact material prepared by the above-described preparation method.
The invention has the advantages and beneficial effects that: the invention solves the problem of low tellurium content in the electric contact material of the copper-tellurium alloy manufactured by the existing smelting method, and the electric contact material manufactured by the method has the excellent characteristics of good electrical conductivity, thermal conductivity, fusion welding resistance, arc ablation resistance, oxidation resistance and the like, and can be widely applied to low-voltage electric contact materials, such as small circuit breaker contacts and molded case circuit breaker contacts. The copper-clad tellurium alloy powder and the matrix material have good compatibility, so that the bonding strength of the copper-clad tellurium alloy powder and a copper matrix is very high. After powder metallurgy processing, the copper-clad copper-tellurium alloy powder becomes a second phase which is dispersed and distributed in a copper matrix. The rare earth element in the copper alloy powder containing the rare earth element becomes the third phase after the powder metallurgy processing. In the material with copper as a matrix, copper-clad alloy powder as a second phase and trace rare earth elements as a third phase, the material has good conductivity and processability because copper is a continuous phase. When the contact works to generate electric arc, a large amount of tellurium in the copper-clad tellurium alloy powder can be quickly gasified and absorb heat generated by the electric arc under the action of high-temperature electric arc to extinguish the electric arc, and the ablation of the electric arc to the contact is reduced, so that the fusion welding resistance of the contact is improved, and the electric life of the contact is prolonged. Meanwhile, the gasification of tellurium can also blow off oxides on the surface of the contact, so that the contact keeps low and stable resistance.
Detailed Description
The present invention will be further described with reference to the following examples.
Example 1
A preparation method of a copper-based electrical contact material with high tellurium content comprises the following steps:
(1) The sum of the weight parts of the raw materials is 100 parts, and the weight parts are as follows: copper-clad copper-tellurium alloy powder, copper-lanthanum-gold powder, electrolytic copper powder =10:10:80, the weight percentage of tellurium contained in the copper-tellurium alloy powder is 48-52%, and the preparation method of the copper-coated copper-tellurium alloy powder comprises the following steps: crushing and screening the copper-tellurium alloy to obtain fine particles with the average particle size of 1-3 mu m, and then carrying out electroless copper plating to obtain a copper plating layer with the thickness of 0.05-0.2 mu m; the weight percentage of lanthanum contained in the copper-lanthanum alloy powder is 2 percent; in the material which takes copper as a matrix, copper-coated copper alloy powder as a second phase and trace rare earth elements as a third phase, the material has good conductivity and machinability because copper is a continuous phase; mixing the raw materials in proportion, and ball-milling for 6-12 h in a high-energy ball mill under a protective atmosphere to obtain uniform mixed powder;
(2) Carrying out cold isostatic pressing on the obtained mixed powder under 250-300 MPa to form a blank;
(3) Sintering the blank at 800-1000 ℃ in the argon protective atmosphere for 1-4 hours;
(4) Re-pressing the sintered blank under the pressure of 500-600 tons;
(5) Re-burning the re-pressed blank at 800-960 ℃ under the protection of argon, and keeping the sintering temperature for 1-2 hours;
(6) Hot rolling the re-sintered blank at 700-950 ℃ in a reducing protective atmosphere;
(7) The plate is subjected to aging treatment under the argon protective atmosphere, the treatment temperature is 500-870 ℃, and the treatment time is 1-3 hours;
(8) And (3) cold-rolling the plate subjected to aging treatment to a specified thickness of the product, and then performing blanking according to the size of the product to obtain a finished product.
The material properties obtained in this example: the density is 8.67g/cm < 3 >, the resistivity is 2.15 mu omega cm, and the rated operation short circuit breaking capacity of the miniature circuit breaker is 6kA.
Example 2
The preparation method of this example is the same as that of example 1, except that the formulation is as follows: the sum of the weight parts of the raw materials is 100 parts, and the weight parts are as follows: copper-clad copper-tellurium alloy powder, copper-dysprosium gold powder, electrolytic copper powder =20:20:60, the weight percentage of dysprosium in the copper lanthanum alloy powder is 1%.
The material properties obtained in this example: the density is 8.62g/cm < 3 >, the resistivity is 2.21 mu omega cm, and the rated operation short circuit breaking capacity of the miniature circuit breaker is 10kA.
Example 3
The preparation method of this example is the same as that of example 1, except that the formulation is as follows: the sum of the weight parts of the raw materials is 100 parts, and the weight parts are as follows: copper-clad copper-tellurium alloy powder, copper-lanthanum-cerium alloy powder, electrolytic copper powder =18:15:70, the weight percentage of lanthanum in the copper-lanthanum-cerium alloy powder is 0.5 percent, and the weight percentage of cerium is 0.8 percent.
The material properties obtained in this example: the density is 8.59g/cm3, the resistivity is 2.20 mu omega cm, and the rated operation short circuit breaking capacity of the miniature circuit breaker is 10kA.
Example 4
The preparation method of this example is the same as that of example 1, except that the formulation is as follows: the total weight of the raw materials is 100 parts, and the weight parts are as follows: copper-clad copper-tellurium alloy powder, copper-samarium alloy powder and electrolytic copper powder =18:12:70, the weight percentage of samarium contained in the samarium-copper alloy powder is 1.5%.
The material properties obtained in this example: the density is 8.58g/cm < 3 >, the resistivity is 2.21 mu omega cm, and the rated operation short circuit breaking capacity of the miniature circuit breaker is 10kA.
Example 5
A preparation method of a copper-based electrical contact material with high tellurium content comprises the following steps:
(1) 10kg of copper-coated copper-tellurium alloy powder, 20kg of copper-lanthanum alloy powder and 70kg of electrolytic copper powder, and ball-milling the raw materials for 6 hours on a high-energy ball mill under the protection of argon gas to obtain uniform mixed powder.
(2) The mixed powder obtained was cold isostatic pressed at 250MPa into a billet of 200X 50X 20 mm.
(3) And sintering the blank at 800 ℃ under the argon protection atmosphere, wherein the sintering heat preservation time is 4 hours.
(4) The sintered blank was recompressed at a pressure of 500 tons.
(5) And re-sintering the re-pressed blank at 800 ℃ under the argon protective atmosphere, wherein the sintering heat preservation time is 2 hours.
(6) And hot rolling the re-sintered blank at 700 ℃ under the protection of ammonia decomposition gas.
(7) The plate is subjected to aging treatment under the argon protective atmosphere, the treatment temperature is 500 ℃, and the treatment time is 3 hours;
(8) And (3) cold-rolling the section subjected to aging treatment to a specified thickness of the product, and blanking europium according to the size of the product.
The material properties obtained in this example: the density is 8.60g/cm < 3 >, the resistivity is 2.18 mu omega cm, and the rated operation short circuit breaking capacity of the miniature circuit breaker is 6kA.
Example 6
(1) The raw material formula is as follows: 15Kg of copper-coated copper-tellurium alloy powder, 15Kg of copper-cerium-gold powder and 70Kg of electrolytic copper powder, wherein the weight percentage of dysprosium in the copper-cerium alloy powder is 1.5%, the weight percentage of tellurium in the copper-tellurium alloy powder is 48-52%, and the preparation method of the copper-coated copper-tellurium alloy powder comprises the following steps: crushing and screening the copper-tellurium alloy to obtain fine particles with the average particle size of 1-3 mu m, and then carrying out electroless copper plating to obtain a copper plating layer with the thickness of 0.05-0.2 mu m; the weight percentage of lanthanum contained in the copper-lanthanum alloy powder is 2 percent; in the material which takes copper as a matrix, copper-coated copper alloy powder as a second phase and trace rare earth elements as a third phase, the material has good conductivity and machinability because copper is a continuous phase; the raw materials are ball-milled for 12 hours on a high-energy ball mill under the protection atmosphere of argon to obtain uniform mixed powder.
(2) The mixed powder obtained was cold isostatic pressed at 300MPa into 200X 50X 20mm billets.
(3) And sintering the blank at 1000 ℃ under the argon protection atmosphere, wherein the sintering heat preservation time is 1 hour.
(4) The sintered blank was recompressed at a pressure of 600 tons.
(5) And re-sintering the re-pressed blank at 960 ℃ in an argon protective atmosphere, wherein the sintering heat preservation time is 1 hour.
(6) And hot rolling the re-sintered blank into a plate at 750 ℃ under the protection of ammonia decomposition gas.
(7) The plate is subjected to aging treatment under the argon protective atmosphere, the treatment temperature is 870 ℃, and the treatment time is 1 hour;
(8) And (4) rolling or drawing the aging-treated section, and then blanking according to the size of the product.
The material properties obtained in this example: the density is 8.62g/cm < 3 >, the resistivity is 2.24 mu omega cm, and the rated operation short circuit breaking capacity of the miniature circuit breaker is 10kA.
Claims (10)
1. A preparation method of a copper-based electrical contact material with high tellurium content is characterized by comprising the following steps:
(1) Uniformly mixing the raw materials in proportion, wherein the sum of the weight parts of the raw materials is 100 parts, and the weight parts of the raw materials are as follows: copper-clad copper-tellurium alloy powder, copper alloy powder, electrolytic copper powder =10-20:10-20:60-80 percent, wherein the weight percentage of tellurium contained in the copper-tellurium alloy powder is 48-52 percent;
(2) Carrying out cold isostatic pressing on the obtained mixed powder under 250-300 MPa to form a blank;
(3) Sintering the blank at 800-1000 ℃ under the protection of argon;
(4) Re-pressing the sintered blank under the pressure of 500-600 tons;
(5) Re-burning the re-pressed blank at 800-960 ℃ in the argon protective atmosphere;
(6) Hot rolling the re-sintered blank at 700-950 ℃ in a reducing protective atmosphere;
(7) The plate is subjected to aging treatment under the argon protective atmosphere, the treatment temperature is 500-870 ℃, and the treatment time is 1-3 hours;
(8) And (4) cold rolling the plate subjected to aging treatment and then processing the plate to obtain a finished product.
2. The method for preparing a high-tellurium-content copper-based electrical contact material as claimed in claim 1, wherein the average particle size of the copper-tellurium alloy powder is 1-3 μm.
3. The method for preparing a copper-based electrical contact material with a high tellurium content as claimed in claim 2, wherein the copper cladding layer thickness of the copper-clad copper-tellurium alloy powder is 0.05-0.2 μm.
4. The method for preparing a copper-based electrical contact material with a high tellurium content as claimed in claim 3, wherein the copper cladding layer of the copper-clad copper-tellurium alloy powder is prepared by electroless copper plating.
5. The method for preparing the copper-based electrical contact material with high tellurium content according to claim 1, wherein the copper alloy powder contains one or more of rare earth elements in an amount of 0.8 to 2.0% by weight.
6. The method for preparing a high-tellurium-content copper-based electrical contact material as claimed in claim 5, wherein the average particle size of the copper alloy powder is-200 mesh.
7. The method for preparing a copper-based electrical contact material with a high tellurium content as claimed in claim 6, wherein the copper alloy powder is prepared by a water atomization method.
8. The method for preparing a high tellurium content copper-based electrical contact material as claimed in claim 1, wherein the average particle size of the electrolytic copper powder is-200 mesh.
9. A method for preparing a high tellurium content copper-based electrical contact material as claimed in any of claims 1 to 8, comprising the steps of:
(1) The sum of the weight parts of the raw materials is 100 parts, and the weight parts are as follows: copper-clad copper-tellurium alloy powder, copper alloy powder, electrolytic copper powder =10-20:10-20:60-80, wherein the weight percentage of tellurium contained in the copper-tellurium alloy powder is 48-52%; mixing the raw materials in proportion, and ball-milling for 6-12 h on a high-energy ball mill under a protective atmosphere to obtain uniform mixed powder;
(2) Carrying out cold isostatic pressing on the obtained mixed powder under 250-300 MPa to form a blank;
(3) Sintering the blank at 800-1000 ℃ in the argon protective atmosphere for 1-4 hours;
(4) Re-pressing the sintered blank under the pressure of 500-600 tons;
(5) Re-burning the re-pressed blank at 800-960 ℃ under the protection of argon, and keeping the sintering temperature for 1-2 hours;
(6) Hot rolling the re-sintered blank at 700-950 ℃ in a reducing protective atmosphere;
(7) The plate is subjected to aging treatment under the argon protective atmosphere, the treatment temperature is 500-870 ℃, and the treatment time is 1-3 hours;
(8) And (3) cold-rolling the plate subjected to aging treatment to a specified thickness of the product, and then performing blanking according to the size of the product to obtain a finished product.
10. A high tellurium content copper-based electrical contact material produced by the method of claim 9.
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| CN102102157A (en) * | 2009-12-18 | 2011-06-22 | 谷文伟 | Multicomponent composite copper alloy electrical contact material |
| CN101885060A (en) * | 2010-06-22 | 2010-11-17 | 上海中希合金有限公司 | High-performance copper-diamond electrical contact material and preparation process thereof |
| US20130001783A1 (en) * | 2011-07-01 | 2013-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect Barrier Structure and Method |
| CN102426867A (en) * | 2011-08-25 | 2012-04-25 | 哈尔滨东大高新材料股份有限公司 | Whisker reinforced copper-based electrical contact material and preparation method thereof |
| CN109786027A (en) * | 2017-11-14 | 2019-05-21 | 李文熙 | The preparation method of high conductivity base metal thick film conductive paste |
| CN111715884A (en) * | 2020-05-22 | 2020-09-29 | 陕西斯瑞新材料股份有限公司 | Preparation method of low-gas-content copper-tellurium alloy spherical powder |
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