CN101885060A - High-performance copper-diamond electrical contact material and preparation process thereof - Google Patents
High-performance copper-diamond electrical contact material and preparation process thereof Download PDFInfo
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Abstract
The invention relates to a preparation process of powder metallurgy material, in particular to high-performance copper-diamond electrical contact material and a preparation process thereof. The high-performance copper-diamond electrical contact material comprises the following raw materials by weight percentage: 0.001%-5.0% of diamond powder and 95%-99.999% of copper alloy powder, wherein the grain size of the diamond powder is 0.1-15 mum, and the surface of the diamond powder is coated with copper. The preparation process of the high-performance copper-diamond electrical contact material comprises the following steps: (1) preparing the raw materials: preparing the copper alloy powder by using a high-pressure spray method, preparing the copper-coated diamond powder by using a liquid-phase reduction method and mixing the copper alloy powder and the copper-coated diamond powder; (2) preparing the electrical contact material: firstly, carrying out thermal diffusion treatment to the mixture of the copper alloy powder and the copper-coated diamond powder, sintering the compressed and moulded mixture in vacuum, and thermally extruding and moulding the mixture; and (3) preparing electrical contact sectional material: rolling or drawing and machining the copper-diamond electric contact into the required-size sectional material.
Description
Technical field
The present invention relates to powdered metallurgical material and manufacturing process thereof, relate in particular to high-performance copper-copper-diamond electrical contact material and manufacturing process thereof.
Background technology
Electrical contact is the contact element of electric switch, instrument etc.; Mainly bear the effect of connection, disconnecting circuit and load current; The quality of its performance directly influences electric switch and instrument reliability of operation and service life.At present, electrical contact material is based on money base; But Ag-based electrical contact involves great expense, the production cost height.For this reason, people select conduction and heat conductivility strong, and cheap copper replaces silver, as the material of electrical contact.
Chinese patent (CN1787137A) discloses a kind of copper-diamond electrical contact material of trace additives silver.This patent is to add trace meter silver, bortz powder and other a kind of elements (zirconium, chromium, aluminium, niobium and rare earth) in the copper matrix; Thereby the resistance fusion welding of copper-based electrical contact material, anti-electrical arc erosion ability and electric life have been strengthened.This electrical contact material is to adopt traditional powder metallurgic method preparation, promptly earlier with the powder mixing machine method copper powder, silver powder and bortz powder is carried out batch mixing, then successively by isotactic pressing, vacuum-sintering, extrusion modling, rolling or drawing, and last machining moulding.
But there is following problem in this technical scheme: at first, the component segregation phenomenon takes place easily, promptly in the copper alloy behind sintering, elements such as the rare earth that is added, chromium, zirconium or niobium also may exist with the simple substance state.This is because elements such as rare earth, chromium, zirconium or niobium are difficult to and the complete alloying of copper on the one hand; On the other hand, what this patent adopted is mechanical mixture technology, its mixed metal powder granulates, skewness in copper alloy.The component segregation phenomenon can cause the hardness of copper alloy matrix to reduce, and the ability of solidified diamond weakens; And then influence the resistance fusion welding and the anti-electrical arc erosion power of electric contact.In addition, the resistivity of electrical contact also can be affected, so the comprehensive electrochemical properties of the electrical contact material of this technical scheme is not high.
Secondly, this technology directly joins undressed diamond dust in the copper alloy powder.Affixed ability between these two kinds of materials of different nature; The long-term wearability and the resistance fusion welding of back electrical contact material of using can reduce greatly.
Summary of the invention
One of purpose of the present invention is: a kind of high-performance copper-copper-diamond electrical contact material is provided, and the structural constituent of its copper alloy matrix is even, produces metallurgical binding closely with diamond; This electrical contact material hardness height, resistivity are little, resistance fusion welding can be strong.
Two of purpose of the present invention is: the manufacturing process that one of a kind of production purpose electrical contact material is provided.
Purpose one of the present invention is achieved in that at first the present invention has coated layer of copper on the diamond dust surface, forms solid solution by copper and copper alloy, makes diamond and copper alloy matrix reach strong bonded.Secondly, the present invention has added two kinds of mixed active elements in copper alloy powder, and the alloy that it mutually combines and produces can improve diamond and copper alloy matrix wettability of the surface; And the mixed active element can react with the carbon of diamond surface, forms clearance-type carbide intermediate layer, and this clearance-type carbide is to be combined by covalent bond, ionic bond, metallic bond, can impel between diamond and the copper alloy to produce metallurgical binding.Simultaneously, this clearance-type carbide has special nature, can increase the electric conductivity of copper-diamond electrical contact material.
High-performance copper-copper-diamond electrical contact material comprises following weight percentages:
Diamond dust 0.001～5.0%, copper alloy powder are 95～99.999%, and the particle diameter of wherein said diamond dust is 0.1～15 μ m, and its surface is coated with copper.
The raw material of described copper alloy powder by weight percentage, comprises silver 0.001～2.0%, active element 0.002～4.0%, copper surplus.
Described active element is any one in NiTi composition, nickel zirconium composition, chromium niobium composition or the chromium titanium composition; In the described NiTi composition, nickel accounts for 0.001～2.0% of copper alloy total raw material percentage by weight, and titanium accounts for 0.001～2.0% of copper alloy total raw material percentage by weight; In the described nickel zirconium composition, nickel accounts for 0.001～2.0% of copper alloy total raw material percentage by weight, and zirconium accounts for 0.001～2.0% of copper alloy total raw material percentage by weight; In the described chromium niobium composition, chromium accounts for 0.001～2.0% of copper alloy total raw material percentage by weight, and niobium accounts for 0.001～2.0% of copper alloy total raw material percentage by weight; In the described chromium titanium composition, chromium accounts for 0.001～2.0% of copper alloy total raw material percentage by weight, and titanium accounts for 0.001～2.0% of copper alloy total raw material percentage by weight;
Described active element is the composition of rare earth element and silicon or zirconium, and wherein in the composition of rare earth element and silicon, rare earth element accounts for 0.001～2.0% of copper alloy total raw material percentage by weight, and silicon accounts for 0.001～2.0% of copper alloy total raw material percentage by weight; In the composition of rare earth element and zirconium, rare earth element accounts for 0.001～2.0% of copper alloy total raw material percentage by weight, and zirconium accounts for 0.001～2.0% of copper alloy total raw material percentage by weight.
Described rare earth element is any one in lanthanum, cerium or the yttrium.
In the copper alloy powder powder stock of the present invention, first kind of preferred version of active element is: NiTi composition or nickel zirconium composition.Nickel has favorable conductive and heat conductivility, and oxidation resistance is strong, and the extension performance is good.With NiTi composition or nickel zirconium composition, add in the copper alloy powder, can form Nitinol or nickel-zirconium alloys on the one hand, improve the wetability between copper alloy and the diamond; On the other hand, the reaction of the carbon of titanium or zirconium and diamond surface generates interstitial compound TiC or ZrC, makes to produce metallurgical binding between diamond and the copper alloy, and strengthens the electric conductivity of copper-diamond electrical contact material.Therefore, be added with in the electrical contact material of NiTi composition or nickel zirconium composition copper alloy and adamantine conjugation is very high, antiwear property is excellent, be easy to machine-shaping, and electric conductivity height.
In the copper alloy powder powder stock of the present invention, second kind of preferred version of active element is: chromium niobium composition or chromium titanium composition.The chromium niobium alloy that chromium and niobium form belongs to " the strong alloy of heat ", has very high heat resistanceheat resistant, resistance to compression, wear-resisting and corrosion resisting property; Between titanium and the chromium, also can form high-intensity chromium titanium alloy; And chromium niobium alloy and chromium titanium alloy all can improve the wetability between copper alloy and the diamond; And resistance fusion welding energy, corrosion resistance and the hardness of raising electrical contact material.Meanwhile, the carbon reaction of niobium, titanium or chromium and diamond surface can generate gap carbide NbC, TiC or CrC, produces metallurgical binding between energy and the diamond, further strengthen the adhesion between copper alloy and the diamond, and strengthen the electric conductivity of electrical contact material.
In the copper alloy powder powder stock of the present invention, the third preferred version of active element is: the composition of rare earth element and silicon, the perhaps composition of rare earth and zirconium.Silicon or zirconium can react with the carbon of diamond surface, generate SiC or ZrC intermediate layer, make diamond and copper alloy produce metallurgical binding, strengthen the associativity of diamond and copper alloy.Simultaneously, SiC is a kind of semiconducting compound, can promote the thermal conductivity of electrical contact material.In addition, silicon or zirconium itself have superpower hardness, can further promote intensity, hardness and the wearability of electrical contact.Rare earth element can form high melting compound with impurity in the copper alloy, stops growing up of crystal grain in the copper alloy melt, thus the crystal grain of refinement copper alloy; Another effect dispersion strengthening copper alloy of rare earth element.
Purpose two of the present invention is achieved in that the present invention in order to make the copper alloy matrix even tissue, adopts the high-pressure water mist method, and with the molten alloyed copper of fusing, being atomized into average grain diameter is that-200 orders are to-300 purpose fine powders.The present invention has researched and developed the technology that liquid phase reduction is produced the copper clad diamond dust, comprises diamond dust surface graphitization, diamond dust acid treatment, reduction coats and preparation technologies such as vacuum drying.The diamond dust and the copper alloy powder that coat copper can form solid solution, and are uniformly dispersed.Thermal diffusion process of the present invention can prevent that diamond from being graphite by whole oxidation transformations, can also make to produce the surface metallurgic combination between each powder, makes chemical constituent even; And can improve the suppression performance of powder.Among the preparation technology of the present invention, adopt nitrogen protection or vacuum environment more, oxidized to avoid rare earth.
The manufacturing process of high-performance copper-copper-diamond electrical contact material, carry out according to following steps:
1) preparation raw material: be equipped with copper alloy powder with the high-pressure water mist legal system, produce the copper clad diamond dust with liquid phase reduction; Then, copper alloy powder and copper clad diamond dust are mixed;
2) preparation electrical contact material: earlier copper alloy and copper clad diamond mixed-powder are carried out heat diffusion treatment; After the compression moulding, carry out vacuum-sintering again, adopt hot extrusion at last, copper-diamond electrical contact material billet is squeezed into section bar;
3) preparation electrical contact section bar:, copper-diamond electrical contact hot extruded shapes is processed into the required size section bar through rolling or drawing and machining.
Described hydraulic atomized legal system is equipped with copper alloy powder, is under the nitrogen protection condition, the copper alloy raw material is placed in the intermediate frequency furnace melt, and temperature is controlled at 1100～1200 ℃; Molten alloyed copper after the fusing through the high-pressure water mist nozzle, is atomized into copper alloy powder; Atomizing pressure is 50～100MPa, condensation rate 10
3～10
4K/s.
Described liquid phase reduction is produced the copper clad diamond dust, carries out according to following steps,
(1) powder-processed: with sintering furnace graphitization processing is carried out on the diamond dust surface earlier, with diluted hydrofluoric acid diamond dust is carried out acid treatment then;
(2) coat copper: adopt reducing process copper on diamond surface coats;
(3) finished product is handled: the diamond dust of copper clad is filtered, washs, and vacuum drying sieves.
Described diamond dust surface graphitization processing is under the nitrogen protection condition, bortz powder is put in 900～1000 ℃ the tube furnace and heat-treats insulation 30～60min;
Described diamond dust acid treatment is with heat treated diamond dust, puts into the dilute hydrofluoric acid solution of 2～6N, stirs 10～20 minutes; With the clear water flushing,, and filter again to neutral.
Described reducing process coats copper, is the ammonia solvent copper sulphate with 30%, makes it to form cupric ammine complex solution, and the concentration of copper ion is 60～80g/L in this solution; Use ammoniacal liquor again, the pH value of cupric ammine complex solution is adjusted to 8.5～11, and makes solution temperature remain on 20 ℃～40 ℃.Then, the bortz powder of acid treatment is put into cupric ammine complex solution, constantly stir, and to drip concentration be 40% hydrazine hydrate, reduce coating.
Described heat diffusion treatment is put into tube furnace with the powder that mixes, and under the condition of nitrogen protection, carries out heat diffusion treatment, makes and produces metallurgical binding formation solid solution between copper clad diamond dust and the copper alloy; The thermal diffusion temperature is 400～800 ℃, and temperature retention time is 2～6 hours.
Described compression moulding, the pressing pressure of isostatic pressing machine is at 50～300MPa, 3～5 seconds dwell times; Described vacuum-sintering is that copper-diamond electrical contact billet is put into sintering furnace, and its vacuum is less than 5 * 10
-3Pa, 750～950 ℃ of sintering temperatures, temperature retention time 1～2 hour; Described hot extrusion, the pressure of extruder are 15～25MPa, and the hot extrusion ratio is 10～25,600～850 ℃ of extrusion temperatures.
The invention has the beneficial effects as follows:
1, the present invention adopts the prepared copper clad diamond dust of liquid phase reduction, has good dispersive property, and it is evenly distributed in copper alloy matrix; And strengthened the associativity of diamond dust and copper alloy powder greatly, guaranteed the abrasion resistance of electrical contact, prolonged the service life of electrical contact;
2, the present invention has added active element in copper alloy powder, has improved the wetability between diamond and the copper alloy, and makes between diamond and the copper alloy powder and produce metallurgical binding, has improved resistance fusion welding energy, abrasion resistance and the electric property of electrical contact;
3, the present invention adopts the high-pressure water mist method, and copper alloy powder further is atomized into ultra-fine alloyed powder.The alloy powder of gained, chemical constituent is even, has avoided the alloying component segregation, and has further strengthened the bond strength of diamond and copper alloy;
4, the present invention adopts thermal diffusion process; On the one hand, can prevent that the diamond oxidation transformation from being graphite; On the other hand, can make between copper clad diamond dust and the copper alloy powder, produce the surface metallurgic combination, strengthen alloying; And promote the alloy structure homogenising, improved alloy powder particle and formed and suppression performance.
Description of drawings
Accompanying drawing manufacturing process flow diagram of the present invention
Specific embodiment
Embodiment one
The compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, for bortz powder (it is heavy to remove coating copper) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder is, silver 0.01 (mas) %, nickel 0.02 (mas) %, zirconium 0.02 (mas) %, copper 99.95 (mas) %.
The manufacturing process of electrical contact material as shown in Figure 1:
1) hydraulic atomized legal system is got copper alloy powder: by above-mentioned copper alloy powder powder formulation, take by weighing silver, nickel, zirconium and copper raw metal, place fusing in the intermediate frequency furnace; Fusion process adopts nitrogen protection, and temperature is controlled at 1100～1200 ℃.Then, the molten alloyed copper high-pressure water mist nozzle of flowing through is atomized into even-grained powder, and powder diameter is-200 orders; Atomizing pressure is 60MPa, condensation rate 104k/s.Because the copper alloy powder particle diameter that hydraulic atomized method is produced is tiny, and is evenly distributed, and can prevent the generation of component segregation phenomenon.
2) on diamond dust, coat copper; At first, take by weighing diamond dust by above-mentioned prescription; Be placed in the tube furnace and heat-treat.Feed nitrogen in the stove, temperature is 950 ℃, and insulation 50min makes the particle surface of diamond dust be transformed into graphite, forms the carbon shell of the very thin sealing of one deck.This step is in the heat diffusion treatment, and the generation of clearance-type carbide provides condition.
Then, diamond dust is carried out acid treatment.With heat treated diamond dust, put into the dilute hydrofluoric acid solution of 4N, stirred 15 minutes; Wash diamond dust with clear water, be neutral until pH value, and filter.
Then, coat copper with reducing process at diamond surface.Earlier with 30% ammonia solvent copper sulphate, make it to form cupric ammine complex solution, the concentration of copper ion is 75g/L in the solution; Use ammoniacal liquor again, the pH value of cupric ammine complex solution is adjusted to 9.5, need the temperature of solution is remained on 30 ℃ always; Then, will put into cupric ammine complex solution, and constantly stir, and to drip concentration be 40% hydrazine hydrate, reduce coating through the bortz powder of acid treatment; At last, the filtration of copper clad diamond dust, washing and vacuum drying are sieved.
3) batch mixing: with copper alloy powder and cladding diamond powder, after mixing by hand, place mixed powder machine evenly to mix, mixing the powder time is 2 hours.
4) heat diffusion treatment: with the powder that mixes, put into tube furnace, feed nitrogen, carry out heat diffusion treatment, make and produce metallurgical binding formation solid solution between diamond and the copper alloy powder; The thermal diffusion temperature is 600 ℃, and temperature retention time is 4 hours.
5) compression moulding: use isostatic pressing machine, the copper-diamond powder with forming after the thermal diffusion is pressed into billet, and pressure is 150MPa.
6) vacuum-sintering: the copper-diamond billet is put into sintering furnace, and its vacuum is less than 5 * 10-3Pa, 800 ℃ of sintering temperatures, temperature retention time 2 hours;
7) hot extrusion is become a useful person: be to increase the density of copper-diamond alloy, with the copper-diamond alloy billet hot extrusion molding material of extruder after with vacuum-sintering, squeeze pressure is 20MPa, and the hot extrusion ratio is 20, and extrusion temperature is 800 ℃.
8) rolling or drawing: the copper-diamond alloy profile is rolled or is drawn into required profile size with milling train or wire drawing machine.
9) machining:, the copper-diamond section bar is carried out machining by the size of required electrical contact.
Embodiment 2
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder is, silver 0.1 (mas) %, nickel 0.1 (mas) %, zirconium 0.1 (mas) %, copper 99.7%.
Embodiment 3
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder is, silver 1.0 (mas) %, nickel 1.0 (mas) %, zirconium 1.0 (mas) %, copper 97%.
Embodiment 4
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder is, silver 0.01 (mas) %, nickel 0.02 (mas) %, titanium 0.02 (mas) %, copper 99.95%.
Embodiment 5
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder is, silver 0.1 (mas) %, nickel 0.1 (mas) %, titanium 0.1 (mas) %, copper 99.7%.
Embodiment 6
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder is, silver 1.0 (mas) %, nickel 1.0 (mas) %, titanium 1.0 (mas) %, copper 97%.
Embodiment 7
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder is, silver 0.01 (mas) %, chromium 0.01 (mas) %, niobium 0.01 (mas) %, copper 99.97%.
Embodiment 8
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder is, silver 0.1 (mas) %, chromium 0.1 (mas) %, niobium 0.1 (mas) %, copper 99.7%.
Embodiment 9
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder is, silver 1.0 (mas) %, chromium 1.0 (mas) %, niobium 1.0 (mas) %, copper 97%.
Embodiment 10
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder is, silver 0.01 (mas) %, chromium 0.01 (mas) %, titanium 0.01 (mas) %, copper 99.97%.
Embodiment 11
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder is, silver 0.1 (mas) %, chromium 0.1 (mas) %, titanium 0.1 (mas) %, copper 99.7%.
Embodiment 12
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder is, silver 1.0 (mas) %, chromium 1.0 (mas) %, titanium 1.0 (mas) %, copper 97%.
Embodiment 13
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder is, silver 0.01 (mas) %, cerium 0.01 (mas) %, silicon 0.01 (mas) %, copper 99.97%.
Embodiment 14
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder is, silver 0.1 (mas) %, cerium 0.1 (mas) %, silicon 0.1 (mas) %, copper 99.7%.
Embodiment 15
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder is, silver 1.0 (mas) %, cerium 1.0 (mas) %, silicon 1.0 (mas) %, copper 97%.
Embodiment 16
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder is, silver 0.01 (mas) %, yttrium 0.01 (mas) %, silicon 0.01 (mas) %, copper 99.97%.
Embodiment 17
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.Wherein the prescription of copper alloy powder is, silver 0.1 (mas) %, yttrium 0.1 (mas) %, silicon 0.1 (mas) %, copper 99.7%.
Embodiment 18
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder is, silver 1.0 (mas) %, yttrium 1.0 (mas) %, silicon 1.0 (mas) %, copper 97%.
Embodiment 19
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder is, silver 0.01 (mas) %, lanthanum 0.01 (mas) %, silicon 0.01 (mas) %, copper 99.97%.
Embodiment 20
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder is, silver 0.1 (mas) %, lanthanum 0.1 (mas) %, silicon 0.1 (mas) %, copper 99.7%.
Embodiment 21
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder is, silver 1.0 (mas) %, lanthanum 1.0 (mas) %, silicon 1.0 (mas) %, copper 97%.
Embodiment 22
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder is, silver 0.01 (mas) %, cerium 0.01 (mas) %, zirconium 0.01 (mas) %, copper 99.97%.
Embodiment 23
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder is, silver 0.1 (mas) %, cerium 0.1 (mas) %, zirconium 0.1 (mas) %, copper 99.7%.
Embodiment 24
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder is, silver 1.0 (mas) %, cerium 1.0 (mas) %, zirconium 1.0 (mas) %, copper 97%.
Embodiment 25
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder is, silver 0.01 (mas) %, yttrium 0.01 (mas) %, zirconium 0.01 (mas) %, copper 99.97%.
Embodiment 26
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder is, silver 0.1 (mas) %, yttrium 0.1 (mas) %, zirconium 0.1 (mas) %, copper 99.7%.
Embodiment 27
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder is, silver 1.0 (mas) %, yttrium 1.0 (mas) %, zirconium 1.0 (mas) %, copper 97%.
Embodiment 28
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder is, silver 0.01 (mas) %, lanthanum 0.02 (mas) %, zirconium 0.02 (mas) %, copper 99.97%.
Embodiment 29
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder is, silver 0.1 (mas) %, lanthanum 0.1 (mas) %, zirconium 0.1 (mas) %, copper 99.7%.
Embodiment 30
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the side of copper alloy powder is, silver 1.0 (mas) %, lanthanum 1.0 (mas) %, zirconium 1.0 (mas) %, copper 97%.
Comparative Examples 1
Copper alloy powder side is with embodiment 1, and the diamond that is added is without the processing that coats copper.
Comparative Examples 2
Copper alloy powder side is with embodiment 2, and the diamond that is added is without the processing that coats copper.
Comparative Examples 3
Copper alloy powder side is with embodiment 3, and the diamond that is added is without the processing that coats copper.
Comparative Examples 4
Copper alloy powder side is with embodiment 4, and the diamond that is added is without the processing that coats copper.
Comparative Examples 5
Copper alloy powder side is with embodiment 5, and the diamond that is added is without the processing that coats copper.
Comparative Examples 6
Copper alloy powder side is with embodiment 6, and the diamond that is added is without the processing that coats copper.
Comparative Examples 7
Copper alloy powder side is with embodiment 7, and the diamond that is added is without the processing that coats copper.
Comparative Examples 8
Copper alloy powder side is with embodiment 8, and the diamond that is added is without the processing that coats copper.
Comparative Examples 9
Copper alloy powder side is with embodiment 9, and the diamond that is added is without the processing that coats copper.
Comparative Examples 10
Copper alloy powder side is with embodiment 10, and the diamond that is added is without the processing that coats copper.
Comparative Examples 11
Copper alloy powder side is with embodiment 11, and the diamond that is added is without the processing that coats copper.
Comparative Examples 12
Copper alloy powder side is with embodiment 12, and the diamond that is added is without the processing that coats copper.
Comparative Examples 13
Copper alloy powder side is with embodiment 13, and the diamond that is added is without the processing that coats copper.
Comparative Examples 14
Copper alloy powder side is with embodiment 14, and the diamond that is added is without the processing that coats copper.
Comparative Examples 15
Copper alloy powder side is with embodiment 15, and the diamond that is added is without the processing that coats copper.
Comparative Examples 16
Copper alloy powder side is with embodiment 16, and the diamond that is added is without the processing that coats copper.
Comparative Examples 17
Copper alloy powder side is with embodiment 17, and the diamond that is added is without the processing that coats copper.
Comparative Examples 18
Copper alloy powder side is with embodiment 18, and the diamond that is added is without the processing that coats copper.
Comparative Examples 19
Copper alloy powder side is with embodiment 19, and the diamond that is added is without the processing that coats copper.
Comparative Examples 20
Copper alloy powder side is with embodiment 20, and the diamond that is added is without the processing that coats copper.
Comparative Examples 21
Copper alloy powder side is with embodiment 21, and the diamond that is added is without the processing that coats copper.
Comparative Examples 22
Copper alloy powder side is with embodiment 22, and the diamond that is added is without the processing that coats copper.
Comparative Examples 23
Copper alloy powder side is with embodiment 23, and the diamond that is added is without the processing that coats copper.
Comparative Examples 24
Copper alloy powder side is with embodiment 24, and the diamond that is added is without the processing that coats copper.
Comparative Examples 22
Copper alloy powder side is with embodiment 22, and the diamond that is added is without the processing that coats copper.
Comparative Examples 23
Copper alloy powder side is with embodiment 23, and the diamond that is added is without the processing that coats copper.
Comparative Examples 24
Copper alloy powder side is with embodiment 24, and the diamond that is added is without the processing that coats copper.
Comparative Examples 25
Copper alloy powder side is with embodiment 25, and the diamond that is added is without the processing that coats copper.
Comparative Examples 26
Copper alloy powder side is with embodiment 26, and the diamond that is added is without the processing that coats copper.
Comparative Examples 27
Copper alloy powder side is with embodiment 27, and the diamond that is added is without the processing that coats copper.
Comparative Examples 28
Copper alloy powder side is with embodiment 28, and the diamond that is added is without the processing that coats copper.
Comparative Examples 29
Copper alloy powder side is with embodiment 29, and the diamond that is added is without the processing that coats copper.
Comparative Examples 30
Copper alloy powder side is with embodiment 30, and the diamond that is added is without the processing that coats copper.
The performance of the foregoing description 1-30 and Comparative Examples 1-30 is than following table:
As can be seen from the table, the density and hardness of embodiments of the invention is all than Comparative Examples height, and the resistivity of the embodiment of the invention is all less than Comparative Examples.
Comparative Examples 31
The compositing formula of electrical contact material, by weight percentage, for bortz powder (it is heavy to remove coating copper) is 0.05%, copper alloy powder 99.95%.This proportioning is with the embodiment of the invention 1,4,7,10,13,16,19,22,25 and 28.Described diamond dust surface is coated with copper.
Wherein the prescription of copper alloy powder is, silver 0.01 (mas) %, copper 99.99 (mas) %.
Comparative Examples 31 is compared as follows table with the performance of embodiment 1,4,7,10,13,16,19,22,25 and 28:
As seen from the above table, embodiments of the invention all are higher than Comparative Examples 31 at density and hardness, and the resistivity of the embodiment of the invention is all less than Comparative Examples 31.
Comparative Examples 32
The compositing formula of electrical contact material, by weight percentage, for bortz powder (it is heavy to remove coating copper) is 0.5%, copper alloy powder 99.5%.This proportioning is with the embodiment of the invention 2,5,8,11,14,17,20,23,26 and 29.Described diamond dust surface is coated with copper.
Wherein the prescription of copper alloy powder is, silver 0.1 (mas) %, copper 99.9 (mas) %.
Comparative Examples 32 is compared as follows table with the performance of embodiment 2,5,8,11,14,17,20,23,26 and 29:
As seen from the above table, embodiments of the invention all are higher than Comparative Examples 32 at density and hardness, and the resistivity of the embodiment of the invention is all less than Comparative Examples 32.
Comparative Examples 33
The compositing formula of electrical contact material, by weight percentage, for bortz powder (it is heavy to remove coating copper) is 2.0%, copper alloy powder 98%.This proportioning is with the embodiment of the invention 3,6,9,12,15,18,21,24,27 and 30.Described diamond dust surface is coated with copper.
Wherein the prescription of copper alloy powder is, silver 1 (mas) %, copper 99 (mas) %.
Comparative Examples 31 is compared as follows table with the performance of embodiment 3,6,9,12,15,18,21,24,27 and 30:
As seen from the above table, embodiments of the invention all are higher than Comparative Examples 32 at density and hardness, and the resistivity of the embodiment of the invention is all less than Comparative Examples 33.
Claims (13)
1. high-performance copper-copper-diamond electrical contact material comprises following weight percentages:
Diamond dust 0.001～5.0%, copper alloy powder are 95～99.999%, and the particle diameter of wherein said diamond dust is 0.1～15 μ m, and its surface is coated with copper.
2. high-performance copper-copper-diamond electrical contact material according to claim 1 is characterized in that: the raw material of described copper alloy powder by weight percentage, comprises silver 0.001～2.0%, active element 0.002～4.0%, copper surplus.
3. high-performance copper-copper-diamond electrical contact material according to claim 2 is characterized in that: described active element is any one in NiTi composition, nickel zirconium composition, chromium niobium composition or the chromium titanium composition; Nickel accounts for 0.001～2.0% of total raw material percentage by weight in the described NiTi constituent, and titanium accounts for 0.001～2.0% of total raw material percentage by weight; Nickel accounts for 0.001～2.0% of total raw material percentage by weight in the described nickel zirconium composition, and zirconium accounts for 0.001～2.0% of total raw material percentage by weight; Chromium accounts for 0.001～2.0% of total raw material percentage by weight in the described chromium niobium composition, and niobium accounts for 0.001～2.0% of total raw material percentage by weight; Chromium accounts for 0.001～2.0% of total raw material percentage by weight in the described chromium titanium composition, and titanium accounts for 0.001～2.0% of total raw material percentage by weight;
4. high-performance copper-copper-diamond electrical contact material according to claim 2, it is characterized in that: described active element is the composition of rare earth element and silicon or zirconium, wherein in the composition of rare earth element and silicon, rare earth element accounts for 0.001～2.0% of total raw material percentage by weight, and silicon accounts for 0.001～2.0% of total raw material percentage by weight; In the composition of rare earth element and zirconium, rare earth element accounts for 0.001～2.0% of total raw material percentage by weight, and zirconium accounts for 0.001～2.0% of total raw material percentage by weight.
5. high-performance copper-copper-diamond electrical contact material according to claim 3 is characterized in that: described rare earth element is any one in lanthanum, cerium or the yttrium.
6. the manufacturing process of the described high-performance copper-copper-diamond electrical contact material of claim 1, carry out according to following steps:
1) preparation raw material: be equipped with copper alloy powder with the high-pressure water mist legal system, produce the copper clad diamond dust with liquid phase reduction; Then, copper alloy powder and copper clad diamond dust are mixed;
2) preparation electrical contact material: earlier copper alloy and copper clad diamond mixed-powder are carried out heat diffusion treatment; After the compression moulding, carry out vacuum-sintering again, adopt hot extrusion at last, copper-diamond electrical contact material billet is squeezed into section bar;
3) preparation electrical contact section bar:, copper-diamond electrical contact hot extruded shapes is processed into the required size section bar through rolling or drawing and machining.
7. the manufacturing process of the described high-performance copper-copper-diamond electrical contact material of claim 6, it is characterized in that: described hydraulic atomized legal system is equipped with copper alloy powder, be under the nitrogen protection condition, the copper alloy raw material placed in the intermediate frequency furnace melt that temperature is controlled at 1100～1200 ℃; Molten alloyed copper after the fusing through the high-pressure water mist nozzle, is atomized into copper alloy powder; Atomizing pressure is 50～100MPa, condensation rate 10
3～10
4K/s.
8. the manufacturing process of high-performance copper-copper-diamond electrical contact material according to claim 6, it is characterized in that: described liquid phase reduction is produced the copper clad diamond dust, carry out according to following steps,
(1) powder-processed: with sintering furnace graphitization processing is carried out on the diamond dust surface earlier, diluted hydrofluoric acid carries out acid treatment to diamond dust then;
(2) coat copper: adopt reducing process copper on diamond surface coats;
(3) finished product is handled: the diamond dust of copper clad is filtered, washs, and vacuum drying sieves.
9. the manufacturing process of high-performance copper-copper-diamond electrical contact material according to claim 8, it is characterized in that: described diamond dust surface graphitization processing, be under the nitrogen protection condition, bortz powder be put in 900～1000 ℃ the tube furnace and heat-treat, insulation 30～60min;
10. the manufacturing process of high-performance copper-copper-diamond electrical contact material according to claim 8, it is characterized in that: described diamond dust acid treatment is with heat treated diamond dust, puts into the dilute hydrofluoric acid solution of 2～6N, stirs 10～20 minutes; With the clear water flushing,, and filter again to neutral.
11. the manufacturing process of high-performance copper-copper-diamond electrical contact material according to claim 8, it is characterized in that: described reducing process coats copper, be the ammonia solvent copper sulphate with 30%, make it to form cupric ammine complex solution, the concentration of copper ion is 60～80g/L in this solution; Use ammoniacal liquor again, the pH value of cupric ammine complex solution is adjusted to 8.5～11, and makes solution temperature remain on 20 ℃～40 ℃.Then, the bortz powder of acid treatment is put into cupric ammine complex solution, constantly stir, and to drip concentration be 40% hydrazine hydrate, reduce coating.
12. the manufacturing process of high-performance copper-copper-diamond electrical contact material according to claim 6, it is characterized in that: described heat diffusion treatment, the powder that mixes is put into tube furnace, under the condition of nitrogen protection, carry out heat diffusion treatment, make and produce metallurgical binding formation solid solution between copper clad diamond dust and the copper alloy; The thermal diffusion temperature is 400～800 ℃, and temperature retention time is 2～6 hours.
13. the manufacturing process of high-performance copper-copper-diamond electrical contact material according to claim 6 is characterized in that: described compression moulding, the pressing pressure of isostatic pressing machine is at 50～300MPa, 3～5 seconds dwell times; Described vacuum-sintering is that copper-diamond electrical contact billet is put into sintering furnace, and its vacuum is less than 5 * 10
-3Pa, 750～950 ℃ of sintering temperatures, temperature retention time 1～2 hour; Described hot extrusion, the pressure of extruder are 15～25MPa, and the hot extrusion ratio is 10～25,600～850 ℃ of extrusion temperatures.
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| CN103489665A (en) * | 2013-10-08 | 2014-01-01 | 哈尔滨东大高新材料股份有限公司 | Contact material used for high-breaking low-voltage electric appliance, method for manufacturing contact material, composite contact material used for high-breaking low-voltage electric appliance and method for manufacturing composite contact material |
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Effective date of registration: 20151203 Address after: 325600, No. six, No. 181, Yueqing Economic Development Zone, Zhejiang, Wenzhou Patentee after: WENZHOU LONGSUN ELECTRICAL ALLOY CO., LTD. Address before: 201603 No. 3168 Shen brick road, Sheshan Town, Shanghai, Songjiang District Patentee before: Shanghai Longsun Alloy Co., Ltd. |