CN115606000A - 显示基板及其制备方法、显示装置 - Google Patents

显示基板及其制备方法、显示装置 Download PDF

Info

Publication number
CN115606000A
CN115606000A CN202180000072.4A CN202180000072A CN115606000A CN 115606000 A CN115606000 A CN 115606000A CN 202180000072 A CN202180000072 A CN 202180000072A CN 115606000 A CN115606000 A CN 115606000A
Authority
CN
China
Prior art keywords
transistor
electrode
control
shift register
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180000072.4A
Other languages
English (en)
Inventor
陈腾
蒋发明
陈日
加新星
孟维欣
郭钟旭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chongqing BOE Display Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chongqing BOE Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Chongqing BOE Display Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Publication of CN115606000A publication Critical patent/CN115606000A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266—Details of drivers for scan electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0408—Integration of the drivers onto the display substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)

Abstract

提供了一种显示基板，包括：衬底基板(30)以及设置在衬底基板(30)上的第一半导体层、第一导电层、第二半导体层、第二导电层和第三导电层。第一半导体层至少包括：移位寄存器单元的至少一个第二半导体型晶体管的有源层。第一导电层至少包括：移位寄存器单元的至少一个第二半导体型晶体管的控制极、至少一个电容的第一电极。第二半导体层至少包括：移位寄存器单元的至少一个第一半导体型晶体管的有源层。第二导电层至少包括：移位寄存器单元的至少一个第一半导体型晶体管的控制极、至少一个电容的第二电极。第三导电层至少包括：移位寄存器单元的至少一个第一半导体型晶体管和至少一个第二半导体型晶体管的第一极和第二极。

Description

PCT国内申请，说明书已公开。

Claims (18)

  1. PCT国内申请，权利要求书已公开。
CN202180000072.4A 2021-01-26 2021-01-26 显示基板及其制备方法、显示装置 Pending CN115606000A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/073726 WO2022160088A1 (zh) 2021-01-26 2021-01-26 显示基板及其制备方法、显示装置

Publications (1)

Publication Number Publication Date
CN115606000A true CN115606000A (zh) 2023-01-13

Family

ID=82652962

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180000072.4A Pending CN115606000A (zh) 2021-01-26 2021-01-26 显示基板及其制备方法、显示装置

Country Status (4)

Country Link
US (1) US20230317015A1 (zh)
EP (1) EP4123707A4 (zh)
CN (1) CN115606000A (zh)
WO (1) WO2022160088A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240087536A1 (en) * 2021-12-22 2024-03-14 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate and manufacturing method therefor, and display apparatus

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9153341B2 (en) * 2005-10-18 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Shift register, semiconductor device, display device, and electronic device
KR101736319B1 (ko) * 2010-12-14 2017-05-17 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
EP4060750A1 (en) * 2014-12-31 2022-09-21 LG Display Co., Ltd. Display backplane having multiple types of thin-film-transistors
CN104900192B (zh) * 2015-07-01 2017-10-10 京东方科技集团股份有限公司 移位寄存器单元及其驱动方法、栅极驱动电路、显示装置
CN106157893B (zh) * 2016-09-09 2018-12-11 京东方科技集团股份有限公司 移位寄存器单元及其驱动方法、驱动电路和显示装置
JP2018066801A (ja) * 2016-10-18 2018-04-26 株式会社ジャパンディスプレイ 表示装置及びシフトレジスタ回路
US10418385B2 (en) * 2016-11-18 2019-09-17 Shanghai Tianma Micro-electronics Co., Ltd. Array substrate and fabrication method thereof, display panel
JP6706570B2 (ja) * 2016-12-05 2020-06-10 株式会社Ｊｏｌｅｄ 半導体装置、半導体装置の製造方法および表示装置
KR102636515B1 (ko) * 2017-01-06 2024-02-15 삼성디스플레이 주식회사 유기발광 표시장치
KR102571610B1 (ko) * 2017-02-13 2023-08-30 삼성디스플레이 주식회사 반도체 장치 및 이의 제조방법
CN106876412A (zh) * 2017-03-15 2017-06-20 厦门天马微电子有限公司 一种阵列基板以及制作方法
CN107731858B (zh) * 2017-10-27 2020-05-12 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示面板
CN107564459B (zh) * 2017-10-31 2021-01-05 合肥京东方光电科技有限公司 移位寄存器单元、栅极驱动电路、显示装置及驱动方法
CN108288621B (zh) * 2018-03-09 2021-01-26 京东方科技集团股份有限公司 阵列基板的制造方法、阵列基板及显示面板
CN109166600B (zh) * 2018-10-26 2021-01-15 京东方科技集团股份有限公司 移位寄存器单元及其驱动方法、栅极驱动电路、显示装置
WO2021031167A1 (zh) * 2019-08-21 2021-02-25 京东方科技集团股份有限公司 显示基板、显示装置及显示基板的制作方法
KR102668997B1 (ko) * 2019-10-21 2024-05-24 삼성디스플레이 주식회사 표시 장치
CN110808012B (zh) * 2019-11-28 2021-02-26 京东方科技集团股份有限公司 像素电路、移位寄存器单元、栅极驱动电路和显示装置
CN110942742B (zh) * 2019-12-10 2020-05-22 京东方科技集团股份有限公司 栅极驱动单元及驱动方法、栅极驱动电路和显示装置
CN210956110U (zh) * 2019-12-24 2020-07-07 北京京东方技术开发有限公司 一种显示装置

Also Published As

Publication number Publication date
EP4123707A4 (en) 2023-09-06
EP4123707A1 (en) 2023-01-25
WO2022160088A1 (zh) 2022-08-04
US20230317015A1 (en) 2023-10-05

Similar Documents

Publication Publication Date Title
JP2022518075A (ja) ディスプレイパネル及びその製造方法、表示装置
US10868103B2 (en) Wiring structure and manufacture method thereof, OLED array substrate and display device
WO2022110650A1 (zh) 一种显示基板、显示装置
JP2023515075A (ja) ローカルアクティブマトリクスアーキテクチャ
CN114122025A (zh) 显示基板及其制备方法、显示装置
CN113963667A (zh) 一种显示装置及其驱动方法
WO2023280314A1 (zh) 显示基板及显示装置
WO2022160088A1 (zh) 显示基板及其制备方法、显示装置
WO2022160086A1 (zh) 移位寄存器单元及其驱动方法、栅极驱动电路、显示基板
WO2020088230A1 (zh) 显示基板及显示装置
US11972727B2 (en) Display substrate and display device
CN100489939C (zh) 有源矩阵式有机电致发光显示面板
CN115836597A (zh) 显示面板及显示装置
CN115398532B (zh) 显示基板及其制备方法、显示装置
CN219228311U (zh) 显示基板和显示装置
WO2022246631A1 (zh) 像素电路及其驱动方法、显示装置
WO2023115401A1 (zh) 显示基板及其制备方法、显示装置
US20240233646A1 (en) Display substrate and display device
WO2023122980A1 (zh) 显示基板及其制备方法、显示装置
WO2023019578A1 (zh) 像素电路及其驱动方法、显示装置
JP2024523772A (ja) 表示基板及びその製造方法、表示装置
KR20240011655A (ko) 디스플레이 기판 및 이의 제조 방법, 디스플레이 장치
CN113964153A (zh) 显示装置
CN118301991A (zh) 显示基板和显示装置
CN101132661A (zh) 有源矩阵式有机电激发光显示面板的制造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination