CN115515327A - 一种应用于陶瓷基板的化学镍金工艺 - Google Patents
一种应用于陶瓷基板的化学镍金工艺 Download PDFInfo
- Publication number
- CN115515327A CN115515327A CN202211305249.4A CN202211305249A CN115515327A CN 115515327 A CN115515327 A CN 115515327A CN 202211305249 A CN202211305249 A CN 202211305249A CN 115515327 A CN115515327 A CN 115515327A
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- CN
- China
- Prior art keywords
- nickel
- ceramic substrate
- nickel plating
- palladium alloy
- process applied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000758 substrate Substances 0.000 title claims abstract description 80
- 239000000919 ceramic Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 52
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 title claims abstract description 46
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 292
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 146
- 238000007747 plating Methods 0.000 claims abstract description 113
- 229910001252 Pd alloy Inorganic materials 0.000 claims abstract description 43
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims abstract description 22
- 238000009713 electroplating Methods 0.000 claims abstract description 19
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 11
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000000227 grinding Methods 0.000 claims abstract description 5
- 238000000016 photochemical curing Methods 0.000 claims abstract description 5
- 239000003381 stabilizer Substances 0.000 claims description 18
- 238000005406 washing Methods 0.000 claims description 18
- 239000008139 complexing agent Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 11
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical group [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 claims description 11
- 235000019345 sodium thiosulphate Nutrition 0.000 claims description 11
- 239000003638 chemical reducing agent Substances 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 9
- PWCMMIJSBAYEMF-UHFFFAOYSA-N sulfurothioic O-acid urea Chemical compound S(=S)(=O)(O)O.NC(=O)N PWCMMIJSBAYEMF-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 229910052691 Erbium Inorganic materials 0.000 claims description 5
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 5
- 229910001380 potassium hypophosphite Inorganic materials 0.000 claims description 5
- CRGPNLUFHHUKCM-UHFFFAOYSA-M potassium phosphinate Chemical compound [K+].[O-]P=O CRGPNLUFHHUKCM-UHFFFAOYSA-M 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 4
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 4
- GJYJYFHBOBUTBY-UHFFFAOYSA-N alpha-camphorene Chemical compound CC(C)=CCCC(=C)C1CCC(CCC=C(C)C)=CC1 GJYJYFHBOBUTBY-UHFFFAOYSA-N 0.000 claims description 4
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- 238000005238 degreasing Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000013077 target material Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 67
- 238000003466 welding Methods 0.000 description 15
- 238000012360 testing method Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000009776 industrial production Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- -1 hypophosphorous acid compound Chemical class 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 150000002941 palladium compounds Chemical class 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 206010037544 Purging Diseases 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003916 ethylene diamine group Chemical group 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1605—Process or apparatus coating on selected surface areas by masking
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
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Abstract
本发明涉及陶瓷基板技术领域,具体涉及一种应用于陶瓷基板的化学镍金工艺,包括如下步骤:步骤一:首先在陶瓷基板上制作线路,陶瓷基板沉积金属层,通过刻蚀得到具有连通线路的陶瓷基板;步骤二:采用光刻胶涂敷在陶瓷基板上,选用线路配合的模板进行光固化;步骤三:通过清洗去除陶瓷基板上多余的光刻胶,形成具有线路掩膜的镀镍基板;步骤四:通过研磨祛除多余的光刻胶,并得到具有一定粗糙度的金属面进行电镀镍金;步骤五:电镀作为镍靶材的钯合金,钯合金中掺入质量比0.2%‑0.4%的稀土元素;步骤六:激发钯合金,在钯合金外进行化学镀镍,通过还原渡镍液中的氧化镍在金属面上形成镍镀层;步骤七:去除覆盖的光刻胶以及多余的镍层。
Description
技术领域
本发明涉及半导体制造技术领域,具体涉及一种应用于陶瓷基板的化学镍金工艺。
背景技术
随着陶瓷基板高,集成化高,密集化的不断提高,对兀器件的表面封装中的焊接要求和焊接的可靠性也越来越高,目前陶瓷基板大多采用化学镀镍金。来提高元器件的表面封装的焊接性能,但是化学镀钯金存在以下严重不足:高端陶瓷基板(如DBC基板)对其可焊性以及焊点可靠性要求非常高,并且也很难通过化学镍金来达到一定厚度,当镍层较厚时,当金属线路间距较小时,在线路表面做化学镍金处理,线路间距内陶瓷上将有可能会被沉积上镍金而造成线路短路。其原因在于化学镍金过程屮因线路间隙太小,很难做到清洗彻底导致间隙内金属离子残留被沉积上镍金,造成线路短路。
因此,需要对现有的陶瓷基板金属表面电镀镍金处理方法进行改进,以克服以上金属层线路表面化学镍金处理所带来的弊端,大大提高焊盘的可焊性以及焊点的可靠性,并解决电镀镍金带来的镀层突沿等问题。
发明内容
本发明要解决的问题是提供了一种工艺过程简单,且能够大大提高焊点的可靠性的应用于陶瓷基板的化学镍金工艺。
为解决上述技术问题,本发明采用的技术方案是:一种应用于陶瓷基板的化学镍金工艺,包括如下步骤:
步骤一:首先在陶瓷基板上制作线路,所述陶瓷基板沉积金属层,通过刻蚀得到具有连通线路的陶瓷基板;
步骤二:采用光刻胶涂敷在所述陶瓷基板上,选用线路配合的模板进行光固化;
步骤三:通过清洗去除所述陶瓷基板上多余的光刻胶,形成具有线路掩膜的镀镍基板;
步骤四:通过研磨祛除多余的光刻胶,并得到具有一定粗糙度的金属面进行电镀镍金;
步骤五:电镀作为镍靶材的钯合金,所述钯合金中掺入质量比0.2%-0.4%的稀土元素;
步骤六:激发所述钯合金,在钯合金外进行化学镀镍,通过还原渡镍液中的氧化镍在所述金属面上形成镍镀层;
步骤七:去除覆盖的光刻胶以及多余的镍层。
进一步的,所述镍镀层中掺杂稀土元素,所述镍镀层掺杂的稀土元素所占质量比为0.2%-0.4%。
进一步的,步骤六中,镀镍的温度为50-85℃,镀镍3-5min,根据需要镀层的厚度可重复多次,优选的为2-4次。
进一步的,步骤六中,所述镍镀层的厚度为1-16μm。
进一步的,步骤五中,所述钯合金的溅射功率为15-21kw,溅射气压0.3Pa,负偏压450V,沉积温度200℃,沉积时间10-30min。
进一步的,所述镀镍液包括氧化镍、还原剂、络合剂、稳定剂和溶剂。
进一步的,所述稳定剂为硫代硫酸钠和硫代尿素,所述稳定剂在化学镀镍液中的总浓度为1-5g/L,其中所述硫代硫酸钠与所述硫代尿素的浓度之比为1:(2-4);
络合剂为C4O6H4KNa或乙二胺的一种,所述络合剂在化学镀镍液中的总浓度为30-100g/L;
所述还原剂包括次磷酸钠、次磷酸钾以及次磷酸铵中的至少一种。
进一步的,所述稀土元素包括镧、铈、铒、钇中的至少一种稀土元素。
进一步的,包括预处理步骤,所述预处理步骤包括:除油、抛光、酸洗、水洗、烘干、离子束清洗和预热步骤。
进一步的,陶瓷基板为氧化铝、氮化铝、碳化硅、氧化铍的一种。
与现有技术相比,本发明具有的优点和积极效果是:
本发明提供的应用于陶瓷基板的化学镍金工艺,主要是解决了常规化学镀镍金的线路间距小的问题和难以到达一定厚度的问题,进一步提高了提高焊盘的可焊性以及焊点的可靠性,并解决了产品的品质和可靠性无法满足高可焊性的要求,以及电镀镍金带来的镀层突沿等问题。使其具有较好的使用寿命,使金面持久保留优良的焊接性能,排除了虚焊,漏焊,焊接可靠性差等缺陷,从而提高了产品品质和产品可靠性,生产过程无污染,能够使用于更小的基材,更适应行业的发展且适合工业化生产。
具体实施方式
为了更好的理解本发明,下面结合具体实施例对本发明进行进一步的描述。
高端陶瓷基板(如DBC基板)对其可焊性以及焊点可靠性要求非常高,并且也很难通过化学镍金来达到一定厚度,当镍层较厚时,当金属线路间距较小时,在线路表面做化学镍金处理,线路间距内陶瓷上将有可能会被沉积上镍金而造成线路短路。其原因在于化学镍金过程屮因线路间隙太小,很难做到清洗彻底导致间隙内金属离子残留被沉积上镍金,造成线路短路。
因此,需要对现有的陶瓷基板金属表面电镀镍金处理方法进行改进,在此基础上进行优化,以克服以上金属层线路表面化学镍金处理所带来的弊端,大大提高焊盘的可焊性以及焊点的可靠性,并解决电镀镍金带来的镀层突沿等问题。
在现有技术中,也有采用铜等金属进行压膜,曝光显影等方式制作铜金属膜作为掩膜等,但在处理的过程中,由于金属类掩膜与镍金属之间具有相对较为相似的化学性质,并且也具有比较好的结合力,在去除金属类掩膜时,很容易造成镍金属层边缘的损伤,或金属类掩膜去除不完全的问题。
借此得到了一种工艺过程简单,且能够解决金属掩膜存在的问题,提高焊盘的可靠性的应用于陶瓷基板的化学镍金工艺。
根据本发明一方面总体上的发明构思,提供了一种应用于陶瓷基板的化学镍金工艺,包括如下步骤:
步骤一:首先在陶瓷基板上制作线路,陶瓷基板沉积金属层,通过刻蚀得到具有连通线路的陶瓷基板;
步骤二:采用光刻胶涂敷在陶瓷基板上,选用线路配合的模板进行光固化;
步骤三:通过清洗去除陶瓷基板上多余的光刻胶,形成具有线路掩膜的镀镍基板;
步骤四:通过研磨祛除多余的光刻胶,并得到具有一定粗糙度的金属面进行电镀镍金;
步骤五:电镀作为镍靶材的钯合金,钯合金中掺入质量比0.2%-0.4%的稀土元素;
步骤六:激发钯合金,在钯合金外进行化学镀镍,通过还原渡镍液中的氧化镍在金属面上形成镍镀层;
步骤七:去除覆盖的光刻胶以及多余的镍层。
本发明提供的应用于陶瓷基板的化学镍金工艺,主要是解决了常规化学镀镍金的线路间距小的问题和难以到达一定厚度的问题,进一步提高了提高焊盘的可焊性以及焊点的可靠性,并解决了产品的品质和可靠性无法满足高可焊性的要求,以及电镀镍金带来的镀层突沿等问题。使其具有较好的使用寿命,使金面持久保留优良的焊接性能,排除了虚焊,漏焊,焊接可靠性差等缺陷,从而提高了产品品质和产品可靠性,生产过程无污染,能够使用于更小的基材,更适应行业的发展且适合工业化生产。
通过光刻胶能够有效覆盖线路,并且通过刻蚀光刻胶得到的模板能够具有比较均匀的线路,在进行镀镍之后,也能够直接通过清洗去除光刻胶获得比较平整的镍镀层,并且通过控制光刻胶的厚度,也能够获得较厚的镍镀层,不用担心镍镀层完全覆盖导致的难以去除掩膜的情况,可以使光刻胶的厚度远大于镀层的厚度,然后对表面进行细致的打磨,既可以得到平整的表面,也可以使镀层能够得到比较规整的边缘,并且能够去除光刻胶表面的镍层,暴露出光刻胶,使其能够更为方便的去除。
进一步的,步骤五中,镍镀层掺杂的稀土元素所占质量比为0.2%-0.4%。
进一步的,步骤五中,镍镀层掺杂的稀土元素所占质量比可以为0.2%、0.25%、0.3%、0.35%、0.4%等。
进一步的,稀土元素包括镧、铈、铒、钇中的至少一种稀土元素。
进一步的,步骤五中,钯合金可以采用电镀、蒸镀、溅镀、化学电镀、化学沉积等方法。
进一步的,步骤五中,当钯合金采用溅镀时,钯合金的溅射功率为15-21kw,溅射气压0.3Pa,负偏压450V,沉积温度200℃,沉积时间10-30min。
进一步的,当钯合金采用化学沉积时,将镀镍基板放置入化学镀钯溶液中,其中,化学镀钯溶液包括钯化合物、次磷酸化合物、硼氢化合物、氯化铵、氨水、以及复合络合剂,以及络合稳定剂,通过复合的络合剂以及络合稳定剂能够有利于钯化合物进行分散,且能够起到防止沉淀的作用。
通过靶层能够增加镍金的结合力,使镍层的厚度可控,通过多次沉积也能够获得结合力更好的镍层,且通过稀土元素的添加能够改善镍层之间或镍层与靶层的致密性和覆盖性,从而能够提高镍层与镍层之间的结合能力,从而使镍层的厚度可以进行随意控制,从而能够解决镍层突沿的问题。并且稀土元素的添加也能够起到一定的稳定剂的作用,能够节省许多贵金属稳定剂的添加。
进一步的,步骤六中,镀镍的温度为50-85℃,镀镍3-5min,根据需要镀层的厚度可重复多次,优选的为2-4次。
进一步的,步骤六中,每次镀镍过程经过每一个周期后,可以将基板从镀镍液中去除,进行清洗,打磨,观察其表面结构后进行继续镀镍,通过在多层级之间制备具有微结构的表面,增加镍层与镍层之间的结合力,防止镍层剥离,或直接在镀镍液中继续镀镍,进行连续的镀镍直至镀镍完成。
进一步的,步骤六中,镍镀层的厚度为1-16μm,镍镀层中掺杂稀土元素。
进一步的,镍镀层的厚度可以为1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16μm。
经过多次试验,可以知晓,经过本发明进行化学镀镍,能够最高达到16μm的镍镀层,在此范围内能够得到比较好的使用效果,相比于一般的镀镍层的10μm以下的厚度,本申请能够得到比较稳定的镍镀层,且不会因为镍镀层的厚度影响线路间隙。
进一步的,镀镍液包括氧化镍、还原剂、络合剂、稳定剂和溶剂。
进一步的,稳定剂为硫代硫酸钠和硫代尿素,稳定剂在化学镀镍液中的总浓度为1-5g/L,其中硫代硫酸钠与硫代尿素的浓度之比为1:(2-4)。
进一步的,稳定剂在化学镀镍液中的总浓度可以为1、2、3、4、5g/L,硫代硫酸钠与硫代尿素的浓度之比可以为1:2、1:3或1:4。
进一步的,络合剂为C4O6H4KNa或乙二胺的一种,络合剂在化学镀镍液中的总浓度为30-100g/L。
进一步的,络合剂在化学镀镍液中的总浓度可以为30、40、50、60、70、80、90、100g/L。
进一步的,还原剂包括次磷酸钠、次磷酸钾以及次磷酸铵中的至少一种。
进一步的,包括预处理步骤,预处理步骤包括:除油、抛光、酸洗、水洗、烘干、离子束清洗和预热步骤。
进一步的,预处理步骤可包括:将陶瓷基板进行水洗,出去表面浮土,并进行酸洗,除去表面氧化物,采用酸洗液再次进行水洗除酸,经过驱氢处理,再进行水洗,再采用70-85℃热风吹干,转入镀镍工序。
通过酸洗能够去除表面的氧化膜,且能够使其表面具有轻微的腐蚀效果,使其表面粗糙,从而增加表面的与金属或光刻胶的结合能力,从而减少不同材质之间出现应力集中,镀层或掩膜脱离的现象,通过驱氢处理能够处理酸洗过程中的渗氢情况,从而减少其应力腐蚀现象和氢脆现象,使其具有较好的结合性能,从而改善金属层内应力较高的现象导致结合度差的问题;
进一步的,驱氢处理包括:180-200℃加热烘烤,3-4h。
进一步的,步骤五中,电镀作为镍靶材的钯合金后,还需要进行水洗,水洗时间为l-2min,温度为室温,后进行烘干,温度为50-60℃,85℃热风吹干,时间为3-4min。
进一步的,陶瓷基板为氧化铝、氮化铝、碳化硅、氧化铍的一种。
进一步的,陶瓷基板也可以为陶瓷金属化基板,例如陶瓷镀铜基板等等陶瓷基的基板。
进一步的,本申请主要针对陶瓷基板与镍镀层之间结合力较差的问题进行设计,但本申请的方法不仅仅可以用于陶瓷基板,还可以用于其他的基板的镀镍中,具体的使用可以根据实际情况进行调整。
以下通过较佳实施例来对本发明的技术方案作详细说明,需要说明的是,下文中的具体实施例仅用于示例,并不用于限制本发明。
实施例1:
包括预处理和镀镍步骤,其中预处理为:陶瓷基板进行水洗,出去表面浮土,并进行酸洗,除去表面氧化物,采用酸洗液再次进行水洗除酸,经过驱氢处理,再进行水洗,再采用70-85℃热风吹干,转入镀镍工序;
其中,镀镍步骤为:
步骤一:首先在陶瓷基板上制作线路,陶瓷基板沉积金属层,通过刻蚀得到具有连通线路的陶瓷基板,陶瓷基板为氧化铝;
步骤二:采用光刻胶涂敷在陶瓷基板上,选用线路配合的模板进行光固化;
步骤三:通过清洗去除陶瓷基板上多余的光刻胶,形成具有线路掩膜的镀镍基板;
步骤四:通过研磨祛除多余的光刻胶,并得到具有一定粗糙度的金属面进行电镀镍金;
步骤五:电镀作为镍靶材的钯合金,钯合金中掺入质量比0.2%的镧,钯合金的溅射功率为21kw,溅射气压0.3Pa,负偏压450V,沉积温度200℃,沉积时间30min;
步骤六:激发钯合金,在钯合金外进行化学镀镍,通过还原渡镍液中的氧化镍在金属面上形成镍镀层,镍镀层掺杂的0.2%的镧,镀镍的温度为50℃,镀镍3min,重复镀镍4次,镍镀层的厚度为8μm,稳定剂的总浓度为1g/L,其中硫代硫酸钠与硫代尿素的浓度之比为1:2;
络合剂为总浓度为30g/L的C4O6H4KNa;
还原剂包括次磷酸钠;
步骤七:去除覆盖的光刻胶以及多余的镍层,作为实验组A。
实施例2:
预处理步骤与实施例1相同;
其中,镀镍步骤为:
步骤一至步骤四与实施例1相同,其中,不同的为陶瓷基板的类型为氮化铝;
步骤五:电镀作为镍靶材的钯合金,钯合金中掺入质量比0.3%的铈,钯合金的溅射功率为17kw,溅射气压0.3Pa,负偏压450V,沉积温度200℃,沉积时间20min;
步骤六:激发钯合金,在钯合金外进行化学镀镍,通过还原渡镍液中的氧化镍在金属面上形成镍镀层,镍镀层掺杂的稀土元素为0.3%的铈,镀镍的温度为85℃,镀镍4min,根据需要镀层的厚度可重复多次,优选的为3次,镍镀层的厚度为12μm,稳定剂的总浓度为2g/L,其中硫代硫酸钠与硫代尿素的浓度之比为1:3;
络合剂为总浓度为50g/L的乙二胺;
还原剂包括次磷酸钾;
步骤七:去除覆盖的光刻胶以及多余的镍层,作为实验组B。
实施例3:
预处理步骤与实施例1相同;
其中,镀镍步骤为:
步骤一至步骤四与实施例1相同,其中,不同的为陶瓷基板的类型为碳化硅;
步骤五:电镀作为镍靶材的钯合金,钯合金中掺入质量比0.4%的铒,钯合金的溅射功率为21kw,溅射气压0.3Pa,负偏压450V,沉积温度200℃,沉积时间30min;
步骤六:激发钯合金,在钯合金外进行化学镀镍,通过还原渡镍液中的氧化镍在金属面上形成镍镀层,镍镀层掺杂的稀土元素为0.4%的铒,镀镍的温度为65℃,镀镍5min,根据需要镀层的厚度可重复多次,优选的为4次,镍镀层的厚度为16μm,稳定剂的总浓度为4g/L,其中硫代硫酸钠与硫代尿素的浓度之比为1:4;
络合剂为总浓度为70g/L的C4O6H4KNa;
还原剂包括次磷酸钾;
步骤七:去除覆盖的光刻胶以及多余的镍层,作为实验组C。
实施例4:
预处理步骤与实施例1相同;
其中,镀镍步骤为:
步骤一至步骤四与实施例1相同,其中,不同的为陶瓷基板的类型为氧化铍;
步骤五:电镀作为镍靶材的钯合金,钯合金中掺入质量比0.4%的钇,钯合金的溅射功率为21kw,溅射气压0.3Pa,负偏压450V,沉积温度200℃,沉积时间30min;
步骤六:激发钯合金,在钯合金外进行化学镀镍,通过还原渡镍液中的氧化镍在金属面上形成镍镀层,镍镀层掺杂的稀土元素为0.4%的钇,镀镍的温度为85℃,镀镍4min,根据需要镀层的厚度可重复多次,优选的为4次,镍镀层的厚度为14μm,稳定剂的总浓度为5g/L,其中硫代硫酸钠与硫代尿素的浓度之比为1:4;
络合剂为总浓度为100g/L的C4O6H4KNa;
还原剂包括次磷酸铵;
步骤七:去除覆盖的光刻胶以及多余的镍层,作为实验组D。
对比例1:
包括预处理和镀镍步骤均与实施例1相同,其中不同的为掩膜采用铜合金,最后去除作为掩膜的铜合金,以此作为对照组A。
对比例2:
包括预处理和镀镍步骤均与实施例1相同,其中不同的为在步骤五和步骤六中未添加稀土材料,以此作为对照组B。
实验组1:
观察实验组A-D以及对照组A表面线路的情况,主要观察线路的宽度、均匀情况、镍层边缘的情况以及线路中是否有镍或掩膜的残留情况。通过观察可知,实验组A-D中线路情况良好,而对照组A中镍层边缘存在几处铜金属残留,并且镍层边缘出现了细微的损伤,由此可知,通过光刻胶能够有效覆盖线路,并且通过刻蚀光刻胶得到的模板能够具有比较均匀的线路,在进行镀镍之后,也能够直接通过清洗去除光刻胶获得比较平整的镍镀层,并且通过控制光刻胶的厚度,也能够获得较厚的镍镀层,不用担心镍镀层完全覆盖导致的难以去除掩膜的情况,可以使光刻胶的厚度远大于镀层的厚度,然后对表面进行细致的打磨,既可以得到平整的表面,也可以使镀层能够得到比较规整的边缘,并且能够去除光刻胶表面的镍层,暴露出光刻胶,使其能够更为方便的去除。
实验组2:
常规焊接性能的影响主要受金属表面的损伤的影响,因此采用盐雾试验以及损伤试验来表征本发明提供的镀镍工艺中产品的效果。
(1)抗盐雾试验:采用实施例1-4的陶瓷基板作为实验组,采用对比例2作为对照组,将其进行抗盐雾试验,将实验组A-D与对照组A、B分别放进抗盐雾试验箱,测定其表面出现腐蚀的时间,结果见表1。
表1:抗盐雾试验结果
通过表1可知,本发明提供的应用于陶瓷基板的化学镍金工艺,主要是解决了常规化学镀镍的腐蚀问题,杜绝了因腐蚀而造成的化学镀镍的可焊性不良,耐气候条件差,产品的品质和可靠性无法满足高可焊性的要求。可以大幅度提升化学镀镍的抗腐蚀性,使金属面持久保留优良的焊接性能,排除了虚焊,漏焊,焊接可靠性差等缺陷,从而提高了产品品质和产品可靠性,生产过程无污染,适合工业化生产。
(2)损伤试验:采用实施例1-4的陶瓷基板作为实验组,采用对比例2作为对照组,将其进行摩擦抛光以及弯折实验。
摩擦抛光试验具体操作方法为:将镀件放在震动抛光机内,并以肥皂水溶液作润滑剂进行摩擦抛光试验,观察其表面是否存在损伤。
弯折实验具体的操作方法为:将该镀镍层将该镀镍层经180°弯曲试验测试,然后再用放大100倍的放大镜检查弯曲部分,观察是否出现明显的裂纹或起皮脱落的现象,结果见表2。
表2:损伤试验结果
实验组A | 实验组B | 实验组C | 实验组D | 对照组B | |
摩擦抛光 | 平整 | 平整 | 平整 | 平整 | 轻微破损 |
弯折实验 | 无损伤 | 无损伤 | 无损伤 | 无损伤 | 轻微脱落 |
实施例1-4所得到的镀件实验组A-D,其表面镀层均匀,外观平整,都没有出现损伤或起泡的现象;但是对比对照组B,其表面有明显的起泡或损伤现象;说明镀镍层与基材的结合力没有达到市场需求的效果。
由此可知,本发明得到的镀件,其表面牢固均匀,完全不会出现起泡的现象,说明本发明得到的镀镍层与基材的结合力非常的好,由此完美保证了镀层结构的致密性。
以上对本发明的实施例进行了详细说明,但所述内容仅为本发明的较佳实施例,不能被认为用于限定本发明的实施范围。凡依本发明范围所作的均等变化与改进等,均应仍归属于本专利涵盖范围之内。
Claims (10)
1.一种应用于陶瓷基板的化学镍金工艺,其特征在于:包括如下步骤:
步骤一:首先在陶瓷基板上制作线路,所述陶瓷基板沉积金属层,通过刻蚀得到具有连通线路的陶瓷基板;
步骤二:采用光刻胶涂敷在所述陶瓷基板上,选用线路配合的模板进行光固化;
步骤三:通过清洗去除所述陶瓷基板上多余的光刻胶,形成具有线路掩膜的镀镍基板;
步骤四:通过研磨祛除多余的光刻胶,并得到具有一定粗糙度的金属面进行电镀镍金;
步骤五:电镀作为镍靶材的钯合金,所述钯合金中掺入质量比0.2%-0.4%的稀土元素;
步骤六:激发所述钯合金,在钯合金外进行化学镀镍,通过还原渡镍液中的氧化镍在所述金属面上形成镍镀层;
步骤七:去除覆盖的光刻胶以及多余的镍层。
2.根据权利要求1所述的一种应用于陶瓷基板的化学镍金工艺,其特征在于:所述镍镀层中掺杂稀土元素,所述镍镀层掺杂的稀土元素所占质量比为0.2%-0.4%。
3.根据权利要求1所述的一种应用于陶瓷基板的化学镍金工艺,其特征在于:步骤六中,镀镍的温度为50-85℃,镀镍3-5min,根据需要镀层的厚度可重复多次,优选的为2-4次。
4.根据权利要求1所述的一种应用于陶瓷基板的化学镍金工艺,其特征在于:步骤六中,所述镍镀层的厚度为1-16μm。
5.根据权利要求1所述的一种应用于陶瓷基板的化学镍金工艺,其特征在于:步骤五中,所述钯合金的溅射功率为15-21kw,溅射气压0.3Pa,负偏压450V,沉积温度200℃,沉积时间10-30min。
6.根据权利要求1所述的一种应用于陶瓷基板的化学镍金工艺,其特征在于:所述镀镍液包括氧化镍、还原剂、络合剂、稳定剂和溶剂。
7.根据权利要求6所述的一种应用于陶瓷基板的化学镍金工艺,其特征在于:所述稳定剂为硫代硫酸钠和硫代尿素,所述稳定剂在化学镀镍液中的总浓度为1-5g/L,其中所述硫代硫酸钠与所述硫代尿素的浓度之比为1:(2-4);
络合剂为C4O6H4KNa或乙二胺的一种,所述络合剂在化学镀镍液中的总浓度为30-100g/L;
所述还原剂包括次磷酸钠、次磷酸钾以及次磷酸铵中的至少一种。
8.根据权利要求1所述的一种应用于陶瓷基板的化学镍金工艺,其特征在于:所述稀土元素包括镧、铈、铒、钇中的至少一种稀土元素。
9.根据权利要求1所述的一种应用于陶瓷基板的化学镍金工艺,其特征在于:包括预处理步骤,所述预处理步骤包括:除油、抛光、酸洗、水洗、烘干、离子束清洗和预热步骤。
10.根据权利要求1所述的一种应用于陶瓷基板的化学镍金工艺,其特征在于:陶瓷基板为氧化铝、氮化铝、碳化硅、氧化铍的一种。
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