CN115420952B - High temperature piezoresistive property measurement platform and method - Google Patents
High temperature piezoresistive property measurement platform and method Download PDFInfo
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- CN115420952B CN115420952B CN202211373362.6A CN202211373362A CN115420952B CN 115420952 B CN115420952 B CN 115420952B CN 202211373362 A CN202211373362 A CN 202211373362A CN 115420952 B CN115420952 B CN 115420952B
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- G01—MEASURING; TESTING
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- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
Abstract
The invention discloses a high-temperature piezoresistive property measuring platform and a high-temperature piezoresistive property measuring method, wherein the platform comprises a high-temperature-resistant piezoresistive measuring sample, a force applying device unit, a local heating unit, an electrical measuring unit, a circuit adapter plate unit and a computer control unit, wherein the force applying device unit is used for applying stress to the high-temperature-resistant piezoresistive measuring sample, the local heating unit is used for locally heating a pressure sensitive area of the high-temperature-resistant piezoresistive measuring sample, the electrical measuring unit is used for respectively measuring the resistance value change of the high-temperature-resistant piezoresistive measuring sample before and after heating and stress, the circuit adapter plate unit is used for leading out an electrical signal of the high-temperature-resistant piezoresistive measuring sample and connecting the electrical measuring unit, and the computer control unit is used for controlling the applied stress of the force applying device unit, controlling the heating temperature of the local heating unit, accurately measuring the real-time and recording the measuring result of the electrical measuring unit.
Description
Technical Field
The application relates to the technical field of electronics, in particular to a high-temperature piezoresistive characteristic measuring platform and a high-temperature piezoresistive characteristic measuring method.
Background
The piezoresistive effect is a phenomenon in which the resistivity of a solid material changes with applied force. Various electronic devices, such as semiconductor strain gauges, pressure sensitive diodes, acceleration sensors, pressure sensors, etc., have been manufactured using the piezoresistive effect of materials, and have been widely used. For semiconductor materials, the piezoresistive coefficient is not only material dependent, but also strongly related to doping concentration, axial direction, temperature, etc. Methods for measuring piezoresistive coefficients generally include a stretching method, a cantilever beam method, a four-point bending method, and the like. By using the methods, the resistivity change of the sample before and after being stressed can be measured so as to obtain the corresponding piezoresistive coefficient. Because the piezoresistive coefficient has obvious temperature dependence, the control of the temperature characteristic of the piezoresistive coefficient has important significance for researching the sensitivity thermal drift rule of the piezoresistive device and carrying out temperature drift compensation.
The force application device and the sample are placed in a high-low temperature box, and the change of the resistivity of the sample before and after stress under different temperature conditions can be measured by using a stretching method and the like, so that the corresponding piezoresistive coefficient can be obtained. The variation rule of the piezoresistive coefficient of the monocrystalline silicon at the temperature of-100 ℃ to 300 ℃ along with the temperature is obtained by people by using the method. However, it is difficult to measure the piezoresistive properties of the material at higher temperature by this method, because in the higher temperature environment, the clamping device, the force application device, and the electrical measurement device of the sample are difficult to work normally, and the sample itself cannot work normally due to the aggravation of leakage current or the structural failure of the ohmic contact electrode.
Disclosure of Invention
In order to measure the piezoresistive properties of materials in a higher temperature environment and provide experimental data for researching the temperature drift rule of a high-temperature electronic device, the embodiment of the application aims to provide a high-temperature piezoresistive property measuring platform and method aiming at the defects of the prior art.
According to the first aspect of this application embodiment, provide a high temperature piezoresistive characteristic measurement platform, including high temperature resistant piezoresistive measurement sample, force application device unit, local heating unit, electricity measuring unit, circuit keysets unit and computer control unit, the force application device unit is used for right high temperature resistant piezoresistive measurement sample applys stress, local heating unit is used for right the pressure sensitive area of high temperature resistant piezoresistive measurement sample carries out local heating, electricity measuring unit is used for measuring respectively and is heated and atress around the change of high temperature resistant piezoresistive measurement sample resistance value, circuit keysets unit be used for with the electricity signal of high temperature resistant piezoresistive measurement sample draws forth and with electricity measuring unit connects, computer control unit is used for control the applied stress of force application device unit, control the heating temperature and the real-time accurate measurement of local heating unit and record electricity measuring unit's measuring result.
Furthermore, the high-temperature-resistant piezoresistive measurement sample comprises an insulating substrate, a force-sensitive resistor, a lead and a temperature measurement element, wherein the insulating substrate is a silicon substrate with a silicon dioxide or silicon nitride insulating layer, or an insulating material or a wide bandgap material, the force-sensitive resistor is a high-temperature-resistant resistor which is manufactured on the surface of the insulating substrate by using ion implantation or bonding to manufacture a measured material, the lead is used for leading out an electrical signal of the force-sensitive resistor to a low-temperature region, and the temperature measurement element is arranged beside the force-sensitive resistor and used for measuring the temperature of the force-sensitive resistor in real time.
Further, the high temperature resistant piezoresistive measurement sample is prepared from a silicon-on-insulator material, and the preparation process comprises the following steps:
photoetching and etching a resistor pattern on the device layer of the silicon-on-insulator;
carrying out ion implantation doping on the resistance pattern to form a force-sensitive resistor;
depositing a silicon dioxide passivation layer;
photoetching the passivation layer to expose an ohmic contact area of the doped monocrystalline silicon and deposit a high-temperature-resistant ohmic contact electrode and an interconnection line;
depositing a platinum thermal resistor in a local heating area beside the force-sensitive resistor and growing a high-temperature-resistant lead, wherein the platinum thermal resistor is used as a temperature measuring element;
and thinning the back to obtain a high-temperature-resistant piezoresistive measurement sample.
Further, the force application device unit comprises a clamping module, a force application module and a signal transmission module, wherein the clamping module is used for clamping the high-temperature-resistant piezoresistive measurement sample; the force application module is used for applying stress load to the high-temperature-resistant piezoresistive measurement sample; the signal transmission module is used for being connected with the computer control unit, and the force application size and the displacement deformation generated by the stress load are accurately controlled through the computer control unit.
Further, the local heating unit comprises an alignment module, a local heat source module, and a feedback control module, wherein the alignment module is used for aligning a local heat source with the force sensitive resistor of the high temperature resistant piezoresistive measurement sample; the local heat source module is used for locally heating the force sensitive resistor of the high-temperature-resistant piezoresistive measurement sample; the feedback control module is used for adjusting the heating power of the local heat source unit according to the real-time measured temperature feedback measured by the temperature measuring element, so that the heating temperature of the force sensitive resistor of the high-temperature-resistant piezoresistive measurement sample is constant.
Furthermore, the local heat source module adopts a laser heat source, an infrared heat source or a resistance wire heat source.
Further, the electrical measurement unit comprises a constant current source and a universal meter, and is used for measuring the change of the resistance value of the high-temperature-resistant piezoresistive measurement sample before and after heating and stress.
Furthermore, the circuit adapter plate unit is positioned outside the local heat source module and connected with the electrical measurement unit by wire bonding, and an electrical signal of the high-temperature-resistant piezoresistive measurement sample is led out.
According to a second aspect of the embodiments of the present application, there is provided a high temperature piezoresistive property measurement method comprising the steps of:
building a high-temperature piezoresistive property measuring platform according to the first aspect;
starting a local heating unit through a computer control unit, wherein the local heating unit locally heats a pressure sensitive area of the high-temperature-resistant piezoresistive measurement sample to a preset temperature;
recording the initial resistance value of the material when the material is not stressed through the circuit adapter plate unit and the electrical measurement unit;
starting a force application device unit through the computer control unit, applying stress to the force sensitive resistor of the high-temperature-resistant piezoresistive measurement sample, and recording the stressed resistance value of the material through the circuit adapter plate unit and the electrical measurement unit;
and calculating the piezoresistive coefficient under the preset temperature condition according to the initial resistance value and the stressed resistance value.
The technical scheme provided by the embodiment of the application can have the following beneficial effects:
according to the embodiment, the force application device unit, the circuit adapter plate unit, the electrical measurement unit and the computer control unit are arranged in the low-temperature environment by using the local heating method, and only the force sensitive resistor part of the high-temperature-resistant piezoresistive measurement sample to be measured is arranged in the high-temperature environment, so that the failure of the force application device unit and the electrical measurement unit due to the influence of high temperature is avoided, and the method can be suitable for measuring the high-temperature piezoresistive properties of more than 300 ℃.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
Fig. 1 is a schematic structural diagram illustrating a high temperature piezoresistive property measurement platform based on a laser local heating method according to an exemplary embodiment.
FIG. 2 is a partially enlarged schematic illustration of a force sensitive resistance region of a high temperature resistant piezoresistive measurement sample, shown in accordance with an exemplary embodiment.
FIG. 3 is a flow chart illustrating a process for preparing a high temperature resistant piezoresistive measurement sample, according to an exemplary embodiment.
FIG. 4 is a schematic diagram illustrating a method of heating a force sensitive resistor based on a loop hot wire localized heating approach in accordance with an exemplary embodiment.
In the figure: 1. a high temperature resistant piezoresistive measurement sample; 2. a force application device unit; 3. a clamping module; 4. a local heating unit; 5. an alignment module; 6. a force sensitive resistor; 7. a circuit patch panel unit; 8. an electrical measurement unit; 9. a computer control unit; 10. a temperature measuring element; 11. a feedback control module; 12. a device layer; 13. an insulating layer; 14. a substrate layer; 15. a resistance pattern; 16. a passivation layer; 17. an interconnection line; 18. a platinum thermal resistance; 19. annular hot resistance wire.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
It is to be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the present application. The word "if" as used herein may be interpreted as "at" \8230; "or" when 8230; \8230; "or" in response to a determination ", depending on the context.
It should be noted that the term "high temperature" as used herein means 300 ℃.
As shown in fig. 1, the embodiment of the present application provides a high temperature piezoresistive property measurement platform, including high temperature resistant piezoresistive measurement sample 1, force application device unit 2, local heating unit 4, electricity measurement unit 8, circuit adapter plate unit 7 and computer control unit 9, force application device unit 2 is used for right high temperature resistant piezoresistive measurement sample 1 imposes stress, local heating unit 4 is used for right the pressure sensitive region of high temperature resistant piezoresistive measurement sample 1 carries out local heating, electricity measurement unit 8 is used for measuring respectively around being heated and atress high temperature resistant piezoresistive measurement sample 1 resistance value change, circuit adapter plate unit 7 is used for with the electricity signal of high temperature resistant piezoresistive measurement sample 1 draws out and with electricity measurement unit 8 is connected, computer control unit 9 is used for controlling the stress and displacement of exerting of force application device unit 2, control the heating temperature and the real-time accurate measurement of local heating unit 4 and record electricity measurement unit 8's measurement result.
According to the embodiment, the force application device unit 2, the circuit adapter plate unit 7, the electrical measurement unit 8 and the computer control unit 9 are arranged in the low-temperature environment by using the local heating method, and only the force sensitive resistor 6 of the high-temperature-resistant piezoresistive measurement sample 1 to be measured is arranged in the high-temperature environment, so that the failure of the force application device unit and the electrical measurement unit due to the influence of high temperature is avoided, and the method can be suitable for measuring the high-temperature piezoresistive properties of more than 300 ℃.
Specifically, the high-temperature-resistant piezoresistive measurement sample 1 comprises an insulating substrate, a force-sensitive resistor 6, a lead and a temperature measurement element 10, wherein the insulating substrate is a silicon substrate with a silicon dioxide or silicon nitride insulating layer 13 or an insulating material or a wide bandgap material, the force-sensitive resistor 6 is a high-temperature-resistant resistor which is manufactured on the surface of the insulating substrate through ion implantation or bonding, the lead is a conductor structure with low resistivity and small influence of stress and temperature and is used for leading out an electrical signal of the force-sensitive resistor 6 to a low-temperature region, as shown in fig. 2, the temperature measurement element 10 is arranged beside the force-sensitive resistor 6 and is used for measuring the temperature of the force-sensitive resistor 6 in real time. It should be noted that the lead structure of the lead is designed as a conventional technical means for piezoresistive coefficient measurement, and can be set according to actual conditions, which is not described herein again.
In specific implementation, the insulating substrate may be a silicon substrate with a silicon dioxide or silicon nitride insulating layer 13, or may be an insulating material such as glass or ceramic, or a wide bandgap material such as silicon carbide or gallium nitride, and the high temperature resistant piezoresistive measurement sample 1 is manufactured by using the insulating material such as silicon dioxide, silicon nitride, glass or ceramic, or the wide bandgap material such as silicon carbide or gallium nitride as the substrate, so that the influence of the aggravated failure of leakage current when the conventional silicon-based PN junction is subjected to a high temperature action is eliminated, and the high temperature measurement value of the semiconductor resistor is more accurate. By placing the temperature sensing element 10 in a localized heating zone near the force sensitive resistor 6, the temperature to the force sensitive resistor 6 can be measured accurately and in real time.
Specifically, before measurement, a high-temperature-resistant piezoresistive measurement sample 1 needs to be prepared, wherein the high-temperature-resistant piezoresistive measurement sample 1 is prepared from a silicon-on-insulator (SOI) wafer, a device layer 12 on the upper surface of the high-temperature-resistant piezoresistive measurement sample is monocrystalline silicon, an insulating layer 13 of silicon dioxide is arranged in the middle layer, and a substrate layer 14 is also monocrystalline silicon. As shown in fig. 3, the preparation process includes:
photoetching and etching a resistance pattern 15 on the device layer 12 of the silicon-on-insulator; carrying out ion implantation doping on the resistor pattern 15 to form a force-sensitive resistor 6; depositing a silicon dioxide passivation layer 16; photoetching the passivation layer 16 to expose an ohmic contact area of the doped monocrystalline silicon and deposit a high-temperature-resistant ohmic contact electrode and an interconnection line 17; depositing a platinum thermal resistor 18 near a local heating area of the force sensitive resistor 6 and growing a high-temperature-resistant lead; and thinning the back to obtain a high-temperature-resistant piezoresistive measurement sample 1.
In the present application, since the local heating unit 4 locally heats the pressure sensitive region of the high temperature-resistant piezoresistive measurement sample 1, a local heating region is formed on the high temperature-resistant piezoresistive measurement sample 1, and a low temperature region is defined on the high temperature-resistant piezoresistive measurement sample 1 without locally heating the high temperature-resistant piezoresistive measurement sample.
Specifically, the force application device unit 2 comprises a clamping module 3, a force application module and a signal transmission module, wherein the clamping module 3 is used for clamping the high-temperature-resistant piezoresistive measurement sample 1; the force application module is used for applying stress load to the high-temperature-resistant piezoresistive measurement sample 1; the signal transmission module is used for being connected with the computer control unit 9, and the force application size and the displacement deformation generated by the stress load are accurately controlled through the computer control unit 9.
Specifically, the clamping module 3 is connected to the force application module, and in one embodiment, the clamping module 3 and the force application module can be implemented by components in a push-pull force tester.
Specifically, the local heating unit 4 comprises an alignment module 5, a local heat source module, and a feedback control module 11, wherein the alignment module 5 is used for aligning a local heat source with the force sensitive resistor 6 of the high temperature resistant piezoresistive measurement sample 1; the local heat source module is used for locally heating the force sensitive resistor 6 of the high-temperature-resistant piezoresistive measurement sample 1; the feedback control module 11 is configured to adjust the heating power of the local heat source unit according to the real-time measured temperature measured by the temperature measuring element 10, so that the heated temperature of the force-sensitive resistor 6 of the high-temperature-resistant piezoresistive measurement sample 1 is constant.
In particular, the alignment module 5 may be a CMOS optical lens, a diode laser pointer. The heating power of the local heating part is fed back and adjusted in real time through the feedback control unit, the temperature is maintained to be constant, the measurement precision is high, and the feedback control unit can be a PID circuit and the like.
Specifically, the local heat source module adopts a laser heat source, an infrared heat source or a resistance wire heat source, for example, fig. 3 is a schematic diagram of locally heating the force-sensitive resistor 6 by laser, and fig. 4 is a partial schematic diagram of locally heating the force-sensitive resistor 6 by using a ring-shaped thermal resistance wire 19 as an example.
Specifically, the electrical measurement unit 8 comprises a constant current source and a multimeter, and is used for measuring the change of the resistance value of the high-temperature-resistant piezoresistive measurement sample 1 before and after being heated and stressed.
Specifically, the piezoresistive coefficient pi can be found by the following formula:
where ρ is the resistivity, π is the piezoresistive coefficient, σ is the stress
Specifically, the circuit adapter plate unit 7 is located outside the local heat source, and is connected with the electrical measurement unit 8 by wire bonding, so as to lead out the electrical signal of the high-temperature-resistant piezoresistive measurement sample 1.
In a specific implementation, the circuit adapter plate unit 7 is located outside the local heat source and has two rows of bonding pads, a typical side length dimension of the bonding pad close to one side of the high-temperature-resistant piezoresistive measurement sample 1 is hundreds of microns, and the bonding pad outside the high-temperature-resistant piezoresistive measurement sample 1 is connected with the bonding pad close to the side of the circuit adapter plate unit 7 by a gold wire bonding method; the typical side length of the bonding pad far away from one side of the high-temperature-resistant piezoresistive measurement sample 1 is millimeter level, and the wire of the electrical measurement unit 8 is connected with the bonding pad far away from the side of the circuit adapter plate unit 7 by using an electric iron and a metal wire, so that the electrical signal of the high-temperature-resistant piezoresistive measurement sample 1 is led out.
The embodiment of the application also provides a high-temperature piezoresistive property measurement method, which is applied to the high-temperature piezoresistive property measurement platform and comprises the following steps:
building the high-temperature piezoresistive property measuring platform;
starting a local heating unit 4 through a computer control unit 9, wherein the local heating unit 4 locally heats a pressure sensitive area of the high temperature resistant piezoresistive measurement sample 1 to a preset temperature;
recording the initial resistance value of the material when the material is not stressed through the circuit adapter plate unit 7 and the electrical measurement unit 8;
the force application device unit 2 is started through the computer control unit 9, stress is applied to the force sensitive resistor 6 of the high-temperature-resistant piezoresistive measurement sample 1, and the resistance value of the material after stress is recorded through the circuit adapter plate unit 7 and the electrical measurement unit 8;
and calculating the piezoresistive coefficient under the preset temperature condition according to the initial resistance value and the resistance value after stress.
In the specific implementation of the method, firstly, the high-temperature piezoresistive property measuring platform is built, namely, the high-temperature piezoresistive property measuring sample 1 is clamped by a clamping unit of a force application device; aligning the locally heated area with the back of the force-sensitive resistor 6 of the high temperature-resistant piezoresistive measurement sample 1 with the alignment unit of the local heating unit 4; the circuit adapter plate is arranged in a low-temperature area outside the local heating area, one end of the circuit adapter plate is connected with the force sensitive resistor 6 of the high-temperature-resistant piezoresistive measurement sample 1 in a lead bonding mode, and the other end of the circuit adapter plate is connected with the electrical measurement unit 8; the force application device unit 2, the electrical measurement unit 8 and the local heating unit 4 are all connected with the computer control unit 9 and are used for controlling force application and heating and recording measurement data in real time;
after the platform is built, the local heating unit 4 is started through the computer control unit 9 to locally heat the back surface of the force sensitive resistor 6 of the high-temperature-resistant piezoresistive measurement sample 1; measuring by using a temperature measuring element 10 arranged near the force-sensitive resistor 6, regulating and controlling the heating power of the local heating heat source by using a feedback control module 11 to maintain the temperature near the force-sensitive resistor 6 constant, and recording the initial resistance value of the material under the condition of no stress by using the circuit adapter plate and the electrical measurement unit 8; starting a force application device, applying stress (for example, applying 600 micro strains in one embodiment) to the force sensitive resistor 6 of the high temperature resistant piezoresistive measurement sample 1, and recording the resistance value of the stressed material through the circuit adapter plate and the electrical measurement unit 8; the piezoresistive coefficient under the temperature condition can be measured according to the resistance values of the force sensitive resistor 6 before and after being stressed.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains.
It will be understood that the present application is not limited to the precise arrangements that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof.
Claims (7)
1. The high-temperature piezoresistive property measuring platform is characterized by comprising a high-temperature-resistant piezoresistive measuring sample (1), a force applying device unit (2), a local heating unit (4), an electrical measuring unit (8), a circuit adapter plate unit (7) and a computer control unit (9), wherein the force applying device unit (2) is used for applying stress to the high-temperature-resistant piezoresistive measuring sample (1), the local heating unit (4) is used for locally heating a pressure sensitive area of the high-temperature-resistant piezoresistive measuring sample (1), the electrical measuring unit (8) is used for respectively measuring changes of resistance values of the high-temperature-resistant piezoresistive measuring sample (1) before and after heating and stress, the circuit adapter plate unit (7) is used for leading out electrical signals of the high-temperature-resistant piezoresistive measuring sample (1) and connecting with the electrical measuring unit (8), and the computer control unit (9) is used for controlling the stress applying of the force applying device unit (2), controlling the heating temperature of the local heating unit (4) and accurately measuring and recording the measuring result of the electrical measuring unit (8) in real time;
the high-temperature-resistant piezoresistive measurement sample (1) comprises an insulating substrate, a force-sensitive resistor (6), a lead and a temperature measurement element (10), wherein the insulating substrate is a silicon substrate with a silicon dioxide or silicon nitride insulating layer (13) or an insulating material or a wide bandgap material, the force-sensitive resistor (6) is a high-temperature-resistant resistor which is used for manufacturing a material to be measured on the surface of the insulating substrate through ion implantation or bonding, the lead is used for leading out an electrical signal of the force-sensitive resistor (6) to a low-temperature region, and the temperature measurement element (10) is arranged beside the force-sensitive resistor (6) and used for measuring the temperature of the force-sensitive resistor (6) in real time;
the high-temperature-resistant piezoresistive measurement sample (1) is prepared from a silicon-on-insulator material, and the preparation process comprises the following steps:
photoetching and etching a resistance pattern (15) on the silicon-on-insulator device layer (12);
carrying out ion implantation doping on the resistance pattern (15) to form a force sensitive resistor (6);
depositing a silicon dioxide passivation layer (16);
photoetching the passivation layer (16), exposing an ohmic contact area of the doped monocrystalline silicon and depositing a high-temperature-resistant ohmic contact electrode and an interconnection line (17);
depositing a platinum thermal resistor (18) in a local heating area beside the force sensitive resistor (6) and growing a high-temperature-resistant lead wire, wherein the platinum thermal resistor (18) is used as a temperature measuring element (10);
and thinning the back to obtain a high-temperature-resistant piezoresistive measurement sample (1).
2. The high temperature piezoresistive property measurement platform according to claim 1, wherein the force application device unit (2) comprises a clamping module (3), a force application module, a signal transmission module, the clamping module (3) is used for clamping the high temperature piezoresistive measurement sample (1); the force application module is used for applying stress load to the high-temperature-resistant piezoresistive measurement sample (1); the signal transmission module is used for being connected with the computer control unit (9), and the force application size and the displacement deformation generated by the stress load are accurately controlled through the computer control unit (9).
3. The high temperature piezoresistive property measurement platform according to claim 1, wherein the local heating unit (4) comprises an alignment module (5), a local heat source module, a feedback control module (11), the alignment module (5) being configured to align a local heat source with the force sensitive resistor (6) of the high temperature resistant piezoresistive measurement sample (1); the local heat source module is used for locally heating the force sensitive resistor (6) of the high-temperature-resistant piezoresistive measurement sample (1); the feedback control module (11) is used for adjusting the heating power of the local heat source module according to the real-time measured temperature feedback measured by the temperature measuring element (10), so that the heating temperature of the force sensitive resistor (6) of the high-temperature-resistant piezoresistive measurement sample (1) is constant.
4. The high temperature piezoresistive property measuring platform according to claim 3, wherein said local heat source module is a laser heat source, an infrared heat source or a resistance wire heat source.
5. The high temperature piezoresistive property measurement platform according to claim 1, wherein the electrical measurement unit (8) comprises a constant current source, a multimeter, for measuring the change in resistance of the high temperature piezoresistive measurement sample (1) before and after being heated and stressed.
6. The high temperature piezoresistive property measurement platform according to claim 1, wherein the circuit adapter board unit (7) is located outside the local heating unit (4) and connected to the electrical measurement unit (8) by wire bonding to extract the electrical signal of the high temperature piezoresistive measurement sample (1).
7. A high-temperature piezoresistive property measuring method is characterized by comprising the following steps:
building a high temperature piezoresistive property measurement platform according to any of claims 1-6;
activating a local heating unit (4) by a computer control unit (9), wherein the local heating unit (4) locally heats a pressure sensitive area of the high temperature resistant piezoresistive measurement sample (1) to a preset temperature;
recording the initial resistance value of the material when the material is not stressed through the circuit adapter plate unit (7) and the electrical measurement unit (8);
starting a force application device unit (2) through the computer control unit (9), applying stress to a force sensitive resistor (6) of the high-temperature-resistant piezoresistive measurement sample (1), and recording the stressed resistance value of the material through the circuit adapter plate unit (7) and the electrical measurement unit (8);
and calculating the piezoresistive coefficient under the preset temperature condition according to the initial resistance value and the stressed resistance value.
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