CN115404460A - One-dimensional MoS 2 Nanotube material and method for preparing same - Google Patents
One-dimensional MoS 2 Nanotube material and method for preparing same Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
The invention discloses a one-dimensional MoS 2 Nanotube material and method of making the same comprising adding MoO 3 S powder is a primary material, and the Te-assisted chemical vapor deposition method is adopted to grow MoS 2 Nanotube material, said single MoS 2 The diameter of the nano tube is 80-200 nm, and the nano tube is coated on SiO by a Te auxiliary chemical vapor deposition method 2 Growth of high-quality single crystal MoS on surface of Si substrate 2 Te powder is adopted as catalyst in the process of nanotube and Te auxiliary chemical vapor depositionThe catalyst does not need to adopt a template and a specific precursor structure design, and has the advantages of simple process, high yield and low cost, and is suitable for batch production; in SiO 2 Direct growth of MoS on Si substrate 2 The nano-tube prepared by the method has uniform shape and stable structural performance, and can be used as a channel material of a field effect transistor, a photocatalysis, an electro-catalysis, a solar cell, a flexible sensor, a field emission and lithium ion battery cathode material.
Description
Technical Field
The invention belongs to the field of nano materials, and relates to a one-dimensional MoS 2 Nanotube material and method of making the same.
Background
Due to the unique structure and the unique physical property and chemical property of the nano material, the nano material has wide application in the fields of biosensors, photocatalysis, electrochemical catalysis, material engineering, environmental engineering, energy conversion and storage, biomedicine and the like, and shows good performance. Graphene and carbon nanotubes have been studied and developed sufficiently in the past decades, but their band gap is zero and cannot be controlled, so that their application and development in the fields of logic circuits and the like are limited, and the low-dimensional transition metal chalcogenides (TMDs) of carbon nanotubes, which are similar to graphene in structure, have been recognized as a new starting material of nanomaterials, and molybdenum disulfide (MoS), which is a representative member of the TMDs family 2 ) The method has excellent performance when the dimension of the method is changed from zero dimension to three dimensions. Zero-dimensional MoS 2 I.e., quantum dots, have particular electronic and photophysical properties that depend on quantum confinement and edge effects, which make their application in bioimaging, luminescence sensing, and catalysis possible. The two-dimensional TMDs material has high carrier mobility and adjustable band gap, so that the two-dimensional TMDs material is expected to be greatly different in the next generation semiconductor process. Furthermore, three-dimensional MoS 2 The block has good application in lubrication due to the small friction coefficient. Albeit, one-dimensional MoS 2 Materials (nanobelts, nanowires, nanotubes) are of great importance in exploring a large number of new phenomena and new applications on the nanoscale, but they are not much concerned, mainly because they have certain challenges in synthesis. In 2001, moS is synthesized for a long time under the condition of ultrahigh temperature by adopting a catalytic transportation method for the first time 2 Nanotubes, but their morphologyAnd poor quality, some have also adopted the template method to perform MoS 2 The nanotube material is generated, but the process is relatively complicated, and impurity elements are easily introduced in the process of etching the template. For example, CN202011621439.8 discloses a MoS 2 The preparation method of the nanotube comprises the steps of adopting anodic aluminum oxide as a template, adopting an atomic layer deposition technology to grow molybdenum disulfide with controllable thickness on the surface of a nanopore of the anodic aluminum oxide template, and then etching away the anodic aluminum oxide by using an etching solution to obtain MoS 2 An array of nanotubes. The preparation process is relatively complicated, and H adopted in the preparation process 2 S gas is not friendly to human body and environment.
Disclosure of Invention
Aiming at the defects and shortcomings of the prior art, the invention provides a method for directly preparing SiO 2 One-dimensional MoS grown on surface of silicon (Si) by adopting chemical vapor deposition method 2 The nanotube method has simple process and environment-friendly reaction source, and the MoS prepared by the method 2 The nanotube material has uniform shape and high single crystal property, and is beneficial to excavation and research of later-period performance.
In order to solve the problems, the invention adopts the technical scheme that:
one-dimensional MoS 2 The preparation method of the nanotube material is characterized in that SiO is used 2 The method comprises the following steps of taking/Si as a substrate, and carrying out one-dimensional MoS on the silicon dioxide surface of the substrate by adopting a chemical vapor deposition method 2 Growing a nanotube material;
the reaction source of the chemical vapor deposition is a molybdenum source and a sulfur source, and the catalyst is Te powder.
Optionally, the molybdenum source is molybdenum trioxide powder; the Te powder is simple substance Te powder; the sulfur source is simple substance S powder; the dosage of the molybdenum source is 0.1-0.3mg, the content of Te powder is 0.05-0.1 mg, and the sulfur source is sufficient.
Optionally, the growth container for chemical vapor deposition is a quartz tube with openings at two ends, and the carrier gas of the quartz tube is a mixed gas of argon and hydrogen; according to the flow direction of carrier gas, a single-sealed quartz tube is arranged in the quartz tube, a sulfur source is positioned at the sealed end of the single-sealed quartz tube, and Te powder is arranged at the downstream of the sulfur sourcePlacing a quartz boat containing a molybdenum source and SiO at the open end of the single-sealed quartz tube 2 SiO of/Si substrate 2 Covering the quartz boat with the surface facing downwards; the flow rate of the carrier gas argon is 120-150 sccm, and the flow rate of the hydrogen is 15-25 sccm; the reaction temperature of the chemical vapor deposition is 750-850 ℃.
Optionally, the SiO 2 Cutting the/Si substrate into 1*1-1 x 2cm sheets, siO 2 Covering the quartz boat with molybdenum source in a downward facing mode.
Optionally, the temperature rise rate of the carrier gas is 30 ℃/min.
Optionally, the distance between the Te powder and the sulfur source is 5-7 cm.
Optionally, the growth time of the chemical vapor deposition is 5min.
One-dimensional MoS 2 The preparation method of the nanotube material specifically comprises the following steps:
(1)SiO 2 cutting the/Si substrate into regular sheets, siO 2 Covering the quartz boat with molybdenum source in a downward facing mode;
(2) The sulfur source is positioned at the sealing end of the single-sealed quartz tube, 0.05-0.1 mg of Te powder is arranged at a position 6cm away from the sulfur source, and a quartz boat containing 0.1-0.15 mg of molybdenum source is arranged at the opening end of the single-sealed quartz tube;
(3) And placing the single-seal quartz tube into a quartz tube with openings at two ends, arranging the sealing end and the opening end of the single-seal quartz tube along the flow direction of carrier gas, and performing chemical vapor deposition at 770-850 ℃.
One-dimensional MoS 2 Nanotube material, the one-dimensional MoS 2 The nano tube material adopts any one-dimensional MoS 2 The nanotube material is prepared by a preparation method.
Optionally, the one-dimensional MoS 2 The nanotube material has a length of 50-100 μm and a diameter of 80-200 nm.
The invention has the advantages that:
(1) MoS prepared by the invention 2 The nanotube material is SiO with thickness of 510 μm and thickness of oxide layer of 300nm 2 MoS grown on Si substrate 2 Nanotube and MoS 2 Nanotube parallel to SiO 2 Growth of the surface of the/Si oxide layer, moS 2 The length of the nano tubular material is 50-100 mu m, and the diameter is about 100nm; moS from microstructure 2 The nanotube is a tubular structure, the photoelectric property of the nano material is more interesting due to the introduction of the curvature effect, and the research on the basic physical properties of the material, such as the quantum confinement effect, is created due to the reduction of the dimensionality. The seed grows on SiO 2 MoS on a/Si substrate 2 The nanotube material can be directly processed into a field effect transistor for testing photoelectric properties.
(2) In the preparation of the material, the invention adopts Te auxiliary chemical vapor deposition method to prepare SiO 2 Growth of one-dimensional tubular structure MoS on/Si substrate 2 The nano material and the catalyst do not need any template and/or other complicated flows in the chemical vapor deposition process, the process is simple, the speed is high, the yield is high, the cost is low, and the method is suitable for batch production;
(3) The invention prepares the MoS with the one-dimensional tubular structure 2 In the case of a nanomaterial, H is used in comparison with most conventional preparation methods 2 S gas adopts a simple substance S which is safer and more friendly to the environment and human body.
(4) In SiO 2 One-dimensional tubular structure MoS directly grown on Si substrate 2 The nano material prepared by the method has uniform shape and good crystallinity.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure, but do not constitute a limitation of the disclosure. In the drawings:
FIG. 1 is a schematic diagram of experimental preparation of examples and comparative examples of the present invention;
FIG. 2 is an optical micrograph of example 1 of the present invention;
FIG. 3 is a TEM photograph of example 1 of the present invention;
FIG. 4 is a Raman spectrum of example 1 of the present invention;
FIG. 5 is an optical micrograph of example 2 of the present invention;
FIG. 6 is a Raman spectrum of example 2 of the present invention;
FIG. 7 is an optical micrograph of example 3 of the present invention;
FIG. 8 is a Raman spectrum of example 3 of the present invention;
FIG. 9 is an optical photograph of comparative example 1 in the present invention.
Detailed Description
In order to make the objects and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and examples, and the advantages of the present invention are shown by comparative analysis. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
One-dimensional tubular structure MoS prepared by the invention 2 The nano material is directly deposited on SiO by adopting a simple Te auxiliary chemical vapor deposition method 2 Growth of MoS on a Si substrate 2 A nanotube material. The MoS with the one-dimensional tubular structure is obtained by controlling the flow of argon and hydrogen in a reaction system, the reaction temperature, the presence or absence of a catalyst and other factors 2 The nano material and Te are used for assisting the chemical vapor deposition process without any template, so that the process is simple, the yield is high, the cost is low, and the method is suitable for batch production; moO 3 And sulfur simple substance as reaction source to grow MoS under the assistance of Te 2 Nanotube material, moS prepared therefrom 2 The nanotube material has uniform shape and good crystallinity.
The invention comprises the use of MoO 3 S powder is a primary material, and the Te auxiliary chemical vapor deposition method is adopted to grow MoS 2 Nanotube material, said single MoS 2 The diameter of the nano tube is 80-200 nm, and the nano tube is coated on SiO by a Te auxiliary chemical vapor deposition method 2 Growth of high-quality single crystal MoS on surface of Si substrate 2 The Te powder is used as a catalyst in the process of nanotube and Te auxiliary chemical vapor deposition, and a template and a specific precursor structure design are not needed, so that the method has the advantages of simple process, high yield and low cost, and is suitable for batch production; in SiO 2 Direct growth of MoS on Si substrate 2 The prepared nano material has uniform shape and stable structural performance and can be used as a field effect crystalTube channel materials, photocatalysis, electrocatalysis, solar cells, flexible sensors, field emission and lithium ion battery cathode materials.
In particular, the one-dimensional MoS of the present invention 2 Preparation method of nanotube material from SiO 2 the/Si is a substrate, and a one-dimensional hollow atomic layer MoS is carried out on the silicon dioxide surface of the substrate by adopting a chemical vapor deposition method 2 Growing the nano material; the growth container is a quartz tube, and the carrier gas of the quartz tube is the mixed gas of argon and hydrogen; according to the flow direction of carrier gas, placing a single-seal quartz tube in the quartz tube, placing a sulfur source at the bottom of the single-seal quartz tube, arranging a quartz boat containing Te powder at the downstream of the sulfur source, and placing the quartz boat containing molybdenum oxide at the port of the single-seal quartz tube; the flow rate of carrier gas argon is 50-150 sccm, and the flow rate of hydrogen is 5-30 sccm; the reaction temperature of the chemical vapor deposition is 700-850 ℃. Experiments show that by utilizing the raw materials and the process conditions provided by the invention in the experiment, the one-dimensional hollow atomic layer MoS can be obtained only under the catalytic action of Te powder 2 And (3) nano materials. While only two-dimensional MoS can be obtained on the substrate without using Te powder as a catalyst 2 Nano material without obtaining one-dimensional hollow atomic layer MoS 2 And (3) nano materials.
In the embodiments of the present disclosure, siO 2 Cutting the/Si substrate into a sheet shape of 1*1-1 x 2cm, siO 2 Covering the quartz boat with molybdenum source in a downward facing mode.
In embodiments of the present disclosure, the molybdenum source is molybdenum trioxide powder or molybdenum chloride powder, preferably molybdenum trioxide powder; the Te powder is simple substance Te powder; the sulfur source is S powder.
In the embodiment of the disclosure, the dosage of the molybdenum source is 0.1-0.3mg, the content of Te powder is 0.05-0.1 mg, and the sulfur source is sufficient.
In an embodiment of the present disclosure, the temperature rise rate of the carrier gas is 30 ℃/min.
In an embodiment of the disclosure, the Te powder and the sulfur source are 5 to 7cm apart, preferably 6cm apart.
In an embodiment of the present disclosure, the growth time of the chemical vapor deposition is 5min.
In the practice of the present disclosureIn the examples, moS 2 The length of the nano-tube is 30-100 μm, and the diameter is 80-200 nm.
The method specifically comprises the following steps:
(1)SiO 2 cutting the/Si substrate into regular sheets, siO 2 Covering the quartz boat with molybdenum source in a downward facing mode;
(2) The sulfur source is positioned at the sealing end of the single-sealing quartz tube, 0.05-0.1 mg of Te powder is arranged at a position 6cm away from the sulfur source, and a quartz boat containing 0.1-0.3 mg of molybdenum source is arranged at the opening end of the single-sealing quartz tube;
(3) And placing the single-seal quartz tube into a quartz tube with openings at two ends, arranging the sealing end and the opening end of the single-seal quartz tube along the flow direction of carrier gas, and performing chemical vapor deposition at 770-850 ℃.
One-dimensional tubular structure MoS 2 Nano material, using any one-dimensional MoS of the invention 2 The nanotube material is prepared by the preparation method. The one-dimensional MoS prepared by the invention 2 The length of the nanotube material is 30-100 μm, and the diameter is 80-200 nm.
In the following experiments, all the raw materials are commercially available and all the methods are conventional in the art unless otherwise specified.
The first embodiment is as follows:
this example shows a method for producing a SiO thin film 2 Preparation of one-dimensional tubular structure MoS on/Si substrate 2 A method of nanomaterials comprising the steps of:
the method comprises the following steps: sufficient sulfur powder was placed at the bottom of a single-sealed quartz tube having an inner diameter of 14mm and a length of 36cm, and a quartz boat holding 0.05mg of Te powder was placed at a distance of 6cm from the sulfur source.
Step two: mixing SiO 2 Cutting the/Si substrate into pieces of 1cm by 1cm and blowing clean with an air gun, siO 2 Face down on a container containing 0.1mg of MoO 3 The quartz boat of the powder is arranged at the port of the single-seal quartz tube
Step three: placing the single-sealed quartz tube in a quartz tube with an inner diameter of 44mm and a length of 140cm, and adding MoO 3 A segment of the powder is directed toward the exhaust end. Heating in the heating center of the tubular atmosphere furnace for MoS with one-dimensional tubular structure 2 Chemical vapor deposition of nanomaterials as shown in figure 1 a.
Step four: argon gas of 200sccm is introduced for 30min to thoroughly remove the residual oxygen in the tube. Then, the mixed gas of 100sccm argon and 20sccm hydrogen is continuously introduced, the tubular atmosphere furnace is heated to 770 ℃ at the heating rate of 30 ℃/min, the temperature is kept for 5min, and then the heater is closed and naturally cooled to the room temperature.
The one-dimensional tubular structure MoS obtained at this time 2 The optical photograph of the nanomaterial is shown in fig. 2. As can be seen from the optical photograph of fig. 2, the prepared material is a uniform one-dimensional nanomaterial, and as can be seen from the TEM photograph of fig. 3, the prepared material has a standard tubular structure. Raman spectra are shown in FIG. 4, with MoS at the location of interest 2 The Raman characteristic peak of (1) indicates that the prepared material is MoS 2 The length is 30-100 μm, and the diameter is 80-100 μm.
The second embodiment:
this example shows a method for producing a SiO thin film 2 Preparation of one-dimensional tubular structure MoS on/Si substrate 2 A method of nanomaterials comprising the steps of:
the method comprises the following steps: sufficient sulfur powder was placed at the bottom of a single-sealed quartz tube having an inner diameter of 14mm and a length of 36cm, and a quartz boat holding 0.05mg of Te powder was placed at a distance of 6cm from the sulfur source.
Step two: mixing SiO 2 Cutting the/Si substrate into pieces of 1cm by 1cm and blowing clean with an air gun, siO 2 Face down on the surface of the substrate and containing 0.3mgMoO 3 The quartz boat of the powder is arranged at the port of the single-seal quartz tube
Step three: the single-sealed quartz tube was placed in a quartz tube having an inner diameter of 44mm and a length of 140cm, and a section to which MoO3 powder was added was directed toward the exhaust end. Heating in the heating center of the tubular atmosphere furnace for MoS with one-dimensional tubular structure 2 Chemical vapor deposition of nanomaterials, as shown in fig. 1 a.
Step four: and introducing 200sccm of argon for 30min to completely remove residual oxygen in the tube. Then, the mixed gas of 120sccm argon and 25sccm hydrogen is continuously introduced, the tubular atmosphere furnace is heated to 770 ℃ at the heating rate of 30 ℃/min, the temperature is kept for 5min, and then the heater is closed and naturally cooled to the room temperature.
The one-dimensional tubular structure MoS obtained at this time 2 The optical photograph of the nanomaterial is shown in fig. 5. As can be seen from the comparison of fig. 5 and fig. 2, the prepared material is a uniform one-dimensional tubular nano-material. Raman spectra are shown in FIG. 6, with MoS at the location of interest 2 The Raman characteristic peak of (1) indicates that the prepared material is MoS 2 The length is 30-100 μm, and the diameter is 80-100 μm.
Example three:
this example shows a method for producing a SiO thin film 2 Preparation of one-dimensional tubular structure MoS on/Si substrate 2 A method of nanomaterials comprising the steps of:
the method comprises the following steps: sufficient sulfur powder was placed at the bottom of a single-sealed quartz tube having an inner diameter of 14mm and a length of 36cm, and a quartz boat holding 0.1mg of Te powder was placed at a distance of 6cm from the sulfur source.
Step two: mixing SiO 2 Cutting the/Si substrate into pieces of 1cm by 1cm and blowing clean with an air gun, siO 2 Face down on the surface of the substrate and containing 0.1mgMoO 3 The quartz boat of the powder is arranged at the port of the single-seal quartz tube
Step three: placing the single-sealed quartz tube in a quartz tube with an inner diameter of 44mm and a length of 140cm, and adding MoO 3 A segment of the powder is directed toward the exhaust end. Heating in the heating center of the tubular atmosphere furnace for MoS with one-dimensional tubular structure 2 Chemical vapor deposition of nanomaterials as shown in figure 1 a.
Step four: argon gas of 200sccm is introduced for 30min to thoroughly remove the residual oxygen in the tube. Then, the mixed gas of 120sccm argon and 25sccm hydrogen is continuously introduced, the tubular atmosphere furnace is heated to 850 ℃ at the heating rate of 30 ℃/min, the temperature is kept for 5min, and then the heater is closed and the tubular atmosphere furnace is naturally cooled to the room temperature.
The one-dimensional tubular structure MoS obtained at this time 2 The optical photograph of the nanomaterial is shown in fig. 7. As can be seen from comparison of fig. 7 and fig. 2, the prepared material is a uniform one-dimensional tubular nanomaterial. Raman spectra are shown in FIG. 8, with MoS at the measured location 2 Indicating that the prepared material isMoS 2 The length is 30-100 μm, and the diameter is 80-100 μm.
Comparative example one:
this comparative example gives a method for preparing a material without using Te powder as a catalyst, comprising the steps of:
the method comprises the following steps: enough sulfur powder is placed at the bottom of a single-sealed quartz tube with the inner diameter of 14mm and the length of 36 cm.
Step two: mixing SiO 2 Cutting the/Si substrate into pieces of 1cm by 1cm and blowing clean with an air gun, siO 2 Face down on the surface of the substrate and containing 0.1mgMoO 3 The quartz boat of the powder is arranged at the port of the single-seal quartz tube.
Step three: placing the single-sealed quartz tube in a quartz tube with an inner diameter of 44mm and a length of 140cm, and adding MoO 3 A segment of the powder is directed toward the exhaust end. Heating in the heating center of the tubular atmosphere furnace for MoS with one-dimensional tubular structure 2 Chemical vapor deposition of nanomaterials, as shown in fig. 1 b.
Step four: argon gas of 200sccm is introduced for 30min to thoroughly remove the residual oxygen in the tube. And then continuously introducing a mixed gas of 120sccm argon and 25sccm hydrogen, heating the tubular atmosphere furnace to 770 ℃ at the heating rate of 30 ℃/min, preserving the heat for 5min, then closing the heater, and naturally cooling to room temperature. MoS obtained at this time 2 The optical photograph of the nanomaterial is shown in fig. 9. As can be seen from a comparison of fig. 9 and fig. 2, the material produced is not a one-dimensional material.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and amendments can be made without departing from the principle of the present invention, and these modifications and amendments should also be considered as the protection scope of the present invention.
Claims (10)
1. One-dimensional MoS 2 The preparation method of the nanotube material is characterized in that SiO is used 2 The method comprises the following steps of taking/Si as a substrate, and carrying out one-dimensional MoS on the silicon dioxide surface of the substrate by adopting a chemical vapor deposition method 2 Growing a nanotube material;
the reaction source of chemical vapor deposition is molybdenum source and sulfur source, and the catalyst is Te powder.
2. The one-dimensional MoS of claim 1 2 The preparation method of the nanotube material is characterized in that the molybdenum source is molybdenum trioxide powder; the Te powder is simple substance Te powder; the sulfur source is elemental S powder;
the dosage of the molybdenum source is 0.1-0.3mg, the content of Te powder is 0.05-0.1 mg, and the sulfur source is sufficient.
3. The one-dimensional MoS of claim 1 or 2 2 The preparation method of the nanotube material is characterized in that the growth container of the chemical vapor deposition is a quartz tube with openings at two ends, and the carrier gas of the quartz tube is the mixed gas of argon and hydrogen;
according to the flow direction of carrier gas, a single-sealed quartz tube is arranged in the quartz tube, a sulfur source is positioned at the sealed end of the single-sealed quartz tube, te powder is arranged at the downstream of the sulfur source, a quartz boat containing a molybdenum source and SiO are arranged at the open end of the single-sealed quartz tube 2 SiO of/Si substrate 2 Covering the quartz boat with the surface facing downwards;
the flow rate of the carrier gas argon is 120-150 sccm, and the flow rate of the hydrogen is 15-25 sccm; the reaction temperature of the chemical vapor deposition is 750-850 ℃.
4. The one-dimensional MoS of claim 3 2 The preparation method of the nanotube material is characterized in that the SiO 2 Cutting the/Si substrate into 1*1-1 x 2cm sheets, siO 2 Face down on a quartz boat containing a molybdenum source.
5. The one-dimensional MoS of claim 3 2 The preparation method of the nanotube material is characterized in that the temperature rise rate of the carrier gas is 30 ℃/min.
6. The one-dimensional MoS of claim 1 or 2 2 The preparation method of the nanotube material is characterized in that the distance between the Te powder and the sulfur source is 5 DEG～7cm。
7. The one-dimensional MoS of claim 1 or 2 2 The preparation method of the nanotube material is characterized in that the growth time of the chemical vapor deposition is 5min.
8. One-dimensional MoS 2 The preparation method of the nanotube material is characterized by specifically comprising the following steps:
(1)SiO 2 cutting the Si substrate into regular sheets, siO 2 Covering the quartz boat with molybdenum source in a downward facing mode;
(2) The sulfur source is positioned at the sealing end of the single-sealed quartz tube, 0.05-0.1 mg of Te powder is arranged at a position 6cm away from the sulfur source, and a quartz boat containing 0.1-0.15 mg of molybdenum source is arranged at the opening end of the single-sealed quartz tube;
(3) And placing the single-seal quartz tube into a quartz tube with openings at two ends, arranging the sealing end and the opening end of the single-seal quartz tube along the flow direction of carrier gas, and performing chemical vapor deposition at 770-850 ℃.
9. One-dimensional MoS 2 Nanotube material, characterized in that the one-dimensional MoS 2 The nanotube material is one-dimensional MoS as defined in any of claims 1-8 2 The nanotube material is prepared by a preparation method.
10. The one-dimensional MoS of claim 9 2 Nanotube material characterized by said one-dimensional MoS 2 The nanotube material has a length of 50-100 μm and a diameter of 80-200 nm.
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