CN115394756A - 具有电压检测功能的功率半导体器件 - Google Patents
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Abstract
本发明提供具有电压检测功能的功率半导体器件，包括：集成在同一衬底上的功率IGBT器件、过渡区器件和IGBT电压检测器件；可以通过检测电压引出端得到与功率IGBT器件集电极电压变化趋势相同的电压，及时反馈，且不用额外增加器件的面积。采用与器件同一套工艺流程集成电压检测结构，电压检测结构与原器件的兼容性好，不需要额外的电压检测电路，能减小整体面积，降低功耗成本。同时，集成在IGBT电压检测器件区的电压检测电容与寄生电容并联能够保证采样点电压更低，兼容更低压的模拟控制电路对采样信号进行处理，进一步优化了设计成本和器件兼容性。
Description
技术领域
本发明属于功率半导体器件领域，具体是具有电压检测功能的功率半导体器件结构。
背景技术
功率半导体器件是半导体领域的重要研究内容之一，主要应用于现代电子***的功率处理单元，是当今消费类电子、工业控制和国防装备等领域中的关键技术之一。功率驱动相关的高压、功率集成电路和***中，都需要对高压、功率集成电路输入/输出性能和负载情况等进行检测，做到对电路和***的实时保护，满足集成电路和***的智能化，有效地保证***正常和可靠地工作。
功率半导体器件在实际应用中面临诸多失效情况，如感性负载引起关断瞬态的电压过冲风险等。模块中器件的损坏将直接影响电路***的可靠性与稳定性。传统电压检测技术主要是通过***元器件实现的，这些元器件可能存在与主要器件的兼容性较差，制作成本增加、应用电路体积大、电压检测跟随性差等问题。
基于此，本发明提供了具有电压检测功能的功率半导体器件，以解决电压检测困难的问题。
发明内容
本发明的目的是提出一种具有电压检测功能的功率半导体器件，可以得到与器件集电极电压变化趋势相同的电压，及时反馈，且不额外增加器件的面积。采用与器件同一套工艺流程集成电压检测结构，电压检测结构与原器件的兼容性好，不需要额外的电压检测电路，能减小整体面积，降低功耗成本。同时，集成IGBT电压检测器件区的电压检测电容与寄生电容并联能够保证采样点电压更低，兼容更低压的模拟控制电路对采样信号进行处理，进一步优化了设计成本和器件兼容性。
为实现上述发明目的，本发明技术方案如下：
具有电压检测功能的功率半导体器件，包括：集成在同一衬底上的功率IGBT器件100)、过渡区器件200和IGBT电压检测器件300；
所述功率IGBT器件100包括：P型半导体衬底1、位于所述P型衬底下方的集电极15、位于所述P型衬底上方的N型场阻止层2、位于所述N型场阻止层2上方的N型漂移区3；在所述N型漂移区3上方设置的一个沟槽；所述沟槽两侧分别有P型半导体体区4和浮空P型基区10；所述P型半导体体区4上方设有N型半导体发射区5和P型半导体欧姆接触区6；所述N型半导体发射区5与所述沟槽侧面接触；所述P型半导体欧姆接触区6与所述N型半导体发射区5远离所述沟槽的侧面接触，且不与沟槽接触；所述P型半导体欧姆接触区6的上表面和所述N型半导体发射区5的上表面平齐；氧化层7覆盖在所述N型半导体发射区5和所述浮空P型基区10上；发射极11覆盖所述P型半导体欧姆接触区6、氧化层7和N型半导体发射区5上；所述沟槽内设置有氧化层7、功率IGBT器件栅电极108和功率IGBT器件屏蔽栅109；功率IGBT器件栅电极108和功率IGBT器件屏蔽栅109在沟槽中且通过所述氧化层7相互隔离；所述功率IGBT器件栅电极108和功率IGBT器件屏蔽栅109的上表面齐平且高于所述P型半导体欧姆接触区6与所述N型半导体发射区5的下表面；所述功率IGBT器件栅电极108和功率IGBT器件屏蔽栅109的下表面平齐且高于浮空P型基区10的下表面；所述功率IGBT器件栅电极108和功率IGBT器件屏蔽栅109的下表面低于所述P型半导体体区4的下表面；
所述过渡区器件200包括：P型半导体衬底1、位于所述P型衬底下方的集电极15、位于所述P型衬底上方的N型场阻止层2、位于所述N型场阻止层2上方的N型漂移区3；在所述N型漂移区3上方设置的一个沟槽；所述沟槽两侧分别有P型半导体体区4和浮空P型基区10；氧化层7覆盖在所述P型半导体体区4和所述浮空P型基区10上；发射极11覆盖在所述P型半导体体区4、氧化层7上；所述沟槽内设置有氧化层7、过渡区器件栅电极208和过渡区器件屏蔽栅209；所述过渡区器件栅电极208和过渡区器件屏蔽栅209在沟槽中且通过所述氧化层7相互隔离；所述过渡区器件栅电极208和过渡区器件屏蔽栅209的上表面齐平；所述过渡区器件栅电极208和过渡区器件屏蔽栅209的下表面平齐且高于浮空P型基区10的下表面；所述过渡区器件栅电极208和过渡区器件屏蔽栅209的下表面低于所述P型半导体体区4的下表面；
所述IGBT电压检测器件300包括：P型半导体衬底1、位于所述P型衬底下方的集电极15、位于所述P型衬底上方的N型场阻止层2、位于所述N型场阻止层2上方的N型漂移区3；在所述N型漂移区3上方设置的一个沟槽；所述沟槽两侧分别有P型半导体体区4和浮空P型基区10；所述浮空P型基区10上方设有一个电压检测电容；所述电压检测电容由氧化层7、电压检测电容上极板14、多晶硅电压检测电容下极板12构成；所述电压检测电容上极板14和多晶硅电压检测电容下极板12位于氧化层7内部，所述电压检测电容上极板14与多晶硅电压检测电容下极板12通过氧化层7隔离；所述多晶硅电压检测电容下极板12与浮空P型基区10通过所述氧化层7相互隔离；检测电压引出端13覆盖在IGBT电压检测器件屏蔽栅309、多晶硅电压检测电容下极板12和所述氧化层7上；所述氧化层7覆盖在所述P型半导体体区4和电压检测电容上极板14上；发射极11覆盖在所述P型半导体体区4上；所述沟槽内设置有氧化层7、IGBT电压检测器件栅电极308和IGBT电压检测器件屏蔽栅309；所述IGBT电压检测器件栅电极308和IGBT电压检测器件屏蔽栅309在沟槽中且通过所述氧化层7相互隔离；所述IGBT电压检测器件栅电极308和IGBT电压检测器件屏蔽栅309的下表面平齐且高于浮空P型基区10的下表面；所述IGBT电压检测器件栅电极308和IGBT电压检测器件屏蔽栅309的下表面低于所述P型半导体体区4的下表面。
作为优选方式，所述功率IGBT器件的集电极15、过渡区器件的集电极15与IGBT电压检测器件的集电极15相连接；所述功率IGBT器件栅极108、过渡区器件栅极208与IGBT电压检测器件栅极308相连接；所述功率IGBT器件的发射极11与过渡区器件的发射极11相连接；所述功率IGBT器件的发射极11、过渡区器件的发射极11与所述IGBT电压检测器件的发射极11电学上相连，但版图上不相连；所述IGBT电压检测器件的发射极11和电压检测电容上极板14相连接；所述功率IGBT器件屏蔽栅109、过渡区器件屏蔽栅209相连接；所述IGBT电压检测器件屏蔽栅极309、所述多晶硅电压检测电容下极板12通过检测电压引出端13相连接。
作为优选方式，通过所述IGBT电压检测器件的检测电压引出端13可以得到与所述功率IGBT器件集电极15电压变化趋势相同的检测电压，通过调整所述电压检测电容上极板与多晶硅电压检测电容下极板的间距、或者电压检测电容上极板与多晶硅电压检测电容下极板的面积，可以调整所述电压检测电容的大小，进而得到不同的检测电压。
作为优选方式，所有P型与N型导电类型区互换。
作为优选方式，器件所用半导体的材料为单晶硅、碳化硅或者氮化镓。
作为优选方式，所述检测电压引出端13采用多种功函数的金属实现。
与现有技术相比，本发明的有益效果为：
本发明提出了一种具有电压检测功能的功率半导体器件，可以得到与功率IGBT器件集电极电压变化趋势相同的电压，及时反馈，且不用额外增加器件的面积。采用与器件同一套工艺流程集成电压检测结构，电压检测结构与原器件的兼容性好，不需要额外的电压检测电路，能减小整体面积，降低功耗成本。同时，集成在IGBT电压检测器件区的电压检测电容与寄生电容并联能够保证采样点电压更低，兼容更低压的模拟控制电路对采样信号进行处理，进一步优化了设计成本和器件兼容性。
附图说明
图1为本发明提出的具有电压检测功能的功率半导体器件结构示意图。
图2为本发明提出的具有电压检测功能的功率半导体器件结构的功率IGBT器件结构示意图。
图3为本发明提出的具有电压检测功能的功率半导体器件结构的过渡区器件结构示意图。
图4为本发明提出的具有电压检测功能的功率半导体器件结构的IGBT电压检测器件结构示意图。
图5为本发明提出的具有电压检测功能的功率半导体器件结构的版图结构示意图。
图6为本发明提出的具有电压检测功能的功率半导体器件结构的电压检测原理示意图。
其中左图为器件寄生电容示意图，右图为寄生电容的等效电路图。
100为功率IGBT器件，200为过渡区器件，300为IGBT电压检测器件，400为Gate Pad区，1为P型半导体衬底，2为N型场阻止层，3为N型漂移区，4为P型半导体体区，5为N型半导体发射区，6为P型半导体欧姆接触区，7为氧化层，108为功率IGBT器件栅电极，208为过渡区器件栅电极，308为IGBT电压检测器件栅电极，109为功率IGBT器件屏蔽栅，209为过渡区器件屏蔽栅，309为IGBT电压检测器件屏蔽栅，10为浮空P型基区，11为发射极，12为多晶硅电压检测电容下极板，13为检测电压引出端，14为电压检测电容上极板，15为集电极。
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
图1为本发明提出的具有电压检测功能的功率半导体器件结构示意图，包括：
集成在同一衬底上的功率IGBT器件100、过渡区器件200和IGBT电压检测器件300；
所述功率IGBT器件的集电极15、过渡区器件的集电极15与IGBT电压检测器件的集电极15相连接；所述功率IGBT器件栅极108、过渡区器件栅极208与IGBT电压检测器件栅极308相连接；所述功率IGBT器件的发射极11与过渡区器件的发射极11相连接；所述功率IGBT器件的发射极11、过渡区器件的发射极11与所述IGBT电压检测器件的发射极11电学上相连，但版图上不相连；所述IGBT电压检测器件的发射极11和电压检测电容上极板14相连接；所述功率IGBT器件屏蔽栅109、过渡区器件屏蔽栅209相连接；所述IGBT电压检测器件屏蔽栅极309、所述多晶硅电压检测电容下极板12通过检测电压引出端13相连接。
图2为本发明提出的具有电压检测功能的功率半导体器件结构中功率IGBT器件结构示意图，包括：
所述IGBT电压检测器件300包括：P型半导体衬底1、位于所述P型衬底下方的集电极15、位于所述P型衬底上方的N型场阻止层2、位于所述N型场阻止层2上方的N型漂移区3；在所述N型漂移区3上方设置的一个沟槽；所述沟槽两侧分别有P型半导体体区4和浮空P型基区10；所述浮空P型基区10上方设有一个电压检测电容；所述电压检测电容由氧化层7、电压检测电容上极板14、多晶硅电压检测电容下极板12构成；所述电压检测电容上极板14和多晶硅电压检测电容下极板12位于氧化层7内部，所述电压检测电容上极板14与多晶硅电压检测电容下极板12通过氧化层7隔离；所述多晶硅电压检测电容下极板12与浮空P型基区10通过所述氧化层7相互隔离；检测电压引出端13覆盖在IGBT电压检测器件屏蔽栅309、多晶硅电压检测电容下极板12和所述氧化层7上；所述氧化层7覆盖在所述P型半导体体区4和电压检测电容上极板14上；发射极11覆盖在所述P型半导体体区4上；所述沟槽内设置有氧化层7、IGBT电压检测器件栅电极308和IGBT电压检测器件屏蔽栅309；所述IGBT电压检测器件栅电极308和IGBT电压检测器件屏蔽栅309在沟槽中且通过所述氧化层7相互隔离；所述IGBT电压检测器件栅电极308和IGBT电压检测器件屏蔽栅309的下表面平齐且高于浮空P型基区10的下表面；所述IGBT电压检测器件栅电极308和IGBT电压检测器件屏蔽栅309的下表面低于所述P型半导体体区4的下表面。
图3为本发明提出的具有电压检测功能的功率半导体器件结构中过渡区器件结构示意图，包括：
所述过渡区器件200包括：P型半导体衬底1、位于所述P型衬底下方的集电极15、位于所述P型衬底上方的N型场阻止层2、位于所述N型场阻止层2上方的N型漂移区3；在所述N型漂移区3上方设置的一个沟槽；所述沟槽两侧分别有P型半导体体区4和浮空P型基区10；氧化层7覆盖在所述P型半导体体区4和所述浮空P型基区10上；发射极11覆盖在所述P型半导体体区4、氧化层7上；所述沟槽内设置有氧化层7、过渡区器件栅电极208和过渡区器件屏蔽栅209；所述过渡区器件栅电极208和过渡区器件屏蔽栅209在沟槽中且通过所述氧化层7相互隔离；所述过渡区器件栅电极208和过渡区器件屏蔽栅209的上表面齐平；所述过渡区器件栅电极208和过渡区器件屏蔽栅209的下表面平齐且高于浮空P型基区10的下表面；所述过渡区器件栅电极208和过渡区器件屏蔽栅209的下表面低于所述P型半导体体区4的下表面；
图4为本发明提出的具有电压检测功能的功率半导体器件结构中IGBT电压检测器件结构示意图，包括：
所述功率IGBT器件100包括：P型半导体衬底1、位于所述P型衬底下方的集电极15、位于所述P型衬底上方的N型场阻止层2、位于所述N型场阻止层2上方的N型漂移区3；在所述N型漂移区3上方设置的一个沟槽；所述沟槽两侧分别有P型半导体体区4和浮空P型基区10；所述P型半导体体区4上方设有N型半导体发射区5和P型半导体欧姆接触区6；所述N型半导体发射区5与所述沟槽侧面接触；所述P型半导体欧姆接触区6与所述N型半导体发射区5远离所述沟槽的侧面接触，且不与沟槽接触；所述P型半导体欧姆接触区6的上表面和所述N型半导体发射区5的上表面平齐；氧化层7覆盖在所述N型半导体发射区5和所述浮空P型基区10上；发射极11覆盖所述P型半导体欧姆接触区6、氧化层7和N型半导体发射区5上；所述沟槽内设置有氧化层7、功率IGBT器件栅电极108和功率IGBT器件屏蔽栅109；功率IGBT器件栅电极108和功率IGBT器件屏蔽栅109在沟槽中且通过所述氧化层7相互隔离；所述功率IGBT器件栅电极108和功率IGBT器件屏蔽栅109的上表面齐平且高于所述P型半导体欧姆接触区6与所述N型半导体发射区5的下表面；所述功率IGBT器件栅电极108和功率IGBT器件屏蔽栅109的下表面平齐且高于浮空P型基区10的下表面；所述功率IGBT器件栅电极108和功率IGBT器件屏蔽栅109的下表面低于所述P型半导体体区4的下表面；
图5为本发明提出的具有电压检测功能的功率半导体器件结构的版图结构示意图，包括：
功率IGBT器件100、过渡区器件200、IGBT电压检测器件300和栅极焊盘Gate Pad区400。功率IGBT器件100的面积占大部分器件总面积，可以有效保证器件的功率需求，所述功率IGBT器件100与IGBT电压检测器件300由过渡区器件200隔开，位于器件的边缘，且仅占用很小的器件面积，可以保证不影响功率IGBT器件区正常工作且具有较高集成度。
图6为本发明提出的具有电压检测功能的功率半导体器件结构的电压检测原理示意图，包括：
IGBT电压检测器件屏蔽栅309与集电极15之间存在电容Csgc1；电压检测电容下极板与集电极15之间存在电容Csgc2；IGBT电压检测器件屏蔽栅309与IGBT电压检测器件栅电极308之间存在电容Csgg；IGBT电压检测器件屏蔽栅309与发射极11之间存在电容Csge；电压检测电容Cc集成在IGBT电压检测器件上。在检测电压引出端可以获得所述功率IGBT器件集电极15电压变化趋势相同的检测电压。通过调整电压检测电容Cc大小控制得到的检测电压大小。减小电压检测电容上极板与多晶硅电压检测电容下极板的间距或者增大电压检测电容上极板与多晶硅电压检测电容下极板的面积，电压检测电容Cc增大，得到的检测电压减小；增大电压检测电容上极板与多晶硅电压检测电容下极板的间距或者减小电压检测电容上极板与多晶硅电压检测电容下极板的面积，电压检测电容Cc减小，得到的检测电压减小。同时，电压检测电容Cc与寄生电容并联能够保证采样点电压更低，兼容更低压的模拟控制电路对采样信号进行处理，进一步优化了设计成本和器件兼容性。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。
Claims (6)
1.具有电压检测功能的功率半导体器件，其特征在于包括：集成在同一衬底上的功率IGBT器件(100)、过渡区器件(200)和IGBT电压检测器件(300)；
所述功率IGBT器件(100)包括：P型半导体衬底(1)、位于所述P型衬底下方的集电极(15)、位于所述P型衬底上方的N型场阻止层(2)、位于所述N型场阻止层(2)上方的N型漂移区(3)；在所述N型漂移区(3)上方设置的一个沟槽；所述沟槽两侧分别有P型半导体体区(4)和浮空P型基区(10)；所述P型半导体体区(4)上方设有N型半导体发射区(5)和P型半导体欧姆接触区(6)；所述N型半导体发射区(5)与所述沟槽侧面接触；所述P型半导体欧姆接触区(6)与所述N型半导体发射区(5)远离所述沟槽的侧面接触，且不与沟槽接触；所述P型半导体欧姆接触区(6)的上表面和所述N型半导体发射区(5)的上表面平齐；氧化层(7)覆盖在所述N型半导体发射区(5)和所述浮空P型基区(10)上；发射极(11)覆盖所述P型半导体欧姆接触区(6)、氧化层(7)和N型半导体发射区(5)上；所述沟槽内设置有氧化层(7)、功率IGBT器件栅电极(108)和功率IGBT器件屏蔽栅(109)；功率IGBT器件栅电极(108)和功率IGBT器件屏蔽栅(109)在沟槽中且通过所述氧化层(7)相互隔离；所述功率IGBT器件栅电极(108)和功率IGBT器件屏蔽栅(109)的上表面齐平且高于所述P型半导体欧姆接触区(6)与所述N型半导体发射区(5)的下表面；所述功率IGBT器件栅电极(108)和功率IGBT器件屏蔽栅(109)的下表面平齐且高于浮空P型基区(10)的下表面；所述功率IGBT器件栅电极(108)和功率IGBT器件屏蔽栅(109)的下表面低于所述P型半导体体区(4)的下表面；
所述过渡区器件(200)包括：P型半导体衬底(1)、位于所述P型衬底下方的集电极(15)、位于所述P型衬底上方的N型场阻止层(2)、位于所述N型场阻止层(2)上方的N型漂移区(3)；在所述N型漂移区(3)上方设置的一个沟槽；所述沟槽两侧分别有P型半导体体区(4)和浮空P型基区(10)；氧化层(7)覆盖在所述P型半导体体区(4)和所述浮空P型基区(10)上；发射极(11)覆盖在所述P型半导体体区(4)、氧化层(7)上；所述沟槽内设置有氧化层(7)、过渡区器件栅电极(208)和过渡区器件屏蔽栅(209)；所述过渡区器件栅电极(208)和过渡区器件屏蔽栅(209)在沟槽中且通过所述氧化层(7)相互隔离；所述过渡区器件栅电极(208)和过渡区器件屏蔽栅(209)的上表面齐平；所述过渡区器件栅电极(208)和过渡区器件屏蔽栅(209)的下表面平齐且高于浮空P型基区(10)的下表面；所述过渡区器件栅电极(208)和过渡区器件屏蔽栅(209)的下表面低于所述P型半导体体区(4)的下表面；
所述IGBT电压检测器件(300)包括：P型半导体衬底(1)、位于所述P型衬底下方的集电极(15)、位于所述P型衬底上方的N型场阻止层(2)、位于所述N型场阻止层(2)上方的N型漂移区(3)；在所述N型漂移区(3)上方设置的一个沟槽；所述沟槽两侧分别有P型半导体体区(4)和浮空P型基区(10)；所述浮空P型基区(10)上方设有一个电压检测电容；所述电压检测电容由氧化层(7)、电压检测电容上极板(14)、多晶硅电压检测电容下极板(12)构成；所述电压检测电容上极板(14)和多晶硅电压检测电容下极板(12)位于氧化层(7)内部，所述电压检测电容上极板(14)与多晶硅电压检测电容下极板(12)通过氧化层(7)隔离；所述多晶硅电压检测电容下极板(12)与浮空P型基区(10)通过所述氧化层(7)相互隔离；检测电压引出端(13)覆盖在IGBT电压检测器件屏蔽栅(309)、多晶硅电压检测电容下极板(12)和所述氧化层(7)上；所述氧化层(7)覆盖在所述P型半导体体区(4)和电压检测电容上极板(14)上；发射极(11)覆盖在所述P型半导体体区(4)上；所述沟槽内设置有氧化层(7)、IGBT电压检测器件栅电极(308)和IGBT电压检测器件屏蔽栅(309)；所述IGBT电压检测器件栅电极(308)和IGBT电压检测器件屏蔽栅(309)在沟槽中且通过所述氧化层(7)相互隔离；所述IGBT电压检测器件栅电极(308)和IGBT电压检测器件屏蔽栅(309)的下表面平齐且高于浮空P型基区(10)的下表面；所述IGBT电压检测器件栅电极(308)和IGBT电压检测器件屏蔽栅(309)的下表面低于所述P型半导体体区(4)的下表面。
2.根据权利要求1所述的具有电压检测功能的功率半导体器件，其特征在于：所述功率IGBT器件的集电极(15)、过渡区器件的集电极(15)与IGBT电压检测器件的集电极(15)相连接；所述功率IGBT器件栅极(108)、过渡区器件栅极(208)与IGBT电压检测器件栅极(308)相连接；所述功率IGBT器件的发射极(11)与过渡区器件的发射极(11)相连接；所述功率IGBT器件的发射极(11)、过渡区器件的发射极(11)与所述IGBT电压检测器件的发射极(11)电学上相连，但版图上不相连；所述IGBT电压检测器件的发射极(11)和电压检测电容上极板(14)相连接；所述功率IGBT器件屏蔽栅(109)、过渡区器件屏蔽栅(209)相连接；所述IGBT电压检测器件屏蔽栅极(309)、所述多晶硅电压检测电容下极板(12)通过检测电压引出端(13)相连接。
3.根据权利要求1所述的具有电压检测功能的功率半导体器件，其特征在于：通过所述IGBT电压检测器件的检测电压引出端(13)可以得到与所述功率IGBT器件集电极(15)电压变化趋势相同的检测电压，通过调整所述电压检测电容上极板与多晶硅电压检测电容下极板的间距、或者电压检测电容上极板与多晶硅电压检测电容下极板的面积，可以调整所述电压检测电容的大小，进而得到不同的检测电压。
4.根据权利要求1至3任意一项所述的具有电压检测功能的功率半导体器件，其特征在于：所有P型与N型导电类型区互换。
5.根据权利要求1所述的具有电压检测功能的功率半导体器件，其特征在于：器件所用半导体的材料为单晶硅、碳化硅或者氮化镓。
6.根据权利要求1所述的具有电压检测功能的功率半导体器件，其特征在于：所述检测电压引出端(13)采用多种功函数的金属实现。
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