CN115394756A - Power semiconductor device with voltage detection function - Google Patents

Power semiconductor device with voltage detection function Download PDF

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Publication number
CN115394756A
CN115394756A CN202211052581.4A CN202211052581A CN115394756A CN 115394756 A CN115394756 A CN 115394756A CN 202211052581 A CN202211052581 A CN 202211052581A CN 115394756 A CN115394756 A CN 115394756A
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voltage detection
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igbt
type
type semiconductor
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李泽宏
杨洋
赵一尚
黄龄萱
夏梓铭
王彤阳
刘小菡
陈雨佳
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0084—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

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  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • General Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The invention provides a power semiconductor device with a voltage detection function, comprising: the power IGBT device, the transition region device and the IGBT voltage detection device are integrated on the same substrate; the voltage which has the same change trend with the collector voltage of the power IGBT device can be obtained by detecting the voltage leading-out end, the feedback is carried out in time, and the area of the device does not need to be additionally increased. The voltage detection structure is integrated with the same process flow of the device, the voltage detection structure is good in compatibility with the original device, an additional voltage detection circuit is not needed, the whole area can be reduced, and the power consumption cost is reduced. Meanwhile, the voltage detection capacitor integrated in the IGBT voltage detection device area is connected in parallel with the parasitic capacitor, so that the sampling point voltage is lower, the analog control circuit compatible with lower voltage is used for processing the sampling signal, and the design cost and the device compatibility are further optimized.

Description

Power semiconductor device with voltage detection function
Technical Field
The invention belongs to the field of power semiconductor devices, and particularly relates to a power semiconductor device structure with a voltage detection function.
Background
The power semiconductor device is one of important research contents in the semiconductor field, is mainly applied to a power processing unit of a modern electronic system, and is one of key technologies in the fields of current consumer electronics, industrial control, national defense equipment and the like. In the high-voltage and power integrated circuits and systems related to power driving, the input/output performance, the load condition and the like of the high-voltage and power integrated circuits need to be detected, so that the circuits and the systems are protected in real time, the intellectualization of the integrated circuits and the systems is met, and the normal and reliable work of the systems is effectively ensured.
In practical applications, power semiconductor devices are subject to many failure conditions, such as the risk of voltage overshoot caused by an inductive load in a turn-off transient. Damage to devices in the module will directly affect the reliability and stability of the circuitry. The traditional voltage detection technology is mainly realized through peripheral components, and the components have the problems of poor compatibility with main components, increased manufacturing cost, large size of an application circuit, poor voltage detection following performance and the like.
Based on this, the invention provides a power semiconductor device with a voltage detection function to solve the problem of difficult voltage detection.
Disclosure of Invention
The invention aims to provide a power semiconductor device with a voltage detection function, which can obtain voltage with the same change trend as the voltage of a collector of the device, feed back the voltage in time and does not increase the area of the device additionally. The voltage detection structure is integrated with the same process flow of the device, the voltage detection structure is good in compatibility with the original device, an additional voltage detection circuit is not needed, the whole area can be reduced, and the power consumption cost is reduced. Meanwhile, the voltage detection capacitor of the integrated IGBT voltage detection device area is connected in parallel with the parasitic capacitor, so that the sampling point voltage is lower, the sampling signal is processed by the analog control circuit compatible with lower voltage, and the design cost and the device compatibility are further optimized.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a power semiconductor device having a voltage detection function includes: a power IGBT device 100), a transition region device 200, and an IGBT voltage detection device 300 integrated on the same substrate;
the power IGBT device 100 includes: the field effect transistor comprises a P-type semiconductor substrate 1, a collector 15 positioned below the P-type substrate, an N-type field stop layer 2 positioned above the P-type substrate, and an N-type drift region 3 positioned above the N-type field stop layer 2; a trench disposed above the N-type drift region 3; a P-type semiconductor body region 4 and a floating P-type base region 10 are respectively arranged on two sides of the trench; an N-type semiconductor emitter region 5 and a P-type semiconductor ohmic contact region 6 are arranged above the P-type semiconductor body region 4; the N-type semiconductor emitter region 5 is in contact with the side face of the groove; the P-type semiconductor ohmic contact region 6 is in contact with the side face, away from the groove, of the N-type semiconductor emitting region 5, and is not in contact with the groove; the upper surface of the P-type semiconductor ohmic contact region 6 is flush with the upper surface of the N-type semiconductor emitter region 5; the oxide layer 7 covers the N-type semiconductor emitter region 5 and the floating P-type base region 10; the emitter 11 covers the P-type semiconductor ohmic contact region 6, the oxide layer 7 and the N-type semiconductor emitter region 5; an oxide layer 7, a power IGBT device gate electrode 108 and a power IGBT device shielding gate 109 are arranged in the groove; the gate electrode 108 of the power IGBT device and the shielding gate 109 of the power IGBT device are arranged in the groove and are mutually isolated through the oxide layer 7; the upper surfaces of the gate electrode 108 and the shielding gate 109 of the power IGBT device are flush and higher than the lower surfaces of the P-type semiconductor ohmic contact region 6 and the N-type semiconductor emitter region 5; the lower surfaces of the gate electrode 108 of the power IGBT device and the shielding grid 109 of the power IGBT device are flush with each other and higher than the lower surface of the floating P-type base region 10; the lower surfaces of the gate electrode 108 of the power IGBT device and the shielding gate 109 of the power IGBT device are lower than the lower surface of the P-type semiconductor body 4;
the transition region device 200 includes: the field-effect transistor comprises a P-type semiconductor substrate 1, a collector 15 positioned below the P-type substrate, an N-type field stop layer 2 positioned above the P-type substrate, and an N-type drift region 3 positioned above the N-type field stop layer 2; a trench disposed above the N-type drift region 3; a P-type semiconductor body region 4 and a floating P-type base region 10 are respectively arranged on two sides of the trench; the oxide layer 7 covers the P-type semiconductor body region 4 and the floating P-type base region 10; an emitter 11 covers the P-type semiconductor body 4 and the oxide layer 7; an oxide layer 7, a transition region device gate electrode 208 and a transition region device shielding gate 209 are arranged in the groove; the transition region device gate electrode 208 and the transition region device shield gate 209 are in the trench and are isolated from each other by the oxide layer 7; the upper surfaces of the transition region device gate electrode 208 and the transition region device shield gate 209 are flush; the lower surfaces of the transition region device gate electrode 208 and the transition region device shielding gate 209 are flush with each other and higher than the lower surface of the floating P-type base region 10; the lower surfaces of the transition region device gate electrode 208 and the transition region device shield gate 209 are lower than the lower surface of the P-type semiconductor body 4;
the IGBT voltage detection device 300 includes: the field effect transistor comprises a P-type semiconductor substrate 1, a collector 15 positioned below the P-type substrate, an N-type field stop layer 2 positioned above the P-type substrate, and an N-type drift region 3 positioned above the N-type field stop layer 2; a trench disposed above the N-type drift region 3; a P-type semiconductor body region 4 and a floating P-type base region 10 are respectively arranged on two sides of the groove; a voltage detection capacitor is arranged above the floating P-type base region 10; the voltage detection capacitor consists of an oxide layer 7, an upper electrode plate 14 of the voltage detection capacitor and a lower electrode plate 12 of the polysilicon voltage detection capacitor; the upper electrode plate 14 of the voltage detection capacitor and the lower electrode plate 12 of the polysilicon voltage detection capacitor are positioned inside the oxide layer 7, and the upper electrode plate 14 of the voltage detection capacitor is isolated from the lower electrode plate 12 of the polysilicon voltage detection capacitor through the oxide layer 7; the lower pole plate 12 of the polysilicon voltage detection capacitor and the floating P-type base region 10 are isolated from each other through the oxide layer 7; the detection voltage leading-out end 13 covers the IGBT voltage detection device shielding gate 309, the polysilicon voltage detection capacitor lower electrode plate 12 and the oxide layer 7; the oxide layer 7 covers the P-type semiconductor body region 4 and the upper electrode plate 14 of the voltage detection capacitor; an emitter 11 covers the P-type semiconductor body 4; an oxide layer 7, an IGBT voltage detection device gate electrode 308 and an IGBT voltage detection device shielding gate 309 are arranged in the groove; the IGBT voltage detection device gate electrode 308 and the IGBT voltage detection device shielding gate 309 are arranged in the groove and are mutually isolated through the oxide layer 7; the lower surfaces of the gate electrode 308 of the IGBT voltage detection device and the shielding grid 309 of the IGBT voltage detection device are flush with each other and higher than the lower surface of the floating P-type base region 10; the lower surfaces of the IGBT voltage detection device gate electrode 308 and the IGBT voltage detection device shield gate 309 are lower than the lower surface of the P-type semiconductor body 4.
Preferably, the collector 15 of the power IGBT device and the collector 15 of the transition region device are connected to the collector 15 of the IGBT voltage detection device; the power IGBT device grid 108 and the transition region device grid 208 are connected with an IGBT voltage detection device grid 308; an emitter 11 of the power IGBT device is connected with an emitter 11 of the transition region device; the emitter 11 of the power IGBT device and the emitter 11 of the transition region device are electrically connected with the emitter 11 of the IGBT voltage detection device, but are not connected on the layout; an emitter 11 of the IGBT voltage detection device is connected with an upper polar plate 14 of the voltage detection capacitor; the power IGBT device shielding gate 109 is connected with the transition region device shielding gate 209; the IGBT voltage detection device shielding grid 309 and the polysilicon voltage detection capacitor lower electrode plate 12 are connected through a detection voltage leading-out terminal 13.
Preferably, the detection voltage having the same voltage variation trend as that of the collector 15 of the power IGBT device can be obtained through the detection voltage leading-out end 13 of the IGBT voltage detection device, and the size of the voltage detection capacitor can be adjusted by adjusting the distance between the upper plate of the voltage detection capacitor and the lower plate of the polysilicon voltage detection capacitor or the area between the upper plate of the voltage detection capacitor and the lower plate of the polysilicon voltage detection capacitor, so as to obtain different detection voltages.
Preferably, all P-type and N-type conductivity regions are interchanged.
Preferably, the semiconductor used for the device is single crystal silicon, silicon carbide, or gallium nitride.
Preferably, the detection voltage terminal 13 is implemented by using metals with multiple work functions.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a power semiconductor device with a voltage detection function, which can obtain voltage with the same change trend as the collector voltage of a power IGBT device, feed back the voltage in time and does not need to additionally increase the area of the device. The voltage detection structure is integrated with the same process flow of the device, the voltage detection structure is good in compatibility with the original device, an additional voltage detection circuit is not needed, the whole area can be reduced, and the power consumption cost is reduced. Meanwhile, the voltage detection capacitor integrated in the IGBT voltage detection device area is connected with the parasitic capacitor in parallel, so that the lower voltage of a sampling point can be ensured, the analog control circuit compatible with lower voltage is used for processing a sampling signal, and the design cost and the device compatibility are further optimized.
Drawings
Fig. 1 is a schematic structural diagram of a power semiconductor device with a voltage detection function according to the present invention.
Fig. 2 is a schematic structural diagram of a power IGBT device with a power semiconductor device structure having a voltage detection function according to the present invention.
Fig. 3 is a schematic diagram of a transition region device structure of a power semiconductor device structure with a voltage detection function according to the present invention.
Fig. 4 is a schematic structural diagram of an IGBT voltage detection device of the power semiconductor device structure with voltage detection function according to the present invention.
Fig. 5 is a schematic diagram of a layout structure of a power semiconductor device structure with a voltage detection function according to the present invention.
Fig. 6 is a schematic diagram illustrating a voltage detection principle of the power semiconductor device structure with voltage detection function according to the present invention.
The left diagram is a schematic diagram of the parasitic capacitance of the device, and the right diagram is an equivalent circuit diagram of the parasitic capacitance.
100 is a power IGBT device, 200 is a transition region device, 300 is an IGBT voltage detection device, 400 is a Gate Pad region, 1 is a P-type semiconductor substrate, 2 is an N-type field stop layer, 3 is an N-type drift region, 4 is a P-type semiconductor body region, 5 is an N-type semiconductor emitter region, 6 is a P-type semiconductor ohmic contact region, 7 is an oxide layer, 108 is a power IGBT device Gate electrode, 208 is a transition region device Gate electrode, 308 is an IGBT voltage detection device Gate electrode, 109 is a power IGBT device shielding Gate, 209 is a transition region device shielding Gate, 309 is an IGBT voltage detection device shielding Gate, 10 is a floating P-type base region, 11 is an emitter electrode, 12 is a polysilicon voltage detection capacitor lower polar plate, 13 is a detection voltage leading-out end, 14 is a voltage detection capacitor upper polar plate, and 15 is a collector electrode.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Fig. 1 is a schematic structural diagram of a power semiconductor device with a voltage detection function according to the present invention, which includes:
the power IGBT device 100, the transition region device 200 and the IGBT voltage detection device 300 are integrated on the same substrate;
the collector 15 of the power IGBT device and the collector 15 of the transition region device are connected with the collector 15 of the IGBT voltage detection device; the power IGBT device grid 108 and the transition region device grid 208 are connected with an IGBT voltage detection device grid 308; an emitter 11 of the power IGBT device is connected with an emitter 11 of the transition region device; the emitter 11 of the power IGBT device and the emitter 11 of the transition region device are electrically connected with the emitter 11 of the IGBT voltage detection device, but are not connected on the layout; an emitter 11 of the IGBT voltage detection device is connected with an upper polar plate 14 of the voltage detection capacitor; the power IGBT device shielding gate 109 is connected with the transition region device shielding gate 209; the IGBT voltage detection device shielding grid 309 and the polysilicon voltage detection capacitor lower electrode plate 12 are connected through a detection voltage leading-out end 13.
Fig. 2 is a schematic structural diagram of a power IGBT device in a power semiconductor device structure with a voltage detection function according to the present invention, including:
the IGBT voltage detection device 300 includes: the field effect transistor comprises a P-type semiconductor substrate 1, a collector 15 positioned below the P-type substrate, an N-type field stop layer 2 positioned above the P-type substrate, and an N-type drift region 3 positioned above the N-type field stop layer 2; a trench disposed above the N-type drift region 3; a P-type semiconductor body region 4 and a floating P-type base region 10 are respectively arranged on two sides of the trench; a voltage detection capacitor is arranged above the floating P-type base region 10; the voltage detection capacitor consists of an oxide layer 7, an upper plate 14 of the voltage detection capacitor and a lower plate 12 of the polysilicon voltage detection capacitor; the upper plate 14 of the voltage detection capacitor and the lower plate 12 of the polysilicon voltage detection capacitor are positioned inside the oxide layer 7, and the upper plate 14 of the voltage detection capacitor is isolated from the lower plate 12 of the polysilicon voltage detection capacitor through the oxide layer 7; the lower pole plate 12 of the polysilicon voltage detection capacitor and the floating P-type base region 10 are isolated from each other through the oxide layer 7; the detection voltage leading-out end 13 covers the IGBT voltage detection device shielding gate 309, the polysilicon voltage detection capacitor lower electrode plate 12 and the oxide layer 7; the oxide layer 7 covers the P-type semiconductor body region 4 and the upper electrode plate 14 of the voltage detection capacitor; an emitter 11 covers the P-type semiconductor body 4; an oxide layer 7, an IGBT voltage detection device gate electrode 308 and an IGBT voltage detection device shielding gate 309 are arranged in the groove; the IGBT voltage detection device gate electrode 308 and the IGBT voltage detection device shielding gate 309 are arranged in the groove and are mutually isolated through the oxide layer 7; the lower surfaces of the gate electrode 308 of the IGBT voltage detection device and the shielding gate 309 of the IGBT voltage detection device are flush and higher than the lower surface of the floating P-type base region 10; the lower surfaces of the IGBT voltage detection device gate electrode 308 and the IGBT voltage detection device shield gate 309 are lower than the lower surface of the P-type semiconductor body 4.
Fig. 3 is a schematic structural diagram of a transition region device in a power semiconductor device structure with a voltage detection function according to the present invention, including:
the transition region device 200 includes: the field-effect transistor comprises a P-type semiconductor substrate 1, a collector 15 positioned below the P-type substrate, an N-type field stop layer 2 positioned above the P-type substrate, and an N-type drift region 3 positioned above the N-type field stop layer 2; a trench disposed above the N-type drift region 3; a P-type semiconductor body region 4 and a floating P-type base region 10 are respectively arranged on two sides of the groove; the oxide layer 7 covers the P-type semiconductor body region 4 and the floating P-type base region 10; an emitter 11 covers the P-type semiconductor body 4 and the oxide layer 7; an oxide layer 7, a transition region device gate electrode 208 and a transition region device shielding gate 209 are arranged in the groove; the transition region device gate electrode 208 and the transition region device shielding gate 209 are in the trench and are isolated from each other by the oxide layer 7; the upper surfaces of the transition region device gate electrode 208 and the transition region device shield gate 209 are flush; the lower surfaces of the gate electrode 208 of the transition region device and the shielding gate 209 of the transition region device are flush with each other and higher than the lower surface of the floating P-type base region 10; the lower surfaces of the transition region device gate electrode 208 and the transition region device shield gate 209 are lower than the lower surface of the P-type semiconductor body 4;
fig. 4 is a schematic structural diagram of an IGBT voltage detection device in a power semiconductor device structure with a voltage detection function according to the present invention, including:
the power IGBT device 100 includes: the field-effect transistor comprises a P-type semiconductor substrate 1, a collector 15 positioned below the P-type substrate, an N-type field stop layer 2 positioned above the P-type substrate, and an N-type drift region 3 positioned above the N-type field stop layer 2; a trench disposed above the N-type drift region 3; a P-type semiconductor body region 4 and a floating P-type base region 10 are respectively arranged on two sides of the trench; an N-type semiconductor emitter region 5 and a P-type semiconductor ohmic contact region 6 are arranged above the P-type semiconductor body region 4; the N-type semiconductor emitter region 5 is in contact with the side face of the groove; the P-type semiconductor ohmic contact region 6 is in contact with the side face, away from the groove, of the N-type semiconductor emitting region 5, and is not in contact with the groove; the upper surface of the P-type semiconductor ohmic contact region 6 is flush with the upper surface of the N-type semiconductor emitter region 5; the oxide layer 7 covers the N-type semiconductor emitter region 5 and the floating P-type base region 10; the emitter 11 covers the P-type semiconductor ohmic contact region 6, the oxide layer 7 and the N-type semiconductor emitter region 5; an oxide layer 7, a power IGBT device gate electrode 108 and a power IGBT device shielding gate 109 are arranged in the groove; the gate electrode 108 of the power IGBT device and the shielding gate 109 of the power IGBT device are arranged in the groove and are mutually isolated through the oxide layer 7; the upper surfaces of the gate electrode 108 and the shielding gate 109 of the power IGBT device are flush and higher than the lower surfaces of the P-type semiconductor ohmic contact region 6 and the N-type semiconductor emitter region 5; the lower surfaces of the gate electrode 108 of the power IGBT device and the shielding grid 109 of the power IGBT device are flush with each other and higher than the lower surface of the floating P-type base region 10; the lower surfaces of the gate electrode 108 of the power IGBT device and the shielding gate 109 of the power IGBT device are lower than the lower surface of the P-type semiconductor body 4;
fig. 5 is a schematic diagram of a layout structure of a power semiconductor device structure with voltage detection function according to the present invention, including:
power IGBT device 100, transition region device 200, IGBT voltage detection device 300, and Gate Pad region 400. The area of the power IGBT device 100 occupies the total area of most devices, the power requirement of the devices can be effectively ensured, the power IGBT device 100 and the IGBT voltage detection device 300 are separated by the transition region device 200, are positioned at the edge of the devices, only occupy small device area, can ensure that the normal work of the power IGBT device region is not influenced, and have higher integration level.
Fig. 6 is a schematic diagram illustrating a voltage detection principle of a power semiconductor device structure with a voltage detection function according to the present invention, which includes:
capacitance C exists between the IGBT voltage detection device shielding grid 309 and the collector 15 sgc1 (ii) a Lower electrode of voltage detection capacitorA capacitance C exists between the plate and the collector 15 sgc2 (ii) a A capacitor C exists between the IGBT voltage detection device shielding grid 309 and the IGBT voltage detection device gate electrode 308 sgg (ii) a Capacitance C exists between the IGBT voltage detection device shielding grid 309 and the emitter 11 sge (ii) a Voltage detection capacitor C c And the IGBT voltage detection device is integrated on the IGBT voltage detection device. And a detection voltage with the same voltage variation trend of the collector 15 of the power IGBT device can be obtained at a detection voltage leading-out terminal. Detecting capacitance C by adjusting voltage c And controlling the magnitude of the obtained detection voltage. The distance between the upper plate of the voltage detection capacitor and the lower plate of the polysilicon voltage detection capacitor is reduced or the areas of the upper plate of the voltage detection capacitor and the lower plate of the polysilicon voltage detection capacitor are increased, and the voltage detection capacitor C c Increasing, the resulting detection voltage decreases; increasing the distance between the upper plate of the voltage detection capacitor and the lower plate of the polysilicon voltage detection capacitor or reducing the area between the upper plate of the voltage detection capacitor and the lower plate of the polysilicon voltage detection capacitor, and the voltage detection capacitor C c And the resulting detection voltage decreases. At the same time, the voltage detection capacitor C c The sampling point voltage can be ensured to be lower by being connected with the parasitic capacitor in parallel, the sampling signal is processed by the analog control circuit compatible with lower voltage, and the design cost and the device compatibility are further optimized.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Those skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (6)

1. A power semiconductor device having a voltage detection function, characterized by comprising: the power IGBT device (100), the transition region device (200) and the IGBT voltage detection device (300) are integrated on the same substrate;
the power IGBT device (100) comprises: the field effect transistor comprises a P-type semiconductor substrate (1), a collector (15) positioned below the P-type substrate, an N-type field stop layer (2) positioned above the P-type substrate, and an N-type drift region (3) positioned above the N-type field stop layer (2); a trench disposed above said N-type drift region (3); a P-type semiconductor body region (4) and a floating P-type base region (10) are respectively arranged on two sides of the groove; an N-type semiconductor emitter region (5) and a P-type semiconductor ohmic contact region (6) are arranged above the P-type semiconductor body region (4); the N-type semiconductor emitter region (5) is in contact with the side face of the groove; the P-type semiconductor ohmic contact region (6) is in contact with the side face, far away from the groove, of the N-type semiconductor emitting region (5) and is not in contact with the groove; the upper surface of the P-type semiconductor ohmic contact region (6) is flush with the upper surface of the N-type semiconductor emitter region (5); an oxide layer (7) covers the N-type semiconductor emitter region (5) and the floating P-type base region (10); an emitter electrode (11) covers the P-type semiconductor ohmic contact area (6), the oxidation layer (7) and the N-type semiconductor emitter area (5); an oxide layer (7), a power IGBT device gate electrode (108) and a power IGBT device shielding gate (109) are arranged in the groove; the gate electrode (108) of the power IGBT device and the shielding gate (109) of the power IGBT device are arranged in the groove and are mutually isolated through the oxide layer (7); the upper surfaces of the power IGBT device gate electrode (108) and the power IGBT device shielding gate (109) are flush and higher than the lower surfaces of the P-type semiconductor ohmic contact region (6) and the N-type semiconductor emitting region (5); the lower surfaces of the gate electrode (108) of the power IGBT device and the shielding gate (109) of the power IGBT device are flush and higher than the lower surface of the floating P-type base region (10); the lower surfaces of the gate electrode (108) of the power IGBT device and the shielding gate (109) of the power IGBT device are lower than the lower surface of the P-type semiconductor body (4);
the transition region device (200) comprises: the field effect transistor comprises a P-type semiconductor substrate (1), a collector (15) positioned below the P-type substrate, an N-type field stop layer (2) positioned above the P-type substrate, and an N-type drift region (3) positioned above the N-type field stop layer (2); a trench disposed above said N-type drift region (3); a P-type semiconductor body region (4) and a floating P-type base region (10) are respectively arranged on two sides of the groove; an oxide layer (7) covers the P-type semiconductor body region (4) and the floating P-type base region (10); an emitter (11) covers the P-type semiconductor body region (4) and the oxide layer (7); an oxide layer (7), a transition region device gate electrode (208) and a transition region device shielding gate (209) are arranged in the groove; the transition region device gate electrode (208) and the transition region device shielding gate (209) are in the groove and are mutually isolated through the oxide layer (7); the upper surfaces of the transition region device gate electrode (208) and the transition region device shielding gate (209) are flush; the lower surfaces of the gate electrode (208) of the transition region device and the shielding gate (209) of the transition region device are flush with each other and are higher than the lower surface of the floating P-type base region (10); the lower surfaces of the transition region device gate electrode (208) and the transition region device shielding gate (209) are lower than the lower surface of the P-type semiconductor body region (4);
the IGBT voltage detection device (300) includes: the field effect transistor comprises a P-type semiconductor substrate (1), a collector (15) positioned below the P-type substrate, an N-type field stop layer (2) positioned above the P-type substrate, and an N-type drift region (3) positioned above the N-type field stop layer (2); a trench disposed above said N-type drift region (3); a P-type semiconductor body region (4) and a floating P-type base region (10) are respectively arranged on two sides of the groove; a voltage detection capacitor is arranged above the floating P-type base region (10); the voltage detection capacitor is composed of an oxide layer (7), an upper electrode plate (14) of the voltage detection capacitor and a lower electrode plate (12) of the polysilicon voltage detection capacitor; the upper pole plate (14) of the voltage detection capacitor and the lower pole plate (12) of the polysilicon voltage detection capacitor are positioned inside the oxide layer (7), and the upper pole plate (14) of the voltage detection capacitor is isolated from the lower pole plate (12) of the polysilicon voltage detection capacitor through the oxide layer (7); the lower pole plate (12) of the polysilicon voltage detection capacitor is isolated from the floating P-type base region (10) through the oxide layer (7); a detection voltage leading-out end (13) covers the IGBT voltage detection device shielding grid (309), the lower electrode plate (12) of the polysilicon voltage detection capacitor and the oxide layer (7); the oxide layer (7) covers the P-type semiconductor body region (4) and the upper electrode plate (14) of the voltage detection capacitor; an emitter (11) covers the P-type semiconductor body (4); an oxide layer (7), an IGBT voltage detection device gate electrode (308) and an IGBT voltage detection device shielding gate (309) are arranged in the groove; the IGBT voltage detection device gate electrode (308) and the IGBT voltage detection device shielding gate (309) are arranged in the groove and are mutually isolated through the oxidation layer (7); the lower surfaces of the gate electrode (308) of the IGBT voltage detection device and the shielding gate (309) of the IGBT voltage detection device are flush and higher than the lower surface of the floating P-type base region (10); the lower surfaces of the IGBT voltage detection device gate electrode (308) and the IGBT voltage detection device shielding gate (309) are lower than the lower surface of the P-type semiconductor body area (4).
2. The power semiconductor device with voltage detection function according to claim 1, characterized in that: the collector (15) of the power IGBT device and the collector (15) of the transition region device are connected with the collector (15) of the IGBT voltage detection device; the power IGBT device grid (108) and the transition region device grid (208) are connected with the IGBT voltage detection device grid (308); the emitter (11) of the power IGBT device is connected with the emitter (11) of the transition region device; the emitter (11) of the power IGBT device and the emitter (11) of the transition region device are electrically connected with the emitter (11) of the IGBT voltage detection device, but are not connected on the layout; an emitter (11) of the IGBT voltage detection device is connected with an upper polar plate (14) of the voltage detection capacitor; the power IGBT device shielding grid (109) is connected with the transition region device shielding grid (209); the IGBT voltage detection device shielding grid electrode (309) and the polysilicon voltage detection capacitor lower pole plate (12) are connected through a detection voltage leading-out end (13).
3. The power semiconductor device with voltage detection function according to claim 1, characterized in that: the detection voltage with the same voltage change trend as that of a collector (15) of the power IGBT device can be obtained through a detection voltage leading-out end (13) of the IGBT voltage detection device, and the size of the voltage detection capacitor can be adjusted by adjusting the distance between an upper polar plate of the voltage detection capacitor and a lower polar plate of the polysilicon voltage detection capacitor or the area of the upper polar plate of the voltage detection capacitor and the lower polar plate of the polysilicon voltage detection capacitor, so that different detection voltages can be obtained.
4. The power semiconductor device with voltage detection function according to any one of claims 1 to 3, characterized in that: all P-type and N-type conductivity type regions are interchanged.
5. The power semiconductor device with voltage detection function according to claim 1, characterized in that: the semiconductor material used by the device is monocrystalline silicon, silicon carbide or gallium nitride.
6. The power semiconductor device with voltage detection function according to claim 1, characterized in that: the detection voltage leading-out end (13) is realized by adopting metals with various work functions.
CN202211052581.4A 2022-08-31 2022-08-31 Power semiconductor device with voltage detection function Pending CN115394756A (en)

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CN202211052581.4A CN115394756A (en) 2022-08-31 2022-08-31 Power semiconductor device with voltage detection function

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CN202211052581.4A CN115394756A (en) 2022-08-31 2022-08-31 Power semiconductor device with voltage detection function

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CN115394756A true CN115394756A (en) 2022-11-25

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