CN115296621B - Ultra-wideband low-noise amplifier based on gate-source low-coupling structure - Google Patents
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Abstract
The invention discloses an ultra-wideband low-noise amplifier based on a gate-source low-coupling structure, which is applied to the field of low-noise amplifier chips and aims to solve the problems that the conventional cascode amplifier is narrow in bandwidth and high in noise caused by high gate-source coupling of a second-stage cascode transistor. The cascode amplifier is improved, and on one hand, a grid-source low-coupling connection structure is adopted, so that parasitic capacitance is reduced, noise coefficient is reduced, and bandwidth is increased; on the other hand, the bandwidth is further expanded by combining a negative feedback structure.
Description
Technical Field
The invention belongs to the field of low-noise amplifier chips, and particularly relates to an ultra-wideband cascode low-noise amplifier.
Background
The low noise amplifier is commonly used in the first stage of a radio frequency and microwave receiving system, and amplifies a received signal, and the noise coefficient and the bandwidth directly influence the performance of the system. With the rapid development of ultra-wideband systems, such as electronic warfare systems, higher requirements are placed on ultra-wideband low noise amplifiers.
Ultra-wideband low-noise amplifiers can be divided into two main categories: traveling wave amplifiers and non-traveling wave amplifiers. The travelling wave amplifier is composed of a plurality of parallel transistors, the input and output ports are connected together by small inductors, and an artificial transmission line structure similar to a low-pass filter is formed by the input and output ports and the capacitors of the ports. Although there is an advantage in terms of bandwidth, the long length of the artificial transmission line introduces loss, which makes the noise figure large.
Non-traveling wave amplifiers generally adopt input and output reactance matching structures, and have advantages in terms of noise, but have relatively narrow bandwidths compared with traveling wave amplifiers. The traditional cascode amplifier is a typical broadband non-traveling wave amplifier, but the bandwidth is still narrow, and the gate-source coupling of the second stage common gate transistor is high, which causes high noise.
Disclosure of Invention
In order to solve the technical problems, the invention provides an ultra-wideband low-noise amplifier based on a gate-source low-coupling structure, which improves the traditional cascode amplifier, adopts a gate-source low-coupling connection structure, reduces the coupling between the gate and the source of a common-gate transistor, reduces the noise coefficient and increases the bandwidth; and the bandwidth is expanded by combining a negative feedback structure.
The technical scheme adopted by the invention is as follows: an ultra-wideband low noise amplifier based on a gate-source low coupling structure, comprising: the drain electrode of the first-stage common-gate transistor T1 is connected with the source electrode of the second-stage common-gate transistor T2 through an improved gate-source low coupling connection structure, so that the gate-source coupling parasitic capacitance of the second-stage common-gate transistor T2 is reduced;
a feeding branch of the drain voltage Vd is connected between the port of the drain voltage Vd and the drain electrode of the second common-gate transistor T2, and the drain electrode of the second common-gate transistor T2 is connected with the feeding branch of the drain voltage Vd through a transmission line TL 3; the drain voltage Vd port is also connected with the grid electrode of the second-stage common-gate transistor T2 through a second-stage Vg feeding branch, and provides grid electrode voltage for the second-stage common-gate transistor T2 in a resistance voltage division mode;
the first-stage Vg feed branch is connected with the grid of the first-stage common source transistor T1 through a transmission line TL 2;
the grid electrode of the first-stage common source transistor T1 sequentially passes through the transmission line TL2 and the blocking capacitor C B1 The source electrode of the first-stage common source transistor T1 is grounded;
the drain electrode of the second-stage common-gate transistor T2 sequentially passes through the transmission line TL3, the transmission line TL4 and the blocking capacitor C B2 And the grid of the second stage common-gate transistor T2 is connected with the capacitor CG and provides radio-frequency ground.
The negative feedback branch circuit is connected to the front of the grid electrode of the first-stage common-source transistor T1 and the rear of the drain electrode of the second-stage common-gate transistor T2.
The invention has the beneficial effects that: the first-stage common-source transistor T1 and the second-stage common-gate transistor T2 are connected through the improved gate-source low-coupling connection structure, and the method has the following advantages:
1. the invention provides a low coupling connection structure based on a grid-source, which improves a cascode low noise amplifier, reduces the grid-source coupling parasitic capacitance of a transistor T2, theoretically analyzes that the noise coefficient of the whole frequency can be reduced after the parasitic capacitance is reduced, and has certain bandwidth expansion effect;
2. the bandwidth is expanded by a method of combining negative feedback structures and cascode structures.
Drawings
FIG. 1 is a block diagram of the ultra-wideband low noise amplifier of the present invention;
FIG. 2 is a schematic diagram of metal layers M1 and M2 and a dielectric layer of a GaAs chip;
FIG. 3 is a schematic view of a conventional connection structure;
FIG. 4 is a schematic diagram of an improved gate-source low coupling connection structure;
FIG. 5 is a comparison graph of S parameter simulation of a conventional connection structure and a modified gate-source low-coupling connection structure;
FIG. 6 is an equivalent circuit diagram of the transistors T1 and T2 and the connection structure;
FIG. 7 is a comparison of the minimum noise figure for transistors T1, T2 using a conventional connection structure and a modified gate-source low coupling connection structure, respectively;
FIG. 8 is the results of testing the amplifiers S11, S22;
FIG. 9 is the amplifier S21 test result;
fig. 10 is the amplifier noise figure test result.
Detailed Description
In order to facilitate the understanding of the technical contents of the present invention by those skilled in the art, the present invention will be further explained with reference to the accompanying drawings.
As shown in fig. 1, the amplifier of the present invention comprises: the first-stage cascode transistor T1, the second-stage common-gate transistor T2, the negative feedback branch, a feed branch of a drain voltage Vd, a first-stage Vg feed branch and a second-stage Vg feed branch are connected together through a connecting structure, and the first-stage cascode transistor T1 and the second-stage common-gate transistor T2 are connected together through a connecting structure(ii) a Specifically, the method comprises the following steps: the grid electrode of the second-stage common-gate transistor T2 is connected with the capacitor CG and provides radio-frequency ground; the output port of the drain electrode of the second-stage common-gate transistor T2 is connected with a transmission line TL 3; negative feedback branch routing resistor R 1 Capacitor C 1 The negative feedback branch is connected between the transmission line TL3 and the grid electrode of the transistor T1; transmission line TL4, DC blocking capacitor C B2 Connected between the transmission line TL3 and the output port; inductor L 1 With feed capacitance C connected in parallel to ground B3 A feed branch of a leakage voltage Vd is formed, and the feed branch of the leakage voltage Vd is connected with TL 3; the drain voltage port Vd provides the gate voltage of the second stage common-gate transistor T2 through a second stage Vg feed branch which is a routing resistor R B2 、R B3 Forming; a transmission line TL2 is connected with the grid electrode of the first stage common source transistor T1, and a DC blocking capacitor C B1 Connected between transmission line TL2 and the input port; first-stage Vg feed branch routing resistor R B1 Series transmission line TL1 and parallel to ground capacitance C B4 The first-stage Vg feed branch is connected between the transmission line TL2 and the Vg feed port. The transmission lines TL1, TL2, TL3, TL4 serve as connections and partial impedance matching.
The amplifier chip of the invention is manufactured by adopting a GaAs process, and the schematic diagram of the chip medium is shown in figure 2. GaAs is a substrate material, an M1 metal layer is deposited on the substrate material, an insulating layer is deposited on the M1 metal layer, and an M2 metal layer is deposited on the insulating layer. Transistors, capacitors, inductors, resistors and transmission lines in the amplifier are all made of M1 or M2 metal layers.
In the cascode amplifier, the drain electrode of the first-stage cascode transistor T1 is required to be used as an output and connected to the source electrode of the second-stage cascode transistor T2; the gate of the second stage common-gate transistor T2 needs to be connected with the CG capacitor and the second stage Vg feeding branch. In the present invention, a connection transmission line between the first-stage cascode transistor T1 and the second-stage common-gate transistor T2 and a transmission line connecting the gate of the second-stage common-gate transistor T2 to the CG capacitor are referred to as a "connection structure". A conventional connection structure is shown in fig. 3, in which a first-stage cascode transistor T1 and a second-stage common-gate transistor T2 are connected by using an M2 metal layer (or an M1 metal layer), and the second-stage common-gate transistor is connected by using an M2 metal layer (or an M1 metal layer)The gate of the transistor T2 is connected to the CG capacitor by using an M1 metal layer (or an M2 metal layer), that is, "between the first-stage common-source transistor T1 and the second-stage common-gate transistor T2" and "between the gate of the second-stage common-gate transistor T2 and the CG capacitor" are respectively connected by using different metal layers, one of them is connected by using an M1 metal layer, and the other is connected by using an M2 metal layer. The traditional connection mode has the advantages that two paths of signals are respectively input into two sources of the second-stage common-gate transistor T2, so that the transmission line inductance and loss are reduced, and the input signals of the second-stage common-gate transistor T2 are more balanced; the defect is that the two layers of metal are overlapped, and because the current and the processing process limit, the overlapped parts of the two layers of transmission lines have certain width, a parasitic coupling capacitor is introduced. An equivalent circuit of the first-stage common-source transistor T1, the second-stage common-gate transistor T2 and the connection structure is shown in FIG. 6, and parasitic coupling capacitance introduced by the connection structure is C in FIG. 6 gs ’。
The equivalent circuit of the transistor is substituted into the circuit shown in FIG. 6, and a capacitor C is adopted between the grid and the source of the first stage common source transistor T1 gs1 Equivalently, C is adopted between the gate and the drain gd1 Equivalently, VCCS1 and a capacitor C are adopted between the drain and the source ds1 Conductance G ds1 Three elements are equivalent in parallel. A capacitor C is adopted between the grid electrode and the source electrode of the second-stage common-grid transistor T2 gs2 Using C between equivalent, drain-source gd2 Equivalently, VCCS2 and a capacitor C are adopted between the drain and the source ds2 Conductance G ds2 The three elements are equivalent in parallel. Wherein, VCCS1 and VCCS2 are No. 1 and No. 2 Voltage-controlled Current sources (VCCS) respectively, and the currents thereof are I respectively d1 ＝g m1 V gs1 e jωτ1 ，I d2 ＝g m2 V gs2 e jωτ1 。g m1 And g m2 The transconductance of the voltage controlled current source No. 1 and the transconductance of the voltage controlled current source No. 2 are represented respectively, tau 1 and tau 2 represent the delay of the voltage controlled current source No. 1 and the voltage controlled current source No. 2 respectively, omega represents angular frequency, V gs1 And V gs2 And the voltages of the gate capacitances of the first stage common source transistor T1 and the second stage common gate transistor T2 are respectively represented.
To reduce parasitic capacitance C gs ' the low noise amplifier of the present invention adopts a gate-source low coupling connection structure, whichThe connection structure is shown in fig. 4. Namely, the drain electrode of the first-stage common-source transistor T1 is connected with the unilateral source electrode of the second-stage common-gate transistor T2, so that the overlapping of the grid electrode connecting wires of the second-stage common-gate transistor T2 is avoided, and the parasitic capacitance C can be greatly reduced gs ’。
The first-stage common-source transistor T1, the second-stage common-gate transistor T2 and the second-stage common-gate transistor T2 may be connected by using an M1 metal layer as shown in fig. 4, and in the same way, the second-stage common-gate transistor T2 and the CG capacitor may be connected by using an M2 metal layer, or may be connected by using different metal layers, respectively.
The simulation comparison of the S parameter of the conventional connection structure and the improved gate-source low coupling connection structure is shown in FIG. 5. Simulation results show that at the frequency of 5GHz, the S parameter between the grid and the source of the traditional connecting structure is-7.4 dB, and the S parameter of the improved grid-source low-coupling connecting structure is-54.2 dB. Parasitic coupling capacitance C introduced by traditional connection structure gs ' about 0.12pF, and the parasitic coupling capacitance C introduced by the improved gate-source low coupling connection structure gs ' is about 0.0006pF. Therefore, the parasitic coupling capacitance introduced by the improved gate-source low-coupling connection structure is greatly reduced.
The effect of the improved gate-source low coupling connection structure adopted by the invention is analyzed in the aspects of noise coefficient and ultra wide band respectively as follows:
1. theoretical analysis of noise figure
The noise figure of the cascode amplifier can be expressed by the following formula:
the noise figure is composed of two parts, F 1 Representing the noise figure, F, introduced by the first-stage common-source transistor T1 2 Representing the noise figure of the junction and second stage common-gate transistor T2.
Respectively represent the input reference noise voltage and noise current of the first stage common source transistor T1, R s The resistance is the transistor source resistance (considering that the first stage common source transistor T1 and the second stage common gate transistor T2 are the same in size, the resistance is the same), and T is the temperature. Gamma ray 2 Is the bias correlation coefficient, G, of the second stage common-gate transistor T2 ds2 Is the drain-source conductance, ω, of the second stage common-gate transistor T2 0 Is the noise calculation of the first stage equivalent resonance frequency, ω T1 ＝(g m1 /C gs1 )。C x Represents the sum of the parasitic capacitance of the connection structure and the front and the back, and is particularly designated as C in the invention x ＝C ds1 +[(C gs2 +C gs ’)//CG]. "/" denotes capacitance (C) gs2 +C gs ') is connected in parallel with the capacitor CG.
The first and second terms on the rightmost side of the equation are related to the input first stage common source transistor T1, and the third term is related to the connection structure and the second stage common gate transistor T2. By reducing parasitic capacitance C x The noise figure of the second stage common-gate transistor T2 and the connection structure can be reduced. In the traditional method, a method of connecting capacitors and inductors in series or in parallel is adopted, and parasitic parameters are reduced through resonance. For example, the parallel capacitor-inductor branch, the parallel capacitor and inductor branch, and the connection structure are connected with an inductor in series. By means of resonance, C can be reduced significantly around the resonance frequency x Thereby reducing the noise coefficient; however, the conventional method has a disadvantage in that the frequency range of noise reduction is limited, and the noise figure is even increased beyond the resonance frequency.
The invention provides a low-noise amplifier based on a grid-source low-coupling connection structure, which reduces parasitic capacitance C gs '. Although only C can be reduced compared with the traditional resonance method gs ', C cannot be further cancelled by resonance ds1 And C gs2 The reduction of capacitance is small; but the advantage is that the noise figure can be reduced in the whole frequency band, thereby covering ultra-wideband applications.
As shown in fig. 7, the first-stage common-source transistor T1 and the second-stage common-gate transistor T2 are respectively subjected to comparative simulation by using a conventional connection structure and an improved gate-source low-coupling connection structure. At the upper limit of the working frequency of the amplifier of 22GHz, the minimum noise coefficient NFmin is 1.02dB after the traditional connecting structure is adopted, the minimum noise coefficient NFmin of the improved gate-source low-coupling structure is about 0.85dB, and 0.17dB is reduced. The improved grid-source low-coupling connection structure improves the noise coefficient in the whole frequency band, and the improvement is more obvious along with the increase of the frequency.
2. Ultra-wideband implementation
In order to realize the 2-22GHz ultra-wideband low noise amplifier, the invention combines a grid-source low coupling connection structure with a cascode structure and a negative feedback structure, thereby further expanding the bandwidth.
In the amplifier, the gate-drain capacitance C gd Is an important factor affecting bandwidth, resulting in degraded gain and isolation performance, as well as a reduction in cutoff frequency. As shown below, for a single stage common source amplifier C due to the Miller effect gd The input port capacitance is increased, and the input port equivalent capacitance is:
C in ＝C gs +(1+A)C gd
in the formula, A is the amplification factor of the transistor, and the Miller effect increases the matching difficulty, so that the gain roll-off is more obvious. The cascode amplifier adopts two stages of transistors for amplification, and a feedback signal needs to pass through the two transistors, so that the action of the Miller effect is reduced, and the bandwidth is further expanded.
As shown in fig. 1, a negative feedback structure, i.e., a signal path, is added between the transmission line TL3 and the transistor T1 to achieve broadband gain and impedance matching at the cost of reduced gain, and to improve stability and gain flatness. Capacitor C 1 The resistor R plays the roles of blocking DC and regulating frequency 1 The feedback quantity is adjusted.
The invention applies the grid-source low coupling structure to the cascode amplifier and realizes the 2-22GHz ultra-wideband low noise amplifier by matching with the negative feedback structure. The reflection coefficient, gain and noise figure are shown in fig. 8, 9 and 10, respectively. The test result shows that in the range of 2-22GHz, S11 is less than or equal to-6.3dB, S22 is less than or equal to-5.3 dB, the gain is in the range of 14.3-16dB, the noise coefficient NF is less than or equal to 1.5dB (2-18 GHz), and the NF is less than or equal to 1.7dB (18-22 GHz). In the ultra-wideband, a relatively flat gain is obtained. For GaAs-based low noise amplifier, within the range of 2-18GHz, the very good noise coefficient is less than or equal to 1.5dB.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (7)
1. An ultra-wideband low noise amplifier based on a gate-source low coupling structure, comprising: the drain electrode of the first-stage common-gate transistor T1 is connected with the source electrode of the second-stage common-gate transistor T2 through an improved gate-source low coupling connection structure, so that the gate-source coupling parasitic capacitance of the second-stage common-gate transistor T2 is reduced;
the drain electrode of the first-stage common-source transistor T1 is connected with the source electrode of the second-stage common-gate transistor T2 through an improved back-gate-source low-coupling connection structure, and the method specifically comprises the following steps: the drain electrode of the first-stage common source transistor T1 is connected with the single-side source electrode of the second-stage common gate transistor T2;
a feeding branch of the drain voltage Vd is connected between the port of the drain voltage Vd and the drain electrode of the second common-gate transistor T2, and the drain electrode of the second common-gate transistor T2 is connected with the feeding branch of the drain voltage Vd through a transmission line TL 3; the drain voltage Vd port is also connected with the grid electrode of the second-stage common-gate transistor T2 through a second-stage Vg feed branch, and provides grid electrode voltage for the second-stage common-gate transistor T2 in a resistance voltage division mode;
the first-stage Vg feed branch is connected with the grid electrode of the first-stage common-source transistor T1 through a transmission line TL 2;
the grid electrode of the first-stage common-source transistor T1 sequentially passes through the transmission line TL2 and the blocking capacitor C B1 The source electrode of the first-stage common source transistor T1 is grounded;
the drain electrode of the second-stage common-gate transistor T2 sequentially passes through the transmission line TL3, the transmission line TL4 and the blocking capacitor C B2 The grid electrode of the second-stage common-gate transistor T2 is connected with the capacitor CG to provide radio frequency ground;
the negative feedback branch is connected to the front of the grid electrode of the first-stage common-source transistor T1 and the rear of the drain electrode of the second-stage common-gate transistor T2, and the drain electrode of the second common-gate transistor T2 is connected with the negative feedback branch through a transmission line TL 3; the negative feedback branch comprises a resistor R 1 Capacitor C 1 Resistance R 1 Is connected with the grid electrode of the first stage common source transistor T1, and a resistor R 1 Second terminal and capacitor C 1 Is connected to a first terminal of a capacitor C 1 And the second terminal thereof is connected to the drain of the second stage common-gate transistor T2 via a transmission line TL 3.
2. The ultra-wideband low-noise amplifier based on the gate-source low-coupling structure as claimed in claim 1, wherein the first stage Vg feeding branch comprises: resistance R B1 Transmission line TL1 and capacitor C B4 (ii) a Resistance R B1 Series transmission line TL1 back-to-ground capacitance C B4 And (4) connecting in parallel.
3. The ultra-wideband low-noise amplifier based on the gate-source low-coupling structure as claimed in claim 2, wherein the second stage Vg feeding branch comprises a resistor R B2 Resistance R B3 (ii) a Resistance R B2 Is connected with the port of the drain voltage Vd, and a resistor R B2 Second terminal and resistor R B3 Is connected to a first terminal of a resistor R B3 Is also connected with the grid electrode of the second stage common-gate transistor T2, and a resistor R B3 The second terminal of (a) is grounded.
4. The ultra-wideband low-noise structure based on the gate-source low-coupling structure as claimed in claim 3Acoustic amplifier, characterised in that the feed branch of the leakage voltage Vd comprises an inductance L 1 A feed capacitor C B3 (ii) a Inductor L 1 Is connected to the drain of a second common-gate transistor T2 via a transmission line TL3, an inductance L 1 The second end of the capacitor is connected with a Vd port, and a feed capacitor C B3 Is grounded, and a feed capacitor C B3 Is connected with the drain voltage Vd port.
5. The ultra-wideband low-noise amplifier based on the gate-source low-coupling structure as claimed in claim 4, wherein the ultra-wideband low-noise amplifier based on the gate-source low-coupling structure is made of a GaAs chip, and the GaAs chip comprises a bottom substrate material, an M1 metal layer deposited on the substrate material, an insulating layer deposited on the M1 metal layer, and an M2 metal layer deposited on the insulating layer.
6. The ultra-wideband low-noise amplifier based on the gate-source low-coupling structure as claimed in claim 5, wherein a connection line between the drain of the first-stage common-gate transistor T1 and the single-side source of the second-stage common-gate transistor T2, and a connection line of the gate of the second-stage common-gate transistor T2 are implemented by using an M1 metal layer, or implemented by using an M2 metal layer.
7. The ultra-wideband low-noise amplifier based on the gate-source low-coupling structure as claimed in claim 5, wherein a connection line between the drain of the first-stage common-gate transistor T1 and the single-side source of the second-stage common-gate transistor T2 is implemented by using one of a metal layer M1 and a metal layer M2, and a connection line for the gate of the second-stage common-gate transistor T2 is implemented by using the other of the metal layer M1 and the metal layer M2.
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| TWI306690B (en) * | 2006-01-27 | 2009-02-21 | Univ Nat Chiao Tung | Ultra broad-band low noise amplifier utilizing dual feedback technique |
| TWI327416B (en) * | 2006-10-27 | 2010-07-11 | Nat Univ Tsing Hua | Cascode low noise amplifier with a source coupled active inductor |
| CN106774614B (en) * | 2016-12-05 | 2017-11-14 | 电子科技大学 | A kind of low pressure difference linear voltage regulator with super transconductance structure |
| CN110149099A (en) * | 2019-06-27 | 2019-08-20 | 中国电子科技集团公司第五十四研究所 | A kind of low-noise amplifier based on the coupling of Cascode inductance dystopy |
| CN114070208A (en) * | 2022-01-14 | 2022-02-18 | 华南理工大学 | High-gain millimeter wave broadband ultra-low noise amplifier based on gallium nitride process |
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| CN101071312A (en) * | 2006-05-12 | 2007-11-14 | 苏州中科集成电路设计中心有限公司 | Common-source common-gate current mirror offset method and its bias circuit |
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