CN110149099A - A kind of low-noise amplifier based on the coupling of Cascode inductance dystopy - Google Patents
A kind of low-noise amplifier based on the coupling of Cascode inductance dystopy Download PDFInfo
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- CN110149099A CN110149099A CN201910564723.7A CN201910564723A CN110149099A CN 110149099 A CN110149099 A CN 110149099A CN 201910564723 A CN201910564723 A CN 201910564723A CN 110149099 A CN110149099 A CN 110149099A
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- 230000003321 amplification Effects 0.000 description 5
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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Abstract
The present invention relates to a kind of low-noise amplifiers based on the coupling of Cascode inductance dystopy, belong to technical field of radio frequency integrated circuits.By Cascode common source (penetrating), grid (base) transistor and four port inductive dystopy couplers are constituted the basic amplifying unit of the low-noise amplifier altogether, and wherein the first port of inductance dystopy coupler is connected to power supply, second port is connected to grid (base) pole of total grid (base) transistor, third port is connected to common source and (penetrates) source of transistor and (penetrates) pole, the 4th port and be connected to ground.On the one hand inductance dystopy coupler is introduced in amplifier circuit in low noise can reduce noise coefficient, prevent the generation of total reflection, and the laying out pattern that on the other hand can optimize chip reduces chip size.Present invention can apply to inhibit in the design of medium, high frequency the low noise amplifier chip to in-band noise.
Description
Technical field
The invention belongs to low-noise amplifier (Low Noise Amplifier, abbreviation LNA) skills in RF IC
Art field, more particularly, to a kind of low-noise amplifier based on the coupling of Cascode inductance dystopy.
Background technique
In a wireless communication system, reach the level of RF signals of receiver mostly in the microvolt order of magnitude, frequency-conversion processing it
It is preceding to need effectively to be amplified faint radiofrequency signal and keep required signal-to-noise ratio in output end.For this purpose, LNA is usual
It is widely used in receiver front end.LNA is in radio circuit in addition to amplification improves electricity from the received small-signal of antenna
Outside the entire gain on road, there are four important function: first, noise characteristic can be improved, improve signal-to-noise ratio；Second, make antenna
It is mutually isolated between local oscillator or frequency mixer, to avoid the reverse transmission signal as caused by local oscillator well
To the interference that circuit is formed, LNA is put between antenna and frequency mixer and hinders and limit signal to pass through antenna to aerial spoke
The possibility penetrated；Third improves the rejection ability to image frequency signal；4th, improve and improve the selectivity of circuit.
The index for measuring LNA performance has gain, noise coefficient, power consumption, the linearity etc..It is continuous with Low-power Technology
The continuous expansion of progressive and handheld communication application, power consumption also become the index of a big general concern.Gain is generally increased with voltage
Benefit (Voltage Gain) and power gain (Power Gain) Lai Hengliang.Usually use network S parameter S11And S22To measure LNA
Output and input matching, use S12And S21NF is generally used to measure isolation and forward voltage gain, the noise coefficient of LNA
(Noise Figure) is indicated, linearity 1dB compression point P1dBWith third order intermodulation IP3To indicate.
The circuit design requirements of LNA have low noise coefficient, enough ranges of linearity, suitable gain, input and output
The matching of impedance, good isolation between input and output.Usually there are also the designs of low power consumption to want in a mobile communication device
It asks.It should be noted that these above-mentioned indexs interknit, and it is even contradictory, in the design how using compromise
Principle, take into account indices, have a very important significance.
In addition, application scenarios can propose special requirement to some indexs of LNA circuit from application, it is therefore, full
The LNA circuit of these particular/special requirements of foot may have different framework, and common framework includes:
Single Cascode source negative feedback structure, the LNA circuit of this structure by Jung-Sun Goo, Hee-Tae Ahn,
" A Noise Optimization of the Donald J. Ladwig et al. in JSSC 2002, the 994-1002 pages
It is proposed in Technique for Integrated Low-Noise Amplifiers ".Since the LNA proposed is used only
One Cascode unit cooperates the use of source negative feedback technology and the outer high-quality-factor passive device of piece, in lower power consumption
Under show preferable matching and noiseproof feature.But depending on unduly for source negative feedback technology results in proposed LNA
Gain it is lower.
Grid input structure altogether, the LNA circuit of this structure is by YANG Ge-Liang, WANG Zhi-Gong, LI Zhi-
" Millimeter- wave low of the Qun et al. in J. Infrared Millim. Waves 2014, the 584-590 pages
It is proposed in power UWB CMOS common-gate low-noise amplifier ".The LNA uses grid in input stage
Sensibility technology optimizes the noiseproof feature of LNA, but this optimization is to deteriorate input matching as cost.In addition, should
It needs to install expensive outer member additional when LNA is used as monolithic, increase manufacturing cost.
Double feedback arrangements based on Cascode, the LNA circuit of the structure is by Yo-Sheng Lin, Chang- Zhi
" Analysis and Design of of Chen, the Hong-Yu Yang et al. in IEEE TMTT 2010, the 287-296 pages
It is proposed in a CMOS LNA With Dual-RLC-Branch Wideband Input Matching Network ".The program
In, the grid of the total gate transistor of Cascode unit introduces series peaking inductance, together with the shunt peaking network expansion of drain electrode
The gain bandwidth of LNA.But broadband matching network is excessively complicated and contains resistance device, so NF is not controlled effectively
System.
Noise cancellation structure, using the LNA circuit of the structure by F. Broccoleri, E. A. M. Klumperink,
With " Wideband CMOS Low-Noise Amplifier of the B. Nauta in IEEE JSSC 2004, the 275-281 pages
It is proposed in Exploiting Thermal Noise Canceling ".But noise cancellation structure has the limitation of its own, due to
Auxiliary branch can introduce additional noise, so noise cancellation technique is usually used in low frequency occasion.
In addition, separately there is a kind of scheme of noise cancellation " to be based on noise cancellation in patent of invention by Kang Kai, Yi Kai, Yu Yiming
It is proposed in the low-noise amplifier of structure " (201310747466.3).The program is become using grid input altogether in source electrode and drain electrode
Depressor coupled positive feedback realizes common-source stage noise attenuation.But the structure, which introduces positive feedback, potential risk of instability, especially
It is, for how to prevent the generation of the risk, not provide corresponding measure in patent in the higher workplace of frequency.
Summary of the invention
Based on background above technology, in order to solve the problems, such as that the noise suppressed of high-frequency low-noise acoustic amplifier does not introduce not simultaneously again
Ballast, the present invention propose a kind of low-noise amplifier based on the coupling of Cascode inductance dystopy, can be applied to medium, high frequency
The amplification of signal, and at the same time having good matching and noiseproof feature.
To achieve the goals above, the technical solution adopted by the present invention are as follows:
A kind of low-noise amplifier based on the coupling of Cascode inductance dystopy, including input, output end, the first power supply, second
Power supply, the first biasing circuit, the second biasing circuit and two-stage Cascode inductance dystopy amplifier circuit, two-stage Cascode electricity
Feel and is equipped with blocking condenser between dystopy amplifier circuit；Every grade of Cascode inductance dystopy amplifier circuit includes
The basic amplifying unit of Cascode and dystopy coupler；The total grid that the basic amplifying unit of Cascode is connected by series stack/
Based transistor and common source/and penetrate transistor composition, wherein transistor is penetrated in the source/emitter-base bandgap grading is connected to common source/of grid/based transistor altogether
Leakage/collector；The dystopy coupler of first order Cascode inductance dystopy amplifier circuit includes the first inductor and the second electricity
Sensor, the dystopy coupler of second level Cascode inductance dystopy amplifier circuit include third inductor and the 4th inductor,
Second inductor and third inductor have centre cap；
In first order Cascode inductance dystopy amplifier circuit, grid/base stage of common source/penetrate transistor is connected to the first inductance
One end of device, the other end of the first inductor are connected with the input terminal；First biasing circuit is connected in parallel on the input terminal and
Between two power supplys；The leakage of grid/based transistor/collector connects one end of the second inductor altogether, and the other end of the second inductor connects
It is connected to the first power supply, the centre cap of the second inductor is connected with one end of the blocking condenser, blocking condenser
The other end and the common source in the Cascode inductance dystopy amplifier circuit of the second level/grid/base stage for penetrating transistor be connected；
In the Cascode inductance dystopy amplifier circuit of the second level, the leakage of grid/based transistor/collector connects third inductance altogether
The other end of one end of device, third inductor is connected to the first power supply by a resistance, and the centre cap of third inductor connects
It is connected to the output end；Second biasing circuit is connected in parallel on common source in the Cascode inductance dystopy amplifier circuit of the second level/penetrate crystalline substance
The grid of body pipe/between base stage and second source.
The present invention compared with prior art, has the following beneficial effects:
1) it can improve and grid (base) transistor is total to using the matching deterioration of grid (base) pole series peaking bring based on Cascode structure
Problem.
2) non-coupled structure is compared, structure proposed by the invention has lower noise coefficient.
3) after the dystopy inductance connecting with Cascode unit uses Coupling Design, the chip area of chip will be smaller.
Detailed description of the invention
Fig. 1 is that a kind of circuit of the low-noise amplifier based on the coupling of Cascode inductance dystopy is former in the embodiment of the present invention
Reason figure.
Fig. 2 be in the embodiment of the present invention it is a kind of based on Cascode inductance dystopy coupling low-noise amplifier NF not
With the simulation curve comparison diagram under coupling condition.
Fig. 3 is a kind of input of the low-noise amplifier based on the coupling of Cascode inductance dystopy in the embodiment of the present invention
With parameter S11Simulation curve comparison diagram under different coupling conditions.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
A kind of amplifier circuit in low noise based on the coupling of cascade inductance dystopy mainly includes two-stage Cascode electricity
Feel dystopy amplifier circuit and biasing circuit.Wherein, two-stage Cascode inductance dystopy amplifier circuit is all by Cascode
Substantially amplifying unit and the inductance dystopy coupler composition comprising four ports.In Cascode inductance dystopy amplifier circuit
Total grid (base) transistor that is connected by series stack of Casode unit and common source (penetrate) transistor and form, specific connection relationship
Are as follows: the source of grid (base) transistor (penetrates) pole and is connected to leakage (current collection) pole that common source (penetrates) transistor altogether.Cascode inductance dystopy coupling
Close that four port inductive dystopy coupler its first port in amplifying circuit are connected to the first power supply, second port is connected to total grid
Grid (base) pole, third end of (base) transistor, which are connected to common source, (to be penetrated) source of transistor and (penetrates) pole, the 4th port and be connected to ground.Matching
Circuit the first inductor by being made of, input of the one end of the first inductor as LNA, and the other end connects first order Cascode
Common source (penetrates) grid (base) pole of transistor in inductance dystopy amplifier circuit.First order Cascode inductance dystopy coupling amplification
Leakage (current collection) pole of total grid (base) transistor, which is passed through, in circuit is connected to the first power supply with centre tapped second inductor.Center
Output of the tap as first order Cascode inductance dystopy amplifier circuit.First order Cascode inductance dystopy coupling amplification
The biasing circuit of circuit is between output end and second source.
Second level Cascode inductance dystopy amplifier circuit and first order Cascode inductance dystopy amplifier circuit
Difference be: leakage (current collection) pole of grid (base) transistor and the altogether in the Cascode inductance dystopy amplifier circuit of the second level
Third of having connected between one power supply inductor and a resistance.The biasing of second level Cascode inductance dystopy amplifier circuit
Circuit is located at grid (base) pole and the second source that common source in the Cascode inductance dystopy amplifier circuit of the second level (penetrates) transistor
Between.
First order Cascode inductance dystopy amplifier circuit and second level Cascode inductance dystopy amplifier circuit
It is attached by a coupled capacitor, i.e. the centre cap of the second inductance and second level Cascode inductance dystopy coupling amplification
The grid (base) that common source (penetrates) transistor in circuit are extremely connected.
Specifically, as shown in Figure 1, a kind of circuit diagram of the low-noise amplifier based on the coupling of Cascode inductance dystopy.
The low-noise amplifier includes: a capacitorC, two Cascode units (include M11、M12、M21、M22Four transistors, it is brilliant
The meaning such as the M in figure of each pin of body pipexyShown in pin schematic diagram), two dystopy couplersL C1、L C2, two biasing circuits
Bias1, Bias2, three inductorsL 11、L 12、L 21(whereinL 12、L 21For with centre tapped three port devices).
Wherein, the input terminal and inductor of LNAL 11One end be connected, inductorL 11The other end is connected to transistor M12's
Grid (base) pole.Transistor M12Leakage (current collection) pole be connected to transistor M11Source (penetrate) pole.Electricity in the preferred embodiment of the present invention
Sense dystopy coupler uses the coiling coupled modes of high coupling coefficient to realize to ensure that designed LNA can satisfy medium, high frequency
The requirement of rate work, inductance dystopy couplerL C1Four ports be coupled with power supplyV DC, transistor M11Grid (base) pole, crystalline substance
Body pipe M12Source (penetrate) pole and ground.Biasing circuit Bias1 is connected to the input terminal and power supply of LNAV BBetween be transistor M12It provides
Biasing.InductorL 12It connects in the first power supply and the first transistor M11Leakage (current collection) pole between, centre cap is connected to capacitor
DeviceCOne end.CapacitorCThe other end be connected to transistor M22Grid (base) pole.Transistor M22Leakage (current collection) pole be connected to
Transistor M21Source (penetrate) pole.Inductance dystopy couplerL C2Four ports be coupled with power supplyV DC, transistor M21Grid (base)
Pole, transistor M22Source (penetrate) pole and ground.Biasing circuit Bias2 is connected to transistor M22Grid (base) pole and power supplyV BBetween be
Transistor M22Biasing is provided.ResistorR 21With inductorL 21Series connection, resistorR 21One end be connected to power supplyV DC, inductorL 21
An end be connected to transistor M21Leakage (current collection) pole.InductorL 21Centre cap draw output end as LNA.
In view of the non-ideal characteristic of coiling coupling, by inductance dystopy couplerL C1With inductance dystopy couplerL C2Coupling
Collaboration number is respectively set tok 1=k 2=0 Hek 1=k 2=0.8 two kind of situation is emulated.
Fig. 2 is the comparison diagram of NF simulation curve in above-mentioned two situations；From simulation result it can be seen that working ask 1=k 2=0 is
When not coupling generation, the noise coefficient of LNA is greater than 3dB in working band；Whenk 1=k 2=0.8 i.e. normal coupling when, LNA's
Noise coefficient reduces 0.3dB in working band, and there are about the promotions of 10% noiseproof feature.
Fig. 3 is to input match parameter S in above-mentioned two situations11Simulation curve comparison diagram under different coupling conditions；
From simulation result it can be seen that working ask 1=k 2=0 is the input match parameter S of LNA when not having coupling11It is big in working band
In 0dB i.e. be totally reflected the case where；Whenk 1=k 2=0.8 is the input match parameter S of LNA when normally coupling11In working band
It is interior to be less than -4dB, the occurrence of having prevented total reflection.
All of above result is in supply voltageV DC=1.2V,V BEmulation obtains under=0.7V.Above-mentioned simulation result confirms
A kind of amplifier circuit in low noise based on the coupling of Cascode inductance dystopy provided by the present invention is effective.
Although the present invention is shown and has been described by reference to its certain preferred embodiment, those skilled in the art
Member is it should be understood that without departing from the spirit and scope of the present invention, form being carried out to it and the various of details being repaired
Change.
Claims (1)
1. it is a kind of based on Cascode inductance dystopy coupling low-noise amplifier, which is characterized in that including input, output end,
First power supply, second source, the first biasing circuit, the second biasing circuit and two-stage Cascode inductance dystopy amplifier circuit,
Blocking condenser is equipped between two-stage Cascode inductance dystopy amplifier circuit；Every grade of Cascode inductance dystopy coupling is put
Big circuit includes the basic amplifying unit of Cascode and dystopy coupler；The basic amplifying unit of Cascode is by series stack
Connection total grid/based transistor and common source/penetrate transistor composition, wherein altogether grid/based transistor source/emitter-base bandgap grading be connected to common source/
Penetrate leakage/collector of transistor；The dystopy coupler of first order Cascode inductance dystopy amplifier circuit includes the first inductance
Device and the second inductor, the dystopy coupler of second level Cascode inductance dystopy amplifier circuit include third inductor and
4th inductor, the second inductor and third inductor have centre cap；
In first order Cascode inductance dystopy amplifier circuit, grid/base stage of common source/penetrate transistor is connected to the first inductance
One end of device, the other end of the first inductor are connected with the input terminal；First biasing circuit is connected in parallel on the input terminal and
Between two power supplys；The leakage of grid/based transistor/collector connects one end of the second inductor altogether, and the other end of the second inductor connects
It is connected to the first power supply, the centre cap of the second inductor is connected with one end of the blocking condenser, blocking condenser
The other end and the common source in the Cascode inductance dystopy amplifier circuit of the second level/grid/base stage for penetrating transistor be connected；
In the Cascode inductance dystopy amplifier circuit of the second level, the leakage of grid/based transistor/collector connects third inductance altogether
The other end of one end of device, third inductor is connected to the first power supply by a resistance, and the centre cap of third inductor connects
It is connected to the output end；Second biasing circuit is connected in parallel on common source in the Cascode inductance dystopy amplifier circuit of the second level/penetrate crystalline substance
The grid of body pipe/between base stage and second source.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106823A (en) * | 2019-11-27 | 2020-05-05 | 杭州电子科技大学 | Millimeter wave on-off keying modulator with high isolation and stable input matching |
| CN113708733A (en) * | 2021-08-27 | 2021-11-26 | 电子科技大学 | Reflection amplification device based on quasi-annular device |
| CN115296621A (en) * | 2022-08-15 | 2022-11-04 | 电子科技大学 | Ultra-wideband low-noise amplifier based on gate-source low-coupling structure |
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| US20120032743A1 (en) * | 2010-08-06 | 2012-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low-noise amplifier with gain enhancement |
| CN104779919A (en) * | 2015-05-04 | 2015-07-15 | 中国电子科技集团公司第五十四研究所 | Self-biased ultra wideband low-power-consumption low-noise amplifier (LNA) |
| CN106330099A (en) * | 2015-06-30 | 2017-01-11 | 展讯通信（上海）有限公司 | Radio frequency front end circuit |
| CN107078701A (en) * | 2014-12-04 | 2017-08-18 | 高通股份有限公司 | The amplifier of inductor with triple couplings |
| CN209844921U (en) * | 2019-06-27 | 2019-12-24 | 中国电子科技集团公司第五十四研究所 | Low-noise amplifier based on Cascode inductance ectopic coupling |
-
2019
- 2019-06-27 CN CN201910564723.7A patent/CN110149099A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20120032743A1 (en) * | 2010-08-06 | 2012-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low-noise amplifier with gain enhancement |
| CN107078701A (en) * | 2014-12-04 | 2017-08-18 | 高通股份有限公司 | The amplifier of inductor with triple couplings |
| CN104779919A (en) * | 2015-05-04 | 2015-07-15 | 中国电子科技集团公司第五十四研究所 | Self-biased ultra wideband low-power-consumption low-noise amplifier (LNA) |
| CN106330099A (en) * | 2015-06-30 | 2017-01-11 | 展讯通信（上海）有限公司 | Radio frequency front end circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106823A (en) * | 2019-11-27 | 2020-05-05 | 杭州电子科技大学 | Millimeter wave on-off keying modulator with high isolation and stable input matching |
| CN111106823B (en) * | 2019-11-27 | 2023-04-11 | 杭州电子科技大学 | Millimeter wave on-off keying modulator with high isolation and stable input matching |
| CN113708733A (en) * | 2021-08-27 | 2021-11-26 | 电子科技大学 | Reflection amplification device based on quasi-annular device |
| CN115296621A (en) * | 2022-08-15 | 2022-11-04 | 电子科技大学 | Ultra-wideband low-noise amplifier based on gate-source low-coupling structure |
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