CN115220217A - Electromagnetic MEMS micro-mirror and preparation method thereof - Google Patents
Electromagnetic MEMS micro-mirror and preparation method thereof Download PDFInfo
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- CN115220217A CN115220217A CN202211054408.8A CN202211054408A CN115220217A CN 115220217 A CN115220217 A CN 115220217A CN 202211054408 A CN202211054408 A CN 202211054408A CN 115220217 A CN115220217 A CN 115220217A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/085—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by electromagnetic means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/042—Micromirrors, not used as optical switches
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Abstract
The invention relates to the technical field of micro electro mechanical systems, in particular to an electromagnetic Micro Electro Mechanical System (MEMS) micro mirror and a preparation method thereof; the MEMS micro-mirror is arranged on a base when working, is adhered to the base and is arranged in a fixed magnetic field, the MEMS structure part comprises at least one device structure layer made of monocrystalline silicon, the device structure layer comprises a movable mirror surface, a first torsion shaft, a second torsion shaft, a movable frame, a fixed frame and a metal layer, the coil part drives the movable mirror surface and the movable frame to respectively generate torsion by taking the first torsion shaft and the second torsion shaft as axes after alternating current is introduced, the movable mirror surface moves two-dimensionally relative to the fixed frame, the structure of the vibrating mirror is improved, the number of turns of the coil is obviously increased by arranging multilayer coil stacking, the driving force is effectively increased, the coil wire diameter of unit length is large, the overall resistance is small, and the heat power consumption during working is small.
Description
Technical Field
The invention relates to the technical field of micro electro mechanical systems, in particular to an electromagnetic Micro Electro Mechanical System (MEMS) micro mirror and a preparation method thereof.
Background
MEMS (micro electro mechanical Systems, micro electro mechanical system) galvanometers are optical scanning mirrors manufactured based on MEMS technology, and have wide applications in the fields of optical communication, laser micro projection, laser radar, medical imaging, and the like. The main driving modes of the MEMS galvanometer comprise: the MEMS galvanometer driven by static electricity is generally compact in structure, but the driving force is small, and a high driving voltage or a vacuum packaging mode or the like is needed to realize a large optical scanning angle, the electrothermal driving is a driving mode based on material thermal deformation, has the advantage of large driving force, but is slow in response speed and not suitable for application scenes of high-speed scanning, the piezoelectric driving is a driving mode based on the inverse piezoelectric effect of materials and has the characteristics of large driving force and high response speed, but the piezoelectric material film is difficult to prepare, the inferior piezoelectric film greatly limits the performance of the piezoelectric driving micromirror, and compared with the piezoelectric driving mode, the driving force and the driving stroke of the electromagnetic driving galvanometer are larger, and the response speed is high, so that the requirements of a laser radar on large-mirror surface and large-scanning-angle galvanometers are met.
The main factors affecting the electromagnetic driving force include: magnetic field intensity, current amplitude and drive coil turn, in actual design, be subject to material property and device size requirement, magnetic field intensity often is difficult to improve, promote drive current's amplitude and can increase electromagnetic drive power, but also can increase the consumption of device, simultaneously, the heat that the drive coil generates heat and accumulates also can reduce the life of device, consequently, under the condition that keeps the coil resistance of unit length unchangeable basically, realize the coil arrangement of higher density as far as possible, be the key of promoting the drive performance of electromagnetic drive galvanometer.
The prior patent technology:
patent CN110456500A discloses a mechanical scanning mirror and a laser radar. The scanning mirror structure is formed by assembling machined metal parts, the driving coil is formed by winding a multi-turn enameled coil, the number of turns of the driving coil is increased by the technical scheme, but the scanning parts are more in machining procedures and complex in assembly, and the metal torsion beam also faces to the problems of fatigue fracture and short service life after working for a long time.
Patent CN102967934B discloses an electromagnetic driving galvanometer based on multilayer coil stacking, wherein the galvanometer structure is prepared by a silicon-based MEMS process, and the coil is prepared by an electroplating process, and by arranging a polyimide dielectric layer between coil layers, the stacking of two layers of coils can be realized, and the coil density in unit area is increased, but if the technical scheme tries to realize the stacking of multilayer (more than 3 layers) of coils, the difficulty of the preparation method is greatly increased.
Disclosure of Invention
The invention aims to provide an electromagnetic micro-electromechanical system (MEMS) micro-mirror and a preparation method thereof, and aims to solve the problems of insufficient reliability of devices and higher difficulty of the preparation method in the prior art.
In order to achieve the above object, the present invention provides an electromagnetic MEMS micro-mirror, which is composed of a MEMS structure part and a coil part, and is disposed on a base, adhered to the base, and disposed in a fixed magnetic field during operation,
the MEMS structure part comprises at least one device structure layer made of monocrystalline silicon, the device structure layer comprises a movable mirror surface, a first torsion shaft, a second torsion shaft, a movable frame, a fixed frame and a metal layer, the first torsion shaft is connected with the movable mirror surface and the movable frame, the second torsion shaft is connected with the movable frame and the fixed frame, the first torsion shaft and the second torsion shaft are orthogonally arranged, the metal layer is arranged on the surface of the movable mirror surface, and the metal layer is made of a high-reflectivity material, such as gold and the like;
the coil part is formed by winding an enameled coil under the assistance of a die, and the enameled coil is bonded with the MEMS structure part through organic adhesion after self-shaping is realized through hot air or chemical reagents.
When the vibrating mirror device works, the vibrating mirror device is placed on a base of the whole shell and is fixed through organic glue. In a fixed magnetic field arranged in the shell of the whole machine, alternating current is introduced into the metal coil layer to generate driving force, namely the movable mirror surface and the movable frame respectively use the first torsion shaft and the second torsion shaft as shafts to generate torsion, and the movable mirror surface moves two-dimensionally relative to the fixed frame because the first torsion shaft and the second torsion shaft are arranged orthogonally.
In this application, the coil part can realize that multilayer coil piles up, and the number of piles has obvious promotion than prior art scheme, also can show increase coil turn, increase drive power.
The movable frame is rectangular, square, circular, oval or polygonal in shape, the first torsion shaft and the second torsion shaft are at least one of a straight beam structure, a ring beam and a folding beam, and the mirror surface is square, circular, oval, rectangular or polygonal in shape.
The movable frame is further provided with a plurality of etching grooves, and the etching grooves are formed in the front face or the back of the movable frame and are bonded with the coil portion through organic glue.
The etched groove is arranged, so that the mass can be effectively reduced
Wherein J is the moment of inertia, f is the resonance frequency, k is the stiffness coefficient, after the mass is reduced, the moment of inertia J is reduced, if the resonance frequency f is kept unchanged, the stiffness coefficient k is reduced in equal proportion, the driving force required for realizing the same deflection angle is reduced, under the same driving condition, a larger optical scanning angle can be realized, and meanwhile, because the resonance frequency f is kept unchanged, the mechanical reliability of the device is not deteriorated due to the reduction of the stiffness coefficient of the torsion shaft. If the stiffness coefficient k is kept unchanged, the resonant frequency f is increased, the mechanical reliability of the device is improved, the device is better in performance when the common mechanical problems such as vibration and impact are faced, when the etching groove is arranged on the front face of the movable frame, the coil part can be adhered to the movable frame, when organic adhesion is carried out, part of the adhesive can flow into and fill the etching groove to improve the adhesion strength of the coil part, and when the coil part is adhered to the back of the movable frame, the non-metal area on the front face of the MEMS structure part can be subjected to additional etching treatment to form black silicon, the reflectivity is reduced, and stray light caused by silicon surface reflection when the device is applied is avoided.
The invention also provides a preparation method of the electromagnetic MEMS micro-mirror, which is applied to the preparation of the electromagnetic MEMS micro-mirror, and the preparation method of the electromagnetic MEMS micro-mirror comprises the following steps:
s1: preparing a first wafer, and performing conventional pretreatment, wherein the conventional pretreatment comprises cleaning and drying, and the first wafer is a monocrystalline silicon wafer or an SOI wafer;
s2: forming a metal layer on the surface of the first wafer through an evaporation or sputtering process, wherein the metal layer comprises a mirror reflection layer;
s3: after the front protection is finished, etching the first wafer through a dry etching process to form a device structure layer, and preparing an MEMS structure part by using the device structure layer;
s4: and bonding the pre-prepared coil part and the MEMS structure part into a whole through organic bonding, thereby completing the preparation of the electromagnetic driving vibrating mirror.
The first wafer can be a monocrystalline silicon wafer, and can also be other types of wafers including a single-layer SOI wafer
According to the electromagnetic MEMS micro-mirror and the preparation method, on the basis of the prior art, the structure of the vibrating mirror is improved, the number of turns of the coil is obviously increased by arranging the multilayer coil stack, the driving force is effectively increased, the coil wire diameter of unit length is large, the overall resistance is small, namely, the thermal power consumption during working is small, the preparation process is provided, the preparation process is improved, the electromagnetic MEMS micro-mirror is prepared in a self-adhesion type enameled coil winding mode, the difficulty of the preparation method is effectively reduced, and the problem of reliability of devices caused by the difference of thermal expansion coefficients of materials can be avoided due to temperature change in the process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic axial structure diagram of the MEMS structure portion and the coil portion of an electromagnetic MEMS micro-mirror according to the present invention.
Fig. 2 is a schematic cross-sectional structural diagram of a device structure layer of an electromagnetic MEMS micro-mirror according to the present invention.
Fig. 3 is a schematic diagram of a step S1 of a method for fabricating an electromagnetic MEMS micro-mirror according to the present invention.
Fig. 4 is a schematic diagram of a step S2 of a method for fabricating an electromagnetic MEMS micro-mirror according to the present invention.
Fig. 5 is a schematic diagram of the step S3 of the method for fabricating an electromagnetic MEMS micro-mirror according to the present invention.
Fig. 6 is a schematic diagram of a step S4 of a method for fabricating an electromagnetic MEMS micro-mirror according to the present invention.
FIG. 7 is a diagram illustrating a second exemplary embodiment of an electromagnetic MEMS micro-mirror according to the present invention.
Fig. 8 is a schematic structural diagram of an etched trench disposed on a front surface of a third movable frame in a second embodiment of the electromagnetic MEMS micro-mirror according to the present invention.
Fig. 9 is a schematic diagram of a first wafer of a manufacturing method of a third embodiment of an electromagnetic MEMS micro-mirror according to the present invention.
FIG. 10 is a diagram of a fourth embodiment of an electromagnetic MEMS micro-mirror according to the present invention.
FIG. 11 is a structural diagram of a first backside reinforcement structure of a fourth embodiment of an electromagnetic MEMS micro-mirror according to the present invention.
Fig. 12 is a structural diagram of a second backside reinforcement structure formed by back pre-etching the first wafer of the fifth embodiment of the electromagnetic MEMS micro-mirror according to the present invention.
Fig. 13 is a schematic structural diagram of a sixth metal layer formed on a surface of a first wafer of a fifth embodiment of an electromagnetic MEMS micro-mirror by evaporation or sputtering according to the present invention.
FIG. 14 is a diagram of a sixth MEMS structure part of the fifth embodiment of the electromagnetic MEMS micro-mirror according to the present invention.
FIG. 15 is a diagram of a sixth electromagnetically actuated galvanometer of a fifth embodiment of the electromagnetic MEMS micro-mirror in accordance with the present invention.
FIG. 16 is a diagram illustrating a sixth exemplary embodiment of an electromagnetic MEMS micro-mirror according to the present invention with a coil side flush with a surface of a first wafer.
FIG. 17 is a schematic diagram illustrating a coil surface and a first wafer surface of a sixth embodiment of an electromagnetic MEMS micro-mirror according to the present invention under a protruding condition.
FIG. 18 is a diagram of a seventh movable frame with an etching trench formed at an edge thereof according to a sixth embodiment of the electromagnetic MEMS micro-mirror of the present invention.
FIG. 19 is a schematic structural diagram of an etching trench disposed in a center region of an eighth movable frame of a seventh embodiment of an electromagnetic MEMS micro-mirror according to the present invention.
FIG. 20 is a diagram of an etching trench of a seventh embodiment of an electromagnetic MEMS micro-mirror according to the present invention disposed at an edge of an eighth movable frame.
Fig. 21 is a schematic structural view of the eighth coil half-covered etched groove located in the central region of the eighth movable frame of the seventh embodiment of the electromagnetic MEMS micro-mirror according to the present invention.
FIG. 22 is a cross-sectional view of a coil portion with a bottom portion conforming to the contour of the etching chamber and a top portion conforming to the contour of the eighth movable frame in accordance with an eighth embodiment of the electromagnetic MEMS micro-mirror according to the present invention.
FIG. 23 is a diagram of a ninth embodiment of an electromagnetic MEMS micro-mirror according to the present invention, wherein an etched trench is located in a center region of a tenth movable frame.
FIG. 24 is a diagram of an etched trench at the edge of a tenth movable frame in the ninth embodiment of the electromagnetic MEMS micro-mirror according to the present invention.
FIG. 25 is a schematic view showing that the tenth coil part is covered by a half when the etching trench of the electromagnetic MEMS micro-mirror is located in the center area of the tenth movable frame according to the present invention.
Fig. 26 is a schematic structural view of an electrical connection layer of a ninth embodiment of an electromagnetic MEMS micro-mirror provided by the present invention located on an upper surface of an eleventh movable frame.
Fig. 27 is a schematic structural view of the electromagnetic MEMS micro-mirror according to the ninth embodiment of the present invention with the electrical connection layers on the upper and lower surfaces of the eleventh movable frame.
FIG. 28 is a schematic step diagram illustrating a method for fabricating an electromagnetic MEMS micro-mirror according to the present invention.
100-galvanometer device, 110-MEMS structural part, 120-coil part, 111-movable mirror, 112-first torsion shaft, 113-movable frame, 114-fixed frame, 115-metal layer, 116-second torsion shaft, 130-organic glue, 140-base, 201-first wafer, 300-third electromagnetic driving galvanometer, 313-third movable frame, 320-third coil part, 410-fourth MEMS structural part, 440-protective layer, 516-first back reinforcing structure, 600-sixth electromagnetic driving galvanometer, 610-sixth MEMS structural part, 615-sixth metal layer, 616-second back reinforcing structure, 620-sixth coil part, 713-seventh movable frame, 720-seventh coil part, 813-eighth movable frame, 820-eighth coil part, 8201-upper eighth coil part, 8202-lower eighth coil, 1020-tenth movable frame, 8202-tenth coil part, 1115-eleventh coil part, 1113-eleventh coil part, 1117-movable layer and TSV structure.
Detailed Description
The first embodiment:
referring to fig. 1-6 of the drawings,
the present invention provides an electromagnetic MEMS micro-mirror, which is composed of a MEMS structure part 110 and a coil part 120, the electromagnetic MEMS micro-mirror is placed on a base 140 during operation, is adhered to the base 140, and is arranged in a fixed magnetic field,
the MEMS structure part 110 includes at least one device structure layer made of single crystal silicon, the device structure layer includes a movable mirror 111, a first torsion axis 112, a second torsion axis 116, a movable frame 113, a fixed frame 114, and a metal layer 115, the first torsion axis 112 connects the movable mirror 111 and the movable frame 113, the second torsion axis 116 connects the movable frame 113 and the fixed frame 114, and the first torsion axis 112 and the second torsion axis 116 are arranged orthogonally, the metal layer 115 is disposed on the surface of the movable mirror 111, and the metal layer 115 is made of a high-reflectivity material;
the movable frame 113 shown in the first embodiment is located outside the fixed frame 114, and in other embodiments, the movable frame 113 may be disposed inside the fixed frame 114 according to design requirements. The relative position relationship of the device structures constituting the MEMS structure portion 110 is not limited to the embodiment of the present invention.
The coil part 120 is formed by winding an enameled coil with the aid of a mold, and the enameled coil is bonded to the MEMS structure part 110 by organic adhesion after self-molding by hot air or chemical reagents.
In operation, the galvanometer device 100 is placed on the base 140 of the whole machine housing and fixed by organic glue. In a fixed magnetic field arranged in the casing of the whole machine, alternating current is introduced to the metal coil layer to generate a driving force, that is, the movable mirror 111 and the movable frame 113 respectively generate torsion by taking the first torsion shaft 112 and the second torsion shaft 116 as axes, and the movable mirror 111 performs two-dimensional motion relative to the fixed frame 114 because the first torsion shaft 112 and the second torsion shaft 116 are orthogonally arranged. In the present application, the coil portion 120 can realize stacking of multiple layers of coils, and the number of layers is obviously improved compared with the prior art, that is, the number of turns of the coil can be significantly increased, and the driving force is increased.
Further, the shape of the movable frame 113 is rectangular, square, circular, oval or polygonal, the first torsion shaft 112 and the second torsion shaft 116 are at least one of a straight beam structure, a ring beam and a folded beam, the shape of the mirror surface is square, circular, oval, rectangular or polygonal, and a designer can design the shape of a device according to needs, not only limited to the figure.
Referring to fig. 3 to fig. 6, the present invention further provides a manufacturing process of an electromagnetic MEMS micro-mirror, which is applied to manufacture the electromagnetic MEMS micro-mirror,
the manufacturing process of the electromagnetic MEMS micro-mirror comprises the following steps:
s1: preparing a first wafer 201 and performing conventional pretreatment, wherein the conventional pretreatment comprises cleaning and drying, and the first wafer 201 is a monocrystalline silicon wafer or an SOI wafer;
s2: forming a metal layer 115 on the surface of the first wafer 201 through an evaporation or sputtering process, wherein the metal layer 115 comprises a mirror reflection layer;
s3: after the front protection is finished, etching the first wafer 201 by a dry etching process to form a device structure layer, and preparing the MEMS structural part 110 by using the device structure layer;
s4: the coil part 120 prepared in advance and the MEMS structure part 110 are integrally bonded by organic bonding, and thus the preparation of the electromagnetically driven galvanometer can be completed.
Referring to fig. 3 to 6, the first wafer 201 is prepared and subjected to conventional pretreatment including cleaning, drying, etc. The first wafer 201 may be a single-crystal silicon wafer, or may be another type of wafer including a single-layer SOI wafer, and the single-crystal silicon wafer is described as an example in the present application.
As shown in fig. 4, a metal layer 115 is formed on the surface of a single crystal silicon wafer by an evaporation or sputtering process, and the metal layer 115 includes a specular reflection layer.
As shown in fig. 5, the single crystal silicon wafer is etched by a dry etching process to form a device structure including the movable mirror 111, the torsion shaft, and the movable frame 113, and the step of preparing the metal layer 115 may be performed after the dry etching process.
As shown in fig. 6, the coil portion 120 prepared in advance and the MEMS structure portion 110 are integrally bonded by organic bonding, and the electromagnetic driving galvanometer is completed.
In the embodiment, the manufacturing method of the electromagnetic MEMS micro-mirror is extremely simple and mature in processing process, the MEMS structure can be manufactured only by 1-2 times of mature etching process and 1 time of metal deposition process, the mature coil winding is combined, the whole process difficulty is small, the cost is low, the development speed is high, the rapid output iteration of products is facilitated, the mechanical structure of the device is manufactured through the MEMS processing technology, the processing precision is high, large-batch stable repeated production can be achieved, the mechanical performance of the silicon material is excellent, the reliability of the device is good, the service life is long, the MEMS structure part and the coil part are manufactured respectively, and the device is integrally formed through organic adhesion after the manufacturing is finished.
Second embodiment:
on the basis of the first embodiment, please refer to fig. 7 and 8,
the movable frame 113 is further provided with a plurality of etching grooves, which are opened on the front or back of the movable frame 113 and are bonded to the coil part 120 by an organic adhesive 130.
The present embodiment is different from the first embodiment in that the third electromagnetically driven galvanometer 300 shown in fig. 7 is provided with a plurality of densely arranged small-sized etching grooves to perform mass reduction processing, and a device structure and mass reduction are simultaneously formed by one-step etching by designing the opening size of an etching region and using the load effect of etching.
As shown in fig. 8, when a plurality of the etching grooves are provided on the front surface of the third movable frame 313, the third coil part 320 may be adhered to the third movable frame 313, and since the front surface of the third movable frame 313 is provided with many small-sized etching grooves densely arranged, when organic adhesion of the third coil part 320 is performed, a part of the adhesive may flow into and fill the etching grooves, thereby greatly enhancing the adhesion strength of the third coil part 320;
alternatively, when the etching groove is disposed on the back of the third movable frame 313, the third coil part 320 may be selectively bonded to the back of the third movable frame 313.
When the etching groove is disposed on the back of the third movable frame 313, the non-metal region on the front surface of the MEMS structure portion 110 may be subjected to additional etching to form black silicon, so as to reduce the reflectivity and avoid stray light caused by the reflection of the silicon surface when the device is applied.
The third embodiment:
in addition to the first embodiment, please refer to fig. 9,
compared with the steps of the manufacturing process, the processing of the first wafer 201 is the same as the steps S1 to S2, but the difference is that the opening of the etching groove is designed subsequently, the area needing to be etched through is designed to have a large opening size D, the area not etched through is designed to have a small opening size D (D < D), a device structure with reduced mass can be formed through a one-step dry etching process, the fourth MEMS structure part 410 is manufactured, and the coil part 120 and the fourth MEMS structure part 410 which are manufactured in advance are bonded into a whole through organic glue, so that the manufacturing of the electromagnetic driving galvanometer is completed.
The front surface of the first wafer 201 is provided with a protective layer 440 in the processing process, the protective layer 440 is used for protecting the front surface structure and is used as an etching stop layer, and the protective layer 440 is at least one of a photoresist subjected to drying and hardening, a dielectric layer, a protective layer formed by stacking and combining a plurality of materials, and other wafers subjected to temporary bonding.
The method comprises the following specific steps:
s11: preparing a first wafer 201 and performing conventional pretreatment, wherein the conventional pretreatment comprises cleaning and drying, and the first wafer 201 is a monocrystalline silicon wafer or an SOI wafer;
s21: forming a metal layer 115 on the surface of the first wafer 201 through an evaporation or sputtering process, wherein the metal layer 115 comprises a mirror reflection layer;
s31: after the front surface protection is completed, etching the first wafer 201 through a dry etching process to form a device structure layer, and preparing the MEMS structure portion 110 by using the device structure layer, wherein a large opening size D is designed in a region needing to be etched through, a small opening size D is designed in a region not to be etched through (D < D), and a device structure with reduced mass can be formed through a one-step dry etching process;
s41: the fourth MEMS structure portion 410 is completely prepared, and the coil portion 120 and the fourth MEMS structure portion 410 are integrally bonded by organic bonding, so as to complete the preparation of the electromagnetically driven galvanometer.
The fourth embodiment:
on the basis of the first embodiment, please refer to fig. 10 and 11,
compared with the first embodiment, the difference is that the back of the electromagnetic driving galvanometer of the embodiment is patterned through an additional etching process, so that the mass of the movable structure is reduced. Meanwhile, the back of the patterned device forms a reinforced structure, the mass of the movable structure is reduced, the integral rigidity of the device is kept unchanged,
the patterned first back reinforcing structure 516 may be designed into different patterns according to the requirement,
in the electromagnetically driven galvanometer shown in fig. 10, a pattern design with a central area reserved and an edge area removed is adopted at the back of the movable frame 113.
In the electromagnetically driven galvanometer shown in fig. 11, the back of the movable frame 113 is patterned by removing a central region and leaving an edge region.
In some other embodiments, the movable frame 113 may be patterned to achieve a more secure attachment of the coil frame.
Fifth embodiment:
in addition to the first embodiment, please refer to fig. 12 to 15,
the process flow of the pre-treatment of the first wafer 201, the preparation of the metal layer 115, the etching of the device structure, and the coil adhesion in this embodiment is the same as that in the first embodiment, except that before the etching of the device structure is performed, a dry etching process is first used to perform a pre-etching on the back of the first wafer 201 to form a back reinforcing structure by patterning, where the back pre-etching process may be performed before the preparation of the metal layer 115 or after the preparation of the metal layer 115, and this embodiment is described as an example before the preparation of the metal layer 115:
as shown in fig. 12, performing back pre-etching on the first wafer 201 after the pre-treatment, and patterning by using a dry etching process to form a second back reinforcing structure 616;
as shown in fig. 13, a sixth metal layer 615 is formed on the surface of the single crystal silicon wafer by an evaporation or sputtering process;
as shown in fig. 14, the single crystal silicon wafer is etched by a dry etching process to form a device structure, and the MEMS structural portion 110 is completed.
As shown in fig. 15, the sixth electromagnetically driven galvanometer 600 is completed by bonding the sixth coil unit 620 and the sixth MEMS structural unit 610, which are prepared in advance, integrally by organic bonding.
Sixth embodiment:
in addition to the fourth embodiment, referring to fig. 16 to 18, a seventh coil portion 720 of the electromagnetically driven galvanometer is attached to and embedded in a back portion of a seventh movable frame 713, the back portion of the seventh movable frame 713 is patterned to form an etching groove with a large opening size, and a material remaining in the back portion constitutes a third back reinforcing structure of the seventh movable frame 713;
the seventh coil portion 720 is fitted into and bonded to the back of the seventh movable frame 713;
depending on the depth of the etched grooves and the thickness of the seventh coil part 720, one of the faces of the attached seventh coil part 720 may be flush with the wafer surface, as shown in fig. 16, and may protrude, as shown in fig. 17;
the etching groove for embedding and attaching the coil part 120 may be provided at the center of the seventh movable frame 713 or at the edge as shown in fig. 18.
By fitting the seventh coil portion 720 into the back of the seventh movable frame 713, the contact area between the seventh coil portion 720 and the MEMS structural portion 110 when the seventh coil portion is attached is increased, and the adhesion effect is more secure. Meanwhile, the back-patterned etching groove also defines the position where the coil part 120 is attached, facilitating the alignment and bonding operations when the seventh coil part 720 is attached.
Similarly, in some other embodiments, an etched groove may be disposed on the upper surface of the movable frame 113.
Seventh embodiment:
referring to fig. 19 to 21, on the basis of the sixth embodiment, the eighth coil portion 820 of the electromagnetic driving galvanometer is specially wound, the overall contour of the upper eighth coil portion 8201 embedded in the etching groove is consistent with that of the etching groove, the lower eighth coil portion 8202 protruding out of the etching groove is wound according to the contour of the eighth movable frame 813, and the upper eighth coil portion 8201 and the lower eighth coil portion 8202 are both wound by one metal wire and are only distinguished from the overall contour.
The embodiment shown in fig. 19 is a case where the etching groove is located in the center area of the eighth movable frame 813, and the embodiment shown in fig. 20 is a case where the etching groove is located at the edge of the eighth movable frame 813. When the etched groove is located in the central region of the eighth movable frame 813, the coil winding method shown in fig. 20 may also be used to form a half-covered eighth coil part 820, as shown in fig. 21.
The specially wound coil can further increase the contact area between the eighth coil part 820 and the MEMS structure part 110, so that the bonding effect is firmer and more reliable. Meanwhile, the eighth coil part 8202 below the protruding etching groove can be wound according to the outline of the first movable frame 113, so that the limitation of the size of the etching groove on the size of the eighth coil part 820 is reduced, the influence of the eighth coil part 8202 below the protruding etching groove on the mass center position of the device is reduced, coils with more layers can be wound, larger driving force is realized, the change of the mass center position can cause modal interference of the device, the device performance is influenced, and the influence needs to be avoided as much as possible.
Eighth embodiment:
in addition to the seventh embodiment, please refer to fig. 22,
fig. 22 shows the winding of the ninth coil part with the bottom of the ninth coil part conforming to the contour of the etched groove and the top of the ninth coil part conforming to the contour of the eighth movable frame 813, and fig. 22 is a schematic cross-sectional view of the coil showing the arrangement sequence of the 47-turn coil.
The winding direction of each turn of coil is kept the same, the coil can be wound anticlockwise or clockwise, when the first layer of coil is wound from the periphery of the frame to the inner side, the first layer of coil is moved upwards and wound from the inner side to the periphery, and the winding direction is always kept the same in the winding process.
Ninth embodiment:
in addition to the seventh embodiment, please refer to fig. 23 to fig. 25,
the tenth coil part 1020 of the illustrated electromagnetically driven galvanometer is also fixed by adhesion using the side wall of the tenth movable frame 1013, thereby further improving the reliability of adhesion.
The embodiment shown in fig. 23 is a case where the etching grooves are located in the center area of the tenth movable frame 1013, and the embodiment shown in fig. 24 is a case where the etching grooves are located at the edges of the tenth movable frame 1013. When the etching groove is located in the center region of the tenth movable frame 1013, the coil winding method shown in fig. 24 may be used to form the half-covered coil portion 1020, as shown in fig. 25.
In the ninth embodiment, the tenth coil part 1020 is specially wound in addition to the seventh embodiment. And after the coil part below the protruding etching groove is wound, continuously winding the coil to form a side coil.
The tenth coil part 1020 and the tenth movable frame 1013 are bonded, the upper coil part is fitted into the etching bath and bonded to the etching bath side wall, the lower coil part is bonded to the lower surface of the movable frame, and the side coil part is bonded to the side wall of the movable frame, so that the contact area at the time of bonding is further increased in addition to the seventh embodiment, and the reliability of bonding is further improved.
The tenth movable frame 1013 and the tenth coil part 1020 fixed by bonding have various shapes, and are not limited to the figures shown in the drawings of this application.
Tenth embodiment:
referring to fig. 26 to 27 in addition to embodiments 1 to 9, an eleventh coil portion 1120 of the electromagnetic driven galvanometer shown in fig. 26 is divided into an upper coil and a lower coil, and the upper and lower coils are bonded to a tenth movable frame 1013 of the MEMS driving structure twice;
in some embodiments as shown in fig. 26, the electrical connection layer 1115 is only located on the upper surface of the movable frame 113, and the electrical interconnection of the upper and lower coils needs to be implemented by flying leads.
As shown in fig. 27, the electrical connection layer 1115 is disposed on the upper and lower surfaces of the eleventh movable frame 1113, and is connected through the prefabricated TSV structure 1117. Whether the fly line or the pre-fabricated TSV structure 1117, the upper and lower layers of coils can be arranged in a parallel or series structure as required.
By providing the eleventh coil section 1120 on the upper and lower surfaces of the eleventh movable frame 1113, the following effects can be achieved:
the number of turns of the coil is doubled, and the driving force is increased, so that the motion amplitude of the vibrating mirror under the same current is larger; the current required for realizing the same motion amplitude is smaller, and the heat loss is smaller;
the center of mass position of the device is kept at the center height of the movable structure, and the phenomenon that the center of mass position deviates to cause movement interference when the coil is pasted on one side is avoided.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (3)
1. An electromagnetic MEMS micro-mirror, which is composed of an MEMS structure part and a coil part, is arranged on a base when in work, is adhered with the base and is arranged in a fixed magnetic field,
the MEMS structure part comprises at least one device structure layer made of monocrystalline silicon, the device structure layer comprises a movable mirror surface, a first torsion shaft, a second torsion shaft, a movable frame, a fixed frame and a metal layer, the first torsion shaft is connected with the movable mirror surface and the movable frame, the second torsion shaft is connected with the movable frame and the fixed frame, the first torsion shaft and the second torsion shaft are orthogonally arranged, the metal layer is arranged on the surface of the movable mirror surface, and the metal layer is made of a high-reflectivity material;
coil portion is formed by the coiling of enamelled coil under the assistance of mould, and aforementioned enamelled coil passes through hot-blast or chemical reagent and realizes from the type back, with MEMS structure portion realizes bonding through organic gluing, coil portion drives after letting in alternating current movable mirror surface with movable frame respectively with first torsion axis with the second torsion axis is the axle production and twists reverse, movable mirror surface is relative fixed frame carries out two-dimensional motion.
2. The electromagnetic MEMS micro-mirror according to claim 1, wherein the movable frame further comprises a plurality of etching grooves formed in a front surface or a back surface of the movable frame and bonded to the coil portion by an organic adhesive.
3. A method for fabricating an electromagnetic MEMS micro-mirror as claimed in claim 2,
the manufacturing process of the electromagnetic MEMS micro-mirror comprises the following steps:
s1: preparing a first wafer, and performing conventional pretreatment, wherein the conventional pretreatment comprises cleaning and drying, and the first wafer is a monocrystalline silicon wafer or an SOI wafer;
s2: forming a metal layer on the surface of the first wafer through an evaporation or sputtering process, wherein the metal layer comprises a mirror reflection layer;
s3: after the front protection is finished, etching the first wafer through a dry etching process to form a device structure layer, and preparing an MEMS structure part by using the device structure layer;
s4: and bonding the pre-prepared coil part and the MEMS structure part into a whole through organic bonding, thereby completing the preparation of the electromagnetic driving vibrating mirror.
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