CN115132860B - Solar cell production method and solar cell - Google Patents
Solar cell production method and solar cell Download PDFInfo
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- CN115132860B CN115132860B CN202110316378.2A CN202110316378A CN115132860B CN 115132860 B CN115132860 B CN 115132860B CN 202110316378 A CN202110316378 A CN 202110316378A CN 115132860 B CN115132860 B CN 115132860B
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- containing barrier
- silicon substrate
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 180
- 230000004888 barrier function Effects 0.000 claims abstract description 128
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 108
- 239000010703 silicon Substances 0.000 claims abstract description 108
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000002923 metal particle Substances 0.000 claims abstract description 26
- 238000009713 electroplating Methods 0.000 claims abstract description 25
- 229910052709 silver Inorganic materials 0.000 claims abstract description 22
- 239000004332 silver Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims description 66
- 239000002184 metal Substances 0.000 claims description 66
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 18
- 238000005245 sintering Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 4
- 238000010926 purge Methods 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000007790 scraping Methods 0.000 claims description 3
- -1 silver aluminum Chemical compound 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 2
- 229910000925 Cd alloy Inorganic materials 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- 229910001245 Sb alloy Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 2
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 claims description 2
- OLXNZDBHNLWCNK-UHFFFAOYSA-N [Pb].[Sn].[Ag] Chemical compound [Pb].[Sn].[Ag] OLXNZDBHNLWCNK-UHFFFAOYSA-N 0.000 claims description 2
- YVIMHTIMVIIXBQ-UHFFFAOYSA-N [SnH3][Al] Chemical compound [SnH3][Al] YVIMHTIMVIIXBQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002140 antimony alloy Substances 0.000 claims description 2
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 claims description 2
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 claims description 2
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001174 tin-lead alloy Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 abstract description 18
- 238000010248 power generation Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 167
- 210000004027 cell Anatomy 0.000 description 62
- 238000002161 passivation Methods 0.000 description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 12
- 238000007747 plating Methods 0.000 description 11
- 238000001723 curing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910021471 metal-silicon alloy Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020938 Sn-Ni Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910020935 Sn-Sb Inorganic materials 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910018725 Sn—Al Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910008937 Sn—Ni Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 229910008757 Sn—Sb Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000011416 infrared curing Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003847 radiation curing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application provides a solar cell production method and a solar cell, and relates to the technical field of photovoltaics. The solar cell production method comprises the following steps: providing a silicon substrate; providing a first electrode portion having first metal particles on a silicon substrate, the first metal particles including silver; forming a tin-containing barrier layer on the first electrode portion; the mass content of tin in the tin-containing barrier layer is greater than or equal to 40%; and electroplating a second electrode portion on the tin-containing barrier layer. The tin-containing barrier layer with the tin mass content of more than or equal to 40% fills the first electrode part, so that the surface of the first electrode part close to the second electrode part is more compact, the second electrode part is prevented from penetrating into the first electrode part to a great extent, auxiliary materials and the like in the process of electroplating the second electrode part are prevented from penetrating into the first electrode part to a great extent, the binding force between the first electrode part and the silicon substrate is ensured, the binding force between the electrode and the silicon substrate is further ensured, and the power generation efficiency and the reliability of the solar cell are improved.
Description
Technical Field
The application relates to the technical field of solar photovoltaics, in particular to a solar cell production method and a solar cell.
Background
Currently, the manner of producing electrodes for silicon-based solar cells is mainly the following: screen printing and plating. Since screen printing has problems of limited accuracy, large series resistance of the formed electrodes, high cost, and the like, plating methods are increasingly widely used.
However, the inventors found that, in a method of producing an electrode by studying the existing plating method, there are the following disadvantages: the bonding force between the electrode formed by the existing plating mode and the silicon substrate is poor, so that the power generation efficiency and the reliability of the solar cell are seriously affected.
Disclosure of Invention
The application provides a solar cell production method and a solar cell, and aims to solve the problem that an electrode formed by an existing plating mode has poor bonding force with a silicon substrate.
According to a first aspect of the present application, there is provided a solar cell production method comprising the steps of:
providing a silicon substrate;
providing a first electrode portion having first metal particles on the silicon substrate, the first metal particles including silver;
forming a tin-containing barrier layer on the first electrode portion; the mass content of tin in the tin-containing barrier layer is greater than or equal to 40%;
and electroplating a second electrode part on the tin-containing barrier layer.
In the embodiment of the application, the first electrode part contains silver, and the solder barrier layer can be easily formed on the first electrode part. Before the second electrode part is electroplated, a tin-containing barrier layer is formed on the first electrode part, the tin-containing barrier layer contains tin with the mass content of more than or equal to 40%, the tin-containing barrier layer with the mass content of more than or equal to 40% fills the first electrode part, particularly fills the surface of the first electrode part close to the second electrode part, so that the surface of the first electrode part close to the second electrode part is more compact, the second electrode part can be prevented from penetrating into the first electrode part to a great extent, auxiliary materials and the like in the process of electroplating the second electrode part can be prevented from penetrating into the first electrode part to a great extent, the original performance of the first electrode part can be maintained to the greatest extent, the influence on the bonding capacity of the first electrode part and the silicon substrate due to the fact that the auxiliary materials and the like in the process of electroplating the second electrode part penetrate into the first electrode part is avoided to a great extent, and the bonding capacity of the first electrode part and the silicon substrate is further, and the bonding capacity of the solar cell is further guaranteed, and the power generation efficiency and the reliability of the solar cell are improved. And the tin-containing barrier layer with the tin content of more than or equal to 40% has excellent conductivity and larger surface area, so that the electric connection between the first electrode part and the second electrode part can be improved, and meanwhile, the conductivity between the electrode and the silicon substrate is improved, so that the power generation efficiency and the reliability of the solar cell are further improved. Meanwhile, the second electrode part is formed in an electroplating mode, so that the consumption of metal materials can be reduced, particularly, the use of silver materials is greatly reduced, the production cost can be reduced, the manufacturing precision is high, the operation is relatively simple, and the method is convenient for large-scale industrial application.
According to a second aspect of the present application, there is provided a solar cell manufactured by any of the aforementioned solar cell manufacturing methods.
The solar cell has the same or similar beneficial effects as the solar cell production method, and in order to avoid repetition, the description is omitted here.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments of the present application will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a flow chart of steps of a method of producing a solar cell in an embodiment of the application;
fig. 2 shows a schematic structural view of a solar cell in an embodiment of the present application;
fig. 3 shows a schematic structural view of another solar cell in an embodiment of the present application;
fig. 4 shows a schematic structural diagram of a further solar cell in an embodiment of the application;
fig. 5 shows a schematic structural view of a solar cell electrode in an embodiment of the present application;
fig. 6 shows a schematic structural view of another solar cell electrode in an embodiment of the present application;
fig. 7 shows a schematic structural view of still another solar cell in an embodiment of the present application;
fig. 8 shows a schematic structural view of a further solar cell in an embodiment of the application.
Description of the drawings:
1-silicon substrate, 2-passivation film, 3-first electrode part, 4-tin-containing barrier layer, 5-second electrode part, 51-first metal electrode layer, 52-second metal electrode layer, 53-third metal electrode layer, 6-main gate electrode, 7-thin gate electrode, 8-passivation anti-reflection layer, 9-tunneling layer, 10-doped polysilicon layer, 11-silicon substrate, 12-emitter, 13-front electrode, 14-back electrode, 15-p-type polysilicon, 16-n-type polysilicon, 17-n-type electrode, 18-p-type electrode.
Detailed Description
The inventors found that the main reason why the bonding force between the electrode formed by the conventional plating method and the silicon substrate is poor is that: the seed layer on the silicon substrate is not dense enough so that other layers plated on the seed layer penetrate the seed layer and auxiliary materials plated on other layers penetrate the seed layer, however, the materials penetrating the seed layer react with the seed layer to generate new substances which can cause degradation of the vitreous structure in the seed layer, thereby reducing the bonding capability of the seed layer and the silicon substrate, and the bonding capability of the seed layer and the silicon substrate is deteriorated. In the application, before the second electrode part is electroplated, a tin-containing barrier layer is formed on the first electrode part, wherein the tin-containing barrier layer contains tin with the mass content of more than or equal to 40 percent, and the tin-containing barrier layer contains tin with the mass content of more than or equal to 40 percent, so that the surface of the first electrode part, which is close to the second electrode part, is filled, the surface of the first electrode part, which is close to the second electrode part, is more compact, the second electrode part can be prevented from penetrating into the first electrode part to a great extent, auxiliary materials and the like in the process of electroplating the second electrode part can be prevented from penetrating into the first electrode part to a great extent, the original performance of the first electrode part can be maintained to the greatest extent, the influence on the bonding capability of the first electrode part and the silicon substrate due to the fact that the auxiliary materials and the like in the process of electroplating the second electrode part and the second electrode part penetrate into the first electrode part is avoided to a great extent, the bonding capability of the first electrode part and the silicon substrate is further ensured, and the solar cell bonding capability and solar cell bonding capability are further ensured. And the tin-containing barrier layer with the tin content of more than or equal to 40% has excellent conductivity and larger surface area, so that the electric connection between the first electrode part and the second electrode part can be improved, and meanwhile, the conductivity between the electrode and the silicon substrate is improved, so that the power generation efficiency and the reliability of the solar cell are further improved. Meanwhile, the second electrode part is formed in an electroplating mode, so that the consumption of metal materials can be reduced, particularly, the use of silver materials is greatly reduced, the production cost can be reduced, the manufacturing precision is high, the operation is relatively simple, and the method is convenient for large-scale industrial application.
Fig. 1 shows a flow chart of steps of a solar cell production method in an embodiment of the present application. Referring to fig. 1, the method comprises the steps of:
step S1, providing a silicon substrate.
The silicon substrate may be composed of a silicon base and a conductive region. The silicon substrate is mainly composed of monocrystalline silicon and polycrystalline silicon, and specific materials of the silicon substrate are not limited. The conductive region and the silicon substrate cooperate primarily for separating and transporting carriers in the solar cell.
The conductive region may be located in the silicon substrate, and in particular, the conductive region may be doped from the silicon substrate. For example, the silicon substrate may be a monocrystalline silicon wafer or a polycrystalline silicon wafer having a conductivity type, the conductivity type dopant being an n-type or P-type dopant, i.e., the conductivity type dopant may be an n-type impurity such As a group V element including phosphorus (P), arsenic (As), bismuth (Bi), antimony (Sb), or the like. Alternatively, the dopant of the conductivity type may be a p-type impurity such as a group III element including boron (B), aluminum (Al), gallium (Ga), indium (In), or the like. A second conductive type having a relatively high doping concentration may be formed in one side surface of the silicon substrate, and a first conductive type having a higher doping concentration than the silicon substrate may be formed on the other side surface of the silicon substrate, and the first conductive type may be formed of doped polysilicon or amorphous silicon.
Alternatively, the conductive region may be formed by a thermal process. Alternatively, the conductive region is deposited on one side of the silicon substrate. For example, the conductive region is formed by Chemical Vapor Deposition (CVD), low Pressure Chemical Vapor Deposition (LPCVD), atmospheric Pressure Chemical Vapor Deposition (APCVD), plasma Enhanced Chemical Vapor Deposition (PECVD), thermal growth, sputtering, and the like.
A textured or textured structure may be formed on the surface of the silicon substrate for increasing the solar radiation collection effect. The textured surface or textured structure is a surface having a regular or irregular shape for scattering incident light, reducing the amount of light reflected back from the solar cell surface. A passivation film may also be formed on the textured surface or textured structure to further improve the light absorption properties of the solar cell. Different passivation film stacks may be formed on the side of the silicon substrate receiving the illumination and the side of the backlight, respectively. For example, silicon oxide+silicon nitride is used on the side of the silicon substrate that receives the light, and aluminum oxide+silicon nitride is used on the side of the silicon substrate that is backlit. The passivation film has a plurality of contact holes formed thereon, and may be formed by wet etching, ablation technique, or the like. The contact hole does not penetrate through the thickness of the passivation film, or the contact hole may penetrate through the passivation film to directly contact the conductive region. In the case that the contact hole is directly contacted with the conductive region through the passivation film, care needs to be taken to consider selection of laser process parameters, so that damage of laser to the silicon substrate is reduced as much as possible.
For the case where the second conductivity type is formed in the one side surface of the silicon substrate and the first conductivity type is formed on the other side surface of the silicon substrate, the first passivation film and the second passivation film provided with the opening are formed on the second conductivity type and the first conductivity type, respectively, and the second electrode and the first electrode are in contact with the second conductivity type and the first conductivity type, respectively, through the opening. Alternatively, a plurality of doped polysilicon regions of the first conductivity type are formed on the back surface of the silicon substrate and a plurality of second conductivity types are formed in the back surface, a passivation film provided with a plurality of openings is formed on the second conductivity type and the first conductivity type regions, and the first electrode and the second electrode are respectively in contact with the first conductivity type and the second conductivity type through the openings. The first electrode and the second electrode are opposite in polarity.
And step S2, a first electrode part with first metal particles is arranged on the silicon substrate, and the first metal particles comprise silver.
The first electrode portion has first metal particles, the first metal particles may include silver particles, the first electrode portion includes silver, and the solder barrier layer can be relatively easily formed on the first electrode portion. The other material contained in the first electrode portion is not particularly limited. Alternatively, the first electrode part may be silver paste or silver-aluminum paste, tin can be easily deposited on the surface of silver, tin on the surface of aluminum is usually not or is not easily deposited, the first electrode part is silver paste or silver-aluminum paste, and a tin-containing barrier layer can be conveniently formed on the first electrode part. The first electrode portion may be provided in a continuous elongated shape or in a discontinuous dot shape. The first electrode portion may serve as a contact point for a metal electrode layer in a second electrode portion for subsequent plating. The first electrode part can be contacted with the silicon substrate without penetrating through the passivation film, a patterned opening of an electroplating pattern is formed on the passivation film through laser ablation, and the opening does not penetrate through the thickness of the passivation film, so that the damage of the laser process to the doped silicon layer below is avoided, the increase of the recombination is avoided, and the reduction of the battery efficiency is avoided.
The manner of providing the first electrode portion having the first metal particles on the silicon substrate is not particularly limited. For example, a paste including first metal particles may be deposited on a silicon substrate, and then the paste may be cured, thereby forming a first electrode portion having the first metal particles on the silicon substrate.
Alternatively, a paste containing the first metal particles may be printed on the silicon substrate using a printing technique (including screen printing, spin coating, ink jet printing, and the like), and then the paste may be sintered or cured to form the first electrode portion in electrical contact with the silicon substrate. The curing may be volatile or the like, and may be specifically formed into a solid at a relatively low temperature. The curing process may be selected from the group consisting of thermal curing, ultraviolet curing, infrared curing, and any other energy process of radiation curing. The first electrode portion electrically contacting the silicon substrate as a whole can realize separation, transport, and collection of carriers. In the case where a passivation film is provided on a silicon substrate, a paste having first metal particles is printed in an opening region of the passivation film. The paste having the first metal particles may include the first metal particles and a glass body, and the thickness of the printed paste has a thickness of at least 2 um. The inventors found that: the surface or the inside of the first electrode part which is in electrical contact with the silicon substrate is usually provided with a hole and other structures by sintering or curing the slurry, and the surface or the inside of the first electrode part is not compact enough, so that the first electrode part is filled with a barrier layer with the mass content of tin being more than or equal to 40% aiming at the first electrode part formed by sintering or curing the slurry, particularly the surface of the first electrode part close to the second electrode part is filled, the surface of the first electrode part close to the second electrode part is compact, the second electrode part is prevented from penetrating into the first electrode part to a great extent, auxiliary materials and the like in the process of electroplating the second electrode part are prevented from penetrating into the first electrode part to a great extent, the influence on the bonding capacity of the first electrode part and the silicon substrate due to the fact that the second electrode part, the auxiliary materials and the like in the process of electroplating the second electrode part penetrate into the first electrode part is avoided to a great extent, the bonding capacity of the first electrode part and the silicon substrate is guaranteed, the bonding capacity of the first electrode part and the solar cell is further guaranteed, and the bonding capacity and the solar cell bonding capacity of the solar cell are further guaranteed.
Step S3, forming a tin-containing barrier layer on the first electrode part; and the mass content of tin in the tin-containing barrier layer is greater than or equal to 40%.
The manner of forming the tin-containing barrier layer on the first electrode portion is not particularly limited. The tin-containing barrier layer is not particularly limited, and includes a material other than tin. The mass content of tin in the tin-containing barrier layer is greater than or equal to 40%. The tin-containing barrier layer with the tin content of more than or equal to 40% has good filling effect on the first electrode part, particularly has good filling effect on the surface of the first electrode part, which is close to the second electrode part, and has good electric conductivity.
The tin-containing barrier layer with the tin content of more than or equal to 40% can well fill the first electrode part, particularly can well fill the surface of the first electrode part close to the second electrode part, so that the surface of the first electrode part close to the second electrode part is more compact, the second electrode part can be prevented from penetrating into the first electrode part to a great extent, auxiliary materials and the like in the process of electroplating the second electrode part can be prevented from penetrating into the first electrode part to a great extent, the first electrode part can keep the original performance to the greatest extent, the influence on the bonding capability of the first electrode part and the silicon substrate due to the penetration of the second electrode part, the auxiliary materials and the like in the process of electroplating the second electrode part into the first electrode part is avoided to a greater extent, the bonding force between the first electrode part and the silicon substrate is ensured, the bonding force between the electrode and the silicon substrate is further ensured, and the power generation efficiency and reliability of the solar cell are improved. And the tin-containing barrier layer with the tin content of more than or equal to 40% has excellent conductivity and larger surface area, so that the electric connection between the first electrode part and the second electrode part can be improved, and meanwhile, the conductivity between the electrode and the silicon substrate is improved, so that the power generation efficiency and the reliability of the solar cell are further improved.
Optionally, the step S3 may be: the silicon substrate having the first electrode portion is immersed in a tin-containing solution, a tin-containing barrier layer is formed only on the first electrode portion, and a tin-containing barrier layer is not formed on the rest of the silicon substrate having the first electrode portion. The temperature of the tin-containing solution is 200-350 ℃, at which the adhesion properties of the tin-containing solution are suitable, so that a tin-containing barrier layer of a suitable thickness is formed on the first electrode portion. That is, after immersing the silicon substrate having the first electrode part in the tin-containing solution, it is possible to conveniently deposit a tin-containing barrier layer on the surface of the first electrode part without adhering to the remaining area, based on the characteristics of the tin-containing solution, and thus, the tin-containing barrier layer is not formed on all surfaces of the silicon substrate having the first electrode part, but is selectively formed only on the surface of the first electrode part. The method for forming the tin-containing barrier layer can conveniently avoid forming the tin-containing barrier layer on the rest part of the silicon substrate with the first electrode part, and simplifies the preparation process of the tin-containing barrier layer.
Alternatively, the silicon substrate having the first electrode portion is immersed in the tin-containing solution for a period of 1 to 10 seconds, and the tin-containing barrier layer can be conveniently formed in a short period of 1 to 10 seconds.
Optionally, the step S3 may further be: and coating a tin-containing solution on the first electrode part, wherein the temperature of the tin-containing solution is 200-350 ℃, and the adhesion performance of the tin-containing solution is proper at the temperature, so that a tin-containing barrier layer with proper thickness is formed on the first electrode part. The tin-containing barrier layer can be conveniently deposited on the surface of the first electrode part by a coating mode, and the tin-containing solution material cannot be adhered to the rest areas. The manner of coating is not particularly limited. For example, a tin-containing solution may be applied to the first electrode portion by bar coating; and/or, knife coating tin-containing solution on the first electrode part.
Optionally, after the step of forming the tin-containing barrier layer on the first electrode portion by means of the tin-containing solution, the method may further include: a portion of the tin-containing barrier layer is removed from a side remote from the first electrode portion. Specifically, the thickness of the tin-containing barrier layer formed in the above manner may be thicker, and in the case where the thickness of the tin-containing barrier layer is thicker, there may be bonding of tin in the tin-containing barrier layer with the first metal particles in the first electrode portion in the subsequent annealing step, so that the first metal particles are bathed by the tin-containing barrier layer, that is, the first metal particles in the first electrode portion may be dissolved and detached by the tin-containing barrier layer, so that interlayer separation occurs between layers of the electrode, and the bonding force between the electrode and the silicon substrate is severely reduced or even completely lost, resulting in embrittlement of the first electrode portion, or detachment of the first electrode portion from the solar cell. Removing part of the tin-containing barrier layer from the side far away from the first electrode part enables the thickness of the obtained tin-containing barrier layer to be appropriate, and avoids or reduces the phenomenon that the first electrode part becomes fragile or the first electrode part falls off from the solar cell.
For example, in the case where the thickness of the tin-containing barrier layer is thick, there may be a combination of tin in the tin-containing barrier layer and silver in the first electrode portion in the subsequent annealing step, so that the first metal particles are bathed by the tin-containing barrier layer, i.e., a "tin-eating silver" phenomenon. Removing part of the tin-containing barrier layer from the side away from the first electrode part enables the thickness of the obtained tin-containing barrier layer to be appropriate, and avoids or reduces the phenomenon of tin eating silver.
Optionally, after removing a portion of the tin-containing barrier layer from a side remote from the first electrode portion, the thickness of the finally remaining tin-containing barrier layer is 0.1-10um. The thickness is a dimension of the finally remaining tin-containing barrier layer in a lamination direction of the silicon substrate and the first electrode portion. The thickness of the tin-containing barrier layer formed on the first electrode part in a tin-containing solution mode is proper, and the phenomenon that the first electrode part becomes fragile or falls off from the solar cell can be avoided or reduced to a great extent.
Optionally, the step of removing a portion of the tin-containing barrier layer may include: scraping part of the tin-containing barrier layer; and/or, hot air purging to remove a portion of the tin-containing barrier layer; and/or heating and dipping part of the tin-containing barrier layer by adopting a heating tool. The method for removing part of the tin-containing barrier layer is simple to realize, and the removal thickness is convenient to control. Specifically, a scraping portion such as a jig may be used to scrape the tin-containing barrier layer. The tin has a lower melting point and can melt away part of the tin-containing barrier layer under a hot air purge. For example, a hot air purge of 200-300 ℃ may be used to melt a portion of the tin-containing barrier layer. And (3) contacting the tin-containing barrier layer by adopting a heating tool, heating the tin-containing barrier layer, and then dipping part of the tin-containing barrier layer.
Even though the above removal step still has the tin-containing barrier layer in the pores of the first electrode portion, the tin-containing barrier layer located in the pores of the first electrode portion can largely prevent the second electrode portion from penetrating into the first electrode portion, and can largely prevent auxiliary materials and the like in the process of plating the second electrode portion from penetrating into the first electrode portion.
Optionally, a suitable amount of a solderable metal corresponding to tin may be added in the process of obtaining the tin-containing barrier layer, where the solderable metal corresponding to tin is a metal that tin can deposit on its surface, such as silver, etc., and the tin in the tin-containing barrier layer may be delayed to some extent from binding with the first metal particles in the first electrode portion. The type and content of the solderable metal corresponding to the specifically increased tin are not limited.
Optionally, before the tin-containing solution is used to make the tin-containing barrier layer, the method may further comprise: and dissolving the tin-containing material to form a tin-containing solution for forming the tin-containing barrier layer. The tin-containing material may include: at least one of tin-lead alloy (Sn-Pb), tin-bismuth alloy (Sn-Bi), tin-lead-silver alloy (Sn-Pb-Ag), tin-silver alloy (Sn-Ag), tin-aluminum alloy (Sn-Al), tin-antimony alloy (Sn-Sb), tin-nickel alloy (Sn-Ni), tin-zinc alloy (Sn-Zn) or tin-cadmium alloy (Sn-Cd). The method for obtaining the tin-containing solution is simple. In the formed tin-containing solution, the mass content of tin is still greater than or equal to 40%.
Fig. 2 shows a schematic structure of a solar cell in an embodiment of the present application. Referring to fig. 2, a first electrode portion 3 is provided on a silicon substrate 1, and a tin-containing barrier layer 4 is located between the first electrode portion 3 and a second electrode portion 5. Referring to fig. 2, a tin-containing barrier layer 4 is located between the first electrode part 3 and the second electrode part 5. The tin-containing barrier layer 4 covers the surface of the first electrode portion 3 remote from the silicon substrate 1. The second electrode part 5 includes at least two metal electrode layers. The second electrode part 5 includes 3 metal electrode layers as in fig. 2. The second electrode portion 5 comprises a first metal electrode layer 51 adjacent to the tin-containing barrier layer 4.
Referring to fig. 2, the thickness h1 of the tin-containing barrier layer 4 is optionally greater than the thickness h2 of the first metal electrode layer 51. The thickness h1 of the tin-containing barrier layer 4 is the dimension of the tin-containing barrier layer 4 in the lamination direction of the silicon substrate 1 and the first electrode portion 3. The thickness h2 of the first metal electrode layer 51 is the size of the portion of the first metal electrode layer 51 between the tin-containing barrier layer 4 and the second electrode layer 52 in the lamination direction of the silicon substrate 1 and the first electrode portion 3. The thickness h1 of the tin-containing barrier layer 4 is greater than the thickness h2 of the first metal electrode layer 51, so that a good barrier effect can be achieved, the second electrode portion 5 can be further prevented from penetrating into the first electrode portion 3, and auxiliary materials and the like in the process of electroplating the second electrode portion 5 are further prevented from penetrating into the first electrode portion 3. The thickness h1 of the tin-containing barrier layer 4 is not limited, and is larger than the thickness h2 of the first metal electrode layer 51. For example, the thickness h1 of the tin-containing barrier layer 4 may be greater than or equal to about five times the thickness h2 of the first metal electrode layer 51.
Referring to fig. 2, alternatively, the thickness h1 of the tin-containing barrier layer 4 is 0.1-10um, the thickness of the tin-containing barrier layer 4 is appropriate within the above thickness range, the thickness is not excessively large, the first electrode portion is prevented or reduced from becoming fragile to a great extent, the phenomenon that the first electrode portion falls off from the solar cell is avoided or reduced, and meanwhile, the tin-containing barrier layer 4 within the above thickness range has good barrier effect and is less in use amount, and the cost can be reduced to a great extent. More preferably, the thickness h1 of the tin-containing barrier layer 4 may be 1 to 5um.
Referring to fig. 2, the resistivity of the tin-containing barrier layer 4 may be less than or equal to the resistivity of the first metal electrode layer 51, which is advantageous for current transmission and has a small loss, so as to further improve the power generation efficiency and reliability of the solar cell.
Fig. 3 shows a schematic structural view of another solar cell in an embodiment of the present application. Optionally, referring to fig. 3, the tin-containing barrier layer 4 covers all surfaces of the first electrode portion 3 opposite to the second electrode portion 5, so as to isolate the first electrode portion 3 from the second electrode portion 5, and compared with fig. 2, the tin-containing barrier layer 4 in fig. 3 covers the first electrode portion more fully, isolates the first electrode portion 3 from the second electrode portion 5 fully, more thoroughly avoids the second electrode portion 5 from penetrating into the first electrode portion 3, more thoroughly avoids auxiliary materials and the like in the process of electroplating the second electrode portion 5 from penetrating into the first electrode portion 3, and has better blocking effect.
And S4, electroplating a second electrode part on the tin-containing barrier layer.
Referring to fig. 2, a second electrode part 5 is electroplated on the tin-containing barrier layer 4, the second electrode part 5 comprising at least two metal electrode layers. The first metal particles contained in the first electrode portion 3 and the metal materials contained in the second electrode portion 5 are different from each other. The metal materials contained in the respective metal electrode layers in the second electrode portion 5 are also different. The plating may specifically be electrolytic plating. The second electrode part is formed in an electroplating mode, so that the consumption of metal materials can be reduced, particularly, the use of silver materials is greatly reduced, the production cost can be reduced, the manufacturing precision is high, the operation is relatively simple, and the large-scale industrial application is convenient.
Specifically, each metal electrode layer is electroplated on the tin-containing barrier layer in sequence. For example, as shown in fig. 2, a first metal electrode layer 51 is first electroplated on the tin-containing barrier layer 4, then a second metal electrode layer 52 is electroplated on the first metal electrode layer 51, and then a third metal electrode layer 53 is electroplated on the second metal electrode layer 52.
Optionally, the first metal electrode layer 51 includes a second metal, and after the first metal electrode layer 51 is electroplated, the method may further include: sintering the silicon substrate 1 plated with the first metal electrode layer 51 in a nitrogen atmosphere and/or an inert gas atmosphere; the sintering temperature is 300-500 ℃ and the sintering time is 0.5-2 minutes, so that a second metal-silicon alloy can be formed, and the second metal-silicon alloy generally has lower resistance, can reduce loss and improve conductivity between the electrode and the silicon substrate. For example, if the first metal electrode layer 51 is a nickel layer, the silicon substrate 1 on which the first metal electrode layer 51 is plated is sintered in a nitrogen atmosphere at a sintering temperature of 350 ℃ for 1 minute, so that a low-resistance nickel-silicon alloy can be formed.
The first metal electrode layer 51 described above may be formed in all openings of the main gate formation region including the first electrode portion 3 and in the openings of the fine gate formation region, that is, the first metal electrode layer 51 is in contact with the tin-containing barrier layer in the region where the first electrode portion 3 is provided, and is in contact with the silicon substrate in the opening region where the first electrode portion is not provided (the fine gate formation region), and since the openings other than the first electrode portion region penetrate the passivation film, the first metal electrode layer is actually in direct contact with the surface of the silicon substrate.
Optionally, the second metal included in the first metal electrode layer 51 may be at least one of nickel, cobalt, titanium, and tungsten, and the first metal electrode layer 51 of the above material may form a low-resistance metal silicide material with the silicon substrate 1, so as to reduce the contact resistance between the silicon substrate 1 and the surface electrode, and improve the battery efficiency.
In the case where the second electrode portion 5 includes 3 metal electrode layers, the second metal electrode layer 52 which is provided on the first metal electrode layer 51 and has a metal different from the second metal as a main component may function to improve electrical characteristics because it has a lower resistance. For example, the second metal electrode layer 52 has a lower resistance than the first metal electrode layer 51. Alternatively, the second metal electrode layer 52 may include at least one of aluminum, silver, and gold. The third metal electrode layer 53 provided on the second metal electrode layer 52 is a portion connected to another solar cell or a wiring material for external connection, and may include a material having a characteristic of making an excellent connection with the wiring material. Optionally, the third metal included in the third metal electrode layer 53 may include tin and/or silver. The wiring material may be a solder strip.
Alternatively, the height of the second electrode portion 5 is less than 10um, and the height of the second electrode portion 5 may be a height of the second electrode portion 5 on a side of the tin-containing barrier layer 4 away from the silicon substrate 1 in fig. 2 in a direction in which the first electrode portion 3 is laminated with the silicon substrate 1. The second electrode portion has two dimensions, respectively a length and a width, on a plane perpendicular to the direction in which the first electrode portion 3 is laminated with the silicon substrate 1, the length and the width being dimensions in two directions perpendicular to each other. Wherein the width is less than or equal to the length. The width of the second electrode portion 5 is less than 30um. The second electrode portion has a size within the above range of values, has good conductivity, and is relatively low in cost.
In the embodiment of the application, the first electrode part, the tin-containing barrier layer and the second electrode part form the electrode of the solar cell. The electrode may be a positive electrode or a negative electrode, and the electrode may be a front electrode located on the light-facing side of the silicon substrate or a back electrode located on the backlight side of the silicon substrate, which is not limited in the embodiment of the present application. For example, the first electrode portion, the tin-containing barrier layer, and the second electrode portion form a main gate electrode of the solar cell. Fig. 4 shows a schematic structural diagram of a further solar cell in an embodiment of the application. The thin gate electrode of the solar cell may be composed of only the second electrode part 5. Fig. 5 shows a schematic structural view of a solar cell electrode in an embodiment of the present application. Fig. 6 shows a schematic structural view of another solar cell electrode in an embodiment of the present application. The main gate electrode 6 is a continuous elongated shape in fig. 5. In fig. 6, the main gate electrode 6 is discontinuously arranged in a dot shape. In fig. 5 and 6, 7 are thin gate electrodes.
At least one electrical contact may be provided on the silicon substrate prior to electroplating the second electrode portion, the electrical contact being formed by printing a silver-or aluminum-containing metal paste and annealing. The contact points are used for connecting with a negative electrode of a plating power supply during plating so as to form metal electrode layers of a plated second electrode part in a contact forming area on the surface of the silicon substrate.
Alternatively, the above-mentioned electrical connection points may be symmetrically disposed on the silicon substrate, may be disposed entirely within the main gate region to be formed, or may be formed as a plurality of discrete points within the main gate region, and the electrical connection points within different main gate regions may be formed at one time by printing, so that the process is simple and no additional power supply point is required. During electroplating, the metal electrode layer covers the plurality of dot patterns to form a shape with a thin middle and a thick edge.
Alternatively, the contact point may be formed not in the main gate region but on the deposited passivation film and located near an edge portion of the silicon substrate surface or each corner portion of the silicon substrate. Such a contact point may be formed by printing and sintering a burn-through type metal electrode paste, for example, a conventional sintered type Ag paste or Al paste. The distance between each contact point and the center of the silicon substrate is basically equal, so that the electroplating speed of the contact area is basically consistent during electroplating. Although the additional arrangement of the power supply points brings about a certain increase in process and cost, the overall cost is less affected by the fact that the power supply points are locally arranged in a smaller number. From the viewpoint of increasing the reliability of the battery assembly, since the contact formation regions are all deposited from the plated metal electrode layers, the heights are substantially uniform throughout, and stable and reliable connection can be obtained when the interconnect materials are connected.
Fig. 7 shows a schematic structural view of still another solar cell in an embodiment of the present application. Fig. 8 shows a schematic structural view of a further solar cell in an embodiment of the application. Alternatively, referring to fig. 7 and 8, the solar cell may further include a passivation anti-reflection layer 8, and the silicon substrate 1 in fig. 7 may be composed of a silicon substrate 11 and an emitter 12 diffused on the silicon substrate 11, the emitter 12 being present as a conductive region. The solar cell may further comprise a passivation anti-reflection layer 8, a tunneling layer 9, a doped polysilicon layer 10. Fig. 7 shows a double-sided battery, in which a front electrode 13 and a rear electrode 14 are respectively located on both sides of a silicon substrate 11. Fig. 8 shows a back junction cell, in fig. 8, a silicon substrate 1 is composed of a silicon substrate 11 and p-type polysilicon 15 and n-type polysilicon 16 deposited on the silicon substrate 11, the p-type polysilicon 15 and the n-type polysilicon 16 exist as conductive regions, an n-type electrode 17 is in electrical contact with the n-type polysilicon 16, and a p-type electrode 18 is in electrical contact with the p-type polysilicon 15. In fig. 2, 3, 4, 7 and 8, 2 is a passivation film.
In an embodiment of the application, a solar cell is further provided, and the solar cell is prepared by any one of the solar cell production methods. The solar cell comprises a silicon substrate 1, a first electrode part 3, a tin-containing barrier layer 4 and a second electrode part 5, wherein the first electrode part 3 is positioned on the silicon substrate 1, the first electrode part 3 is provided with first metal particles, the tin-containing barrier layer 4 is positioned on the first electrode part 3, the mass content of tin in the tin-containing barrier layer 4 is greater than or equal to 40%, and the second electrode part 5 is positioned on the tin-containing barrier layer 4. The second electrode portion 5 is galvanically arranged on the tin-containing barrier layer 4. Specifically, the solar cell may refer to the descriptions related to the foregoing method embodiments, and fig. 2 to 8. The solar cell has the same or similar advantages as the solar cell production method, and in order to avoid repetition, the description is omitted here.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred, and that the acts are not necessarily all required in accordance with the embodiments of the application.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The embodiments of the present application have been described above with reference to the accompanying drawings, but the present application is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present application and the scope of the claims, which are to be protected by the present application.
Claims (12)
1. A method of producing a solar cell, comprising the steps of:
providing a silicon substrate;
providing a first electrode portion having first metal particles on the silicon substrate, the first metal particles including silver;
forming a tin-containing barrier layer on the first electrode portion; the mass content of tin in the tin-containing barrier layer is greater than or equal to 40%;
electroplating a second electrode portion on the tin-containing barrier layer;
the step of forming a tin-containing barrier layer on the first electrode portion includes:
immersing the silicon substrate with the first electrode part in a tin-containing solution, forming a tin-containing barrier layer only on the first electrode part, and not forming a tin-containing barrier layer on the rest of the silicon substrate with the first electrode part;
the thickness of the tin-containing barrier layer is 0.1-10um;
the thickness of the tin-containing barrier layer is a dimension of the tin-containing barrier layer in a lamination direction of the silicon substrate and the first electrode portion.
2. The method of producing a solar cell according to claim 1, wherein the step of forming a tin-containing barrier layer on the first electrode portion further comprises:
coating a tin-containing solution on the first electrode part;
the temperature of the tin-containing solution is 200-350 ℃.
3. The method of producing a solar cell according to claim 1, wherein the silicon substrate having the first electrode portion is immersed in the tin-containing solution for a time period of 1 to 10 seconds.
4. The method of producing a solar cell according to claim 2, wherein after the step of forming a tin-containing barrier layer on the first electrode portion, the method further comprises:
a portion of the tin-containing barrier layer is removed from a side remote from the first electrode portion.
5. The method of claim 4, wherein the step of removing a portion of the tin-containing barrier layer comprises:
scraping part of the tin-containing barrier layer;
and/or, hot air purging to remove a portion of the tin-containing barrier layer;
and/or heating and dipping part of the tin-containing barrier layer by adopting a heating tool.
6. The method of producing a solar cell according to claim 2, wherein before the step of forming a tin-containing barrier layer on the first electrode portion, the method further comprises:
dissolving a tin-containing material to form the tin-containing solution for forming the tin-containing barrier layer; the tin-containing material comprises: at least one of tin-lead alloy, tin-bismuth alloy, tin-lead-silver alloy, tin-aluminum alloy, tin-antimony alloy, tin-nickel alloy, tin-zinc alloy or tin-cadmium alloy.
7. The method according to claim 1, wherein the step of disposing the first electrode portion having the first metal particles on the silicon substrate comprises:
printing a paste comprising first metal particles on a silicon substrate;
the paste is sintered or cured to form a first electrode portion in electrical contact with the silicon substrate.
8. The method of claim 1, wherein the first electrode portion is silver or silver aluminum paste.
9. The method of claim 1, wherein the second electrode portion comprises a first metal electrode layer adjacent to the tin-containing barrier layer, the method further comprising, after electroplating to form the first metal electrode layer:
sintering the silicon substrate electroplated with the first metal electrode layer in a nitrogen environment and/or an inert gas environment; the sintering temperature is 300-500 ℃ and the sintering time is 0.5-2 minutes.
10. The method according to claim 1, wherein the second electrode portion includes a first metal electrode layer, a second metal electrode layer, and a third metal electrode layer which are stacked in this order, wherein the first metal electrode layer is adjacent to the tin-containing barrier layer, and the first metal electrode layer includes at least one of nickel, cobalt, titanium, and tungsten; the second metal electrode layer comprises at least one of aluminum, silver and gold; the third metal electrode layer comprises tin and/or silver.
11. The method of any one of claims 1-10, wherein the tin-containing barrier layer covers all surfaces of the first electrode portion opposite the second electrode portion to isolate the first electrode portion from the second electrode portion.
12. A solar cell, characterized in that the solar cell is produced by the solar cell production method according to any one of claims 1 to 11.
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