CN115132860A - Solar cell production method and solar cell - Google Patents
Solar cell production method and solar cell Download PDFInfo
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- CN115132860A CN115132860A CN202110316378.2A CN202110316378A CN115132860A CN 115132860 A CN115132860 A CN 115132860A CN 202110316378 A CN202110316378 A CN 202110316378A CN 115132860 A CN115132860 A CN 115132860A
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- 230000004888 barrier function Effects 0.000 claims abstract description 126
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 111
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 111
- 239000010703 silicon Substances 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims abstract description 110
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 32
- 238000009713 electroplating Methods 0.000 claims abstract description 26
- 239000002923 metal particle Substances 0.000 claims abstract description 23
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- 239000004332 silver Substances 0.000 claims abstract description 22
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- 239000002184 metal Substances 0.000 claims description 65
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- 238000005245 sintering Methods 0.000 claims description 11
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- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
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- 239000002140 antimony alloy Substances 0.000 claims description 2
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- 238000007790 scraping Methods 0.000 claims description 2
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- 229910052785 arsenic Inorganic materials 0.000 description 1
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- 238000007664 blowing Methods 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a solar cell production method and a solar cell, and relates to the technical field of photovoltaics. The solar cell production method comprises the following steps: providing a silicon substrate; providing a first electrode portion having first metal particles on a silicon substrate, the first metal particles comprising silver; forming a tin-containing barrier layer on the first electrode portion; the mass content of tin in the tin-containing barrier layer is more than or equal to 40 percent; and electroplating a second electrode portion on the tin-containing barrier layer. The tin-containing barrier layer with the mass content of tin being more than or equal to 40% fills the first electrode part, so that the surface of the first electrode part close to the second electrode part is more compact, the second electrode part is prevented from permeating into the first electrode part to a great extent, auxiliary materials and the like in the process of electroplating the second electrode part are prevented from permeating into the first electrode part to a great extent, the bonding force between the first electrode part and the silicon substrate is ensured, the bonding force between the electrode and the silicon substrate is further ensured, and the power generation efficiency and the reliability of the solar cell are improved.
Description
Technical Field
The invention relates to the technical field of solar photovoltaics, in particular to a solar cell production method and a solar cell.
Background
At present, the following methods are mainly used for producing electrodes of silicon substrate-based solar cells: and (4) screen printing and plating. Since screen printing has problems of limited accuracy, large series resistance of electrodes to be formed, high cost, and the like, the plating method is being widely used.
However, the inventors have found that the following disadvantages exist in the conventional plating method: the bonding force between the electrode formed by the existing plating mode and the silicon substrate is poor, and the power generation efficiency and the reliability of the solar cell are seriously influenced.
Disclosure of Invention
The invention provides a solar cell production method and a solar cell, and aims to solve the problem that an electrode formed by an existing plating mode is poor in binding force with a silicon substrate.
According to a first aspect of the present invention, there is provided a solar cell production method comprising the steps of:
providing a silicon substrate;
providing a first electrode portion having first metal particles comprising silver on the silicon substrate;
forming a tin-containing barrier layer on the first electrode portion; the mass content of tin in the tin-containing barrier layer is more than or equal to 40 percent;
and electroplating a second electrode part on the tin-containing barrier layer.
In the embodiment of the invention, the first electrode part comprises silver, and the solder barrier layer can be easily formed on the first electrode part. Before the second electrode part is electroplated, a tin-containing barrier layer is formed on the first electrode part, the mass content of tin in the tin-containing barrier layer is more than or equal to 40%, the tin-containing barrier layer with the mass content of tin more than or equal to 40% can fill the first electrode part, particularly the surface of the first electrode part close to the second electrode part is filled, so that the surface of the first electrode part close to the second electrode part is denser, the second electrode part can be prevented from permeating into the first electrode part to a great extent, auxiliary materials and the like in the process of electroplating the second electrode part can be prevented from permeating into the first electrode part to a great extent, the original performance of the first electrode part can be maintained to a maximum extent, and the influence on the bonding capacity of the first electrode part and the silicon substrate due to the permeation of the second electrode part, the auxiliary materials and the like in the process of electroplating the second electrode part can be avoided to a great extent, the bonding force between the first electrode part and the silicon substrate is guaranteed, the bonding force between the electrode and the silicon substrate is further guaranteed, and the power generation efficiency and reliability of the solar cell are improved. Moreover, the tin-containing barrier layer with the tin content of more than or equal to 40% by mass has excellent conductivity and larger surface area, so that the electric connection between the first electrode part and the second electrode part can be improved, and the conductivity between the electrode and the silicon substrate can be improved, thereby further improving the power generation efficiency and the reliability of the solar cell. Meanwhile, the second electrode part is formed in an electroplating mode, so that the using amount of metal materials can be reduced, particularly, the use amount of silver materials is greatly reduced, the production cost can be reduced, the manufacturing precision is high, the operation is relatively simple, and the large-scale industrial application is facilitated.
According to a second aspect of the present invention, there is provided a solar cell prepared by any one of the methods for producing a solar cell.
The solar cell has the same or similar beneficial effects as the solar cell production method, and the details are not repeated herein to avoid repetition.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive labor.
Fig. 1 shows a flow chart of the steps of a method of producing a solar cell in an embodiment of the invention;
FIG. 2 shows a schematic structural diagram of a solar cell in an embodiment of the invention;
FIG. 3 shows a schematic structural diagram of another solar cell in an embodiment of the invention;
fig. 4 shows a schematic structural diagram of a further solar cell in an embodiment of the invention;
FIG. 5 shows a schematic structural diagram of a solar cell electrode in an embodiment of the invention;
FIG. 6 shows a schematic structural diagram of another solar cell electrode in an embodiment of the invention;
fig. 7 shows a schematic structural diagram of still another solar cell in an embodiment of the invention;
fig. 8 shows a schematic structural diagram of another solar cell according to an embodiment of the present invention.
Description of the figure numbering:
1-a silicon substrate, 2-a passivation film, 3-a first electrode part, 4-a tin-containing barrier layer, 5-a second electrode part, 51-a first metal electrode layer, 52-a second metal electrode layer, 53-a third metal electrode layer, 6-a main gate electrode, 7-a fine gate electrode, 8-a passivation anti-reflection layer, 9-a tunneling layer, 10-a doped polysilicon layer, 11-a silicon substrate, 12-an emitter, 13-a front electrode, 14-a back electrode, 15-p-type polysilicon, 16-n-type polysilicon, 17-n-type electrode, 18-p-type electrode.
Detailed Description
The inventors found that the main reason for poor bonding force between the electrode formed by the conventional plating method and the silicon substrate is: the seed layer on the silicon substrate is not dense enough, so that other layers plated on the seed layer penetrate into the seed layer and auxiliary materials plated on other layers penetrate into the seed layer, however, the materials penetrating into the seed layer react with the seed layer to generate new substances, and the new substances can cause the glass body structure in the seed layer to be degraded, thereby reducing the bonding capability of the seed layer and the silicon substrate, and deteriorating the bonding capability of the seed layer and the silicon substrate. In the application, before the second electrode part is electroplated, the tin-containing barrier layer is formed on the first electrode part, the mass content of tin in the tin-containing barrier layer is more than or equal to 40%, the tin-containing barrier layer with the mass content of tin more than or equal to 40% can fill the first electrode part, particularly the surface of the first electrode part close to the second electrode part is filled, so that the surface of the first electrode part close to the second electrode part is denser, the second electrode part can be prevented from permeating into the first electrode part to a great extent, and auxiliary materials and the like in the process of electroplating the second electrode part can be prevented from permeating into the first electrode part to a great extent, so that the first electrode part can maintain the original performance to a maximum extent, and the influence on the bonding capability of the first electrode part and the silicon substrate due to the permeation of the second electrode part, the auxiliary materials and the like in the process of electroplating the second electrode part can be avoided to a great extent, the bonding force of the first electrode part and the silicon substrate is guaranteed, the bonding force of the electrode and the silicon substrate is further guaranteed, and the power generation efficiency and the reliability of the solar cell are improved. Moreover, the tin-containing barrier layer with the tin content of more than or equal to 40% by mass has excellent conductivity and larger surface area, so that the electric connection between the first electrode part and the second electrode part can be improved, and the conductivity between the electrode and the silicon substrate can be improved, thereby further improving the power generation efficiency and the reliability of the solar cell. Meanwhile, the second electrode part is formed in an electroplating mode, so that the using amount of metal materials can be reduced, particularly, the use amount of silver materials is greatly reduced, the production cost can be reduced, the manufacturing precision is high, the operation is relatively simple, and the large-scale industrial application is facilitated.
Fig. 1 shows a flow chart of steps of a method for producing a solar cell according to an embodiment of the present invention. Referring to fig. 1, the method includes the steps of:
step S1, a silicon substrate is provided.
The silicon substrate may be composed of a silicon substrate and a conductive region. The silicon substrate mainly comprises monocrystalline silicon and polycrystalline silicon, and the specific material of the silicon substrate is not limited. The conductive region and the silicon substrate cooperate primarily to separate and transport charge carriers in the solar cell.
The conductive region may be located in the silicon substrate, and in particular, the conductive region may be doped from the silicon substrate. For example, the silicon substrate may be a monocrystalline or polycrystalline silicon wafer having a conductivity type, and the dopant of the conductivity type is an n-type or P-type dopant, that is, the dopant of the conductivity type may be an n-type impurity such As a group V element including phosphorus (P), arsenic (As), bismuth (Bi), antimony (Sb), and the like. Alternatively, the conductive-type dopant may be a p-type impurity such as a group III element including boron (B), aluminum (Al), gallium (Ga), indium (In), and the like. A second conductive type having a relatively high doping concentration may be formed in one side surface of the silicon substrate, and a first conductive type having a higher doping concentration than the silicon substrate may be formed on the other side surface of the silicon substrate, and the first conductive type may be formed of doped polysilicon or amorphous silicon.
Alternatively, the conductive region may be formed by a thermal process. Alternatively, the conductive region is deposited on one side of the silicon substrate. For example, the conductive region is formed by Chemical Vapor Deposition (CVD), Low Pressure Chemical Vapor Deposition (LPCVD), Atmospheric Pressure Chemical Vapor Deposition (APCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), thermal growth, sputtering, and the like.
Textured or textured structures may be formed on the surface of the silicon substrate for increasing the solar radiation collection effect. The textured surface or textured structure is a surface having a regular or irregular shape for scattering incident light, reducing the amount of light reflected back from the surface of the solar cell. A passivation film may also be formed on the textured surface or textured structure to further improve the light absorption properties of the solar cell. Different passivation film stacks may be formed on the side of the silicon substrate receiving light and the side of the backlight, respectively. For example, silicon oxide + silicon nitride is used on the side of the silicon substrate receiving light, and aluminum oxide + silicon nitride is used on the side of the silicon substrate backlight. The passivation film has a plurality of contact holes formed therein, and may be formed by wet etching, ablation, or the like. The contact hole does not penetrate through the thickness of the passivation film, or the contact hole can penetrate through the passivation film and be in direct contact with the conductive region. In the case that the contact hole may be directly contacted with the conductive region through the passivation film, attention needs to be paid to the selection of laser process parameters so as to reduce the damage of the laser to the silicon substrate as much as possible.
In the case where the second conductivity type is formed in one side surface of the silicon substrate and the first conductivity type is formed on the other side surface of the silicon substrate, a first passivation film and a second passivation film provided with openings are respectively formed on the second conductivity type and the first conductivity type, and the second electrode and the first electrode are respectively in contact with the second conductivity type and the first conductivity type through the openings. Alternatively, a plurality of doped polysilicon regions of a first conductivity type are formed on the back surface of the silicon substrate and a plurality of second conductivity types are formed in the back surface, a passivation film provided with a plurality of openings is formed on the second conductivity type and first conductivity type regions, and the first electrode and the second electrode are in contact with the first conductivity type and the second conductivity type through the openings, respectively. The first electrode and the second electrode have opposite polarities.
Step S2, providing a first electrode portion having first metal particles comprising silver on the silicon substrate.
The first electrode portion has first metal particles, the first metal particles may include silver particles, the first electrode portion includes silver, and the solder barrier layer can be formed on the first electrode portion relatively easily. The other material included in the first electrode portion is not particularly limited. Optionally, the first electrode portion may be a silver paste or a silver-aluminum paste, tin can be deposited on the surface of silver relatively easily, tin on the surface of aluminum is not deposited or is not deposited easily, and the first electrode portion is a silver paste or a silver-aluminum paste, so that the tin-containing barrier layer can be formed on the first electrode portion conveniently. The first electrode portion may be a continuous strip or a discontinuous dot arrangement. The first electrode portion may serve as a contact point for a metal electrode layer in a second electrode portion of a subsequent plating. The first electrode part can be contacted with the silicon substrate without penetrating through the passivation film, a patterned opening of an electroplating pattern is formed on the passivation film through laser ablation, and the opening does not penetrate through the thickness of the passivation film, so that damage to the lower doped silicon layer by a laser process is avoided, recombination is avoided, and reduction of battery efficiency is avoided.
The mode of providing the first electrode portion having the first metal particles on the silicon substrate is not particularly limited. For example, a slurry containing first metal particles may be deposited on a silicon substrate and then cured, thereby forming a first electrode portion having the first metal particles on the silicon substrate.
Alternatively, a first electrode portion in electrical contact with the silicon substrate may be formed by printing a paste containing first metal particles on the silicon substrate using a printing technique (including screen printing, spin coating, inkjet printing, and the like), and then sintering or curing the paste. The curing may be volatilization or the like, and specifically may be molding into a solid at a relatively low temperature. The curing process may be selected from thermal curing, ultraviolet curing, infrared curing and any other radiation curing energy process. The first electrode portion in electrical contact with the silicon substrate as a whole enables separation, transport, and collection of carriers. In the case where a passivation film is provided on a silicon substrate, a paste having first metal particles is printed in an opening region of the passivation film. The paste having the first metal particles may include the first metal particles and a glass body, and the thickness of the printed paste has a thickness of at least 2 um. The inventor finds that: the surface or the inside of the first electrode part which is electrically contacted with the silicon substrate is usually provided with a structure such as a hole and the like by sintering or curing the slurry, and the surface or the inside of the first electrode part is not compact enough, so that the first electrode part formed by sintering or curing the slurry is filled with the barrier layer with the mass content of tin being more than or equal to 40%, particularly the surface of the first electrode part close to the second electrode part, so that the surface of the first electrode part close to the second electrode part is compact, the second electrode part can be prevented from permeating into the first electrode part to a great extent, auxiliary materials and the like in the process of electroplating the second electrode part can be prevented from permeating into the first electrode part to a great extent, the first electrode part can maintain the original performance to a maximum extent, and the second electrode part, the hole and the like are prevented from permeating into the first electrode part to a great extent, Auxiliary materials and the like in the process of electroplating the second electrode part penetrate into the first electrode part to influence the bonding capacity of the first electrode part and the silicon substrate, so that the bonding force of the first electrode part and the silicon substrate is guaranteed, the bonding force of the electrode and the silicon substrate is further guaranteed, and the power generation efficiency and the reliability of the solar cell are improved.
A step S3 of forming a tin-containing barrier layer on the first electrode portion; the mass content of tin in the tin-containing barrier layer is more than or equal to 40 percent.
The manner of forming the tin-containing barrier layer on the first electrode portion is not particularly limited. The material of the tin-containing barrier layer is not particularly limited, except that it contains tin. The mass content of tin in the tin-containing barrier layer is more than or equal to 40 percent. The tin-containing barrier layer with the tin content of more than or equal to 40% by mass has a good filling effect on the first electrode part, particularly has a good filling effect on the surface of the first electrode part close to the second electrode part, and has good conductivity.
The tin-containing barrier layer with the tin mass content of more than or equal to 40% can well fill the first electrode part, particularly the surface of the first electrode part close to the second electrode part, so that the surface of the first electrode part close to the second electrode part is denser, the second electrode part can be prevented from permeating into the first electrode part to a great extent, auxiliary materials and the like in the process of electroplating the second electrode part can be prevented from permeating into the first electrode part to a great extent, the first electrode part can keep the original performance to the greatest extent, the influence on the bonding capacity of the first electrode part and the silicon substrate due to the permeation of the second electrode part, the auxiliary materials and the like in the process of electroplating the second electrode part into the first electrode part is avoided to a great extent, the bonding force of the first electrode part and the silicon substrate is ensured, and the bonding force of the electrode and the silicon substrate is further ensured, the power generation efficiency and reliability of the solar cell are improved. Moreover, the tin-containing barrier layer with the tin content of more than or equal to 40% by mass has excellent conductivity and larger surface area, so that the electric connection between the first electrode part and the second electrode part can be improved, and the conductivity between the electrode and the silicon substrate can be improved, thereby further improving the power generation efficiency and the reliability of the solar cell.
Optionally, the step S3 may be: immersing the silicon substrate having the first electrode portion in a tin-containing solution to form a tin-containing barrier layer only on the first electrode portion, and not forming the tin-containing barrier layer on the remaining portion of the silicon substrate having the first electrode portion. The temperature of the tin-containing solution is 200-350 ℃, and the tin-containing solution has proper adhesion performance at the temperature, so that a tin-containing barrier layer with proper thickness can be formed on the first electrode part conveniently. That is, after immersing the silicon substrate having the first electrode portion in the tin-containing solution, the tin-containing barrier layer can be conveniently deposited on the surface of the first electrode portion without adhesion in the remaining region based on the characteristics of the tin-containing solution, and therefore, the tin-containing barrier layer is not formed on all the surface of the silicon substrate having the first electrode portion, but is selectively formed only on the surface of the first electrode portion. The tin-containing barrier layer forming mode can conveniently avoid forming the tin-containing barrier layer on the rest part of the silicon substrate with the first electrode part, and simplifies the preparation process of the tin-containing barrier layer.
Alternatively, the silicon substrate with the first electrode portion is immersed in the tin-containing solution for a duration of 1 to 10 seconds, which may be in a short time of 1 to 10 seconds to facilitate formation of the tin-containing barrier layer.
Optionally, the step S3 may further include: and coating the tin-containing solution on the first electrode part, wherein the temperature of the tin-containing solution is 200-350 ℃, and the tin-containing solution has proper adhesion performance at the temperature so as to form a tin-containing barrier layer with proper thickness on the first electrode part. The tin-containing barrier layer can be conveniently deposited on the surface of the first electrode part by coating, and the material of the tin-containing solution can not be attached to the rest area. The manner of coating is not particularly limited. For example, a tin-containing solution may be bar coated on the first electrode portion; and/or, a tin-containing solution is drawn down on the first electrode part.
Optionally, after the step of forming the tin-containing barrier layer on the first electrode portion by means of the tin-containing solution, the method may further include: removing a portion of the tin-containing barrier layer from a side away from the first electrode portion. Specifically, the thickness of the tin-containing barrier layer formed in the above manner may be thick, and in the case that the thickness of the tin-containing barrier layer is thick, there may be a case that tin in the tin-containing barrier layer is bonded to the first metal particles in the first electrode portion in the subsequent annealing step, so that the first metal particles are taken up by the tin-containing barrier layer, that is, the first metal particles in the first electrode portion may be dissolved and detached by the tin-containing barrier layer, so that interlayer separation occurs between layers of the electrode, and the bonding force between the electrode and the silicon substrate is seriously reduced or completely disappeared, so that the first electrode portion becomes brittle, or the first electrode portion falls off from the solar cell. And removing part of the tin-containing barrier layer from the side far away from the first electrode part, so that the thickness of the obtained tin-containing barrier layer is proper, and the phenomenon that the first electrode part becomes fragile or falls off from the solar cell is avoided or reduced.
For example, in the case where the thickness of the tin-containing barrier layer is thick, there may be a phenomenon in which tin in the tin-containing barrier layer is combined with silver in the first electrode portion in the subsequent annealing step, so that the first metal particles are taken up by the tin-containing barrier layer bath, i.e., "tin eats silver". And removing part of the tin-containing barrier layer from the side far away from the first electrode part to ensure that the thickness of the obtained tin-containing barrier layer is proper, thereby avoiding or reducing the phenomenon of 'tin eating silver'.
Optionally, after removing part of the tin-containing barrier layer from the side away from the first electrode portion, the thickness of the tin-containing barrier layer finally remaining is 0.1-10 um. The thickness is a dimension of the tin-containing barrier layer that finally remains in the direction of lamination of the silicon substrate and the first electrode portion. By removing part of the tin-containing barrier layer, the thickness of the tin-containing barrier layer formed on the first electrode part by the tin-containing solution is proper, so that the phenomenon that the first electrode part becomes brittle or the first electrode part falls off from the solar cell can be avoided or reduced to a great extent.
Optionally, the step of removing a portion of the tin-containing barrier layer may include: scraping off part of the tin-containing barrier layer; and/or, hot air purging to remove a portion of the tin-containing barrier layer; and/or heating and dipping part of the tin-containing barrier layer by adopting a heating tool. The mode for removing the partial tin-containing barrier layer is simple to realize, and the removal thickness is convenient to control. Specifically, a clamp or the like may be used to scrape off a portion of the tin-containing barrier layer. The tin has a low melting point and can melt off part of the tin-containing barrier layer under the condition of hot air blowing. For example, a portion of the tin-containing barrier layer may be melted using a hot air purge at 200-300 ℃. And (3) contacting the tin-containing barrier layer by adopting a heating tool, heating the tin-containing barrier layer, and dipping off part of the tin-containing barrier layer.
Even if the tin-containing barrier layer is still present in the pores of the first electrode portion by the above-described removal step, the second electrode portion can be prevented from penetrating into the first electrode portion to a large extent, and the auxiliary material or the like in the process of plating the second electrode portion can be prevented from penetrating into the first electrode portion to a large extent.
Alternatively, a solderable metal corresponding to tin, which is a metal on which tin can be deposited, such as silver, may be added in an appropriate amount during the process of obtaining the tin-containing barrier layer, and the tin in the tin-containing barrier layer may be somewhat delayed from bonding with the first metal particles in the first electrode portion. The type and content of the solderable metal corresponding to the added tin are not limited.
Optionally, before the tin-containing barrier layer is prepared using the tin-containing solution, the method may further comprise: and dissolving the tin-containing material to form a tin-containing solution for forming the tin-containing barrier layer. The tin-containing material may include: at least one of a tin-lead alloy (Sn-Pb), a tin-bismuth alloy (Sn-Bi), a tin-lead-silver alloy (Sn-Pb-Ag), a tin-silver alloy (Sn-Ag), a tin-aluminum alloy (Sn-Al), a tin-antimony alloy (Sn-Sb), a tin-nickel alloy (Sn-Ni), a tin-zinc alloy (Sn-Zn) or a tin-cadmium alloy (Sn-Cd). The above-described manner of obtaining the tin-containing solution is simple. In the tin-containing solution, the mass content of tin is still greater than or equal to 40%.
Fig. 2 shows a schematic structural diagram of a solar cell according to an embodiment of the present invention. Referring to fig. 2, the first electrode portion 3 is provided on the silicon substrate 1, and the tin-containing barrier layer 4 is located between the first electrode portion 3 and the second electrode portion 5. Referring to fig. 2, the tin-containing barrier layer 4 is located between the first electrode portion 3 and the second electrode portion 5. The tin-containing barrier layer 4 covers the surface of the first electrode portion 3 remote from the silicon substrate 1. The second electrode portion 5 includes at least two metal electrode layers. The second electrode portion 5 comprises 3 metal electrode layers as in fig. 2. The second electrode portion 5 includes a first metal electrode layer 51 adjacent to the tin-containing barrier layer 4.
Referring to fig. 2, optionally, the thickness h1 of the tin-containing barrier layer 4 is greater than the thickness h2 of the first metal electrode layer 51. The thickness h1 of the tin-containing barrier layer 4 is the dimension of the tin-containing barrier layer 4 in the direction in which the silicon substrate 1 and the first electrode portion 3 are stacked. The thickness h2 of the first metal electrode layer 51 is the dimension of the portion of the first metal electrode layer 51 located between the tin-containing barrier layer 4 and the second electrode layer 52 in the stacking direction of the silicon substrate 1 and the first electrode portion 3. The thickness h1 of the tin-containing barrier layer 4 is greater than the thickness h2 of the first metal electrode layer 51, which can play a good role in blocking, and can further prevent the second electrode portion 5 from penetrating into the first electrode portion 3, and further prevent auxiliary materials and the like from penetrating into the first electrode portion 3 during the process of electroplating the second electrode portion 5. The thickness h1 of the tin-containing barrier layer 4 is not limited to a specific value, but is not limited to a specific value, which is larger than the thickness h2 of the first metal electrode layer 51. For example, the thickness h1 of the tin-containing barrier layer 4 may be greater than or equal to about five times the thickness h2 of the first metal electrode layer 51.
Referring to fig. 2, optionally, the thickness h1 of the tin-containing barrier layer 4 is 0.1-10um, and the thickness of the tin-containing barrier layer 4 is appropriate within the above thickness range, and is not too large, so that the first electrode portion can be avoided or reduced from becoming brittle to a great extent, and the phenomenon that the first electrode portion falls off from the solar cell can be avoided or reduced, and meanwhile, the tin-containing barrier layer 4 within the above thickness range not only has a good blocking effect, but also has a small amount of usage, and can reduce the cost to a great extent. More preferably, the thickness h1 of the tin-containing barrier layer 4 may be 1-5 um.
Referring to fig. 2, optionally, the resistivity of the tin-containing barrier layer 4 is less than or equal to that of the first metal electrode layer 51, which is beneficial to current transmission and has low loss, so as to further improve the power generation efficiency and reliability of the solar cell.
Fig. 3 shows a schematic structural diagram of another solar cell in an embodiment of the invention. Optionally, referring to fig. 3, the tin-containing barrier layer 4 covers all surfaces of the first electrode portion 3 opposite to the second electrode portion 5 to isolate the first electrode portion 3 from the second electrode portion 5, and compared to fig. 2, the tin-containing barrier layer 4 covers the first electrode portion more completely in fig. 3, and completely isolates the first electrode portion 3 from the second electrode portion 5, so that the second electrode portion 5 is prevented from penetrating into the first electrode portion 3 more completely, auxiliary materials and the like in the process of electroplating the second electrode portion 5 are prevented from penetrating into the first electrode portion 3 more completely, and the barrier effect is better.
Step S4, a second electrode portion is electroplated on the tin-containing barrier layer.
Referring to fig. 2, a second electrode portion 5 is electroplated on the tin-containing barrier layer 4, the second electrode portion 5 comprising at least two metal electrode layers. The first metal particles contained in the first electrode portion 3 and the metal material contained in the second electrode portion 5 are different from each other. The metal materials contained in the respective metal electrode layers in the second electrode portion 5 are also different from each other. The electroplating may be electrolytic plating. The second electrode part is formed in an electroplating mode, so that the using amount of metal materials can be reduced, particularly, the use amount of silver materials is greatly reduced, the production cost can be reduced, the manufacturing precision is high, the operation is relatively simple, and the large-scale industrial application is facilitated.
Specifically, each metal electrode layer is electroplated on the tin-containing barrier layer in sequence. For example, referring to fig. 2, a first metal electrode layer 51 is first electroplated on the tin-containing barrier layer 4, then a second metal electrode layer 52 is electroplated on the first metal electrode layer 51, and then a third metal electrode layer 53 is electroplated on the second metal electrode layer 52.
Optionally, the first metal electrode layer 51 includes a second metal, and after the electroplating of the first metal electrode layer 51, the method may further include: sintering the silicon substrate 1 plated with the first metal electrode layer 51 in a nitrogen atmosphere and/or an inert gas atmosphere; the sintering temperature is 300-500 ℃, the sintering time is 0.5-2 minutes, and the second metal-silicon alloy can be formed, and the second metal-silicon alloy generally has lower resistance, so that the loss can be reduced, and the conductivity between the electrode and the silicon substrate can be improved. For example, if the first metal electrode layer 51 is a nickel layer, the silicon substrate 1 plated with the first metal electrode layer 51 is sintered at 350 ℃ for 1 minute in a nitrogen atmosphere to form a low-resistance nickel-silicon alloy.
The first metal electrode layer 51 may be formed in all of the openings of the main gate formation region including the first electrode portion 3 and the openings of the fine gate formation region, that is, the first metal electrode layer 51 may be in contact with the tin-containing barrier layer in the region where the first electrode portion 3 is provided, and in contact with the silicon substrate in the opening region (fine gate formation region) where the first electrode portion is not provided, and since the openings other than the first electrode portion region penetrate the passivation film, the first metal electrode layer is in actual contact with the surface of the silicon substrate.
Optionally, the second metal contained in the first metal electrode layer 51 may be at least one of nickel, cobalt, titanium, and tungsten, and the first metal electrode layer 51 of the above materials may form a low-resistance metal silicide material with the silicon substrate 1, so as to reduce the contact resistance between the silicon substrate 1 and the surface electrode, and improve the battery efficiency.
In the case where the second electrode portion 5 includes 3 metal electrode layers, the second metal electrode layer 52 provided on the first metal electrode layer 51 and having a metal different from the second metal as a main component can function to improve electrical characteristics because it has a lower resistance. For example, the second metal electrode layer 52 has a lower resistance than the first metal electrode layer 51. Alternatively, the second metal electrode layer 52 may include at least one of aluminum, silver, and gold. The third metal electrode layer 53 provided on the second metal electrode layer 52 is a portion connected to another solar cell or a wiring material for external connection, and may include a material having a characteristic of making excellent connection with the wiring material. Alternatively, the third metal contained in the third metal electrode layer 53 may include tin and/or silver. The wiring material may be solder tape.
Alternatively, the height of the second electrode portion 5 is less than 10um, and the height of the second electrode portion 5 may be a height of the second electrode portion 5 on a side of the tin-containing barrier layer 4 away from the silicon substrate 1 in fig. 2 in a direction in which the first electrode portion 3 is stacked on the silicon substrate 1. The second electrode portion has two dimensions, length and width respectively, in a plane perpendicular to the direction in which the first electrode portion 3 and the silicon substrate 1 are laminated, the length and width being dimensions in two directions perpendicular to each other. Wherein the width is less than or equal to the length. The width of the second electrode portion 5 is less than 30 um. The size of the second electrode part is within the numerical range, so that the conductive performance is good, and the cost is relatively low.
In the embodiment of the invention, the first electrode part, the tin-containing barrier layer and the second electrode part form the electrode of the solar cell. The electrode may be a positive electrode or a negative electrode, and the electrode may be a front electrode located on the light-facing side of the silicon substrate, or may be a back electrode located on the backlight side of the silicon substrate, which is not limited in the embodiment of the present invention. For example, the first electrode portion, the tin-containing barrier layer, and the second electrode portion form a main gate electrode of the solar cell. Fig. 4 shows a schematic structural diagram of another solar cell according to an embodiment of the present invention. The fine gate electrode of the solar cell may consist of only the second electrode portion 5. Fig. 5 shows a schematic structural diagram of an electrode of a solar cell in an embodiment of the invention. Fig. 6 shows a schematic structural diagram of another solar cell electrode in an embodiment of the invention. In fig. 5, the main gate electrode 6 is a continuous strip. In fig. 6 the main gate electrode 6 is discontinuously arranged in dots. In both fig. 5 and 6, 7 are fine gate electrodes.
Before electroplating the second electrode portion, at least one electrical contact may be provided on the silicon substrate, said electrical contact being formed by printing a silver-or aluminium-containing metal paste and annealing. The power connection point is used for connecting the negative electrode of the electroplating power supply during electroplating so as to form each metal electrode layer of the electroplated second electrode part in the contact forming area on the surface of the silicon substrate.
Optionally, the electrical connection points may be symmetrically arranged on the silicon substrate, may be arranged on the whole main gate region to be formed, or may be formed in a plurality of discontinuous points in the main gate region, the electrical connection points in different main gate regions may be formed at one time by printing, the process is simple, and no additional power supply point is required. During electroplating, the metal electrode layer covers the point patterns to form a shape with a thin middle part and a thick edge.
Alternatively, the contact point may be formed not in the main gate region but on the deposited passivation film and located in the vicinity of the edge portion of the silicon substrate face or each corner portion of the silicon substrate. Such contact points can be formed by printing and sintering a burn-through metal electrode paste, for example, a conventional sintered Ag paste or Al paste. The distance between each contact point and the center of the silicon substrate is basically equal, so that the plating speed of each contact area is basically consistent during plating. Although the additional arrangement of the power supply points brings about a certain process and cost increase, the overall cost is less influenced because the number of the power supply points is smaller in the local arrangement. From the viewpoint of increasing the reliability of the battery pack, since the contact forming regions are formed by depositing the plated metal electrode layer and have substantially uniform heights throughout, stable and reliable connection can be obtained when the interconnection materials are connected.
Fig. 7 shows a schematic structural diagram of another solar cell according to an embodiment of the present invention. Fig. 8 shows a schematic structural diagram of another solar cell according to an embodiment of the present invention. Alternatively, referring to fig. 7 and 8, the solar cell may further include a passivated anti-reflection layer 8, and in fig. 7, the silicon substrate 1 may be composed of a silicon substrate 11 and an emitter 12 diffused on the silicon substrate 11, where the emitter 12 exists as a conductive region. The solar cell may further comprise a passivating antireflective layer 8, a tunneling layer 9, a doped polysilicon layer 10. Fig. 7 shows a double-sided battery, and a front electrode 13 and a back electrode 14 are respectively disposed on both sides of a silicon substrate 11. Fig. 8 shows a back junction cell, in fig. 8, the silicon substrate 1 is composed of a silicon substrate 11 and p-type polysilicon 15 and n-type polysilicon 16 deposited on the silicon substrate 11, the p-type polysilicon 15 and the n-type polysilicon 16 exist as conductive regions, the n-type electrode 17 is in electrical contact with the n-type polysilicon 16, and the p-type electrode 18 is in electrical contact with the p-type polysilicon 15. In fig. 2, 3, 4, 7, and 8, 2 is a passivation film.
In an embodiment of the invention, a solar cell is further provided, and the solar cell is prepared by any one of the solar cell production methods. The solar cell comprises a silicon substrate 1, a first electrode part 3, a tin-containing barrier layer 4 and a second electrode part 5, wherein the first electrode part 3 is positioned on the silicon substrate 1, the first electrode part 3 is provided with first metal particles, the tin-containing barrier layer 4 is positioned on the first electrode part 3, the mass content of tin in the tin-containing barrier layer 4 is more than or equal to 40%, and the second electrode part 5 is positioned on the tin-containing barrier layer 4. The second electrode portion 5 is provided galvanically on the tin-containing barrier layer 4. Specifically, the solar cell may refer to the description of the foregoing method embodiment, and fig. 2 to 8. The solar cell has the same or similar beneficial effects as the solar cell production method, and the details are not repeated herein in order to avoid repetition.
It should be noted that, for simplicity of description, the method embodiments are described as a series of acts or combination of acts, but those skilled in the art will recognize that the embodiments are not limited by the order of acts described, as some steps may occur in other orders or concurrently depending on the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred and that no particular act is required to implement the embodiments of the application.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element identified by the phrase "comprising an … …" does not exclude the presence of other identical elements in the process, method, article, or apparatus that comprises the element.
While the present invention has been described with reference to the particular illustrative embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but is intended to cover various modifications, equivalent arrangements, and equivalents thereof, which may be made by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (13)
1. A solar cell production method is characterized by comprising the following steps:
providing a silicon substrate;
providing a first electrode portion having first metal particles comprising silver on the silicon substrate;
forming a tin-containing barrier layer on the first electrode portion; the mass content of tin in the tin-containing barrier layer is more than or equal to 40 percent;
and electroplating a second electrode part on the tin-containing barrier layer.
2. The solar cell production method according to claim 1, wherein the step of forming a tin-containing barrier layer on the first electrode portion includes:
immersing the silicon substrate having the first electrode portion in a tin-containing solution to form a tin-containing barrier layer only on the first electrode portion and not to form a tin-containing barrier layer on the remaining portion of the silicon substrate having the first electrode portion;
and/or, applying a tin-containing solution on the first electrode portion;
the temperature of the tin-containing solution is 200-350 ℃.
3. The solar cell production method according to claim 2, wherein the silicon substrate having the first electrode portion is immersed in the tin-containing solution for a time of 1 to 10 seconds.
4. The solar cell production method according to claim 2, wherein after the step of forming a tin-containing barrier layer on the first electrode portion, the method further comprises:
removing a portion of the tin-containing barrier layer from a side away from the first electrode portion.
5. The solar cell production method of claim 4, wherein the step of removing a portion of the tin-containing barrier layer comprises:
scraping off part of the tin-containing barrier layer;
and/or, hot air purging to remove a portion of the tin-containing barrier layer;
and/or heating and dipping part of the tin-containing barrier layer by adopting a heating tool.
6. The solar cell production method according to claim 2, characterized in that, before the step of forming a tin-containing barrier layer on the first electrode portion, the method further comprises:
dissolving a tin-containing material to form the tin-containing solution for forming the tin-containing barrier layer; the tin-containing material includes: at least one of tin-lead alloy, tin-bismuth alloy, tin-lead-silver alloy, tin-aluminum alloy, tin-antimony alloy, tin-nickel alloy, tin-zinc alloy or tin-cadmium alloy.
7. The solar cell production method according to claim 1, wherein the step of providing the first electrode portion having the first metal particles on the silicon substrate includes:
printing a slurry including first metal particles on a silicon substrate;
sintering or curing the slurry to form a first electrode portion in electrical contact with the silicon substrate.
8. The method for producing a solar cell according to claim 1, wherein the first electrode portion is silver or silver aluminum paste.
9. The solar cell production method according to claim 1, wherein the second electrode portion includes a first metal electrode layer adjacent to the tin-containing barrier layer, and after the first metal electrode layer is formed by electroplating, the method further comprises:
sintering the silicon substrate electroplated with the first metal electrode layer in a nitrogen environment and/or an inert gas environment; the sintering temperature is 300-500 ℃, and the sintering time is 0.5-2 minutes.
10. The solar cell production method according to claim 1, wherein the second electrode part comprises a first metal electrode layer, a second metal electrode layer and a third metal electrode layer which are sequentially laminated, wherein the first metal electrode layer is close to the tin-containing barrier layer, and the first metal electrode layer comprises at least one of nickel, cobalt, titanium and tungsten; the second metal electrode layer comprises at least one of aluminum, silver and gold; the third metal electrode layer includes tin and/or silver.
11. A solar cell production method according to any one of claims 1-10, characterized in that the thickness of the tin-containing barrier layer is 0.1-10 um; the thickness of the tin-containing barrier layer is a dimension of the tin-containing barrier layer in a direction in which the silicon substrate and the first electrode portion are stacked.
12. The solar cell production method according to any one of claims 1 to 10, wherein the tin-containing barrier layer covers all surfaces of the first electrode portion opposite to the second electrode portion to isolate the first electrode portion from the second electrode portion.
13. A solar cell, characterized in that it is produced using the solar cell production method according to any one of claims 1 to 12.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952945A (en) * | 2014-03-31 | 2015-09-30 | 比亚迪股份有限公司 | Solar cell sheet and preparation method thereof and solar cell module with cell sheet |
| CN104952949A (en) * | 2014-03-31 | 2015-09-30 | 比亚迪股份有限公司 | Solar panel, preparation method thereof, and solar cell module with solar panel |
| CN106409928A (en) * | 2015-07-27 | 2017-02-15 | Lg电子株式会社 | Solar cell |
| CN111276551A (en) * | 2018-12-05 | 2020-06-12 | Lg电子株式会社 | Solar cell, method for manufacturing same, and solar cell panel |
-
2021
- 2021-03-24 CN CN202110316378.2A patent/CN115132860B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952945A (en) * | 2014-03-31 | 2015-09-30 | 比亚迪股份有限公司 | Solar cell sheet and preparation method thereof and solar cell module with cell sheet |
| CN104952949A (en) * | 2014-03-31 | 2015-09-30 | 比亚迪股份有限公司 | Solar panel, preparation method thereof, and solar cell module with solar panel |
| CN106409928A (en) * | 2015-07-27 | 2017-02-15 | Lg电子株式会社 | Solar cell |
| CN111276551A (en) * | 2018-12-05 | 2020-06-12 | Lg电子株式会社 | Solar cell, method for manufacturing same, and solar cell panel |
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