CN114921821B - Electroplating device for filling holes of through holes and TGV/TCV hole metallization method - Google Patents
Electroplating device for filling holes of through holes and TGV/TCV hole metallization method Download PDFInfo
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- CN114921821B CN114921821B CN202210390510.9A CN202210390510A CN114921821B CN 114921821 B CN114921821 B CN 114921821B CN 202210390510 A CN202210390510 A CN 202210390510A CN 114921821 B CN114921821 B CN 114921821B
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
- C25D21/14—Controlled addition of electrolyte components
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/20—Electroplating using ultrasonics, vibrations
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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Abstract
The invention discloses an electroplating device for filling holes of through holes and a hole metallization method. The device is suitable for through holes without a preplating seed layer, and simultaneously can simultaneously plate a plurality of wafer plating pieces, and the hole metallization method can promote liquid convection to accelerate copper ion transmission in the holes through a stirring device, realize that the plating pieces are fixed around a plating tank, and set reasonable plating hole sizes and quantity according to requirements. The electroplating device designed by the invention can perform hole filling copper plating technology on the through holes on the glass, ceramic or resin matrix. The conductive backboard component can separate a plated piece from a conductive layer after electroplating is completed. The technology adopts the processes of preparing the wafers, cleaning, laser drilling, cleaning and electroplating, the process flow is greatly simplified, the cost is reduced, the reliability is improved, two procedures of manufacturing butterfly wings and filling blind holes through direct current by pulse electroplating are avoided, a seed layer is not required to be manufactured in a through hole, and the procedures are less, so that the cost is saved, and the efficiency is improved.
Description
Technical Field
The invention belongs to the technical field of electroplating of electronic circuits, relates to a glass through hole (TGV), a ceramic through hole (TCV) and a circuit board through hole interconnection technology, and particularly relates to a device and a hole filling electroplating method which are applicable to electroplating of a plurality of wafer plating pieces at the same time without a preplating seed layer in a through hole.
Background
In recent years, a glass through-hole process (TGV) expanded by a TSV process has attracted a lot of attention in industry due to advantages of adjustable thermal expansion coefficient, low insertion loss, high resistivity, and the like of glass. The vertical short wire interconnection mode is used for replacing the traditional lead interconnection among chips through the through hole, the high integration level is realized while the product is miniaturized, the performance of the product is greatly improved, and the glass through hole is used as a material for possibly replacing a silicon-based adapter plate and has wide application prospect in the fields of radio frequency devices, micro Electro Mechanical Systems (MEMS) packaging, photoelectric system integration and the like. Unlike silicon-based via interconnection technology, TGV or TCV is mainly to adopt via filling technology to realize interconnection and intercommunication between stacked devices, taking TGV as an example, the electroplating device of the invention is adopted, a seed layer is not required to be plated in the via, and a composite conductive layer consisting of ultrathin copper foil and a stripping layer is attached to the outside of the via to realize direct filling technology without seed layer in the via. Compared with the conventional glass hole filling process flow (sheet preparation, cleaning, laser drilling, cleaning, sputtering an adhesion layer Cr, seed layer Cu, photoetching and imaging treatment, electroplating copper on a seed layer until the entrance of a hole is filled, removing photoresist for a mask, homogenizing a layer of glue on an electroplated layer again, electroplating again by taking the electroplated copper at an orifice as the seed layer until the through hole is completely filled), the process flow of the invention adopts the non-seed layer electroplating copper filling process of sheet preparation, cleaning, laser drilling, cleaning, electroplating is greatly simplified, the cost is reduced, and the reliability is improved. In the aspect of electroplating devices, such as those designed by coating and cleaning plane et al (patent publication No. CN 211872138U), the main emphasis is on driving the flow of the plating solution by the rotation of the stirring plate. Ni Yulin et al (patent publication No. CN 111893544A) discloses a stirring plate and a plating bath device of a rocking mechanism, wherein the stirring plate is used for carrying out directional movement to uniformly stir a plating solution. The patent mentioned above all utilizes the mode that liquid disturbed flow made the PCB board both sides produce pressure differential and impels the downthehole flow of liquid. The invention adopts the wafer sizes and the plating hole numbers with different specifications to be arranged around the tank body according to actual production requirements, and adopts a mechanical stirring mode to perform hole filling plating, so that the formula of the plating solution and the plating process have no special requirements, and the complexity of a plating device is simplified.
Disclosure of Invention
The invention aims to provide a plating method and a plating device for simultaneously filling holes of through holes of a plurality of plating pieces, which can realize the through hole filling copper plating technology on glass, ceramic or resin substrates through the plating device designed by the invention while no seed layer is required to be manufactured in the through holes. For the through hole metallization with larger thickness, the electroplating process avoids two processes of manufacturing butterfly wings through pulse electroplating and filling blind holes through direct current, and a seed layer is not required to be manufactured in the through hole, so that the cost can be saved, and the efficiency can be improved.
In order to solve the characteristics of simplicity and low cost of a laboratory electroplating device, the embodiment of the invention provides an electroplating device which can place a wafer plating sheet in plating holes around a plating tank and realize bottom-up copper deposition of the bottom of a through hole in a wafer through a stripping layer and a conducting layer. The electroplating device is used for realizing the bottom-up copper deposition at the bottom of a non-conductive through hole as a cathode by attaching a layer of conductive back plate, such as an ultrathin copper foil (or other conductive layers, metal or non-metal conductive materials) as the conductive back plate on the back surface of a plated piece.
According to the invention, the copper ion transmission rate is improved by stirring measures, so that the phenomenon of plating layer hollowness in micropores due to diffusion control effect is avoided, and the effectiveness of the plating solution is ensured. In addition, the successful separation of the conductive backboard as the conductive layer after the electroplating hole filling is completed is an important guarantee for simplifying the process flow of the conductive backboard. For example, the present invention provides a release layer formed on an ultra-thin conductive layer (conductive backing plate), which is typically composed of Cr, ni Co, mo, W, P, fe and their alloys or oxide or organic cover layers. The invention adopts an ultrathin copper metal layer as a conductive backboard,the copper foil on the substrate can be directly grinded and peeled by the aid of the copper etchant under the condition that the peeling layer is not manufactured, and the method has the characteristics of simple and reliable process. The invention can also absorb a layer of organic matters on the conductive backboard as a stripping layer, for example, an organic covering layer is manufactured on a copper foil as the conductive backboard as the stripping layer, and the stripping layer can be manufactured by using the method of the invention in a range of 0.5mol/L H 2 SO 4 Adding a proper amount of 1- (4-carboxyphenyl) -5-mercapto-1H-tetrazole or 1- (4-carboxyphenyl) -5- (mercaptotetrazole) -disodium or 3- (5-mercapto-1-tetrazolyl) sodium benzenesulfonate or a compound thereof as a pre-immersion liquid, immersing the conductive copper foil in the pre-immersion liquid for about 1 minute, taking the organic cover layer as a stripping layer, and connecting the cathode plating piece with the stripping layer conductive layer, and then carrying out a subsequent electroplating step.
Another object of the embodiments of the present invention is to provide a solution for performing a plurality of via electroplating and filling processes simultaneously. The electroplating device provided by the invention can realize simultaneous electroplating of four sides, such as 16 plated pieces. The device internally mounted has agitating unit, can carry out the controllable rotation of speed in the middle of the plating bath, drives the inside plating solution of plating bath and flows to form strong liquid exchange in the downthehole portion, guarantee plating solution validity, accelerate the copper deposition rate in downthehole portion, effectively avoided because downthehole plating solution exchange is untimely, the problem that the downthehole portion plating solution active ingredient reduces and leads to exists hollow.
It is another object of an embodiment of the present invention to provide a solution for controlling the level of the fluid inside a plating tank. The bottom of the inner tank of the electroplating bath is provided with a liquid valve pipeline device which is connected with the outside of the electroplating device. When the liquid level in the inner tank of the electroplating tank needs to be reduced, the inner tank of the electroplating tank is connected with the outside by opening a liquid valve at the bottom, and the plating solution in the inner tank starts to flow to the outside, so that the liquid level in the inner tank of the electroplating tank is reduced. When it is desired to supply the plating solution to the plating vessel, the plating solution may be pumped into the interior of the plating vessel by connecting the apparatus to a liquid pump.
The electroplating device provided by the invention comprises at least four pressing plate groups; at least one metal anode; at least one anode support; at least one conductive back plate; at least one through-hole dielectric plating; at least one plating bath; at least one liquid valve plumbing means; electroplating solution for through hole electroplating comprising a portion of an electroplating additive; at least one stirring device; at least one external power source; at least four heating devices. It should be noted that when the thickness and diameter of the through hole are relatively large, the plating piece can be subjected to vacuum treatment first, and then the plating can be performed after removing bubbles in the hole, or the plating can be performed in an ultrasonic environment, wherein the power capacity of the ultrasonic wave is tens to hundreds of kilowatts, and the sound intensity is from several watts per square centimeter to hundreds of watts.
The press plate assembly is individually comprised of at least one threaded screw, at least one insulated handle, at least one conductive metal electrode, at least one conductive backing plate, and at least one plated item. The metal screw is arranged in the outer tank of the electroplating tank with the screw hole, the electroplated part can be penetrated into the inner part by rotating, and the conductive backboard and the conductive metal electrode are pressed on the inner tank of the electroplating tank, so that the conductive backboard is tightly attached to the electroplating tank, and the purposes of supplying power to the conductive backboard and depositing copper on the backboard are realized. It should be noted that for holes that do not participate in electroplating, an insulating material of suitable size should be used to act as a filler sandwiched between the conductive metal electrode and the interior of the plating tank. The insulating material plays a role in isolating the conductive metal electrode from the electroplating liquid, and on the other hand, the stress on the pressing plate group is the same, so that the plated parts of the hole sites participating in electroplating are uniformly contacted with the electroplating liquid.
The conductive backboard material can be conductive cloth, conductive adhesive or conductive thin metal, and the conductive metal electrode is connected with the negative electrode of the external power supply for supplying power to the conductive backboard.
The conductive back plate should be large enough to cover four plated parts simultaneously. If the conductive back plate is made of metal, it may be an ultra-thin copper foil, or made of a metal having a solubility different from that of copper, such as zinc, aluminum, and alloys thereof. The conductive back plate is generally composed of a conductive layer and a release layer, and after the copper filling of the through holes is completed, the conductive back plate should be separated from the plated item by the release layer after the plating is completed or by being dissolved in a specific solution which should not react with copper.
The plating piece is mainly aimed at a wafer and is circular in shape, the diameter of the plating piece is between 20 and 1000um, under special conditions, through hole copper filling with the aperture smaller than 20um can be realized by adopting ultrasonic or low current density or vacuum negative pressure wetting and the like, and the plating piece can also be non-circular in shape, but the clamp is correspondingly adjusted so as to avoid liquid leakage and improve electric field line distribution.
The metal anode is mounted on an anode support, and the metal anode can be a soluble anode or an insoluble anode. Holes are arranged on the surface of the metal anode for preventing the flow of plating solution in the plating tank from being blocked. It should be noted that the holes on the surface of the metal anode should be staggered from the holes in the electroplating tank, so as to ensure that the cathode and the anode can be opposite.
The anode bracket comprises a vertical supporting rod, a transverse supporting rod and a metal electrode, and at least four metal clamps. The vertical support rod is connected with the inner groove of the electroplating bath, the metal electrode is connected with the anode of the external power supply, a wire is arranged in the transverse support rod, and two ends of the wire are respectively connected with the metal electrode and the metal clamp, so that the function of supplying power to a plurality of metal anodes is realized. The metal clamp comprises a screw, and can clamp the metal anode.
The electroplating bath comprises an electroplating bath outer tank and an electroplating bath inner tank. The outer tank of the electroplating tank provides a movable space for the pressing plate group, and the outer tank of the electroplating tank is provided with a hole with threads, so that the screw rod can be supported. The inner groove of the electroplating bath provides space for various electroplating functional devices, and a plurality of holes are formed in the inner groove and are used for communicating electroplating liquid and plating pieces. The bottom of the inner tank should contain a heating element to heat the plating solution when needed. It should be noted that the holes in the inner tank should not be larger than the size of the plating.
The liquid valve pipeline device comprises an inner pipeline, a valve control device and an outer pipeline. The inner pipeline is arranged at the bottom of the inner tank of the electroplating tank and is connected with the valve control device through the outer tank. The valve control device is internally provided with a valve, two sides of the valve are respectively provided with an inner pipeline and an outer pipeline, and the outer pipeline is connected with the outside. After receiving the signal of opening the valve, the control device can open the valve to communicate the inner pipeline with the outer pipeline, and then the plating solution in the inner tank of the plating tank can flow out of the plating tank through the pipeline. When the plating solution is needed to be added, the outer pipeline can be connected with the liquid pump, and the plating solution is pumped into the inner tank of the plating tank after the valve is opened.
The plating solution stirring device consists of at least one rotating rod, at least one base and a plurality of blades. The stirring device should be connected with the anode bracket, and the rotary rod should be installed between anode bracket and base. The rotation speed of the stirring device can be controlled, and after the stirring device is started, the rotating rod rotates according to a set speed and drives the plating solution in the whole plating bath tank to flow through a plurality of blades.
Drawings
In order to more clearly describe the technical solutions of the present patent, the following description refers to the accompanying drawings of the present application.
Fig. 1 is a schematic diagram of an overall structure of an electroplating apparatus according to the present invention.
Fig. 2 is a left side view of fig. 1 of an electroplating apparatus according to the present invention.
Fig. 3 is a left side view of a platen assembly of an electroplating apparatus according to the present invention.
Fig. 4 is a top view of a platen assembly of an electroplating apparatus according to the present invention.
Fig. 5 is a left side view of a plating tank structure of a plating apparatus according to the present invention.
Fig. 6 is a top view of a plating tank structure of a plating apparatus according to the present invention.
Fig. 7 is a schematic structural diagram of an anode plate of an electroplating device according to the present invention.
Fig. 8 is a schematic structural view of a stirring device and an anode support of an electroplating device according to the present invention.
FIG. 9 is a schematic diagram showing the relative positions of the components of an electroplating apparatus according to the present invention.
Fig. 10 is a schematic structural diagram of a liquid valve pipeline device of an electroplating device according to the present invention.
Reference numerals illustrate: 1-a platen set; 101-an insulating handle; 102-a screw; 103-a conductive metal electrode; 104-insulating material; 105-plating; 106-a conductive backplate; 2-electroplating bath; 201-an outer tank screw hole of the electroplating tank; 202-an electroplating bath outer tank; 203-an electroplating bath inner tank; 204-holes in the electroplating tank; 205-heating element; 3-anode plate; 301-metal anode holes; 302-a metal anode; 4-a stirring device and an anode bracket group; 401-vertical support bars; 402-transverse support bars; 403-metal clamp; 404-a metal electrode; 405-metal clamp screw; 406-stirring device blades; 407-stirring device rotating rod; 408-a stirring device base; 5-liquid valve plumbing; 501-an inner pipe; 502-valve control means; 503-an outer pipe; 504-valve.
Detailed Description
The following describes the embodiments of the present invention in detail with reference to the drawings.
As shown in fig. 1 to 10, an electroplating device according to the present invention comprises a platen assembly 1, an electroplating bath 2, an anode plate 3, a stirring device, an anode support 4, and a liquid valve pipe device 5. The pressing plate group 1, the anode plate 3, the stirring device and the anode bracket 4, and the liquid valve pipeline device 5 are arranged in the electroplating bath 2. The electroplating device is used for simultaneously electroplating and filling holes on a plurality of through hole plating pieces without seed layer insulating materials, such as glass through holes, ceramic through holes and the like.
Specifically, as shown in fig. 3 and 4, the pressing plate set 1 is composed of an insulating handle 101, a screw 102, a conductive metal electrode 103, an insulating material 104, an electroplating piece 105 and a conductive back plate 106. The plating member 105 was subjected to a hydrophilic surface treatment liquid (volume ratio 98% H 2 SO 4 :30％H 2 O 2 =7: 3) After the modification, bubbles in the pores were removed by vacuum treatment. By rotating the screw, the conductive metal electrode 103, the conductive back plate 106, and the plating member 105 are pressed against the plating tank interior 203, and the plating member 105 corresponds to the plating tank interior hole 204. The relative positions of the conductive metal electrode 103, the plating member 105, the conductive backing plate 106, and the slot holes 204 in the plating tank are shown in FIG. 9. The insulating material 104 is changed in size and shape as needed and functions to separate the conductive metal electrode 103 from the plating bath slot 204 where the plating member 105 is not disposed, thereby preventing copper deposition on the surface of the conductive metal electrode 103. On the other hand, when the number of plated parts 105 is less than 4, the insulating material 104 having a size similar to that of the plated parts 105 is placed in the holes 204 in the remaining plating tankThe edge material 104 also serves to support the platen assembly 1 and balance the force distribution of the plated member 105.
Specifically, as shown in fig. 5 and 6, the structure of the plating tank 2 is composed of a screw hole 201 of the plating tank outer tank, a plating tank outer tank 202, a plating tank inner tank 203, a plating tank inner tank hole 204, and a heating element 205. The plating bath outer tank 202 is provided with a threaded plating bath outer tank screw hole 201, and the threads on the screw hole 201 correspond to the threads on the screw 102 of the pressing plate group 1, so that the functions of supporting and fixing the pressing plate group 1 are achieved. The function of the plating tank 203 is to combine with the screw 102 to tightly press the conductive metal electrode 103, the conductive back plate 106, and the plating member 105. The inner groove 203 of the plating tank has a hole 204 smaller than the plating member 105, and the hole 204 has the function of enabling the plating solution to contact with the plating member 105 and further enter the through hole to contact with the conductive back plate 106 in a stirring manner to form a conductive circuit, so that the plating process is smoothly performed. The heating element 205 is installed at the bottom of the plating tank 203 and should be controlled from the outside, and can be turned on to heat the plating solution when the plating system needs to be heated. After the platen set 1 is fixed, it is confirmed that there is no leakage, a proper amount of plating solution composed of copper sulfate, sulfuric acid, chloride ions and various plating additives is added to the plating tank inner tank 203.
Specifically, as shown in fig. 7, the anode plate 3 is formed by a metal anode hole 301 and a metal anode 302. The metal anode holes 301 may assist in plating solution flow. It should be noted that the plating bath slot 204 should be opposite the metal anode 302 portion. In the present embodiment, the metal anode 302 is formed of a phosphor copper metal plate, but the metal anode 302 may be formed of an insoluble anode. After a proper amount of electroplating solution is added into the electroplating tank inner groove 203, the anode plate 3 is pretreated, and the specific steps are that the anode plate is soaked in an acidic copper sulfate solution to remove oxides, cleaned, then is ultrasonically treated in a microetching solution for 30s, and cleaned, then is soaked in a sulfuric acid solution for 1min to activate the surface of the anode plate. After the cleaning, the anode plate 3 is placed in the plating tank inner tank 203 and clamped on the metal clamp 403, and the anode plate 3 is fixed by the metal clamp screw 405, and the relative positions of the anode plate 3 and the plating member 105 can be referred to as the relative positions of the metal anode 302 and the plating member 105 in fig. 9.
Specifically, as shown in fig. 8, the stirring device and the anode support 4 are composed of a vertical support rod 401, a transverse support rod 402, a metal clamp 403, a metal electrode 404, a metal clamp screw 405, a stirring device blade 406, a stirring device rotating rod 407, and a stirring device base 408. The support rods 401, 402 are mounted to the plating tank interior 203 to provide physical support. The metal clamp 403 and the metal clamp screw 405 are combined to fix the anode plate 3. The metal electrode 404 is connected with the positive electrode of the external power supply, is combined with the transverse supporting rod 402 and the metal clamp 403, and supplies power to the anode plate 3, so that the anode plate becomes the anode of the electroplating system. The stirring device is composed of a blade 406, a rotary rod 407 and a base 408, and should be controlled from the outside. After the anode plate 3 is installed, the stirring device is turned on, the rotating rod 407 is rotated at a set speed to drive the blades 406 to move, and the flow of the plating solution in the plating tank inner tank 203 is driven in a physical manner, so that the plating solution in the plated through hole of the plating piece can flow along with the flow of the plating solution of the plating tank, and the effect of exchanging the plating solution inside and outside the hole is achieved.
After the plating apparatus is installed, as shown in fig. 9, parameters such as an external power source, starting plating, a plating time, a rotation speed of the stirring apparatus, a plating solution temperature, etc. are set according to conditions such as a size of the through holes of the plated item 105, an arrangement of the through holes, a density of the through holes, etc.
Specifically, as shown in fig. 10, the liquid valve pipe device 5 is composed of an inner pipe 501, a valve control device 502, an outer pipe 503 and a valve 504. The inner pipe 501 is installed below the plating tank inner tank 203 and communicates with the plating tank inner tank. The valve control 502 should be externally controlled and responsible for controlling the opening and closing of the valve 504. The outer pipe 503 is connected to the outside, and can perform both functions of guiding the plating solution in the plating tank inner tank 203 to the outside and introducing the plating solution into the plating tank inner tank 203. The valve 504 is responsible for separating the inner pipe 501 from the outer pipe 503, and the valve 504 should be kept closed during electroplating, and the valve 504 can be opened when the plating solution needs to be discharged or the plating solution needs to be added. After the plating process is completed, the valve 504 is opened by the valve controller 502 to drain the plating solution out of the plating tank interior 203 until the liquid level drops below the plating tank interior cavity 204, and then the valve is closed to remove the plating member.
The electroplated part 105 is subjected to antioxidation treatment to prevent copper from being oxidized, the conductive backboard 106 and the electroplated part 105 are separated, then the electroplated part 105 is manufactured into a metallographic section, and the filling condition of the through holes is observed through a metallographic microscope.
While the invention has been described in terms of specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.
Claims (4)
1. An electroplating device for filling through holes is characterized by comprising a 1-pressing plate group, a 2-electroplating bath, a 3-anode plate, a 4-stirring device, an anode bracket group and a 5-liquid valve pipeline device, wherein the 1-pressing plate group, the 3-anode plate, the 4-stirring device and the anode bracket group are arranged in the 2-electroplating bath;
the 1-pressing plate group consists of a 101-insulating handle, a 102-screw, a 103-conductive metal electrode, a 104-insulating material, a 105-electroplated part and a 106-conductive backboard, wherein the 105-electroplated part is provided with a through hole, and the 106-conductive backboard consists of a conductive layer and a stripping layer, so that the electroplated part and the conductive layer can be separated after electroplating is finished;
the 2-electroplating tank comprises a 202-electroplating tank outer tank and a 203-electroplating tank inner tank, wherein a threaded electroplating tank outer tank screw hole 201 is formed in the 202-electroplating tank outer tank, an electroplating tank inner tank hole 204 with the size smaller than that of the electroplated part 105 is formed in the 203-electroplating tank inner tank, and a 205-heating element is arranged at the bottom of the 203-electroplating tank inner tank;
the 3-anode plate consists of a 302-metal anode and a 301-metal anode hole on the 302-metal anode;
the 4-stirring device and anode bracket group consists of 401-vertical supporting rods, 402-transverse supporting rods, 403-metal clamps, 404-metal electrodes, 405-metal clamp screws, 406-stirring device blades, 407-stirring device rotating rods and 408-stirring device bases;
the 5-liquid valve pipeline device comprises a 501-inner pipeline, a 502-valve control device, a 503-outer pipeline and a 504-valve;
the threads on the surface of the 102-screw rod correspond to the threads of the screw hole of the outer tank of the 201-electroplating tank and are arranged on the outer tank of the 202-electroplating tank through the screw hole of the outer tank of the 201-electroplating tank; pressing the 103-conductive metal electrode, 105-plating member, 106-conductive backing plate against the surface of the 203-plating tank inner groove by rotating the 102-screw; the positions of the holes in the 204-electroplating tank correspond to the positions of the 105-electroplating pieces, and the sizes of the holes are smaller than the sizes of the 105-electroplating pieces, so that electroplating liquid can enter the through holes of the 105-electroplating pieces and contact the 106-conductive backboard to form conductive paths, and the purpose of electroplating and filling the through holes without preparing a seed layer in advance is achieved; when the number of the electroplated parts is less than 4, 104-insulating materials with the size similar to that of 105-electroplated parts are placed at holes in the residual 204-electroplating tank, and/or for holes which do not participate in electroplating, 104-insulating materials with proper sizes are clamped between 103-conductive metal electrodes and the inner tank of the electroplating tank;
the vertical support bar 401 and the horizontal support bar 402 are installed on the inner tank 203 of the electroplating tank to provide physical support; the metal clamp 403 and the metal clamp screw 405 are combined to fix the anode plate 3; the metal electrode 404 is connected with the positive electrode of the external power supply, is combined with the transverse supporting rod 402 and the metal clamp 403, and supplies power to the anode plate 3; the inner pipe 501 is installed at the bottom of the inner tank 203 of the plating tank, the outer pipe 503 is connected to the outside, and the valve 504 is responsible for separating the inner pipe 501 from the outer pipe 503.
2. A through-hole-filling plating apparatus according to claim 1, wherein the plating members provided in the plating apparatus are arranged around the plating tank.
3. The through-hole-filling electroplating device according to claim 1, wherein the conductive copper foil is adsorbed with a layer of organic matter as a peeling layer, comprising dissolving 1- (4-carboxyphenyl) -5-mercapto-1H-tetrazole or 1- (4-carboxyphenyl) -5- (mercaptotetrazole) -disodium or 3- (5-mercapto-1-tetrazole) benzenesulfonic acid sodium salt or a compound thereof in sulfuric acid as a conductive layer soaking solution, and soaking and adsorbing the conductive copper foil in the conductive layer soaking solution to obtain the peeling layer.
4. A through hole filling plating apparatus according to any one of claims 1 to 3, wherein the plated member is a wafer having a circular shape, and the diameter of the through hole is between 20 and 1000 μm.
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