CN106876562B - Novel micro LED structure and preparation method thereof - Google Patents
Novel micro LED structure and preparation method thereof Download PDFInfo
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The invention relates to a novel micro LED structure and a preparation method thereof. The novel micro LED structure comprises a micro blue LED chip and a light conversion film; the light conversion film covers the surface of the miniature blue light LED chip; the light conversion film contains red and green luminescent materials. The preparation method of the novel micro LED structure comprises the following steps: coating red and green luminescent materials on a transparent substrate to obtain a light conversion film; transferring the epitaxial blue light LED chip to a thin film transistor driving panel to obtain a miniaturized blue light LED chip; and covering the light conversion film on the surface of the micro blue light LED chip and packaging. When the micro LED full-color display is realized, the epitaxial layer monochromatic blue light micro LED chip is peeled from the substrate and transferred to the TFT driving panel, and the red and green micro LED chips do not need to be transferred in a large scale, so that the difficulty in the process of micro LED full-color display is greatly reduced.
Description
Technical Field
The invention relates to the field of LEDs, in particular to a novel micro LED structure and a preparation method thereof.
Background
The miniaturization technology of the LED refers to integrating a high-density micron-level small-size LED array on a driving chip, and pixel points of the LED array are reduced from the current millimeter level to the micron level. Compared with the traditional LED, the micro LED has the advantages that the resolution is greatly improved, the LED has the characteristics of high efficiency, high brightness, high response speed, energy conservation and the like, is self-luminous without a backlight source, and has wide application prospect in the aspects of softness, thinness and the like.
However, in the current LED manufacturing process, an epitaxial layer is grown on a sapphire substrate by a metal chemical vapor deposition method, and the display module and the driving circuit are based on a large-area glass substrate, so that in order to realize the display application of the LED, the LED epitaxial layer light-emitting material must be smoothly stripped from the sapphire substrate and then transferred to the glass substrate. Compared with the traditional LED manufacturing process, the manufacturing process is feasible because a single LED chip is larger, but for a micro LED chip, because the single chip only has the size of micron scale, how to realize the successful transfer of the micron-scale LED chip in large range and high precision is the key for realizing the micro LED technology, and the difficulty is larger in the field of pursuing high-precision display products. Particularly, for a single-color micro LED array, the micro LED array can be formed by one-time transfer or flip-chip packaging, and if full-color display is required, the micro chips of red, green and blue LEDs are transferred in different times to realize patterning. The requirements on the light efficiency, the wavelength consistency and the large-scale transfer success rate of the micron-scale chip are higher, the difficulty is higher, and the requirements become bottlenecks which restrict the development of the micro LED industry.
Disclosure of Invention
Therefore, the invention aims to provide a novel micro LED structure and a preparation method thereof, which reduce the difficulty of the existing micro LED in the process of realizing full-color display.
The purpose of the invention is realized by the following technical scheme:
a novel micro LED structure comprises a micro blue LED chip and a light conversion film; the light conversion film covers the surface of the miniature blue light LED chip; the light conversion film contains red and green luminescent materials.
Compared with the prior art, the invention takes the micro blue light LED chip as a self-luminous light source and an exciting light source, and adopts the light conversion film containing red and green luminous materials to replace the red and green micro LED chips which need to be transferred in sequence; the light conversion film emits red light and green light by absorbing blue light emitted by the miniaturized blue light LED chip; and finally, mixing the unabsorbed part of blue light with red light and green light emitted by the light conversion film to form a full-color active light-emitting display pixel lattice, thereby realizing the full-color display of the micro LED.
Further, the red and green luminescent materials are II-VI or III-V group quantum dots or perovskite quantum dots. The energy levels of the quantum dots are discrete, and when excited by the outside, electrons transit between the energy levels to emit light of a specific wavelength.
Furthermore, the red light emitting wavelength and the green light emitting wavelength of the red and green light emitting materials are 610-650 nm and 510-550 nm. The light-emitting wavelength of the existing blue light LED is generally 450-470 nm, so that the light-emitting wavelength of red light is 610-650 nm, and the light-emitting wavelength of green light is 510-550 nm, so that the red light, the green light and the blue light can be mixed to obtain white light with good display effect in the wavelength ranges.
Further, the size range of the miniature blue light LED chip is 2-20 mu m. If the size of the miniaturized blue light LED chip is too large, the resolution is reduced; if the size of the miniaturized blue light LED chip is too small, the difficulty and cost of chip transfer are increased, and large-area application is affected.
A preparation method of a novel micro LED structure comprises the following steps:
s1: coating red and green luminescent materials on a transparent substrate to obtain a light conversion film;
s2: transferring the blue LED chip after epitaxy is completed to a Thin Film Transistor (TFT) driving panel to obtain a miniaturized blue LED chip;
s3: and covering the light conversion film on the surface of the micro blue light LED chip, and packaging to obtain the novel micro LED structure.
Compared with the prior art, the red and green luminescent materials are accurately coated on the transparent substrate to form the light conversion film containing the red and green pixel points, and the corresponding red and green luminescent material display pixel dot matrix is excited by the accurately corresponding monochromatic blue light micro LED, so that red light and green light are emitted. When the full-color patterned display of the micro LED is realized, the epitaxial layer is peeled from the substrate and transferred to the TFT driving panel only by peeling the single-color blue light micro LED chip, and the large-scale transfer of the red and green micro LED chips is not needed, so that the difficulty in the process of the full-color display of the micro LED is greatly reduced. In addition, the transparent substrate separates the light conversion film containing red and green pixel points from the blue light micro LED, so that the direct contact between the luminescent material and the blue light micro LED is avoided, the erosion effect of high-energy blue light on the luminescent material is greatly reduced, and the service life of the product is prolonged.
Further, in step S1, the red and green emitting materials are coated on the transparent substrate by photolithography, stencil printing, silk screen printing or inkjet printing to form a light conversion film displaying red and green pixels.
Further, in step S2, the blue LED chip after epitaxy is first cut into micron-sized blue LED chips, and then the micron-sized blue LED chips are transferred to the TFT driving panel individually or in a large scale, so as to form a miniaturized blue LED chip displaying blue pixels.
Further, in step S2, the blue LED chip after epitaxy is first peeled off from the substrate by a physical or chemical method, then the blue LED chip is cut into micron-sized blue LED chips by an inductively coupled plasma etching method, and finally the micron-sized blue LED chips are bonded to the TFT driving panel to form a miniaturized blue LED chip displaying blue pixels.
Further, in step S3, the red and green pixel points on the light conversion film are accurately corresponded to the blue pixel points displayed by the miniaturized blue LED chip. The micro blue light LED chips correspond to the red and green pixel points one by one, and the blue light emitted by the micro blue light LED chips excites the red and green pixel points which correspond accurately to emit red light and green light, so that the display precision is improved.
Further, in step S3, one or more of silicone, polyurethane resin, polyacrylic resin, and polyester resin is used for encapsulation. After the packaging, the corrosion of water and oxygen in the environment to the red and green light luminescent materials can be reduced, the stability of the materials is improved, and the service life of the device is prolonged.
For a better understanding and practice, the invention is described in detail below with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic diagram of a novel miniaturized LED structure of the present invention.
Fig. 2 is a schematic view of a process for implementing a light conversion film based on inkjet printing technology according to the present invention.
Detailed Description
Aiming at the problem of how to realize the successful transfer of red, green and blue micron-level LED chips in a large range and with high accuracy in the full-color display of the existing micro-scale LED technology, the inventor discovers through research that the large-scale transfer of the red and green micro-scale LED chips can be avoided by using a light conversion film containing red and green luminescent materials to replace the red and green micron-level LED chips, and only the transfer of monochromatic blue light micro-scale LED chips is needed, and the light conversion film containing the red and green luminescent materials is excited to generate red light and green light, so that the full-color display of the micro-scale LED can be realized. Based on the research, a novel miniaturized LED structure and a preparation method thereof are further obtained. The following are detailed by examples.
Example 1
Please refer to fig. 1, which is a schematic diagram of a novel miniaturized LED structure according to the present invention. The novel miniaturized LED structure comprises a light conversion film 102 and a miniaturized blue LED chip 103; the upper surface of the light conversion film 102 bears red and green pixel points 101; the red and green pixel points 101 are accurately and correspondingly covered on the surface of the miniature blue LED chip 103; the miniaturized blue LED chip 103 is disposed on the TFT driving panel 104.
After the LED is powered on, the TFT driving panel 104 controls the micro blue LED chip 103 to emit light, the micro blue LED chip 103 emits blue light, red and green pixels 101 are excited to obtain red light and green light, and then the red light and the green light are mixed with residual blue light emitted by the micro blue LED chip 103 to realize red, green and blue full-color display.
The light conversion film 102 can be manufactured by photolithography, stencil printing, screen printing, inkjet printing, and other techniques. Referring to fig. 2, a schematic process diagram of a light conversion film based on the inkjet printing technique according to the present invention is shown. Specifically, the red and green phosphor pixels 202 are precisely printed on the surface of the transparent substrate 203 by a spray or ink jet device 201 to form a patterned red and green light conversion film that can be used for miniaturized LEDs. After high-precision red and green luminescent material display pixel points are formed on the transparent substrate, the transparent substrate is covered on the micro blue LED chip in a high-precision manner to obtain a red and green light conversion film, and the red and green micro LED chips do not need to be transferred in a large scale.
Compared with the prior art, the invention takes the Micro blue light LED chip as a self-luminous light source and an exciting light source, and adopts a light conversion film containing red and green luminous materials to replace red and green micron-sized Micro LED chips which need to be transferred in sequence; the light conversion film emits red light and green light by absorbing blue light emitted by the miniaturized blue light LED chip; and finally, mixing the unabsorbed part of blue light with red light and green light emitted by the light conversion film to form a full-color active light-emitting display pixel lattice, thereby realizing the full-color display of the micro LED.
Example 2
The preparation method of the novel micro LED structure comprises the following steps:
(1) the red and green luminescent materials are coated on a transparent substrate to obtain the light conversion film.
In the embodiment, the red and green luminescent materials are II-VI or III-V group quantum dots, and CdSe type quantum dots are preferred. Wherein the light-emitting wavelength of the red quantum dots is preferably 625 nm; the green quantum dots preferably emit light at a wavelength of 525 nm.
Respectively dissolving red and green quantum dots in a mixed solution of toluene and dichlorobenzene, wherein the volume ratio of toluene to dichlorobenzene is 1:1, and the mass fraction of the quantum dots in the mixed solution is 1%; adding a certain amount of photoresist to prepare a red and green quantum glue dispensing formula which accords with the photoetching process; and photoetching the prepared red and green quantum dot glue water on a transparent substrate in a red-green alternate mode to form an accurate red and green pixel dot matrix structure, wherein the size of the pixel is preferably 5 mu m, so that the red and green light conversion film based on the quantum dots is obtained.
(2) And transferring the epitaxial blue light LED chip to a thin film transistor driving panel to obtain the miniaturized blue light LED chip.
In the embodiment, a massive transfer technology is adopted, and firstly, a blue light LED wafer layer which is subjected to epitaxy is stripped from a wafer substrate through a physical or chemical method to obtain an independent light-emitting thin film layer; accurately cutting the light-emitting thin film layer into micron-sized blue light LED chips by using an inductively coupled plasma etching method, wherein the preferred size is 5 microns; and finally, the miniaturized blue light LED chip is connected on the TFT driving circuit board in a transfer bonding mode to form a blue display pixel.
(3) And covering the light conversion film on the surface of the micro blue light LED chip, and packaging to obtain the novel micro LED structure.
In the embodiment, the photoetched light conversion film containing accurate red and green pixel points is accurately covered on the surfaces of the miniature blue light LED chips, so that each miniature blue light LED chip corresponds to the red and green pixel points one by one, and the corresponding red and green pixel points are excited by the miniature blue light LED chips; and finally, packaging by using silica gel to form a micro LED structure based on red, green and blue full-color display of the quantum dots.
Example 3
The preparation method of the novel micro LED comprises the following steps:
(1) the red and green luminescent materials are coated on a transparent substrate to obtain the light conversion film.
In this embodiment, the red and green luminescent materials are perovskite quantum dots. The structural formula of the perovskite quantum dot is APbX3Wherein A ═ Cs and CH3NH3(ii) a X ═ Cl, Br or I, the red perovskite quantum dots are preferably CsPbI3The green perovskite quantum dot is preferably CsPbBr3And (4) quantum dots. The light-emitting wavelength of the red quantum dots is preferably 625 nm; the green quantum dots preferably emit light at a wavelength of 525 nm.
Respectively dissolving red and green quantum dots in a mixed solution of toluene, butanol and chlorobenzene, wherein the volume ratio of the toluene to the butanol to the chlorobenzene is 2:1:2, and the mass fraction of the quantum dots in the mixed solution is 1%; adding a certain amount of photoresist to prepare a red and green quantum glue dispensing formula which accords with the photoetching process; and photoetching the prepared red and green quantum dot glue water on a transparent substrate in a red-green alternate mode to form an accurate red and green pixel dot matrix structure, wherein the size of the pixel is preferably 5 mu m, so that the red and green light conversion film based on the quantum dots is obtained.
(2) And transferring the epitaxial blue light LED chip to a thin film transistor driving panel to obtain the miniaturized blue light LED chip.
In the embodiment, a massive transfer technology is adopted, and firstly, a blue light LED wafer layer which is subjected to epitaxy is stripped from a wafer substrate through a physical or chemical method to obtain an independent light-emitting thin film layer; accurately cutting the light-emitting thin film layer into micron-sized blue light LED chips by using an inductively coupled plasma etching method, wherein the preferred size is 5 microns; and finally, the miniaturized blue light LED chip is connected on the TFT driving circuit board in a transfer bonding mode to form a blue display pixel.
(3) And covering the light conversion film on the surface of the micro blue light LED chip, and packaging to obtain the novel micro LED structure.
In the embodiment, the photoetched light conversion film containing accurate red and green pixel points is accurately covered on the surfaces of the miniature blue light LED chips, so that each miniature blue light LED chip corresponds to the red and green pixel points one by one, and the corresponding red and green pixel points are excited by the miniature blue light LED chips; and finally, packaging by using silica gel to form a micro LED structure based on red, green and blue full-color display of the quantum dots.
Example 4
The preparation method of the novel micro LED comprises the following steps:
(1) the red and green luminescent materials are coated on a transparent substrate to obtain the light conversion film.
In the embodiment, the red and green luminescent materials are II-VI or III-V group quantum dots, and CdSe type quantum dots are preferred. Wherein the light-emitting wavelength of the red quantum dots is preferably 625 nm; the green quantum dots preferably emit light at a wavelength of 525 nm.
Respectively dissolving red and green quantum dots in a mixed solution of toluene and dichlorobenzene, wherein the volume ratio of toluene to dichlorobenzene is 1:1, and the mass fraction of the quantum dots in the mixed solution is 1%; adding a certain amount of photoresist to prepare a red and green quantum glue dispensing formula which accords with the photoetching process; and photoetching the prepared red and green quantum dot glue water on a transparent substrate in a red-green alternate mode to form an accurate red and green pixel dot matrix structure, wherein the size of the pixel is preferably 5 mu m, so that the red and green light conversion film based on the quantum dots is obtained.
(2) And transferring the epitaxial blue light LED chip to a thin film transistor driving panel to obtain the miniaturized blue light LED chip.
In this embodiment, a chip soldering technique is adopted, and the blue LED chip after epitaxy is first cut into miniaturized blue LED chips of a desired size, preferably 10 μm; and then the miniaturized blue LED chip is transferred to a TFT driving substrate at one time to form a blue display pixel.
(3) And covering the light conversion film on the surface of the micro blue light LED chip, and packaging to obtain the novel micro LED structure.
In the embodiment, the photoetched light conversion film containing accurate red and green pixel points is accurately covered on the surfaces of the miniature blue light LED chips, so that each miniature blue light LED chip corresponds to the red and green pixel points one by one, and the corresponding red and green pixel points are excited by the miniature blue light LED chips; and finally, packaging by using silica gel to form a micro LED structure based on red, green and blue full-color display of the quantum dots.
Compared with the prior art, the red and green luminescent materials are accurately coated on the transparent substrate to form the light conversion film containing the red and green pixel points, and the corresponding red and green luminescent material display pixel dot matrix is excited by the accurately corresponding monochromatic blue light micro LED, so that red light and green light are emitted. When the full-color patterned display of the micro LED is realized, the epitaxial layer is peeled from the substrate and transferred to the TFT driving panel only by peeling the single-color blue light micro LED chip, and the large-scale transfer of the red and green micro LED chips is not needed, so that the difficulty in the process of the full-color display of the micro LED is greatly reduced. In addition, the transparent substrate separates the light conversion film containing red and green pixel points from the blue light micro LED, so that the direct contact between the luminescent material and the micro LED is avoided, the erosion effect of high-energy blue light on the luminescent material is greatly reduced, and the service life of the product is prolonged.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (8)
1. A novel miniaturized LED structure which characterized in that: the LED comprises a plurality of miniature blue LED chips and a light conversion film; the light conversion film covers the surface of the miniature blue light LED chip; the light conversion film comprises a transparent substrate, and red and green luminescent materials, and is prepared by coating the red and green luminescent materials on the transparent substrate; the red and green luminescent materials are separated from the miniature blue LED chips through the transparent substrate and correspond to the miniature blue LED chips one to one;
the red and green luminescent materials are CdSe quantum dots, are respectively dissolved in a mixed solution of toluene and dichlorobenzene with the volume ratio of 1:1, are prepared into a red and green quantum dot water dispensing formula which accords with a photoetching process with a photoresist, and are coated on the transparent substrate in a photoetching mode;
or the red and green luminescent materials are perovskite quantum dots, and the structural formula of the red and green luminescent materials is APbX3Wherein A ═ Cs and CH3NH3And X ═ Cl, Br or I are respectively dissolved in a mixed solution of toluene, butanol and chlorobenzene in a volume ratio of 2:1:2, and are prepared into a red and green quantum dispensing water formula which accords with a photoetching process with a photoresist, and then the red and green quantum dispensing water formula is coated on a transparent substrate in a photoetching mode.
2. The novel miniaturized LED structure of claim 1 wherein: the red and green luminescent materials have red light luminescent wavelength of 610-650 nm and green light luminescent wavelength of 510-550 nm.
3. The novel miniaturized LED structure of claim 2 wherein: the size range of the miniature blue light LED chip is 2-20 mu m.
4. A preparation method of a novel micro LED structure is characterized by comprising the following steps: the method comprises the following steps:
s1: coating red and green luminescent materials on a transparent substrate to obtain a light conversion film; the method comprises the following steps:
respectively dissolving red and green quantum dots in a mixed solution of toluene and dichlorobenzene, wherein the volume ratio of toluene to dichlorobenzene is 1:1, and the mass fraction of the quantum dots in the mixed solution is 1%; adding photoresist to prepare a red and green quantum glue dispensing formula which accords with the photoetching process; photoetching the prepared red and green quantum dot glue water on a transparent substrate in a red and green alternate mode to form an accurate red and green pixel dot matrix structure so as to obtain a red and green light conversion film based on quantum dots; the red and green luminescent materials are CdSe quantum dots;
or respectively dissolving the red and green quantum dots in a mixed solution of toluene, butanol and chlorobenzene, wherein the volume ratio of the toluene, the butanol and the chlorobenzene is 2:1:2, and the mass fraction of the quantum dots in the mixed solution is 1%; adding photoresist to prepare a red and green quantum glue dispensing formula which accords with the photoetching process; photoetching the prepared red and green quantum dot glue water on a transparent substrate in a red and green alternate mode to form an accurate red and green pixel dot matrix structure so as to obtain a red and green light conversion film based on quantum dots; the red and green luminescent materials are perovskite quantum dots, and the structural formula of the perovskite quantum dots is APbX3Wherein A ═ Cs and CH3NH3X ═ Cl, Br, or I;
s2: transferring the epitaxial blue light LED chips onto a thin film transistor driving panel to obtain a plurality of miniaturized blue light LED chips;
s3: covering the light conversion film on the surface of the micro blue light LED chip, so that the red and green luminescent materials and the micro blue light LED chip are separated by the transparent substrate and are in one-to-one correspondence with the micro blue light LED chip, and then packaging to obtain the novel micro LED structure.
5. The method of claim 4, wherein the method comprises the steps of: in step S2, the blue LED chip after epitaxy is first cut into micron-sized blue LED chips, and then the micron-sized blue LED chips are transferred to the thin film transistor driving panel individually or in large scale to form a miniaturized blue LED chip displaying blue pixels.
6. The method of claim 4, wherein the method comprises the steps of: in step S2, the blue LED chip after epitaxy is physically or chemically peeled off from the substrate, the blue LED chip is cut into micron-sized blue LED chips by using an inductively coupled plasma etching method, and the micron-sized blue LED chips are bonded to the thin film transistor driving panel to form a miniaturized blue LED chip displaying blue pixels.
7. The method of manufacturing a novel miniaturized LED structure according to claim 5 or 6, characterized in that: in step S3, the red and green pixels on the light conversion film are accurately mapped to the blue pixels displayed by the miniaturized blue LED chip.
8. The method of claim 7, wherein the method comprises the steps of: in the step S3, one or more of silica gel, polyurethane resin, polyacrylic resin, and polyester resin is used for encapsulation.
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