CN114806726A - 一种用于led制程的去蜡液 - Google Patents
一种用于led制程的去蜡液 Download PDFInfo
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
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- 238000005260 corrosion Methods 0.000 claims description 5
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- QEKATQBVVAZOAY-UHFFFAOYSA-M sodium;4-propan-2-ylbenzenesulfonate Chemical group [Na+].CC(C)C1=CC=C(S([O-])(=O)=O)C=C1 QEKATQBVVAZOAY-UHFFFAOYSA-M 0.000 claims description 4
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- 229910019142 PO4 Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
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- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
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- HELHAJAZNSDZJO-OLXYHTOASA-L sodium L-tartrate Chemical compound [Na+].[Na+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O HELHAJAZNSDZJO-OLXYHTOASA-L 0.000 description 1
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical group [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 1
- 235000010234 sodium benzoate Nutrition 0.000 description 1
- 235000011004 sodium tartrates Nutrition 0.000 description 1
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- 125000003944 tolyl group Chemical group 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
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- C11D3/04—Water-soluble compounds
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Abstract
本发明公开了一种用于LED制程的去蜡液,属于湿电子化学品领域,主要应用于半导体晶圆制造中。该去蜡液通过特定的阴离子表面活性剂、有机溶剂、助溶剂、潜溶剂的优化组合,极大的降低体系表面张力,具有突出的渗透与分散性能,同时具有较强的耐温能力,成本低、去蜡效率高,在较低工作温度下也可以去满足工艺要求,对键合蜡的溶解性高,使用寿命长,材料组成对环境友好,能够满足LED制程的工艺要求。
Description
技术领域
本发明属于半导体制造领域,具体涉及一种用于LED制程的去蜡液。
背景技术
随着半导体行业的发展, 晶片尺寸逐步向大尺寸方向发展。键合蜡抛光逐步成为大直径晶片的主要抛光方式。为了增加LED 芯片的亮度, 对于厚度较薄的晶片而言, 由于键合蜡抛光是将晶片完全固定在基板上, 具有在抛光过程中不易碎片的特点, 因此也成为厚度较薄晶片的主要抛光方式。由于采用有蜡抛光的方式对晶片进行抛光, 去除晶片背表面的蜡, 防止多余的蜡对晶片正表面形成沾污造成不良, 就必须增加晶片去蜡的工艺过程。
传统方法, 采用有机溶剂进行去蜡,多个去蜡槽放入不同的有机溶剂,按顺序超声浸泡除蜡,目前常用的有机溶剂为甲苯/四氯化碳/三氯乙烯等进行去蜡。该方案清洗效果优异,但缺点是其产生的有机废液对环境不友好,且难溶于水。随着人们环保意识的增强,开发应用一种水溶性的去蜡液,能够和水以一定比例互溶,可以有效的适用于现用工艺条件,去蜡效果高效干净对环境友好,具有极大的市场需求。同时,由于减薄后的晶片,如果晶片翘曲度大,在高温的除蜡过程中,由于热胀冷缩现象或会引起破裂,因此如能降低去蜡液的工作温度,也会降低增加良率。
发明内容
为解决上述技术问题,本发明提供一种LED制程使用的去蜡液,该去蜡液为水溶性混合物,通过特定的表面活性剂和助剂优化组合,可以较低的加热温度取得较好的去蜡效果,满足现有工艺条件,使用寿命长久,对环境友好。
本发明解决其技术问题所采用的方案为:
一种用于LED制程的去蜡液,以质量百分含量计,其组成如下:
无机碱 1%-5%;
阴离子表面活性剂 5%-10%;
助溶剂 2%-5%;
有机溶剂 20%-40%;
潜溶剂 1%-5%;
缓蚀剂 1%-5%
去离子水 余量;
总质量分数之和为100%。
上述用于LED制程的去蜡液中,所述无机碱是选自氢氧化钾、氢氧化钠中的一种,其中优选氢氧化钾。碱性对有机物的除去有较好的效果,适当的pH下能够提高去蜡液的洗净能力。氢氧化钾、氢氧化钠易于采购,使用量小成本低。
上述用于LED制程的去蜡液中,所述阴离子表面活性为C14-16 烯基磺酸钠,该表面活性剂由于具有磺酸基,因此在碱性条件下具有非常优异的稳定性,具有突出的渗透与分散性能,其长碳链的分子结构与键合蜡分子结构相似,相似相溶的特性可以更有效的除去键合蜡。
上述用于LED制程的去蜡液中,所述助溶剂为异丙苯磺酸钠,能提高表面活性剂的表面活性,起到降低成本、提高清洗效率;同时异丙苯磺酸钠有较短的烷基碳链,水溶性强,在去蜡液中会增溶其它通常不溶性的分子,有助于其他杂质类污染物的溶解。
上述用于LED制程的去蜡液中,所述有机溶剂为异丙醇。异丙醇对键合蜡有显著的溶解作用,增强去蜡液体系对键合蜡的溶解度,异丙醇和水能以氢键结合,能够降低体系的挥发性。
上述用于LED制程的去蜡液中,所述潜溶剂为2,6-二羟甲基吡啶。2,6-二羟甲基吡啶能够加大键合蜡的溶解性,增强去蜡液的使用寿命。
上述用于LED制程的去蜡液中,所述缓蚀剂二水合柠檬酸钠。能有效稳定pH,保证长时间去蜡液使用的均一性。
上述用于LED制程的去蜡液中,所述去离子水为电子级去离子水,在25℃时,其电阻率不低于18MΩ。
本发明的显著优点在于:无机碱提供的碱性环境能有效提高清洗效率,高效去蜡,同时对产品中油脂类的污染物有较好的清除效果,且后续工段易清洗;特定的阴离子表面活性剂C14-16 烯基磺酸钠,极大的降低体系表面张力,亲水基为磺酸基,具有突出的渗透与分散性能,同时具有较强的耐温能力,长碳链结构具有显著的去蜡能力;助溶剂异丙苯磺酸钠的添加,强化改善了溶液的表面化学性质,从而提高表面活性剂的表面活性,起到降低成本、提高效率,而且其强水溶性可增溶其它通常不溶性化合物的分子;该体系组成的去蜡液具有水溶液,可以与水以一定比例互溶,在较低工作温度下也可以去蜡高效彻底,满足工艺要求,对键合蜡的溶解性高,使用寿命长,材料组成对环境友好,能够满足LED制程的工艺要求。
具体实施方式
下面将结合本发明实施例,对本发明实施例中的技术方案进行清楚完整的描述,本发明的示意性实施方式及其说明仅用于解释本发明,并不作为本发明的限定。
实施例中所使用的实验方法如无特殊说明,均为常规方法。
实施例中所用的材料、试剂等,如无特殊说明,均可从商业途径得到。
实施例和比较例:一种用于LED制程的去蜡液。
根据下表1所示的组成和质量百分含量分别制备了实施例和比较例的去蜡液。其配制方法为:常温下先将去离子水加入搅拌釜,在60r/min的转速下依次加入其他各组分,每种材料投入后搅拌至体系澄清后再添加下一种材料;全部添加完毕后,继续搅拌30分钟。然后再依次通过5μm和0.5μm的两道滤芯进行过滤,最终获得所述去蜡液。
AOS--C14-16 烯基磺酸钠;NaCS--异丙苯磺酸钠;IPA--异丙醇;
DHMP--2,6-二羟甲基吡啶;SCDH--二水合柠檬酸钠;
MOA-9P--脂肪醇醚磷酸酯;SAS--仲烷基磺酸钠;SB--苯甲酸钠;
Glu--葡萄糖;ST--酒石酸钠。
实验例:去蜡液性能的测定实验
为了评价上述实施例1-6和对比例1-9的数种去蜡液组合物的性能,通过下述试验进行测试。
1、低工作温度(55℃)去蜡性能评定
通常为保证键合蜡的除去,提升去蜡液的工作温度(一般是80℃),使键合蜡更容易融化会获得更好的去蜡效果。但是较高的工作温度会使有轻微翘曲的晶片在下来的清洗中因为热胀冷缩的原因易于破裂。本实验用于测试在低工作条件下,去蜡液的去蜡效果。
将去蜡液加入超声清洗槽内,加热至55℃。调节超声频率为850kHz。将同一批次的含蜡晶片放入载具中,使晶片垂直放入超声清洗槽。浸泡5分钟后,用去离子水漂洗2道,高纯氮气吹干。通过光学显微镜观察键合蜡的清洗情况。
评价效果如下:
○:晶片表面无键合蜡的残留;
△:晶片表面有少量键合蜡残留;
×:晶片表面有十分明显的键合蜡残留。
2、去蜡液易漂洗性测试。
准备4个500mL烧杯,标注1、2、3、4、5号烧杯,分别添加250mL去离子水,20℃时,用电导率仪测得去离子水电导率并记下数值。将同一批次去蜡清洗并经过氮气吹干后的晶片,先投入1号烧杯,浸泡15s后取出放入2号烧杯,同样浸泡15s后取出放入3号烧杯,以此类推到5号烧杯后取出样片。按烧杯序号测量清洗后杯内去离子水的电导率,当烧杯内洗后的去离子水和未使用的去离子水电导率一致时,烧杯序号越小,表面去蜡液越易漂洗。
评价效果如下:
○:≤3号
△:4、5号
×:>5号
3、挥发度测试(使用寿命)
将去蜡液放置于统一直径的烧杯中,15分钟加热到80℃,并维持3小时。测定其挥发度。
挥发度(%)= (%)=[(实验开始时,去烧杯+蜡液质量)-(3小时后,烧杯+去蜡液质量)/ 实验开始时,去烧杯+蜡液质量]×100
评价效果如下:
○:<1%
△:1%-5%
×:>5%
4、键合蜡溶解度测试(使用寿命)
取100g去蜡液于250mL烧杯中,磁力搅拌下加热至60℃(低温工作温度)并维持恒定,将键合蜡碾成粉末,逐克添加至去蜡液中,观察溶解现象评判去蜡液对键合蜡的溶解度。
评价效果如下:
○:>5g
△:2g-5g
×:<1g
测试结果示于表2中
通过表1表2的实验结果可以看出:符合配比要求的各个实施例,均有较好的低工温去蜡效果,同时易于漂洗,可以长时间使用;比较例1没有添加阴离子表面活性剂,所以去蜡的清洗效果很差;对比例2选用的是非离子表面活性剂,在清洗、漂洗方面都有加大差距;对比例3选用仲烷基磺酸钠为类似于C14-16 烯基磺酸钠,但是实际的使用效果还是有明显的差距;对比例4没有添加助溶剂,直接影响到了除蜡效果和使用寿命;对比例5将助溶剂替换为苯甲酸钠,清洗效果达不到要求,并且在同等漂洗条件下更后有残留;对比例6没有2,6-二羟甲基吡啶对溶解度的加成,对键合蜡的溶解性大打折扣;对比例7用同样含有氢键的葡萄糖做潜溶剂,但是实际使用效果还有差距;对比例8没有添加缓蚀剂,太强的pH对体系的稳定性有影响,导致去蜡效果不足;对比例9就添加酒石酸钠为缓冲溶剂,在低工作温度下除蜡效果还是有一定差距,漂洗性能也稍差,可能会有残留导致良率波动。
综上,本发明的积极进步结果在于:碱性的去蜡清洗剂,通过特定的阴离子表面活性剂C14-16 烯基磺酸钠与有机溶剂、助溶剂、潜溶剂的优化组合,极大的降低体系表面张力具有突出的渗透与分散性能,同时具有较强的耐温能力,成本低、去蜡效率高,在较低工作温度下也可以去满足工艺要求,对键合蜡的溶解性高,使用寿命长,材料组成对环境友好,能够满足LED制程的工艺要求。
上述实施例对本发明进行了详细描述,但其只是作为范例,并非因此限制本发明的专利范围。凡是利用本发明说明书对本发明进行的等同任何修改和替代也都在本发明的范畴之中,均包括在本发明的专利保护范围内。
Claims (9)
1.一种用于LED制程的去蜡液,其特征在于,以质量百分含量计,其组成如下:
无机碱 1%-5%;
阴离子表面活性剂 5%-10%;
助溶剂 2%-5%;
有机溶剂 20%-40%;
潜溶剂 1%-5%;
缓蚀剂 1%-5%
去离子水 余量;
总质量分数之和为100%。
2.根据权利要求1所述的用于LED制程的去蜡液,其特征在于,所述无机碱为氢氧化钾或氢氧化钠。
3.根据权利要求2所述的用于LED制程的去蜡液,其特征在于,所述无机碱为氢氧化钾。
4.根据权利要求1所述的用于LED制程的去蜡液,其特征在于,所述阴离子表面活性为C14-16 烯基磺酸钠。
5.根据权利要求1所述的用于LED制程的去蜡液,其特征在于,所述助溶剂为异丙苯磺酸钠。
6.根据权利要求1所述的LED制程使用的去蜡液,其特征在于,所述有机溶剂为异丙醇。
7.根据权利要求1所述的用于LED制程的去蜡液,其特征在于,所述潜溶剂为2,6-二羟甲基吡啶。
8.根据权利要求1所述的用于LED制程的去蜡液,其特征在于,所述缓蚀剂二水合柠檬酸钠。
9.根据权利要求1所述的用于LED制程的去蜡液,其特征在于,所述去离子水为电子级去离子水,在25℃时,其电阻率不低于18MΩ。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991000336A1 (en) * | 1989-06-29 | 1991-01-10 | Buckeye International, Inc. | Improved aqueous cleaner/degreaser compositions |
EP2824103A1 (en) * | 2013-07-09 | 2015-01-14 | Cadila Pharmaceuticals Limited | An improved process for the preparation of Rupatadine Fumarate |
CN105646334A (zh) * | 2014-11-25 | 2016-06-08 | 天津工业大学 | 一种2,6-吡啶二甲醇的制备方法 |
CN108865542A (zh) * | 2018-08-22 | 2018-11-23 | 江西宝盛半导体能源科技有限公司 | 一种去蜡液及其制备方法与应用 |
CN112662487A (zh) * | 2021-01-21 | 2021-04-16 | 福建省佑达环保材料有限公司 | 一种tft基板减薄抛光后清洗剂 |
CN112760664A (zh) * | 2020-12-07 | 2021-05-07 | 江苏和兴汽车科技有限公司 | 一种弱碱性脱脂除蜡一体剂及其制备方法 |
-
2022
- 2022-05-31 CN CN202210603446.8A patent/CN114806726B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991000336A1 (en) * | 1989-06-29 | 1991-01-10 | Buckeye International, Inc. | Improved aqueous cleaner/degreaser compositions |
EP2824103A1 (en) * | 2013-07-09 | 2015-01-14 | Cadila Pharmaceuticals Limited | An improved process for the preparation of Rupatadine Fumarate |
CN105646334A (zh) * | 2014-11-25 | 2016-06-08 | 天津工业大学 | 一种2,6-吡啶二甲醇的制备方法 |
CN108865542A (zh) * | 2018-08-22 | 2018-11-23 | 江西宝盛半导体能源科技有限公司 | 一种去蜡液及其制备方法与应用 |
CN112760664A (zh) * | 2020-12-07 | 2021-05-07 | 江苏和兴汽车科技有限公司 | 一种弱碱性脱脂除蜡一体剂及其制备方法 |
CN112662487A (zh) * | 2021-01-21 | 2021-04-16 | 福建省佑达环保材料有限公司 | 一种tft基板减薄抛光后清洗剂 |
Non-Patent Citations (1)
Title |
---|
田俐: "CO2 开关型表面活性剂聚酯烯基磺酸钠的合成及其乳化性能", 复合材料学报, vol. 38, pages 1 - 8 * |
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