CN114785311A - 弹性波装置芯片和其制造方法、弹性波装置及包含弹性波装置芯片或弹性波装置的模块 - Google Patents

弹性波装置芯片和其制造方法、弹性波装置及包含弹性波装置芯片或弹性波装置的模块 Download PDF

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Publication number
CN114785311A
CN114785311A CN202210561924.3A CN202210561924A CN114785311A CN 114785311 A CN114785311 A CN 114785311A CN 202210561924 A CN202210561924 A CN 202210561924A CN 114785311 A CN114785311 A CN 114785311A
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CN
China
Prior art keywords
wave device
elastic wave
device chip
piezoelectric element
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210561924.3A
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English (en)
Chinese (zh)
Inventor
本山惠一郎
小坂直弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyan Japan Technology Co ltd
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Sanyan Japan Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyan Japan Technology Co ltd filed Critical Sanyan Japan Technology Co ltd
Publication of CN114785311A publication Critical patent/CN114785311A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02015Characteristics of piezoelectric layers, e.g. cutting angles
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02047Treatment of substrates
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58Multiple crystal filters
    • H03H9/60Electric coupling means therefor
    • H03H9/605Electric coupling means therefor consisting of a ladder configuration
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6423Means for obtaining a particular transfer characteristic
    • H03H9/6433Coupled resonator filters
    • H03H9/6483Ladder SAW filters

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
CN202210561924.3A 2021-09-11 2022-05-23 弹性波装置芯片和其制造方法、弹性波装置及包含弹性波装置芯片或弹性波装置的模块 Pending CN114785311A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-148223 2021-09-11
JP2021148223A JP2023041080A (ja) 2021-09-11 2021-09-11 弾性波デバイスチップ、弾性波デバイス、その弾性波デバイスチップまたは弾性波デバイスを備えたモジュールおよび弾性波デバイスチップの製造方法

Publications (1)

Publication Number Publication Date
CN114785311A true CN114785311A (zh) 2022-07-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210561924.3A Pending CN114785311A (zh) 2021-09-11 2022-05-23 弹性波装置芯片和其制造方法、弹性波装置及包含弹性波装置芯片或弹性波装置的模块

Country Status (2)

Country Link
JP (1) JP2023041080A (ja)
CN (1) CN114785311A (ja)

Also Published As

Publication number Publication date
JP2023041080A (ja) 2023-03-24

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