CN114672252B - 一种无味氮化铝抛光液及其制备方法和应用 - Google Patents
一种无味氮化铝抛光液及其制备方法和应用 Download PDFInfo
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- 239000004471 Glycine Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
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- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本发明公开了一种无味氮化铝抛光液,其由以下质量浓度的原料组成:0.1~40%研磨剂颗粒、0.5~5%醇醚、0.5~20%氧化剂、0.2~5%pH稳定剂,余量为去离子水;且所述氮化铝抛光液pH值为2.5~4.5。本发明的氮化铝抛光液,不仅具有切削率高,表面质量稳定,循环使用寿命长的优点,而且无挥发性和重金属污染问题,易于长期储存;尤其适用于超精密光学器件或半导体功率器件的氮化铝表面抛光。本发明还公开了一种无味氮化铝抛光液的制备方法和应用。
Description
技术领域
本发明涉及氮化铝表面抛光的技术领域,尤其涉及一种无味氮化铝抛光液及其制备方法和应用。
背景技术
随着半导体工业的飞速发展,电子器件尺寸缩小,要求硅、氮化铝以及其他半导体晶片表面平整度达到纳米级。传统的平坦化技术,仅可实现局部平坦化,而化学机械抛光技术(CMP)不仅可以实现全局平坦化,而且在加工性能和速度上均优于传统的平坦化技术。
化学机械抛光技术就是用化学腐蚀和机械力对加工过程中的硅晶圆或其他衬底材料进行表面平滑处理;在化学腐蚀过程中,抛光液中的化学物质与衬底表面发生化学反应,生成比较容易除去的物质,进一步通过机械力,除去化学反应过程中所生成的物质。
由于氮化铝以机械强度高,散热性好,但在水的存在条件下容易水解产生刺鼻的氨味儿,在强氧化剂存在的抛光液中味道更是难以让人承受。
发明内容
鉴于以上现有技术的不足之处,本发明提供了一种无味氮化铝抛光液,以解决现有氮化铝抛光液效率低、易挥发、难以长期储存、循环使用寿命短和重金属污染问题,同时,提高晶圆表面切削率和表面质量。
为达到以上目的,本发明采用的技术方案为:
一种无味氮化铝抛光液,所述氮化铝抛光液由以下质量浓度的原料组成:0.1~40%研磨剂颗粒、0.5~5%醇醚、0.5~20%氧化剂、0.2~5%pH稳定剂,余量为去离子水;且所述氮化铝抛光液pH值为2.5~4.5。
优选地,所述研磨剂颗粒为氧化硅、氧化铝、氧化铈、氧化锰、氧化镁、氮化铝、碳化硼、钻石中的一种或多种物质。
优选地,所述醇醚为乙二醇和丙二醇的各种低碳醇醚中的一种或多种物质。本申请采用的醇醚限定为乙二醇和丙二醇类的二元醇醚物质,通过二元醇醚相对于采用一元醇醚,提高了磨料颗粒与水溶剂的亲和性,起到磨粒颗粒的悬浮、分散作用。进一步地,乙二醇的各种低碳醇醚包括但不限于乙二醇甲醚、乙二醇***、乙二醇丁醚;丙二醇的各种低碳醇醚包括但不限于丙二醇甲醚、丙二醇***。本申请醇醚进一步通过限定为碳4以下的醚类物质,以起到悬浮分散作用,采用碳5以上的长链醚物质,则会导致醇醚的疏水性增强,降低对研磨颗粒的悬浮分散功能。
优选地,所述氧化剂为羟胺、双氧水、过氧醋酸、硫代硫酸及其盐类中的一种或多种物质。
优选地,所述pH稳定剂为具有缓冲能力的添加剂,使得氮化铝抛光液稳定pH在2.5~4.5。
优选地,所述pH稳定剂为氨基酸、磺酸胺、磷酸胺、多元酸中的一种或多种物质。
本申请的另外一方面是提供一种如上述无味氮化铝抛光液的制备方法,所述制备方法的步骤为:称取固定含量的研磨剂颗粒,均匀分散在醇醚与去离子水中,搅拌均匀,加入氧化剂,搅拌均匀,采用pH稳定剂,调节pH值为2.5~4.5,得到所述氮化铝抛光液。
本申请的另外一方面是应用如上述无味氮化铝抛光液,将其用于氮化铝化合物的表面抛光。尤其适用于超精密光学器件、半导体功率器件的表面抛光。
本发明的有益效果:
本发明的氮化铝抛光液,解决了硅溶胶抛光液挥发性强,强氧化剂导致抛光液使用过程味道大等问题。
本发明的氮化铝抛光液,具有切削率高,表面质量稳定,循环使用寿命长的优点,尤其适用于难加工的含氮化合物氮化硅、氮化铝表面的超精密光学器件或半导体功率器件的表面抛光。
本发明的氮化铝抛光液,无挥发性问题,易于长期储存,是理想的半导体化合物晶圆制造的亚纳米级光洁度的氮化铝抛光液材料。
具体实施方式
以下描述用于揭露本发明以使本领域技术人员能够实现本发明。以下描述中的优选实施例只作为举例,本领域技术人员可以想到其他显而易见的变型。
实施例1
本实施例的氮化铝抛光液,其制备方法为:取800g水,50g乙二醇甲醚,搅拌均匀;然后加入100g 1μmα-氧化铝,加入100g的过硫酸钾,再加入20g丁二酸,用氢氧化钠pH至2.5得到所述氮化铝抛光液。
将制备得到的氮化铝抛光液用于抛光4”氮化铝晶片,设定抛光压力为5psi,抛光机下盘转速50RPM,上盘转速50RPM逆向,抛光时间60min。测试结果显示,SiC晶片的切削效率为5.31μm/hr,表面坑点消失,平滑。
将抛光液循环使用,连续抛光5个60min,SiC晶片的切削效率分别为6.33μm/hr,pH=2.57;6.37μm/hr,pH=2.62;6.34μm/hr,pH=2.80;6.29μm/hr,pH=2.98;和6.27μm/hr,pH=3.21;表面无坑点,平滑。抛光液氨气释放,但抛光过程无味。
将抛光液储存30天后,在相同条件下再次进行测试,测试结果显示,SiC晶片的切削效率为6.29μm/hr,表面坑点消失,平滑。
实施例2
本实施例的氮化铝抛光液,其制备方法为:取800g水,20g乙二醇甲醚,搅拌均匀;然后加入50g 1μmα-氧化铝,加入200g的双氧水,再加入10g甘氨酸,用硝酸pH至2.5,得到所述氮化铝抛光液。
将制备得到的氮化铝抛光液用于抛光4”氮化铝晶片,设定抛光压力为5psi,抛光机下盘转速50RPM,上盘转速50RPM逆向,抛光时间60min。测试结果显示,SiC晶片的切削效率为7.22μm/hr,表面坑点消失,平滑。
实施例3
本实施例的氮化铝抛光液,其制备方法为:取850g水,10g丙二醇甲醚,搅拌均匀;然后加入80g 1μm碳化硅,加入100g的双氧水,再加入15g乳酸,用氢氧化钠pH至2.5,得到所述氮化铝抛光液。
将制备得到的氮化铝抛光液用于抛光4”氮化铝晶片,设定抛光压力为5psi,抛光机下盘转速50RPM,上盘转速50RPM逆向,抛光时间60min。测试结果显示,SiC晶片的切削效率为6.87μm/hr,表面坑点消失,平滑。
实施例4
本实施例的氮化铝抛光液,其制备方法为:取750g水,30g乙二醇甲醚,搅拌均匀;然后加入150g 1.3μm氧化铈,加入300g的过硫酸钾,再加入50g磷酸,用氢氧化钠pH至2.5得到所述氮化铝抛光液。
将制备得到的氮化铝抛光液用于抛光4”氮化铝晶片,设定抛光压力为5psi,抛光机下盘转速50RPM,上盘转速50RPM逆向,抛光时间60min。测试结果显示,SiC晶片的切削效率为4.65μm/hr,表面坑点消失,平滑。
对比例1
本对比例的氮化铝抛光液,其制备方法为:取100g去离子水,加入800g80nm硅溶胶,搅拌均匀,pH值为8.7,得到本对比例的氮化铝抛光液。
将制备得到的氮化铝抛光液用于抛光4”氮化铝晶片,设定抛光压力为5psi,抛光机下盘转速50RPM,上盘转速50RPM逆向,抛光时间60min。测试结果显示,抛光过程中释放大量氨气,味道大,氮化铝晶片的切削效率2.37μm/hr,表面暗淡无光。
对比例2
本对比例的氮化铝抛光液,其制备方法基本与对比例1相同,其不同之处在于,研磨剂使用氧化铝,本对比例的氮化铝抛光液pH值为2.3。
相同测试条件下,测试结果显示,SiC晶片的切削效率为3.57μm/hr,表面有坑点。
将抛光液循环使用,连续抛光5个60min,SiC晶片的切削效率分别为3.50μm/hr,pH=4.3;3.56μm/hr,pH=6.7;3.24μm/hr,pH=9.1;3.11μm/hr,pH=10.3和3.02μm/hr,pH=10.5,表面有坑点。随抛光时间增长,抛光液pH快速上升,抛光液释放出氨气,味道难闻。
将抛光液储存30天后,在相同条件下再次进行1小时抛光测试,测试结果显示,SiC晶片的切削效率为3.38μm/hr,表面有坑点。
对比例3
本对比例的氮化铝抛光液,其制备方法基本与对比例1相同,其不同之处在于,氧化铝作为研磨剂,本对比例的氮化铝抛光液pH值为9.5。
相同测试条件下,测试结果显示,抛光过程中释放大量氨气,味道大,SiC晶片的切削效率为3.81μm/hr,表面暗淡无光。
将抛光液循环使用,连续抛光5个60min,SiC晶片的切削效率分别为3.71μm/hr,pH=9.97;3.73μm/hr,pH=10.31;3.74μm/hr,pH=10.52;3.74μm/h,pH=10.55和3.73μm/hr,pH=10.57。抛光过程中释放大量氨气,味道大,有坑点,表面暗淡无光。
将抛光液储存30天后,在相同条件下再次进行测试,测试结果显示,SiC晶片的切削效率为3.57μm/hr,表面有坑点。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是本发明的原理,在不脱离本发明精神和范围的前提下本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明的范围内。
Claims (6)
1.一种无味氮化铝抛光液,其特征在于,所述氮化铝抛光液由以下质量浓度的原料组成:0.1~40%研磨剂颗粒、0.5~5%醇醚、0.5~20%氧化剂、0.2~5%pH稳定剂,余量为去离子水;且所述氮化铝抛光液pH值为2.5~4.5;所述研磨剂颗粒为氧化硅、氧化铝、氧化铈、氧化锰、氧化镁、氮化铝、碳化硼、钻石中的一种或多种物质;所述醇醚为乙二醇和丙二醇的各种低碳醇醚中的一种或多种物质。
2.如权利要求1所述的无味氮化铝抛光液,其特征在于,所述氧化剂为羟胺、双氧水、过氧醋酸、硫代硫酸及其盐类中的一种或多种物质。
3.如权利要求1所述的无味氮化铝抛光液,其特征在于,所述pH稳定剂为具有缓冲能力的添加剂,使得氮化铝抛光液稳定pH在2.5~4.5。
4.如权利要求1所述的无味氮化铝抛光液,其特征在于,所述pH稳定剂为氨基酸、磺酸胺、磷酸胺、多元酸中的一种或多种物质。
5.一种如权利要求1~4任一项所述无味氮化铝抛光液的制备方法,其特征在于,所述制备方法的步骤为:称取固定含量的研磨剂颗粒,均匀分散在醇醚与去离子水中,搅拌均匀,加入氧化剂,搅拌均匀,采用pH稳定剂,调节pH值为2.5~4.5,得到所述氮化铝抛光液。
6.应用如权利要求1~4任一项所述无味氮化铝抛光液,其特征在于,所述氮化铝抛光液用于氮化铝化合物的表面抛光。
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