CN1146047C - 横向双极型场效应复合晶体管及其制作方法 - Google Patents
横向双极型场效应复合晶体管及其制作方法 Download PDFInfo
- Publication number
- CN1146047C CN1146047C CNB971812209A CN97181220A CN1146047C CN 1146047 C CN1146047 C CN 1146047C CN B971812209 A CNB971812209 A CN B971812209A CN 97181220 A CN97181220 A CN 97181220A CN 1146047 C CN1146047 C CN 1146047C
- Authority
- CN
- China
- Prior art keywords
- base
- region
- element region
- semiconductor device
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 13
- 230000005669 field effect Effects 0.000 title description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000002019 doping agent Substances 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 235000019994 cava Nutrition 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 230000000994 depressogenic effect Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 6
- 230000001419 dependent effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000024241 parasitism Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005571 horizontal transmission Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9604142A SE512661C2 (sv) | 1996-11-13 | 1996-11-13 | Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma |
SE96041421 | 1996-11-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1242874A CN1242874A (zh) | 2000-01-26 |
CN1146047C true CN1146047C (zh) | 2004-04-14 |
Family
ID=20404585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB971812209A Expired - Fee Related CN1146047C (zh) | 1996-11-13 | 1997-11-13 | 横向双极型场效应复合晶体管及其制作方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6015982A (zh) |
EP (1) | EP0946983A1 (zh) |
JP (1) | JP2001504275A (zh) |
KR (1) | KR100526076B1 (zh) |
CN (1) | CN1146047C (zh) |
AU (1) | AU5076298A (zh) |
CA (1) | CA2271313A1 (zh) |
SE (1) | SE512661C2 (zh) |
TW (1) | TW367595B (zh) |
WO (1) | WO1998021753A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003045882A (ja) * | 2001-07-27 | 2003-02-14 | Nec Corp | 半導体装置及びその設計方法 |
JP4591827B2 (ja) * | 2005-05-24 | 2010-12-01 | エルピーダメモリ株式会社 | リセスチャネル構造を有するセルトランジスタを含む半導体装置およびその製造方法 |
US7700977B2 (en) * | 2007-06-21 | 2010-04-20 | Intersil Americas Inc. | Integrated circuit with a subsurface diode |
US20100117153A1 (en) * | 2008-11-07 | 2010-05-13 | Honeywell International Inc. | High voltage soi cmos device and method of manufacture |
CN102403321A (zh) * | 2011-09-30 | 2012-04-04 | 上海新傲科技股份有限公司 | 半导体装置及制备方法 |
US9698594B2 (en) | 2015-11-10 | 2017-07-04 | Analog Devices Global | Overvoltage protection device, and a galvanic isolator in combination with an overvoltage protection device |
GB201604796D0 (en) | 2015-11-10 | 2016-05-04 | Analog Devices Global | A combined isolator and power switch |
US9935628B2 (en) * | 2015-11-10 | 2018-04-03 | Analog Devices Global | FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination |
US9653455B1 (en) * | 2015-11-10 | 2017-05-16 | Analog Devices Global | FET—bipolar transistor combination |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4139781A (en) * | 1974-08-13 | 1979-02-13 | Honeywell Inc. | Logic gate circuits |
CA1131801A (en) * | 1978-01-18 | 1982-09-14 | Johannes A. Appels | Semiconductor device |
US4705759B1 (en) * | 1978-10-13 | 1995-02-14 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
NL186665C (nl) * | 1980-03-10 | 1992-01-16 | Philips Nv | Halfgeleiderinrichting. |
US4982262A (en) * | 1985-01-15 | 1991-01-01 | At&T Bell Laboratories | Inverted groove isolation technique for merging dielectrically isolated semiconductor devices |
US5264719A (en) * | 1986-01-07 | 1993-11-23 | Harris Corporation | High voltage lateral semiconductor device |
US4823173A (en) * | 1986-01-07 | 1989-04-18 | Harris Corporation | High voltage lateral MOS structure with depleted top gate region |
EP0251682A3 (en) * | 1986-06-25 | 1989-12-06 | Hewlett-Packard Company | Integrated bipolar-mos device |
US4857772A (en) * | 1987-04-27 | 1989-08-15 | Fairchild Semiconductor Corporation | BIPMOS decoder circuit |
JPH0812910B2 (ja) * | 1988-09-05 | 1996-02-07 | 日本電気株式会社 | 化合物半導体装置およびその製造方法 |
US5359220A (en) * | 1992-12-22 | 1994-10-25 | Hughes Aircraft Company | Hybrid bipolar/field-effect power transistor in group III-V material system |
SE500814C2 (sv) * | 1993-01-25 | 1994-09-12 | Ericsson Telefon Ab L M | Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning |
-
1996
- 1996-11-13 SE SE9604142A patent/SE512661C2/sv not_active IP Right Cessation
-
1997
- 1997-11-12 US US08/968,213 patent/US6015982A/en not_active Expired - Fee Related
- 1997-11-13 KR KR10-1999-7004140A patent/KR100526076B1/ko not_active IP Right Cessation
- 1997-11-13 JP JP52248298A patent/JP2001504275A/ja not_active Ceased
- 1997-11-13 CN CNB971812209A patent/CN1146047C/zh not_active Expired - Fee Related
- 1997-11-13 WO PCT/SE1997/001908 patent/WO1998021753A1/en active IP Right Grant
- 1997-11-13 CA CA002271313A patent/CA2271313A1/en not_active Abandoned
- 1997-11-13 AU AU50762/98A patent/AU5076298A/en not_active Abandoned
- 1997-11-13 EP EP97913624A patent/EP0946983A1/en not_active Withdrawn
- 1997-11-26 TW TW086117777A patent/TW367595B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2001504275A (ja) | 2001-03-27 |
US6015982A (en) | 2000-01-18 |
TW367595B (en) | 1999-08-21 |
CA2271313A1 (en) | 1998-05-22 |
KR20000053182A (ko) | 2000-08-25 |
AU5076298A (en) | 1998-06-03 |
WO1998021753A1 (en) | 1998-05-22 |
EP0946983A1 (en) | 1999-10-06 |
SE9604142D0 (sv) | 1996-11-13 |
CN1242874A (zh) | 2000-01-26 |
KR100526076B1 (ko) | 2005-11-03 |
SE512661C2 (sv) | 2000-04-17 |
SE9604142L (sv) | 1998-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7445983B2 (en) | Method of manufacturing a semiconductor integrated circuit device | |
JP4874516B2 (ja) | トレンチショットキー整流器が組み込まれたトレンチ二重拡散金属酸化膜半導体トランジスタ | |
JP4761644B2 (ja) | 半導体装置 | |
US5869371A (en) | Structure and process for reducing the on-resistance of mos-gated power devices | |
KR100953333B1 (ko) | 수직형과 수평형 게이트를 갖는 반도체 소자 및 제조 방법 | |
KR19980071863A (ko) | 집적 파워 소자를 가진 집적 광기전 스위치 | |
KR100304716B1 (ko) | 모스컨트롤다이오드및그제조방법 | |
US5940721A (en) | Termination structure for semiconductor devices and process for manufacture thereof | |
CN1146047C (zh) | 横向双极型场效应复合晶体管及其制作方法 | |
CN1539169A (zh) | 对称沟槽mosfet器件及其制造方法 | |
US6653666B2 (en) | J-FET semiconductor configuration | |
JPH0656881B2 (ja) | 半導体装置 | |
US6022790A (en) | Semiconductor process integration of a guard ring structure | |
CN112349781A (zh) | 一种异质集成二极管的SiC MOSFET器件 | |
JPH0654796B2 (ja) | 複合半導体装置 | |
JPH10200104A (ja) | 電圧駆動型半導体装置及びその製造方法 | |
CN210224042U (zh) | 平面结构沟道金氧半场效晶体管 | |
US6180981B1 (en) | Termination structure for semiconductor devices and process for manufacture thereof | |
KR100403053B1 (ko) | 비씨디 소자 및 그 제조 방법 | |
JP3191285B2 (ja) | 半導体装置及びその製造方法 | |
JPH01290265A (ja) | Mos型半導体装置 | |
KR100332115B1 (ko) | 반도체전력소자및그제조방법 | |
JPH0778982A (ja) | 縦型mosfetおよびその製造方法 | |
KR20020093375A (ko) | 전력 반도체 소자 또는 전력 집적회로의 게이트산화막 및그 제조방법 | |
JPH09199718A (ja) | 半導体集積回路装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: ELLISON TELEPHONE CO., LTD. Effective date: 20040827 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20040827 Address after: Munich, Germany Patentee after: Infennian Technologies AG Address before: Stockholm Patentee before: Ericsson Telephone AB |
|
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1024785 Country of ref document: HK |
|
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |