CN114583050B - Stretchable organic electrochemical transistor and preparation method thereof - Google Patents

Stretchable organic electrochemical transistor and preparation method thereof Download PDF

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CN114583050B
CN114583050B CN202210155322.8A CN202210155322A CN114583050B CN 114583050 B CN114583050 B CN 114583050B CN 202210155322 A CN202210155322 A CN 202210155322A CN 114583050 B CN114583050 B CN 114583050B
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drying
electrode
gate electrode
pedot
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CN114583050A (en
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于军胜
彭玉洁
田镇南
高林
邓津易
刘常健
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention discloses a stretchable organic electrochemical transistor and a preparation method thereof, relates to the technical field of flexible organic electrochemical transistors or flexible electronics, and solves the problem that a part of gate voltage cannot be greatly reduced at a channel due to too small gate capacitance in the electrochemical transistor, so that the output current is not ideal, and sequentially comprises a flexible substrate layer, an electrode layer and an ion gel electrolyte layer from bottom to top; a semiconductor active layer and a PEDOT (poly-si-poly-si) grid electrode modification layer which are mutually independent and positioned on the same horizontal line are arranged between the electrode layer and the ionic gel electrolyte layer; the PEDOT is simply dripped on the PSS gate electrode modification layer between the gate electrode and the ion gel electrolyte layer, so that the interface contact between the ion gel electrolyte layer and the gate electrode is effectively improved, the effective control of the input gate voltage on ions in the electrolyte is realized, the ion implantation of the electrolyte into a channel is facilitated, the ion-electron capacitive coupling in the channel is enhanced, and the power consumption loss of the device is reduced.

Description

Stretchable organic electrochemical transistor and preparation method thereof
Technical Field
The invention relates to the field of flexible organic electrochemical transistors or flexible electronics, in particular to a stretchable organic electrochemical transistor and a preparation method thereof.
Background
Organic electrochemical transistors were invented by Wright et al in the 80 s of the 20 th century. The organic electrochemical transistor effectively controls the electrochemical doping of the semiconductor by the injection of electrolyte ions into the semiconductor channel by means of a gate Voltage (VG) to regulate the conductivity. The source drain current (ID) is proportional to the number of holes or electrons moving in the channel, and may represent the doping state of the organic semiconductor film. Similar to conventional mosfet and organic thin film fet, the organic electrochemical transistor controls the current ID (output) through the gate voltage VG (input), so that the organic electrochemical transistor can be a switching device. However, the coupling between ionic and electronic charges throughout the channel volume of the organic electrochemical transistor device provides a high transconductance for the organic electrochemical transistor compared to a field effect transistor, and the input signal can be amplified en route to the output without introducing additional circuitry that may generate noise, thereby achieving accurate signal amplification. Thus, an organic electro-chemical transistor can also be considered as an amplifier. The controllable organic material is synthesized, easy to deposit and biocompatible, so that the organic electrochemical transistor is especially suitable for biological interfaces, printed logic circuits and nerve morphology devices.
A common physical model in exploring the principles of an electromechanical chemical transistor is the Bernards model. The model equates an organic electrochemical transistor device to two circuits: ion circuits and electronic circuits. The ion circuit is formed by a resistor for describing ion flow in electrolyte ions and a capacitor for respectively describing ion storage in a grid-electrolyte interface and a channel volume in series along the grid-electrolyte-channel direction. The proportional magnitude of the gate voltage drop applied across the channel is controlled by the nature and geometry of the gate electrode.
If a polarizable electrode (e.g., au) is used as the gate electrode, the capacitance of the gate electrode must be more than ten times greater than the channel capacitance to achieve efficient gate control, otherwise a significant portion of the applied gate voltage will drop at the gate-electrolyte interface. Alternatively, a non-polarized gate electrode, such as Ag/AgCl, may be used with negligible voltage drop at the gate-electrolyte interface.
Disclosure of Invention
The invention aims at: how to provide a stretchable organic electrochemical transistor based on PEDOT: PSS gate electrode modification layer and a preparation method thereof, and aims to solve the problem that the output current is not ideal because a part of gate voltage cannot be reduced at a channel due to too small gate capacitance in the electrochemical transistor. Meanwhile, the impedance of the interface between the electrode and the electrolyte is reduced by using PEDOT and PSS, which is favorable for regulating and controlling the device by the grid voltage, amplifying the input signal and improving the overall performance of the device.
The technical scheme adopted by the invention is as follows:
a stretchable electromechanical chemistry transistor comprises a flexible substrate layer, an electrode layer and an ionic gel electrolyte layer from bottom to top in sequence; a semiconductor active layer and a PEDOT (poly-si-poly-si) grid electrode modification layer which are mutually independent and positioned on the same horizontal line are arranged between the electrode layer and the ionic gel electrolyte layer; the electrodes comprise a source electrode, a drain electrode and a gate electrode;
the semiconductor active layer is prepared by mixing semiconductor material and SEBS in proportion, dissolving in organic solvent chloroform, and spin-coating to form a stretchable semiconductor film; a source electrode and a drain electrode are arranged between the semiconductor active layer and the flexible substrate layer;
and a gate electrode is arranged between the PEDOT PSS gate electrode modification layer and the flexible substrate layer.
As a preferred technical scheme, the material of the flexible substrate layer is one or more of SEBS, PDMS or PU.
As a preferable technical scheme, the electrode layer is made of carbon paste or Au, has ductility and has a film thickness range of 80-150 nm.
As a preferable technical scheme, the PEDOT/PSS gate electrode modification layer is made of PEDOT/PSS (PH 1000), and has ductility, high conductivity and high optical transparency.
As a preferable technical scheme, the material of the semiconductor active layer is prepared by mixing one of P3HT or DPP-DTT and SEBS, and the thickness of the film is 200-300 nm.
The ionic gel electrolyte layer is prepared by mixing a polymer and an ionic liquid, wherein the polymer is one or more of PS-PMMA-PS, PS-PEO-PS, P (VDF-TrFE), P (VDF-HFP) or P (VDF-TrFE-CTFE), and the ionic liquid is [ EMIM ] [ TFSI ], [ EMIM ] [ FSI ], [ EMIM ] [ DCA ], [ BMIM ] [ PF6] or [ EMIM ] [ BF4 ].
A method for preparing a stretchable electromechanical chemical transistor, comprising the following steps:
step 1: cleaning the transparent glass substrate, and drying the transparent glass substrate by using nitrogen or oven drying the transparent glass substrate for more than 6 hours;
step 2: pouring SEBS, PDMS or PU on a glass substrate coated with a detergent, spreading the solution, placing the solution in a vacuum drying oven for drying, and stripping the flexible substrate from the glass substrate by a blade after drying;
step 3: spraying an electrode (80-150 nm) of the carbon slurry on the PU substrate;
step 4: dropping PEDOT (polyether-ether-ketone) PSS electrode modification layer on the carbon slurry gate electrode;
step 5: cleaning a microscope slide glass, and drying the microscope slide glass by using nitrogen or oven drying the microscope slide glass for more than 6 hours after cleaning;
step 6: spin-coating the prepared PVA solution on a microscope slide, and drying the spin-coated substrate to obtain a PVA sacrificial layer;
step 7: spin-coating the prepared P3HT mixed solution or DPP-DTT mixed solution on the PVA sacrificial layer;
step 8: placing a substrate in a culture dish filled with deionized water at 60 ℃ to dissolve a PVA sacrificial layer in the deionized water to obtain a semiconductor active layer, transferring one layer of semiconductor active layer onto a flexible substrate, and drying by nitrogen;
step 9: and (3) dripping ion gel electrolyte on the semiconductor channel.
As a preferable technical scheme, in the step 2, the drying temperature is 30 ℃ and the time range is 12 hours.
As a preferable technical scheme, in the step 4, the temperature of drying is 30 ℃ and the time range is 30min.
In the step 6, the temperature of the drying is 110 ℃ and the time range is 2min.
As a preferable technical scheme, the drying mode adopts one or more of hot table heating, oven heating, far infrared heating and hot air heating.
The beneficial effects of the invention are as follows:
1. the PEDOT is simply dripped on the PSS gate electrode modification layer between the gate electrode and the ion gel electrolyte layer, so that the interface contact between the ion gel electrolyte layer and the gate electrode is effectively improved, the effective control of the input gate voltage on ions in the electrolyte is realized, the ion implantation of the electrolyte into a channel is facilitated, the ion-electron capacitive coupling in the channel is enhanced, the low-voltage operation of the electrochemical transistor device is realized, and the power consumption loss of the device is reduced.
2. The PEDOT is simply dripped on the PSS gate electrode modification layer between the gate electrode and the ion gel electrolyte layer, so that the capacitance of the gate electrode can be effectively increased, the gate voltage is reduced more at a channel with smaller capacitance, larger signal output is realized, and larger gain can be realized without adding an amplifying circuit which can introduce noise.
3. The interface stress mismatch between the gate electrode and the electrolyte material is reduced by simply dropping a PEDOT: PSS gate electrode modification layer between the gate electrode and the ion gel electrolyte, utilizing the good stability and mechanical flexibility of the PEDOT: PSS polymer. Meanwhile, a platform is provided for large-scale integration together with the ionic gel electrolyte, the semiconductor channel with stretchability and the stretchable electrode;
4. through adding the PEDOT-PSS electrode modification layer between the gate electrode and the ion gel electrolyte layer, the gate capacitance can be increased while good contact between the ion gel electrolyte layer and the gate electrode is ensured, so that the gate voltage acts on the semiconductor channel more, ion implantation into the semiconductor channel in the electrolyte is facilitated, the coupling of an ion-electron conductor is enhanced, and the high gain of the device is realized. The stretchable organic electrochemical transistor with PEDOT-PSS gate electrode modification has certain stretchability while improving the device performance, and is suitable for large-scale integration of flexible electrons.
Drawings
For more clearly describing the technical solution of the embodiments of the present invention, the following description will briefly describe the drawings required to be used in the embodiments, and it should be understood that the proportional relationships of the components in the drawings in this specification do not represent the proportional relationships in actual material selection design, but are merely schematic diagrams of structures or positions, where:
FIG. 1 is a schematic diagram of the structure of the present invention;
the reference numerals in the drawings indicate:
1-flexible substrate layer, 2-source electrode, 3-drain electrode, 4-gate electrode, 5-PEDOT: PSS gate electrode modification layer, 6-semiconductor active layer, 7-ion gel electrolyte layer.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the particular embodiments described herein are illustrative only and are not intended to limit the invention, i.e., the embodiments described are merely some, but not all, of the embodiments of the invention.
The present invention will be described in detail with reference to fig. 1.
Example 1 (control):
1. cleaning a transparent glass substrate with the surface roughness less than 1nm, and thermally drying the cleaned transparent glass substrate for more than 6 hours through an incubator;
2. coating a layer of detergent on a glass substrate, pouring PU on the glass substrate coated with the detergent, slightly vibrating, spreading the solution, putting the spread solution in a vacuum drying oven for drying (30 ℃ for 12 hours), and carefully peeling the flexible substrate from the glass substrate by a blade after drying;
3. spraying an electrode (80-150 nm) of the carbon slurry on the PU substrate;
4. cleaning a microscope slide with the surface roughness less than 1nm, and thermally drying the microscope slide for more than 6 hours through an incubator after cleaning;
5. spin-coating the prepared PVA solution on a microscope slide glass (3000 rpm,60 s), and drying the spin-coated slide glass (110 ℃ for 2 min) to obtain a PVA sacrificial layer;
6. spin-coating the formulated P3HT mixed solution (P3 HT: sebs=2:1) to PVA sacrificial layer (5000 rpm,10 s);
7. placing the spin-coated glass slide in a culture dish filled with deionized water, placing the culture dish on a hot table (60 ℃), dissolving the PVA sacrificial layer in the deionized water to obtain a semiconductor active layer, transferring one layer of semiconductor active layer onto a flexible substrate, and drying by using nitrogen;
8. dripping PS-PEO-PS [ EMIM ] [ TFSI ] ion gel above the semiconductor channel, and drying in a vacuum drying oven at 40 ℃;
9. under the test conditions: when the drain Voltage (VD) = -0.5V and the gate Voltage (VG) scan interval is 1V to-1.5V, that is, vg=1v, ions injected into the semiconductor layer of the device can be released from the semiconductor and returned to the electrolyte, and the switching ratio (Ion/Ioff) =8.6x103, the on current (Ion) =108 μa, and the transconductance (gm) =0.47 mS are measured.
10. The device transconductance (gm) =0.40 mS was measured after stretching the device 120%300 times, leaving 85.11% transconductance.
Example 2:
1. cleaning a transparent glass substrate with the surface roughness less than 1nm, and thermally drying the cleaned transparent glass substrate for more than 6 hours through an incubator;
2. coating a layer of detergent on a glass substrate, pouring PU on the glass substrate coated with the detergent, slightly vibrating, spreading the solution, putting the spread solution in a vacuum drying oven for drying (30 ℃ for 12 hours), and carefully peeling the flexible substrate from the glass substrate by a blade after drying;
3. spraying an electrode (80-150 nm) of the carbon slurry on the PU substrate;
4. a PEDOT/PSS electrode modification layer is dripped on the gate electrode sprayed with the carbon slurry, and the device dripped with the PEDOT/PSS gate electrode modification layer is subjected to drying treatment (30 ℃ for 30 min);
5. cleaning a microscope slide with the surface roughness less than 1nm, and thermally drying the microscope slide for more than 6 hours through an incubator after cleaning;
6. spin-coating the prepared PVA solution on a microscope slide glass (3000 rpm,60 s), and drying the spin-coated slide glass (110 ℃ for 2 min) to obtain a PVA sacrificial layer;
7. spin-coating the formulated P3HT mixed solution (P3 HT: sebs=2:1) to PVA sacrificial layer (5000 rpm,10 s);
8. placing the spin-coated glass slide in a culture dish filled with deionized water, placing the culture dish on a hot table (60 ℃), dissolving the PVA sacrificial layer in the deionized water to obtain a semiconductor active layer, transferring one layer of semiconductor active layer onto a flexible substrate, and drying by using nitrogen;
9. dripping PS-PEO-PS [ EMIM ] [ TFSI ] ion gel above the semiconductor channel, and drying in a vacuum drying oven at 40 ℃;
10. under the test conditions: when the drain Voltage (VD) = -0.5V and the gate Voltage (VG) scan interval is 0.2V to-0.8V, that is, vg=0.2V, ions injected into the semiconductor layer of the device can be released from the semiconductor and return to the electrolyte, and the switching ratio (Ion/Ioff) =4.9×104, the on current (Ion) =381 μa, and the transconductance (gm) =0.59 mS are measured.
11. The device transconductance (gm) =0.51 mS was measured after stretching the device 120%300 times, leaving 88.44% transconductance.
Example 3:
1. cleaning a transparent glass substrate with the surface roughness less than 1nm, and thermally drying the cleaned transparent glass substrate for more than 6 hours through an incubator;
2. coating a layer of detergent on a glass substrate, pouring PU on the glass substrate coated with the detergent, slightly vibrating, spreading the solution, putting the spread solution in a vacuum drying oven for drying (30 ℃ for 12 hours), and carefully peeling the flexible substrate from the glass substrate by a blade after drying;
3. spraying an electrode (80-150 nm) of the carbon slurry on the PU substrate;
4. a layer of PEDOT (polyether-ether-ketone) PSS electrode modification layer is dripped on the gate electrode sprayed with the carbon slurry, and the device dripped with the PEDOT (PSS electrode modification layer) is subjected to drying treatment (30 ℃ for 30 min), and the step 4 is repeated for one time;
5. cleaning a microscope slide with the surface roughness less than 1nm, and thermally drying the microscope slide for more than 6 hours through an incubator after cleaning;
6. spin-coating the prepared PVA solution on a microscope slide glass (3000 rpm,60 s), and drying the spin-coated slide glass (110 ℃ for 2 min) to obtain a PVA sacrificial layer;
7. spin-coating the formulated P3HT mixed solution (P3 HT: sebs=2:1) to PVA sacrificial layer (5000 rpm,10 s);
8. placing the spin-coated glass slide in a culture dish filled with deionized water, placing the culture dish on a hot table (60 ℃), dissolving the PVA sacrificial layer in the deionized water to obtain a semiconductor active layer, transferring one layer of semiconductor active layer onto a flexible substrate, and drying by using nitrogen;
9. dripping PS-PEO-PS [ EMIM ] [ TFSI ] ion gel above the semiconductor channel, and drying in a vacuum drying oven at 40 ℃;
10. under the test conditions: when the drain Voltage (VD) = -0.5V and the gate Voltage (VG) scan interval is 0.15V to-0.8V, that is, vg=0.15V, ions injected into the semiconductor layer of the device can be released from the semiconductor and return to the electrolyte, and the switching ratio (Ion/Ioff) =5.2×104, the on current (Ion) =453 μa, and the transconductance (gm) =0.69 mS are measured.
11. The device transconductance (gm) =0.59 mS was measured after stretching the device 120%300 times, leaving 85.51% transconductance.
Example 4:
1. cleaning a transparent glass substrate with the surface roughness less than 1nm, and thermally drying the cleaned transparent glass substrate for more than 6 hours through an incubator;
2. coating a layer of detergent on a glass substrate, pouring PU on the glass substrate coated with the detergent, slightly vibrating, spreading the solution, putting the spread solution in a vacuum drying oven for drying (30 ℃ for 12 hours), and carefully peeling the flexible substrate from the glass substrate by a blade after drying;
3. spraying an electrode (80-150 nm) of the carbon slurry on the PU substrate;
4. a layer of PEDOT (polyether-ether-ketone) PSS electrode modification layer is dripped on the gate electrode sprayed with the carbon slurry, and the device dripped with the PEDOT (PSS electrode modification layer) is subjected to drying treatment (30 ℃ for 30 min), and the step 4 is repeated twice;
5. cleaning a microscope slide with the surface roughness less than 1nm, and thermally drying the microscope slide for more than 6 hours through an incubator after cleaning;
6. spin-coating the prepared PVA solution on a microscope slide glass (3000 rpm,60 s), and drying the spin-coated slide glass (110 ℃ for 2 min) to obtain a PVA sacrificial layer;
7. spin-coating the formulated P3HT mixed solution (P3 HT: sebs=2:1) to PVA sacrificial layer (5000 rpm,10 s);
8. placing the spin-coated glass slide in a culture dish filled with deionized water, placing the culture dish on a hot table (60 ℃), dissolving the PVA sacrificial layer in the deionized water to obtain a semiconductor active layer, transferring one layer of semiconductor active layer onto a flexible substrate, and drying by using nitrogen;
9. dripping PS-PEO-PS [ EMIM ] [ TFSI ] ion gel above the semiconductor channel, and drying in a vacuum drying oven at 40 ℃;
10. under the test conditions: when the drain Voltage (VD) = -0.5V and the gate Voltage (VG) scan interval is 0.1V to-0.7V, that is, vg=0.1V, ions injected into the semiconductor layer by the device can be released from the semiconductor and return to the electrolyte, when vg= -0.7V, the output leakage current (ID) of the device is close to saturation, and the switching ratio (Ion/Ioff) =1.2×105, the on current (Ion) =501 μa, and the transconductance (gm) =0.73 mS are measured.
11. The device transconductance (gm) =0.64 mS was measured after stretching the device 120%300 times, leaving 87.67% transconductance.
It can be seen from examples 1 to 4 that: according to a structure of a stretchable electromechanical chemistry transistor, the structure comprises a flexible substrate layer 1, an electrode layer and an ion gel electrolyte layer 7 from bottom to top in sequence; a semiconductor active layer 6 and a PEDOT which are mutually independent and positioned on the same horizontal line are arranged between the electrode layer and the ionic gel electrolyte layer 7, namely a PSS gate electrode modification layer 5; the electrodes comprise a source electrode 2, a drain electrode 3 and a gate electrode 4; the semiconductor active layer 6 is prepared by mixing semiconductor material and SEBS in proportion, dissolving in organic solvent chloroform, and spin-coating to form a stretchable semiconductor film; a source electrode 2 and a drain electrode 3 are arranged between the semiconductor active layer 6 and the flexible substrate layer 1; and a gate electrode 4 is arranged between the PEDOT PSS gate electrode modification layer 5 and the flexible substrate layer 1.
The organic electrochemical transistor prepared by the preparation method of the stretchable organic electrochemical transistor device with the PEDOT: PSS gate electrode modification layer (namely, the organic electrochemical transistor prepared by examples 2-4) has the advantages that compared with an electrochemical transistor prepared without treatment (namely, the organic electrochemical transistor prepared by example 1), the transconductance gm is improved, the gate control voltage required by ion implantation and release in the electrolyte is reduced, better amplification of an input signal can be realized, and the mechanical flexibility and long-term stability of the whole device are enhanced. The PEDOT-PSS grid modification layer is dripped on the grid electrode and the ion gel electrolyte layer, so that the interface contact between the ion gel electrolyte layer and the grid electrode is improved, the grid capacitance is increased, the rapid injection of electrolyte ions is realized under the modulation of grid voltage, and the efficient coupling of mixed ion-electrons in a semiconductor is promoted. Meanwhile, the grid voltage acts on the semiconductor channel, so that larger signal output is realized, and larger gain can be realized without adding an amplifying circuit which can introduce noise. The PEDOT-PSS polymer has good stability and mechanical flexibility, reduces the interface stress mismatch between the gate electrode and the electrolyte material, and is favorable for large-scale expansion, integration and miniaturization of the transistor.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.

Claims (10)

1. A stretchable electromechanical chemistry transistor, characterized by comprising, in order from bottom to top, a flexible substrate layer (1), an electrode layer and an ionic gel electrolyte layer (7); a semiconductor active layer (6) and a PEDOT: PSS gate electrode modification layer (5) which are mutually independent and positioned on the same horizontal line are arranged between the electrode layer and the ionic gel electrolyte layer (7); the electrodes comprise a source electrode (2), a drain electrode (3) and a gate electrode (4);
the semiconductor active layer (6) is prepared by mixing semiconductor material and SEBS in proportion, dissolving in organic solvent chloroform, and spin-coating to form a stretchable semiconductor film; a source electrode (2) and a drain electrode (3) are arranged between the semiconductor active layer (6) and the flexible substrate layer (1);
the PEDOT is characterized in that a gate electrode (4) is arranged between the PSS gate electrode modification layer (5) and the flexible substrate layer (1);
specifically, the manufacturing process of the transistor comprises the following steps:
dropping PEDOT (polyether-ether-ketone) PSS electrode modification layer on the carbon slurry gate electrode; and (3) dripping ion gel electrolyte on the semiconductor channel.
2. A stretchable electro-mechanical chemiresistor according to claim 1, characterized in that the material of the flexible substrate layer (1) is one or more of SEBS, PDMS or PU.
3. The stretchable electromechanical chemistry transistor of claim 1, wherein the electrode layer is made of carbon paste or Au, has ductility, and has a film thickness ranging from 80 nm to 150nm.
4. A stretchable electro-mechanical-chemical transistor according to claim 1, characterized in that the material of the PEDOT: PSS gate electrode modification layer (5) is PEDOT: PSS (PH 1000), having ductility, high conductivity and high optical transparency.
5. The stretchable electro-mechanical-chemical transistor according to claim 1, wherein the semiconductor active layer (6) is made of a mixture of one of P3HT and DPP-DTT and SEBS, and the film thickness is 200-300 nm.
6. The stretchable electro-mechanical-chemical transistor according to claim 1, wherein the ionic gel electrolyte layer is made of a polymer and an ionic liquid, the polymer is one or more of PS-PMMA-PS, PS-PEO-PS, P (VDF-TrFE), P (VDF-HFP) or P (VDF-TrFE-CTFE), and the ionic liquid is [ EMIM ] [ TFSI ], [ EMIM ] [ FSI ], [ EMIM ] [ DCA ], [ BMIM ] [ PF6] or [ EMIM ] [ BF4 ].
7. A stretchable electro-mechanical-chemical transistor according to claim 1, characterized in that the transistor is prepared by the steps of:
step 1: cleaning the transparent glass substrate, and drying the transparent glass substrate by using nitrogen or oven drying the transparent glass substrate for more than 6 hours;
step 2: pouring SEBS, PDMS or PU on a glass substrate coated with a detergent, spreading the solution, placing the solution in a vacuum drying oven for drying, and stripping the flexible substrate from the glass substrate by a blade after drying;
step 3: spraying an electrode (80-150 nm) of the carbon paste on the PU substrate;
step 4: dropping PEDOT (polyether-ether-ketone) PSS electrode modification layer on the carbon slurry gate electrode;
step 5: cleaning a microscope slide glass, and drying the microscope slide glass by using nitrogen or oven drying the microscope slide glass for more than 6 hours after cleaning;
step 6: spin-coating the prepared PVA solution on a microscope slide, and drying the spin-coated substrate to obtain a PVA sacrificial layer;
step 7: spin-coating the prepared P3HT mixed solution or DPP-DTT mixed solution on the PVA sacrificial layer;
step 8: placing a substrate in a culture dish filled with deionized water at 60 ℃ to dissolve a PVA sacrificial layer in the deionized water to obtain a semiconductor active layer, transferring one layer of semiconductor active layer onto a flexible substrate, and drying by nitrogen;
step 9: and (3) dripping ion gel electrolyte on the semiconductor channel.
8. The stretchable electro-mechanical-chemical transistor according to claim 7, wherein in the step 2, the temperature of the drying is 30 ℃ for 12 hours.
9. The stretchable electro-mechanical-chemical transistor according to claim 7, wherein in the step 4, the temperature of the drying is 30 ℃ and the time range is 30min.
10. The stretchable electro-mechanical-chemical transistor according to claim 7, wherein in the step 6, the temperature of the drying is 110 ℃ for 2min.
CN202210155322.8A 2022-02-18 2022-02-18 Stretchable organic electrochemical transistor and preparation method thereof Active CN114583050B (en)

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