CN111490161A - Organic thin field effect transistor and preparation method thereof - Google Patents

Organic thin field effect transistor and preparation method thereof Download PDF

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Publication number
CN111490161A
CN111490161A CN202010336223.0A CN202010336223A CN111490161A CN 111490161 A CN111490161 A CN 111490161A CN 202010336223 A CN202010336223 A CN 202010336223A CN 111490161 A CN111490161 A CN 111490161A
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gate
organic semiconductor
field effect
layer
effect transistor
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于军胜
范惠东
吴梦鸽
刘康宁
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Abstract

The invention discloses an organic field effect transistor and a preparation method thereof, wherein the transistor is of a bottom-gate top contact type or a bottom-gate bottom contact type and comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, wherein an ultrathin astaxanthin compound modification layer is arranged between the organic semiconductor layer and the source electrode as well as between the organic semiconductor layer and the drain electrode. According to the invention, the ultra-thin astaxanthin composite modification layer is added between the organic semiconductor layer and the source electrode and the drain electrode, and through utilizing the extremely strong oxidation resistance of the astaxanthin, unpaired electrons of free radicals are attracted or electrons are provided for the free radicals, so that the free radicals are removed to play an antioxidation role, the defect state density of an interface is reduced, the electrical property of a semiconductor device prepared in the air is obviously improved, and the air stability of the organic field effect transistor is improved.

Description

Organic thin field effect transistor and preparation method thereof
Technical Field
The invention belongs to the technical field of electronic components, and particularly relates to an organic field effect transistor and a preparation method thereof.
Background
As an important component of large-scale integrated circuits, field effect transistors have been the mainstream research direction in the field of optoelectronics and electronics since the world, and field effect transistors are currently mainly classified into two categories, organic field effect transistors and inorganic field effect transistors, and compared with inorganic field effect transistors, organic field effect transistors mainly have the following advantages: the film forming technology is various, the material is easy to design, the roll-to-roll process preparation can be carried out, large-area flexible processing can be carried out, and the like.
At present, the solution method for preparing the organic field effect transistor is mainly in a glove box for isolating air, and mainly because oxygen molecules in the air are easy to attach to an interface and are used as a defect state trap, the transmission of charges is greatly limited, the interface potential epitaxy is increased, the device performance of the transistor is reduced, and particularly the n-type field effect transistor device taking electrons as a main carrier. Meanwhile, water and oxygen in the air have great erosion effect on the unpackaged device, and the service life of the device can be obviously shortened.
Disclosure of Invention
The invention aims to: the invention provides an organic field effect transistor and a preparation method thereof, which attract unpaired electrons of free radicals or provide electrons for the free radicals by utilizing the strong oxidation resistance of astaxanthin, thereby removing the free radicals to play an oxidation resistance role, reducing the defect state density of an interface, obviously improving the electrical property of a semiconductor device prepared in the air, and simultaneously improving the air stability of the organic field effect transistor.
The technical scheme adopted by the invention is as follows:
the organic thin field effect transistor is of a bottom-gate top contact type or a bottom-gate bottom contact type and comprises a substrate, a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode, wherein an ultrathin astaxanthin composite modification layer is arranged between the organic semiconductor layer and the source electrode and between the organic semiconductor layer and the drain electrode.
According to the invention, the ultra-thin astaxanthin composite modification layer is added between the organic semiconductor layer and the source electrode and the drain electrode, and through utilizing the extremely strong oxidation resistance of the astaxanthin, unpaired electrons of free radicals are attracted or electrons are provided for the free radicals, so that the free radicals are removed to play an anti-oxidation role, the defect state density of an interface is reduced, the method enables the electrical property of a semiconductor device prepared in the air to be obviously improved, and the air stability of the organic field effect transistor is improved.
Preferably, the ultra-thin astaxanthin composite modification layer is prepared by mixing 70-90% by mass of astaxanthin and 10-30% by mass of shellac.
Preferably, the thickness of the ultra-thin astaxanthin composite modification layer is 1-5 nm.
Preferably, the gate insulating layer is made of an organic polymer insulating material or an inorganic insulating material; the organic polymer insulation material includes one or more of Polystyrene (PS), Polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), polyvinylidene fluoride (PVDF), Polyimide (PI), and the inorganic insulation material includes silicon dioxide (SiO)2) Aluminum oxide (Al)2O3) Titanium oxide (Ti)2O3) One or more of (a); the thickness of the gate insulation layer is 100-600 nm.
Preferably, the organic semiconductor material comprises one or more soluble organic semiconductor materials of poly-3-hexylthiophene (P3HT), Tips-pentacene (Tips-pentacene) and PTCDI-e, and the thickness is 30-300 nm.
Preferably, the gate electrode, the source electrode and the drain electrode are all metal or conductive films; the thickness of the source electrode and the thickness of the drain electrode are both 10-300 nm, the metal comprises one or more of gold, silver and copper, and the conductive film comprises indium tin oxide or zinc oxide.
A method for preparing an organic thin field effect transistor comprises the following steps:
s1, thoroughly cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying after cleaning; preparing a gate electrode on the surface of the substrate to form a pattern of the gate electrode;
s2, preparing a gate insulating layer on the substrate plated with the gate electrode;
s3, preparing an organic semiconductor layer on the substrate covered with the grid insulation layer, and carrying out thermal annealing at 70 ℃ for 20 minutes;
s4, preparing an ultrathin astaxanthin composite modification layer on the organic semiconductor layer;
s5, preparing a source motor and a drain electrode.
Preferably, the gate electrode, the source electrode and the drain electrode are prepared by any one of vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, screen printing, printing or spin coating.
Preferably, in step S3, the gate insulating layer is prepared by any one of plasma enhanced chemical vapor deposition, thermal oxidation, spin coating, and vacuum evaporation.
Preferably, in step S4, the organic semiconductor layer is prepared by any one of plasma enhanced chemical vapor deposition, thermal oxidation, spin coating, vacuum evaporation, roll coating, film dropping, stamping, printing and air spraying.
Compared with the prior art, the invention has the beneficial effects that:
(1) an ultra-thin astaxanthin compound modification layer is introduced between the organic semiconductor layer and the source-drain electrode, the ultra-thin astaxanthin compound modification layer is composed of astaxanthin and shellac, and by utilizing the extremely strong oxidation resistance of the astaxanthin, unpaired electrons of free radicals are attracted or electrons are provided for the free radicals, so that the free radicals are removed to play an oxidation resistance role, the defect state density of an interface is reduced, the interface potential epitaxy is reduced, and the electrical characteristics of the device are improved;
(2) the astaxanthin and the shellac in the ultrathin astaxanthin composite modification layer can effectively resist the erosion of water and oxygen in the air, and the air life of the device is obviously prolonged;
(3) the ultrathin astaxanthin composite layer is only 1-5nm thick, so that charges can completely penetrate through the ultrathin layer through a quantum tunneling effect, and the effect of blocking the charges cannot be achieved.
Drawings
Fig. 1 shows an organic field effect transistor structure according to the present invention.
Labeled as: 1-substrate, 2-gate electrode, 3-gate insulating layer, 4-organic semiconductor layer, 5-ultra-thin astaxanthin composite layer, 6-source electrode and 7-drain electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1
As shown in fig. 1, the organic thin field effect transistor is a bottom-gate top-contact type or bottom-gate bottom-contact type, and comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, wherein an ultra-thin astaxanthin compound modification layer is arranged between the organic semiconductor layer and the source electrode as well as between the organic semiconductor layer and the drain electrode.
The preparation method comprises the following steps:
s1, thoroughly cleaning the substrate with silicon as the gate electrode, and drying the substrate with dry nitrogen after cleaning;
s2, preparing a gate electrode on the surface of the substrate to form a pattern of the gate electrode;
s3 thermal oxidation or vapor deposition method is adopted to generate a layer of 100nm SiO2As a gate insulating layer;
s4, spin-coating TIPS-pentacene on the gate insulating layer, wherein the thickness of the organic semiconductor layer is 25 nm;
s5, spin-coating an ultra-thin astaxanthin composite modification layer (the mass fraction of astaxanthin is 70%, the shellac is 30%) with the thickness of 1nm on the organic semiconductor layer;
and S6, preparing the gold source electrode and the gold drain electrode by vacuum evaporation to 60 nm.
The device is tested, and the saturation current ISD of the device is 5 muA, and the carrier mobility mu is 0.05 × 10- 3cm2Vs, threshold voltage VTH＝-6V。
Example 2
As shown in fig. 1, the organic thin field effect transistor is a bottom-gate top-contact type or bottom-gate bottom-contact type, and comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, wherein an ultra-thin astaxanthin compound modification layer is arranged between the organic semiconductor layer and the source electrode as well as between the organic semiconductor layer and the drain electrode.
The preparation method comprises the following steps:
s1, thoroughly cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying after cleaning;
s2, thoroughly cleaning the glass substrate 1 sputtered with the gate electrode ITO, and drying the glass substrate with dry nitrogen after cleaning;
s3, preparing a PVA film on the ITO by adopting a spin-coating method to form a grid insulation layer of 20 nm;
s4, spin-coating TIPS-pentacene on the gate insulating layer, wherein the thickness of the organic semiconductor layer is 25 nm;
s5, spin-coating an ultra-thin astaxanthin composite modification layer (the mass fraction of astaxanthin is 70%, the shellac is 30%) with the thickness of 2nm on the organic semiconductor layer;
and S6, preparing the gold source electrode and the gold drain electrode by vacuum evaporation to 60 nm.
Testing the device to obtain saturation current I of the deviceSD15 μ a, carrier mobility μ 0.15 × 10- 3cm2Vs, threshold voltage VTH＝-7V。
Example 3
As shown in fig. 1, the organic thin field effect transistor is a bottom-gate top-contact type or bottom-gate bottom-contact type, and comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, wherein an ultra-thin astaxanthin compound modification layer is arranged between the organic semiconductor layer and the source electrode as well as between the organic semiconductor layer and the drain electrode.
The preparation method comprises the following steps:
s1, thoroughly cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying after cleaning;
s2, thoroughly cleaning the glass substrate 1 sputtered with the gate electrode ITO, and drying the glass substrate with dry nitrogen after cleaning;
s3, preparing a PVA film on the ITO by adopting a spin-coating method to form a grid insulation layer of 20 nm;
s4, spin-coating TIPS-pentacene on the gate insulating layer, wherein the thickness of the organic semiconductor layer is 25 nm;
s5, spin-coating an ultra-thin astaxanthin composite modification layer (the mass fraction of astaxanthin is 70%, the shellac is 30%) with the thickness of 2nm on the organic semiconductor layer;
and S6, preparing the gold source electrode and the gold drain electrode by vacuum evaporation to 60 nm.
Testing the device to obtain saturation current I of the deviceSD18 μ a, carrier mobility μ 0.19 × 10- 3cm2Vs, threshold voltage VTH＝-3V。
Example 4
As shown in fig. 1, the organic thin field effect transistor is a bottom-gate top-contact type or bottom-gate bottom-contact type, and comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, wherein an ultra-thin astaxanthin compound modification layer is arranged between the organic semiconductor layer and the source electrode as well as between the organic semiconductor layer and the drain electrode.
The preparation method comprises the following steps:
s1, thoroughly cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying after cleaning;
s2, thoroughly cleaning the glass substrate 1 sputtered with the gate electrode ITO, and drying the glass substrate with dry nitrogen after cleaning;
s3, preparing a PMMA film on the ITO by adopting a spin coating method to form a grid insulation layer of 600 nm;
s4, spin-coating TIPS-pentacene on the gate insulating layer, wherein the thickness of the organic semiconductor layer is 300 nm;
s5, spin-coating an ultra-thin astaxanthin composite modification layer (the mass fraction of astaxanthin is 70%, the shellac is 30%) with the thickness of 5nm on the organic semiconductor layer;
and S6, preparing the gold source electrode and the gold drain electrode by vacuum evaporation to 60 nm.
Testing the device to obtain saturation current I of the deviceSD12 μ a, carrier mobility μ 0.11 × 10- 3cm2Vs, threshold voltage VTH＝-6V。
Example 5
As shown in fig. 1, the organic thin field effect transistor is a bottom-gate top-contact type or bottom-gate bottom-contact type, and comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, wherein an ultra-thin astaxanthin compound modification layer is arranged between the organic semiconductor layer and the source electrode as well as between the organic semiconductor layer and the drain electrode.
The preparation method comprises the following steps:
s1, thoroughly cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying after cleaning;
s2, thoroughly cleaning the glass substrate 1 sputtered with the gate electrode ITO, and drying the glass substrate with dry nitrogen after cleaning;
s3, preparing a PMMA film on the ITO by adopting a spin coating method to form a grid insulation layer of 100 nm;
s4, spin-coating TIPS-pentacene on the gate insulating layer, wherein the thickness of the organic semiconductor layer is 25 nm;
s5, spin-coating an ultra-thin astaxanthin composite modification layer (the mass fraction of astaxanthin is 70%, the shellac is 30%) with the thickness of 2nm on the organic semiconductor layer;
and S6, preparing the gold source electrode and the gold drain electrode by vacuum evaporation to 60 nm.
Testing the device to obtain saturation current I of the deviceSD15 μ a, carrier mobility μ 0.17 × 10- 3cm2Vs, threshold voltage VTH＝-6V。
Example 6
As shown in fig. 1, the organic thin field effect transistor is a bottom-gate top-contact type or bottom-gate bottom-contact type, and comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, wherein an ultra-thin astaxanthin compound modification layer is arranged between the organic semiconductor layer and the source electrode as well as between the organic semiconductor layer and the drain electrode.
The preparation method comprises the following steps:
s1, thoroughly cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying after cleaning;
s2, thoroughly cleaning the glass substrate 1 sputtered with the gate electrode ITO, and drying the glass substrate with dry nitrogen after cleaning;
s3, preparing a PVA film on the ITO by adopting a spin-coating method to form a grid insulation layer of 600 nm;
s4, spin-coating PTCDI-e on the gate insulating layer, wherein the thickness of the organic semiconductor layer is 100 nm;
s5, spin-coating an ultra-thin astaxanthin composite modification layer (the mass fraction of astaxanthin is 70%, the shellac is 30%) with the thickness of 1nm on the organic semiconductor layer;
and S6, preparing the gold source electrode and the gold drain electrode by vacuum evaporation to 60 nm.
Testing the device to obtain saturation current I of the deviceSDCarrier mobility, μ 0.25 × 10, 32 μ a- 3cm2Vs, threshold voltage VTH＝-4V。
Example 7
As shown in fig. 1, the organic thin field effect transistor is a bottom-gate top-contact type or bottom-gate bottom-contact type, and comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, wherein an ultra-thin astaxanthin compound modification layer is arranged between the organic semiconductor layer and the source electrode as well as between the organic semiconductor layer and the drain electrode.
The preparation method comprises the following steps:
s1, thoroughly cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying after cleaning;
s2, thoroughly cleaning the glass substrate 1 sputtered with the gate electrode ITO, and drying the glass substrate with dry nitrogen after cleaning;
s3, preparing a PVA film on the ITO by adopting a spin-coating method to form a grid insulation layer of 600 nm;
s4, spin-coating PTCDI-e on the gate insulating layer, wherein the thickness of the organic semiconductor layer is 100 nm;
s5, spin-coating an ultra-thin astaxanthin composite modification layer (the mass fraction of astaxanthin is 70%, the shellac is 30%) with the thickness of 1nm on the organic semiconductor layer;
and S6, preparing the gold source electrode and the gold drain electrode by vacuum evaporation to 60 nm.
Testing the device to obtain saturation current I of the deviceSD18 μ a, carrier mobility μ 0.15 × 10- 3cm2Vs, threshold voltage VTH＝-8V。
Table 1: test data tables of examples 1 to 7
Examples Saturation current (μ A) Carrier mobility 10-3cm2/Vs Threshold voltage (V)
Example 1 5 0.05 -6
Example 2 15 0.15 -7
Example 3 18 0.19 -3
Example 4 12 0.11 -6
Example 5 15 0.17 -6
Example 6 32 0.25 4
Example 7 18 0.15 8
The above-mentioned embodiments only express the specific embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for those skilled in the art, without departing from the technical idea of the present application, several changes and modifications can be made, which are all within the protection scope of the present application.

Claims (10)

1. The organic thin field effect transistor is of a bottom-gate top contact type or a bottom-gate bottom contact type and comprises a substrate, a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode.
2. The organic thin field effect transistor according to claim 1, wherein the ultra-thin astaxanthin composite modification layer is prepared by mixing 70-90% by mass of astaxanthin and 10-30% by mass of shellac.
3. The organic thin field effect transistor according to claim 1, wherein the ultra-thin astaxanthin complex modification layer has a thickness of 1-5 nm.
4. The organic thin field effect transistor according to claim 1, wherein the gate insulating layer is made of an organic polymer insulating material or an inorganic insulating material; the organic polymer insulating material comprises one or more of polystyrene, polymethyl methacrylate, polyvinyl alcohol, polyvinylidene fluoride and polyimide, and the inorganic insulating material comprises one or more of silicon dioxide, aluminum oxide and titanium oxide; the thickness of the gate insulation layer is 100-600 nm.
5. The organic thin field effect transistor according to claim 1, wherein the organic semiconductor material comprises one or more soluble organic semiconductor materials of poly-3-hexylthiophene, Tips-pentacene and PTCDI-e, and has a thickness of 30 to 300 nm.
6. An organic thin field effect transistor according to claim 1, wherein the gate electrode, the source electrode and the drain electrode are all metal or conductive thin films; the thickness of the source electrode and the thickness of the drain electrode are both 10-300 nm, the metal comprises one or more of gold, silver and copper, and the conductive film comprises indium tin oxide or zinc oxide.
7. A method of fabricating an organic thin field effect transistor according to any one of claims 1 to 6, comprising the steps of:
s1, thoroughly cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying after cleaning;
s2, preparing a gate electrode on the surface of the substrate to form a pattern of the gate electrode;
s3, preparing a gate insulating layer on the substrate plated with the gate electrode;
s4, preparing an organic semiconductor layer on the substrate covered with the grid insulation layer, and carrying out thermal annealing at 70 ℃ for 20 minutes;
s5, preparing an ultrathin astaxanthin composite modification layer on the organic semiconductor layer;
s6, preparing a source motor and a drain electrode.
8. The method of claim 7, wherein the gate electrode, the source electrode, and the drain electrode are formed by any one of vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, screen printing, and spin coating.
9. The method of claim 7, wherein in step S3, the gate insulating layer is formed by any one of plasma enhanced chemical vapor deposition, thermal oxidation, spin coating, and vacuum evaporation.
10. The method of claim 7, wherein in step S4, the organic semiconductor layer is formed by any one of plasma enhanced chemical vapor deposition, thermal oxidation, spin coating, vacuum evaporation, roll coating, film dropping, stamping, printing and air spraying.
CN202010336223.0A 2020-04-24 2020-04-24 Organic thin field effect transistor and preparation method thereof Pending CN111490161A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114583050A (en) * 2022-02-18 2022-06-03 电子科技大学 Stretchable organic electrochemical transistor and preparation method thereof
CN114937742A (en) * 2022-01-07 2022-08-23 天津大学 Method for enhancing stability of N-type semiconductor through oxygen elimination

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CN1956225A (en) * 2005-10-28 2007-05-02 三星电子株式会社 Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same
CN104807868A (en) * 2015-04-22 2015-07-29 电子科技大学 Gas sensor based on OEFT (Organic field-effect transistor) and preparation method thereof
CN106299138A (en) * 2016-08-04 2017-01-04 南京工业大学 With the synthesis of phosphate group material and the preparation of self-assembled film on oxide surface thereof
CN108011042A (en) * 2017-06-17 2018-05-08 电子科技大学 Double-deck active layer thin film transistor (TFT) and preparation method

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Publication number Priority date Publication date Assignee Title
JP2005327793A (en) * 2004-05-12 2005-11-24 Matsushita Electric Ind Co Ltd Organic field effect transistor and its fabrication process
CN1956225A (en) * 2005-10-28 2007-05-02 三星电子株式会社 Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same
CN104807868A (en) * 2015-04-22 2015-07-29 电子科技大学 Gas sensor based on OEFT (Organic field-effect transistor) and preparation method thereof
CN106299138A (en) * 2016-08-04 2017-01-04 南京工业大学 With the synthesis of phosphate group material and the preparation of self-assembled film on oxide surface thereof
CN108011042A (en) * 2017-06-17 2018-05-08 电子科技大学 Double-deck active layer thin film transistor (TFT) and preparation method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114937742A (en) * 2022-01-07 2022-08-23 天津大学 Method for enhancing stability of N-type semiconductor through oxygen elimination
CN114937742B (en) * 2022-01-07 2023-01-31 天津大学 Method for enhancing stability of N-type semiconductor through oxygen elimination
CN114583050A (en) * 2022-02-18 2022-06-03 电子科技大学 Stretchable organic electrochemical transistor and preparation method thereof

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