CN102280580A - Organic thin-film transistor and preparation method thereof - Google Patents
Organic thin-film transistor and preparation method thereof Download PDFInfo
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- CN102280580A CN102280580A CN2011101982564A CN201110198256A CN102280580A CN 102280580 A CN102280580 A CN 102280580A CN 2011101982564 A CN2011101982564 A CN 2011101982564A CN 201110198256 A CN201110198256 A CN 201110198256A CN 102280580 A CN102280580 A CN 102280580A
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Abstract
The invention discloses an organic thin-film transistor and a preparation method thereof. The transistor comprises a substrate, a source electrode, a drain electrode, a grid electrode, an insulating layer and an active layer, wherein the active layer comprises a thin-film layer made of an organic semiconductor material; and the source electrode and the drain electrode are both a thin-film layer formed by a mixture of a dopant and the organic semiconductor material. The preparation method comprises the following steps of: depositing a solution of the organic semiconductor material on the substrate to form an organic semiconductor thin film, and then carrying out annealing treatment to prepare the active layer; and then depositing a mixing solution of the dopant and the organic semiconductor material on the active layer arranged on the substrate to form an electrode material layer, and then carrying out annealing treatment to form the source electrode and the drain electrode with set appearances. According to the invention, a contact resistance between the source electrode and the drain electrode in the organic thin-film transistor and the active layer can be effectively reduced, and further the property of the in the organic thin-film transistor is improved.
Description
Technical field
The present invention be more particularly directed to a kind of OTFT and preparation technology thereof.
Background technology
OTFT (Organic Thin Film Transistor, OTFT) but have material source extensively, with plurality of advantages such as flexible substrate compatibility, many, the light-duty low temperature manufacturings of film technique, low cost of manufacture, can be widely used in fields such as complete organic Active Matrix LCD At, memory component, smart card, electronic tag and large tracts of land sensor array.Can predict, OTFT will greatly change at present the single present situation of the electronic information field that is made of the inorganic field effect transistor aspect a lot, therefore more and more get more and more people's extensive concerning.
But,, find that this technology still exists many shortcomings and problem along with going deep into that OTFT is studied.Studies show that the ohmic contact resistance that forms between source/drain electrode is one of principal element that influences the OTFT device performance.To improve transistorized performance greatly if can reduce contact resistance.
Summary of the invention
The object of the present invention is to provide a kind of OTFT and preparation method thereof to reduce contact resistance, improve the performance of this OTFT, thereby overcome the problem of the ohmic contact resistance that forms between the organic active layer and source/drain electrode in the existing OTFT.
For achieving the above object, the present invention has adopted following technical scheme:
A kind of OTFT, comprise substrate, source electrode, drain electrode, gate electrode, insulating barrier, active layer, it is characterized in that: described active layer comprises the thin layer of being made up of organic semiconducting materials, described source electrode and drain electrode all are thin layers that the mixture by dopant and this organic semiconducting materials forms, and wherein the concentration of dopant is 10-50wt%.
Described active layer is made up of the film that organic semiconducting materials forms, and its thickness is 100nm-1um.
The thickness of described source electrode and drain electrode is at 50nm-2um.
Described dopant can be selected from NOPF
6, contain Fe
3+Salt and I
2Deng.
Described substrate can be selected from hard substrate and flexible substrates such as silicon chip, glass.
The preparation method of OTFT is as mentioned above:
After deposition forms organic semiconductor thin-film on the substrate,, make active layer with the solution of organic semiconducting materials again through annealing in process;
Then with the blend solution of dopant and this organic semiconducting materials being located at deposition of electrode material layer on the on-chip active layer, carry out annealing in process again, have source electrode and the drain electrode of setting pattern thereby form.
Described organic semiconducting materials comprises polythiophene, and described dopant can be selected from NOPF
6, contain Fe
3+Salt and I
2
This method specifically comprises the steps:
A. successively substrate is cleaned with organic solvent and water, dry for standby then, described organic solvent is acetone and/or ethanol;
B. get polythiophene solution and evenly be coated on the substrate, make its deposition form the thick homogeneous film of 100nm-1 μ m, carry out annealing in process again, make active layer;
C. the blend solution of getting dopant and polythiophene is coated on the active layer with mode of printing, makes its deposition form electrode material layer, carries out annealing in process again, makes to have source electrode and the drain electrode of setting pattern;
Aforementioned annealing in process is to carry out under temperature is 60-120 ℃ condition, and annealing time is 30-60min.
Be to adopt the mode of spin coating or printing that polythiophene solution is coated on the substrate in this method, and then deposit film forming.
Compared with prior art, advantage of the present invention is at least: the electrode material of employing is the intrinsic body of active layer, therefore can effectively reduce contact resistance, improves the performance of this OTFT.
Description of drawings
Fig. 1 is the structural representation of OTFT among the present invention;
Fig. 2 is the output characteristic curve figure of OTFT among the embodiment 1;
Fig. 3 is the transfer characteristic curve figure of OTFT among the embodiment 1;
The parts of each Reference numeral and indication thereof are respectively among the figure: 1 substrate, 2 grids, 3 insulating barriers, 4 active layers, 5 source electrodes, 6 drain electrodes.
Embodiment
Problem at the ohmic contact resistance that forms between existing organic active layer and the source/drain electrode in the OTFT in the prior art, spy of the present invention has proposed a kind of structure improved OTFT that has, consult Fig. 1, it comprises substrate 1, insulating barrier 3, active layer 4, source electrode 5, drain electrode 6 and gate electrode 2, wherein, active layer comprises the thin layer of being made up of organic semiconducting materials, source electrode and drain electrode all are thin layers that the mixture by dopant and this organic semiconducting materials forms, concentration of dopant 10-50wt% in this mixture.
This OTFT can be by following prepared, that is:
After deposition forms organic semiconductor thin-film on the substrate,, make active layer with the solution of organic semiconducting materials again through annealing in process;
Then with the blend solution of dopant and this organic semiconducting materials being located at deposition of electrode material layer on the on-chip active layer, carry out annealing in process again, have source electrode and the drain electrode of setting pattern thereby form.
Aforementioned active layer preferably is made up of polythiophene, and its thickness is 100nm-1 μ m.
Aforementioned dopant can be selected from NOPF
6, contain Fe
3+Salt and I
2Deng.
Aforementioned source electrode and drain electrode are preferably the thin layer that the blend by this polythiophene that mixes forms, and its thickness is at 50nm-2 μ m.
Aforementioned substrate can be selected hard substrate such as silicon chip, glass for use, and flexible substrates.
Can adopt the mode of spin coating or printing that polythiophene solution is coated on the substrate among the aforementioned preparation technology, and then deposition form film.
The blend solution of this organic semiconducting materials that the mode of preferred employing aerosol spray printing will be mixed among the aforementioned preparation technology is coated on the active layer, makes its deposition form electrode material layer, and then makes source electrode and the drain electrode with setting pattern.
Below in conjunction with some preferred embodiments technical scheme of the present invention is elaborated.
(1) silicon chip that select heavy doping for use, has the thick oxide layer of 300nm is as substrate, and (heavily doped silicon and oxide layer are done grid and insulating barrier respectively) used acetone, ethanol, deionized water ultrasonic 20 minutes successively, dried in the baking oven;
(2) take by weighing 0.006g P3HT, add the 2ml chlorobenzene, stir and made its whole dissolvings in 20 minutes, the P3HT solution that is made into 3mg/ml is as the P3HT ink;
(3) setting computer control program and graphic file;
(4) adopt the aerosol spray printing apparatus, set spray printing parameter (circling gas flow: 50ccm; Send fog stream: 20ccm; Ultrasonic power: 50w; Spray printing speed: 1mm/sec), the ultrasonic P3HT ink that makes by water forms micron even littler aerosol, take it to shower nozzle by inert gas, with diameter be the syringe needle of 150 μ m with its even spray printing on substrate surface, the micropore syringe needle is 3mm from the distance of substrate, make its even P3HT film that forms thick 100nm-1 μ m, put it in the baking oven 120 ℃ again and vacuumize 1h;
(5) take by weighing 0.006g P3HT and 0.01g NOPF6 is dissolved in the 2ml chlorobenzene, stir to make its whole dissolvings in 20 minutes, be made into blend solution, as electrode material;
(6) setting computer control program and graphic file;
(7) adopt the aerosol spray printing apparatus, set spray printing parameter (circling gas flow: 50ccm; Send fog stream: 20ccm; Ultrasonic power: 50w; Spray printing speed: 1mm/sec), the ultrasonic blend solution ink of P3HT and NOPF6 that makes by water forms micron even littler aerosol, take it to shower nozzle by inert gas, with diameter be the syringe needle of 150 μ m with its even spray printing on the P3HT film, the micropore syringe needle is 3mm from the distance of substrate, and making it form raceway groove length is 50 μ m, and wide is 1500 μ m, the electrode of thick 50nm-2 μ m puts it in the baking oven 120 ℃ again and vacuumizes 1h.
(8) with the prepared device performance of probe station test.
Consult Fig. 2-Fig. 3, this OTFT device has typical input voltage control output current characteristic, and its field-effect mobility is 0.55cm
2V
-1s
-1, switch current ratio is 2 * 10
4
(1) silicon chip that select heavy doping for use, has the thick oxide layer of 300nm is as substrate, and (heavily doped silicon and oxide layer are done grid and insulating barrier respectively) uses acetone successively, ethanol, and ultrasonic 20 minutes of deionized water is dried in the baking oven;
(2) take by weighing 0.006g P3HT, add the 2ml chlorobenzene, stir and made its whole dissolvings in 20 minutes, be made into the P3HT solution of 3mg/ml;
(3) substrate is placed on the spin coater sample stage, the rotating speed that spin coater is set is 3000rpm, with the P3HT drips of solution on substrate, and be paved with whole substrate, open spin-coating equipment, equipment stops after 30 seconds, forms the uniform P3HT active layer film of thick 100nm-1 μ m in substrate, puts it in the baking oven 120 ℃ again and vacuumizes 1h;
(5) take by weighing 0.006g P3HT and 0.01g NOPF
6Be dissolved in the 2ml chlorobenzene, stir and made its whole dissolvings in 20 minutes, be made into the blend solution ink, as electrode material;
(6) setting computer control program and graphic file;
(7) adopt the aerosol spray printing apparatus, set spray printing parameter (circling gas flow: 50ccm; Send fog stream: 20ccm; Ultrasonic power: 50w; Spray printing speed: 1mm/sec), by the ultrasonic P3HT and the NOPF of making of water
6The blend solution ink form micron even littler aerosol, take it to shower nozzle by inert gas, with diameter be the syringe needle of 150 μ m with its even spray printing on the P3HT film, the micropore syringe needle is 3mm from the distance of substrate, making it form raceway groove length is 50 μ m, wide is 1500 μ m, and the electrode of thick 50nm-2 μ m puts it in the baking oven 120 ℃ again and vacuumizes 1h.
(8) with the prepared device performance of probe station test, the field-effect mobility of this device is 0.76cm
2V
-1s
-1, switch current ratio is 1 * 10
5
(1) select for use heavy mixed silicon slices as substrate (doing grid simultaneously), use acetone successively, ethanol, ultrasonic 20 minutes of deionized water is dried in the baking oven;
(2) take by weighing 0.01g PMMA, add the 2ml methyl phenyl ethers anisole, stir and made its whole dissolvings in 20 minutes, be made into the PMMA solution of 5mg/ml.
(3) substrate is placed on the spin coater sample stage, the rotating speed that spin coater is set is 2500rpm, with the PMMA drips of solution on substrate, and be paved with whole substrate, open spin-coating equipment, equipment stops after 25 seconds, forms the thick uniform PMMA insulating layer of thin-film of 100nm-1 μ m in substrate, puts it in the baking oven 60 ℃ again and vacuumizes 1h;
(4) take by weighing 0.006g P3HT, add the 2ml chlorobenzene, stir and made its whole dissolvings in 20 minutes, be made into the P3HT solution of 3mg/ml;
(3) there is spin coating the substrate of PMMA thin layer to place on the spin coater sample stage, the rotating speed that spin coater is set is 2500rpm, with the P3HT drips of solution on substrate, open spin-coating equipment, equipment stops after 25 seconds, in substrate, form the thick uniform P3HT active layer film of 100nm-1 μ m, put it in the baking oven 120 ℃ again and vacuumize 1h;
(5); Take by weighing 0.006g P3HT and 0.01g NOPF
6Be dissolved in the 2ml chlorobenzene, stir and made its whole dissolvings in 20 minutes, be made into the blend solution ink, as electrode material;
(6) setting computer control program and graphic file;
(7) adopt the aerosol spray printing apparatus, set spray printing parameter (circling gas flow: 50ccm; Send fog stream: 20ccm; Ultrasonic power: 50v; Spray printing speed: 1mm/sec), by the ultrasonic P3HT and the NOPF of making of water
6The blend solution ink form micron even littler aerosol, take it to shower nozzle by inert gas, with diameter be the syringe needle of 150 μ m with its even spray printing on the P3HT film, the micropore syringe needle is 3mm from the distance of substrate, making it form raceway groove length is 50 μ m, wide is 1500 μ m, and the electrode of thick 50nm-2 μ m puts it in the baking oven 120 ℃ again and vacuumizes 1h.
(8) with the prepared device performance of probe station test, the field-effect mobility of this device is 0.4cm
2V
-1s
-1, switch current ratio is 1.8 * 10
4
(1) select for use flexible PET as substrate, use acetone successively, ethanol, ultrasonic 20 minutes of deionized water is dried in the baking oven;
(2) setting computer control program and graphic file
(3) adopt the aerosol spray printing apparatus, set spray printing parameter (circling gas flow: 50ccm; Send fog stream: 20ccm; Ultrasonic power: 50v; Spray printing speed: 1mm/sec), the ultrasonic Ag ink that makes by water forms micron even littler aerosol, take it to shower nozzle by inert gas, with diameter be the syringe needle of 150 μ m with its even spray printing on substrate, the micropore syringe needle is 3mm from the distance of substrate, makes its shape grow into 1500 μ m, and wide is 500 μ m, the gate electrode of thick 50nm-1 μ m puts it into 235 ℃ of annealing 30min in the baking oven again.
(4) take by weighing 0.01g PMMA, add the 2ml methyl phenyl ethers anisole, stir and made its whole dissolvings, the PMMA solution of the 5mg/ml that is made in 20 minutes.
(5) substrate is placed on the spin coater sample stage, the rotating speed that spin coater is set is 2500rpm, with the PMMA drips of solution on substrate, and be paved with whole substrate, open spin-coating equipment, equipment stops after 25 seconds, forms the thick uniform PMMA insulating layer of thin-film of 100nm-1 μ m in substrate, puts it in the baking oven 60 ℃ again and vacuumizes 1h;
(6) take by weighing 0.006g P3HT, add the 2ml chlorobenzene, stir and made its whole dissolvings in 20 minutes, be made into the P3HT solution of 3mg/ml;
(7) there is spin coating the substrate of PMMA thin layer to place on the spin coater sample stage, the rotating speed that spin coater is set is 2500rpm, with the P3HT drips of solution on substrate, and be paved with whole substrate, open spin-coating equipment, equipment stops after 25 seconds, forms the thick uniform P3HT active layer film of 100nm-1 μ m in substrate, puts it in the baking oven 120 ℃ again and vacuumizes 1h;
(8) take by weighing 0.006g P3HT and 0.01g NOPF
6Be dissolved in the 2ml chlorobenzene, stir and made its whole dissolvings in 20 minutes, be made into the blend solution ink, as electrode material;
(9) setting computer control program and graphic file;
(10) adopt the aerosol spray printing apparatus, set spray printing parameter (circling gas flow: 50ccm; Send fog stream: 20ccm; Ultrasonic power: 50v; Spray printing speed: 1mm/sec), by the ultrasonic P3HT and the NOPF of making of water
6The blend solution ink form micron even littler aerosol, take it to shower nozzle by inert gas, with diameter be the syringe needle of 150 μ m with its even spray printing on the P3HT film, the micropore syringe needle is 3mm from the distance of substrate, making it form raceway groove length is 50 μ m, wide is 1500 μ m, and the electrode of thick 50nm-2 μ m puts it in the baking oven 120 ℃ again and vacuumizes 1h.
(11) with the prepared device performance of probe station test, the field-effect mobility of this device is 0.2cm
2V
-1s
-1, switch current ratio is 3.2 * 10
4
In addition, with NOPF
6, contain Fe
3+Salt or I
2Do source-drain electrode for the mixed solution of dopant and other polythiophene system and also can produce result similar to the aforementioned embodiment.
It is pointed out that the foregoing description only is explanation technical conceive of the present invention and characteristics, its purpose is to allow the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (10)
1. OTFT, comprise substrate, gate electrode, source electrode, drain electrode, insulating barrier and active layer, it is characterized in that: described active layer comprises the thin layer of being made up of organic semiconducting materials, described source electrode and drain electrode all are thin layers that the mixture by dopant and this organic semiconducting materials forms, and wherein the concentration of dopant is 10-50wt%;
Described dopant is at least NOPF
6, contain Fe
3+Salt and I
2In any one.
2. OTFT according to claim 1 is characterized in that: described active layer is made up of the thin layer that organic semiconducting materials forms, and its thickness is 100nm-1 μ m.
3. OTFT according to claim 1 is characterized in that: the thickness of described source electrode and drain electrode is at 50nm-2 μ m.
4. OTFT according to claim 1 is characterized in that described organic semiconducting materials comprises polythiophene.
5. OTFT according to claim 1 is characterized in that: described substrate is hard substrate or flexible substrates, and described hard substrate is at least any one in silicon chip and the glassware.
6. the preparation method of OTFT according to claim 1 is characterized in that this method is:
After deposition forms organic semiconductor thin-film on the substrate,, make active layer with the solution of organic semiconducting materials again through annealing in process;
Then with the blend solution of dopant and this organic semiconducting materials being located at deposition of electrode material layer on the on-chip active layer, carry out annealing in process again, have source electrode and the drain electrode of setting pattern thereby form;
Described dopant is at least NOPF
6, contain Fe
3+Salt and I
2In any one.
7. as the preparation method of OTFT as described in the claim 6, it is characterized in that this method specifically comprises the steps:
A. successively substrate is cleaned with organic solvent and water, dry for standby then, described organic solvent is acetone and/or ethanol;
B. get polythiophene solution and evenly be coated on the substrate, make its deposition form the thick homogeneous film of 100nm-1 μ m, carry out annealing in process again, make active layer;
C. the blend solution of getting dopant and polythiophene is coated on the active layer with mode of printing, makes its deposition form electrode material layer, carries out annealing in process again, makes to have source electrode and the drain electrode of setting pattern;
Aforementioned annealing in process is to carry out under temperature is 60-120 ℃ condition, and annealing time is 30-60min.
8. as the preparation method of OTFT as described in the claim 7, it is characterized in that, be to adopt the mode of spin coating or printing that polythiophene solution is coated on the substrate in this method, and then deposit film forming.
9. as the preparation method of OTFT as described in the claim 6, it is characterized in that described organic semiconducting materials comprises polythiophene.
10. as the preparation method of OTFT as described in the claim 6, it is characterized in that described substrate is hard substrate or flexible substrates, described hard substrate is at least any one in silicon chip and the glassware.
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| CN102931351A (en) * | 2012-11-14 | 2013-02-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Polythiophene thin film field effect transistor and fabrication method thereof |
| CN103367640A (en) * | 2012-04-03 | 2013-10-23 | 诺瓦莱德公开股份有限公司 | Vertical organic transistor and production method |
| CN103706539A (en) * | 2012-10-09 | 2014-04-09 | 浙江尚颉光电科技有限公司 | Method for using ultrasonic spray printing method to prepare cesium tin triiodide thin film |
| CN103708534A (en) * | 2012-10-09 | 2014-04-09 | 浙江尚颉光电科技有限公司 | Solution method used for preparing cesium tin triiodide thin films |
| CN104638202A (en) * | 2013-11-08 | 2015-05-20 | 北京鼎材科技有限公司 | Organic thin-film transistor and production method thereof |
| CN104638106A (en) * | 2013-11-08 | 2015-05-20 | 北京鼎材科技有限公司 | Organic thin-film transistor and production method thereof |
| CN104638105A (en) * | 2013-11-08 | 2015-05-20 | 北京鼎材科技有限公司 | Organic thin-film transistor and production method thereof |
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| CN103367640A (en) * | 2012-04-03 | 2013-10-23 | 诺瓦莱德公开股份有限公司 | Vertical organic transistor and production method |
| CN103708534B (en) * | 2012-10-09 | 2015-11-18 | 浙江尚颉光电科技有限公司 | A kind of solution method prepares the method for cesium triiodide tin thin film |
| CN103706539B (en) * | 2012-10-09 | 2015-04-29 | 浙江尚颉光电科技有限公司 | Method for using ultrasonic spray printing method to prepare cesium tin triiodide thin film |
| CN103706539A (en) * | 2012-10-09 | 2014-04-09 | 浙江尚颉光电科技有限公司 | Method for using ultrasonic spray printing method to prepare cesium tin triiodide thin film |
| CN103708534A (en) * | 2012-10-09 | 2014-04-09 | 浙江尚颉光电科技有限公司 | Solution method used for preparing cesium tin triiodide thin films |
| CN102931351A (en) * | 2012-11-14 | 2013-02-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Polythiophene thin film field effect transistor and fabrication method thereof |
| CN104638202B (en) * | 2013-11-08 | 2017-09-29 | 北京鼎材科技有限公司 | A kind of OTFT and preparation method thereof |
| CN104638105A (en) * | 2013-11-08 | 2015-05-20 | 北京鼎材科技有限公司 | Organic thin-film transistor and production method thereof |
| CN104638106A (en) * | 2013-11-08 | 2015-05-20 | 北京鼎材科技有限公司 | Organic thin-film transistor and production method thereof |
| CN104638202A (en) * | 2013-11-08 | 2015-05-20 | 北京鼎材科技有限公司 | Organic thin-film transistor and production method thereof |
| CN104638106B (en) * | 2013-11-08 | 2017-12-05 | 北京鼎材科技有限公司 | A kind of OTFT and preparation method thereof |
| CN104638105B (en) * | 2013-11-08 | 2018-01-23 | 北京鼎材科技有限公司 | A kind of OTFT and preparation method thereof |
| CN110361422A (en) * | 2019-07-12 | 2019-10-22 | 北京机械设备研究所 | A kind of preparation method and device of gas sensor |
| CN110361422B (en) * | 2019-07-12 | 2022-07-08 | 北京机械设备研究所 | Preparation method and device of gas sensor |
| CN113571651A (en) * | 2021-07-21 | 2021-10-29 | 北京大学 | Solution medium annealing method for preparing perovskite thin film photoelectric device |
| CN113571651B (en) * | 2021-07-21 | 2023-10-20 | 北京大学 | Solution medium annealing method for preparing perovskite thin film photoelectric device |
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Application publication date: 20111214 |