CN1145800C - 半导体器件及传感器 - Google Patents
半导体器件及传感器 Download PDFInfo
- Publication number
- CN1145800C CN1145800C CNB98116658XA CN98116658A CN1145800C CN 1145800 C CN1145800 C CN 1145800C CN B98116658X A CNB98116658X A CN B98116658XA CN 98116658 A CN98116658 A CN 98116658A CN 1145800 C CN1145800 C CN 1145800C
- Authority
- CN
- China
- Prior art keywords
- thin plate
- substrate
- semiconductor devices
- mobile
- phalangeal palte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000000034 method Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 claims 1
- 230000001133 acceleration Effects 0.000 abstract description 13
- 230000004044 response Effects 0.000 abstract description 3
- 230000003321 amplification Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000026731 phosphorylation Effects 0.000 description 1
- 238000006366 phosphorylation reaction Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Pressure Sensors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/903,087 US5914521A (en) | 1997-07-30 | 1997-07-30 | Sensor devices having a movable structure |
US903087 | 1997-07-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1213778A CN1213778A (zh) | 1999-04-14 |
CN1145800C true CN1145800C (zh) | 2004-04-14 |
Family
ID=25416922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB98116658XA Expired - Lifetime CN1145800C (zh) | 1997-07-30 | 1998-07-29 | 半导体器件及传感器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5914521A (zh) |
JP (1) | JP4262327B2 (zh) |
KR (1) | KR100489157B1 (zh) |
CN (1) | CN1145800C (zh) |
DE (1) | DE19830476B4 (zh) |
TW (1) | TW368677B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6037211A (en) * | 1997-05-05 | 2000-03-14 | Vanguard International Semiconductor Corporation | Method of fabricating contact holes in high density integrated circuits using polysilicon landing plug and self-aligned etching processes |
US6228275B1 (en) * | 1998-12-10 | 2001-05-08 | Motorola, Inc. | Method of manufacturing a sensor |
DE19949605A1 (de) | 1999-10-15 | 2001-04-19 | Bosch Gmbh Robert | Beschleunigungssensor |
US6677225B1 (en) | 2000-07-14 | 2004-01-13 | Zyvex Corporation | System and method for constraining totally released microcomponents |
DE10055421A1 (de) * | 2000-11-09 | 2002-05-29 | Bosch Gmbh Robert | Verfahren zur Erzeugung einer mikromechanischen Struktur und mikromechanische Struktur |
KR100418624B1 (ko) * | 2001-02-12 | 2004-02-11 | (주) 인텔리마이크론즈 | 자이로스코프 및 그 제조 방법 |
CN100335905C (zh) * | 2001-09-04 | 2007-09-05 | 东京毅力科创株式会社 | 具有可动质量块的微结构 |
US7232701B2 (en) * | 2005-01-04 | 2007-06-19 | Freescale Semiconductor, Inc. | Microelectromechanical (MEM) device with a protective cap that functions as a motion stop |
JP2011174881A (ja) * | 2010-02-25 | 2011-09-08 | Asahi Kasei Electronics Co Ltd | 静電容量型加速度センサ |
WO2013071118A1 (en) * | 2011-11-09 | 2013-05-16 | Robert Bosch Gmbh | Proof mass positioning features having curved contact surfaces |
FR3000484B1 (fr) * | 2012-12-27 | 2017-11-10 | Tronic's Microsystems | Dispositif micro-electromecanique comprenant une masse mobile apte a se deplacer hors du plan |
US9638712B2 (en) * | 2015-01-22 | 2017-05-02 | Nxp Usa, Inc. | MEMS device with over-travel stop structure and method of fabrication |
JP2020024098A (ja) * | 2018-08-06 | 2020-02-13 | セイコーエプソン株式会社 | 物理量センサー、センサーデバイス、電子機器、および移動体 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4882933A (en) * | 1988-06-03 | 1989-11-28 | Novasensor | Accelerometer with integral bidirectional shock protection and controllable viscous damping |
DE4309917A1 (de) * | 1992-03-30 | 1993-10-07 | Awa Microelectronics | Verfahren zur Herstellung von Siliziummikrostrukturen sowie Siliziummikrostruktur |
US5181156A (en) * | 1992-05-14 | 1993-01-19 | Motorola Inc. | Micromachined capacitor structure and method for making |
JP3385688B2 (ja) * | 1993-12-13 | 2003-03-10 | 株式会社デンソー | 半導体ヨーレートセンサおよびその製造方法 |
US5542295A (en) * | 1994-12-01 | 1996-08-06 | Analog Devices, Inc. | Apparatus to minimize stiction in micromachined structures |
-
1997
- 1997-07-30 US US08/903,087 patent/US5914521A/en not_active Expired - Lifetime
-
1998
- 1998-05-21 TW TW087107899A patent/TW368677B/zh not_active IP Right Cessation
- 1998-07-06 JP JP20723598A patent/JP4262327B2/ja not_active Expired - Lifetime
- 1998-07-08 DE DE19830476A patent/DE19830476B4/de not_active Expired - Fee Related
- 1998-07-29 CN CNB98116658XA patent/CN1145800C/zh not_active Expired - Lifetime
- 1998-07-30 KR KR1019980030781A patent/KR100489157B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE19830476A1 (de) | 1999-02-04 |
JP4262327B2 (ja) | 2009-05-13 |
DE19830476B4 (de) | 2007-07-05 |
CN1213778A (zh) | 1999-04-14 |
US5914521A (en) | 1999-06-22 |
JPH1168122A (ja) | 1999-03-09 |
KR100489157B1 (ko) | 2006-05-11 |
TW368677B (en) | 1999-09-01 |
KR19990014288A (ko) | 1999-02-25 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FREEDOM SEMICONDUCTORS CO. Free format text: FORMER OWNER: MOTOROLA, INC. Effective date: 20040813 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20040813 Address after: Texas in the United States Patentee after: FreeScale Semiconductor Address before: Illinois Instrunment Patentee before: Motorola, Inc. |
|
C56 | Change in the name or address of the patentee |
Owner name: FISICAL SEMICONDUCTOR INC. Free format text: FORMER NAME: FREEDOM SEMICONDUCTOR CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Texas in the United States Patentee after: FREESCALE SEMICONDUCTOR, Inc. Address before: Texas in the United States Patentee before: FreeScale Semiconductor |
|
CP01 | Change in the name or title of a patent holder |
Address after: Texas in the United States Patentee after: NXP USA, Inc. Address before: Texas in the United States Patentee before: FREESCALE SEMICONDUCTOR, Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CX01 | Expiry of patent term |
Granted publication date: 20040414 |
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CX01 | Expiry of patent term |