CN114540817A

CN114540817A - Etching solution composition, display panel and preparation method thereof

Info

Publication number: CN114540817A
Application number: CN202210128160.9A
Authority: CN
Inventors: 李恩庆; 康明伦
Original assignee: TCL Huaxing Photoelectric Technology Co Ltd
Current assignee: TCL Huaxing Photoelectric Technology Co Ltd
Priority date: 2022-02-11
Filing date: 2022-02-11
Publication date: 2022-05-27

Abstract

The application provides an etching solution composition, a display panel and a preparation method of the display panel. In the application, the etching solution composition without fluorine is formed by adding the carboxylic acid into the etching solution composition, so that the film layer is prevented from being damaged by the etching solution composition, and meanwhile, the stability of the etching solution composition is improved.

Description

Etching solution composition, display panel and preparation method thereof

Technical Field

The application relates to the technical field of display, in particular to an etching solution composition, a display panel and a preparation method of the display panel.

Background

The display panel generally includes a substrate and a copper molybdenum laminated layer disposed on the substrate, and an etching solution for etching the copper molybdenum laminated layer is generally an etching solution containing fluorine, such as a fluorine-containing hydrogen peroxide etching solution.

Disclosure of Invention

The embodiment of the application provides an etching solution composition and a display panel, and aims to solve the problem that a fluorine-containing etching solution damages a film layer except a copper-molybdenum laminated metal layer.

The application provides an etching solution composition, which comprises hydrogen peroxide, a chelating agent, an auxiliary chelating agent, a corrosion inhibitor, an etchant, a pH regulator and water, wherein the auxiliary chelating agent is carboxylic acid.

Optionally, in some embodiments of the present disclosure, the weight of the hydrogen peroxide is 15 to 25%, the weight of the chelating agent is 0.5 to 3%, the weight of the auxiliary chelating agent is 0.1 to 3%, the weight of the corrosion inhibitor is 0.01 to 2%, the weight of the etchant is 0.01 to 5%, the weight of the pH adjusting agent is 0.05 to 2%, and the balance is the water, based on 100% of the total weight of the etching solution composition.

Optionally, in some embodiments of the present disclosure, the weight of the hydrogen peroxide is 19 to 23%, the weight of the chelating agent is 1 to 2%, the weight of the auxiliary chelating agent is 0.5 to 2%, the weight of the corrosion inhibitor is 0.05 to 1%, the weight of the etchant is 0.1 to 0.5%, the weight of the pH adjusting agent is 0.1 to 2%, and the balance is the water, based on 100% of the total weight of the etching solution composition.

Optionally, in some embodiments herein, the auxiliary chelating agent is an organic acid containing at least one carboxyl group and no nitrogen atom.

Optionally, in some embodiments of the present application, the organic acid containing at least one carboxyl group and no nitrogen atom includes one or a combination of citric acid, glycolic acid, oxalic acid, malonic acid, valeric acid, propionic acid, tartaric acid, gluconic acid, and succinic acid.

Optionally, in some embodiments of the present application, the chelating agent is a coordination compound, the corrosion inhibitor is an azole compound, the etchant is one or a combination of a phosphoric acid compound and a phosphate compound, and the pH adjuster is a compound containing hydroxide ions.

Optionally, in some embodiments of the present application, the chelating agent comprises iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylnitroacetic acid, aminotri (methylphosphoric acid), (1-hydroxyethane-1, 1-diene compound) bis (phosphoric acid), ethylenediaminetetra (methylphosphoric acid), diethylenetriaminepenta (methylphosphoric acid), alanine, glutamic acid, aminobutyric acid, and glycine, and the corrosion inhibitor comprises 3-amino-1, 2, 3-triazole, 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 3-triazole, 4-amino-1, 2, 4-triazole, 5-methyltetrazole, 5-aminotetrazole, imidazole, and pyrazole, the etchant comprises one or more of phosphoric acid, phosphorous acid, hypophosphorous acid and pyrophosphoric acid, and the pH regulator comprises one or more of potassium hydroxide, sodium hydroxide and ammonium hydroxide.

The application also provides a preparation method of the display panel, which comprises the following steps:

providing a substrate;

forming a copper-molybdenum lamination layer on the substrate;

and etching the copper-molybdenum laminated layer by using the etching solution composition to form copper-molybdenum laminated parts arranged at intervals.

The application also provides a display panel, display panel include the base plate and the interval set up in copper molybdenum on the base plate overlaps the portion.

Optionally, in some embodiments of the present application, an acute angle between the sidewall of the copper molybdenum stack and the substrate is 50 to 80 degrees.

The application provides an etching solution composition, a display panel and a preparation method of the display panel. In the application, the etching solution composition without fluorine is formed by adding the carboxylic acid into the etching solution composition, so that the etching solution composition is prevented from damaging a film layer, and meanwhile, the copper-molybdenum laminated layer has good etching performance and the stability of the etching solution composition is improved.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic flow chart of a display panel manufacturing method provided in an embodiment of the present application.

FIG. 2 is a schematic diagram of a front scanning electron display micromirror of a display panel according to an embodiment of the present application.

FIG. 3 is a schematic diagram of a side-scanning electron display micromirror of a display panel according to an embodiment of the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device. In the present application, the "reaction" may be a chemical reaction or a physical reaction.

The application provides an etching solution composition, a display panel and a preparation method of the display panel.

In the application, the etching solution composition without fluorine is formed by adding the carboxylic acid into the etching solution composition, so that the etching solution composition is prevented from damaging a film layer, and meanwhile, the copper-molybdenum laminated layer has good etching performance and the stability of the etching solution composition is improved.

The following is a detailed description:

the application provides an etching solution composition, which comprises hydrogen peroxide, a chelating agent, an auxiliary chelating agent, a corrosion inhibitor, an etchant, a pH regulator and water.

In one embodiment, the weight of the hydrogen peroxide is 15-25% based on 100% of the total weight of the etching solution composition. Specifically, the weight of the hydrogen peroxide may be 15%, 17%, 20%, 23%, 25%, or the like, based on 100% by weight of the total etching solution composition. In the application, the weight of the hydrogen peroxide is set to be 15-25%, so that when the etching solution composition is used for etching the copper-molybdenum laminated layer, the etching efficiency can be improved, and the performance of the etching solution composition can be improved.

In one embodiment, the weight of the hydrogen peroxide is 19-23% based on 100% of the total weight of the etching solution composition. Specifically, the weight of the hydrogen peroxide may be 19%, 20%, 22%, 23%, or the like, based on 100% by weight of the total etching solution composition. In the application, the weight of the hydrogen peroxide is set to be 19-23%, so that when the etching solution composition is used for etching the copper-molybdenum laminated layer, the etching efficiency can be further improved, and the performance of the etching solution composition can be further improved.

The chelating agent is a complex compound. Specifically, the chelating agent includes one or a combination of iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylnitroacetic acid, aminotri (methyl phosphoric acid), (1-hydroxyethane-1, 1-diene compound) bis (phosphoric acid), ethylenediamine tetra (methyl phosphoric acid), diethylenetriaminepenta (methyl phosphoric acid), alanine, glutamic acid, aminobutyric acid, and glycine.

In the application, the chelating agent is added into the etching solution composition, and the chelating agent is a coordination compound, so that the chelating agent can inhibit the decomposition of hydrogen peroxide and passivate metal ions generated in an etching process, thereby improving the stability of the etching solution composition.

In one embodiment, the chelating agent is 0.5-3% by weight, based on 100% by weight of the etching solution composition. Specifically, the chelating agent may be present in an amount of 0.5%, 1%, 2%, 3%, or the like, based on 100% by weight of the total etching solution composition. In the application, the chelating agent is added in an amount of 0.5-3 wt% to further passivate metal ions generated during the etching process, thereby further improving the stability of the etching solution composition.

In one embodiment, the chelating agent is 1-2% by weight, based on 100% by weight of the etching solution composition. Specifically, the chelating agent may be 1.5%, 1.7%, 1.9%, 2%, or the like, by weight, based on 100% by weight of the total etching solution composition. In the application, the chelating agent accounts for 1-2% by weight, so that metal ions generated in the etching process are further passivated, and the stability of the etching solution composition is further improved.

The auxiliary chelating agent is carboxylic acid. Specifically, the auxiliary chelating agent is an organic acid containing at least one carboxyl group and no nitrogen atom. Further, the organic acid containing at least one carboxyl group and no nitrogen atom includes one or a combination of citric acid, glycolic acid, oxalic acid, malonic acid, valeric acid, propionic acid, fruit acid, gluconic acid and succinic acid.

In the application, the auxiliary chelating agent is added into the etching solution composition, and the auxiliary chelating agent is carboxylic acid, so that when metal ions, such as copper ions or molybdenum ions, are increased in the etching process of the etching solution composition, the stability of the etching solution composition is ensured.

In one embodiment, the weight of the auxiliary chelating agent is 0.1-3% based on 100% of the total weight of the etching solution composition. Specifically, the weight of the auxiliary chelating agent may be 0.1%, 0.5%, 1%, 2%, 3%, or the like, based on 100% by weight of the total etching solution composition. In the application, the weight of the auxiliary chelating agent is set to be 0.1-3%, so that the stability of the etching solution composition can be improved, and the etching solution composition has a better etching profile when etching the copper-molybdenum laminated layer.

In one embodiment, the weight of the auxiliary chelating agent is 0.5-2% based on 100% of the total weight of the etching solution composition. Specifically, the weight of the auxiliary chelating agent may be 0.5%, 1%, 1.2%, 2%, or the like, based on 100% of the total weight of the etchant composition. In the application, the weight of the auxiliary chelating agent is set to be 0.5-2%, so that the stability of the etching solution composition can be further improved, and the etching solution composition has a better etching profile when the copper-molybdenum laminated layer is etched.

The corrosion inhibitor is an azole compound. Specifically, the corrosion inhibitor comprises one or more of 3-amino-1, 2, 3-triazole, 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 3-triazole, 4-amino-1, 2, 4-triazole, 5-methyltetrazole, 5-aminotetrazole, imidazole and pyrazole. In the application, the corrosion inhibitor is added into the etching solution composition, and the corrosion inhibitor is an azole compound, so that the stability of the etching solution composition and the etching efficiency can be improved, and the performance of the etching solution composition can be improved.

In one embodiment, the corrosion inhibitor is 0.01-2% by weight of the total etching solution composition as 100%. Specifically, the corrosion inhibitor may be 0.01%, 0.5%, 1%, 2%, or the like, based on 100% by weight of the total etching solution composition. In the application, the corrosion inhibitor is set to be 0.01-2%, so that the stability of the etching solution composition and the etching efficiency can be improved, the performance of the etching solution composition is improved, and the critical dimension bias (CD bias) of the copper-molybdenum lamination is reduced when the etching solution composition etches the copper-molybdenum lamination, so that the copper-molybdenum lamination has a good etching profile.

In one embodiment, the corrosion inhibitor is 0.05-1% by weight of the total etching solution composition as 100%. Specifically, the corrosion inhibitor may be 0.05%, 0.5%, 1.5%, or 1% or the like, based on 100% by weight of the total etching solution composition. In the application, the corrosion inhibitor is set to be 0.05-1%, so that the stability of the etching solution composition can be further improved, the etching efficiency can be further improved, the performance of the etching solution composition can be further improved, the critical deviation of the copper-molybdenum lamination can be reduced when the copper-molybdenum lamination is etched by the etching solution composition, and the copper-molybdenum lamination can further have a good etching profile.

In one embodiment, the corrosion inhibitor is 0.05-0.5% by weight, based on 100% by weight of the etching solution composition. Specifically, the corrosion inhibitor may be 0.05%, 0.08%, 0.2%, 0.5%, or the like, based on 100% by weight of the total etching solution composition. In the application, the corrosion inhibitor is set to be 0.05-0.5%, so that the stability of the etching solution composition can be further improved, the etching efficiency can be further improved, the performance of the etching solution composition can be further improved, the critical deviation of the copper-molybdenum lamination can be reduced when the copper-molybdenum lamination is etched by the etching solution composition, and the copper-molybdenum lamination can further have a good etching profile.

The etchant is one or two of phosphoric acid compounds and phosphate compounds. Specifically, the etchant includes one or more of phosphoric acid, phosphorous acid, hypophosphorous acid and pyrophosphoric acid. In the application, the addition of the etching agent into the etching solution composition improves the etching efficiency and stability of the etching solution composition during etching, thereby improving the performance of the etching solution composition.

In one embodiment, the weight ratio of the phosphoric acid compound to the phosphate compound is 2-3:1 when the phosphoric acid compound and the phosphate compound are mixed. In the application, when the phosphoric acid compound and the phosphate compound are mixed, the weight ratio of the phosphoric acid compound to the phosphate compound is set to be 2-3:1, and after replacement, the pH can be stably inhibited, and meanwhile, the stability of the etching efficiency of the etching solution composition is ensured.

In one embodiment, the weight of the etchant is 0.1-0.5% based on 100% of the total weight of the etching solution composition. Specifically, the weight of the etchant is 0.1%, 0.3%, 0.5%, or the like, based on 100% by weight of the total etching solution composition. In the application, the weight of the etchant is set to be 0.1-0.5%, so that the etching efficiency of the etching solution can be improved, and the etching performance of the etching solution composition can be improved.

In one embodiment, the weight of the etchant is 0.1-0.5% based on 100% of the total weight of the etching solution composition. Specifically, the weight of the etchant is 0.1%, 0.3%, 0.5%, or the like, based on 100% by weight of the total etching solution composition. In the application, the weight of the etchant is set to be 0.1-0.5%, so that the etching efficiency of the etching solution can be further improved, and the etching performance of the etching solution composition can be further improved.

In one embodiment, the weight of the etchant is 0.3-0.8% based on 100% of the total weight of the etching solution composition. Specifically, the weight of the etchant is 0.3%, 0.5%, 0.8%, or the like, based on 100% by weight of the total etching solution composition. In the application, the weight of the etchant is set to be 0.3-0.8%, so that the etching efficiency of the etching solution can be further improved, and the etching performance of the etching solution composition can be further improved.

The pH regulator is a compound containing hydroxide ions. Specifically, the pH regulator comprises one or more of potassium hydroxide, sodium hydroxide and ammonium hydroxide. In the application, the pH regulator is added into the etching solution composition, so that the pH of the etching solution composition can be controlled within a specific range, the stability of the etching solution composition is improved, the etching effect and the etching efficiency of the etching solution composition are improved, and the performance of the etching solution composition is improved.

In one embodiment, the weight of the pH adjuster is 0.05-2% based on 100% of the total weight of the etching solution composition. Specifically, the weight of the pH adjuster may be 0.05%, 0.1%, 1%, 1.5%, 2%, or the like, based on 100% of the total weight of the etching solution composition. In the application, the weight of the pH regulator is set to be 0.05-2%, so that the stability of the etching solution composition is improved, and the etching effect and the etching efficiency of the etching solution composition are improved, thereby improving the performance of the etching solution composition.

In one embodiment, the weight of the pH adjuster is 0.1-2% based on 100% of the total weight of the etching solution composition. Specifically, the weight of the pH adjuster may be 0.1%, 1%, 1.5%, 2%, or the like, based on 100% by weight of the total etching solution composition. In the application, the weight of the pH regulator is set to be 0.1-2%, so that the stability of the etching solution composition is further improved, and the etching effect and the etching efficiency of the etching solution composition are further improved, thereby further improving the performance of the etching solution composition.

In one embodiment, the weight of the pH adjuster is 0.1-1% based on 100% of the total weight of the etching solution composition. Specifically, the weight of the pH adjuster may be 0.1%, 0.5%, 0.8%, 1%, or the like, based on 100% of the total weight of the etching solution composition. In the application, the weight of the pH regulator is set to be 0.1-1%, so that the stability of the etching solution composition is further improved, and the etching effect and the etching efficiency of the etching solution composition are further improved, thereby further improving the performance of the etching solution composition.

In one embodiment, the etching solution composition further comprises a stabilizer. The stabilizer comprises a polyalcohol compound. Such as polyethylene glycol. In the application, the stabilizer is added into the etching solution composition, so that the viscosity of the etching solution composition can be improved, and the stability of the etching solution composition can be improved.

In one embodiment, the weight of the stabilizer is 0.5-3% based on 100% of the total weight of the etching solution composition. Specifically, the weight of the stabilizer may be 0.5%, 1%, 2%, 3%, or the like, based on 100% by weight of the total etching solution composition. In the present application, setting the weight of the stabilizer to 0.5 to 3% can increase the viscosity of the etching solution composition, thereby improving the stability of the etching solution composition.

In one embodiment, the weight of the stabilizer is 0.5-1% based on 100% of the total weight of the etching solution composition. Specifically, the weight of the stabilizer may be 0.5%, 0.6%, 0.8%, 1%, or the like, based on 100% of the total weight of the etching solution composition. In the present application, setting the weight of the stabilizer to 0.5 to 1% can further increase the viscosity of the etching solution composition, thereby further improving the stability of the etching solution composition.

The water is deionized water or deionized water having a non-resistance value of 18 M.OMEGA.. cm or more.

As an example, the etching solution composition comprises 20% by weight of hydrogen peroxide, 2% by weight of diethylnitroacetic acid, 1% by weight of fruit acid, 0.4% by weight of 5-aminotetrazole, 0.7% by weight of phosphoric acid, 0.5% by weight of potassium hydroxide, and the balance of water, based on 100% by weight of the total etching solution composition; alternatively, the etching solution composition comprises 22% by weight of hydrogen peroxide, 1.8% by weight of aminotri (methyl phosphonic acid), 1.5% by weight of malonic acid, 0.1% by weight of 5-methyltetrazole, 0.5% by weight of phosphorous acid, 0.8% by weight of ammonium hydroxide, and the balance of water, based on 100% by weight of the total etching solution composition.

The pH value of the etching solution composition can reach 4-6. Preferably, the pH value of the etching solution composition provided by the application can reach 4-5.

b11: a substrate is provided.

B12: a copper molybdenum stack is formed on a substrate.

B13: the etching solution composition provided by the application is used for etching the copper-molybdenum laminated layer to form copper-molybdenum laminated parts arranged at intervals.

Referring to fig. 1, the present application further provides a method for manufacturing a display panel, including:

example 1:

b11: a substrate is provided.

In one embodiment, an organic insulating layer is formed on a substrate. The method of forming the organic insulating layer includes evaporation, sputtering, or the like. Then, an active layer 100 is formed on the organic insulating layer. The material of the active layer 100 includes indium gallium zinc oxide, amorphous silicon, polycrystalline silicon, or the like. The following description will be given taking an example in which the active layer 100 is formed of Indium Gallium Zinc Oxide (IGZO).

B12: a copper molybdenum stack is formed on a substrate.

Forming a copper-molybdenum lamination layer 200 on the active layer, wherein the copper-molybdenum lamination layer 200 comprises a molybdenum-titanium layer and a copper layer, and the copper layer is arranged between the molybdenum-titanium layer and the molybdenum-titanium layer; then, a photoresist layer is formed on the copper molybdenum stack 200.

In another embodiment, the copper molybdenum stack may be two layers, a molybdenum titanium layer and a copper layer.

Specifically, the etching solution composition comprises 20% by weight of hydrogen peroxide (H) based on 100% by weight of the total etching solution composition₂O₂) 1% by weight of diethylnitroacetic acid (DPA), 0.5% by weight of fruit acid, 0.1% by weight of 5-Aminotetrazole (ATZ), 1% by weight of phosphoric acid (H)₃PO₄) 1.5% by weight of ammonium hydroxide (NH)₄OH), 0.5% by weight of polyethylene glycol (PEG) and the balance water. The total etching time is over-etched by 50% based on End Point Detection (EPD (etching of copper molybdenum stack outside the photoresist layer)), and the etching time of the active layer 100 is 300 s. The copper molybdenum stack 200 is a source drain.

Then, after drying, the etching profile of the copper molybdenum clad part 200 was confirmed by a scanning electron microscope. In the case of the copper-molybdenum stack, the side etching was observed from the end of the photoresist layer to the copper-molybdenum stack 200, and the remaining level of the etching residue was observed from the upper surface of the lower film.

In order to determine whether the active layer 100 is damaged, the level difference of the etched test piece is measured by using a level difference meter.

The service life of the electrolytic cell was judged to be the limit if the change rate of CD bias and Taper exceeds 10% after the copper layer was dissolved at intervals of 1000ppm (parts per million concentration) of copper.

Example 2:

it should be noted that example 2 differs from example 1 in that: the etching solution composition comprises 20 wt% of hydrogen peroxide (H) based on 100 wt% of the total weight of the etching solution composition₂O₂) 2% by weight of diethylnitroacetic acid (DPA), 0.5% by weight of fruit acid, 0.1% by weight of 5-Aminotetrazole (ATZ), 1% by weight of phosphoric acid (H)₃PO₄) 1.5% by weight of ammonium hydroxide (NH)₄OH), 0.5% by weight of polyethylene glycol (PEG) and the balance water. The rest is the same as example 1, and is not described here.

Example 3:

it should be noted that example 3 is the same as example 31, the difference is that: the etching solution composition comprises 20 wt% of hydrogen peroxide (H) based on 100 wt% of the total weight of the etching solution composition₂O₂) 2% by weight of diethylnitroacetic acid (DPA), 0.5% by weight of fruit acid, 0.2% by weight of 5-Aminotetrazole (ATZ), 1% by weight of phosphoric acid (H)₃PO₄) 1.5% by weight of ammonium hydroxide (NH)₄OH), 0.5% by weight of polyethylene glycol (PEG) and the balance water. The rest is the same as example 1, and is not described here.

Comparative example 1:

comparative example 1 differs from example 1 in that: the etching solution composition comprises 20 wt% of hydrogen peroxide (H) based on 100 wt% of the total weight of the etching solution composition₂O₂) 2% by weight of diethylnitroacetic acid (DPA), 0.5% by weight of fruit acid, 0.2% by weight of 5-Aminotetrazole (ATZ), 1% by weight of phosphoric acid (H)₃PO₄) 1.5% by weight of ammonium hydroxide (NH)₄OH), 0.5% by weight of polyethylene glycol (PEG), 0.05% by weight of NH₄HF and the balance water. The rest is the same as example 1, and is not described here.

Comparative example 2: comparative example 2 differs from example 1 in that: the etching solution composition comprises 20 wt% of hydrogen peroxide (H) based on 100 wt% of the total weight of the etching solution composition₂O₂) 2% by weight of diethylnitroacetic acid (DPA), 0.5% by weight of fruit acid, 0.2% by weight of 5-Aminotetrazole (ATZ), 1% by weight of phosphoric acid (H)₃PO₄) 0.5% by weight of polyethylene glycol (PEG) and the balance of water. The rest is the same as example 1, and is not described here.

Comparative example 3:

comparative example 3 is different from example 1 in that: the etching solution composition comprises 20 wt% of hydrogen peroxide (H) based on 100 wt% of the total weight of the etching solution composition₂O₂) 2% by weight of diethylnitroacetic acid (DPA), 0.2% by weight of 5-Aminotetrazole (ATZ), 1% by weight of phosphoric acid (H)₃PO₄) 1.5% by weight of ammonium hydroxide (NH)₄OH) and the balance water. The rest is the same as example 1, and is not described here.

Comparative example 4:

comparative example 4 is different from example 1 in that: the etching solution composition comprises 20 wt% of hydrogen peroxide (H) based on 100 wt% of the total weight of the etching solution composition₂O₂) 2% by weight of diethylnitroacetic acid (DPA), 0.5% by weight of fruit acid, 0.2% by weight of 5-Aminotetrazole (ATZ), 1% by weight of phosphoric acid (H)₃PO₄) 3% by weight of ammonium hydroxide (NH)₄OH) and the balance water. The rest is the same as example 1, and is not described here.

Referring to table 1, table 1 shows the components of the etching solution compositions of examples 1 to 3 and the components of the etching solution compositions of comparative examples 1 to 4.

Table 1:

in the table, "-" indicates that no component was changed.

Referring to table 2, table 2 shows data for etching copper molybdenum laminates using the compositions of the etchant compositions of examples 1 to 3 in table 1 and the compositions of the etchant compositions of comparative examples 1 to 4.

Table 2:

as is clear from tables 1 and 2, the pH of the etchant composition provided in the present application is higher than that of the prior art hydrogen peroxide-based etchant, and the pH of the prior art hydrogen peroxide-based etchant is 1 to 3, even if the etchant composition does not contain a fluorine compound capable of etching a molybdenum titanium layer.

Compared with the etching solution composition of comparative example 2, the etching solution composition of example 1 has an EPD of 143s and the etching solution composition of comparative example 2 has an EPD of 143s, so that the etching rates of the etching solution composition provided by the present application for etching the MoTi/Cu/MoTi three-layer metal film are the same, and both MoTi and Cu can be effectively etched.

Referring to fig. 2 and 3, when the etching solution composition of example 2 was used to etch a MoTi/Cu/MoTi three-layer metal film, the tail of the upper mo-ti layer was 0.0477 μm, and the residue of the tail of the upper mo-ti layer was within 0.05 ± 0.02 μm, which resulted in less MoTi residue, compared to the etching solution composition of comparative example 4. Meanwhile, the CD bias is 0.6622 μm, and the CD bias is in the range of 0.6-0.8 μm. Therefore, the etching liquid composition provided by the application is used for etching MoTi/Cu/MoTi, and the etching profile is better than that obtained by using the etching liquid composition in the prior art.

The tail of the upper molybdenum titanium layer is remained in the range of 0.05 +/-0.02 mu m, and the MoTi residue is less, which means that the etching profile is good.

In addition, as a result of testing the presence or absence of IGZO damage, the IGZO damage of the etchant composition of the present invention was much reduced in the level difference of IGZO and the IGZO damage < ≦ IGZO damage, compared to comparative example 2

The etching solution composition provided by the present application can etch the copper-molybdenum laminate without damaging the active layer 100.

As is clear from comparative example 2 and example 3, when only the content of the pH adjuster was changed under the same conditions, the IGZO damage results were different, and it was found that the lower the pH, the smaller the tail of the upper molybdenum titanium layer, and the lower the IGZO damage.

In addition, as a result of evaluating the bath life of the etchant composition, comparative example 1 and example 2 were all the same except that the content of the chelating agent was changed. The service life of the electrolytic bath with copper metal concentration is 1000ppm and 3000ppm respectively, so that when the proper content of the chelating agent is selected, the etching solution composition provided by the application is used for etching the copper-molybdenum laminated layer at high pH, and the etching effect is stable.

As is clear from comparative example 1 and example 1, when the pH of the etching solution composition of the prior art was adjusted to the pH range of the present application, damage to IGZO occurred in the case of comparative example 1 containing a fluorine compound, whereas damage to IGZO did not occur in the case of the etching solution composition of the present application at the pH value.

In summary, when the etching solution composition provided by the present application is used to etch a copper-molybdenum stack, the substrate or the active layer 100 is not damaged, the service life of the etching solution composition can be ensured, the production efficiency can be improved, the production cost can be reduced, the multilayer copper-molybdenum stack can be etched entirely without fluorine compounds, and no molybdenum-based film remains.

Referring to fig. 2, the present application further provides a display panel, which includes a substrate and a copper-molybdenum stack portion 200 disposed on the substrate at an interval.

In one embodiment, the acute angle a between the sidewall of the copper molybdenum stack 200 and the substrate is 50-80 degrees. The acute angle a is 66.4820 degrees in this embodiment.

The application provides an etching solution composition, a display panel and a preparation method of the display panel. In the application, the etching solution composition without fluorine is formed by adding carboxylic acid into the etching solution composition, the copper-molybdenum laminated layer is etched by using the etching solution composition, the molybdenum metal layer is not left, the film layer is not damaged by the etching solution composition, and the stability of the etching solution composition is improved.

The etching solution composition, the display panel and the preparation method thereof provided in the embodiments of the present application are described in detail above, and the principles and embodiments of the present application are explained herein by applying specific examples, and the description of the above embodiments is only used to help understanding the method and the core concept of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims

1. The etching solution composition is characterized by comprising hydrogen peroxide, a chelating agent, an auxiliary chelating agent, a corrosion inhibitor, an etchant, a pH regulator and water, wherein the auxiliary chelating agent is carboxylic acid.

2. The etching solution composition according to claim 1, wherein the hydrogen peroxide is 15 to 25 wt%, the chelating agent is 0.5 to 3 wt%, the auxiliary chelating agent is 0.1 to 3 wt%, the corrosion inhibitor is 0.01 to 2 wt%, the etchant is 0.01 to 5 wt%, the pH adjuster is 0.05 to 2 wt%, and the balance is water, based on 100 wt% of the total etching solution composition.

3. The etching solution composition according to claim 1, wherein the weight of the hydrogen peroxide is 19 to 23%, the weight of the chelating agent is 1 to 2%, the weight of the auxiliary chelating agent is 0.5 to 2%, the weight of the corrosion inhibitor is 0.05 to 1%, the weight of the etchant is 0.1 to 0.5%, the weight of the pH adjusting agent is 0.1 to 2%, and the balance is the water, based on 100% of the total weight of the etching solution composition.

4. The etching solution composition according to claim 1, wherein the auxiliary chelating agent is an organic acid having at least one carboxyl group and containing no nitrogen atom.

5. The etching solution composition as claimed in claim 4, wherein the organic acid containing at least one carboxyl group and no nitrogen atom comprises one or more of citric acid, glycolic acid, oxalic acid, malonic acid, valeric acid, propionic acid, fruit acid, gluconic acid and succinic acid.

6. The etching solution composition according to claim 1, wherein the chelating agent is a complex compound, the corrosion inhibitor is an azole compound, the etchant is one or a combination of two of a phosphoric acid compound and a phosphate compound, and the pH adjuster is a compound containing hydroxide ions.

7. The etchant composition of claim 6, wherein the chelating agent comprises iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylnitroacetic acid, aminotri (methylphosphoric acid)), (1-hydroxyethane-1, 1-diene compound) bis (phosphoric acid), ethylenediamine tetra (methylphosphoric acid), diethylenetriaminepenta (methylphosphoric acid), alanine, glutamic acid, aminobutyric acid, and glycine, and the corrosion inhibitor comprises one or more of 3-amino-1, 2, 3-triazole, 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 3-triazole, 4-amino-1, 2, 4-triazole, 5-methyltetrazole, 5-aminotetrazole, The etching agent comprises one or more of phosphoric acid, phosphorous acid, hypophosphorous acid and pyrophosphoric acid, and the pH regulator comprises one or more of potassium hydroxide, sodium hydroxide and ammonium hydroxide.

8. A method for manufacturing a display panel, comprising:

providing a substrate;

forming a copper-molybdenum lamination layer on the substrate;

etching the copper-molybdenum stack with the etchant composition of any one of claims 1 to 7 to form copper-molybdenum stacks disposed at intervals.

9. The display panel is characterized by comprising a substrate and a copper-molybdenum lamination part arranged on the substrate at intervals.

10. The display panel of claim 9, wherein the acute angle between the sidewalls of the copper molybdenum stack and the substrate is 50-80 degrees.