CN114513169B - Broadband low-phase-error variable gain amplifier adopting degeneration inductance technology - Google Patents
Broadband low-phase-error variable gain amplifier adopting degeneration inductance technology Download PDFInfo
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- CN114513169B CN114513169B CN202210030460.3A CN202210030460A CN114513169B CN 114513169 B CN114513169 B CN 114513169B CN 202210030460 A CN202210030460 A CN 202210030460A CN 114513169 B CN114513169 B CN 114513169B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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Abstract
The invention belongs to the field of radio frequency integrated circuits, and particularly provides a 150-170GHz broadband low-phase error variable gain amplifier adopting a degeneration inductance technology, which is used for effectively reducing phase errors among different gain gears and effectively expanding bandwidth. The invention is composed of four variable gain amplifier unit circuits which are cascaded in turn, each variable gain amplifier unit circuit introduces a phase compensation inductance MTL into the intermediate node of a Yu Gong base tube and a common-mode tube on the basis of a current steering type cascode structure, and designs the inductance value (MTL) of the phase compensation inductance MTL N Or MTL P ) So that the front two-stage unit circuit and the rear two-stage unit circuit realize different gain-phase characteristics (reverse conversion or synchronous conversion); finally, phase offset is realized through cascade connection of four-stage unit circuits, namely, phase error is effectively reduced, and the broadband low-phase error variable gain amplifier is realized.
Description
Technical Field
The invention belongs to the field of radio frequency integrated circuits, relates to a Variable Gain Amplifier (VGA), and particularly provides a 150-170GHz broadband low-phase-error variable gain amplifier adopting a degeneration inductance technology.
Background
Millimeter wave band (30-300 GHz) has abundant frequency spectrum resources, can provide required frequency for 5G, and along with the continuous development of process technology and the improvement of transistor performance, circuit structures and design technologies of millimeter wave (mm-wave) frequency bands have been actively researched in the past few years.
In various types of circuit blocks, a Variable Gain Amplifier (VGA) controls transconductance, resulting in gain variation, and plays an important role in various millimeter wave band applications. For example, VGAs are used in beamforming or beamforming systems to reduce gain errors and sidelobe levels; VGA is used in dynamic polarization control systems to control the polarization direction. Recently, with the increasing demand for Gb/s-level high data rate applications, circuit design engineers have developed wideband VGAs of various structures, but how to achieve gain adjustment with low phase error over a wide frequency band remains a major challenge to be solved.
Disclosure of Invention
The invention aims to provide a 150-170GHz Variable Gain Amplifier (VGA) adopting a degeneration inductance technology, which is used for effectively reducing phase errors among different gain gears and effectively expanding bandwidth; the invention adds the phase compensation electric ground structure at the intermediate node of the current rudder type cascode structure to form the unit circuit, and designs the inductance value of the phase compensation inductance to enable the front two-stage unit circuit and the rear two-stage unit circuit to realize different gain-phase characteristics (synchronous conversion or reverse conversion), thereby realizing the phase offset effect through cascade connection of four-stage unit circuits and finally realizing the broadband low-phase error variable gain amplifier.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a broadband low-phase error variable gain amplifier adopting a degeneration inductance technology is characterized by comprising four variable gain amplifier unit circuits which are sequentially cascaded, wherein each variable gain amplifier unit circuit is of a current steering type cam structure, a common base pipe and a middle node of a common-mode pipe in each variable gain amplifier unit circuit are connected with a phase compensation inductance MTL to the ground, and a blocking capacitor C is connected between the inductance MTL and the ground D 。
Further, the inductance value of the phase compensation inductance MTL in the first stage variable gain amplifier unit circuit and the second stage variable gain amplifier unit circuit is MTL N The inductance value of the phase compensation inductance MTL in the third-stage variable gain amplifier unit circuit and the fourth-stage variable gain amplifier unit circuit is MTL P And MTL N With MTL P The method meets the following conditions:
MTL N ＝1/jw(1+α)CB CONV ，MTL P ＝1/jw(1-α)CB CONV ，α＞0；
wherein alpha is a preset constraint condition, CB CONV Can be made intoThe common base and the intermediate node of the common emitter in the variable gain amplifier unit circuit have a capacitance to ground.
Further, the inductance value of the phase compensation inductance MTL in the first stage variable gain amplifier unit circuit and the second stage variable gain amplifier unit circuit is MTL P The inductance value of the phase compensation inductance MTL in the third-stage variable gain amplifier unit circuit and the fourth-stage variable gain amplifier unit circuit is MTL N And MTL N With MTL P The method meets the following conditions:
MTL N ＝1/jw(1+α)CB CONV ，MTL P ＝1/jw(1-α)CB CONV ，α＞0；
wherein alpha is a preset constraint condition, CB CONV Is the capacitance to ground at the intermediate node of the common-base and common-emitter in the variable gain amplifier cell circuit.
Further, the variable gain amplifier unit circuit includes: common base pipe Q 2 And Q is equal to 3 And a common-emitter Q 1 Wherein, the common-emission tube Q 1 The base electrode of the (B) is respectively connected with the front-stage circuit and the bias voltage V through a T-type input matching network bias1 Co-injection tube Q 1 Emitter of (2) is grounded, common base tube Q 2 The collector of (2) is connected with the power supply voltage VDD, the common base tube Q 2 Is connected with the control voltage V ctrl Common base pipe Q 3 The collector electrodes of the power supply voltage VDD and the back-stage circuit are respectively connected with the common base tube Q through a T-shaped output matching network 3 Is connected with bias voltage V bias2 Common base pipe Q 2 And Q is equal to 3 Is connected with the emitter of the common-emitter tube Q 1 Is connected with the collector of the capacitor;
common base pipe Q 2 Base of (d) and control voltage V ctrl Between and common base pipe Q 3 Base of (d) and bias voltage V bias2 Between, T-type input matching network and bias voltage V bias1 The direct current bypass capacitors C are respectively connected between the two capacitors B Common base pipe Q 2 A DC bypass capacitor C is respectively connected between the collector of the power supply voltage VDD and the T-type output matching network and the power supply voltage VDD VDD The T-type input matching network is connected with the front-stage circuitConnected with a blocking capacitor C DC 。
Further, the voltage V in the first stage variable gain amplifier unit circuit and the second stage variable gain amplifier unit circuit ctrl To control voltage V ctrl1 The control voltage V in the third-stage variable gain amplifier unit circuit and the fourth-stage variable gain amplifier unit circuit ctrl To control voltage V ctrl2 The control voltage V is synchronously regulated within a preset range by adopting fixed stepping ctrl1 And control voltage V ctrl2 Gain adjustment of the variable gain amplifier is achieved.
The invention has the beneficial effects that:
the invention provides a 150-170GHz variable gain amplifier adopting a degeneration inductance technology, which consists of four variable gain amplifier unit circuits which are sequentially cascaded, wherein each variable gain amplifier unit circuit introduces a phase compensation inductance MTL into the intermediate node of a Yu Gong base tube and a common-mode tube on the basis of a current steering type cascode structure, and the inductance value of the phase compensation inductance MTL is designed so that the front two-stage unit circuit and the rear two-stage unit circuit realize different gain-phase characteristics: the change trend of the circuit gain and the phase of the first two-stage unit circuit is in opposite characteristics (the inductance value of the phase compensation inductance MTL is MTL N The variable gain amplifier unit circuit is called as an N-type variable gain amplifier unit circuit), and the change trend of the circuit gain and the phase of the two-stage unit circuit are the same (the inductance value of the phase compensation inductance MTL is MTL) P A variable gain amplifier unit circuit called "P") or the trend of change of the circuit gain and phase of the first two-stage unit circuit is the same characteristic, and the trend of change of the circuit gain and phase of the second two-stage unit circuit is opposite; finally, phase offset is realized through cascade connection of four-stage unit circuits, namely, phase error is effectively reduced, and a broadband low-phase error variable gain amplifier is realized; compared with the traditional design of adding a negative feedback inductor or resistor at the source electrode of the common source tube, the invention has smaller gain sacrifice on the unit circuit, and has the advantages of simple structure, small occupation area of the additional inductor and no influence on the input matching of the variable gain amplifier.
Drawings
Fig. 1 is a block diagram of a wideband low phase error variable gain amplifier employing degeneration inductance techniques and interstage matching conditions of the present invention.
Fig. 2 is a single-stage circuit diagram of a wideband low phase error variable gain amplifier employing degeneration inductance techniques in accordance with the present invention.
Fig. 3 is a schematic diagram of a small signal circuit of a wideband low phase error variable gain amplifier employing degeneration inductance techniques in accordance with the present invention.
Fig. 4 is an overall circuit diagram of a wideband low phase error variable gain amplifier employing degeneration inductance techniques in accordance with the present invention.
Fig. 5 is a simulation result of all gain stages of the wideband low-phase error variable gain amplifier according to the embodiment of the present invention.
Fig. 6 is a simulation result of phase errors of all gain stages of the wideband low-phase error variable gain amplifier according to the embodiment of the present invention.
Detailed Description
The invention will be described in further detail with reference to the drawings and examples.
The embodiment provides a 150-170GHz broadband low-phase-error variable gain amplifier adopting a degeneration inductance technology, wherein the circuit structure of the variable gain amplifier is shown in figure 1 and consists of four variable gain amplifier unit circuits which are sequentially cascaded; each variable gain amplifier unit circuit has a current steering type cascode structure, and the core part is composed of two common-base tubes Q as shown in FIG. 2 2 、Q 3 And a common-emitter Q 1 Is composed of a common-emitter tube Q 1 The base electrode of the (a) is connected with a T-shaped input matching network, and the tail end of the input matching network is: MTL 2 Connected to the base, MTL 1 A blocking capacitor C is connected between the circuit and the front-stage circuit DC 、MTL 3 With bias voltage V bias1 Indirect DC bypass capacitor C VDD Co-injection tube Q 1 Is grounded; common base pipe Q 2 To draw current path, common base tube Q 2 Is connected directly to the power supply voltage VDD without load at the collector terminal, and is connected to the direct current bypass capacitor C between the collector and the power supply voltage VDD Common base pipe Q 2 Through the DC bypass capacitor C B With adjustable control voltage V ctrl Are connected; common base pipe Q 3 The collector electrode of the power supply voltage VDD is connected with a T-shaped output matching network and then is respectively cascaded with the power supply voltage VDD and a later-stage circuit, and the tail end of the T-shaped output matching network is as follows: MTL 4 Connected to the collector, MTL 5 Direct current bypass capacitor C connected between the capacitor and power supply voltage VDD 、MTL 6 Is connected with a post-stage circuit and a common base tube Q 3 Through the DC bypass capacitor C B With a fixed bias voltage V bias2 Are connected; common base pipe Q 2 、Q 3 Is connected with the emitter of the common-emitter tube Q 1 The collector of the common-base tube is connected with the intermediate node connected with the common-base tube, the inductor MTL is connected with the ground, and a blocking capacitor C is connected between the inductor MTL and the ground D 。
In terms of the working principle of the device,
as shown in fig. 1, the block diagram and the inter-stage matching condition applied to a Variable Gain Amplifier (VGA) of 150-170GHz in the present embodiment are shown, and four-stage circuits matched at different center frequencies are cascaded (trigger-tuning), so that broadband gain modulation characteristics are realized, and 3dB bandwidth is optimized; the four-stage circuit has the same structure, as shown in fig. 2, and the circuit characteristics are different according to the difference of the MTL values, and the MTL inductances are respectively marked as MTLs correspondingly N And MTL P As shown in fig. 4, the first two stages of the circuit are N-type variable gain amplifier units, the change trend of the circuit gain and the phase is of opposite characteristics, the second two stages are P-type variable gain amplifier units, the change trend of the circuit gain and the phase is of the same characteristics, and phase cancellation in a wider frequency band range is realized through cascading.
More specifically: as shown in fig. 2, the circuit structure of the single-stage variable gain amplifier unit of the present invention is based on the current steering circuit structure in the common base tube Q 2 、Q 3 And a common-emitter tube Q 1 The intermediate node of the circuit is introduced with an inductance MTL to the ground, so that the total capacitance of the node under a small signal model is reduced, the input-output transfer function of the circuit is changed, and the design and adjustment of gain-phase characteristics are finally realized; fig. 3 is a small-signal equivalent circuit diagram of the single-stage variable gain amplifier unit of fig. 2, wherein,the capacitance to ground seen at node_x is: CB (CB) CONV =cgd1+cds1+cds2+cgs2+cds3+cgs3, cgd1 is the common-emitter Q 1 Parasitic capacitance of gate and drain of (1) and Cds1 is a common-emitter Q 1 Drain-source parasitic capacitance of (1) and Cds2 are common base pipe Q 2 Is the common base pipe Q, cgs2 2 Is a common base tube Q with gate-source parasitic capacitance and Cds3 3 Is the common base pipe Q, cgs3, drain-source parasitic capacitance 3 Gate-source parasitic capacitance of (B) when sharing the base tube Q 2 、Q 3 And a common-emitter tube Q 1 After the (transistor) dimensions are determined, the parasitic capacitance of each transistor is determined, and the capacitance to ground CB seen at node_X CONV And then determining; in the invention, the inductance value of the inductance MTL introduced by the node_X Node is designed to respectively meet the following conditions:
MTL N ＝1/jw(1+α)CB CONV ，MTL P ＝1/jw(1-α)CB CONV ，α＞0；
wherein alpha is a preset constraint condition, j represents an imaginary part, and w is a working frequency;
so that the gain-phase respectively exhibit synchronous transformation (MTL) P ) And reverse transformation (MTL) N ) Under the constraint condition of alpha value, the absolute value of the partial derivative of G/phi is the same; namely, an N-type variable gain amplifier unit and a P-type variable gain amplifier unit are formed; gain-phase respectively exhibiting synchronous transformation (MTL) P ) And reverse transformation (MTL) N ) Post-synthesis (the absolute value of the offset of G/phi is the same), is understood to be "overcompensation" and "undercompensation" of the junction capacitance.
Further, the fixed bias of the circuit has a power supply voltage VDD and a common-emitter bias voltage V bias1 Bias voltage V of common base pipe bias2 With adjustable bias having a control voltage V ctrl (V ctrl1 /V ctrl2 ) By adjusting V in steps and ranges ctrl The current on output tube Q3 can be varied to vary the gain and deliver the signal to the output of the subsequent stage via the T-type output matching network.
Based on the variable gain amplifier unit, the present embodiment accomplishes a four-stage architecture variable based on SiGe processingAs shown in fig. 4, in each single-stage variable gain amplifier unit, the parameters except the inductance value of the MTL inductor are the same; common base pipe Q 2 、Q 3 And a common-emitter tube Q 1 All adopt bipolar junction transistors with the size of m=3, and the adopted degeneration inductance MTL P /MTL N A blocking capacitor C realized by GCPW with characteristic impedance of 50 ohms and length of 90u/70u respectively DC The value of (C) is 30fF, and the blocking capacitance is C D The value of (C) is 60fF, and the DC bypass capacitor C B The value of (C) is more than 100fF, and the DC bypass capacitor C VDD The value of (2) is more than 150fF, the bias resistance is of the order of KΩ, the power supply voltage VDD=2.25V, the bias voltage V bias1 ＝0.9V、V bias2 =2.25v; control voltage V ctrl1 Increasing from 1.835V to 1.91V in 0.005V steps ctrl2 The voltage is synchronously changed from 1.655V to 1.73V in 0.005V steps, so that the adjustment of different gain gears is realized.
Finally, the embodiment realizes broadband gain adjustment at 150-170GHz, the gain adjustment range is 8dB, the step is 0.5dB, the total is 4 bits (16 gain states), as shown in fig. 5, the corresponding control codes 1111-0000 are shown, and the gain is sequentially reduced; the phase error is less than 2 ° over the entire wideband range, as shown in fig. 6.
While the invention has been described in terms of specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.
Claims (3)
1. A broadband low-phase error variable gain amplifier adopting degeneration inductance technology is characterized in that the variable gain amplifier is composed of four variable gain amplifier unit circuits which are cascaded in turn, wherein each variable gain amplifier unit circuit is of a current steering type cascode structure, a common base tube and a middle node of a common emitter tube in each variable gain amplifier unit circuit are connected with a phase compensation inductance MTL to the ground,a blocking capacitor C is connected between the inductance MTL and the ground D ；
The inductance value of the phase compensation inductance MTL in the first-stage variable gain amplifier unit circuit and the second-stage variable gain amplifier unit circuit is MTL N The inductance value of the phase compensation inductance MTL in the third-stage variable gain amplifier unit circuit and the fourth-stage variable gain amplifier unit circuit is MTL P The method comprises the steps of carrying out a first treatment on the surface of the Alternatively, the inductance value of the phase compensation inductance MTL in the first-stage variable gain amplifier unit circuit and the second-stage variable gain amplifier unit circuit is MTL P The inductance value of the phase compensation inductance MTL in the third-stage variable gain amplifier unit circuit and the fourth-stage variable gain amplifier unit circuit is MTL N ；
And MTL N With MTL P The method meets the following conditions:
MTL N =1/[jw(1+α) CB CONV ]，MTL P =1/[jw(1-α) CB CONV ]，α＞0；
wherein alpha is a preset constraint condition,jrepresents the imaginary part, w is the working frequency, CB CONV Is the capacitance to ground at the intermediate node of the common-base and common-emitter in the variable gain amplifier cell circuit.
2. The wideband low phase error variable gain amplifier of claim 1, wherein the variable gain amplifier cell circuit comprises: common base pipe Q 2 And Q is equal to 3 And a common-emitter Q 1 Wherein, the common-emission tube Q 1 The base electrode of the (B) is respectively connected with the front-stage circuit and the bias voltage V through a T-type input matching network bias1 Co-injection tube Q 1 Emitter of (2) is grounded, common base tube Q 2 The collector of (2) is connected with the power supply voltage VDD, the common base tube Q 2 Is connected with the control voltage V ctrl Common base pipe Q 3 The collector electrodes of the power supply voltage VDD and the back-stage circuit are respectively connected with the common base tube Q through a T-shaped output matching network 3 Is connected with bias voltage V bias2 Common base pipe Q 2 And Q is equal to 3 Is connected with the emitter of the common-emitter tube Q 1 Is connected with the collector of the capacitor;
common base pipe Q 2 Base of (d) and control voltage V ctrl Between and common base pipe Q 3 Base of (d) and bias voltage V bias2 Between, T-type input matching network and bias voltage V bias1 The direct current bypass capacitors C are respectively connected between the two capacitors B Common base pipe Q 2 A DC bypass capacitor C is respectively connected between the collector of the power supply voltage VDD and the T-type output matching network and the power supply voltage VDD VDD A blocking capacitor C is connected between the T-shaped input matching network and the front-stage circuit DC 。
3. A wideband low phase error variable gain amplifier employing degeneration inductance technique as set forth in claim 1,
the control voltage V in the first-stage variable gain amplifier unit circuit and the second-stage variable gain amplifier unit circuit ctrl To control voltage V ctrl1 The control voltage V in the third-stage variable gain amplifier unit circuit and the fourth-stage variable gain amplifier unit circuit ctrl To control voltage V ctrl2 The control voltage V is synchronously regulated within a preset range by adopting fixed stepping ctrl1 And control voltage V ctrl2 Gain adjustment of the variable gain amplifier is achieved.
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| KR102133926B1 (en) * | 2018-11-07 | 2020-07-15 | 한국과학기술원 | Wideband Variable Gain Amplifier with Low Phase Variation |
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