CN114513169A - Broadband low-phase error variable gain amplifier adopting degeneration inductance technology - Google Patents
Broadband low-phase error variable gain amplifier adopting degeneration inductance technology Download PDFInfo
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- H—ELECTRICITY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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Abstract
The invention belongs to the field of radio frequency integrated circuits, and particularly provides a 150-plus-170 GHz broadband low-phase error variable gain amplifier adopting a degeneration inductance technology, which is used for effectively reducing phase errors among different gain gears and effectively expanding the bandwidth. The invention is composed of four variable gain amplifier unit circuits which are cascaded in sequence, each variable gain amplifier unit circuit introduces a phase compensation inductor MTL at the middle node of a common base tube and a common emitter tube on the basis of a current rudder type cascode structure, and the inductance value (MTL) of the phase compensation inductor MTL is designedNOr MTLP) So that the former two-stage unit circuit and the latter two-stage unit circuit realize different gain-phase characteristicsSex (inverse transform or synchronous transform); finally, phase cancellation is achieved through cascade connection of four-level unit circuits, namely phase errors are effectively reduced, and the broadband low-phase-error variable gain amplifier is achieved.
Description
Technical Field
The invention belongs to the field of radio frequency integrated circuits, relates to a Variable Gain Amplifier (VGA), and particularly provides a 150-plus-170 GHz broadband low-phase error variable gain amplifier adopting a degeneration inductance technology.
Background
The millimeter wave band (30-300GHz) has abundant spectrum resources, can provide required frequency for 5G, and with the continuous development of process technology and the improvement of transistor performance, people have been actively researching circuit structure and design technology of millimeter-wave (mm-wave) frequency band in the last few years.
In various types of circuit modules, a Variable Gain Amplifier (VGA) controls transconductance, resulting in gain variation, and plays an important role in various millimeter wave band applications. For example, VGAs are used in beamforming or beamforming systems to reduce gain errors and side lobe levels; the VGA is used in dynamic polarization control systems to control the polarization direction. Recently, as the demand for Gb/s level high data rate applications increases, circuit design engineers have developed wideband VGAs with various structures, but how to achieve low phase error gain adjustment in a wide frequency band is still a big problem to be solved.
Disclosure of Invention
The invention aims to provide a 150-plus-170 GHz Variable Gain Amplifier (VGA) adopting a degeneration inductance technology, which is used for effectively reducing phase errors among different gain gears and effectively expanding the bandwidth; according to the invention, a phase compensation inductance and ground structure is added at the middle node of the current rudder type cascode structure to form a unit circuit, and different gain-phase characteristics (synchronous transformation or reverse transformation) are realized by the front two-stage unit circuit and the rear two-stage unit circuit by designing the inductance value of the phase compensation inductance, so that the effect of phase cancellation is realized by the cascade connection of four-stage unit circuits, and finally, the broadband low-phase-error variable gain amplifier is realized.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a broadband low-phase error variable gain amplifier adopting a degeneration inductance technology is characterized by comprising four sequentially cascaded variable gain amplifier unit circuits, wherein each variable gain amplifier unit circuit is of a current rudder type cascode structure, a phase compensation inductor MTL is connected to the ground at a middle node of a common base tube and a common emitter tube in each variable gain amplifier unit circuit, and a blocking capacitor C is connected between the inductor MTL and the groundD。
Further, the first stage is variableThe inductance value of the phase compensation inductor MTL in the gain amplifier unit circuit and the second stage variable gain amplifier unit circuit is MTLNThe inductance value of the phase compensation inductor MTL in the third stage variable gain amplifier unit circuit and the fourth stage variable gain amplifier unit circuit is MTLPAnd MTLNAnd MTLPSatisfies the following conditions:
MTLN＝1/jw(1+α)CBCONV，MTLP＝1/jw(1-α)CBCONV，α＞0；
wherein alpha is a preset constraint condition, CBCONVIs the capacitance to ground at the intermediate node of the common base tube and the common emitter tube in the variable gain amplifier unit circuit.
Furthermore, the inductance value of the phase compensation inductor MTL in the first stage variable gain amplifier unit circuit and the second stage variable gain amplifier unit circuit is MTLPThe inductance value of the phase compensation inductor MTL in the third stage variable gain amplifier unit circuit and the fourth stage variable gain amplifier unit circuit is MTLNAnd MTLNAnd MTLPSatisfies the following conditions:
MTLN＝1/jw(1+α)CBCONV，MTLP＝1/jw(1-α)CBCONV，α＞0；
wherein alpha is a preset constraint condition, CBCONVIs the capacitance to ground at the intermediate node of the common base tube and the common emitter tube in the variable gain amplifier unit circuit.
Further, the variable gain amplifier cell circuit includes: common base pipe Q2And Q3And a common emitter Q1Wherein, a common emitter tube Q1The base electrode is respectively connected with the front stage circuit and the bias voltage V through a T-shaped input matching networkbias1Co-injection tube Q1Is grounded and is a common base tube Q2The collector of the transistor is connected with a power supply voltage VDD and is a common base transistor Q2Is connected to a control voltage VctrlBasic tube Q3The collector is respectively connected with a power supply voltage VDD and a post-stage circuit through a T-shaped output matching network, and a common base tube Q3Base connection bias voltage Vbias2Basic tube Q2And Q3Is connected to the emitterRear and common emission tube Q1The collector electrodes are connected;
common base pipe Q2Base and control voltage VctrlNormal and common base pipe Q3Base and bias voltage Vbias2And T-type input matching network and bias voltage Vbias1Between which are respectively connected with a DC bypass capacitor CBBasic tube Q2The direct current bypass capacitors C are respectively connected between the collector and the power supply voltage VDD and between the T-shaped output matching network and the power supply voltage VDDVDDA DC blocking capacitor C is connected between the T-type input matching network and the preceding stage circuitDC。
Furthermore, the control voltage V in the first stage variable gain amplifier unit circuit and the second stage variable gain amplifier unit circuitctrlTo control the voltage Vctrl1The control voltage V in the third stage variable gain amplifier unit circuit and the fourth stage variable gain amplifier unit circuitctrlTo control the voltage Vctrl2Synchronously regulating the control voltage V within a predetermined range by fixed stepsctrl1And a control voltage Vctrl2And realizing the gain adjustment of the variable gain amplifier.
The invention has the beneficial effects that:
the invention provides a 150-plus 170GHz variable gain amplifier adopting a degeneration inductance technology, which is formed by four sequentially cascaded variable gain amplifier unit circuits, wherein each variable gain amplifier unit circuit introduces a phase compensation inductance MTL at the middle node of a common base tube and a common emitter tube on the basis of a current rudder type cascode structure, and the front two-stage unit circuit and the rear two-stage unit circuit realize different gain-phase characteristics by designing the inductance value of the phase compensation inductance MTL: the circuit gain and phase of the first two-stage unit circuit have opposite change trend (the inductance value of the phase compensation inductor MTL is MTL)NReferred to as "N" type variable gain amplifier unit circuit), the circuit gain and phase of the latter two-stage unit circuit have the same change trend (the inductance value of the phase compensation inductance MTL is MTL)PReferred to as "P" type variable gain amplifier cell circuit), or of the first two stages of cell circuitsThe change trends of the circuit gain and the phase are in the same characteristic, and the change trends of the circuit gain and the phase of the two-stage unit circuit are in the opposite characteristic; finally, phase cancellation is achieved through cascade connection of four stages of unit circuits, namely, phase errors are effectively reduced, and a broadband low-phase-error variable gain amplifier is achieved; compared with the traditional design of adding a negative feedback inductor or resistor to the source electrode of the common source tube, the gain sacrifice on the unit circuit is small, and meanwhile, the variable gain amplifier is simple in structure, small in occupied area of the additional inductor and free of influence on input matching of the variable gain amplifier.
Drawings
Fig. 1 is a block diagram of a wideband low phase error variable gain amplifier using degeneration inductance technology and interstage matching conditions according to the present invention.
Fig. 2 is a single stage circuit diagram of a wideband low phase error variable gain amplifier employing degeneration inductance technology according to the present invention.
Fig. 3 is a schematic diagram of a small signal circuit of a wideband low phase error variable gain amplifier using degeneration inductance technology according to the present invention.
Fig. 4 is an overall circuit diagram of the wide-band low-phase error variable gain amplifier of the present invention using degeneration inductance technology.
Fig. 5 is a simulation result of all gain stages of the wideband low phase error variable gain amplifier according to the embodiment of the present invention.
Fig. 6 is a simulation result of phase errors of all gain stages of the wideband low phase error variable gain amplifier according to the embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The present embodiment provides a 150-170GHz broadband low phase error variable gain amplifier using degeneration inductance technology, whose circuit structure is shown in fig. 1 and is composed of four variable gain amplifier unit circuits cascaded in sequence; each variable gain amplifier unit circuit is of a current steering type cascode structure, and specifically, as shown in fig. 2, a core part is composed of two common base pipes Q2、Q3And a common emitter Q1In which a common emitter tube Q1The base of the T-shaped input matching network is connected with the tail end of the input matching network: MTL2Connected to the base, MTL1A DC blocking capacitor C is connected between the front stage circuit and the DC blocking capacitor CDC、MTL3And a bias voltage Vbias1Inter-connected DC bypass capacitor CVDDCo-injection tube Q1The transmitter of (a) is grounded; common base pipe Q2For drawing current paths, common base transistor Q2Has a collector terminal which is idle and is directly connected to a supply voltage VDD, and a direct current bypass capacitor C between the collector terminal and the supply voltageVDDBasic tube Q2The base electrode of the capacitor passes through a direct current bypass capacitor CBAnd an adjustable control voltage VctrlConnecting; common base pipe Q3The collector is respectively cascaded with a power supply voltage VDD and a post-stage circuit after being connected with a T-shaped output matching network, and the tail end of the T-shaped output matching network is as follows: MTL4Connected to the collector electrode, MTL5A DC bypass capacitor C connected to the power supply voltageVDD、MTL6Connected to a subsequent circuit, common base Q3The base electrode of the capacitor passes through a direct current bypass capacitor CBWith a fixed bias voltage Vbias2Connecting; common base pipe Q2、Q3Is connected with a common emitter tube Q1The collector of the common base tube is connected with the intermediate node of the common base tube and the common emitter tube, the intermediate node of the common base tube and the common emitter tube is connected with an inductor MTL to the ground, and a DC blocking capacitor C is connected between the inductor MTL and the groundD。
In terms of the working principle, the utility model,
as shown in fig. 1, a block diagram of a Variable Gain Amplifier (VGA) applied to 150-; the four-stage circuits have the same structure, as shown in fig. 2, and the circuit characteristics are different according to the different values of the MTL, and accordingly, the MTL inductors are respectively denoted as MTLNAnd MTLPAs shown in fig. 4, the first two stages of the circuit are N-type variable gain amplifier units, the variation tendencies of the gain and the phase of the circuit are opposite, the second two stages of the circuit are P-type variable gain amplifier units, the variation tendencies of the gain and the phase of the circuit are the same, and the phase in a wide frequency band is realized by cascadingAnd (4) counteracting.
More specifically: FIG. 2 shows a circuit configuration of a single-stage variable gain amplifier unit according to the present invention, which is based on a current-steering circuit configuration, in a common-base transistor Q2、Q3And a common emitter Q1The intermediate node introduces an inductance MTL to the ground, and the total capacitance of the node under a small signal model is reduced, so that the input-output transfer function of the circuit is changed, and the design and adjustment of the gain-phase characteristic are finally realized; fig. 3 is a small-signal equivalent circuit diagram of the single-stage variable gain amplifier unit in fig. 2, wherein the capacitance to ground seen at Node _ X is: CB (CB)CONVCgd1+ Cds1+ Cds2+ Cgs2+ Cds3+ Cgs3, Cgd1 is a common-injection tube Q1The parasitic capacitance of the gate and the drain, CdS1, are a common emitter Q1The drain-source parasitic capacitance and Cds2 are common base tube Q2The drain-source parasitic capacitance, Cgs2, is a common base tube Q2The gate-source parasitic capacitance and Cds3 are common base tube Q3The drain-source parasitic capacitance, Cgs3, is a common base tube Q3As a common base tube Q2、Q3And a common emitter Q1After the (transistors) are determined, the parasitic capacitance of each transistor is determined, and the capacitance to ground CB seen at the Node _ X Node is determinedCONVAnd then also determined; in the invention, the inductance value of the inductor MTL introduced by the Node _ X Node is designed to respectively meet the following requirements:
MTLN＝1/jw(1+α)CBCONV，MTLP＝1/jw(1-α)CBCONV，α＞0；
wherein, alpha is a preset constraint condition, j represents an imaginary part, and w is a working frequency;
so that the gain-phase respectively exhibits synchronous transitions (MTL)P) And reverse transformation (MTL)N) And under the constraint condition of alpha value, the same absolute value of partial derivatives of G/phi is realized; namely, an N-type variable gain amplifier unit and a P-type variable gain amplifier unit are formed; gain-phase respectively present synchronous transitions (MTL)P) And reverse transformation (MTL)N) And then synthesized (the absolute values of the partial derivatives of G/phi are the same), which is understood as "overcompensation" and "undercompensation" of the junction capacitance.
Furthermore, the fixed bias of the circuit is provided with a power supply voltage VDD and a common emitter bias voltage Vbias1Common base tube bias voltage Vbias2Adjustable biased with a control voltage Vctrl(Vctrl1/Vctrl2) By adjusting V in steps and rangesctrlThe current on the output tube Q3 can be varied to change the gain and pass the signal through the T-type output matching network to the subsequent stage circuit output.
Based on the variable gain amplifier unit, the present embodiment completes a four-stage structure variable gain amplifier based on the SiGe process, as shown in fig. 4, in each single-stage variable gain amplifier unit, the parameters except the inductance value of the MTL inductor are the same; common base pipe Q2、Q3And a common emitter Q1A degeneration inductor MTL with the size of m 3 and adopting bipolar junction transistorsP/MTLNRealized by GCPW with characteristic impedance of 50 ohms, the length of the GCPW is 90u/70u respectively, and a blocking capacitor CDCHas a value of 30fF and a blocking capacitance CDIs 60fF, and a DC bypass capacitor CBIs more than 100fF, and a direct current bypass capacitor CVDDIs 150fF or more, the bias resistance is in the order of K omega, the power supply voltage VDD is 2.25V, and the bias voltage V isbias1＝0.9V、Vbias22.25V; control voltage Vctrl1Increasing from 1.835V to 1.91V, V in steps of 0.005Vctrl2The two control voltages are synchronously changed by increasing the voltage from 1.655V to 1.73V in steps of 0.005V, so that the adjustment of different gain gears is realized.
Finally, the present embodiment realizes the wideband gain adjustment at 150-; the phase error is less than 2 deg. over the entire wide frequency band as shown in fig. 6.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (5)
1. A broadband low-phase error variable gain amplifier adopting a degeneration inductance technology is characterized by comprising four sequentially cascaded variable gain amplifier unit circuits, wherein each variable gain amplifier unit circuit is of a current rudder type cascode structure, a phase compensation inductor MTL is connected to the ground at a middle node of a common base tube and a common emitter tube in each variable gain amplifier unit circuit, and a blocking capacitor C is connected between the inductor MTL and the groundD。
2. The wide-band low-phase-error variable gain amplifier using degeneration inductor technique as claimed in claim 1, wherein the inductance value of the phase compensation inductor MTL in the first stage variable gain amplifier unit circuit and the second stage variable gain amplifier unit circuit is MTLNThe inductance value of the phase compensation inductor MTL in the third stage variable gain amplifier unit circuit and the fourth stage variable gain amplifier unit circuit is MTLPAnd MTLNAnd MTLPSatisfies the following conditions:
MTLN＝1/jw(1+α)CBCONV，MTLP＝1/jw(1-α)CBCONV，α＞0；
wherein alpha is a preset constraint condition, CBCONVIs the capacitance to ground at the intermediate node of the common base tube and the common emitter tube in the variable gain amplifier unit circuit.
3. The wide-band low-phase-error variable gain amplifier using degeneration inductor technique as claimed in claim 1, wherein the inductance value of the phase compensation inductor MTL in the first stage variable gain amplifier unit circuit and the second stage variable gain amplifier unit circuit is MTLPThe inductance value of the phase compensation inductor MTL in the third stage variable gain amplifier unit circuit and the fourth stage variable gain amplifier unit circuit is MTLNAnd MTLNAnd MTLPSatisfies the following conditions:
MTLN＝1/jw(1+α)CBCONV，MTLP＝1/jw(1-α)CBCONV，α＞0；
wherein alpha is a preset constraint condition, CBCONVIs the capacitance to ground at the intermediate node of the common base tube and the common emitter in the variable gain amplifier unit circuit.
4. A wideband low phase error variable gain amplifier employing degeneration inductance technology as defined in claim 1, wherein the variable gain amplifier cell circuit comprises: common base pipe Q2And Q3And a common emitter Q1Wherein, a common emitter tube Q1The base electrode is respectively connected with the front stage circuit and the bias voltage V through a T-shaped input matching networkbias1Co-injection tube Q1Is grounded and is a common base tube Q2The collector of the transistor is connected with a power supply voltage VDD and is a common base transistor Q2Is connected to a control voltage VctrlBasic tube Q3The collector is respectively connected with a power supply voltage VDD and a post-stage circuit through a T-shaped output matching network, and a common base tube Q3Base connection bias voltage Vbias2Basic tube Q2And Q3Is connected with a common emitter tube Q1The collector electrodes are connected;
common base pipe Q2Base and control voltage V ofctrlNormal and common base pipe Q3Base and bias voltage Vbias2And T-type input matching network and bias voltage Vbias1Between which are respectively connected with a DC bypass capacitor CBBasic tube Q2The direct current bypass capacitors C are respectively connected between the collector and the power supply voltage VDD and between the T-shaped output matching network and the power supply voltage VDDVDDA DC blocking capacitor C is connected between the T-type input matching network and the preceding stage circuitDC。
5. The wide-band low-phase-error variable gain amplifier using degeneration inductance technology according to claim 1, wherein said control voltage V in said first stage variable gain amplifier unit circuit and said second stage variable gain amplifier unit circuitctrlTo control the voltage Vctrl1The control voltage V in the third stage variable gain amplifier unit circuit and the fourth stage variable gain amplifier unit circuitctrlTo control the voltage Vctrl2Synchronously regulating the control voltage V within a predetermined range by fixed stepsctrl1And a control voltage Vctrl2And realizing the gain adjustment of the variable gain amplifier.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106921346A (en) * | 2017-03-01 | 2017-07-04 | 成都通量科技有限公司 | High linearity wide band upper frequency mixer |
| US20200144978A1 (en) * | 2018-11-07 | 2020-05-07 | Korea Advanced Institute Of Science And Technology | Wideband variable gain amplifier with low phase variation |
| CN112311340A (en) * | 2020-11-06 | 2021-02-02 | 南京迈矽科微电子科技有限公司 | Millimeter wave variable gain power amplifier based on switch capacitor array regulation |
| CN112865734A (en) * | 2019-11-27 | 2021-05-28 | 深圳市中兴微电子技术有限公司 | Variable gain amplifier and equipment |
| CN113162647A (en) * | 2021-03-16 | 2021-07-23 | 复旦大学 | Broadband multifunctional transceiving component in phased array system |
| CN113346847A (en) * | 2021-06-17 | 2021-09-03 | 西安电子科技大学重庆集成电路创新研究院 | High linearity variable gain amplifier |
| CN113424442A (en) * | 2019-02-27 | 2021-09-21 | 华为技术有限公司 | Variable gain amplifier |
-
2022
- 2022-01-12 CN CN202210030460.3A patent/CN114513169B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106921346A (en) * | 2017-03-01 | 2017-07-04 | 成都通量科技有限公司 | High linearity wide band upper frequency mixer |
| US20200144978A1 (en) * | 2018-11-07 | 2020-05-07 | Korea Advanced Institute Of Science And Technology | Wideband variable gain amplifier with low phase variation |
| CN113424442A (en) * | 2019-02-27 | 2021-09-21 | 华为技术有限公司 | Variable gain amplifier |
| CN112865734A (en) * | 2019-11-27 | 2021-05-28 | 深圳市中兴微电子技术有限公司 | Variable gain amplifier and equipment |
| CN112311340A (en) * | 2020-11-06 | 2021-02-02 | 南京迈矽科微电子科技有限公司 | Millimeter wave variable gain power amplifier based on switch capacitor array regulation |
| CN113162647A (en) * | 2021-03-16 | 2021-07-23 | 复旦大学 | Broadband multifunctional transceiving component in phased array system |
| CN113346847A (en) * | 2021-06-17 | 2021-09-03 | 西安电子科技大学重庆集成电路创新研究院 | High linearity variable gain amplifier |
Non-Patent Citations (1)
| Title |
|---|
| TURKMEN E等: "A SiGe HBT D-band LNA with butterworth response and noise reduction technique", vol. 28, no. 6, pages 524 * |
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