CN114497339A - SiGe thermoelectric device for space reactor thermoelectric power supply and preparation thereof - Google Patents
SiGe thermoelectric device for space reactor thermoelectric power supply and preparation thereof Download PDFInfo
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- CN114497339A CN114497339A CN202111594734.3A CN202111594734A CN114497339A CN 114497339 A CN114497339 A CN 114497339A CN 202111594734 A CN202111594734 A CN 202111594734A CN 114497339 A CN114497339 A CN 114497339A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
Abstract
The invention discloses a SiGe thermoelectric device for a space reactor thermoelectric power supply and a preparation method thereof, wherein the thermoelectric device is in a sandwich structure and comprises: the thermocouple comprises an insulating plate, a conducting layer, a plurality of thermocouple arms and a heat insulation layer, wherein the insulating plate is arranged on the outer layer of the thermoelectric device in parallel, the conducting layer is arranged on the inner side of the insulating plate in parallel, the transition layer is arranged on the inner side of the conducting layer in parallel, and the thermocouple arms and the heat insulation layer are arranged between the two transition layers; the method utilizes a diffusion welding method to weld the thermocouple arm and the electrode graphite layer. The SiGe thermoelectric device provided by the invention can resist a high-temperature environment and has a compact structure, the electrodes at two ends and the galvanic couple material are connected by using a diffusion welding method, so that the high use temperature of the cold end and the hot end of the prepared thermoelectric device is ensured, and the SiGe thermoelectric device provided by the invention can be used for a space stack thermoelectric power supply.
Description
Technical Field
The invention belongs to the field of thermoelectric devices, and particularly relates to a SiGe thermoelectric device for a space stack thermoelectric power supply and preparation thereof.
Background
In a deep space detection task, the space reactor temperature difference power supply becomes one of ideal power supplies of a deep space detector due to the advantages of strong environmental adaptability, no vibration, long service life and the like. The thermoelectric device is an energy conversion device which converts thermal energy generated by a reactor and conducted by a heat pipe into electric energy by utilizing the Seebeck effect, has the advantages of static state, no vibration, no maintenance, high reliability, long service life and the like, and is a core component of a space reactor thermoelectric power supply. Because the temperature of the space stack thermoelectric power supply is higher, a thermoelectric device used for the space stack thermoelectric power supply also needs to be a high-temperature thermoelectric device, the temperature of the hot end of the thermoelectric device, which is in contact with a heat pipe of the space stack thermoelectric power supply, is required to be up to 800-1000 ℃, and the temperature of the cold end of the thermoelectric device is also required to be up to more than 400 ℃.
The SiGe thermoelectric device is one of the high-temperature thermoelectric devices with the highest maturity and the most excellent performance in the prior art, and although the material can be suitable for the high temperature of 1000 ℃, the thermal stability of the interface between the SiGe material and an electrode and the use temperature of the device are influenced by the device preparation process. The current main preparation method of the SiGe thermoelectric device comprises the following steps: the applicable temperature of the cold end and the hot end of the SiGe thermoelectric device prepared by the direct electrode brazing method is lower than 800 ℃, the SiGe thermoelectric device is obviously not suitable for a space reactor thermoelectric power supply, and if the SiGe thermoelectric device is used in the space reactor thermoelectric power supply for a long time, the device can generate serious interface reaction to cause desoldering and fracture of the electrode and SiGe; the SiGe thermoelectric device is prepared by a hot end diffusion welding-cold end brazing method, and the problems of complex process, non-compact structure and low applicable temperature of the cold end exist, so that the SiGe thermoelectric device is not suitable for a space stack temperature difference power supply; the SiGe thermoelectric device is prepared by a method of preparing a transition layer on the surface of SiGe and then brazing an electrode, so that the interface component of the prepared thermoelectric device is complex, the thermal stability is to be verified, a thermal insulation material needs to be additionally filled between couple arms, the structure of the device is not compact, and obviously, the thermoelectric device prepared by the method cannot be used for a space stack thermoelectric power supply at about 1000 ℃ or has an improved space due to the unsatisfactory high-temperature thermal stability or the non-compact structure.
Therefore, a new SiGe thermoelectric device for a space stack thermoelectric power supply and a preparation method thereof are needed, and the SiGe thermoelectric device prepared by the method has a compact structure and high temperature adaptability, and can be used for the space stack thermoelectric power supply.
Disclosure of Invention
In view of this, the invention provides a SiGe thermoelectric device for a space stack thermoelectric power supply and a preparation method thereof, and the SiGe thermoelectric device prepared by the method has a compact structure and high temperature adaptability, and can be used for a space stack thermoelectric power supply.
In order to achieve the purpose, the invention adopts the following technical scheme: a SiGe thermoelectric device for a space stack thermoelectric power supply, the thermoelectric device being of a sandwich structure comprising: the thermocouple comprises two insulating plates, two conducting layers, a plurality of thermocouple arms, a heat insulation layer, a plurality of thermocouple arms and a plurality of thermoelectric element heat insulation layers, wherein the two insulating plates are arranged in parallel on the outermost layer of the thermoelectric element;
the conducting layer is made of tungsten, the transition layer is made of graphite, the conducting layer and the transition layer are connected to form an electrode of the thermoelectric device, and the electrode is composed of a plurality of discontinuous electrode blocks;
the thermocouple arms comprise P-type thermocouple arms and N-type thermocouple arms, the P-type thermocouple arms and the N-type thermocouple arms are arranged at intervals, a heat insulation layer is filled between every two adjacent thermocouple arms, and the thermocouple arms are made of SiGe;
each electrode block at two ends of the couple arm is connected with a group of couple pairs consisting of a P-type couple arm and an N-type couple arm, and the electrode block at one end of the couple arm and the electrode at the other end of the couple arm opposite to the electrode at the other end of the couple arm are staggered by one couple arm.
Preferably, the thermoelectric device comprises at least two couple pairs consisting of a P-type couple arm and an N-type couple arm.
Preferably, the insulating plate is aluminum nitride.
Preferably, the heat insulation layer is made of inorganic glue.
A method of fabricating a SiGe thermoelectric device for a space stack thermoelectric power supply, the method comprising:
s1: preparing an electrode consisting of a tungsten conducting layer and a graphite transition layer, and connecting the tungsten conducting layer and the graphite transition layer into a whole by using a mould;
s2: bonding SiGe couple arms by using inorganic glue, wherein P-type couple arms and N-type couple arms are arranged at intervals, and an inorganic glue heat insulation layer is filled between adjacent couple arms to form a SiGe couple arm array;
s3: respectively welding 2 electrodes formed by connecting a tungsten conducting layer and a graphite transition layer with two ends of the SiGe couple arm array by adopting a diffusion welding method;
s4: cutting electrodes connected with two ends of the SiGe thermocouple arm array into electrode blocks, wherein any one electrode block is connected with a thermocouple pair consisting of a P-type thermocouple arm and an N-type thermocouple arm;
s5: and adhering an insulating plate on the outer surface of the tungsten conducting layer to form the SiGe device.
Preferably, when the tungsten conductive layer and the graphite transition layer are prepared in step S1, nickel powder is added between the two layers.
Preferably, in the step S3, the diffusion welding method is performed at 1100 to 1300 ℃ under 10 to 25MPa for 10 to 30 minutes.
Preferably, the method for performing electrode cutting in step S4 is wire cutting.
The invention has the beneficial effects that: according to the preparation method of the SiGe thermoelectric device for the space stack thermoelectric power supply, the hot end and the cold end of the thermoelectric device can both bear high-temperature environments, the structure is compact, the thermocouple material, the hot end electrode and the cold end electrode are connected by a diffusion welding method at the same time, and the prepared thermoelectric device is guaranteed to be suitable for high temperature. The SiGe thermoelectric device provided by the invention can be used for a space stack thermoelectric power supply.
Drawings
FIG. 1 is a schematic structural diagram of a SiGe thermoelectric device for a space stack thermoelectric power supply in an embodiment of the present invention;
FIG. 2 is a graph of performance of a SiGe thermoelectric device for a space stack thermoelectric power supply prepared in an embodiment of the present invention;
in the figure: 1. insulating board 2, conducting layer 3, transition layer 4, P type galvanic couple arm 5, N type galvanic couple arm 6, insulating layer.
Detailed Description
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.
The invention is described in detail below with reference to the figures and specific embodiments.
As an embodiment, the SiGe thermoelectric device for space stack thermoelectric power supply shown in fig. 1 is in a sandwich structure, and includes: the thermoelectric device comprises two insulating plates 1 arranged in parallel on the outer layer of the thermoelectric device, two conducting layers 2 arranged in parallel on the inner sides of the insulating plates 1, two transition layers 3 arranged in parallel on the inner sides of the conducting layers 2, a plurality of thermocouple arms clamped between the two transition layers 3 and a heat insulating layer 6 arranged between the thermocouple arms;
the conducting layer 2 and the transition layer 3 are connected into a whole, the conducting layer 2 is made of tungsten, the transition layer 3 is made of graphite, the conducting layer 2 and the transition layer 3 form an electrode of the thermoelectric device, and the electrode is cut into a plurality of discontinuous electrode blocks;
the thermocouple arms comprise P-type thermocouple arms 4 and N-type thermocouple arms 5, the P-type thermocouple arms 4 and the N-type thermocouple arms 5 are arranged at intervals, heat insulation layers 6 are filled between adjacent thermocouple arms, the thermocouple arms are made of SiGe, the heat insulation layers 6 are made of inorganic glue and play roles of mechanical support, heat insulation and electric insulation, each electrode block at two ends of each thermocouple arm is connected with a couple pair consisting of the P-type thermocouple arms 4 and the N-type thermocouple arms 5, the electrode block at one end of each thermocouple arm is arranged with the electrode opposite to the electrode at one end of each thermocouple arm in a staggered mode, and all the thermocouple arms and the electrodes are in a connected folded strip shape as shown in figure 1;
the thermoelectric device comprises at least two couple pairs consisting of a P-type couple arm and an N-type couple arm.
The insulating plate 1 is made of aluminum nitride.
A method of fabricating a SiGe thermoelectric device for a space stack thermoelectric power supply, the method comprising:
s1: preparing an electrode consisting of a tungsten conducting layer and a graphite transition layer, and connecting the tungsten conducting layer and the graphite transition layer into a whole by using a mould;
s2: bonding SiGe couple arms by using inorganic glue, wherein P-type couple arms and N-type couple arms are arranged at intervals, and the inorganic glue filled between adjacent couple arms is solidified to form a heat insulation layer to form a SiGe couple arm array;
s3: respectively welding electrodes formed by connecting the tungsten conducting layer and the graphite transition layer with two ends of the SiGe couple arm array by adopting a diffusion welding method;
the specific process is as follows: placing the electrode, the SiGe thermocouple arm array and the electrode in a mold from bottom to top, and placing the mold in a diffusion welding furnace for heating and pressurizing to connect the SiGe thermocouple arm with the electrode, wherein the diffusion welding temperature is 1100-1300 ℃, the pressure is 10-25 MPa, and the time is 10-30 minutes;
s4: cutting electrodes connected with two ends of the SiGe thermocouple arm array into electrode blocks, wherein any one electrode block is connected with a thermocouple pair consisting of a P-type thermocouple arm and an N-type thermocouple arm, and the cutting method can be a linear cutting method;
s5: and adhering an insulating plate on the outer surface of the tungsten conducting layer to form the SiGe device.
Examples
The following describes a specific embodiment of the present invention by taking a thermoelectric device including 3 pairs of SiGe thermocouple arms and a series circuit therein as an example:
(1) preparing a tungsten/graphite electrode, wherein the size of a tungsten sheet is 10mm multiplied by 15mm multiplied by 0.5mm, and the size of a graphite sheet is 10mm multiplied by 15mm multiplied by 2mm, placing the tungsten sheet, nickel powder and the graphite sheet in a graphite mould from bottom to top, and sintering the tungsten sheet, the nickel powder and the graphite sheet in a vacuum hot-pressing sintering furnace at 1400 ℃ and 20MPa for 20 minutes to prepare the tungsten/graphite electrode;
(2) alternately arranging 3N-type SiGe thermocouple arms and 3P-type SiGe thermocouple arms according to the sequence of N-SiGe/P-SiGe/N-SiGe/P-SiGe/N-SiGe/P-SiGe, bonding each two thermocouple arms by using a high-temperature resistant inorganic adhesive to form a SiGe thermocouple arm array, wherein the size of each thermocouple arm is 2mm in thickness, 10mm in width and 8mm in height, and the gap between the thermocouple arms is 0.5 mm;
(3) placing a tungsten/graphite electrode, a SiGe couple arm array and the tungsten/graphite electrode in a graphite mould from bottom to top in sequence, wherein one graphite surface in the electrode is contacted with the upper surface and the lower surface of the SiGe array, crimping the electrode and SiGe at 1200 ℃ and 20MPa in a vacuum hot pressing sintering furnace for 20min, and connecting the electrode and SiGe to form a tungsten/graphite electrode-SiGe couple arm array-tungsten/graphite electrode combination;
(4) for the tungsten/graphite electrode-SiGe thermocouple arm array-tungsten/graphite electrode assembly welded in the previous step, a wire cutting machine is used for cutting a hot end electrode and a cold end electrode, so that a designed circuit is formed in the device;
(5) and adhering an aluminum nitride insulating plate on the surface of the electrode by using a high-temperature resistant inorganic adhesive.
In the SiGe thermoelectric device prepared in this embodiment, when the hot-side temperature is 800 ℃ and the cold-side temperature is 300 ℃, the output electric power is about 1.2W @3A, as shown in fig. 2. The internal resistance of the device is 46m omega before and after heat treatment at 927 ℃ for 300 hours, and is unchanged.
Claims (8)
1. The utility model provides a SiGe thermoelectric device for space heap thermoelectric power supply which characterized in that, the thermoelectric device is sandwich structure, includes: the thermocouple comprises two insulating plates, two conducting layers, two transition layers, a plurality of thermocouple arms and a heat insulation layer, wherein the two insulating plates are arranged on the outermost layer of the thermoelectric device in parallel, the two conducting layers are arranged on the inner sides of the insulating plates in parallel, the two transition layers are arranged on the inner sides of the conducting layers in parallel, and the plurality of thermocouple arms are arranged between the two transition layers;
the conducting layer is made of tungsten, the transition layer is made of graphite, the conducting layer and the transition layer are connected to form an electrode of the thermoelectric device, and the electrode is composed of a plurality of discontinuous electrode blocks;
the thermocouple arms comprise P-type thermocouple arms and N-type thermocouple arms, the P-type thermocouple arms and the N-type thermocouple arms are arranged at intervals, heat insulation layers are filled between every two adjacent thermocouple arms, and the thermocouple arms are made of SiGe;
each electrode block at two ends of the couple arm is connected with a group of couple pairs consisting of a P-type couple arm and an N-type couple arm, and the electrode block at one end of the couple arm and the electrode at the other end of the couple arm opposite to the electrode at the other end of the couple arm are staggered by one couple arm.
2. The SiGe thermoelectric device for a space stack thermoelectric power supply according to claim 1, wherein the thermoelectric device comprises at least two couple pairs consisting of a P-type couple arm and an N-type couple arm.
3. The SiGe thermoelectric device for a space stack thermoelectric power source of claim 1, wherein the insulating plate is aluminum nitride.
4. The SiGe thermoelectric device for a space stack thermoelectric power supply as claimed in claim 1, wherein the thermal insulation layer is an inorganic paste.
5. A preparation method of the SiGe thermoelectric device for the space stack thermoelectric power supply as claimed in any one of claims 1 to 4, wherein the method comprises:
s1: preparing an electrode consisting of a tungsten conducting layer and a graphite transition layer, and connecting the tungsten conducting layer and the graphite transition layer into a whole by using a mould;
s2: bonding SiGe couple arms by using inorganic glue, wherein P-type couple arms and N-type couple arms are arranged at intervals, and an inorganic glue heat insulation layer is filled between adjacent couple arms to form a SiGe couple arm array;
s3: respectively welding 2 electrodes formed by connecting a tungsten conducting layer and a graphite transition layer with two ends of the SiGe couple arm array by adopting a diffusion welding method;
s4: cutting electrodes connected with two ends of the SiGe thermocouple arm array into electrode blocks, wherein any one electrode block is connected with a thermocouple pair consisting of a P-type thermocouple arm and an N-type thermocouple arm;
s5: and adhering an insulating plate on the outer surface of the tungsten conducting layer to form the SiGe device.
6. The method of claim 5, wherein nickel powder is added between the tungsten conductive layer and the graphite transition layer when the tungsten conductive layer and the graphite transition layer are prepared in step S1.
7. The method of claim 5, wherein in step S3, the diffusion welding method is performed at 1100-1300 ℃, under 10-25 MPa, for 10-30 min.
8. The method for fabricating a SiGe thermoelectric device for a thermopile thermoelectric power source of claim 5, wherein the electrode cutting in step S4 is performed by wire cutting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111594734.3A CN114497339A (en) | 2021-12-23 | 2021-12-23 | SiGe thermoelectric device for space reactor thermoelectric power supply and preparation thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111594734.3A CN114497339A (en) | 2021-12-23 | 2021-12-23 | SiGe thermoelectric device for space reactor thermoelectric power supply and preparation thereof |
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| CN114497339A true CN114497339A (en) | 2022-05-13 |
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| CN202111594734.3A Pending CN114497339A (en) | 2021-12-23 | 2021-12-23 | SiGe thermoelectric device for space reactor thermoelectric power supply and preparation thereof |
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