CN1144283C - 电路板平面化方法和制造半导体器件的方法 - Google Patents
电路板平面化方法和制造半导体器件的方法 Download PDFInfo
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- CN1144283C CN1144283C CNB981226671A CN98122667A CN1144283C CN 1144283 C CN1144283 C CN 1144283C CN B981226671 A CNB981226671 A CN B981226671A CN 98122667 A CN98122667 A CN 98122667A CN 1144283 C CN1144283 C CN 1144283C
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
一种电路板平面化的方法,它包括以下步骤:利用粘合层将两面有引线层的电路板固定在具有一平整表面的板上,其中电路板受到固定其上的平整部件的压迫。
Description
本发明涉及电路板平面化方法和制造半导体器件的方法。
半导体器件缩小了信息通信设备、办公电子设备、家用电子设备、工业电子设备(例如测量仪器和组装机器人)、医学电子设备和电子玩具的尺寸,并且便于微型化。
半导体器件的制造需要半导体元件和固定元件的接线板。作为接线板上半导体元件的固定技术,引线连接通常是主流技术。但是近年来能够缩小半导体元件安装面积的倒装芯片技术正在成为主流技术。对于安装半导体元件的接线板,在利用引线连接方法安装半导体元件的过程中,半导体元件上的电极向外通过引线连接到半导体元件外部的接线板电极上,并且接线板上电极的啮合点可大于半导体元件电极的啮合点。相反,在利用倒装芯片方法安装半导体元件过程中,半导体元件的电极必需与接线板上的电极一一对应。因此作为利用倒装芯片安装半导体元件的接线板,需要高密度电路板,即板上的线应是精细的。而且半导体器件尺寸的缩小要求引线层同内部通孔与电路板相连。
陶瓷多层印刷电路板可以满足上述要求。但是与注入玻璃环氧树脂板之类的树脂板相比,陶瓷平板的成本下降有限,因此限制了其在消费电子产品中的应用。
由于与陶瓷平板的制造方法不同,所以树脂平板更有可能大幅度降低成本。但是树脂平板的刚性不如陶瓷平板,因而引线密度不能一致,且当板的厚度减小时将发生变形,因而难于在半导体元件倒装芯片方法中采用。
针对上述情况,本发明的目标是提供一种稳定地制造半导体器件的方法。
按照本发明的电路板平面化方法,其特征在于包括以下步骤:利用粘合层将两面有引线层的电路板固定在具有一平整表面的板上,其中电路板受到固定其时的平整部件的压迫。
按照本发明的半导体器件制造方法,其特征在于包括以下步骤:利用粘合层将两面有引线层的电路板固定在具有一平整表面的板上,其中所述电路板受到固定其时的平整部件的压迫;将半导体元件固定为使得其上多个电极一一对应地向下面朝固定电路板暴露引线连接;用绝缘树脂涂胶填入电路板与半导体元件之间的缝隙;使绝缘树脂涂胶凝固,以及将安装半导体元件的电路板从与具有平整表面的板交界的粘合层处剥离下来。
按照本发明的半导体器件制造方法,其特征在于包括以下步骤:利用粘合层将两面有引线层的电路板固定在具有一平整表面的母板上,其中所述电路板受到固定其时的平整部件的压迫;将半导体元件固定为使得其上多个电极一一对应地向下面朝固定电路板暴露引线连接;用绝缘树脂涂胶填入电路板与半导体元件之间的缝隙;使绝缘树脂涂胶凝固。
图1为按照本发明第一实施例的制造过程第一步中半导体器件的剖面示意图;
图2为按照本发明第一实施例的制造过程第二步中半导体器件的剖面示意图;
图3为按照本发明第一实施例的制造过程第三步中半导体器件的剖面示意图;
图4为按照本发明第一实施例的制造过程第四步中半导体器件的剖面示意图;
图5为按照本发明第一实施例的制造过程第五步中半导体器件的剖面示意图;
图6为按照本发明第三实施例的一个制造过程中半导体器件的剖面示意图;
图7为在平板上制造半导体器件的一步过程中制造多个半导体器件的剖面示意图;以及
图8(a)和8(b)为按照本发明第四实施例的制造过程不同阶段中半导体器件的剖面示意图。
以下通过结合附图的实施例描述本发明。
(实施例1)
图1-5示出了按照本发明第一实施例的制造过程不同步骤中半导体器件的剖面图。
第一步:两面带有引线层121的电路板12的结构为两面上的引线层121通过内部通孔电学连接,并且板体材料为环氧树脂,其中将芳族聚酰胺纤维分散在环氧树脂内。值得指出的是,可以用玻璃纤维代替芳族聚酰胺纤维。电路板12的尺寸为12mm×12mm×0.4mm,而区域12mm×12mm内的平整度约为30微米。接着制作平整度小于0.5微米的玻璃平板11。玻璃平板11的尺寸为40mm×40mm×1.5mm。主要由半凝固状态的环氧树脂构成的粘合片13(Nitto Shinko制造的B-EL10)堆叠在电路板12与玻璃平板11之间。粘合片13的尺寸为13mm×13mm×0.04mm。将堆叠结构加热至50℃可以得到更好的工作特性。
第二步:层叠在一起的电路板12、粘合片13和玻璃平板11在加热的同时还受到压迫,从而使电路板12平整以使半凝固状态下的粘合片13凝固。该工艺条件为150℃和20g/cm2。值得指出的是,下压凝固粘合片13可以使电路板12与玻璃平板11粘合紧密而不夹杂气泡。在粘合片13凝固之后,电路板12与玻璃平板11紧密粘合在一起,并且电路板12的平整度达到10微米以下。而且电路板12由上往下压确保了平面化。在图2中有用作平整部件的压迫用平板10。
第三步:半导体元件14面朝下安装在平面化电路板12上。以下安装方法被采用。即,在半导体元件电极上形成金凸缘,并且金凸缘端部上涂敷导电粘合剂,金凸缘与电路板12上的引线电极通过导电粘合剂粘合在一起。导电粘合剂是内部自制产品,含有作为导电材料的银,并且凝固温度为120℃。
第四步:绝缘树脂涂胶15被填入半导体元件14与电路板12之间的缝隙,随后加热凝固绝缘树脂涂胶15。绝缘树脂涂胶15完全是室内制造产品,其含有主成份的环氧树脂和作为填充剂的二氧化硅,并且凝固温度为150℃。这使得半导体器件16通过粘合片13粘合到玻璃平板11上。在凝固之后,该绝缘树脂平板15担当起防止半导体器件弯曲的作用。
第五步:为了将半导体器件16从玻璃平板11上取下,凝固的粘合片13被加热至100℃左右。凝固的粘合片13的玻璃过渡温度为70℃左右,因此加热温度在70℃以上,使粘合片13的结构软化,便于移开半导体器件16。
在该实施例中,采用的是玻璃平板,但是只要有良好的平整度,也可以采用煅烧氧化铝或SUS板。而且由于该板具有平整度,所以也可以作为母板。在这种情况下,无需在最后的步骤中将电路板12和半导体元件14从板上取下,这提供了方便。在这种工艺中,需要采用各向异性导电粘合剂作为粘合层材料。
而且对于比较实例也作了同样的实验,但是其粘合片与热塑粘合片的粘合力小于上述实施例中所用粘合片。表1示出了结果。
表1
粘合片材料 | 粘合力(5mm直径的面积) | 固定能力 |
Nitto Shinko制造的B-EL10(实施例1) | 2kgf | 良好 |
Nitto Denko制造的RevaalphaNo.3195H | 0.5kgf | 不佳 |
Nitto Denko制造的双面带 | 1kgf | 不佳 |
每种粘合片的粘合力采用下述方法测量。即,用粘合片固定不锈钢制的直径5mm圆柱体下方。随后测量沿垂直方向将不锈钢制品拔离粘合片所施加的力。通过对在上述实施例1的半导体元件固定方法中所实现的半导体元件与电路板之间的连接的判定确定固定能力。
而且在该实施例中,只有一块12mm×12mm的电路板粘合在50mm×50mm的玻璃平板上。但是毫无疑问,即使是多块电路板如图7所示进行粘合,也可以达到同样的效果。
而且在本实施例中,形成于电路板两面上的引线通过内部通孔相连。但是毫无疑问,所谓的多层印刷电路板(通过内部层实现连接)可以提供同样的结果。
(实施例2)
在实施例2中,不采用粘合片而采用粘合胶。粘合胶为Lockite制造的3016,它是一种少溶剂性热定型绝缘树脂涂胶,主要成份为环氧树脂。
首先利用丝网印刷的方法在玻璃平板一块13mm×13mm的区域内上涂敷粘合胶。在该步骤中,薄膜厚度约为50微米。在该状态下,在大约50℃下进行热处理以使粘合胶处于半凝固状态,从而层叠在电路板上。随后按照与实施例1相同的工艺制造半导体器件以获得与实施例1相同的结果。
而且经过证实,如果不用半凝固状态的粘合胶将电路板与玻璃平板层叠在一起也能获得同样的结果。
(实施例3)
以下借助图6描述按照本发明第三实施例的半导体器件制造方法。图6示出了第三实施例其中一个制造工艺中半导体器件的剖面图。
电路板22通过粘合层23与平整的玻璃平板21粘合在一起,从而使电路板22获得良好的平整度。半导体元件24固定在电路板22上,并且绝缘树脂填充在半导体元件24与电路板22之间的缝隙内。
与第一实施例不同之处是粘合层的材料成份。即,本实施例粘合层内包含热膨胀指数大于粘合层材料的填充剂26。所用粘合层完全是内部自制产品,材料成份为大约70ppm/℃的环氧树脂和大约150ppm/℃的玻璃珠作为填充剂26。
利用具有这种材料成份的粘合层23使得粘合层23中具有较大热膨胀系数的填充剂26在为将半导体器件27从玻璃平板21上移开而加热时膨胀。这便于移开半导体器件27。
(实施例4)
以下借助图8描述按照本发明第四实施例的半导体器件制造方法。图8示出了第四实施例制造过程中半导体器件的剖面图。
电路板42是平整的,并且与设有开孔46的煅烧氧化铝板41粘合在一起,从而通过粘合层43与电路板42的各个电极对应,由此得到良好的平整度。半导体元件44固定在平整度良好的电路板42上。煅烧的氧化铝板41包含开孔46,并且可以在这种状态下检查半导体元件44与电路板42引线层121之间的电学连接。
作为检查结果,当发现连接不良时,半导体元件44与电路板42未互相连接在一起。因此可以替换半导体元件44或电路板44以重复该工艺直到实现连接为止。只有在实现这种连接之后,才将绝缘树脂45填充入半导体元件44与电路板42之间缝隙内以实现粘合。
如上所述,本发明的半导体器件制造方法即使在树脂板平整度较差的情况下也可以稳定地用倒装芯片方法固定半导体元件。
本发明的半导体器件制造方法提供的效果是,当粘合层的粘合力大于1.5kgf/5mmΦ时,即使树脂板有较大的卷绕,也可以达到平面化从而可以稳定地用倒装芯片方法固定半导体元件。
本发明的半导体器件制造方法提供的效果是,当填充剂包含在粘合层的绝缘树脂内,并且填充剂的热膨胀系数大于绝缘树脂的时候,可以通过热处理方便地从平板上取下半导体器件。
本发明的半导体器件制造方法提供的效果是,当在平板所需位置上设置开孔时,可以检查半导体元件与电路板之间的电学连接,因此不会制造出次品。
Claims (12)
1.一种电路板平面化的方法,其特征在于包括以下步骤:利用粘合层将两面有引线层的电路板固定在具有一平整表面的板上,其中电路板受到固定其时的平整部件的压迫。
2.一种半导体器件制造方法,其特征在于包括以下步骤:利用粘合层将两面有引线层的电路板固定在具有一平整表面的板上,其中所述电路板受到固定其时的平整部件的压迫;将半导体元件固定为使得其上多个电极一一对应地向下面朝固定电路板暴露引线连接;用绝缘树脂涂胶填入电路板与半导体元件之间的缝隙;使绝缘树脂涂胶凝固。
3.如权利要求2所述的半导体器件制造方法,其特征在于所述方法还包括将安装半导体元件的电路板从与具有平整表面的板交界的粘合层处剥离下来的步骤。
4.如权利要求2所述的半导体器件制造方法,其特征在于所述板是母板。
5.如权利要求3或4所述的方法,其特征在于所述粘合层的粘合力为1.5kgf/5mmΦ或以上。
6.如权利要求3或4所述的方法,其特征在于所述粘合层首先作热定型涂胶,随后通过热处理将所述电路板与所述平板粘合在一起。
7.如权利要求3或4所述的方法,其特征在于所述粘合层首先是半凝固状态下的热定型树脂薄膜,随后通过热处理将所述电路板与所述平板粘合在一起。
8.如权利要求3所述的方法,其特征在于在所述粘合层的材料中包含填充剂,并且所述填充剂的热膨胀系数大于所述粘合层材料的热膨胀系数。
9.如权利要求3或4所述的方法,其特征在于多个所述电路板通过所述粘合层固定在单块平板上,并且所述半导体元件分别安装在多块所述电路板上。
10.如权利要求3或4所述的方法,其特征在于在通过所述粘合层将所述电路板固定在具有平整表面的板上的步骤中,所述粘合层被加热至150℃以实现固化和连接,而在将安装所述半导体元件的所述电路板从与具有平整表面的所述板交界的粘合层处剥离下来的所述步骤中,所述粘合层被加热至100℃以使其软化。
11.如权利要求3或4所述的方法,其特征在于所述平板在对应所述电路板所述电极的位置上设有开孔,并且在安装半导体元件之后而在填充所述绝缘树脂涂胶之前,利用开孔检查所述半导体元件与所述电路板之间的连接情况。
12.如权利要求3或4所述的方法,其特征在于所述电路板为多层印刷电路板。
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KR0158868B1 (ko) * | 1988-09-20 | 1998-12-01 | 미다 가쓰시게 | 반도체장치 |
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US6391211B1 (en) * | 2000-09-06 | 2002-05-21 | Visteon Global Technologies, Inc. | Method for making an electrical circuit board |
-
1998
- 1998-11-18 TW TW087119108A patent/TW463336B/zh not_active IP Right Cessation
- 1998-11-19 CN CNB981226671A patent/CN1144283C/zh not_active Expired - Lifetime
- 1998-11-19 US US09/195,514 patent/US6703262B2/en not_active Expired - Lifetime
- 1998-11-19 KR KR1019980049828A patent/KR100551388B1/ko not_active IP Right Cessation
-
2002
- 2002-12-18 US US10/322,406 patent/US6723251B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20010029066A1 (en) | 2001-10-11 |
US6703262B2 (en) | 2004-03-09 |
US20030092327A1 (en) | 2003-05-15 |
TW463336B (en) | 2001-11-11 |
KR19990045430A (ko) | 1999-06-25 |
KR100551388B1 (ko) | 2006-05-25 |
CN1217576A (zh) | 1999-05-26 |
US6723251B2 (en) | 2004-04-20 |
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