CN114273328A - Double-layer megawave cleaning system - Google Patents

Double-layer megawave cleaning system Download PDF

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Publication number
CN114273328A
CN114273328A CN202111658773.5A CN202111658773A CN114273328A CN 114273328 A CN114273328 A CN 114273328A CN 202111658773 A CN202111658773 A CN 202111658773A CN 114273328 A CN114273328 A CN 114273328A
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cleaning
tank
base
cleaning tank
generating device
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CN202111658773.5A
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CN114273328B (en
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唐宝国
丁立
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Hefei Zhihui Semiconductor Application Technology Co ltd
PNC Process Systems Co Ltd
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Hefei Zhihui Semiconductor Application Technology Co ltd
PNC Process Systems Co Ltd
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Abstract

The invention relates to a double-layer megawave cleaning system which comprises a base, an ultrasonic signal generating device, a bath and a cleaning tank for cleaning a wafer, wherein the ultrasonic signal generating device is arranged on the base, the base is a movable base, and the movement of the base changes the direction of the ultrasonic signal generating device for emitting sound waves relative to the cleaning tank; the bath is arranged at the upper end of the ultrasonic signal generating device, and a sound wave conduction medium is contained in the bath; the cleaning tank is arranged above the bath tank, the bottom of the cleaning tank is immersed in the sound wave conduction medium in the bath tank, and the cleaning tank is filled with cleaning liquid. The ultrasonic cleaning device changes the sound wave direction of the ultrasonic signal generating device through the movement of the base, changes the projection area of the wafer in the sound wave direction, further improves the cleaning effect and efficiency, and meanwhile, the change of the sound wave direction generates pressure difference at the bottom of the cleaning tank, so that bubbles gathered at the bottom of the cleaning tank are eliminated, the energy loss of ultrasonic waves is reduced, and the cleaning effect is improved.

Description

Double-layer megawave cleaning system
Technical Field
The invention relates to the field of semiconductor process equipment, in particular to a double-layer megawave cleaning system and a double-layer megawave cleaning method.
Background
The traditional ultrasonic cleaning equipment has long-term application in the aspect of cleaning semiconductor crystal wafers, along with the line width of the manufacturing process becoming smaller and smaller, the requirement for cleaning becomes higher and higher, and the frequency of ultrasonic waves is also continuously increased from kilohertz to megahertz. However, as the frequency of the sound wave increases, the directivity characteristic and energy attenuation of the sound wave become more obvious. Most of the traditional cleaning modes are that a wafer is vertically placed above an ultrasonic signal generator, the projection area of the wafer to ultrasonic waves is small, and the cleaning effect of the middle part and the top part of the wafer is weaker than that of the bottom part.
The existing cleaning equipment generally adopts the mode that the bottom of a cleaning groove is changed into an inclined plane from a plane, or a circulating mechanism is added at the bottom of the cleaning groove, so that the quantity of bubbles accumulated at the bottom of the cleaning groove is reduced.
In the prior art, for example, patent application No. CN201480023016.2 discloses an ultrasonic cleaning apparatus and a cleaning method, which employs a cleaning tank having an inclined bottom, and the inclination direction of adjacent cleaning tanks is changed to improve the cleaning effect.
The prior art also discloses semiconductor cleaning equipment as disclosed in the patent application No. CN202110599855.0, which comprises a bath, a cleaning tank for accommodating a wafer, a sound wave signal generating device, and a conducting medium spraying device, wherein the cleaning tank is arranged at the bottom of the bath, the sound wave signal generating device is arranged at the bottom of the bath, the conducting medium in the bath is used for conducting the sound wave signal to the cleaning tank, the conducting medium spraying device is arranged in the bath and is used for spraying the conducting medium to the bottom of the cleaning tank, and bubbles at the bottom of the wafer cleaning tank are pushed away from the bottom of the cleaning tank by the conducting medium flowing from one side to the other side.
The prior art increases the utilization rate of ultrasonic waves under the condition of the same power, but the contact area of the ultrasonic wave transmission direction and the surface of the wafer is not changed, and the projection area of the wafer in the ultrasonic wave transmission range is not changed.
Disclosure of Invention
The invention provides a double-layer megawave cleaning system in order to eliminate bubbles accumulated at the bottom of a cleaning tank and increase the effect and efficiency of wafer cleaning.
The technical purpose of the invention is realized by the following technical scheme:
the double-layer megawave cleaning system structurally comprises a base, an ultrasonic signal generating device, a bath and a cleaning tank for cleaning wafers, wherein the ultrasonic signal generating device is arranged on the base, the base is a movable base, and the movement of the base changes the direction of the ultrasonic signal generating device for emitting sound waves relative to the cleaning tank; the bath is arranged at the upper end of the ultrasonic signal generating device, and a sound wave conduction medium is contained in the bath; the cleaning tank is arranged above the bath tank, the bottom of the cleaning tank is immersed in the sound wave conduction medium in the bath tank, and the cleaning tank is filled with cleaning liquid.
Furthermore, an overflow trough is arranged in the cleaning tank, the overflow trough is embedded in the cleaning tank, and the cleaning solution is contained in the overflow trough.
Furthermore, a cleaning solution circulating pipeline for circulating and flowing the cleaning solution between the cleaning tank and the overflow tank is connected between the cleaning tank and the overflow tank.
Furthermore, the base also comprises a driving control mechanism for controlling the movement of the base and a driving device for driving the movement of the base.
Furthermore, base supports are mounted on two sides of the base, and the base is movably mounted on the base supports; a cleaning tank support frame is arranged outside the cleaning tank; the cleaning tank support frame is separated from the base support frame.
Furthermore, a plurality of overflow ports are formed in the edge of the upper end of the overflow groove, and the upper end face of the overflow groove is lower than that of the cleaning groove.
Further, the motion mode of the base comprises circular motion, simple harmonic motion or swing motion.
Further, the driving device is driven by a motor or hydraulically.
Further, the ultrasonic signal generating device is a megasonic wave generating device.
Compared with the prior art, the invention has the beneficial effects that:
1. the double-layer megawave cleaning system disclosed by the invention is used for cleaning the wafer, the sound wave direction of the ultrasonic signal generating device is changed through the movement of the base, the projection area of the wafer in the sound wave direction is changed, and the cleaning effect and efficiency are further improved.
2. When the double-layer megawave cleaning system is used for cleaning wafers, the micro bubbles gathered at the bottom of the cleaning tank are extruded out from the bottom of the cleaning tank due to the pressure difference generated by the change of sound waves, the energy loss of ultrasonic waves is reduced, and the cleaning effect is further improved.
3. According to the invention, through the change of the incident angle of the ultrasonic wave, the reflection angle of the sound wave on the surface of the wafer is changed, the utilization rate of the sound wave is further improved, and the possibility of cleaning dead angles is reduced.
Drawings
Fig. 1 is a schematic diagram of a dual-layer megawave cleaning system of the present invention.
Figure 2 is a three-dimensional schematic view of a dual-layer megawave cleaning system of the invention.
FIG. 3 is a prior art bottom bubble elimination scheme for a purge tank.
Figure 4 is a schematic diagram of the motion of the base of the dual layer megasonic cleaning system of the present invention.
Fig. 5 is a graph comparing the reflection of sound waves of the present invention with the reflection of sound waves of the prior art.
In the figure, 1, a base; 2. an ultrasonic signal generating device; 3. a bath; 4. a cleaning tank; 5. a wafer; 6. an overflow trough; 7. an overflow port; 8. a cleaning liquid circulation line; 9. a base support; 10. a cleaning tank support frame.
Detailed Description
The technical solution of the present invention is further described below with reference to specific embodiments:
the wafer is cleaned by the sound wave, the application is wide, generally, the wafer in the cleaning tank is cleaned by the sound wave generating device, the lower end of the cleaning tank is immersed into the bath tank, the bath tank is filled with the sound wave conducting medium, the sound wave is transmitted to the cleaning tank through the sound wave conducting medium, but bubbles are gathered at the bottom of the cleaning tank, and the sound wave is refracted and reflected when encountering the bubbles, so that the energy of the sound wave entering the cleaning tank is influenced; in order to solve this problem, the prior art has adopted the bottom of the cleaning tank as an inclined plane, and as shown in fig. 3, the bubbles can move away from the bottom of the cleaning tank along the inclined plane.
In order to solve the problem, the present embodiment provides a dual-layer megawave cleaning system, which has a structure as shown in fig. 1 and fig. 2, and includes a base 1, an ultrasonic signal generating device 2, a bath 3, and a cleaning tank 4 for cleaning a wafer, wherein the ultrasonic signal generating device 2 is mounted on the base 1, the base 1 is a movable base, and the base 1 changes the direction of the ultrasonic signal generating device emitting sound waves relative to the cleaning tank 4 through movement; the bath 3 is arranged at the upper end of the ultrasonic signal generating device 2, and a sound wave conduction medium such as water is contained in the bath 3; the cleaning tank 4 is arranged above the bath tank 3, the bottom of the cleaning tank 4 is immersed in the sound wave transmission medium in the bath tank 3, and the cleaning solution is contained in the cleaning tank 4. In this embodiment, the ultrasonic signal generator is a megasonic generator, and can emit megasonic waves.
When the ultrasonic cleaning device works, the ultrasonic signal generating device 2 generates megasonic waves, the megasonic waves are transmitted into the cleaning tank 4 through a sonic wave conducting medium in the bath tank 3, and the surface of the wafer 5 is cleaned through the sonic waves; during cleaning, the base 1 moves to change the direction of the sound wave, and the movement mode of the base is circular motion, simple harmonic motion or swing, but not limited to the three movement modes, through the change of the direction of the sound wave, on one hand, the pressure difference generated by the sound wave extrudes and separates the bubbles at the bottom of the cleaning tank 4, on the other hand, the change of the direction of the sound wave can change the projection area of the wafer 5 in the direction of the sound wave, and the cleaning effect and efficiency are improved.
In addition, when the ultrasonic wave forms an included angle with the surface of the wafer 5, the ultrasonic wave is reflected along the surface of the wafer 5, and the directions of the reflection and the propagation of the sound wave do not interfere with each other, and as the subsequent ultrasonic wave is further transmitted, the energy is further superposed, multiple reflections are formed on the surface of the wafer, and as the incident angle of the ultrasonic wave changes, the reflection angle also changes, so that multiple reflection points are formed on the surface of the wafer, the utilization rate of the ultrasonic wave is further improved, and the cleaning dead angle is reduced.
Preferably, an overflow groove 6 is further arranged in the cleaning groove 4, the overflow groove 6 is embedded in the cleaning groove 4, cleaning solution is contained in the overflow groove 6, and the wafer 5 is immersed in the cleaning solution in the overflow groove 6 during cleaning; the upper end of the overflow groove 6 is lower than the upper end of the cleaning groove 4, the edge of the upper end of the overflow groove 6 is provided with an overflow port 7, and cleaning fluid flows between the overflow groove 6 and the cleaning groove 4 from the overflow port 7 in the cleaning process; a cleaning solution circulation line 8 for circulating the cleaning solution flowing between the cleaning tank 4 and the overflow tank 6 is further connected between the cleaning tank 4 and the overflow tank 6, and the cleaning solution flowing into the cleaning tank 4 is circulated back to the overflow tank 6 through the cleaning solution circulation line 8.
The base 1 comprises a driving control mechanism for controlling the movement of the base and a driving device for driving the movement of the base, the base is driven to move by the driving device, the angle and the position of the base and the time under the corresponding angle position are controlled by the driving control mechanism, and the driving control mechanism is a PLC control system.
In the embodiment, base supports 9 are arranged on two sides of a base 1, and the base 1 is movably arranged on the base supports 9; a cleaning tank support frame 10 is arranged outside the cleaning tank 4; the cleaning tank support frame 10 is separated from the base frame 9. Taking the swing as an example, the driving device drives the base 1 to swing relative to the base support 9, the driving device such as a motor cooperating with a speed reducer drives the base to move, or the motor cooperating with a worm to drive the base to move, or a hydraulic device to drive the base to move, and when the base swings, the ultrasonic signal generating device 2 and the bath 3 on the base 1 move together with the base 1, as shown in fig. 4.
The present invention is further explained and not limited by the embodiments, and those skilled in the art can make various modifications as necessary after reading the present specification, but all the embodiments are protected by the patent law within the scope of the claims.

Claims (9)

1. The double-layer megawave cleaning system is characterized by structurally comprising a base, an ultrasonic signal generating device, a bath and a cleaning tank for cleaning wafers, wherein the ultrasonic signal generating device is arranged on the base, the base is a movable base, and the movement of the base changes the direction of the ultrasonic signal generating device for emitting sound waves relative to the cleaning tank; the bath is arranged at the upper end of the ultrasonic signal generating device, and a sound wave conduction medium is contained in the bath; the cleaning tank is arranged above the bath tank, the bottom of the cleaning tank is immersed in the sound wave conduction medium in the bath tank, and cleaning liquid is contained in the cleaning tank.
2. The dual-layer megawave cleaning system according to claim 1, wherein an overflow tank is further disposed in the cleaning tank, the overflow tank is embedded in the cleaning tank, and the cleaning solution is contained in the overflow tank.
3. The dual-layer megawave cleaning system according to claim 2, wherein a cleaning solution circulation line for circulating the cleaning solution between the cleaning tank and the overflow tank is further connected between the cleaning tank and the overflow tank.
4. The dual-layer megawave cleaning system of claim 1, wherein the base further comprises a drive control mechanism for controlling the movement of the base, a drive device for driving the movement of the base.
5. The dual-layer megawave cleaning system of claim 1, wherein a pedestal bracket is mounted to each side of the pedestal, the pedestal being movably mounted to the pedestal bracket; a cleaning tank support frame is arranged outside the cleaning tank; the cleaning tank support frame is separated from the base support frame.
6. The dual-layer megawave cleaning system of claim 2, wherein the overflow trough is provided with a plurality of overflow ports at an upper end edge thereof, and an upper end surface of the overflow trough is lower than an upper end surface of the cleaning tank.
7. The dual-layer megasonic cleaning system of claim 1 wherein the motion of the base comprises circular motion, simple harmonic motion, or oscillatory motion.
8. The dual-layer megawave cleaning system of claim 4, wherein the drive is motor driven or hydraulic driven.
9. The dual-layer megasonic cleaning system of claim 1 wherein the ultrasonic signal generating device is a megasonic generating device.
CN202111658773.5A 2021-12-30 2021-12-30 Double-layer megasonic cleaning system Active CN114273328B (en)

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Application Number Priority Date Filing Date Title
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CN114273328B CN114273328B (en) 2024-04-12

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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH368954A (en) * 1959-04-10 1963-04-30 Albert Dreyer Josef Ultrasonic cleaning device
JPH07328572A (en) * 1994-06-08 1995-12-19 Hitachi Ltd Ultrasonic washing method and apparatus
US20010015211A1 (en) * 1999-06-28 2001-08-23 Intersil Corporation Potted transducer array with matching network in a multiple pass configuration
JP2009231668A (en) * 2008-03-25 2009-10-08 Dainippon Screen Mfg Co Ltd Substrate processing device and method
CN103223406A (en) * 2012-01-27 2013-07-31 硅电子股份公司 Cleaning apparatus, equipment, and method
CN107068595A (en) * 2017-04-14 2017-08-18 常州亿晶光电科技有限公司 Silicon chip ultrasonic wave cleaning device
CN110756513A (en) * 2019-09-19 2020-02-07 上海提牛机电设备有限公司 Wafer cleaning device with sound wave as kinetic energy
CN110813906A (en) * 2019-11-26 2020-02-21 天津科技大学 High-efficient ultrasonic cleaning device with diffusion field washing tank
CN110935686A (en) * 2019-11-27 2020-03-31 北京工业大学 Suspension type ultrasonic-low frequency vibration combined cleaning method and device
CN210788405U (en) * 2019-09-26 2020-06-19 上海峰梅光学科技有限公司 Cleaning transmission device of cleaning machine
CN211757275U (en) * 2020-01-02 2020-10-27 苏州天士达精密机械有限公司 Ultrasonic cleaning machine

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH368954A (en) * 1959-04-10 1963-04-30 Albert Dreyer Josef Ultrasonic cleaning device
JPH07328572A (en) * 1994-06-08 1995-12-19 Hitachi Ltd Ultrasonic washing method and apparatus
US20010015211A1 (en) * 1999-06-28 2001-08-23 Intersil Corporation Potted transducer array with matching network in a multiple pass configuration
JP2009231668A (en) * 2008-03-25 2009-10-08 Dainippon Screen Mfg Co Ltd Substrate processing device and method
CN103223406A (en) * 2012-01-27 2013-07-31 硅电子股份公司 Cleaning apparatus, equipment, and method
CN107068595A (en) * 2017-04-14 2017-08-18 常州亿晶光电科技有限公司 Silicon chip ultrasonic wave cleaning device
CN110756513A (en) * 2019-09-19 2020-02-07 上海提牛机电设备有限公司 Wafer cleaning device with sound wave as kinetic energy
CN210788405U (en) * 2019-09-26 2020-06-19 上海峰梅光学科技有限公司 Cleaning transmission device of cleaning machine
CN110813906A (en) * 2019-11-26 2020-02-21 天津科技大学 High-efficient ultrasonic cleaning device with diffusion field washing tank
CN110935686A (en) * 2019-11-27 2020-03-31 北京工业大学 Suspension type ultrasonic-low frequency vibration combined cleaning method and device
CN211757275U (en) * 2020-01-02 2020-10-27 苏州天士达精密机械有限公司 Ultrasonic cleaning machine

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