CN114080672A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN114080672A CN114080672A CN202080049388.8A CN202080049388A CN114080672A CN 114080672 A CN114080672 A CN 114080672A CN 202080049388 A CN202080049388 A CN 202080049388A CN 114080672 A CN114080672 A CN 114080672A
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Abstract
半导体装置具备半导体元件(1)、引线框(30)、桥接部件(51)和密封树脂(7)。半导体元件具有在一面露出的第1电极(14)和在一面的相反面露出的第2电极(12)。引线框包括安装半导体元件并电连接第1电极的安装部(32)以及与安装部分开的非安装部(31)。桥接部件具有导电性,将第2电极与非安装部电连接。密封树脂具有电绝缘性,热传导率为2.2W以上,以安装部的安装面的相反面(S11)露出的状态,将半导体元件、引线框及桥接部件覆盖。
Description
关联申请的相互参照
本申请基于2019年7月10日提出的日本专利申请第2019-128732号,这里通过参照而引用其记载内容。
技术领域
本发明涉及半导体装置。
背景技术
以往,作为半导体装置的一例,有专利文献1所记载的半导体装置。半导体装置具备发热元件、电连接及热连接于发热元件的一个面的接线端及第1热沉、电连接及热连接于发热元件的另一个面的第2热沉、以及将它们密封的密封树脂体。此外,第1热沉的与接线端对置的对置面的相反面从密封树脂体露出。第2热沉的与发热元件对置的对置面的相反面从密封树脂体露出。
现有技术文献
专利文献
专利文献1:日本特开2015-138843号公报
发明内容
在上述半导体装置中,作为散热面,第1热沉和第2热沉从密封树脂体露出。因此,半导体装置为了确保电绝缘性而需要进一步设置凝胶(gel)等绝缘部件。
本发明的目的在于提供能够确保散热性并且确保电绝缘性的半导体装置。
本发明的一技术方案的半导体装置具备半导体元件、引线框、桥接部件和密封树脂。半导体元件具有在一面露出的第1电极和在一面的相反面露出的第2电极。引线框包括安装半导体元件并电连接第1电极的安装部以及与安装部分开的非安装部。桥接部件具有导电性,将第2电极与非安装部电连接。密封树脂具有电绝缘性,热传导率为2.2W以上,以安装部的安装面的相反面露出的状态,将半导体元件、引线框及桥接部件覆盖。
这样,在上述半导体装置中,不使桥接部件露出地用密封树脂覆盖,所以能够确保电绝缘性。进而,在上述半导体装置中,密封树脂的热传导率为2.2W以上,所以还能够确保散热性。
附图说明
图1是表示实施方式的半导体装置的概略结构的平面图。
图2是沿着图1的II-II线的剖视图。
图3是表示实施方式的半导体装置的散热特性的曲线图。
图4是表示变形例1的半导体装置的概略结构的剖视图。
图5是表示变形例2的半导体装置的概略结构的平面图。
具体实施方式
以下,参照附图说明用来实施本发明的多个形态。在各形态中,有对于与在先形态中说明的事项对应的部分赋予同一标记而省略重复的说明的情况。在各形态中,在仅说明结构的一部分的情况下,关于结构的其他部分能够参照并应用在先说明的其他形态。另外,以下将相互正交的3个方向表示为X方向、Y方向、Z方向。
使用图1、图2、图3,关于半导体装置100进行说明。如图1、图2所示,半导体装置100具备两个半导体元件1、2、两个引线框30、40、两个连接片51、52、以及密封树脂7。在本实施方式中,采用具备两个半导体元件1、2的半导体装置100。随之,半导体装置100具备两个引线框30、40和两个连接片51、52。进而,半导体装置100具备两个引线61、62。
但是,本发明并不限定于此,只要具备至少一个半导体元件即可。此外,半导体装置100只要具备与半导体元件的个数相同数量的引线框以及与半导体元件的个数相同数量的连接片即可。
另外,在图1中,将图简化,为了使各构成要素容易理解,省略了密封树脂7的一部分。即,在图1中省略了密封树脂7的将两个半导体元件1、2、两个引线框30、40、两个连接片51、52和两个引线61、62覆盖的部分。
作为一例,半导体元件1、2采用金属氧化膜半导体场效应晶体管(MOSFET)。但是,本发明并不限定于此,作为半导体元件1、2,也能够采用绝缘栅双极晶体管(IGBT)等。进而,作为半导体元件1、2的一例,也能够采用将IGBT和二极管一体化的逆导通(RC)-IGBT。此外,半导体元件1、2例如能够采用以Si为主成分的元件或以SiC为主成分而构成的元件。
第1半导体元件1具有第1基板11、在第1基板11的一面侧露出的第1漏极电极14、以及在第1基板11的一面的相反面露出的第1源极电极12及第1栅极电极13。第1漏极电极14形成在第1基板11的一面侧的大致整个区域。另一方面,第1源极电极12和第1栅极电极13局部地形成在第1基板11的相反面。
另外,第1基板11在XY平面中例如呈矩形状,在Z方向上具有厚度。在本实施方式中,作为一例,采用Y方向为较长方向、X方向为较短方向的第1基板11。
半导体元件1也可以形成有温度传感器、电流传感器等。该情况下,半导体元件1在与第1源极电极12及第1栅极电极13相同的面上形成与温度传感器、电流传感器电连接的焊盘。此外,该焊盘例如与第1栅极电极13在X方向上排列配置。
第2半导体元件2具有第2基板21、在第2基板21的一面侧露出的第2漏极电极、以及在第2基板21的一面的相反面露出的第2源极电极22及第2栅极电极23。第2半导体元件2具有与第1半导体元件1同样的结构。因此,关于第2半导体元件2,能够参照第1半导体元件1的说明。
另外,第1半导体元件1和第2半导体元件2相当于半导体元件。第1漏极电极14和第2漏极相当于第1电极。第1源极电极12和第2源极电极22相当于第2电极。
第1引线框30具有第1源极端子31、第1漏极端子32和第1信号端子33。第1引线框30例如能够采用以Cu、Fe或其合金等金属材料的导电性材料为主成分而构成的结构。第1源极端子31、第1漏极端子32、第1信号端子33被相互分割。
第1漏极端子32在安装面S12上安装有第1半导体元件1。详细地讲,第1漏极端子32是安装第1半导体元件1且电连接第1漏极电极14的部位。第1漏极端子32经由焊料等导电性连接部件而与第1漏极电极14电连接。由此,第1半导体元件1经由导电性连接部件电连接第1漏极电极14及第1漏极端子32从而被安装于第1漏极端子32。另外,在本实施方式中,作为导电性连接部件而采用焊料。
第1漏极端子32的安装面S12的相反面S11从密封树脂7露出,这在之后说明。因此,第1漏极端子32除了作为电气布线的功能以外,还具有用来将从第1半导体元件1产生的热散热的作为热沉的功能。由此,相反面S11也可以说是散热面。安装面S12和相反面S11例如能够采用平坦的面。
另外,第1漏极端子32相当于安装部。此外,第1漏极端子32也可以称作岛(island)。
第1源极端子31经由第1连接片51而与第1源极电极12电连接。这样,第1源极端子31不安装第1半导体元件1,而是经由第1连接片51而与第1半导体元件1(第1源极电极12)电连接。
第1连接片51例如能够采用以Cu、Fe或其合金等金属材料等导电性材料为主成分而构成的结构。第1连接片51具有与第1源极电极12对置的第1元件对置部51a、与第1源极端子31对应的第1端子对置部51b、以及将第1元件对置部51a和第1端子对置部51b相连的第1连结部51c。第1元件对置部51a、第1端子对置部51b和第1连结部51c构成为一体物。
第1元件对置部51a经由焊料而与第1源极电极12电连接。同样,第1端子对置部51b经由焊料而与第1源极端子31电连接。这样,第1半导体元件1经由第1连接片51将第1源极电极12与第1源极端子31电连接。
在本实施方式中,作为一例而采用在XY平面中例如呈矩形且在Z方向上具有厚度的第1连接片51。此外,在本实施方式中,作为一例而采用第1连结部51c与第1半导体元件1的端部及第1漏极端子32对置的第1连接片51。进而,在本实施方式中,如图2所示,采用第1连结部51c的厚度比第1元件对置部51a薄的第1连接片51。
由此,半导体装置100容易确保第1漏极端子32与第1连接片51的绝缘距离。进而,与第1元件对置部51a是与第1连结部51c相同程度的厚度的情况相比,半导体装置100能够使第1半导体元件1上的热容变大所以能够提高散热性。
另外,第1源极端子31相当于非安装部。此外,第1连接片51相当于桥接部件。
第1信号端子33经由第1引线61而与第1栅极电极13电连接。这样,第1信号端子33不安装第1半导体元件1,而是经由第1引线61而与第1半导体元件1(第1栅极电极13)电连接。
此外,在本实施方式中,采用了形成有多个第1信号端子33的例子。由此,一个第1信号端子33与第1栅极电极13电连接。并且,其他第1信号端子33经由第1引线61而与电连接着温度传感器、电流传感器的焊盘电连接。
另外,第1引线框30中,第1源极端子31的与第1端子对置部51b连接的面、以及第1信号端子33的与第1引线61连接的面,与第1漏极端子32的安装面S12共面。即,第1源极端子31的连接第1端子对置部51b的面以及第1信号端子33的连接第1引线61的面可以说形成在经过安装面S12的XY平面上。同样,第1源极端子31的连接第1端子对置部51b的面的相反面以及第1信号端子33的连接第1引线61的面的相反面与第1漏极端子32的相反面S11共面。
由此,相反面S11、第1源极端子31的连接第1端子对置部51b的面的相反面、以及第1信号端子33的连接第1引线61的面的相反面也可以统一称作相反面S11。
进而,第2引线框40与第1引线框30同样,具有安装面和相反面。由此,以下,没有特别声明而记载为相反面S11的部位表示第1引线框30和第2引线框40的相反面S11。
第2引线框40具有第2源极端子41、第2漏极端子42和第2信号端子43。第2引线框40具有与第1引线框30同样的结构。因此,关于第2引线框40,能够参照第1引线框30的说明。
第2连接片52具有第2元件对置部52a、第2端子对置部52b和第2连结部52c。第2连接片52具有与第1连接片51同样的结构。因此,关于第2连接片52,能够参照第1连接片51的说明。
第2引线62具有与第1引线61同样的结构。因此,关于第2引线62,能够参照第1引线61的说明。
密封树脂7的构成材料包含电绝缘性树脂和热传导率比电绝缘性树脂高的填料。即,密封树脂7在电绝缘性树脂中埋设有填料。电绝缘性树脂例如能够采用环氧类树脂等。另一方面,填料能够采用氧化铝等无机物粒子。密封树脂7例如通过利用金属模的注塑成型等形成。
密封树脂7将半导体元件1、2、引线框30、40、连接片51、52和引线61、62一体地覆盖。密封树脂7可以说与它们相接并密封。此外,如上述那样,在图1中图示的半导体元件1、2、引线框30、40、连接片51、52和引线61、62被密封树脂7密封。并且,密封树脂7在XY平面中呈矩形。
密封树脂7如图2所示,具有第1表面S1和第1表面S1的相反面的第2表面S2。第1表面S1和第2表面S2例如能够采用平坦的面。此外,第1表面S1和第2表面S2可以说沿着XY平面形成。
密封树脂7如图2所示,以漏极端子32、42的相反面S11露出的状态,将半导体元件1、2、引线框30、40、连接片51、52和引线61、62覆盖。引线框30、40的相反面S11的整个区域从密封树脂7露出。第1表面S1与相反面S11共面地形成。
密封树脂7具有电绝缘性,热传导率为2.2W以上。密封树脂7能够通过填料的量及材料来调整热传导率。由此,之后说明的表层树脂部71由具有电绝缘性且热传导率为2.2W以上的材料构成。
密封树脂7覆盖连接片51、52的除了与引线框30、40连接的连接部位以外的整个区域。由此,密封树脂7在连接片51、52上也形成有一部分。即,密封树脂7包括形成在连接片51、52上的表层树脂部71。半导体装置100具备表层树脂部71,以使得连接片51、52不从密封树脂7露出。半导体装置100通过具备表层树脂部71,能够确保连接片51、52的电绝缘性。
表层树脂部71形成在连接片51、52的与半导体元件1、2相反侧的面上。此外,表层树脂部71形成在连接片51、52的与半导体元件1、2相反侧的面的整个区域。由此,第2表面S2以及连接片51、52的与半导体元件1、2对置的对置面的相反面是Z方向上的不同位置的面。另外,连接片51、52的与半导体元件1、2对置的对置面是与源极电极12、22对置的面。
表层树脂部71至少具有填料的粒径的1倍的厚度。由此,密封树脂7能够做成包含填料的表层树脂部71。即,密封树脂7能够在通过填料维持热传导率的同时确保电绝缘性。换言之,密封树脂7能够确保散热性和电绝缘性。
另外,在表层树脂部71的厚度为填料的粒径左右的情况下,密封树脂7可以说在连接片51、52上形成有1层树脂层。此外,密封树脂7也可以说包括具有填料的粒径的1倍以上的厚度的表层树脂部71。
此外,表层树脂部71优选的是厚度为0.2mm以上且0.6mm以下。表层树脂部71的厚度是Z方向的厚度。此外,表层树脂部71的厚度能够通过金属模的腔室(空洞)的尺寸来调整。
由此,可以想到表层树脂部71的厚度会根据连接片51、52的形状及板厚的公差、形成于半导体元件1、2的两面的焊料的公差、引线框30、40的板厚公差而变动。发明者考虑这些公差和将密封树脂7成型时的工序能力等而研究了表层树脂部71的厚度。于是,得到了表层树脂部71的厚度优选为0.4mm±0.2mm的结果。即,半导体装置100通过使表层树脂部71的厚度为0.4mm±0.2mm,容易形成包含填料的表层树脂部71,能够确保散热性和电绝缘性。
另外,在本实施方式中,如图2所示,采用形成有从相反面S11凹陷的部位的引线框30、40。因此,密封树脂7还形成在引线框30、40与第1表面S1之间。但是,本发明并不限定于此。
如以上这样,半导体装置100由于不使连接片51、52露出地用密封树脂7覆盖,所以能够确保电绝缘性。进而,由于密封树脂7的热传导率设为2.2W以上,所以半导体装置100还能够确保散热性。即,半导体装置100能够不在连接片51、52上设置电绝缘性的散热凝胶等地确保电绝缘性和散热性。换言之,半导体装置100能够以半导体装置100单体来确保电绝缘性和散热性。因此,半导体装置100不需要在交货处等用户侧保证电绝缘性和散热性。
进而,如图3所示,通过模拟,将半导体装置100和比较例的半导体装置(以下简称比较例)的散热特性进行了比较。图3中,横轴取凝胶的厚度[mm],纵轴取热阻[℃/W]。该模拟以固定了凝胶上表面的温度的状态进行。凝胶是具有电绝缘性的散热凝胶。
比较例具有将两面散热构造的半导体装置用凝胶绝缘的构造。即,比较例在热沉上设有热传导率为3W的电绝缘性的散热凝胶。
此外,热阻表示表层树脂部71或凝胶的热阻。即,半导体装置100的热阻表示设在连接片51、52上的表层树脂部71的热阻。此外,在表层树脂部71上设有凝胶的情况下,半导体装置100的热阻表示表层树脂部71和凝胶的热阻。
用菱形(◇)的点表示的曲线是表示比较例的散热特性的曲线。用三角形(△)的点表示的曲线是表示密封树脂7的热传导率为3W、表层树脂部71的厚度为0.5mm的情况下的半导体装置100的散热特性的曲线。用圆形(○)的点表示的曲线是表示密封树脂7的热传导率为2.2W、表层树脂部71的厚度为0.6mm的情况下的半导体装置100的散热特性的曲线。用四方形(□)的点表示的曲线是表示密封树脂7的热传导率为1W、表层树脂部71的厚度为0.5mm的情况下的半导体装置100的散热特性的曲线。
本实施方式的半导体装置100没有设置凝胶。因此,半导体装置100的热阻成为凝胶厚为0mm时的值。此外,半导体装置100如上述那样,作为优选的例子而将密封树脂7的热传导率设为2.2W以上。
由此可知,半导体装置100的热阻如图3中的圆形及三角形的点的曲线所示,比8℃/W左右小。因而可知,通过将密封树脂7的热传导率设为2.2W以上,半导体装置100能得到与比较例相同程度或其以下的热阻。即,通过将密封树脂7的热传导率设为2.2W以上,半导体装置100能得到与比较例相同程度或其以上的散热性。进而,通过将密封树脂7的热传导率设为2.2W以上、将表层树脂部71的厚度设为0.6mm以下,半导体装置100能得到与比较例相同程度或其以上的散热性。
以上,对本发明的优选的实施方式进行了说明。但是,本发明完全不受上述实施方式限制,在不脱离本发明的主旨的范围中能够进行各种变形。以下,作为本发明的其他形态,关于变形例1、2进行说明。上述实施方式及变形例1、2也能够分别单独地实施,但也可以适当组合而实施。本发明不限于在实施方式中表示的组合而能够通过各种组合来实施。
(变形例1)
半导体装置100也可以如图4所示那样安装于印刷板200,并经由凝胶400安装于马达300。印刷板200在由电绝缘性的树脂等构成的基板上形成有由导电性部件构成的布线及焊盘。半导体装置100的第1源极端子31、第1漏极端子32、第1信号端子33经由焊料等导电性部件而与印刷板200的焊盘电连接。
马达300例如除了转子及定子以外,还具备收容它们的壳体等。半导体装置100例如被安装在马达300的壳体上。
马达300能够采用被半导体装置100的半导体元件1、2驱动的马达。该情况下,半导体元件1、2是将马达300驱动的逆变器的开关元件。另外,在本实施方式中,作为安装半导体装置100的对象的一例而采用了马达300。但是,本发明并不限定于此。半导体装置100也可以安装在将半导体元件1、2作为驱动元件而被驱动的负载(被安装对象)上。
凝胶400设在第2表面S2上。凝胶400能够采用上述那样的凝胶。但是,半导体装置100以单体具有电绝缘性。因此,半导体装置100不需要用凝胶400确保与马达300的电绝缘性。由此,凝胶400能够使厚度比在比较例中使用的凝胶薄。
当然,半导体装置100能够起到与上述实施方式同样的效果。另外,半导体装置100也可以具备印刷板200、马达300、凝胶400。
(变形例2)
如图5所示,半导体装置110中,半导体元件1、2的配置与半导体装置100不同。半导体装置110可以交替地配置第1半导体元件1和第2半导体元件2。即,半导体装置110相邻于第1信号端子33而配置有第2源极端子41,相邻于第1源极端子31而配置有第2信号端子43。半导体装置110能够起到与半导体装置100同样的效果。
Claims (3)
1.一种半导体装置,其特征在于,
具备:
半导体元件(1、2),具有在一面露出的第1电极(14)和在上述一面的相反面露出的第2电极(12、22);
引线框(30、40),包括安装上述半导体元件并电连接上述第1电极的安装部(32、42)以及与上述安装部分开的非安装部(31、41);
导电性的桥接部件(51、52),将上述第2电极与上述非安装部电连接;以及
密封树脂(7),具有电绝缘性,热传导率为2.2W以上,以上述安装部的安装面(S12)的相反面(S11)露出的状态将上述半导体元件、上述引线框及上述桥接部件覆盖。
2.如权利要求1所述的半导体装置,其特征在于,
上述密封树脂,作为构成材料而包含电绝缘性树脂和热传导率比上述电绝缘性树脂高的填料,具有形成在上述桥接部件上的表层树脂部(71);
上述表层树脂部至少具有上述填料的粒径的1倍的厚度。
3.如权利要求1所述的半导体装置,其特征在于,
上述密封树脂,作为构成材料而包含电绝缘性树脂和热传导率比上述电绝缘性树脂高的填料,具有形成在上述桥接部件上的表层树脂部(71);
上述表层树脂部为0.2mm以上且0.6mm以下的厚度。
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