CN114008755A - 接地带组件 - Google Patents
接地带组件 Download PDFInfo
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- CN114008755A CN114008755A CN201980094654.6A CN201980094654A CN114008755A CN 114008755 A CN114008755 A CN 114008755A CN 201980094654 A CN201980094654 A CN 201980094654A CN 114008755 A CN114008755 A CN 114008755A
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- 239000011248 coating agent Substances 0.000 claims abstract description 39
- 238000000576 coating method Methods 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 5
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 37
- 210000002381 plasma Anatomy 0.000 description 35
- 239000000463 material Substances 0.000 description 15
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- 239000002243 precursor Substances 0.000 description 4
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- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- -1 Polytetrafluoroethylene Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000004963 Torlon Substances 0.000 description 1
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
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- 230000005669 field effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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Abstract
本公开内容涉及用于等离子体处理基板的方法和设备。在一个实施方式中,基板处理腔室包括接地带组件。接地带组件包括接地带和一个或多个连接器,所述一个或多个连接器耦接到基板支撑件和/或腔室主体。每个连接器具有第一夹持构件和第二夹持构件。接地带紧固在每个连接器的第一夹持构件与第二夹持构件之间。第一夹持构件和第二夹持构件中的每一者的内表面耦接至接地带并且涂覆有介电涂层。内表面的厚度和粗糙度的调制使得能够调节连接器的电容特性。
Description
背景
领域
本公开内容的实施方式总体涉及用于使用等离子体处理基板(例如半导体基板)的方法和设备。更具体地,本公开内容的实施方式涉及用于等离子体处理腔室的射频(RF)接地带组件。
相关技术的说明
等离子体增强化学气相沉积(PECVD)用于处理基板,例如半导体基板、太阳能面板基板和平板显示器基板。通常通过将一种或多种前驱物气体引入到真空腔室中来施行PECVD,所述真空腔室具有设置在所述真空腔室中的基板,所述基板在基板支撑件上。经由通常位于真空腔室顶部附近的气体分配板朝向工艺空间引导前驱物气体。通过与电极耦接的一个或多个电源将功率(例如射频(RF)功率)施加到腔室中的电极来将前驱物气体激发(energize)(例如,激活(excite))成等离子体。激活的气体或气体混合物接着反应以在基板支撑件上所设置的基板的表面上形成材料膜层。材料膜层可以是例如钝化层、栅极绝缘体、缓冲层和/或蚀刻终止层。
在处理期间,基板支撑件电接地以消除跨基板支撑件的任何电压降,这将影响跨基板表面的材料膜层的沉积均匀性。另外,如果基板支撑件没有适当地接地,则由于在基板支撑件与腔室主体之间的高电势差,可能在基板支撑件与腔室主体之间产生电弧和形成寄生等离子体。这导致颗粒形成、金属污染、沉积不均匀、产量损失和硬件损坏。寄生等离子体降低腔室内电容耦合等离子体的浓度和密度,从而降低材料膜层的沉积速率。
为了使大面积等离子体腔室中电弧放电和寄生等离子体的发生最小化,通常通过薄且柔性的接地带将基板支撑件接地到腔室主体,以形成电流返回路径。然而,常规的接地带布置在射频(例如13.56MHz和更高)下提供具有相当大电感(例如阻抗)的电返回路径。因此,在基板支撑件与腔室主体之间仍然存在显著的电压电势差,而导致在基板支撑件周边处不想要的电弧放电和寄生等离子体形成。
因此,在本领域中需要具有接地带组件的改良基板处理设备,所述接地带组件具有减小的电阻抗。
概述
本公开内容涉及用于等离子体处理基板的方法和设备。在一个实施方式中,提供一种基板处理腔室。基板处理腔室包括腔室主体,所述腔室主体具有一个或多个腔室壁和腔室底部,所述一个或多个腔室壁部分地限定工艺空间,所述腔室底部耦接至所述一个或多个腔室壁。腔室底部进一步包括与所述腔室底部耦接的腔室连接器,所述腔室连接器具有第一夹持构件,第一夹持构件通过一个或多个紧固件耦接到第二夹持构件。基板支撑件设置在工艺空间中,并且包括与所述基板支撑件耦接的支撑件连接器。支撑件连接器具有第一夹持构件,所述第一夹持构件通过一个或多个紧固件耦接到第二夹持构件。接地带在第一端处通过支撑件连接器耦接到基板支撑件,并且在第二端处通过腔室连接器耦接到腔室底部。经配置接触接地带的支撑件连接器和/或腔室连接器的一个或多个表面具有在所述表面上形成的介电涂层。
在一个实施方式中,提供一种接地带组件。接地带组件包括腔室连接器和支撑件连接器,腔室连接器和支撑件连接器各自具有在所述腔室连接器和所述支撑件连接器的一个或多个表面上形成的介电涂层。接地带组件进一步包括接地带,所述接地带具有第一端和第二端,第一端耦接到支撑件连接器,第二端耦接到腔室连接器。支撑件连接器和腔室连接器用作电容器。
在一个实施方式中,提供一种接地带组件。接地带组件包括接地带,所述接地带具有第一端和第二端,第一端耦接到支撑件连接器,第二端耦接到腔室连接器。接地带的第一端和第二端由介电材料形成,并且腔室连接器和支撑件连接器在第一端和第二端处用作电容器。
附图简要说明
为了能够详细理解本公开内容的上述特征的方式,可通过参考实施方式而获得上文简要概述的本公开内容的更具体说明,在附图中图示实施方式中的一些。然而,值得注意的是,附图仅图示示例性实施方式,因此不视为对本公开内容的范围的限制,本公开内容可允许其他等效的实施方式。
图1图示根据本公开内容的一个实施方式的基板处理***的横截面图,所述基板处理***具有一个或多个接地带,所述一个或多个接地带耦接至在基板处理***中的基板支撑件。
图2图示根据本公开内容的一个实施方式的示例性接地带的侧视图。
图3图示图1的基板处理腔室的一部分的横截面图。
图4A图示根据本公开内容的一个实施方式的接地带组件的一部分的横截面图。
图4B图示根据本公开内容的一个实施方式的接地带组件的一部分的横截面图。
图5图示根据本公开内容的一个实施方式的接地带组件的横截面图。
为便于理解,在可能的情况下,已经使用相同的参考数字来代表图中共有的相同元件。预期的是,一个实施方式的元件与特征可有利地用于其他实施方式中而无需进一步叙述。
具体说明
本公开内容涉及用于等离子体处理基板的方法和设备。在一个实施方式中,基板处理腔室包括接地带组件。接地带组件包括接地带和一个或多个连接器,所述一个或多个连接器耦接到基板支撑件和/或腔室主体。每个连接器具有第一夹持构件和第二夹持构件。接地带紧固在每个连接器的第一夹持构件与第二夹持构件之间。第一夹持构件和第二夹持构件中的每一者的内表面耦接至接地带并且涂覆有介电涂层。内表面的厚度、粗糙度和介电常数的调制使得能够调节连接器的电容特性。
参考在经配置以处理基板的PECVD***中使用而在下文示例性地描述本文中的实施方式,所述PECVD***例如可从加利福尼亚州圣克拉拉市的应用材料公司(AppliedMaterials,Inc.,Santa Clara,California)取得的PECVD***。然而,应理解的是,所公开的主题在其他***配置中是实用的,诸如蚀刻***、其他化学气相沉积***和基板暴露于工艺腔室内的等离子体的任何其他***。应进一步理解,可使用由其他制造商提供的工艺腔室和使用不同类型的基板的腔室来实施本文中所公开的实施方式。还应理解的是,本文中公开的实施方式可适用于在经配置以处理各种形状、大小和尺寸基板的其他工艺腔室中实践。
图1是根据一个实施方式的基板处理***100(例如PECVD设备)的横截面图。基板处理***100经配置以在液晶显示器(LCD)、平板显示器、有机发光二极管(OLED)或用于太阳能电池阵列的光伏电池的制造期间使用等离子体处理大面积基板114。这些结构可包括p-n结以形成用于光伏电池的二极管、金属氧化物半导体场效应晶体管(MOSFET)和薄膜晶体管(TFT)。
基板处理***100经配置以在大面积基板114上沉积各种材料,包括但不限于介电材料、半导体材料和绝缘材料。例如,介电材料和半导电材料可包括多晶硅、外延硅(epitaxial silicon)、非晶硅、微晶硅、硅锗(silicon germanium)、氧化硅、氧氮化硅、氮化硅和上述项的组合或上述项的衍生物。等离子体处理***100进一步经配置以在等离子体处理***100中接收气体,包括但不限于前驱物气体、净化气体和载气。例如,等离子体处理***可以接收气体物质,诸如氢、氧、氮、氩、氦、硅烷和上述项的组合或上述项的衍生物。
基板处理***100包括耦接至气体源104的基板处理腔室102。基板处理腔室102包括腔室壁106和腔室底部108(统称为腔室主体101),腔室壁106和腔室底部108部分地限定工艺空间110。通常经由腔室壁106中的可密封狭缝阀112来进出工艺空间110,狭缝阀112有助于基板114进入工艺空间110和从工艺空间110出来。腔室壁106和腔室底部108通常由铝、铝合金或用于基板处理的其他合适的材料制成。在一个实施方式中,腔室壁106和腔室底部108涂覆有保护性阻挡材料以减小侵蚀的影响。例如,腔室壁106和腔室底部108可涂覆有陶瓷材料、金属氧化物材料或含稀土的材料。
腔室壁106支撑盖组件116。气体分配板126在基板处理腔室102中悬挂于背板128,背板128耦接到盖组件116或腔室壁106。在气体分配板126与背板128之间形成气体空间140。气体源104经由气体供应导管141连接到气体空间140。气体供应导管141、背板128和气体分配板126通常由导电材料形成并且彼此电连通。在一个实施方式中,气体分配板126和背板128由单块材料制成。气体分配板126通常是穿孔的,使得工艺气体被均匀地分配到基板处理空间110中。
基板支撑件118设置在基板处理腔室102内,以大致平行的方式与气体分配板126相对。基板支撑件118在处理期间支撑基板114。通常,基板支撑件118由导电材料(例如铝)制成,并且封装至少一个温度控制装置,所述温度控制装置可控地加热或冷却基板支撑件118以在处理期间使基板114维持在预定温度。
基板支撑件118具有第一表面120和第二表面122。第一表面120与第二表面122相对。垂直于第一表面120和第二表面122的第三表面121耦接第一表面120与第二表面122。第一表面120支撑基板114。第二表面122具有耦接至第二表面122的(stem)杆124。杆124将基板支撑件118耦接至致动器(未示出),所述致动器使基板支撑件118在升高的处理位置(如图所示)和降低的位置之间移动,所述降低的位置有利于基板传送进出基板处理腔室102。杆124还提供在基板支撑件118与基板处理***100的其他部件之间用于电引线和热电偶引线的导管。
RF电源142通常用于在气体分配板126与基板支撑件118之间产生等离子体。RF电源142可在气体分配板126与基板支撑件118之间产生电场,以由在气体分配板126与基板支撑件118之间存在的气体形成等离子体。可使用各种频率。例如,频率可在约0.3MHz与约200MHz之间,例如约13.56MHz。在一个实施方式中,RF电源142在第一输出146处经由阻抗匹配电路144耦接到气体分配板126。阻抗匹配电路144的第二输出148进一步电耦接到腔室主体101。
在一个实施方式中,远程等离子体源(未示出,例如电感耦合的远程等离子体源)也可耦接在气体源104与气体空间140之间。在处理基板之间,可将清洁气体提供到远程等离子体源。清洁气体可在远程等离子体源内被激活成等离子体,而形成远程等离子体。可将由远程等离子体源产生的被激活的物质提供到基板处理腔室102中以清洁腔室部件。RF电源142可进一步激活清洁气体,以减少离解的清洁气体物质的重新组合。合适的清洁气体包括但不限于NF3、F2和SF6。
一个或多个接地带130在每个接地带130的顶端152处电连接至基板支撑件118,并且在每个接地带130的底端154处电连接至腔室底部108。在一个实施方式中,接地带130在顶端152处电连接到基板支撑件118的第二表面122。在另外的实施方式中,接地带130在顶端152处电连接到第三表面121。基板处理腔室102可包括任何合适数量的接地带130,以用于将基板支撑件118接地到腔室底部108,从而在基板支撑件118与腔室底部108之间形成RF电流返回路径(图1中示出五个带)。例如,可使用一个带、两个带、三个带、四个带、五个带或更多个带。接地带130经配置以在处理期间缩短用于RF电流的路径,并且最小化在基板支撑件118的周边附近的电弧放电和寄生等离子体。
基板支撑件118包括耦接至基板支撑件118的一个或多个支撑件连接器132。在一个实施方式中,一个或多个支撑件连接器132耦接至基板支撑件118的第二表面122。在另外的实施方式中,一个或多个支撑件连接器132耦接到基板支撑件118的第三表面121。图1中示出五个支撑件连接器。然而,取决于所使用的接地带130的数量,也考虑其他数量的支撑件连接器132。
类似地,腔室底部108包括耦接至腔室底部108的一个或多个腔室连接器134。在其他实施方式中,一个或多个腔室连接器134耦接到腔室壁106。在图1中示出五个腔室连接器耦接到腔室底部108。然而,取决于所使用的接地带130的数量,也考虑其他数量的腔室连接器134。根据图1中所示的一个实施方式,每个接地带130经由在顶端152处的支撑件连接器132耦接到基板支撑件118,并且经由在底端154处的对应的腔室连接器134耦接到腔室底部108。每个接地带130到支撑件连接器132和腔室连接器134的耦接形成接地带组件150。
图2是示例性接地带130的侧视图。接地带130的主体232通常是薄的、柔性的铝材料矩形片,具有顶端152和底端154,其中可选的狭缝234在顶端152与底端154之间沿主体232在中心定位。在一个实例中,接地带130进一步被制造成具有位于顶端152与底端154之间的一个或多个折叠部(fold)(未示出)。在另一实例中,当基板支撑件118在原始位置(home position)与处理位置之间升高和降低时,在处理期间可形成一个或多个折叠部,从而弯曲接地带130并且形成一个或多个折叠部。在一个实施方式中,接地带130的长度L在约14英寸至约30英寸之间,例如在约18英寸与约28英寸之间,例如在约22英寸与约24英寸之间。在一个实施方式中,接地带130的宽度W在约0.5英寸与约2英寸之间,例如在约1英寸与约1.5英寸之间。图2图示适用于本文中所述的处理***的接地带130的一个实例。接地带130通常是有助于基板处理的任何合适的尺寸、形状和材料。
图3是图1的基板处理腔室102的一部分300的横截面图。图3图示三个接地带组件150,接地带组件150具有接地带130,接地带130通过支撑件连接器132耦接到基板支撑件118,并且进一步通过腔室连接器134耦接到腔室底部108。如图所示,每个接地带组件150包括耦接到单个支撑件连接器132和单个腔室连接器134的单个接地带130。然而,也预期一个或多个接地带130可耦接到每个支撑件连接器132和/或每个腔室连接器134。例如,每个支撑件连接器132和/或每个腔室连接器134可耦接到两个接地带130。
根据一个实施方式,每个支撑件连接器132和腔室连接器134分别包括第一夹持构件362、372和第二夹持构件364、374。接地带130在顶端152处紧固在每个支撑件连接器132的第一夹持构件362与第二夹持构件364之间,并且接地带130在底端154处紧固在每个腔室连接器134的第一夹持构件362与第二夹持构件364之间。接地带130的紧固是通过在第一夹持构件362、372与第二夹持构件364、374之间的机械夹持力实现的。
图4A更详细地图示支撑件连接器132。在一个实施方式中,支撑件连接器132的第一夹持构件362是具有主要主体480和延伸部482的L形块。接触面积在约0.5平方英寸与约3平方英寸之间,例如在约1平方英寸与约2平方英寸之间,这取决于期望的电容。主要主体480具有主轴X,主轴X大体上平行于基板支撑件118的第二表面122。延伸部482以相对于主轴X大体上垂直的方式从主体480的上表面481突出,并且在延伸部482的上表面483上接触第二表面122。因此,主要主体480的上表面481不直接接触基板支撑件118的第二表面122,并且以与延伸部482的高度E相等的距第二表面122的距离设置。在一个实施方式中,上表面481、483是大体上平坦的。
当紧固接地带130时,主要主体480进一步在主要主体480的下表面485上接触第二夹持构件364。在一个实施方式中,下表面485是大体上平坦的。在另一个实施方式中,下表面485具有大体上平行于第二表面122的平坦第一部分431和相对于第二表面122以角度α1定向的第二部分433。例如,第二部分433相对于第一部分431以在约0度与约45度之间的角度α1定向。在一个实施方式中,下表面485进一步包括凹槽(未示出),所述凹槽形成在下表面485中并且与在第二夹持构件364的上表面487上形成的凸起(未示出)匹配,或反之亦然。在下表面485和上表面487中形成的凹槽和凸起经成形和依一定尺寸制造以适应接地带130的尺寸,从而形成袋部(pocket),其中接地带130被支撑件连接器132更牢固地紧固。
在一个实施方式中,第二夹持构件364的上表面487大体上平行于第一夹持构件362的下表面485。在一个实施方式中,上表面487具有平坦第一部分435和第二部分437,平坦第一部分435大体上平行于下表面485,第二部分437由径向曲线(radial curve)限定,以当基板支撑件118在原始位置与处理位置之间升高和降低时适应接地带130的折叠。在其他实施方式中,第二部分437是相对于第一部分435以在约0度与约45度之间的角度α2设置的平坦表面。第二夹持构件364进一步包括面向腔室底部108的下表面489。在一个实施方式中,下表面489是大体上平坦的。
第一夹持构件362和第二夹持构件364各自包括至少一组紧固件孔,所述至少一组紧固件孔适于接收紧固件(诸如螺栓、螺钉或类似物)。例如,第一夹持构件362包括第一组紧固件孔456,第一组紧固件孔456适于接收至少一个紧固件466,以用于将第一夹持构件362耦接至基板支撑件118。第一组紧固件孔456穿过第一夹持构件362的主要主体480和延伸部482设置。在一个实施方式中,第一夹持构件362进一步包括第二组紧固件孔458,第二组紧固件孔458与穿过第二夹持构件364设置的第三组紧固件孔460对准。第二组紧固件孔458和第三组紧固件孔460适于接收至少一个紧固件468,以用于将第二夹持构件364耦接到第一夹持构件362。在一个实施方式中,第二组紧固件孔458仅穿过第一夹持构件362的主要主体480设置,而不穿过延伸部482设置。在一个实施方式中,第一夹持构件362仅具有一组紧固件孔458,所述一组紧固件孔458经对准并且适于接收至少一个紧固件468,以用于将第一夹持构件362耦接到基板支撑件118并且耦接到第二夹持构件364。上述的一组或多组紧固件孔设置在第一夹持构件362和第二夹持构件364的周边边缘附近,使得紧固件466、468不接触紧固在第一夹持构件362与第二夹持构件364之间的接地带130。
图4B更详细地图示腔室连接器134。在一个实施方式中,腔室连接器134的第一夹持构件372和第二夹持构件374中的每一者具有大体上平行于腔室底部108的主轴X。在一个实施方式中,第一夹持构件372的上表面491和第二夹持构件374的下表面499是大体上平坦的。在一个实施方式中,第一夹持构件372的下表面495和第二夹持构件374的上表面497中的每一者具有第一部分与第二部分,第一部分大体上平行于腔室底部108,第二部分以相对于第一部分的某个角度定向。例如,下表面495具有大体上平行的第一部分421和相对于第一部分421以在约0度与约45度之间的角度β1定向的第二部分423。类似地,上表面497具有大体上平行的第一部分425和相对于第一部分425以在约0度与约45度之间的角度β2定向的第二部分427。
在一个实施方式中,下表面495进一步包括凹槽(未示出),所述凹槽形成在下表面495中并且与在上表面497上形成的凸起(未示出)匹配,或反之亦然。在下表面495和上表面497中形成的凹槽和凸起经成形和依一定尺寸制造以适应接地带130的尺寸,从而形成袋部,其中接地带130被腔室连接器134更牢固地紧固。进一步预期的是,腔室连接器134的尺寸、形状和配置可与支撑件连接器132大体上相似。
与支撑件连接器132相似,第一夹持构件372和第二夹持构件374各自包括至少一组紧固件孔,所述至少一组紧固件孔适于接收紧固件(诸如螺栓、螺钉或类似物)。例如,第二夹持构件374包括第一组紧固件孔446,第一组紧固件孔446适于接收至少一个紧固件462,以用于将第二夹持构件374耦接至腔室底部108。在一个实施方式中,第二夹持构件374进一步包括第二组紧固件孔448,第二组紧固件孔448与穿过第一夹持构件372设置的第三组紧固件孔450对准。第二组紧固件孔448和第三组紧固件孔450适于接收至少一个紧固件464,以用于将第二夹持构件374耦接到第一夹持构件372。在一个实施方式中,第二夹持构件374仅具有一组紧固件孔448,所述一组紧固件孔448经对准并且适于接收至少一个紧固件464,以用于将第二夹持构件374耦接到腔室底部108并且耦接到第一夹持构件372。上述的一组或多组紧固件孔设置在第一夹持构件372和第二夹持构件344的周边边缘附近,使得紧固件462、464不接触紧固在第一夹持构件372和第二夹持构件344之间的接地带130。
通常,接地带组件150的部件由导电材料(诸如铝、镍、镍合金或类似物)形成。在一个实施方式中,第一夹持构件362、372和第二夹持构件364、374进一步包括在第一夹持构件362、372和第二夹持构件364、374的期望表面上形成的介电涂层490。介电涂层490使支撑件连接器132和/或腔室连接器134能够沿着由接地带组件150提供的电流返回路径用作电容器。
在一个实施方式中,介电涂层490在支撑件连接器132和/或腔室连接器134的表面上形成,这些表面经配置以接触并且紧固在这些表面之间的接地带130。例如,介电涂层490在第一夹持构件362的下表面485和第二夹持构件364的上表面487上形成。替代地或附加地,介电涂层490在第一夹持构件372的下表面495和第二夹持构件374的上表面497上形成。除了经配置以接触接地带130的表面之外,介电涂层490也可以可选地在第二夹持构件364的下表面489和/或第一夹持构件372的上表面491上形成。在下表面489和/或上表面491上形成的介电涂层490可进一步用于调制接地带组件150的部件的电容特性。
介电涂层490由任何合适的介电材料形成,包括但不限于聚四氟乙烯(PTFE),聚醚醚酮(PEEK)、特氟隆、氧化钇或类似物。在一些实施方式中,介电涂层490通过刷涂(spreading coating)形成。在一个实施方式中,通过阳极氧化支撑件连接器132和腔室连接器134的期望表面来形成介电涂层490。例如,介电涂层490可由阳极氧化铝形成。
在一个实施方式中,介电涂层490的厚度在约10μm与约100μm之间,例如在约20μm与约80μm之间,例如在约40μm与约60μm之间。例如,介电涂层490具有约50μm的厚度。在一个实施方式中,介电涂层490进一步具有在约0μm与约5μm之间,例如在约2μm与约4μm之间的表面粗糙度值。通过调制介电涂层490的厚度和表面粗糙度,可精确地控制支撑件连接器132和腔室连接器134的电容特性,从而能够调制跨接地带组件150的长度的阻抗并且最终调制电压电势差。例如,通过减小在支撑件连接器132或腔室连接器134上形成的介电涂层490的厚度,可在其中增大部件的电容,从而减小跨接地带组件150的总阻抗并且造成减小在基板支撑件118与腔室主体108之间的电压电势差。
图5是接地带组件550的横截面图。接地带组件550与接地带组件150大体上相似,但是包括两个接地带130、131,两个接地带130、131在接合部596处通过介电紧固件592以重叠的方式耦接在一起。接地带130在顶端152处耦接至支撑件连接器132,并且接地带131在底端154处耦接至腔室连接器134。支撑件连接器132和腔室连接器134大体上类似于上述实施方式,并且可包括在支撑件连接器132和腔室连接器134的期望表面上形成的介电涂层490。例如,介电涂层490形成在支撑件连接器132和腔室连接器134的表面上,当接地带130、131被夹持在支撑件连接器132和腔室连接器134中时接触接地带130、131。
在一个实施方式中,介电紧固件592包括螺栓、螺钉或类似物和匹配的螺母,以将接地带130、131在这些元件之间耦接。两个或更多个板594可进一步在接合部597处设置在接地带130、131的相对侧上,以将接地带130、131抵靠彼此固定。板594可由任何合适的金属材料形成,包括但不限于不锈钢、铝、镍或类似物。尽管在图5中示出为螺钉或螺栓,但是介电紧固件592通常是任何合适的耦接机构。
介电紧固件592由任何合适的介电材料形成,包括但不限于PTFE、PEEK、Torlon或类似物。在一个实施方式中,介电紧固件592由与介电涂层490相同的材料形成。与介电涂层490相似,介电紧固件592沿着由接地带组件550提供的电流返回路径用作电容器。通过调制介电紧固件592的厚度和介电紧固件592与接地带130、131之间的接触面积,可精确地控制介电紧固件592的电容特性,从而能够进一步调制跨接地带组件550的长度的阻抗。在一个实施方式中,除了支撑件连接器132和/或腔室连接器134(支撑件连接器132和/或腔室连接器134具有在支撑件连接器132和/或腔室连接器134上形成的介电涂层490)之外,介电紧固件592也用作电容器。在一个实施方式中,介电紧固件592代替支撑件连接器132和/或腔室连接器134而被用作电容器。因此,接地带组件550可具有在沿着接地带组件550的一个或多个位置处的电容器的任何组合。
在常规的等离子体处理腔室的操作中,基板支撑件提供用于向气体分配板和基板支撑件自身供应的RF功率的返回路径,而在基板支撑件与腔室主体的周围内表面之间产生电压电势差。此电势差无意中在基板支撑件与周围表面(例如腔室壁)之间产生电弧。电势差的大小和因此在基板支撑件与腔室壁之间的电弧放电的量部分地取决于基板支撑件的电阻和尺寸。电弧放电是有害的,并且导致颗粒污染、膜沉积差异、基板损坏、腔室部件损坏、产量损失和***停机时间。
利用耦接到基板支撑件和腔室主体的接地带为供应给基板支撑件或气体分配板的RF功率提供替代的RF返回路径,从而降低在基板支撑件与腔室主体之间产生电弧的可能性。然而,常规的接地带组件仍然沿常规的接地带组件意图产生的替代RF返回路径提供显著的电阻和阻抗,而在基板支撑件与腔室主体之间形成足够的电压电势差,以在基板支撑件与腔室主体之间产生电弧。
通过在接地带连接器上形成介电层并且将连接器用作电容器,显著地减小在基板支撑件与腔室主体之间的电压电势差,从而提高RF接地效率。如此一来,减小的电压电势差消除或减小在基板支撑件与腔室主体之间的电弧产生。
此外,减小的电压电势差减少在处理期间寄生等离子体的形成。在沉积工艺期间,所产生的等离子体通常泄漏到腔室的其他部分,成为寄生等离子体,寄生等离子体在各种腔室部件(诸如腔室壁、腔室底部、基板支撑件和复数个接地带)上形成不期望的膜。寄生等离子体的形成通常发生在基板支撑件或气体分配板的外边缘与周围的腔室壁之间或在基板支撑件下方。寄生等离子体是有害的,因为这样的等离子体对沉积在基板上的薄膜的等离子体均匀性产生负面影响,并且可能加速腔室部件(例如接地带本身)的侵蚀。在处理期间减少或消除寄生等离子体的形成因此延长接地带130以及其他腔室部件的寿命。
虽然前述内容针对本公开内容的实施方式,但在不背离本公开内容的基本范围的情况下,可设计本公开内容的其他与进一步的实施方式,并且本公开内容的范围由所附的权利要求书确定。
Claims (15)
1.一种基板处理腔室,包括:
腔室主体,所述腔室主体包含:
一个或多个腔室壁,所述一个或多个腔室壁至少部分地限定工艺空间;和
腔室底部,所述腔室底部耦接至所述一个或多个腔室壁,所述腔室底部具有耦接到所述腔室底部的腔室连接器,所述腔室连接器进一步包含:
第一夹持构件,所述第一夹持构件通过一个或多个紧固件耦接到第二夹持构件;
基板支撑件,所述基板支撑件设置在所述工艺空间中,所述基板支撑件具有耦接到所述基板支撑件的支撑件连接器,所述支撑件连接器进一步包含:
第一夹持构件,所述第一夹持构件通过一个或多个紧固件耦接到第二夹持构件;和
接地带,所述接地带具有第一端和第二端,所述第一端在所述支撑件连接器处耦接至所述基板支撑件,并且所述第二端在所述腔室连接器处耦接至所述腔室底部,其中经配置以接触所述接地带的所述支撑件连接器和/或所述腔室连接器的一个或多个表面具有在所述一个或多个表面上形成的介电涂层。
2.如权利要求1所述的腔室,其中所述介电涂层由阳极氧化铝形成。
3.如权利要求1所述的腔室,其中所述介电涂层由PTFE形成。
4.如权利要求1所述的腔室,其中所述介电涂层的厚度在约10μm与约100μm之间。
5.如权利要求2所述的腔室,其中所述介电涂层的厚度在约10μm与约100μm之间。
6.如权利要求1所述的腔室,其中所述介电涂层的表面粗糙度在约0与约5μm之间。
7.如权利要求2所述的腔室,其中所述介电涂层的表面粗糙度在约0与约5μm之间。
8.如权利要求1所述的腔室,其中进一步在没有配置为接触所述接地带的所述支撑件连接器和/或所述腔室连接器的一个或多个表面上形成所述介电涂层。
9.一种接地带组件,包括:
腔室连接器,所述腔室连接器具有在所述腔室连接器的一个或多个表面上形成的介电涂层;
支撑件连接器,所述支撑件连接器具有在所述支撑件连接器的一个或多个表面上形成的介电涂层;和
接地带,所述接地带具有第一端和第二端,所述第一端耦接至所述支撑件连接器,并且所述第二端耦接至所述腔室连接器,其中所述腔室连接器和所述支撑件连接器用作电容器。
10.如权利要求9所述的接地带组件,其中所述支撑件连接器和所述腔室连接器由铝形成。
11.如权利要求10所述的接地带组件,其中所述介电涂层由阳极氧化铝形成。
12.如权利要求11所述的接地带组件,其中所述介电涂层的厚度在约10μm与约100μm之间。
13.如权利要求10所述的接地带组件,其中所述介电涂层由PTFE形成。
14.如权利要求9所述的接地带组件,其中所述腔室连接器和所述支撑件连接器中的每一者包括由一个或多个紧固件耦接在一起的第一夹持构件和第二夹持构件。
15.一种接地带组件,包括:
腔室连接器;
支撑件连接器;和
接地带,所述接地带具有第一端和第二端,所述第一端耦接到所述支撑件连接器,并且所述第二端耦接到所述腔室连接器,所述接地带的所述第一端和所述第二端由介电材料形成,其中所述腔室连接器和所述支撑件连接器用作在所述第一端和所述第二端处的电容器。
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TW202102066A (zh) | 2021-01-01 |
KR20210148406A (ko) | 2021-12-07 |
WO2020222764A1 (en) | 2020-11-05 |
JP2022537246A (ja) | 2022-08-25 |
JP7446335B2 (ja) | 2024-03-08 |
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