CN113964188A - 横向双扩散金属氧化物半导体场效应管及其制作方法 - Google Patents

横向双扩散金属氧化物半导体场效应管及其制作方法 Download PDF

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CN113964188A
CN113964188A CN202111571321.3A CN202111571321A CN113964188A CN 113964188 A CN113964188 A CN 113964188A CN 202111571321 A CN202111571321 A CN 202111571321A CN 113964188 A CN113964188 A CN 113964188A
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余山
赵东艳
王于波
陈燕宁
付振
刘芳
王凯
吴波
邓永峰
刘倩倩
郁文
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State Grid Information and Telecommunication Co Ltd
Beijing Smartchip Microelectronics Technology Co Ltd
Beijing Core Kejian Technology Co Ltd
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Beijing Smartchip Microelectronics Technology Co Ltd
Beijing Core Kejian Technology Co Ltd
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Abstract

本发明涉及半导体技术领域，提供一种横向双扩散金属氧化物半导体场效应管及其制作方法。所述横向双扩散金属氧化物半导体场效应管，包括衬底、栅极区、源极区、漏极区、P型体区以及位于所述衬底上的N型阱区、P型阱区和N型漂移区，还包括：离子注入形成的P型漂移区；所述P型漂移区位于所述N型阱区内，所述P型漂移区与所述P型体区之间存在预设距离。本发明在N型阱区内增加P型漂移区，P型漂移区与N型阱区的接触面构成PN结，P型漂移区与N型漂移区形成双重RESURF结构，降低器件的表面电场，并且能够承担更高的击穿电压，维持较低的导通电阻。

Description

横向双扩散金属氧化物半导体场效应管及其制作方法
技术领域
本发明涉及半导体技术领域，具体地涉及一种横向双扩散金属氧化物半导体场效应管以及一种横向双扩散金属氧化物半导体场效应管的制作方法。
背景技术
双扩散金属氧化物半导体场效应管(Double-diffused MOS，简称DMOS)具有耐压高、功耗低、大电流驱动能力等特点，广泛采用于电源管理电路中。双扩散金属氧化物半导体场效应管主要有两种类型，垂直双扩散金属氧化物半导体场效应管（Vertical Double-diffused MOSFET，简称VDMOSFET）和横向双扩散金属氧化物半导体场效应管（LateralDouble-diffused MOSFET，简称LDMOSFET）。
对于LDMOSFET，特征导通电阻(Specific on-Resistance，Rsp)和击穿电压(Breakdown Voltage，BV)是两个重要的指标，其外延层的厚度、掺杂浓度、漂移区的长度是最重要的特性参数。通常，可以通过增加沟道长度和漂移区的长度来提高击穿电压，但是这样会增加LDMOSFET芯片的面积和导通电阻。由于高击穿电压和低特征导通电阻之间存在矛盾关系，现有的LDMOSFET无法满足应用的要求。目前，亟需研究一种高击穿电压而维持较低导通电阻的LDMOSFET。
发明内容
本发明的目的是提供一种横向双扩散金属氧化物半导体场效应管及其制作方法，其提供高击穿电压且维持较低导通电阻。
为了实现上述目的，本发明一方面提供一种横向双扩散金属氧化物半导体场效应管，包括衬底、栅极区、源极区、漏极区、P型体区以及位于所述衬底上的N型阱区、P型阱区和N型漂移区，还包括：离子注入形成的P型漂移区；所述P型漂移区位于所述N型阱区内，所述P型漂移区与所述P型体区之间存在预设距离。
进一步地，所述P型漂移区包括多个相互独立的掺杂块，所述多个相互独立的掺杂块呈阵列排布。
进一步地，所述掺杂块的形状为圆形、方形、六边形或八边形。
进一步地，所述P型漂移区中掺杂块的数量和深度根据所述横向双扩散金属氧化物半导体场效应管所需承受的击穿电压确定。
进一步地，所述P型漂移区与所述P型体区之间的预设距离根据所述P型漂移区的掺杂浓度和所述P型体区的掺杂浓度确定。
进一步地，还包括：N型埋层和P型外延层；所述N型埋层位于所述衬底与所述P型外延层之间，所述P型外延层位于所述N型阱区的下方。
进一步地，所述P型阱区包括：第一P型阱区和第二P型阱区，所述第一P型阱区和第二P型阱区分别位于所述N型阱区的两侧并与所述N型阱区相接；所述P型体区和所述N型漂移区位于所述N型阱区的上方；所述N型漂移区包括第一N型漂移区和第二N型漂移区，所述第一N型漂移区和第二N型漂移区分别位于所述P型体区的两侧并与所述P型体区相接。
进一步地，所述第一N型漂移区和第二N型漂移区与所述漏极区相接，所述P型体区与所述源极区相接。
本发明另一方面提供一种横向双扩散金属氧化物半导体场效应管的制作方法，所述方法包括：
在半导体衬底的选定区域中形成N型阱区和P型阱区；
在半导体衬底的选定区域中形成P型体区和N型漂移区；所述N型漂移区与所述P型体区横向接触，并与所述N型阱区纵向接触；
采用离子注入工艺在所述N型阱区中形成P型漂移区。
进一步地，所述采用离子注入工艺在所述N型阱区中形成P型漂移区，包括：采用光刻工艺在所述N型阱区中形成P型漂移区的掺杂块的图形；采用离子注入工艺在所述掺杂块的图形区域注入掺杂元素离子；对离子注入后形成的P型漂移区进行退火处理。
进一步地，所述方法还包括：在形成N型阱区和P型阱区之前，在半导体衬底上形成N型埋层和P型外延层。
进一步地，所述方法还包括：在形成P型体区和N型漂移区之后，在所述P型体区的上方形成源极区，在所述N型漂移区的上方形成漏极区，在所述P型体区与所述N型漂移区接触的界面上方形成栅极区。
本发明提供的横向双扩散金属氧化物半导体场效应管，在N型阱区内增加P型漂移区，P型漂移区与N型阱区的接触面构成PN结，P型漂移区与N型漂移区形成双重RESURF(Reduced SURface Field，降低表面电场）结构，降低器件的表面电场，并且能够承担更高的击穿电压，维持较低的导通电阻。
此外，本发明在P型漂移区中设置多个相互独立的掺杂块，通过改变掺杂块的形状和排布增加P型漂移区与N型阱区形成的PN结的面积，从而增加PN耗尽区面积，进一步提高器件的击穿电压。
本发明实施方式的其它特征和优点将在随后的具体实施方式部分予以详细说明。
附图说明
附图是用来提供对本发明实施方式的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明实施方式，但并不构成对本发明实施方式的限制。在附图中：
图1是本发明实施方式提供的横向双扩散金属氧化物半导体场效应管的结构示意图；
图2是本发明实施方式提供的横向双扩散金属氧化物半导体场效应管的掺杂块的排布示意图；
图3是本发明实施方式提供的横向双扩散金属氧化物半导体场效应管的制作方法的流程图。
附图标记说明
100-衬底，101-栅极区，102源极区，103-漏极区，104-P型体区，
105a –第一N型漂移区，105b –第二N型漂移区，106-N型阱区，
107a-第一P型阱区，107b-第二P型阱区，108- P型漂移区，
109- P型外延层，110- N型埋层，111- 浅槽隔离区。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
图1是本发明实施方式提供的横向双扩散金属氧化物半导体场效应管的结构示意图。如图1所示，本实施方式的横向双扩散金属氧化物半导体场效应管（以下简称LDMOSFET），包括衬底100、栅极区101、源极区102、漏极区103、浅槽隔离区111、P型体区104以及位于衬底100上的N型阱区106、P型阱区（107a/107b）和N型漂移区（105a/105b）。本实施方式的LDMOSFET还包括P型漂移区108。所述P型漂移区108设置于N型阱区106内，P型漂移区108与P型体区104之间存在预设距离，即P型漂移区108的界面与P型体区104的界面不接触，两者之间保持一定距离。P型漂移区108与P型体区104之间的预设距离可以根据P型漂移区108的掺杂浓度和P型体区104的掺杂浓度确定。LDMOSFET承受高压的原理在于轻掺杂漂移区的存在，在高漏压工作时，沟道区只分担很少部分的电压降，而漂移区则承担了大部分的电压降。本发明实施方式提供的LDMOSFET，在N型阱区内增加轻掺杂的P型漂移区，P型漂移区与N型阱区的接触面构成PN结，P型漂移区与N型漂移区形成双重RESURF (ReducedSURface Field，降低表面电场）结构，降低器件的表面电场，并且能够承担更高的击穿电压，维持较低的导通电阻。
所述P型漂移区108包括多个相互独立的掺杂块，多个掺杂块呈阵列排布。图2是本发明实施方式提供的横向双扩散金属氧化物半导体场效应管的掺杂块的排布示意图。如图2所示，所述掺杂块的形状为圆形、方形、六边形或八边形。图2中2a、2b、2c、2d展示出四种不同形状的掺杂块的排布方式，其中2a表示六个圆形的掺杂块呈3*2阵列排布；2b表示九个正方形的掺杂块呈3*3阵列排布；2c表示八个长方形的掺杂块呈2*4阵列排布；2d表示12个六边形的掺杂块呈3*4阵列排布。在P型漂移区整体面积相同的情况下，图2所示的多个独立掺杂块呈阵列排布的方式，各个掺杂块图形的总周长远大于P型漂移区外沿的周长，即各个掺杂块与N型阱区的总接触面积远大于P型漂移区外沿与N型阱区的接触面积。由于源极与漏极之间的电压与PN结的耗尽区面积呈正比关系，耗尽区面积越大，源极与漏极之间所能承受的电压就越大，LDMOSFET器件的击穿电压就越大。本实施方式在P型漂移区中设置多个相互独立的掺杂块，通过改变掺杂块的形状和排布增加P型漂移区与N型阱区形成的PN结的面积，从而增加PN耗尽区面积，进一步提高LDMOSFET器件的击穿电压。
可选实施方式中，所述P型漂移区108中掺杂块的数量和深度可以根据LDMOSFET器件所需承受的击穿电压来确定。例如，需要击穿电压更高的LDMOSFET器件，则加大P型漂移区中掺杂块的数量和深度，以增加PN耗尽区面积，掺杂块的数量值或深度值，可以计算得到，具体的计算方式不是本发明的重点。
如图1所示，本实施方式的LDMOSFET还包括N型埋层110和P型外延层109， N型埋层110位于衬底100与P型外延层109之间， P型外延层109位于N型阱区106的下方。增加N型埋层110和P型外延层109，可优化PN结的击穿电压，同时降低导通电阻。所述P型阱区包括：第一P型阱区107a和第二P型阱区107b，第一P型阱区107a和第二P型阱区107b分别设置于N型阱区106的两侧并与N型阱区106相接。所述P型体区104和N型漂移区设置于N型阱区106的上方。所述N型漂移区包括第一N型漂移区105a和第二N型漂移区105b，第一N型漂移区105a和第二N型漂移区105b分别位于P型体区104的两侧并与P型体区104相接。所述第一N型漂移区105a和第二N型漂移区105b与漏极区103相接，所述P型体区104与源极区102相接。栅极区101位于P型体区104与N型漂移区相接触的界面上方。本实施方式提供一种具有双重补偿结构的高压RESURF LDMOS器件，相较于普通RESURF LDMOS器件结构，降低了表面电场，缓解了器件击穿电压与导通电阻的矛盾关系，极大的改良了器件的性能。
本发明实施方式提供的LDMOSFET，在N型阱区内增加P型漂移区，P型漂移区与N型阱区的接触面构成PN结，P型漂移区与N型漂移区形成双重RESURF (Reduced SURfaceField，降低表面电场）结构，进一步降低器件的表面电场，提高器件的耐压能力，而且降低器件的导通电阻，在维持较低导通电阻的同时提高击穿电压。该结构的LDMOSFET，源极与漏极之间的电压与PN结的耗尽区面积呈正比关系，耗尽区面积越大，源极与漏极之间所能承受的电压就越大，通过改变掺杂块的形状和排布来增加PN结的面积，从而提高LDMOSFET器件的击穿电压。
图3是本发明实施方式提供的横向双扩散金属氧化物半导体场效应管的制作方法的流程图。参照图1和图3，本实施方式提供一种横向双扩散金属氧化物半导体场效应管的制作方法，所述方法包括：
S1、在半导体衬底的选定区域中形成N型阱区和P型阱区；
S2、在半导体衬底的选定区域中形成P型体区和N型漂移区；所述N型漂移区与所述P型体区横向接触，并与所述N型阱区纵向接触。
S3、采用离子注入工艺在N型阱区中形成P型漂移区。所述P型漂移区与P型体区不接触，两者之间保持预设距离，该预设距离可以根据P型漂移区的掺杂浓度和P型体区的掺杂浓度确定。
采用离子注入工艺形成P型漂移区，具体为：采用光刻工艺在所述N型阱区中形成P型漂移区的掺杂块的图形（通过掩膜版将掺杂块的图形转移到光刻胶）；采用离子注入工艺在所述掺杂块的图形区域注入掺杂元素离子，例如硼或铟；去除光刻胶；对离子注入后形成的P型漂移区进行退火处理。
所述方法步骤还包括：在形成N型阱区和P型阱区之前，在半导体衬底上形成N型埋层和P型外延层；在形成P型体区和N型漂移区之后，在P型体区的上方形成源极区，在N型漂移区的上方形成漏极区，在P型体区与N型漂移区接触的界面上方形成栅极区。
本实施方式提供的横向双扩散金属氧化物半导体场效应管的制作方法，具体细节和技术效果可以参阅上述LDMOSFET实施例中对应的相关描述和效果进行理解，此处不再赘述。
以上结合附图详细描述了本发明的可选实施方式，但是，本发明实施方式并不限于上述实施方式中的具体细节，在本发明实施方式的技术构思范围内，可以对本发明实施方式的技术方案进行多种简单变型，这些简单变型均属于本发明实施方式的保护范围。

Claims (12)

1.一种横向双扩散金属氧化物半导体场效应管，包括衬底、栅极区、源极区、漏极区、P型体区以及位于所述衬底上的N型阱区、P型阱区和N型漂移区，其特征在于，还包括：离子注入形成的P型漂移区；
所述P型漂移区位于所述N型阱区内，所述P型漂移区与所述P型体区之间存在预设距离。
2.根据权利要求1所述的横向双扩散金属氧化物半导体场效应管，其特征在于，所述P型漂移区包括多个相互独立的掺杂块，所述多个相互独立的掺杂块呈阵列排布。
3.根据权利要求2所述的横向双扩散金属氧化物半导体场效应管，其特征在于，所述掺杂块的形状为圆形、方形、六边形或八边形。
4.根据权利要求2所述的横向双扩散金属氧化物半导体场效应管，其特征在于，所述P型漂移区中掺杂块的数量和深度根据所述横向双扩散金属氧化物半导体场效应管所需承受的击穿电压确定。
5.根据权利要求1所述的横向双扩散金属氧化物半导体场效应管，其特征在于，所述P型漂移区与所述P型体区之间的预设距离根据所述P型漂移区的掺杂浓度和所述P型体区的掺杂浓度确定。
6.根据权利要求1所述的横向双扩散金属氧化物半导体场效应管，其特征在于，还包括：N型埋层和P型外延层；
所述N型埋层位于所述衬底与所述P型外延层之间，所述P型外延层位于所述N型阱区的下方。
7.根据权利要求1所述的横向双扩散金属氧化物半导体场效应管，其特征在于，所述P型阱区包括：第一P型阱区和第二P型阱区，所述第一P型阱区和第二P型阱区分别位于所述N型阱区的两侧并与所述N型阱区相接；
所述P型体区和所述N型漂移区位于所述N型阱区的上方；
所述N型漂移区包括第一N型漂移区和第二N型漂移区，所述第一N型漂移区和第二N型漂移区分别位于所述P型体区的两侧并与所述P型体区相接。
8.根据权利要求7所述的横向双扩散金属氧化物半导体场效应管，其特征在于，所述第一N型漂移区和第二N型漂移区与所述漏极区相接，所述P型体区与所述源极区相接。
9.一种横向双扩散金属氧化物半导体场效应管的制作方法，其特征在于，所述方法包括：
在半导体衬底的选定区域中形成N型阱区和P型阱区；
在半导体衬底的选定区域中形成P型体区和N型漂移区；所述N型漂移区与所述P型体区横向接触，并与所述N型阱区纵向接触；
采用离子注入工艺在所述N型阱区中形成P型漂移区。
10.根据权利要求9所述的横向双扩散金属氧化物半导体场效应管的制作方法，其特征在于，所述采用离子注入工艺在所述N型阱区中形成P型漂移区，包括：
采用光刻工艺在所述N型阱区中形成P型漂移区的掺杂块的图形；
采用离子注入工艺在所述掺杂块的图形区域注入掺杂元素离子；
对离子注入后形成的P型漂移区进行退火处理。
11.根据权利要求9所述的横向双扩散金属氧化物半导体场效应管的制作方法，其特征在于，所述方法还包括：
在形成N型阱区和P型阱区之前，在半导体衬底上形成N型埋层和P型外延层。
12.根据权利要求9所述的横向双扩散金属氧化物半导体场效应管的制作方法，其特征在于，所述方法还包括：
在形成P型体区和N型漂移区之后，在所述P型体区的上方形成源极区，在所述N型漂移区的上方形成漏极区，在所述P型体区与所述N型漂移区接触的界面上方形成栅极区。
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