CN113950541B - 在晶片的正面上沉积外延层的方法和实施该方法的装置 - Google Patents
在晶片的正面上沉积外延层的方法和实施该方法的装置 Download PDFInfo
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Abstract
用于在具有取向切口的晶片的正面上沉积外延层的装置,包括用于保持并使具有基座支撑轴和基座支撑臂的基座旋转的机构;和由基座支撑臂保持并具有向内指向的突起部的环;以及包括基座环的基座,所述基座环具有用于在晶片的背面的边缘区域中支撑晶片的支撑面和与该支撑面相邻的基座环的台阶状外边界,支撑面具有向内指向的突起部。
Description
技术领域
本发明的主题是一种用于在由单晶材料构成的晶片的正面上沉积外延层的方法,该方法包括将所提供的晶片布置在基座上,并通过热辐射加热至沉积温度,将沉积气体引导穿过晶片的正面。此外,本发明的主题是一种用于在由单晶材料构成的晶片的正面上沉积外延层的装置。
背景技术
通常在CVD反应器中,经常是在单晶片反应器中,通过CVD(化学气相沉积)在晶片的正面上进行外延层的沉积。例如在US 2014/0 251 208 A1中描述了这种CVD反应器。由单晶片反应器在上部和下部圆顶之间提供反应空间,在该反应空间中,基座通过基座支撑销上的基座支撑轴的基座支撑臂保持。基座和放置在上部的晶片通过设置在圆顶上方和下方的灯阵列的热辐射而被加热,同时沉积气体被引导穿过晶片的面向上部圆顶的正面。
US 2008/0118712 A1描述了一种基座,其包括基座环和基座底。基座环具有用于在晶片背面的边缘区域中支撑晶片的凸缘。基座环放置在基座底上,以便在晶片的正面沉积层。
US 2007/0227441 A1涉及在外延涂覆的硅晶片的边缘区域中厚度的周期性变化。这是由于外延层生长的速率不同。不同的生长速率与晶片正面的晶体取向有关。晶片的正面是晶片上外延层沉积在其上的那一面。为了使边缘区域中的外延层的厚度均匀化,US2007/0227441 A1提出了随着厚度变化的周期来改变基座的结构。
为了相同的目标,US 2015/0184314 A1提出了限制晶片的边缘区域的宽度。
该教导没有考虑以下事实:其中提到的厚度变化被认为是有问题的晶片在边缘区域中设置有取向切口。在正面具有〈100〉取向的硅晶片的情况下,取向切口通常位于外延层相对较快地生长的四个位置之一上,并标记四个〈110〉晶体方向之一。有时,取向切口也位于距此类位置45°,并标记四个〈100〉晶体方向之一。
本发明的目的是改善在边缘区域,特别是在切口区域中具有沉积的外延层的晶片的平坦度,并且同时减小边缘区域中厚度的周期性变化而无需为此必须改变基座或改变晶片边缘区域的形状。
本发明的目的通过权利要求中描述的方法和装置来实现。
关于根据本发明的方法的上述实施方案所指定的特征经适当修改后可以应用于根据本发明的装置。相反,关于根据本发明的装置的上述实施方案所指定的特征经适当修改后可以应用于根据本发明的方法。在附图的描述以及权利要求中阐明了根据本发明的实施方案的这些和其他特征。可以单独地或组合地实现各个特征作为本发明的实施方案。此外,它们可以描述可独立保护的有利设计。
附图说明
图1示出了具有取向切口(102)的晶片(101)。晶片(101)具有〈100〉取向。晶片(101)的上表面例如是(100)面。取向切口102标记四个〈110〉晶体方向之一,该四个〈110〉晶体方向以90°的间隔分布在晶片的周围,指向晶片边缘区域中的相应平面,在这些平面上,与在四个〈100〉晶体方向指向的边缘区域中的平面上相比,外延层以相对较高的速率生长。
图2与图1一致,示出了具有取向切口(202)的具有〈110〉取向的晶片201的俯视图。
具体实施方式
根据本发明的装置(图3)不仅包括基座(301),还包括用于保持并使具有基座支撑轴(302)和基座支撑臂(303)的基座(301)旋转的机构。此外,用于保持并使基座(301)旋转的机构可以包括晶片提升轴(304)和晶片提升销(305)。该装置的主要特征是环(306),其由基座支撑臂(303)保持并且布置在基座(301)下方而不与基座(301)直接接触。环(306)由基座支撑臂(303)保持,使得其不能沿其圆周方向移动。优选地,通过环(306)中的孔(402、502、602)***的基座支撑销(307)位于基座支撑臂(303)上。环(306)的上表面和基座(301)的下表面之间的距离优选地不小于5mm且不大于10mm。
图4示出了环(401)的俯视图,在所示的实施方案中,环(401)具有孔(402)和四个向内指向的突起部(403),这些突起部布置成以90°的间隔分布在圆周上。该实施方案适于在根据图3的装置中使用,用于在其中根据本发明,在具有〈100〉取向的晶片正面上沉积外延层。优选地,环(401)由石英玻璃构成,并且突起部(403)由在光谱的IR区域中具有低透射率的材料构成。在该区域中,基于10mm的材料厚度,突起部(403)的透射率优选为不超过20%,并且特别优选不超过5%。突起部(403)优选由不透明的石英玻璃构成。
图5示出了环(501)的俯视图,在所示的实施方案中,环(501)具有孔(502)和两个向内指向的突起部(503),这些突起部布置成以180°的间隔分布在圆周上。该实施方案适于在根据图3的装置中使用,用于在其中根据本发明,在具有〈110〉取向的晶片正面上沉积外延层。
优选地,环(401、501)的突起部(403、503)的内边缘(404、504)位于径向位置,其相对于环(401、501)的中心Z的距离不小于140mm,优选地不小于145mm,特别优选地为148mm至150mm。
图6示出了环(601)的俯视图,在所示的实施方案中,环(601)具有孔(602)和四个向内指向的突起部(603),这些突起部布置成以90°的间隔分布在圆周上。该实施方案适于在根据图3的装置中使用,用于在其中根据本发明,在具有〈100〉取向的晶片正面上沉积外延层。在所示的实施方案中,突起部(603)是T形的,并且每个包括腹板(604)和环段(605)。环段(605)具有径向长度和在圆周方向上的宽度。所述径向长度优选地不小于3mm且不大于8mm。以开口角度α表示,所述宽度优选地为不小于15°且不大于25°,特别优选地为20°。优选地,环(601)和/或腹板(604)由石英玻璃构成,而环段由在光谱的IR区域中具有低透射率的材料构成。在该区域中,基于10mm的材料厚度,环段(605)的透射率优选不大于20%,特别优选不大于5%。环段(605)优选地由不透明的石英玻璃构成。
图7和8示出了基座环(701、801),其具有支撑面(703、805)和相邻的台阶状边界(702、806)。根据本发明的基座环(701、801)的一个实施方案设想,所述支撑面具有向内指向的突出部。这意味着基座环(701、801)的支撑面(703、805)在方位角位置处的径向宽度W1大于在相对位置处的径向宽度W2。
另外,晶片(704、804)可以优选地位于基座环(701、801)中,使得具有支撑面的最大宽度W1(802)的位置与取向切口(803)的位置重合。
另外,与其余部分相邻的台阶状边界(图9,901)可以优选地实现为其具有向内指向的凸起(图9,902)。
优选地,与其余部分相邻的台阶状边界的向内指向的凸起(902)的方位角位置与支撑面的向内指向的突起部(403、503)的方位角位置相同。
为了在由单晶材料构成的晶片的正面上沉积外延层,优选地将晶片布置在所描述的装置中,使得晶片的取向切口具有与环的突起部相同的方位角位置。此后,通过热辐射使晶片达到沉积温度,所述热辐射被导向晶片的正面和背面,并且沉积气体被引导穿过晶片的正面。
所述沉积气体优选地包含稀释在载气(优选为氢)中的硅烷、氯硅烷或其混合物。
所述沉积温度理解为在给定边界条件下在晶片上沉积层的温度。
所描述的装置的方式确保选择性地降低导向晶片的背面的一部分热辐射的强度,结果是在晶片的边缘上的第一子区域比在相邻的第二子区域中被更弱地加热,在所述第一子区域中由于单晶材料的取向,在晶片的均匀温度下外延层的生长速率更高。
示例性实施方案的以上描述将被示例性地理解。因此,进行的公开首先使本领域技术人员能够理解本发明及其相关的优点,其次包括对所描述的结构和方法的改变和修改,这对本领域技术人员的理解也是显而易见的。因此,所有这样的改变和修改以及等同方式都将被权利要求的保护范围所覆盖。
图10示出了通过在外延中使用根据本发明的方法实现的效果。在此,以度[°]为单位的方位角坐标被绘制在x轴Dx上。y轴Dy在无量纲坐标中示出了层厚度,其沿晶片的周长测量。虚线A代表使用现有技术方法可以获得的高度曲线。实线B通过使用根据本发明的方法来实现。取向切口位于0°或360°位置。
Claims (5)
1.一种用于在具有取向切口的晶片的正面上沉积外延层的装置,其包括:
用于保持并使具有基座支撑轴和基座支撑臂的基座旋转的机构;和
由所述基座支撑臂保持并且布置在基座下方而不与基座直接接触的、并具有向内指向的突起部的环;以及
包括基座环的基座,所述基座环具有用于在所述晶片的背面的边缘区域中支撑所述晶片的支撑面以及所述基座环的与所述支撑面相邻的台阶状外边界,所述支撑面具有向内指向的突起部,并且与所述支撑面相邻的所述台阶状外边界在相同的方位角位置处具有向内指向的凸起,
其中所述环的突起部由选择性地降低穿过其的热辐射的强度的材料制成,结果是,支撑在所述基座上的晶片的边缘上的第一子区域与相邻的第二子区域相比,被更弱地加热,在所述第一子区域中由于单晶材料的取向,在所述晶片的均匀温度下所述外延层的生长速率更大。
2.根据权利要求1所述的装置,其特征在于,所述环由石英玻璃构成。
3.根据前述权利要求中任一项所述的装置,其特征在于,所述环具有两个或四个突起部。
4.一种用于在由单晶材料组成的晶片的正面上沉积外延层的方法,其包括:
提供具有取向切口的晶片;
将所述晶片布置在根据权利要求1至3中任一项所述的装置上,结果是所述晶片的取向切口具有与所述环的突起部相同的方位角位置;
通过热辐射将所述晶片加热到沉积温度,所述热辐射被导向所述晶片的正面和背面;
引导沉积气体穿过所述晶片的正面;以及
选择性地降低导向所述晶片的背面的一部分热辐射的强度,结果是在所述晶片的边缘上的第一子区域与相邻的第二子区域相比,被更弱地加热,在所述第一子区域中由于单晶材料的取向,在所述晶片的均匀温度下外延层的生长速率更大。
5.根据权利要求4所述的方法,其特征在于,将在光谱的IR区域具有低透射率的材料布置在热辐射的光束路径中,从而选择性地降低所述一部分热辐射的强度。
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