CN113851562A - Preparation method of weldable double-sided battery suitable for heterojunction MWT - Google Patents
Preparation method of weldable double-sided battery suitable for heterojunction MWT Download PDFInfo
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- CN113851562A CN113851562A CN202111450032.8A CN202111450032A CN113851562A CN 113851562 A CN113851562 A CN 113851562A CN 202111450032 A CN202111450032 A CN 202111450032A CN 113851562 A CN113851562 A CN 113851562A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000007639 printing Methods 0.000 claims abstract description 54
- 239000003292 glue Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000003466 welding Methods 0.000 claims abstract description 15
- 238000001035 drying Methods 0.000 claims abstract description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- 239000002002 slurry Substances 0.000 claims abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 22
- 238000009413 insulation Methods 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005553 drilling Methods 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 101100409194 Rattus norvegicus Ppargc1b gene Proteins 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a preparation method of a weldable double-sided battery suitable for heterojunction MWT, which is characterized in that a silk screen double-sided printing process is added before insulating glue is printed, firstly, a overprinting scheme is used for printing cathode dots, a layer of thin hole plugging slurry is printed, and punched holes are plugged and cannot transmit light; then, printing a back electrode by using low-temperature silver paste, and printing the back electrode on the upper surface of the plugging hole and the long grid line of the back electrode; and printing insulating glue at the position of the hole plugging electrode leading-out pad to insulate the negative electrode from the positive electrode, drying at the temperature of below 200 ℃, and finally connecting the positive electrode and the negative electrode at points, wherein the positive electrode and the negative electrode are separated by the insulating glue to obtain the MWT heterojunction assembly with the front-surface reversed-square-shaped back welding strip design. The invention utilizes the heterojunction low-temperature process, only needs screen printing to add one printing, synchronously prints the insulating glue, synchronously dries, can reduce the working procedures, and is perfectly combined with the heterojunction process.
Description
Technical Field
The invention relates to the field of MWT battery components, in particular to a preparation method of a weldable double-sided battery suitable for heterojunction MWT.
Background
MWT cells are very similar to conventional crystalline silicon solar cells. The conventional H-shaped battery only needs to use a tin-coated copper strip (a solder strip) and a main grid wire of a battery piece for welding to connect adjacent battery pieces in series, and the positive electrode point and the negative electrode point of the MWT battery are on the back side and are not on the same straight line, so that the positive electrode point and the negative electrode point cannot be interconnected linearly by using one solder strip.
Actually from the angle of actual production, it is not very suitable with traditional solder strip welding interconnection MWT battery, and the main reason is that the positive and negative electrodes of MWT battery are all at the back, and the stress that produces after the single face welding cooling can lead to the crooked bow piece of battery piece, and is easy broken, and the stress that conventional battery two-sided symmetrical welding caused can offset each other. In addition, the welding strip communicated with the negative electrode also considers the problem of insulation and isolation between the welding strip and the back aluminum of the battery piece.
The prior art has the problems that:
1. the welding strips are welded on the back side to form bent sheets, stress generated after the single-side welding and cooling can cause the bent arched sheets of the battery sheet, and the heterojunction process adopts a low-temperature process to reduce the bent sheets;
2. the process flow needs to print the insulating glue after the silk-screen printing is finished, the insulating glue is dried at low temperature at present, the perc process is a high-temperature process, the insulating glue is printed and dried after sintering, and the process flow needs to add a process and labor cost.
Disclosure of Invention
The invention provides a preparation method of a weldable double-sided battery suitable for heterojunction MWT (metal wrap through) in order to solve the problems in the prior art, and the preparation method utilizes a heterojunction low-temperature process, only needs screen printing to add one printing step, synchronously prints insulating glue, and synchronously dries, can reduce working procedures, and is perfectly combined with the heterojunction process.
The invention provides a preparation method of a weldable double-sided battery suitable for heterojunction MWT, which is characterized in that a silk screen double-sided printing process is added before insulating glue is printed, firstly, a overprinting scheme is used for printing cathode dots, a layer of thin hole plugging slurry is printed, and punched holes are plugged and cannot transmit light; then, printing a back electrode by using low-temperature silver paste, and printing the back electrode on the upper surface of the plugging hole and the long grid line of the back electrode; printing insulating glue on the leading-out pad position of the hole plugging electrode to insulate the cathode and the anode, and drying at the temperature of below 200 ℃; and finally, connecting the positive electrode and the negative electrode, and separating the positive electrode and the negative electrode through insulating glue to obtain the MWT heterojunction assembly with the front surface and the back surface in a reversed-square-shaped welding strip design.
The further improvement is that the hole plugging slurry is a low-temperature silver paste material. And printing the insulating glue twice at the position of the hole plugging electrode leading-out pad. Have the bubble in the insulation, at present can't avoid, subassembly lamination process has mobility, if the bubble overlaps to admit air easily and the evacuation is good to lead to subassembly lamination NG, so print 2 times and guarantee that the bubble does not overlap. The insulating glue is one or more of polyimide, epoxy resin and organic silicon system.
The complete preparation method comprises the steps of laser drilling, texturing, amorphous silicon coating, etching of the insulating ring, laser insulation, TCO deposition, silk screen double-sided printing, insulating glue printing, drying and testing which are sequentially carried out.
The preparation method comprises the following specific steps:
1) perforating the substrate using a laser;
2) texturing and cleaning: removing the damage layer and generating a suede;
3) coating amorphous silicon;
4) etching the insulating ring to insulate the hole;
5) laser insulation: and (3) grooving the periphery of the hole on the back by using laser, wherein the grooving depth is just enough to remove the amorphous silicon layer and the TCO film on the back, and the grooving size is a circle with the diameter of 2-10 mm.
6) Plating a front TCO film and a back TCO film to form a conductive layer;
6.1) plating the front intrinsic amorphous silicon (i- α -Si: H) the front side passivation effect is achieved, and the front side P-doped amorphous silicon (P-alpha-Si: H) forming built-in electric field
6.2) plating back intrinsic amorphous silicon (i- α -Si: H) the back surface is plated with N-doped amorphous silicon (p- α -Si: H) forming a back electric field.
7) And (3) printing a cathode dot by using a overprinting scheme, and printing a layer of thin hole plugging slurry to plug the punched hole and prevent light transmission.
8) And printing a back electrode by using low-temperature silver paste, and printing the back electrode on the plugging hole and the long grid line of the back electrode.
9) And printing insulating glue at the position of the hole plugging electrode leading-out pad to insulate the cathode from the anode.
10) Drying at below 200 deg.C.
11) And connecting the positive electrode and the negative electrode, and separating the positive electrode and the negative electrode through insulating glue to obtain the MWT heterojunction assembly with the front surface and the back surface being in a reversed-square shape and the welding strip being designed.
The invention has the beneficial effects that: the method has the advantages that a silk screen double-sided printing process is added in the printing process at low cost, perfect combination of double sides of the heterojunction and the MWT is achieved, the MWT technology can be utilized, the welding strip direction is used on the back of the MWT, the cost of tin paste and copper foil on the back of the heterojunction can be reduced, the comprehensive power generation capacity of the battery is improved, and accordingly the purpose of networking at a flat price is achieved.
Drawings
FIG. 1 is a comparative printing process.
Fig. 2 shows the connection mode of the anode and cathode points of the component.
Detailed Description
The invention is further described with reference to the following figures and detailed description.
The existing process flow is as follows: laser drilling, texturing, diffusion, SE, PSG removal, thermal oxidation, alkali polishing, annealing, front and back alumina deposition coating, sintering, testing, insulating glue printing and drying. The invention is modified on the basis that the method comprises the steps of laser drilling, texturing, amorphous silicon coating, etching an insulating ring, laser insulation, TCO (transparent conductive oxide) deposition, screen double-sided printing, insulating glue printing, drying and testing which are sequentially carried out as shown in figure 1.
The invention provides a preparation method of a weldable double-sided battery suitable for heterojunction MWT, which is characterized in that a silk screen double-sided printing process is added before insulating glue is printed, firstly, a overprinting scheme is used for printing cathode dots, a layer of thin hole plugging slurry is printed, and punched holes are plugged and cannot transmit light; then, printing a back electrode by using low-temperature silver paste, and printing the back electrode on the upper surface of the plugging hole and the long grid line of the back electrode; printing insulating glue on the leading-out pad position of the hole plugging electrode to insulate the cathode and the anode, and drying at the temperature of below 200 ℃; and finally, connecting the positive electrode and the negative electrode, and separating the positive electrode and the negative electrode through insulating glue to obtain the MWT heterojunction assembly with the front surface and the back surface in a reversed-square-shaped welding strip design.
The further improvement is that the hole plugging slurry is a low-temperature silver paste material. And printing the insulating glue twice at the position of the hole plugging electrode leading-out pad. Have the bubble in the insulation, at present can't avoid, subassembly lamination process has mobility, if the bubble overlaps to admit air easily and the evacuation is good to lead to subassembly lamination NG, so print 2 times and guarantee that the bubble does not overlap. The insulating glue is one or more of polyimide, epoxy resin and organic silicon system.
The complete preparation method comprises the steps of laser drilling, texturing, amorphous silicon coating, etching of the insulating ring, laser insulation, TCO deposition, silk screen double-sided printing, insulating glue printing, drying and testing which are sequentially carried out.
One specific embodiment of the present invention is as follows:
1) perforating the substrate using a laser;
2) texturing and cleaning: removing the damage layer and generating a suede;
3) coating amorphous silicon;
4) etching the insulating ring to insulate the hole;
5) laser insulation: and (3) grooving the periphery of the hole on the back by using laser, wherein the grooving depth is just enough to remove the amorphous silicon layer and the TCO film on the back, and the grooving size is a circle with the diameter of 2-10 mm.
6) Plating a front TCO film and a back TCO film to form a conductive layer;
6.1) plating the front intrinsic amorphous silicon (i- α -Si: H) the front side passivation effect is achieved, and the front side P-doped amorphous silicon (P-alpha-Si: H) forming built-in electric field
6.2) plating back intrinsic amorphous silicon (i- α -Si: H) the back surface is plated with N-doped amorphous silicon (p- α -Si: H) forming a back electric field.
7) And (3) printing a cathode point by using a overprinting scheme, and printing a layer of thin low-temperature silver paste slurry to block the punched hole and prevent the punched hole from transmitting light.
8) And printing a back electrode by using low-temperature silver paste, and printing the back electrode on the plugging hole and the long grid line of the back electrode.
9) The insulating glue is printed at the position of the hole plugging electrode leading-out pad, so that the negative electrode is insulated from the positive electrode, the insulating glue is generally used (polyimide, epoxy resin and organic silicon system), the printing is required for 2 times, bubbles exist in the insulation, the existing process cannot be avoided, the lamination process of the assembly has fluidity, and the bubbles are easy to enter air and are not well vacuumized to cause the lamination of the assembly NG if the bubbles are overlapped, so that the bubbles are printed for 2 times to ensure that the bubbles are not overlapped. The insulating glue is one or more of polyimide, epoxy resin and organic silicon system.
10) Drying at below 200 deg.C.
11) As shown in fig. 2, in the module end positive and negative electrode point connection mode, the positive and negative electrodes are connected in point, and are separated by the insulating glue, so as to obtain the MWT heterojunction module with the front surface shaped like a Chinese character 'hui' and the back surface welded belt.
While the invention has been described in terms of its preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.
Claims (8)
1. A preparation method of a weldable double-sided battery suitable for heterojunction MWT is characterized in that: adding a silk screen double-sided printing process before printing the insulating glue, firstly printing a cathode point by using a overprinting scheme, and printing a layer of thin hole plugging slurry to plug the punched holes and prevent light transmission; then, printing a back electrode by using low-temperature silver paste, and printing the back electrode on the upper surface of the plugging hole and the long grid line of the back electrode; printing insulating glue on the leading-out pad position of the hole plugging electrode to insulate the cathode and the anode, and drying at the temperature of below 200 ℃; and finally, connecting the positive electrode and the negative electrode, and separating the positive electrode and the negative electrode through insulating glue to obtain the MWT heterojunction assembly with the front surface and the back surface in a reversed-square-shaped welding strip design.
2. The method of manufacturing a weldable double sided battery for heterojunction MWT according to claim 1, characterized in that: the hole plugging slurry is a low-temperature silver paste material.
3. The method of manufacturing a weldable double sided battery for heterojunction MWT according to claim 1, characterized in that: and printing the insulating glue twice at the position of the hole plugging electrode leading-out pad.
4. A method of manufacturing a weldable double sided battery for heterojunction MWT according to claim 1 or 3, characterized in that: the insulating glue is one or more of polyimide, epoxy resin and organic silicon system.
5. The method of manufacturing a weldable double sided battery for heterojunction MWT according to claim 1, characterized in that: the complete preparation method comprises the steps of laser drilling, texturing, amorphous silicon coating, etching of the insulating ring, laser insulation, TCO deposition, silk screen double-sided printing, insulating glue printing, drying and testing which are sequentially carried out.
6. The method of manufacturing a suitable heterojunction MWT weldable double-sided battery according to claim 5, characterized in that: the preparation method comprises the following specific steps:
1) perforating the substrate using a laser;
2) texturing and cleaning: removing the damage layer and generating a suede;
3) coating amorphous silicon;
4) etching the insulating ring to insulate the hole;
5) laser insulation: grooving the periphery of the back hole by using laser;
6) plating a front TCO film and a back TCO film to form a conductive layer;
7) printing a cathode point by using a overprinting scheme, and printing a layer of thin hole plugging slurry to plug the punched holes and prevent light transmission;
8) printing a back electrode by using low-temperature silver paste, and printing the back electrode on the plugging hole and the long grid line of the back electrode;
9) printing insulating glue at the position of the hole plugging electrode leading-out pad to insulate the cathode from the anode;
10) drying at below 200 deg.C;
11) and connecting the positive electrode and the negative electrode, and separating the positive electrode and the negative electrode through insulating glue to obtain the MWT heterojunction assembly with the front surface and the back surface being in a reversed-square shape and the welding strip being designed.
7. The method of manufacturing a suitable heterojunction MWT weldable double-sided battery according to claim 6, characterized in that: the step 6) of plating the front and back TCO films specifically comprises
6.1) plating the intrinsic amorphous silicon on the front surface and the P-doped amorphous silicon on the front surface in sequence to form a built-in electric field
And 6.2) plating the intrinsic amorphous silicon on the back surface and plating the N-doped amorphous silicon on the back surface in sequence to form a back electric field.
8. The method of manufacturing a suitable heterojunction MWT weldable double-sided battery according to claim 6, characterized in that: and 5) the groove opening depth is just to remove the amorphous silicon layer and the TCO film on the back, and the size of the groove is a circle with the diameter of 2-10 mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111450032.8A CN113851562A (en) | 2021-12-01 | 2021-12-01 | Preparation method of weldable double-sided battery suitable for heterojunction MWT |
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| CN202111450032.8A CN113851562A (en) | 2021-12-01 | 2021-12-01 | Preparation method of weldable double-sided battery suitable for heterojunction MWT |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012108767A2 (en) * | 2011-02-08 | 2012-08-16 | Tsc Solar B.V. | A method of manufacturing a solar cell and solar cell thus obtained |
| CN209199951U (en) * | 2018-12-24 | 2019-08-02 | 江苏日托光伏科技股份有限公司 | A kind of hetero-junctions MWT double-sided solar battery piece |
| CN113113501A (en) * | 2021-04-26 | 2021-07-13 | 江苏日托光伏科技股份有限公司 | MWT heterojunction solar cell and preparation method thereof |
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- 2021-12-01 CN CN202111450032.8A patent/CN113851562A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012108767A2 (en) * | 2011-02-08 | 2012-08-16 | Tsc Solar B.V. | A method of manufacturing a solar cell and solar cell thus obtained |
| CN209199951U (en) * | 2018-12-24 | 2019-08-02 | 江苏日托光伏科技股份有限公司 | A kind of hetero-junctions MWT double-sided solar battery piece |
| CN113113501A (en) * | 2021-04-26 | 2021-07-13 | 江苏日托光伏科技股份有限公司 | MWT heterojunction solar cell and preparation method thereof |
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Application publication date: 20211228 |