CN216015395U - Electric connector and photovoltaic assembly adopting same - Google Patents

Electric connector and photovoltaic assembly adopting same Download PDF

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Publication number
CN216015395U
CN216015395U CN202121822337.2U CN202121822337U CN216015395U CN 216015395 U CN216015395 U CN 216015395U CN 202121822337 U CN202121822337 U CN 202121822337U CN 216015395 U CN216015395 U CN 216015395U
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substrate
amorphous silicon
silicon layer
electrical connector
heterojunction
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陈海燕
蒋方丹
吴坚
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Jiaxing Canadian Solar Technology Research Institute
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Jiaxing Canadian Solar Technology Research Institute
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Priority to PCT/CN2022/108629 priority patent/WO2023011314A1/en
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The application provides an electric connector and adopt photovoltaic module of this electric connector, electric connector includes the substrate, sets up the nanometer silver wire film and two piece at least solder strips that are parallel to each other of substrate one side surface. The photovoltaic module comprises a battery string, wherein the battery string comprises a plurality of heterojunction batteries which are sequentially connected in series along a first direction and an electric connecting piece connected to the surfaces of the heterojunction batteries. By adopting the electric connector provided by the application, after the nano silver wire film is contacted with the surface of the heterojunction battery, the current collection and transmission performance of the surface of the battery can be improved, the silver paste consumption and the material cost are reduced, and the shading loss of a metal electrode is reduced; the substrate of the electrical connector also reduces the risk of abnormal damage to the heterojunction cell during assembly processes.

Description

Electric connector and photovoltaic assembly adopting same
Technical Field
The application relates to the technical field of photovoltaic production, in particular to an electric connector and a photovoltaic assembly with the same.
Background
With the rapid development of the photovoltaic industry, the requirements of domestic and foreign markets on the efficiency and performance of solar cells are higher and higher, which also promotes a plurality of manufacturers to actively research novel cell structures and production processes. Among them, Heterojunction (HJT) cells have the advantages of low light attenuation and low temperature coefficient, and can reduce the thermal damage of the silicon substrate while reducing the energy consumption, and have become a hot spot in the industry in recent years.
In the preparation process of the photovoltaic module, different heterojunction cells are firstly connected in series into a cell string by adopting welding strips with set specifications and then laminated and packaged to obtain the photovoltaic module. The industry also discloses a heterojunction battery structure without a main grid, and uses a technical scheme that a welding strip interconnection film is in contact interconnection with the front side and the back side of a battery piece; although the use of silver thick liquid has been saved to above-mentioned scheme, also need not to carry out screen printing and solidification, from practical application, its contact resistance is higher, and surface current collects also relatively poorly, and the conversion efficiency of battery and subassembly is difficult to guarantee.
In view of the above, there is a need for a new electrical connector and a photovoltaic module using the same.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide an electric connector and a photovoltaic module adopting the same, which can improve the current collection and transmission performance of the surface of a battery in a module product, reduce silver paste consumption and material cost, and reduce shading loss and abnormal damage risks.
In order to realize the above object of the present invention, the present application provides an electrical connector for electrical connection of a solar cell, the electrical connector includes a substrate, a nano silver wire film on a side surface of the substrate and at least two solder strips parallel to each other.
As a further improvement of the embodiment of the application, the thickness of the nano silver wire film is set to be 50-500 nm; the sheet resistance of the nano silver wire film is set to be 40-100 omega/sq.
As a further improvement of the embodiment of the application, the length of the nano silver wire in the nano silver wire film is set to be 10-20 μm, and the diameter of the nano silver wire is set to be 20-60 nm.
As a further improvement of the embodiment of the application, the thickness of the substrate is set to be 20-200 μm.
The application also provides a photovoltaic module, including the battery cluster and establish front encapsulation glued membrane and back encapsulation glued membrane in battery cluster both sides separately, the battery cluster includes along a plurality of heterojunction batteries, the connection of first direction series connection in proper order at heterojunction battery surface and as before electric connector.
As a further improvement of the embodiments of the present application, the photovoltaic module further includes a bus bar disposed at an end of the cell string; the electrical connectors include a first electrical connector and a second electrical connector, the first electrical connector including a substrate, one end of the solder ribbon extending beyond the substrate and forming a free end, the first electrical connector for connecting a heterojunction cell at an end of the string to the bus bar; the second electric connector comprises two substrates, the solder strip comprises a first part arranged on the front surface of one substrate, a second part arranged on the back surface of the other substrate and a third part connecting the first part and the second part, and the second electric connector is used for connecting two adjacent heterojunction cells.
As a further improvement of the embodiment of the application, a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer, a first transparent conducting layer and a front electrode are sequentially stacked on the front surface of the heterojunction cell, and a second intrinsic amorphous silicon layer, a second doped amorphous silicon layer, a second transparent conducting layer and a back electrode are sequentially stacked on the back surface of the heterojunction cell; the front electrode comprises at least two front main grids extending along a first direction, the back electrode comprises at least two back main grids extending along the first direction, the positions of the front main grids and the positions of the back main grids correspond to each other, and the number of the front main grids and the number of the back main grids are consistent with the number of the welding strips.
As a further improvement of the embodiment of the application, the thicknesses of the first transparent conducting layer and the second transparent conducting layer are set to be 50-100 nm, and the sheet resistances of the first transparent conducting layer and the second transparent conducting layer are set to be 30-120 omega/sq.
As a further improvement of the embodiment of the application, the thicknesses of the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are set to be 1-10 nm; the thicknesses of the first doped amorphous silicon layer and the second doped amorphous silicon layer are set to be 3-10 nm.
The beneficial effect of this application is: by adopting the electric connecting piece and the photovoltaic assembly adopting the electric connecting piece, after the nano silver wire film of the electric connecting piece is contacted with the surface of the heterojunction battery, the current collection and transmission performance of the surface of the battery can be improved, the silver paste consumption and the material cost are reduced, and the shading loss of a metal electrode is reduced; the substrate of the electric connecting piece can also be used as a protective layer, so that the risk of abnormal damage of the heterojunction battery in the assembly process is reduced.
Drawings
FIG. 1 is a schematic cross-sectional view of an electrical connector of the present application;
FIG. 2 is a schematic view of a first electrical connector of the photovoltaic module of the present application;
FIG. 3 is a schematic view of a second electrical connector of the photovoltaic module of the present application;
FIG. 4 is a schematic structural view of a photovoltaic module of the present application;
FIG. 5 is a schematic structural view of a heterojunction cell in a photovoltaic module of the present application;
fig. 6 is a schematic flow chart of main steps of a method for manufacturing a photovoltaic module according to the present application.
100-electrical connection; 101-a first electrical connection; 102-a second electrical connection; 11-a substrate; 12-a silver nanowire film; 13-welding a strip; 131-a first portion; 132-a second portion; 133-a third portion; 200-a photovoltaic module; 201-battery string, 202-front packaging adhesive film; 203-back side packaging adhesive film; 21-a heterojunction cell; 210-a silicon substrate; 211-a first intrinsic amorphous silicon layer; 212-a second intrinsic amorphous silicon layer; 213-first doped amorphous silicon layer; 214-a second doped amorphous silicon layer; 215-a first transparent conductive layer; 216-a second transparent conductive layer; 217-front electrode; 218-back electrode.
Detailed Description
The present invention will be described in detail below with reference to embodiments shown in the drawings. The present invention is not limited to the embodiment, and structural, methodological, or functional changes made by one of ordinary skill in the art according to the embodiment are included in the scope of the present invention.
Referring to fig. 1, the present application provides an electrical connector 100 for electrical connection of a solar cell, the electrical connector including a substrate 11, a silver nanowire film 12 disposed on a surface of one side of the substrate 11, and at least two solder strips 13 parallel to each other, wherein one end of each solder strip 13 extends beyond the surface of the substrate 11 in a first direction to form a free end or is connected to another substrate 11.
The substrate 11 may be made of a flexible resin film, and is generally configured to be rectangular or rectangular-like, and preferably, the overall size of the substrate does not exceed the size of a given solar cell; the substrate 11 can also be arranged into a two-layer or multi-layer composite film structure, and the thickness is set to be 20-200 mu m. The thickness of the nano silver wire film 12 is set to be 50-500 nm, and the sheet resistance of the nano silver wire film 12 is set to be 40-100 omega/sq. The length of the nano silver wire in the nano silver wire film 12 is set to be 10-20 mu m, and the diameter of the nano silver wire is set to be 20-60 nm. The solder strip 13 can be a flat solder strip, a circular solder strip or a metal solder strip with other cross-sectional shapes, and the solder strip 13 can be seen as embedded on the surface of the substrate 11 for soldering the metal electrode on the surface of the solar cell.
The electrical connectors 100 include a first electrical connector 101 (shown in fig. 2) and a second electrical connector 102 (shown in fig. 3). The first electrical connector 101 includes a substrate 11, a silver nanowire thin film 12 disposed on one side surface of the substrate 11, and at least two solder strips 13 parallel to each other and extending beyond the substrate 11, wherein free ends of the solder strips 13 can be connected to a bus bar to realize electrical output of corresponding solar cells. The second electrical connector 102 comprises two substrates 11 and at least two mutually parallel solder strips 13, the solder strips 13 comprise a first part 131 arranged on the front surface of one of the substrates 11, a second part 132 arranged on the back surface of the other substrate 11, and a third part 133 connecting the first part 131 and the second part 132, and corresponding silver nanowire films 12 are arranged on the surfaces of one sides of the two substrates 11 facing the solder strips 13; the second electrical connection members 102 are used for realizing the series connection of two adjacent solar cells. For the second electrical connector 102, two ends of the solder strip 13 are respectively connected to two substrates 11; the fact that one end of the solder ribbon 13 extends beyond the substrate 11 means that the solder ribbon 13 extends beyond either of the substrates 11.
With reference to fig. 4 and 5, the present application further provides a photovoltaic module 200 using the electrical connector 100, including a cell string 201, and a front side encapsulant film 202 and a back side encapsulant film 203 respectively disposed on two sides of the cell string 201, where the cell string 201 includes a plurality of heterojunction cells 21 sequentially connected in series along a first direction. The electric connectors 100 are connected to the surfaces of the corresponding heterojunction cells 21; the ends of the battery string 201 are also provided with bus bars (not shown).
Here, the first electrical connection 101 is used to connect the heterojunction cells 21 at the ends of the cell string 201 to the bus bars; the second electrical connector 102 is used for connecting two adjacent heterojunction cells 21.
The heterojunction cell 21 comprises a silicon substrate 210, wherein a first intrinsic amorphous silicon layer 211, a first doped amorphous silicon layer 213, a first transparent conductive layer 215 and a front electrode 217 are sequentially stacked on the front surface of the silicon substrate 210; a second intrinsic amorphous silicon layer 212, a second doped amorphous silicon layer 214, a second transparent conductive layer 216 and a back electrode 218 are sequentially stacked on the back surface of the silicon substrate 210.
The silicon substrate 210 is an N-type or P-type crystal silicon wafer, the thickness of the silicon substrate 210 is set to be 50-300 mu m, and the resistivity of the silicon substrate is set to be 0.5-3.5 omega cm, preferably 2-3 omega cm. The doping type of the first doped amorphous silicon layer 213 is opposite to that of the second doped amorphous silicon layer 214, where the first doped amorphous silicon layer 213 is disposed on the front surface of the silicon substrate 210, i.e., a light receiving surface, and the second doped amorphous silicon layer 214 is disposed on the back surface of the silicon substrate 210, i.e., a backlight surface. Illustratively, the silicon substrate 210 is an N-type monocrystalline silicon wafer, and the first doped amorphous silicon layer 213 is a P-type doped layer, which may be typically configured as a boron doped layer; the second doped amorphous silicon layer 214 is an N-type doped layer, which can be typically configured as a phosphorus doped layer. It should be noted that the "front side" and the "back side" of the substrate 11 are described with respect to the connection arrangement of the heterojunction cell 21, the front side of the substrate 11 is connected to the back side of the heterojunction cell 21, and the back side of the substrate 11 is connected to the front side of the heterojunction cell.
The front electrode 217 includes at least two front main grids extending along the first direction, the back electrode 218 includes at least two back main grids extending along the first direction, the positions of the front main grids and the back main grids correspond to each other, and the number of the front main grids and the number of the back main grids are consistent with the number of the solder strips 13. The front electrode 217 and the back electrode 218 can be obtained by printing and curing corresponding low-temperature silver paste through a screen; furthermore, the front main grid and the back main grid may be continuously extended along the first direction, or intermittently arranged along the first direction, and are connected to the solder strips 13 on the corresponding electrical connectors 100 through a plurality of pads (pads) arranged at intervals.
For a specific heterojunction cell 21 in the cell string 201, the nano-silver wire thin film 12 of the electrical connector 100 as a conductive material layer can be used together with the first transparent conductive layer 215 and the second transparent conductive layer 216 to collect and transmit cell surface current. The nano silver wire film 12 can effectively reduce transmission resistance and enhance surface current collection capability, and the nano silver wire film 12 also has excellent light transmission without affecting absorption and utilization of light. It is easy to understand that the current collection and lateral transmission performance on the surface of the heterojunction cell 21 are improved, and the secondary grid lines on the surface of the cell can be reduced or even eliminated without affecting the current transmission performance, so as to reduce the shading loss.
In this embodiment, the thicknesses of the first intrinsic amorphous silicon layer 211 and the second intrinsic amorphous silicon layer 212 are set to be 1 to 10 nm; the thicknesses of the first doped amorphous silicon layer 213 and the second doped amorphous silicon layer 214 are set to be 3-10 nm. The first intrinsic amorphous silicon layer 211 and the second intrinsic amorphous silicon layer 212 may form a corresponding multi-layer composite structure through process adjustment; in addition, the overall thickness of the first intrinsic amorphous silicon layer 211 and the first doped amorphous silicon layer 213 is preferably set to be smaller than the overall thickness of the second intrinsic amorphous silicon layer 212 and the second doped amorphous silicon layer 214, so as to reduce the light absorption loss of the light receiving surface and improve the short-circuit current and the conversion efficiency.
The thicknesses of the first transparent conductive layer 215 and the second transparent conductive layer 216 are set to be 50-100 nm, and the sheet resistances of the first transparent conductive layer 215 and the second transparent conductive layer 216 are set to be 30-120 omega/sq. Specifically, the first transparent conductive layer 215 and the second transparent conductive layer 216 are transparent oxide conductive films, which form good electrical contact with the first doped amorphous silicon layer 213 and the second doped amorphous silicon layer 214. The thicknesses and specific configurations of the first transparent conductive layer 215 and the second transparent conductive layer 216 can be adjusted according to the product design requirements.
Referring again to fig. 6, the method for manufacturing the photovoltaic module 200 includes:
coating a given nano silver wire dispersion liquid on the surface of a substrate 11, placing at least two solder strips 13 at given positions on the surface of the substrate 11, and drying to obtain an electric connector 100, wherein the electric connector comprises a first electric connector 101 and a second electric connector 102;
preparing a battery string 201;
the battery string 201 is placed between a front-side packaging adhesive film 202 and a back-side packaging adhesive film 203 for lamination.
In the process of manufacturing the electrical connector 100, the nano-silver wire dispersion is mainly obtained by dispersing nano-silver wires with a predetermined specification in a carrier composed of solvents such as isopropyl alcohol, and the bonding strength of the solder strip 13 on the surface of the substrate 11 can also be improved by adjusting and improving the formula of the carrier.
The preparation process of the battery string 201 is specifically as follows:
placing the first electric connector 101 on a bearing platform, so that the side surface of the substrate 11 provided with the nano silver wire film 12 faces upwards, and placing a piece of heterojunction cell 21 on the substrate 11 of the first electric connector 101 in an alignment way;
placing one substrate 11 of a second electrical connector 102 on the aforementioned heterojunction cell 21, and then placing another heterojunction cell 21 in register on another substrate 11 of said second electrical connector 102, repeating the steps;
after the placement of the last heterojunction cell 21 is completed, another first electrical connector 101 is selected and placed on the last heterojunction cell 21 in an aligned manner.
The preparation process of the battery string 201 further includes heating to combine the first and second electrical connectors 101 and 102 with the corresponding heterojunction cells 21, so as to electrically connect the solder strips 13 with the front and back main grids.
The preparation process of the heterojunction cell 21 then comprises:
texturing, namely etching the surface of the silicon substrate 210 to form a pyramid-shaped textured surface;
preparing a first intrinsic amorphous silicon layer 211, a first doped amorphous silicon layer 213 and a first transparent conductive layer 215 on the front surface of a silicon substrate 210 in sequence, and preparing a second intrinsic amorphous silicon layer 212, a second doped amorphous silicon layer 214 and a second transparent conductive layer 216 on the back surface of the silicon substrate 210 in sequence;
a front electrode 217 is formed on the surface of the first transparent conductive layer 215, and a rear electrode 218 is formed on the surface of the second transparent conductive layer 216.
The texturing step specifically comprises the steps of carrying out double-sided alkaline texturing on the silicon substrate 210 by using KOH or NaOH or TMAH aqueous solution, and controlling the height of the textured surface on the surface of the silicon substrate 210 to be 0.5-5 microns, preferably 1-3 microns. The texturing process can adjust the surface morphology of the silicon substrate 210 through adjusting the solution concentration, the temperature and the reaction time, and can also add a given texturing additive to improve the texture quality according to the product requirements.
The first intrinsic amorphous silicon layer 211, the first doped amorphous silicon layer 213, the second intrinsic amorphous silicon layer 212 and the second doped amorphous silicon layer 214 are deposited by a PECVD method. In actual production, the first intrinsic amorphous silicon layer 211, the first doped amorphous silicon layer 213, the second intrinsic amorphous silicon layer 212, and the second doped amorphous silicon layer 214 are deposited in different reaction chambers respectively. The reaction gas of the first and second intrinsic amorphous silicon layers 211 and 212 is generally H2Dilute SiH4The film growth is completed under the action of a given radio frequency power supply, and the ratio H of the reaction gas2/SiH4The first intrinsic amorphous silicon layer 211 and the second intrinsic amorphous silicon layer 212 having different characteristics may be obtained accordingly.
The reaction gas of the first doped amorphous silicon layer 213 includes B2H6、SiH4、H2(ii) a The reaction gas of the second doped amorphous silicon layer 214 comprises PH3、SiH4、H2. Generally, the temperature of the reaction chamber can be set at about 180 ℃, the pressure is controlled at 30-200 pa, and film structures with different characteristics can be prepared by adjusting the composition, temperature, pressure and the like of the reaction gas.
The first transparent conductive layer 215 and the second transparent conductive layer 216 are deposited by a PVD method, and mainly include indium oxide or zinc oxide, and may further include one or more of tin oxide, aluminum oxide, calcium oxide, tungsten oxide, titanium oxide, and zirconium oxide.
The front electrode 217 and the back electrode 218 may be made of the same or different paste, and the preparation method includes printing a front silver paste on the first transparent conductive layer 215 by a screen printing method, and drying; then, the silicon substrate 210 is turned over, silver paste on the back surface is printed on the second transparent conductive layer 216 by a screen printing method, and drying is carried out; and then, the silicon substrate 210 is sent into a curing furnace for low-temperature curing to obtain a front electrode 217 and a back electrode 218. Wherein the curing temperature is usually set to 150-200 ℃, and the curing time is usually set to 15-30 min. It is to be understood that the printing and drying processes on both sides of the silicon substrate 210 may be exchanged.
The preparation method of the photovoltaic module 200 further includes the steps of detecting, framing, installing the junction box, testing the power and the like after the lamination is completed, and the steps are not repeated here.
In summary, after the nano silver wire film 12 of the electric connector 100 of the present application is contacted with the first transparent conductive layer 217 and the second transparent conductive layer 218 on the surface of the heterojunction cell 21, the current collection and transmission performance on the surface of the cell can be improved, the silver paste consumption and the material cost can be reduced, the shading loss of the metal electrode can be reduced, and the current density and the conversion efficiency can be improved; the substrate 11 of the electrical connector 100 also acts as a protective layer, reducing the risk of the heterojunction cells 21 being abnormally damaged during the fabrication of the cell string 201 and other component processes.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.

Claims (9)

1. An electrical connector for electrically connecting solar cells, comprising: the electric connector comprises a substrate, a nano silver wire film arranged on the surface of one side of the substrate and at least two parallel welding strips.
2. The electrical connector of claim 1, wherein: the thickness of the nano silver wire film is set to be 50-500 nm; the sheet resistance of the nano silver wire film is set to be 40-100 omega/sq.
3. The electrical connector of claim 1, wherein: the length of the nano silver wire in the nano silver wire film is set to be 10-20 mu m, and the diameter of the nano silver wire is set to be 20-60 nm.
4. The electrical connector of claim 1, wherein: the thickness of the substrate is set to be 20-200 μm.
5. The utility model provides a photovoltaic module, includes the battery cluster and establishes front encapsulation glued membrane and back encapsulation glued membrane in battery cluster both sides separately, the battery cluster includes a plurality of heterojunction batteries of establishing ties in proper order along the first direction, its characterized in that: the cell string further comprises an electrical connector according to any one of claims 1 to 4 attached to a surface of a heterojunction cell.
6. The photovoltaic module of claim 5, wherein: the photovoltaic module further comprises a bus bar disposed at an end of the string of cells; the electrical connectors include a first electrical connector and a second electrical connector, the first electrical connector including a substrate, one end of the solder ribbon extending beyond the substrate and forming a free end, the first electrical connector for connecting a heterojunction cell at an end of the string to the bus bar; the second electric connector comprises two substrates, the solder strip comprises a first part arranged on the front surface of one substrate, a second part arranged on the back surface of the other substrate and a third part connecting the first part and the second part, and the second electric connector is used for connecting two adjacent heterojunction cells.
7. The photovoltaic module of claim 5, wherein: the front side of the heterojunction cell is sequentially provided with a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer, a first transparent conducting layer and a front electrode in a stacked manner, and the back side of the heterojunction cell is sequentially provided with a second intrinsic amorphous silicon layer, a second doped amorphous silicon layer, a second transparent conducting layer and a back electrode in a stacked manner; the front electrode comprises at least two front main grids extending along a first direction, the back electrode comprises at least two back main grids extending along the first direction, the positions of the front main grids and the positions of the back main grids correspond to each other, and the number of the front main grids and the number of the back main grids are consistent with the number of the welding strips.
8. The photovoltaic module of claim 7, wherein: the thickness of the first transparent conducting layer and the second transparent conducting layer is set to be 50-100 nm, and the sheet resistance of the first transparent conducting layer and the sheet resistance of the second transparent conducting layer are set to be 30-120 omega/sq.
9. The photovoltaic module of claim 7, wherein: the thicknesses of the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are set to be 1-10 nm; the thicknesses of the first doped amorphous silicon layer and the second doped amorphous silicon layer are set to be 3-10 nm.
CN202121822337.2U 2021-08-05 2021-08-05 Electric connector and photovoltaic assembly adopting same Active CN216015395U (en)

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CN202121822337.2U CN216015395U (en) 2021-08-05 2021-08-05 Electric connector and photovoltaic assembly adopting same
PCT/CN2022/108629 WO2023011314A1 (en) 2021-08-05 2022-07-28 Electrical connector, and photovoltaic assembly and method for manufacturing same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023011314A1 (en) * 2021-08-05 2023-02-09 嘉兴阿特斯技术研究院有限公司 Electrical connector, and photovoltaic assembly and method for manufacturing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023011314A1 (en) * 2021-08-05 2023-02-09 嘉兴阿特斯技术研究院有限公司 Electrical connector, and photovoltaic assembly and method for manufacturing same

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