CN113851389A - Heat treatment unit, substrate treatment apparatus, heat treatment method, and storage medium - Google Patents

Heat treatment unit, substrate treatment apparatus, heat treatment method, and storage medium Download PDF

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Publication number
CN113851389A
CN113851389A CN202110677895.2A CN202110677895A CN113851389A CN 113851389 A CN113851389 A CN 113851389A CN 202110677895 A CN202110677895 A CN 202110677895A CN 113851389 A CN113851389 A CN 113851389A
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Prior art keywords
exhaust
gas
unit
heating
heat treatment
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Chinese (zh)
Inventor
久田耕祐
大谷响
栗岛启聪
藤瀬辽平
大塚幸信
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention provides a heat treatment unit, a substrate treatment apparatus, a heat treatment method and a storage medium, which can realize high-efficiency recovery of sublimate and heat treatment in a low-oxygen state at the same time. The heat treatment unit includes: a heating unit that supports the substrate on which the coating film is formed and heats the substrate; a chamber having a peripheral wall portion surrounding a periphery of the heating portion and a lid portion covering the heating portion with a gap formed therebetween to form a processing space above the heating portion; a housing that houses the heating section and the chamber; a1 st gas supply unit configured to supply a1 st gas having an oxygen concentration lower than that of the atmosphere to the processing space; an exhaust unit configured to exhaust the processing space by an amount of exhaust gas larger than a supply amount of the 1 st gas; a 2 nd gas supply unit configured to supply a 2 nd gas having an oxygen concentration lower than that of the atmosphere to a gap between the peripheral wall portion and the lid portion; and a3 rd gas supply unit for supplying a3 rd gas having an oxygen concentration lower than that of the atmosphere to the outside of the chamber in the housing.

Description

Heat treatment unit, substrate treatment apparatus, heat treatment method, and storage medium
Technical Field
The invention relates to a heat treatment unit, a substrate processing apparatus, a heat treatment method and a storage medium.
Background
Patent document 1 discloses a substrate heating apparatus including: a heating plate for placing and heating a substrate; and a gas supply unit for supplying a low-oxygen-atmosphere forming gas for making the processing space a low-oxygen atmosphere from one end portion to the other end portion of the processing space when the substrate is heated.
Documents of the prior art
Patent document
Patent document 1: international publication No. 2020/022069
Disclosure of Invention
Technical problem to be solved by the invention
The invention provides a heat treatment unit, a substrate treatment apparatus, a heat treatment method and a storage medium, which can realize high-efficiency recovery of sublimate and heat treatment in a low-oxygen state at the same time.
Means for solving the problems
A heat treatment unit of an aspect of the present invention includes: a heating unit for supporting the substrate on which the coating film is formed and heating the substrate; a chamber having a peripheral wall portion surrounding a periphery of the heating portion and a lid portion covering the heating portion with a gap formed therebetween to form a processing space above the heating portion; a housing for housing the heating section and the chamber; a1 st gas supply unit for supplying a1 st gas having an oxygen concentration lower than that of the atmosphere into the processing space; an exhaust unit for exhausting the processing space by an amount of exhaust gas larger than the supply amount of the 1 st gas; a 2 nd gas supply unit for supplying a 2 nd gas having an oxygen concentration lower than that of the atmosphere to a gap between the peripheral wall portion and the lid portion; and a3 rd gas supply unit for supplying a3 rd gas having an oxygen concentration lower than that of the atmosphere to the outside of the processing space in the casing.
Effects of the invention
The present invention can provide a heat treatment unit, a substrate treatment apparatus, a heat treatment method, and a storage medium that can simultaneously achieve both high-efficiency recovery of a sublimate and heat treatment in a low-oxygen state.
Drawings
Fig. 1 is a schematic view showing an example of a substrate processing system.
Fig. 2 is a schematic view showing an example of the coating and developing apparatus.
Fig. 3 is a side view schematically showing an example of the heat treatment unit.
Fig. 4 is a side view schematically showing an example of the heat treatment unit.
Fig. 5 is a plan view schematically showing an example of a cover portion of the chamber.
Fig. 6 is an enlarged schematic view of a part of an example of the heat treatment unit.
Fig. 7 is a plan view schematically showing an example of a part of the heat treatment unit and the gas supply unit.
Fig. 8 is a side view schematically showing an example of the pin exhaust unit.
Fig. 9 is a block diagram showing an example of the hardware configuration of the control device.
FIG. 10 is a flowchart showing an example of the heat treatment method.
Fig. 11 is a flowchart showing an example of the heating process.
Fig. 12 (a) and (b) are schematic views for explaining an example of the heat treatment method.
Fig. 13 (a) and (b) are schematic diagrams for explaining an example of the heat treatment.
Fig. 14 (a) and (b) are schematic diagrams for explaining an example of the heat treatment.
Fig. 15 (a) is a schematic diagram for explaining an example of the heat treatment. Fig. 15 (b) is a schematic diagram for explaining an example of the cooling process.
Description of the reference numerals
2 … coating-developing apparatus, U2 … heat treatment unit, W … work, 52 … heating part, 52a … through hole, 60 … work lifting part, 62 … support pin, 64 … lifting driving part, 70 … chamber, 72 … peripheral wall part, 74 … lid part, S … processing space, g1, g2 … gap, 80 … 1 st gas supply, 82 … head, 82a … exhaust hole, 90 … nd 2 nd gas supply, 100 … rd 3 gas supply, 110 … st 1 st exhaust, 120 … outer periphery exhaust, 130 … center exhaust, 140 … periphery exhaust, 150 … nd 2 nd exhaust, 152 … independent exhaust path, 152a … st 1 region, 152b … nd 2 region, 154 … common exhaust path, 162 … st 1 exhaust path forming part, 164 … bellows, 166 … nd 2 exhaust path forming part, 168 … bottom, 168a … connecting hole, 170 … sealing member, 200 … control device.
Detailed Description
Various exemplary embodiments will be described below.
An exemplary embodiment of a heat treatment unit includes: a heating unit for supporting the substrate on which the coating film is formed and heating the substrate; a chamber having a peripheral wall portion surrounding a periphery of the heating portion and a lid portion covering the heating portion with a gap formed therebetween to form a processing space above the heating portion; a housing for housing the heating section and the chamber; a1 st gas supply unit for supplying a1 st gas having an oxygen concentration lower than that of the atmosphere into the processing space; an exhaust unit for exhausting the processing space by an amount of exhaust gas larger than the supply amount of the 1 st gas; a 2 nd gas supply unit for supplying a 2 nd gas having an oxygen concentration lower than that of the atmosphere to a gap between the peripheral wall portion and the lid portion; and a3 rd gas supply unit for supplying a3 rd gas having an oxygen concentration lower than that of the atmosphere to the outside of the chamber in the housing.
In this heat treatment unit, the exhaust amount of the exhaust unit is larger than the supply amount of the 1 st gas, and therefore, the process space can be exhausted to a negative pressure. This enables efficient recovery of sublimates generated from the coating film by heating the substrate. On the other hand, since a gap is formed between the peripheral wall portion and the lid portion, it is possible to introduce a gas into the processing space from the outside of the processing space so as to eliminate the negative pressure state of the processing space. Specifically, the 2 nd gas supplied from the 2 nd gas supply portion to the gap between the peripheral wall portion and the lid portion can be introduced into the processing space. In addition, even when a gas having a larger supply amount than the 2 nd gas is introduced into the processing space, the 2 nd gas from the 2 nd gas supply unit and the gas outside the chamber formed in a low oxygen state by the 3 rd gas supply unit are introduced into the processing space. Therefore, the processing space can be maintained in a low oxygen state. Therefore, both high-efficiency recovery of the sublimate and heat treatment in a low-oxygen state can be achieved at the same time.
The exhaust unit may include: a peripheral exhaust section for exhausting the processing space from a peripheral region outside a peripheral edge of the substrate supported by the heating section; and a central exhaust section for exhausting gas from a central region inside a peripheral edge of the substrate supported by the heating section. In the former stage of the process in which the coating film on the substrate is cured by heating, the influence of the exhaust gas from the processing space on the film thickness is large, and in the latter stage of the curing process of the coating film, the influence of the exhaust gas from the processing space on the film thickness is small. In the above configuration, the exhaust gas can be exhausted from the outer peripheral region before the curing process, and the influence on the film thickness due to the exhaust gas from the processing space can be suppressed. Further, in the latter stage of the curing process in which the degree of influence of the exhaust gas in the processing space on the film thickness is small, the exhaust gas can be performed from the central region, and the sublimate can be efficiently recovered. Therefore, the sublimate can be efficiently collected, and the in-plane uniformity of the film thickness can be improved.
The 1 st gas supply unit may have a head portion in which a plurality of discharge holes are formed, the discharge holes being distributed on a surface of the head portion facing the substrate supported by the heating unit, and the 1 st gas may be supplied to the substrate on the heating unit through the plurality of discharge holes. In this case, the influence on the film thickness by the 1 st gas from the 1 st gas supply unit can be made uniform. Therefore, the in-plane uniformity of the film thickness can be improved.
The peripheral wall portion may be disposed so as to form a gap between the peripheral wall portion and the heating portion. The exhaust section may include a peripheral exhaust section for exhausting the processing space from a gap between the peripheral wall section and the heating section. In this case, an increase in the oxygen concentration in the processing space due to the gas existing in the gap between the heating portion and the peripheral wall portion can be suppressed, and the heat treatment can be performed more reliably in a low-oxygen state.
At least a part of the exhaust path included in the peripheral edge exhaust portion and at least a part of the gas supply path included in the 2 nd gas supply portion may be disposed in close proximity to each other. In this case, the temperature of the 2 nd gas supplied through the gas supply path of the 2 nd gas supply unit increases, and it is possible to suppress a decrease in the temperature of the processing space due to the 2 nd gas from the 2 nd gas supply unit being sucked into the processing space.
The heat treatment unit may further include: a substrate lifting unit having a plurality of support pins inserted into the plurality of through holes penetrating the heating unit in the vertical direction, and a lifting drive unit for lifting the plurality of support pins; and a pin exhaust unit for exhausting the processing space from the plurality of through holes. In this case, in a state where the substrate is separated from the heating unit, an increase in the oxygen concentration in the processing space due to the gas from the through hole into which the support pin is inserted can be suppressed, and the heat treatment can be performed in a low-oxygen state more reliably.
The pin exhaust unit may include: a plurality of independent exhaust paths connected to the plurality of through holes, respectively, below the heating portion; and a common exhaust path connected to the plurality of independent exhaust paths. In this case, the pin exhaust unit can be made more space-saving than a case where an exhaust space connected to the plurality of through holes is provided below the heating unit and exhaust is performed from the plurality of through holes.
One of the plurality of independent exhaust paths may include: a1 st region extending downward from a corresponding one of the through holes; and a 2 nd region extending in a direction intersecting with the extending direction of the 1 st region. The pin exhaust unit may include: a1 st exhaust path forming part for forming a1 st region; and a 2 nd exhaust path forming part for forming the 2 nd region. One of the plurality of support pins may be disposed in the 1 st region along the extending direction of the 1 st region in one independent exhaust path, and inserted into a connection hole provided in the bottom of the 2 nd exhaust path forming portion. The 1 st exhaust path forming portion may include a bellows that is expandable and contractible in the extending direction of the 1 st region. The pin exhaust unit may include a seal member disposed to close the connection hole and movable relative to the connection hole. In this case, by absorbing the contraction or expansion of the exhaust passage forming portion due to the temperature rise of the heating portion with the bellows and closing the connection hole connected to the lower end portion of the independent exhaust passage with the seal member, it is possible to suppress the gas that is not low in oxygen from flowing into the processing space through the independent exhaust passage.
The coating film may be a coating film formed by applying the treatment liquid to the surface of the substrate. In this case, the sublimate generated by the temperature increase of the coating film can be efficiently recovered, and the characteristics of the coating film can be improved by the heat treatment under low oxygen.
An exemplary embodiment of a substrate processing apparatus includes: the heat treatment unit; and a control unit for controlling the heat treatment unit. The control means can control the heat processing means such that the heat processing means switches from a1 st state in which the processing space is exhausted by an amount of exhaust gas smaller than a sum of a supply amount of a1 st gas and a supply amount of a 2 nd gas to a 2 nd state in which the processing space is exhausted by an amount of exhaust gas larger than a sum of a supply amount of the 1 st gas and a supply amount of the 2 nd gas.
It takes time for the region outside the processing space and the gap in the casing to reach a state where the oxygen concentration is low to the same extent as in the processing space. However, if the heating of the substrate is started after waiting until the region outside the processing space and the gap reaches a sufficiently low oxygen concentration, the efficiency of the substrate processing is lowered. In the above configuration, in the 1 st state, the process space can be exhausted at an exhaust gas rate such that a gas other than the 2 nd gas from the 2 nd gas supply unit does not enter the process space. In the 2 nd state after switching from the 1 st state, the gas having reached a sufficiently low oxygen state can be introduced into the processing space from the gap and the region other than the processing space. Therefore, the efficiency of substrate processing including processing for heating the substrate under low oxygen can be improved.
The exhaust unit may include: a peripheral exhaust section for exhausting the processing space from a peripheral region outside a peripheral edge of the substrate supported by the heating section; and a central exhaust section for exhausting gas from a central region inside a peripheral edge of the substrate supported by the heating section. The control unit may control the exhaust unit so that the processing space is exhausted by at least the outer peripheral exhaust unit in the 1 st state and the processing space is exhausted by at least the central exhaust unit in the 2 nd state. In this case, the process space is exhausted from the outer peripheral region in the state 1 before the curing process of the coating film on the substrate, whereby the influence of the exhaust gas on the film thickness can be suppressed. On the other hand, in the second stage of the curing process in which the degree of influence of the exhaust gas on the film thickness is small, the exhaust gas can be performed from the central region in the 2 nd state, and the sublimate can be efficiently recovered. Therefore, the sublimate can be efficiently collected, and the in-plane uniformity of the film thickness can be improved.
An exemplary embodiment of a heat treatment method includes: a heating step of heating the substrate on which the coating film is formed by using a heating unit in a processing space formed on the heating unit by a chamber having a peripheral wall portion and a lid portion, the peripheral wall portion surrounding the heating unit, the lid portion being disposed so as to form a gap between the lid portion and the peripheral wall portion; a1 st gas supply step of supplying a1 st gas having an oxygen concentration lower than that of the atmosphere into the processing space; an exhaust step of exhausting the processing space by an exhaust amount larger than a supply amount of the 1 st gas; a 2 nd gas supply step of supplying a 2 nd gas having an oxygen concentration lower than that of the atmosphere into a gap between the peripheral wall portion and the lid portion; and a3 rd gas supply step of supplying a3 rd gas having an oxygen concentration lower than the atmospheric air to the outside of the chamber in the housing accommodating the heating portion and the chamber. In this heat treatment method, as in the heat treatment unit described above, both high-efficiency recovery of sublimates and heat treatment in a low-oxygen state can be achieved at the same time.
The storage medium of one exemplary embodiment is a computer-readable storage medium that stores a program for causing an apparatus to execute the above-described heat treatment method.
An embodiment will be described below with reference to the drawings. In the following description, the same elements or elements having the same function are denoted by the same reference numerals, and redundant description thereof is omitted.
A substrate processing system 1 shown in fig. 1 is a system for forming a photosensitive coating film on a workpiece W, exposing the photosensitive coating film, and developing the photosensitive coating film. The workpiece W to be processed is, for example, a substrate or a substrate in a state where a film, a circuit, or the like is formed by performing a predetermined process. The substrate included in the workpiece W is, as an example, a silicon-containing wafer. The workpiece W (substrate) may be formed in a circular shape. The workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like, or may be an intermediate obtained by subjecting such a substrate or the like to a predetermined process. The photosensitive coating film is, for example, a resist film.
The substrate processing system 1 includes a coating-developing apparatus 2 and an exposure apparatus 3. The coating and developing apparatus 2 is used to perform a process of coating a resist (chemical solution) on the surface of the workpiece W to form a resist film before the exposure process of the exposure apparatus 3, and to perform a developing process of the resist film after the exposure process. The exposure device 3 is a device for exposing a resist film (photosensitive coating film) formed on a workpiece W (substrate). Specifically, the exposure apparatus 3 irradiates the portion of the resist film to be exposed with an energy ray by a method such as liquid immersion exposure.
[ substrate processing apparatus ]
Next, the configuration of the coating and developing apparatus 2 will be described as an example of the substrate processing apparatus. As shown in fig. 1 and 2, the coating-developing device 2 includes a carrier block 4, a process block 5, an interface block 6, and a control device 200 (control unit).
The carrier block 4 is capable of introducing the work W into the coating and developing apparatus 2 and discharging the work W from the coating and developing apparatus 2. For example, the carrier block 4 can support a plurality of carriers (carriers) C for the workpiece W, and includes a transport device a1 including a transfer arm. The carrier C can accommodate a plurality of circular workpieces W, for example. The transport device a1 can take out the workpiece W from the carrier C and transfer it to the processing block 5, and can receive the workpiece W from the processing block 5 and return it to the carrier C. The processing block 5 has processing modules 11, 12, 13, 14.
The processing module 11 incorporates a liquid processing unit U1, a heat processing unit U2, and a transfer device A3 for transferring the workpiece W to these units. The process module 11 is capable of forming an underlying film on the surface of the workpiece W using the liquid process unit U1 and the heat treatment unit U2. Examples of the underlayer film include an soc (spin On carbon) film. The liquid treatment unit U1 is used to apply a treatment liquid for forming a lower layer film on the workpiece W. The heat treatment unit U2 is used to perform various heat treatments associated with the formation of the lower layer film. The heat treatment unit U2 can perform heat treatment on a coating film (coating film) formed by applying a treatment liquid for SOC film formation on the surface of the workpiece W, for example. By heating the coating of the processing liquid for forming the SOC film, the coating can be cured by a crosslinking reaction in the coating. Thereby, the SOC film is formed on the surface of the workpiece W.
The processing module 12 incorporates a liquid processing unit U1, a heat processing unit U2, and a transfer device A3 for transferring the workpiece W to these units. The process module 12 can form a resist film on the underlying film using the liquid process unit U1 and the heat process unit U2. The liquid processing unit U1 is for forming a coating film of a processing liquid for forming a resist film on the surface of the workpiece W by applying the processing liquid on the lower layer film. The heat treatment unit U2 is used to perform various heat treatments associated with the formation of the resist film.
The processing module 13 incorporates a liquid processing unit U1, a heat processing unit U2, and a conveyance device A3 for conveying the workpiece W to these units. The process module 13 can form an upper layer film on the resist film using the liquid process unit U1 and the heat process unit U2. The liquid treatment unit U1 is used to apply a treatment liquid for forming an upper layer film on the resist film. The heat treatment unit U2 is used to perform various heat treatments associated with the formation of the upper layer film.
The processing module 14 incorporates a liquid processing unit U1, a heat processing unit U2, and a conveyance device A3 for conveying the workpiece W to these units. The process module 14 can perform the developing process of the resist film subjected to the exposure process and the heat treatment associated with the developing process by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 is used to apply a developer to the surface of the exposed workpiece W, and then to clean the workpiece W with a rinse liquid, thereby performing a developing process of the resist film. The heat treatment unit U2 is used to perform various heat treatments accompanying the development treatment. Specific examples of the heat treatment include heat treatment before development (PEB), heat treatment after development (PB: Post Bake), and the like.
A shelf unit U8 is provided on the carrier block 4 side in the processing block 5. The shelf unit U8 is divided into a plurality of cells arranged in the up-down direction. A conveyor a7 including a lift arm is provided in the vicinity of the rack unit U8. The transfer device a7 is used to lift and lower the workpieces W between the cells of the rack unit U8.
A shelf unit U9 is provided on the interface block 6 side in the processing block 5. The shelf unit U9 is divided into a plurality of cells arranged in the up-down direction.
The interface block 6 is used for transferring the workpiece W between the interface block 6 and the exposure apparatus 3. For example, the interface block 6 is provided with a transport device A8 including a transfer arm therein, and is connected to the exposure apparatus 3. The transport device A8 can transfer the workpiece W placed on the rack unit U9 to the exposure apparatus 3. The conveying device A8 can receive the workpiece W from the exposure device 3 and return it to the rack unit U9.
The control device 200 controls the coating and developing device 2 to perform the coating and developing process according to the following flow, for example. First, the controller 200 controls the transfer device a1 to transfer the workpiece W in the carrier C to the rack unit U8, and controls the transfer device a7 to arrange the workpiece W in a cell for the process module 11.
Next, the controller 200 controls the transfer device a3 to transfer the workpieces W of the rack unit U8 to the liquid processing unit U1 and the heat processing unit U2 in the process module 11. Further, the controller 200 controls the liquid treatment unit U1 and the heat treatment unit U2 so that an underlayer film (for example, SOC film) is formed on the surface of the workpiece W. Thereafter, the controller 200 controls the transfer device A3 to return the work W on which the lower layer film is formed to the rack unit U8, and controls the transfer device a7 to place the work W in the chamber for the process module 12.
Next, the controller 200 controls the transfer device a3 to transfer the workpieces W of the rack unit U8 to the liquid processing unit U1 and the heat processing unit U2 in the process module 12. Further, the controller 200 controls the liquid treatment unit U1 and the heat treatment unit U2 so that a resist film is formed on the surface of the workpiece W. Thereafter, the controller 200 controls the transporter A3 to return the workpiece W to the rack unit U8, and controls the transporter a7 to arrange the workpiece W to the cell for the process module 13.
Next, the controller 200 controls the transfer device a3 to transfer the workpiece W in the rack unit U8 to each unit in the processing module 13. The controller 200 controls the liquid treatment unit U1 and the heat treatment unit U2 so that an upper layer film is formed on the resist film of the workpiece W. Thereafter, the controller 200 controls the conveyor a3 to convey the workpiece W to the rack unit U9.
Subsequently, the controller 200 controls the transport device A8 to send out the workpiece W on the rack unit U9 to the exposure device 3. Thereafter, the controller 200 controls the transport device A8 so that the workpiece W subjected to the exposure processing is received from the exposure device 3 and is placed in the cell for the processing module 14 of the rack unit U9.
Next, the controller 200 controls the transfer device a3 to transfer the workpiece W of the rack unit U9 to each unit in the process module 14, and controls the liquid processing unit U1 and the heat treatment unit U2 to perform a developing process on the resist film of the workpiece W. Thereafter, the controller 200 controls the transporter A3 to return the workpiece W to the rack unit U8, and controls the transporter a7 and the transporter a1 to return the workpiece W to the carrier C. Through the above steps, the coating-developing process for 1 workpiece W is completed. After the coating and developing treatment, the surface of the work W may be etched using a lower layer film such as an SOC film as a mask. The controller 200 causes the coating and developing apparatus 2 to perform the coating and developing process on each of the plurality of works W in the same manner as described above.
The specific structure of the substrate processing apparatus is not limited to the structure of the coating-developing apparatus 2 exemplified above. The substrate processing apparatus may have any configuration as long as it includes a heat treatment means for performing heat treatment on a coating film of the processing liquid and a control device capable of controlling the heat treatment means.
(Heat treatment Unit)
Next, an example of the heat processing unit U2 of the processing module 11 will be described in detail with reference to fig. 3 to 8. The heat treatment unit U2 shown in fig. 3 may be disposed under an atmospheric atmosphere. The heat treatment unit U2 is configured to be able to heat-treat the workpiece W in a state where the periphery of the workpiece W is in a low-oxygen atmosphere. In the present invention, "low oxygen atmosphere (state)" means an atmosphere (state) in which the oxygen concentration is lower than that in the atmosphere.
In one example, heat treatment unit U2 heat treats workpiece W in a low oxygen state with an oxygen concentration of 400ppm or less. The oxygen concentration in the atmosphere around the workpiece W at the time of heat treatment in the heat treatment unit U2 may be 200ppm or less, 100ppm or less, or 50ppm or less. For example, by applying heat treatment to a coating film (coating film) of a treatment liquid for forming an SOC film in a low-oxygen atmosphere, the density of the SOC film cured by the heat treatment is improved, and the resistance (difficulty in etching) in etching treatment after the coating-developing treatment is improved.
The heat treatment performed by the heat treatment unit U2 shown in fig. 3 includes: heat treatment for applying heat to a workpiece W (coating film) to be treated; and a cooling process of cooling the workpiece W (coating film) subjected to the heating process. The heat treatment unit U2 includes, for example: a housing section 20; a cooling processing unit (30); a heat treatment unit (50); and a conveying section 190 for conveying the workpiece W between the cooling processing section 30 and the heating processing section 50.
The housing portion 20 houses the respective members of the heat treatment unit U2. The housing 20 includes, for example, a case 22, a bottom plate 24, a shutter 26, and a shutter drive unit 28. The case 22 is a container for housing a part of the cooling unit 30, a part of the heating unit 50, and the conveying unit 190. The housing 22 is formed in a rectangular parallelepiped shape, for example. The bottom wall of the housing 22 may be placed on a horizontal surface (e.g., a bottom surface) inside the process module 11. The housing 22 may be rectangular in shape in plan view.
The bottom plate 24 divides the space formed by the housing 22 into an upper region V1 and a lower region V2 arranged in the up-down direction. The upper region V1 is subjected to heating and cooling, and the lower region V2 is provided with a driving device for driving the respective members. The bottom plate 24 may be a cooling plate (e.g., a water-cooling plate) having a heat insulating function. In one example, the bottom plate 24 is made of metal, and a cooling flow path through which cooling water flows is provided inside the bottom plate.
A feed port 22a for feeding and discharging the workpiece W is formed in a side wall of the housing 22 located at one end in the longitudinal direction in a plan view, and the shutter 26 is configured to be able to open and close the feed port 22 a. The shutter driving unit 28 can move the shutter 26 in the vertical direction by a power source such as a motor. The shutter driving unit 28 can move the shutter 26 between a position where the inlet 22a is closed and a position where the inlet 22a is not closed.
The cooling processing unit 30 performs a process of cooling the workpiece W in the upper region V1. The cooling processing unit 30 is disposed in the longitudinal direction in the casing 22 at a position closer to the inlet 22a than a side wall opposite to the side wall where the inlet 22a is provided. In the example shown in fig. 3, the inlet 22a, the cooling processing section 30, and the heating processing section 50 are arranged in this order along the longitudinal direction. The cooling processing unit 30 includes, for example, a cooling plate 32, a workpiece lifting unit 34, and a gas supply unit 40.
The cooling plate 32 is a plate on which the workpiece W heated by the heat treatment unit 50 is placed and which cools the workpiece W. The cooling plate 32 may be formed in a substantially circular plate shape. The cooling plate 32 is made of metal such as aluminum, silver, or copper having high thermal conductivity. A cooling flow path through which cooling water or cooling gas for reducing the temperature of the workpiece W flows is provided inside the cooling plate 32.
The work lifting unit 34 lifts and lowers the work W above the cooling plate 32. The workpiece lifting and lowering unit 34, for example, lifts and lowers the workpiece W between a processing position where the workpiece W is placed on the support surface 32a of the cooling plate 32 (the upper surface of the cooling plate 32) and a delivery position where the workpiece W is delivered to and received from the conveying unit 190 and the like above the cooling plate 32 at a distance. The work lifting unit 34 includes a plurality of (e.g., 3) support pins 36 and a lifting drive unit 38.
The support pin 36 is a pin for supporting the workpiece W from below. The support pins 36 are inserted into through holes formed in the cooling plate 32 and are formed to extend in the vertical direction. The plurality of support pins 36 are arranged at equal intervals in the circumferential direction around the center of the cooling plate 32. The elevation driving unit 38 can elevate and lower the plurality of support pins 36 by a power source such as a motor or an elevation cylinder. The elevation drive unit 38 raises the support pin 36 so that the upper end of the support pin 36 protrudes upward from the support surface 32a of the cooling plate 32, for example, to raise the workpiece W to the joining position. The elevation drive unit 38 lowers the support pins 36 so that the upper ends of the support pins 36 are positioned below the support surfaces 32a, thereby lowering the workpiece W to the processing position (placing the workpiece W on the support surfaces 32a of the cooling plate 32). The elevation driving part 38 is provided on the base plate 24.
The gas supply unit 40 supplies a gas having an oxygen concentration lower than the atmospheric air to the space around the cooling plate 32 in order to keep the space around the cooling plate 32 in a low-oxygen state during the cooling process for the workpiece W. For example, the gas supply unit 40 supplies a gas having an oxygen concentration lower than the atmosphere (low-oxygen gas) to the support surface 32a of the cooling plate 32. The low-oxygen gas supplied from the gas supply unit 40 may be any gas as long as the oxygen concentration is lower than that of the atmosphere. Specific examples of the low-oxygen gas supplied from the gas supply unit 40 include inert gases (e.g., nitrogen gas). The gas supply section 40 has, for example, a head 42, a supply path 44, a gas source 46, and an on-off valve 48.
The head 42 is provided above the cooling plate 32, and is capable of discharging low-oxygen gas from above to the cooling plate 32 (the workpiece W on the cooling plate 32). The head 42 can discharge gas from above to substantially the entire surface of the support surface 32a of the cooling plate 32, for example. A horizontally extending discharge space is formed in the head 42, and a plurality of discharge holes 42a that penetrate between the discharge space and a space other than the head 42 are formed in a lower surface (a surface facing the cooling plate 32) of the head 42. A plurality of discharge holes 42a may be scattered on the lower surface of the head 42.
The heat treatment unit 50 is used to perform the treatment of the heat workpiece W in the upper region V1. The heat treatment unit 50 is arranged along the longitudinal direction of the casing 22 in parallel with the cooling treatment unit 30. The heat treatment section 50 includes, for example, a heating section 52, a workpiece lifting section 60 (substrate lifting section), and a chamber 70.
The heating unit 52 is configured to support and heat the workpiece W on which the coating film is formed. Specifically, as shown in fig. 4, the heating section 52 is configured to support the rear surface Wb of the workpiece W having the coating film of the treatment liquid formed on the front surface Wa and heat the supported workpiece W. The heating portion 52 is disposed in the housing 22 (in the upper region V1). Heating section 52 has, for example, a hot plate 54, a heat insulating plate 56, and a support bottom wall 58. The support bottom wall 58, the heat insulating plate 56, and the heat plate 54 are stacked in this order from below.
The hot plate 54 has a support surface 54a on which the workpiece W is placed, and is capable of transferring heat to the supported workpiece W. A heater 54b is provided inside the hot plate 54. The hot plate 54 is made of metal such as aluminum, silver, or copper having high thermal conductivity. The heat plate 54 is formed in a disc shape, and is disposed so that a support surface 54a (upper surface) is horizontal. The diameter of the hot plate 54 is larger than the diameter of the workpiece W.
The heat shield plate 56 supports the rear surface of the heat plate 54 on the side opposite to the support surface 54a, and shields downward heat transfer from the heat plate 54. The heat insulating plate 56 is formed in a circular plate shape like the heat plate 54, and the diameter of the heat insulating plate 56 is substantially the same as that of the heat plate 54. The support bottom wall 58 is formed in a disc shape, and the diameter of the support bottom wall 58 is larger than that of the heat plate 54 (heat shield plate 56). Support bottom wall 58 is used to support hot plate 54 and heat shield plate 56. The support bottom wall 58 is disposed above the bottom plate 24 with a space. The support bottom wall 58 may be connected (fixed) to the bottom plate 24 via a fixing member (not shown).
The work lifting unit 60 lifts and lowers the work W above the hot plate 54. The workpiece lifting and lowering unit 60, for example, lifts and lowers the workpiece W between a processing position where the workpiece W is placed on the support surface 54a of the hot plate 54 and a delivery position where the workpiece W is delivered to and received from the conveying unit 190 above the hot plate 54 at a distance. As shown in fig. 3, the work lifting unit 60 includes a plurality of (e.g., 3) support pins 62 and a lifting drive unit 64.
The support pin 62 is a pin for supporting the workpiece W from below. The plurality of support pins 62 are formed to extend in the vertical direction. As shown in fig. 4, the plurality of support pins 62 are inserted into the plurality of through holes 52a provided in the heating portion 52, respectively. That is, each support pin 62 of the plurality of support pins 62 is inserted into a corresponding one of the plurality of through holes 52 a. The through-holes 52a are formed to penetrate the hot plate 54, the heat insulating plate 56, and the support bottom wall 58 in the vertical direction. The support pins 62 (the through holes 52a) are arranged at equal intervals in the circumferential direction around the center CP of the hot plate 54 (see also fig. 7).
The elevation driving unit 64 shown in fig. 3 can elevate and lower the plurality of support pins 62 by a power source such as a motor or an elevation cylinder. The elevation driving unit 64 raises the support pin 62 so that the upper end of the support pin 62 protrudes upward from the support surface 54a of the hot plate 54, for example, to raise the workpiece W to the joining position. The elevation drive unit 64 lowers the support pins 62 so that the upper ends of the support pins 62 are positioned below the support surfaces 54a, thereby lowering the workpiece W to the processing position (placing the workpiece W on the support surfaces 54a of the hot plate 54). The elevation drive unit 64 is disposed in the lower region V2 below the bottom plate 24. Each support pin 62 is also inserted into a through hole provided in the bottom plate 24.
As shown in fig. 4, chamber 70 covers the periphery and above heated portion 52 (particularly, hot plate 54). The chamber 70 has a peripheral wall portion 72 and a lid portion 74. The peripheral wall portion 72 surrounds the periphery (side) of the heating portion 52. The peripheral wall portion 72 is formed in an annular shape extending upward from the peripheral edge portion of the support bottom wall 58 of the heating portion 52. The height (length in the vertical direction) of the peripheral wall portion 72 may be equal to or greater than the total height of the heat plate 54 and the height of the heat insulating plate 56. The side surfaces (peripheral surfaces) of heat plate 54 and heat insulating plate 56 face peripheral wall portion 72. The peripheral wall portion 72 is disposed with a gap g1 formed between the peripheral wall portion 72 and the heating portion 52 (more specifically, the heat plate 54 and the heat insulating plate 56). The gap g1 (the space between the peripheral wall portion 72 and the heating portion 52) is formed in an annular shape so as to surround the entire periphery of the heat plate 54 (see also fig. 7).
The lid portion 74 covers the heating unit 52 (more specifically, covers the workpiece W supported by the hot plate 54) with a gap g2 formed between the lid portion 74 and the peripheral wall portion 72. Since the lid 74 does not contact the peripheral wall 72, the generation of foreign matter accompanying the contact between these components can be prevented. The lid portion 74 covers the workpiece W on the hot plate 54, thereby forming a processing space S for performing a heat treatment above the hot plate 54. The processing space S is a space that is closed to such an extent that the coating film formed on the workpiece W can be sufficiently heated in a state where a part thereof is connected to an external space via the gap g 2. The lid 74 is provided in the housing 22 so as to be movable in the vertical direction.
As shown in fig. 3, the heat treatment unit 50 includes an elevation driving unit 68 for moving the lid 74 in the vertical direction. The elevation drive unit 68 is disposed in the lower region V2, and can move the lid 74 in the vertical direction by a power source such as a motor. The processing space S can be formed by the lid 74 by lowering the lid 74 to be close to the peripheral wall portion 72 by the elevation driving portion 68. By raising the lid 74 (away from the peripheral wall 72) by the elevation driving unit 68 to such an extent that the workpiece W cannot be sufficiently heated, the space above the hot plate 54 can be opened to the upper region V1.
As shown in fig. 4, the cover portion 74 includes, for example, a top plate 76 and a side wall 78. The top plate 76 is formed in a circular plate shape having a diameter approximately the same as that of the support bottom wall 58. The top plate 76 is disposed to face the support surface 54a of the heat plate 54 in the vertical direction. That is, the top plate 76 covers the support surface 54a from above. The side wall 78 is an annular member formed to extend downward from the outer edge of the top plate 76, and is disposed to face the peripheral wall portion 72 in the vertical direction. Annular side wall 78 surrounds bearing surface 54a of hot plate 54.
In a state where the lid portion 74 is close to the peripheral wall portion 72, a gap g2 is formed between the lower end of the side wall 78 and the upper end of the peripheral wall portion 72. The gap g2 (the space between the side wall 78 and the peripheral wall portion 72) is formed in an annular shape so as to surround the periphery of the hot plate 54 (the processing space S). The gap g2 is connected to the processing space S, and the gap g2 has a narrower interval at the inner end g21 than at the outer end g22 (see fig. 6).
In order to maintain the processing space S in a low-oxygen atmosphere in the heat treatment of the workpiece W, the heat treatment unit 50 further includes a gas supply unit for supplying a low-oxygen gas. Specifically, the heat treatment unit 50 further includes a1 st gas supply unit 80, a 2 nd gas supply unit 90, and a3 rd gas supply unit 100.
The 1 st gas supply unit 80 shown in fig. 4 is for supplying a gas having an oxygen concentration lower than that of the atmosphere into the processing space S. The low-oxygen gas (hereinafter referred to as "1 st gas") supplied from the 1 st gas supply unit 80 may be any gas as long as the oxygen concentration is lower than that of the atmosphere. Specific examples of the 1 st gas include inert gases (e.g., nitrogen gas). When the 1 st gas is continuously supplied from the 1 st gas supply unit 80 in a state where the processing space S is formed, the processing space S is brought into a low oxygen state. The 1 st gas supply section 80 has, for example, a head 82, a supply path 84, a gas source 86, and an on-off valve 88.
The head 82 constitutes a part of the lid portion 74 (top plate 76). The head 82 can discharge gas to the workpiece W on the heat plate 54 from above in the processing space S in the chamber 70. The head 82 can discharge the 1 st gas to substantially the entire surface Wa of the workpiece W, for example. A discharge space extending in a horizontal plane is formed in the head 82, and a plurality of discharge holes 82a penetrating between the discharge space and the processing space S are formed in the lower surface of the top plate 76 (the surface of the head 82 facing the workpiece W on the hot plate 54).
Fig. 5 shows a schematic view of the cover 74 illustrated in fig. 4 from below. As shown in fig. 5, a plurality of discharge holes 82a are scattered on the lower surface of the top plate 76. A plurality of discharge holes 82a are scattered at a substantially uniform density in a portion (hereinafter, referred to as "opposed portion") of the lower surface of top plate 76 that is opposed to workpiece W on hot plate 54. The discharge holes 82a are arranged in a dispersed manner in the opposing portion.
The opening areas of the plurality of discharge holes 82a may be substantially the same as each other. In the case where the opening areas of the plurality of discharge holes 82a are substantially the same as each other, the plurality of discharge holes 82a may be distributed so that the proportion of the opening area of the discharge hole 82a per unit area of the opposing portion is uniform. The shape of the discharge hole 82a may be a circle or an ellipse as viewed from below. The plurality of discharge holes 82a may be dispersed in such a manner that the interval between the adjacent discharge holes 82a is substantially constant. As an example, in the case where the plurality of discharge holes 82a are two-dimensionally arranged in the lateral direction and the longitudinal direction, the intervals between the discharge holes 82a adjacent in the lateral direction may be uniform, and the intervals between the discharge holes 82a adjacent in the longitudinal direction may also be uniform.
Returning to fig. 4, the plurality of discharge holes 82a are connected to the supply path 84 via a discharge space. The gas source 86 as a supply source of the 1 st gas can supply the 1 st gas to the discharge space through the supply path 84. An on-off valve 88 is provided on the supply path 84 for switching the on-off state of the supply path 84. When the on-off valve 88 is in the open state, the 1 st gas is supplied (discharged) from the plurality of discharge holes 82a, and when the on-off valve 88 is in the closed state, the supply of the 1 st gas from the plurality of discharge holes 82a is stopped.
Fig. 6 shows an example of the 2 nd gas supply unit 90. The 2 nd gas supply unit 90 supplies a gas having an oxygen concentration lower than that of the atmosphere to the gap g2 between the peripheral wall portion 72 and the lid portion 74. The low-oxygen gas supplied from the 2 nd gas supply unit 90 (hereinafter referred to as "2 nd gas") may be any gas as long as the oxygen concentration is lower than that of the atmosphere. Specific examples of the 2 nd gas include inert gases (e.g., nitrogen gas). The 2 nd gas supplied from the 2 nd gas supply unit 90 to the gap g2 flows into the processing space S through the inner end g21 of the gap g2 or flows into a region outside the chamber 70 (located in the upper region V1 and outside the processing space S and the gap g 2) through the outer end g22 of the gap g 2. As described above, when the opening of the end g21 is smaller than the opening of the end g22, the 2 nd gas supplied to the gap g2 flows into the region outside the chamber 70 more easily than the processing space S. The 2 nd gas supply section 90 includes, for example, a gas discharge section 92, a supply path 94, a gas source 96, and an on-off valve 98.
The gas discharge portion 92 is provided at the upper end portion of the peripheral wall portion 72, and is capable of discharging the 2 nd gas from the inside of the peripheral wall portion 72 into the gap g 2. The gas discharge portion 92 includes a plurality of discharge holes 92a and a supply path 92b (gas supply path). The discharge holes 92a are provided in the upper end surface of the peripheral wall portion 72. The discharge holes 92a are arranged at predetermined intervals in the circumferential direction around the center CP of the hot plate 54 (see fig. 7). The supply path 92b is provided inside the upper end portion of the peripheral wall portion 72, and is formed in an annular shape so as to extend in the circumferential direction around the center CP of the heat plate 54. The supply path 92b and the gap g2 are connected via a plurality of discharge holes 92a, and the 2 nd gas supplied to the supply path 92b is discharged to the gap g2 through the plurality of discharge holes 92 a.
The supply path 92b inside the peripheral wall portion 72 is connected to a supply path 94 extending to the outside of the peripheral wall portion 72. The gas source 96 as a supply source of the 2 nd gas can supply the 2 nd gas to the plurality of discharge holes 92a via the supply paths 94 and 92 b. An on-off valve 98 is provided on the supply path 94 for switching the on-off state of the supply path 94. When the on-off valve 98 is in the open state, the 2 nd gas is supplied (discharged) from the plurality of discharge holes 92a, and when the on-off valve 98 is in the closed state, the supply of the 2 nd gas from the plurality of discharge holes 92a is stopped.
The 3 rd gas supply unit 100 shown in fig. 3 or 7 is used for supplying a gas having an oxygen concentration lower than the atmospheric air to the outside of the processing space S in the casing 22. Specifically, the 3 rd gas supply unit 100 is configured to supply a low-oxygen gas to the space outside the chamber 70 (outside the processing space S and the gap g 2) in the upper region V1. The low-oxygen gas supplied from the 3 rd gas supply unit 100 (hereinafter referred to as "3 rd gas") may be any gas as long as the oxygen concentration is lower than the atmospheric air. Specific examples of the gas 3 include inert gases (e.g., nitrogen gas). The 3 rd gas supply unit 100 supplies the 3 rd gas so that the periphery of the chamber 70 in the upper region V1 is filled with the 3 rd gas (the periphery of the chamber 70 is in a low oxygen state). The 3 rd gas supply section 100 includes, for example, a head 102, a supply path 104, a gas source 106, and an on-off valve 108.
The head 102 is disposed above the chamber 70 (the cover 74). The head 102 is disposed between the chamber 70 and the cooling unit 30 in the direction in which the heating unit 50 and the cooling unit 30 are aligned. As shown in fig. 7, the head 102 is formed in a rod shape so as to extend in a direction orthogonal to the direction in which the heat treatment unit 50 and the cooling treatment unit 30 are arranged and the vertical direction. The head 102 has a cross section orthogonal to the extending direction and has a quadrangular shape (e.g., a square shape). A discharge space extending in the extending direction thereof is formed in the head portion 102. A plurality of discharge holes 102a that penetrate between the discharge space and the upper region V1 are formed in one side surface of the head portion 102 (the side surface of the head portion 102 that is opposite to the side surface facing the cooling process portion 30). The discharge holes 102a are arranged at predetermined intervals along the extending direction of the head 102.
The discharge holes 102a are connected to the supply path 104 via a discharge space in the head 102. The gas source 106 as a3 rd gas supply source can supply the 3 rd gas to the discharge space in the head 102 via the supply path 104. The switching valve 108 is provided on the supply path 104 for switching the switching state of the supply path 104. When the on-off valve 108 is in the open state, the 3 rd gas is supplied (discharged) from the plurality of discharge holes 102a, and when the on-off valve 108 is in the closed state, the supply of the 3 rd gas from the plurality of discharge holes 102a is stopped.
As described above, in the heat treatment unit U2 illustrated in fig. 3, the gas supply unit 40 is provided to bring the periphery of the workpiece W into a low oxygen state in the cooling process, and the 1 st gas supply unit 80, the 2 nd gas supply unit 90, and the 3 rd gas supply unit 100 are provided to bring the periphery of the workpiece W into a low oxygen state in the heating process. The 1 st gas, the 2 nd gas, the 3 rd gas, and the low-oxygen gas (hereinafter, referred to as "4 th gas") from the gas supply portion 40 may be the same kind of gas as each other. In the case of using the same kind of gas as each other, the concentrations of the main components (e.g., nitrogen) of the low-oxygen gas may be the same as each other or may be different from each other. In the case of using the same kind of gas having the same concentration of the main component, the 4 gas supply portions may share one gas source.
The heat treatment unit 50 further includes an exhaust unit for exhausting the treatment space S in order to recover sublimates generated during the heat treatment of the workpiece W or to maintain the treatment space S in a low oxygen state. Specifically, as shown in fig. 4, the heat treatment unit 50 further includes a1 st exhaust unit 110 and a 2 nd exhaust unit 150.
The 1 st exhaust unit 110 (exhaust unit) is used to exhaust gas present in the processing space S to the outside of the processing space S (outside of the casing 22). The 1 st exhaust unit 110 is configured to be capable of exhausting the processing space S by an exhaust amount (an exhaust amount of gas per unit time) larger than a supply amount (a supply amount per unit time) of the 1 st gas from the 1 st gas supply unit 80. The 1 st exhaust part 110 has, for example, an outer peripheral exhaust part 120, a center exhaust part 130, and a peripheral exhaust part 140.
The outer peripheral exhaust portion 120 is used to exhaust the processing space S from an outer peripheral region outside the peripheral edge Wc of the workpiece W supported by the heating portion 52 (hot plate 54). The outer peripheral exhaust portion 120 has, for example, a plurality of exhaust holes 122, an exhaust path 124, and an on-off valve 126. The plurality of gas discharge holes 122 are provided outside the 1 st gas supply unit 80, and the outer periphery gas discharge unit 120 can discharge the gas in the processing space S from above the processing space S to the outside of the casing 22 at the outer periphery in the processing space S via the plurality of gas discharge holes 122 and the gas discharge path 124. As illustrated in fig. 5, the plurality of gas discharge holes 122 are provided outside the head portion 82 of the 1 st gas supply portion 80.
The plurality of exhaust holes 122 are provided in the top plate 76 of the lid 74, and each open to an outer peripheral portion of the lower surface of the top plate 76 (i.e., an outer peripheral portion of the upper surface in the processing space S). The plurality of exhaust holes 122 are annularly arranged outside the head 82. The plurality of exhaust holes 122 are located outside the peripheral edge Wc of the workpiece W on the hot plate 54 when viewed from above. In other words, the plurality of exhaust holes 122 do not overlap the workpiece W on the hot plate 54 when viewed from above. The shape of the exhaust hole 122 in the top plate 76 is not particularly limited.
The exhaust path 124 is provided with an exhaust pump, and the gas in the processing space S can be exhausted to the outside of the casing 22 through the plurality of exhaust holes 122 by suction of the exhaust pump. An on-off valve 126 is provided on the exhaust path 124 for switching the on-off state of the exhaust path 124. When the on-off valve 126 is in the open state, the gas in the processing space S is discharged from the plurality of gas discharge holes 122, and when the on-off valve 126 is in the closed state, the gas in the processing space S is stopped from being discharged through the plurality of gas discharge holes 122.
The central exhaust portion 130 is for exhausting the gas in the processing space S upward from a central region inside the peripheral edge Wc of the workpiece W supported by the heating portion 52. The outer edge of the central region is determined by, for example, a circle having a radius of about half the radius of the workpiece W when viewed from above. However, the center region is not limited to the above, and for example, the center exhaust portion 130 may be configured to exhaust air from a position outside of about half the radius of the workpiece W. The central exhaust portion 130 has, for example, an exhaust hole 132, an exhaust path 134, and an on-off valve 136.
The exhaust hole 132 is provided in the head 82 of the 1 st gas supply part 80, and the center CP of the hot plate 54 is located in the exhaust hole 132. It may be that the center of exhaust vent 132 substantially coincides with the center CP of hot plate 54, as illustrated in fig. 5. Alternatively, the center of the exhaust hole 132 may be eccentric with respect to the center CP of the heat plate 54 in the central region. The central exhaust portion 130 may have a plurality of exhaust holes provided in a region of the head portion 82 facing the central region, instead of or in addition to the single exhaust hole 132. The plurality of exhaust holes (e.g., 4 exhaust holes) may be arranged at equal intervals in the circumferential direction around the center CP.
The exhaust hole 132 is provided in the head 82 so as to open in the processing space S. Specifically, the exhaust hole 132 is provided in the top plate 76 including the head 82, and opens at the center of the lower surface of the top plate 76. The shape of the exhaust hole 132 in the top plate 76 including the head 82 is not particularly limited. As an example, the shape of the exhaust hole 132 is a circle or an ellipse when viewed from the top-bottom direction. The size (diameter) of the exhaust hole 132 may be larger than the size (diameter) of the exhaust hole 82a of the 1 st gas supply part 80, or may be larger than the exhaust hole 132 of the outer circumferential exhaust part 120. The center exhaust portion 130 can exhaust the gas in the processing space S from above the processing space S to the outside of the casing 22 in the center region in the processing space S via the exhaust hole 132 and the exhaust path 134.
The exhaust path 134 is provided with an exhaust pump, and the gas in the processing space S can be exhausted to the outside of the casing 22 through the exhaust hole 132 by suction of the exhaust pump. An on-off valve 136 is provided on the exhaust path 134 for switching the on-off state of the exhaust path 134. When the on-off valve 136 is in the open state, the gas in the processing space S is discharged from the gas discharge hole 132, and when the on-off valve 136 is in the closed state, the gas in the processing space S is stopped from being discharged through the gas discharge hole 132.
The peripheral edge exhaust portion 140 is used to exhaust the processing space S from the gap g1 between the peripheral wall portion 72 and the heating portion 52 (the heat plate 54). The peripheral edge exhaust portion 140 can exhaust the gas in the processing space S from the upper end portion (the end portion opening to the processing space S) of the gap g 1. As shown in fig. 6, the peripheral exhaust portion 140 has, for example, exhaust paths 142 and 144 and an on-off valve 146.
The exhaust path 142 is provided inside the peripheral wall portion 72, and is formed in an annular shape so as to extend in the circumferential direction around the center CP of the heat plate 54. The gap g1 and the exhaust path 142 are connected by a plurality of exhaust holes 142a that open at the gap g 1. The plurality of air discharge holes 142a are provided in the inner peripheral surface of the peripheral wall portion 72 and arranged at predetermined intervals in the circumferential direction. Inside the peripheral wall portion 72, the exhaust passage 142 is disposed below the supply passage 92b of the 2 nd gas supply portion 90. The supply path 92b and the exhaust path 142 may be disposed in a state of being close to each other. For example, the supply path 92b and the exhaust path 142 are arranged to such an extent that the temperature of the 2 nd gas supplied to the gap g2 via the supply path 92b and the discharge hole 92a is increased by the exhaust gas via the exhaust path 142.
An exhaust passage 142 inside the peripheral wall portion 72 is connected to an exhaust passage 144 extending to the outside of the peripheral wall portion 72. The exhaust path 144 is provided with an exhaust pump, and the gas in the processing space S can be exhausted to the outside of the casing 22 through the gap g1 and the exhaust paths 142 and 144 by suction of the exhaust pump. The on-off valve 146 is provided on the exhaust path 144. When the on-off valve 146 is in the open state, the gas in the processing space S is discharged from the gap g1, and when the on-off valve 146 is in the closed state, the gas in the processing space S is stopped from being discharged through the gap g 1.
The 1 st exhaust section 110 illustrated above is configured such that the sum of the exhaust amounts of the outer peripheral exhaust section 120 and the peripheral exhaust section 140 is larger than the supply amount of the 1 st gas from the 1 st gas supply section 80 and smaller than the sum of the supply amount of the 1 st gas and the supply amount of the 2 nd gas from the 2 nd gas supply section 90. The 1 st exhaust section 110 is configured such that the sum of the exhaust amounts of the outer peripheral exhaust section 120, the center exhaust section 130, and the peripheral exhaust section 140 is larger than the sum of the supply amounts of the 1 st gas and the 2 nd gas.
As shown in fig. 4, the 2 nd exhaust part 150 (pin exhaust part) is configured to be able to exhaust the processing space S from the plurality of through holes 52a into which the plurality of support pins 62 for raising and lowering the workpiece W are inserted. In heating the workpiece W, the plurality of through holes 52a are closed by the workpiece W because the workpiece W is placed on the support surface 54a of the hot plate 54. Therefore, when the workpiece W is positioned above the support surface 54a with a gap, the process space S can be exhausted by the 2 nd exhaust unit 150. The 2 nd exhaust unit 150 includes, for example, a plurality of independent exhaust paths 152, a common exhaust path 154, and an on-off valve 156.
The independent exhaust paths 152 are disposed below the heating portion 52 (support bottom wall 58) and are connected to the through holes 52a, respectively. One of the independent exhaust paths 152 is connected to one of the through holes 52a (corresponding through hole 52a) of the plurality of through holes 52 a. The common exhaust path 154 is connected to the plurality of independent exhaust paths 152. The gas discharged from the 2 nd exhaust part 150 passes through the plurality of independent exhaust paths 152, and flows out of the casing 22 after joining the common exhaust paths 154.
An exhaust pump is provided in the common exhaust path 154, and the gas in the processing space S can be exhausted to the outside of the casing 22 through the plurality of through holes 52a by suction by the exhaust pump. An on-off valve 156 is provided on the common exhaust path 154 for switching the on-off state of the common exhaust path 154. In a state where the workpiece W is not placed on the support surface 54a of the hot plate 54, when the open/close valve 156 is in an open state, the gas in the processing space S is discharged from the plurality of through holes 52a, and when the open/close valve 156 is in a closed state, the gas in the processing space S is stopped from being discharged through the plurality of through holes 52 a.
Here, an example of an exhaust passage forming portion for forming one independent exhaust passage 152 will be described with reference to fig. 8. As shown in fig. 8, the independent exhaust path 152 includes: a1 st region 152a connected to the corresponding through hole 52a and extending downward (e.g., vertically downward) from the through hole 52 a; and a 2 nd region 152b connected to the 1 st region 152a and extending in a direction (for example, a horizontal direction) intersecting with an extending direction of the 1 st region 152 a. In addition, the 2 nd exhaust part 150 further includes: a1 st exhaust path forming portion 162 for forming the 1 st region 152 a; and a 2 nd exhaust path forming part 166 for forming the 2 nd region 152 b.
The 1 st exhaust path forming portion 162 is formed in a cylindrical shape (for example, a cylindrical shape) and extends in the vertical direction. The upper end of the 1 st exhaust path forming portion 162 is connected (fixed) to the lower surface of the support bottom wall 58. The 1 st exhaust path forming portion 162 is disposed so as to surround the outer edge of the corresponding through hole 52a when viewed in the vertical direction. A bellows 164 is provided in a part (for example, an intermediate part in the vertical direction) of the 1 st exhaust path forming portion 162 so as to be expandable and contractible along the extending direction of the 1 st region 152 a. By including the bellows 164 in the 1 st exhaust path forming portion 162, the 1 st exhaust path forming portion 162 can be expanded and contracted in the vertical direction, and the adhesion between the support bottom wall 58 and the upper end of the 1 st exhaust path forming portion 162 can be maintained. One end of the 2 nd exhaust path forming part 166 is connected to the lower end of the 1 st exhaust path forming part 162.
The 2 nd exhaust path forming portion 166 is formed in a cylindrical shape (for example, a square cylindrical shape) and extends in the horizontal direction. The 2 nd exhaust path forming part 166 is provided on the bottom plate 24 that separates the upper region V1 and the lower region V2. The 2 nd exhaust path forming part 166 includes a bottom part 168 opposed to (or in contact with) the bottom plate 24. A connection hole 168a is formed in the bottom 168 at one end of the 2 nd exhaust passage forming portion 166 (a portion connected to the 1 st exhaust passage forming portion 162). The connection hole 168a is provided at a position overlapping the through hole 52a and the through hole 24a of the bottom plate 24. One support pin 62 is inserted into the attachment hole 168a and the through hole 24a in addition to the through hole 52 a. The support pin 62 is disposed in the 1 st region 152a along the extending direction of the 1 st region 152 a.
The connection hole 168a is, for example, circular, and the size (diameter) of the opening of the connection hole 168a is larger than the diameter of the support pin 62. When the size of the opening of the connecting hole 168a is larger than the diameter of the support pin 62, the support pin 62 can be displaced in the horizontal direction. For example, the size of the opening of the connection hole 168a is set to about 1.5 to 3 times the size of the support pin 62. The size of the through hole 24a connecting the upper region V1 and the lower region V2 is larger than the size of the connection hole 168 a. In the structure of the exhaust path forming portion, since a gap is formed between the support pin 62 and the inner peripheral surface of the connection hole 168a, gas flows from the lower region V2 into the independent exhaust path 152.
In order to suppress the inflow of gas from the lower region V2, the 2 nd exhaust part 150 further includes a sealing member 170 for closing the connection hole 168 a. The seal member 170 is disposed on the bottom portion 168 so as to cover the connection hole 168a from above around the support pin 62. The sealing member 170 is formed in a circular shape or a polygonal shape in plan view, for example, and has an insertion hole 170a into which the support pin 62 is inserted at substantially the center thereof. The insertion hole 170a is set to be smaller than the diameter of the connection hole 168a and slightly larger than the diameter of the support pin 62.
The seal member 170 is movable relative to the connection hole 168a, and moves together with the displacement of the support pin 62 in the horizontal direction. The outer diameter (width) of the sealing member 170 is larger than the connection hole 168a, and is set to such an extent as to cover the connection hole 168a even if the support pin 62 is displaced in the horizontal direction within the connection hole 168 a. Further, a restricting portion for restricting the movement of the sealing member 170 in the up-down direction may be provided at an end portion of the 2 nd exhaust path forming portion 166 where the sealing member 170 is disposed, and a part of the bottom portion 168 (a portion where the connection hole 168a is provided) may be located above the other portion.
Returning to fig. 3, the conveying unit 190 for conveying the workpiece W between the cooling processing unit 30 and the heating processing unit 50 includes, for example, a holding arm 192 and a horizontal driving unit 194. The holding arm 192 is disposed above the cooling plate 32 and the heating unit 52 in the upper region V1, and horizontally holds the workpiece W. The holding arm 192 is configured to be able to transfer the workpiece W to and from the plurality of support pins 36 or the plurality of support pins 62.
The horizontal driving unit 194 is disposed in the lower region V2, and can move the holding arm 192 in the direction in which the cooling process unit 30 and the heating process unit 50 are aligned by a power source such as a motor. The horizontal driving unit 194 can move the holding arm 192 between a position where the holding arm 192 is disposed vertically above the cooling plate 32 and a position where the holding arm 192 is disposed vertically above the heating unit 52 (heat plate 54).
(control device)
The control device 200 controls the coating and developing device 2 including the heat treatment unit U2. As shown in fig. 2, the control device 200 includes a storage unit 202 and a control unit 204 as functional components. The storage unit 202 stores a program for operating each unit of the coating and developing apparatus 2 including the heat processing unit U2. The storage unit 202 also stores various data (for example, information related to an instruction signal for operating the heat treatment unit U2) and information from sensors and the like provided in each unit. The storage section 202 is, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an optical magnetic recording disk. The program may be contained in an external storage device separate from the storage unit 202 or an intangible medium such as a propagated signal. The program may be installed from such other media to the storage unit 202, and the storage unit 202 may store the program. The control unit 204 controls the operations of the respective units of the coating and developing apparatus 2 based on the program read from the storage unit 202.
The control device 200 is constituted by one or more control computers. For example, the control device 200 has a circuit 210 shown in fig. 9. The circuit 210 has: one or more processors 212, memory (memory)214, storage (storage)216, timer 222, and input-output port 218. The storage unit 216 includes a storage medium readable by a computer, such as a hard disk. The storage medium stores a program for causing the control device 200 to execute a heat treatment method described later. The storage medium may be a readable medium such as a nonvolatile semiconductor memory, a magnetic disk, and an optical disk. The memory 214 is used to temporarily store a program loaded from a storage medium of the storage unit 216 and an operation result of the processor 212. The processor 212 and the memory 214 cooperate to execute the programs, thereby constituting the functional blocks described above. The timer 222 measures the elapsed time by, for example, counting a reference pulse of a certain period. The input/output port 218 inputs/outputs an electric signal to/from the thermal processing unit U2 in accordance with an instruction from the processor 212.
The hardware configuration of the control device 200 is not necessarily limited to the configuration of each functional block by a program. For example, each functional block of the control device 200 may be formed of a dedicated logic Circuit or an ASIC (Application Specific Integrated Circuit) Integrated therewith.
[ method of treating substrate ]
Next, a heat treatment method performed in the heat treatment unit U2 as an example of the substrate treatment method will be described with reference to fig. 10 to 15. Fig. 10 is a flowchart showing an example of the heat treatment method for 1 workpiece W. First, in a state where the supply of the low-oxygen gas and the exhaust from the exhaust unit are stopped, the controller 204 of the control device 200 controls the conveyor a3 and the heat treatment unit U2 so that the workpiece W to be processed is fed to the heat treatment unit U2 (step S11). For example, the controller 204 controls the conveyor A3 and the workpiece lifting unit 34 so that the workpiece W is transferred from the conveyor A3 to the support pins 36 of the cooling unit 30. Then, the controller 204 moves the shutter 26 by the shutter driving unit 28 to close the inlet 22a, thereby sealing the inside of the heat treatment unit U2.
Next, the controller 204 controls the plurality of gas suppliers to start supplying the low-oxygen gas into the heat treatment unit U2 (step S12). Specifically, the controller 204 switches the on-off valve 48 of the gas supply unit 40, the on-off valve 88 of the 1 st gas supply unit 80, the on-off valve 98 of the 2 nd gas supply unit 90, and the on-off valve 108 of the 3 rd gas supply unit 100 from the off state to the on state. As a result, as shown in fig. 12 (a), the supply of the low-oxygen gas Gd into the upper region V1 of the heat treatment unit U2 is started, and the oxygen concentration in the heat treatment unit U2 (upper region V1) starts to decrease.
Next, the control unit 204 controls the 1 st exhaust unit 110 and the 2 nd exhaust unit 150 so as to start the exhaust from various exhaust units other than the center exhaust unit 130 of the 1 st exhaust unit 110 (step S13). Specifically, the control unit 204 switches the on-off valve 126 of the outer periphery exhaust unit 120, the on-off valve 146 of the peripheral edge exhaust unit 140, and the on-off valve 156 of the 2 nd exhaust unit 150 from the off state to the on state. This allows the processing space S to be exhausted from the exhaust hole 122 of the outer peripheral exhaust portion 120, the gap g1, and the plurality of through holes 52 a.
Next, the control unit 204 controls the workpiece lifting unit 34 of the cooling processing unit 30, the workpiece lifting unit 60 of the heating processing unit 50, and the conveying unit 190 so that the workpiece W to be processed is conveyed from the cooling processing unit 30 to the heating processing unit 50 (step S14). Specifically, as shown in fig. 12 (b), the control unit 204 controls the workpiece lifting unit 60, the conveying unit 190, and the like so that the workpiece W is placed on the heating unit 52 (the support surface 54a of the hot plate 54) in a state where the lid 74 is open (a state where the processing space S is not formed).
Next, the control unit 204 controls the heat treatment unit 50 to perform heat treatment on the workpiece W to be treated (step S15). The heat treatment unit 50 is controlled in advance so that the temperature of the hot plate 54 becomes a temperature suitable for heat treatment. Fig. 11 shows an example of the heating process in step S15. In the heat treatment in step S15, for example, the controller 204 moves the lid 74 downward by the elevation drive unit 68 so that the treatment space S for the heat treatment is formed above the hot plate 54 (step S21). As shown in fig. 13 (a), the lid 74 is lowered to form the processing space S, and the heating of the workpiece W can be started.
The processing space S is narrower than the region outside the chamber 70 in the upper region V1, and the upper region V1 is supplied with the low-oxygen gas before the heat treatment is started. Therefore, immediately after the processing space S is formed, the processing space S is in a low oxygen state to such an extent that a coating film on the workpiece W can obtain a desired etching resistance. Immediately after the processing space S is formed, in order to bring the processing space S into a sufficiently low oxygen state, the gas in the processing space S may be replaced with the lid 74 temporarily closed before the workpiece W is sent to the heat treatment unit 50. After the lid 74 is lowered, the workpiece W is placed on the hot plate 54, and therefore, the processing space S is substantially exhausted by the outer periphery exhaust portion 120 and the peripheral edge exhaust portion 140.
Next, the control unit 204 waits until a predetermined 1 st heating time elapses from the end of the lowering of the lid 74 (step S22). The 1 st heating time is stored in the storage unit 202 in advance. The 1 st heating time is set to a level at which the coating on the workpiece W is cured to a predetermined level, and is set to, for example, about several tens of seconds. By performing step S22, the exhaust by the outer peripheral exhaust part 120 and the peripheral exhaust part 140, the supply of the 1 st gas from the 1 st gas supply part 80 to the processing space S, and the supply of the 2 nd gas from the 2 nd gas supply part 90 to the gap g2 continue for the 1 st heating time.
In the execution of step S22, the total of the amounts of exhaust gas from the outer peripheral exhaust part 120 and the peripheral exhaust part 140 (the amount of exhaust gas from the 1 st exhaust part 110) is greater than the 1 st gas supply amount from the 1 st gas supply part 80 and smaller than the total of the 2 nd gas supply amount from the 2 nd gas supply part 90 and the 1 st gas supply amount (hereinafter referred to as "1 st state"). Since the exhaust amount of the 1 st exhaust unit 110 in the 1 st state is larger than the supply amount of the 1 st gas, the process space S is in a negative pressure state when the process space S is assumed to be a closed space. In the chamber 70 of the present invention, the processing space S is connected to the outside of the processing space S through the gap g2, and thus, gas flows into the processing space S through the gap g2 to eliminate the negative pressure state in the processing space S. In this state, the exhaust amount of the 1 st exhaust unit 110 is smaller than the sum of the supply amounts of the 1 st gas and the 2 nd gas, and therefore, a part of the 2 nd gas supplied from the 2 nd gas supply unit 90 flows into the processing space S through the inner end g21 of the gap g2, and the remaining part flows out of the chamber 70 through the outer end g22 of the gap g 2. Therefore, as shown in fig. 13 (a), the gas is released from the gap g2 to the space outside the chamber 70, and the gas can be prevented from flowing from the outside of the chamber 70 into the processing space S. Further, during the execution of steps S21 and S22, the 3 rd gas is supplied from the 3 rd gas supply unit 100 to the periphery of the chamber 70.
Next, the control unit 204 controls the 1 st exhaust unit 110 so as to start exhausting the process space S from the center exhaust unit 130 while continuing to exhaust the gas by the outer circumferential exhaust unit 120 and the circumferential exhaust unit 140 (step S23). Specifically, the control unit 204 switches the on-off valve 136 of the center exhaust unit 130 from the off state to the on state. Since the workpiece W is placed on the hot plate 54, the processing space S is substantially exhausted by the outer peripheral exhaust portion 120, the center exhaust portion 130, and the peripheral exhaust portion 140.
Next, the control unit 204 waits until a predetermined heating time 2 elapses from the start of the exhaust from the center exhaust unit 130 (step S24). The 2 nd heating time is stored in the storage unit 202 in advance. The 2 nd heating time is set to a degree that the coating on the workpiece W is cured to a desired level in the heating treatment, and is set to, for example, about several tens of seconds in advance. The 2 nd heating time may be longer than the 1 st heating time, and in one example, is set to about 2 to 5 times the 1 st heating time. By performing steps S23, S24, the exhaust by the outer peripheral exhaust part 120, the central exhaust part 130, and the peripheral exhaust part 140, the supply of the 1 st gas from the 1 st gas supply part 80 to the processing space S, and the supply of the 2 nd gas from the 2 nd gas supply part 90 to the gap g2 continue for the 2 nd heating time.
In the execution of step S24, the total of the amounts of exhaust gas from the outer periphery exhaust portion 120, the center exhaust portion 130, and the periphery exhaust portion 140 (the amount of exhaust gas from the 1 st exhaust portion 110) is greater than the total of the amounts of supply of the 1 st gas and the 2 nd gas (hereinafter referred to as the "2 nd state"). In this case, substantially all of the 2 nd gas from the 2 nd gas supply unit 90 flows into the processing space S, and as shown in fig. 13 (b), the gas flows from the outside of the chamber 70 into the processing space S through the gap g 2.
Through the execution of the above-described steps S21 to S24, the controller 204 switches the exhaust state of the processing space S from the 1 st state, in which the processing space S is exhausted at an exhaust amount smaller than the sum of the supply amount of the 1 st gas and the supply amount of the 2 nd gas, to the 2 nd state, in which the processing space S is exhausted at an exhaust amount larger than the sum of the supply amount of the 1 st gas and the supply amount of the 2 nd gas. Further, the control unit 204 controls the 1 st exhaust unit 110 so that the processing space S is exhausted by at least the outer peripheral exhaust unit 120 in the 1 st state and is exhausted by at least the central exhaust unit 130 in the 2 nd state.
Next, as shown in fig. 14 (a), the control unit 204 controls the workpiece lifting unit 60 to raise the workpiece W to the intermediate position while maintaining the state in which the processing space S is formed (while maintaining the state in which the lid 74 is lowered) (step S25). After raising the workpiece W to the intermediate position, the control unit 204 waits until a predetermined recovery time elapses (step S26). The collection time is stored in the storage unit 202 in advance. The recovery time is set to a level at which the temperature of the workpiece W heated by the hot plate 54 is lowered to sufficiently reduce the generation of sublimates from the coating film on the workpiece W. In one example, the recovery time is set to about several seconds to several tens of seconds. The intermediate position is set to a level at which sublimates from the work W can be efficiently collected by the outer circumferential exhaust part 120 and the center exhaust part 130.
The intermediate position is set to, for example, a position (height position) between a delivery position where the conveying unit 190 delivers the workpiece W to and from the plurality of support pins 62 of the workpiece lifting unit 60 and the support surface 54a of the hot plate 54 in a state where the lid unit 74 is open. When the workpiece W is raised so as to be separated from the hot plate 54 in a state where the processing space S is formed, the plurality of through holes 52a into which the plurality of support pins 62 are inserted are connected to the processing space S. Since the exhaust through the plurality of through holes 52a is continued by the 2 nd exhaust unit 150, the processing space S is further exhausted through the plurality of through holes 52 a.
Next, the control unit 204 controls the 1 st exhaust unit 110 so that the exhaust of the center exhaust unit 130 is stopped (step S27). For example, the control unit 204 stops the discharge of the gas from the gas discharge hole 132 of the center gas discharge unit 130 by switching the on-off valve 136 of the center gas discharge unit 130 from the on state to the off state.
Next, as shown in fig. 14 (b), the controller 204 raises the lid 74 by the elevation driver 68 so that the space above the hot plate 54 is opened to the upper region V1 in a state where the workpiece W is held at the intermediate position by the plurality of support pins 62 (step S28). Next, as shown in fig. 15 a, the control unit 204 raises the workpiece W by the workpiece lifting unit 60 to a transfer position where the workpiece W is transferred to and from the conveying unit 190 (step S29). Through the above steps, the heating process of step S15 ends.
Returning to fig. 10, after step S15 is executed, the control unit 204 controls the workpiece lifting unit 34 of the cooling processing unit 30, the workpiece lifting unit 60 of the heating processing unit 50, and the conveying unit 190 so that the workpiece W to be processed is conveyed from the heating processing unit 50 to the cooling processing unit 30 (step S16). Specifically, as shown in fig. 15 (b), the control unit 204 controls the workpiece lifting unit 34, the conveying unit 190, and the like so that the workpiece W subjected to the heat treatment is placed on the cooling plate 32 (the support surface of the cooling plate 32).
Next, the control unit 204 waits until a predetermined cooling time elapses after the workpiece W is placed on the cooling plate 32 (step S17). The cooling time is stored in the storage unit 202 in advance, and is set to a degree that the workpiece W subjected to the heat treatment can be cooled to a desired temperature. By executing steps S16 and S17, the cooling process is performed on the workpiece W. Since the space around the cooling plate 32 is in a low-oxygen state by the supply of the 4 th gas from the gas supply unit 40, the cooling process can be performed at a low oxygen level.
Next, the controller 204 controls the plurality of gas suppliers to stop the supply of the low-oxygen gas in the heat treatment unit U2 (step S18). Specifically, the controller 204 switches the on-off valve 48 of the gas supply unit 40, the on-off valve 88 of the 1 st gas supply unit 80, the on-off valve 98 of the 2 nd gas supply unit 90, and the on-off valve 108 of the 3 rd gas supply unit 100 from the on state to the off state.
The controller 204 controls the conveyor a3 and the heat treatment unit U2 such that the workpiece W subjected to the heat treatment (the heating treatment and the cooling treatment) is sent out from the heat treatment unit U2 (step S19). For example, after the gate 26 is moved by the gate driving unit 28 to open the inlet 22a, the controller 204 controls the transport device A3 and the workpiece lifting unit 34 so that the workpiece W is delivered from the plurality of support pins 36 of the cooling processing unit 30 to the transport device A3.
Through the above steps, a series of heat treatments for one workpiece W is ended. The controller 204 may sequentially execute the same processing as in steps S11 to S19 for each of the subsequent plurality of workpieces W. The processing of step S13 may be omitted for the workpieces W subsequent to the 2 nd block.
[ Effect of the embodiment ]
The heat treatment unit U2 of the above embodiment includes: a heating unit 52 for supporting the workpiece W on which the coating film is formed and heating the workpiece W; a chamber 70 having a peripheral wall portion 72 and a lid portion 74, the peripheral wall portion 72 surrounding the periphery of the heating portion 52, the lid portion 74 covering the heating portion 52 with a gap g2 formed between the lid portion 74 and the peripheral wall portion 72 to form a processing space S above the heating portion 52; a housing 22 for housing the heating portion 52 and the chamber 70; a1 st gas supply unit 80 for supplying a1 st gas having an oxygen concentration lower than that of the atmosphere into the processing space; an exhaust unit (1 st exhaust unit 110) for exhausting the processing space by an amount of exhaust gas larger than the amount of supply of the 1 st gas; a 2 nd gas supply unit 90 for supplying a 2 nd gas having an oxygen concentration lower than the atmospheric air to a gap g2 between the peripheral wall portion 72 and the lid portion 74; and a3 rd gas supply unit 100 for supplying a3 rd gas having a lower oxygen concentration than the atmosphere to the outside of the chamber 70 in the housing 22.
In the heat treatment unit U2, the exhaust amount of the 1 st exhaust unit 110 is larger than the supply amount of the 1 st gas, and therefore, the processing space S can be evacuated to a negative pressure. This enables the sublimate generated from the coating film as the workpiece W is heated to be efficiently recovered. On the other hand, since the gap g2 is formed between the peripheral wall portion 72 and the lid portion 74, it is possible to introduce gas into the processing space S from the outside of the processing space S so as to eliminate the negative pressure state of the processing space S. Specifically, the 2 nd gas supplied from the 2 nd gas supply portion 90 to the gap g2 between the peripheral wall portion 72 and the lid portion 74 can be introduced into the processing space S. In addition, even in the case where a gas having a larger supply amount than the 2 nd gas is introduced into the processing space S, the 2 nd gas from the 2 nd gas supply part 90 and the gas outside the chamber 70 formed in the low oxygen state by the 3 rd gas supply part 100 are introduced into the processing space S. Therefore, even if gas flows into the processing space S from the outside, the processing space S can be maintained in a low oxygen state. Therefore, both high-efficiency recovery of the sublimate and heat treatment in a low-oxygen state can be achieved at the same time.
As a method of heat-treating the coating film of the workpiece W under low oxygen, it is conceivable to set the supply amount of the low-oxygen gas supplied to the processing space to be equal to or more than the discharge amount of the gas discharged from the processing space so as not to introduce the gas outside the chamber into the processing space. However, in this method, in a state where the processing space is formed, the sublimate may leak out of the chamber from a gap between the peripheral portion and the lid portion. In addition, when the sublimate is insufficiently collected in the processing space and the processing space is opened, the sublimate may leak out of the chamber. In the above configuration of the present invention, the exhaust amount of the 1 st exhaust unit 110 is larger than the supply amount of the 1 st gas, and therefore, the sublimate can be efficiently recovered. Further, by supplying the 2 nd gas to the gap g2 between the peripheral wall 72 and the lid 74 and supplying the 3 rd gas to the outside of the processing space S, the processing space S can be kept in a low oxygen state, and the sublimate can be prevented from leaking out of the chamber 70 through the gap g 2.
In the above embodiment, the 1 st exhaust unit 110 includes: an outer peripheral exhaust section 120 for exhausting the processing space S from an outer peripheral region outside the peripheral edge Wc of the workpiece W supported by the heating section 52; and a center exhaust section 130 for exhausting the processing space S from a center region inside the peripheral edge Wc of the workpiece W supported by the heating section 52. In the former stage of the process in which the coating film formed on the front surface Wa of the workpiece W is cured by heating, the influence of the exhaust gas from the processing space S on the film thickness is large, and in the latter stage of the curing process of the coating film, the influence of the exhaust gas from the processing space S on the film thickness is small. In the above configuration of the present invention, the operation of the 1 st exhaust unit 110 is switched, so that the exhaust from the outer peripheral region can be performed before the curing process, and the influence on the film thickness due to the exhaust from the processing space S can be suppressed. Further, in the latter stage of the curing process in which the degree of influence of the exhaust gas in the processing space S on the film thickness is small, the exhaust gas can be performed from the central region, and the sublimate can be efficiently collected. Therefore, the sublimate can be efficiently collected, and the in-plane uniformity of the film thickness can be improved.
In the above embodiment, the 1 st gas supply unit 80 has the head 82, and the head 82 is provided with the plurality of discharge holes 82a distributed on the surface of the head 82 facing the workpiece W supported by the heating unit 52, and the 1 st gas can be supplied from the plurality of discharge holes 82a to the workpiece W on the heating unit 52. In this case, since the 1 st gas can be uniformly supplied from the 1 st gas supply unit 80 to the front surface Wa of the workpiece W, the influence of the 1 st gas on the film thickness can be made uniform. Therefore, the in-plane uniformity of the film thickness can be improved.
In the above embodiment, the peripheral wall portion 72 is disposed so that the gap g1 is formed between the peripheral wall portion 72 and the heating portion 52. The 1 st exhaust part 110 has a peripheral edge exhaust part 140, and the peripheral edge exhaust part 140 is used to exhaust the processing space S from the gap g1 between the peripheral wall part 72 and the heating part 52. In this case, an increase in the oxygen concentration in the processing space S due to the gas present in the gap g1 between the heating portion 52 and the peripheral wall portion 72 can be suppressed, and the heat treatment can be performed more reliably in a low oxygen state.
In the above-described embodiment, at least a part of the exhaust path 142 included in the peripheral edge exhaust portion 140 and at least a part of the gas supply path (supply path 92b) included in the 2 nd gas supply portion 90 are disposed in a state of being close to each other. In this case, the temperature of the 2 nd gas supplied through the gas supply path (supply path 92b) of the 2 nd gas supply unit 90 increases, and it is possible to suppress a decrease in the temperature of the processing space S due to the 2 nd gas from the 2 nd gas supply unit 90 being sucked into the processing space S.
The heat treatment unit U2 of the above embodiment further includes: a workpiece lifting unit 60 having a plurality of support pins 62 inserted into the plurality of through holes 52a penetrating the heating unit 52 in the vertical direction, and a lifting drive unit 64 for lifting and lowering the plurality of support pins 62; and a pin exhaust unit (2 nd exhaust unit 150) for exhausting the processing space S from the plurality of through holes 52 a. In this case, in a state where the workpiece W is separated from the heating portion 52, an increase in the oxygen concentration in the processing space S due to the gas from the through hole 52a into which the support pin 62 is inserted can be suppressed, and the heat treatment can be performed in a low oxygen state more reliably.
In the above embodiment, the pin exhaust portion (2 nd exhaust portion 150) includes: a plurality of independent exhaust paths 152 connected to the plurality of through holes 52a, respectively, below the heating portion 52; and a common exhaust path 154 connected to the plurality of independent exhaust paths 152. In this case, the pin exhaust portion can be made more space-saving than in the case where an exhaust space connected to the plurality of through holes 52a is provided below the heating portion 52 and exhaust is performed from the plurality of through holes 52 a.
In the above-described embodiment, one independent exhaust path 152 of the plurality of independent exhaust paths 152 includes: a1 st region 152a extending downward from a corresponding one of the through holes 52 a; and a 2 nd region 152b extending in a direction intersecting the extending direction of the 1 st region 152 a. The 2 nd exhaust part 150 includes: a1 st exhaust path forming portion 162 for forming the 1 st region 152 a; and a 2 nd exhaust path forming part 166 for forming the 2 nd region 152 b. One support pin 62 of the plurality of support pins 62 is disposed in the 1 st region 152a along the extending direction of the 1 st region 152a in the one independent exhaust path 152, and is inserted into a connection hole 168a provided in the bottom 168 of the 2 nd exhaust path forming portion 166. The 1 st exhaust path forming portion 162 includes a bellows 164 that is expandable and contractible along the extending direction of the 1 st region 152 a. The 2 nd exhaust unit 150 includes a sealing member 170 disposed to close the connection hole 168a and movable relative to the connection hole 168 a. In this case, the contraction or expansion of the exhaust passage forming portion due to the temperature rise of the heating portion 52 is absorbed by the bellows, whereby the 1 st region can be more reliably sealed. Further, by closing the connection hole 168a provided at the bottom with the sealing member 170 movable with respect to the connection hole 168a, the support pin 62 can be moved in the connection hole 168a, and the inflow of the gas other than the low oxygen into the processing space S through the connection hole 168a can be suppressed.
In the above embodiment, the coating is a coating film formed by applying the treatment liquid to the front side Wa of the workpiece W. In this case, the sublimate generated by the temperature increase of the coating film can be efficiently recovered, and the characteristics (for example, etching resistance) of the coating film can be improved by the heat treatment under low oxygen.
The coating and developing apparatus 2 of the above embodiment includes: a heat treatment unit U2; and a control device 200 for controlling the heat treatment unit U2. The control device 200 can control the heat processing unit U2 to switch from the 1 st state, in which the processing space S is exhausted by an amount of exhaust gas smaller than the sum of the supply amount of the 1 st gas and the supply amount of the 2 nd gas, to the 2 nd state, in which the processing space S is exhausted by an amount of exhaust gas larger than the sum of the supply amount of the 1 st gas and the supply amount of the 2 nd gas.
It takes time for the region outside the processing space S and the gap g2 in the casing 22 to reach a state where the oxygen concentration is low to the same extent as in the processing space S. However, if the heat treatment is started after waiting until the region outside the processing space S and the gap g2 reaches a sufficiently low oxygen concentration, the efficiency (productivity) of the substrate treatment is lowered. In contrast, in the above configuration of the present invention, in the 1 st state, the process space S can be exhausted at an exhaust rate such that a gas other than the 2 nd gas from the 2 nd gas supply unit 90 does not enter the process space S. Further, in the 2 nd state after switching from the 1 st state, the gas having reached the sufficiently low oxygen state can be introduced into the processing space S from the gap g2 and the region other than the processing space S. Therefore, the efficiency of substrate processing including heating processing under low oxygen can be improved.
In the above embodiment, the control device 200 controls the 1 st exhaust unit 110 so that the processing space S is exhausted by at least the outer peripheral exhaust unit 120 in the 1 st state and the processing space S is exhausted by at least the central exhaust unit 130 in the 2 nd state. In the former stage of the process in which the coating on the front surface Wa of the workpiece W is cured by heating, the influence of the exhaust gas from the processing space S on the film thickness is large, and in the latter stage of the curing process, the influence of the exhaust gas on the film thickness is small. In the above configuration of the present invention, the process space S is exhausted from the outer peripheral region in the 1 st state before the curing process, whereby the influence of the exhaust gas on the film thickness can be suppressed. On the other hand, in the second stage of the curing process in which the degree of influence of the exhaust gas on the film thickness is small, the process space S can be exhausted from the central region in the 2 nd state, and the sublimate can be efficiently collected. Therefore, the sublimate can be efficiently collected, and the in-plane uniformity of the film thickness can be improved.
[ modified examples ]
The disclosure in the present specification is to be considered in all respects as illustrative and not restrictive. Various omissions, substitutions, changes, and the like may be made to the above-described examples without departing from the scope of the claims and their spirit.
The structure of the 1 st exhaust part 110 is not limited to the above example. The 1 st exhaust unit 110 may have any configuration as long as it can exhaust the processing space S with the workpiece W placed on the hot plate 54. For example, the 1 st exhaust part 110 may not have at least 1 of the outer circumferential exhaust part 120, the center exhaust part 130, and the peripheral exhaust part 140. The heat treatment unit 50 may not include the 2 nd exhaust unit 150.
In the above example, in the 2 nd state after switching from the 1 st state, the process space S is exhausted from the outer peripheral exhaust portion 120, the center exhaust portion 130, and the peripheral exhaust portion 140, but the exhaust method in the 2 nd state is not limited to this. In the 2 nd state, the exhaust from the center exhaust portion 130 may be performed without performing the exhaust from at least one of the outer periphery exhaust portion 120 and the peripheral edge exhaust portion 140.
The structure of the 2 nd gas supply unit 90 is not limited to the above example. The 2 nd gas supply unit 90 may supply the 2 nd gas from the gas discharge unit provided inside the side wall 78 of the lid 74 to the gap g2 instead of or in addition to the gas discharge unit provided inside the peripheral wall 72. In the above example, the gap g2 is formed between the upper end of the peripheral wall portion 72 and the lower end of the side wall 78, but the side of the peripheral wall portion 72 may be covered with the side wall 78, and the gap g2 may be formed between the inner peripheral surface of the side wall 78 and the outer peripheral surface of the peripheral wall portion 72.

Claims (13)

1. A thermal processing unit, comprising:
a heating unit for supporting a substrate on which a coating film is formed and heating the substrate;
a chamber having a peripheral wall portion surrounding a periphery of the heating portion and a lid portion covering the heating portion with a gap formed therebetween to form a processing space above the heating portion;
a housing for housing the heating section and the chamber;
a1 st gas supply unit configured to supply a1 st gas having an oxygen concentration lower than that of the atmosphere to the processing space;
an exhaust unit configured to exhaust the process space by an amount of exhaust gas larger than a supply amount of the 1 st gas;
a 2 nd gas supply unit for supplying a 2 nd gas having an oxygen concentration lower than that of the atmosphere to a gap between the peripheral wall portion and the lid portion; and
a3 rd gas supply unit for supplying a3 rd gas having an oxygen concentration lower than that of the atmosphere to the outside of the chamber in the housing.
2. The thermal processing unit of claim 1, wherein:
the exhaust unit includes:
a peripheral exhaust section for exhausting gas from a peripheral region outside a peripheral edge of the substrate supported by the heating section to the processing space; and
a central exhaust section for exhausting gas from a central region inside a peripheral edge of the substrate supported by the heating section to the processing space.
3. The heat treatment unit of claim 1 or 2, wherein:
the 1 st gas supply unit includes a head portion having a plurality of discharge holes distributed on a surface of the head portion facing the substrate supported by the heating unit, and the 1 st gas can be supplied to the substrate on the heating unit through the plurality of discharge holes.
4. The heat treatment unit according to any one of claims 1 to 3, wherein:
the peripheral wall portion is disposed so as to form a gap between the peripheral wall portion and the heating portion,
the exhaust section has a peripheral exhaust section for exhausting the processing space from a gap between the peripheral wall section and the heating section.
5. The thermal processing unit of claim 4, wherein:
at least a part of the exhaust path included in the peripheral exhaust portion and at least a part of the gas supply path included in the 2 nd gas supply portion are disposed in a state of being close to each other.
6. The heat treatment unit of any of claims 1-5, further comprising:
a substrate lifting unit having a plurality of support pins inserted into the plurality of through holes penetrating the heating unit in the vertical direction, and a lifting drive unit for lifting the plurality of support pins; and
and a pin exhaust unit configured to exhaust the processing space from the plurality of through holes.
7. The thermal processing unit of claim 6, wherein:
the pin exhaust portion includes: a plurality of independent exhaust paths connected to the plurality of through holes, respectively, below the heating portion; and a common exhaust path connected to the plurality of independent exhaust paths.
8. The thermal processing unit of claim 7, wherein:
one of the plurality of independent exhaust paths includes: a1 st region extending downward from a corresponding one of the through holes; and a 2 nd region extending in a direction intersecting with an extending direction of the 1 st region,
the pin exhaust portion includes: a1 st exhaust path forming portion for forming the 1 st region; and a 2 nd exhaust path forming portion for forming the 2 nd region,
one of the plurality of support pins is arranged in the 1 st region along the extending direction of the 1 st region in the one independent exhaust path and is inserted into a connection hole provided at the bottom of the 2 nd exhaust path forming portion,
the 1 st exhaust path forming part includes a bellows capable of expanding and contracting in an extending direction of the 1 st region,
the pin exhaust portion includes a seal member disposed so as to close the connection hole and movable relative to the connection hole.
9. The heat treatment unit of any one of claims 1 to 8, wherein:
the coating film is a coating film formed by coating a treatment liquid on the surface of the substrate.
10. A substrate processing apparatus, comprising:
the thermal treatment unit of claim 1; and
a control unit for controlling the heat treatment unit,
the control unit may control the heat treatment unit such that the heat treatment unit switches from a1 st state in which the process space is exhausted at an exhaust gas amount smaller than a sum of the supply amount of the 1 st gas and the supply amount of the 2 nd gas to a 2 nd state in which the process space is exhausted at an exhaust gas amount larger than the sum of the supply amount of the 1 st gas and the supply amount of the 2 nd gas.
11. The substrate processing apparatus according to claim 10, wherein:
the exhaust unit includes: a peripheral exhaust section for exhausting gas from a peripheral region outside a peripheral edge of the substrate supported by the heating section to the processing space; and a central exhaust section for exhausting gas from a central region inside a peripheral edge of the substrate supported by the heating section to the processing space,
the control unit may control the exhaust portion such that the process space is exhausted by at least the outer peripheral exhaust portion in the 1 st state and the process space is exhausted by at least the central exhaust portion in the 2 nd state.
12. A method of heat treatment, comprising:
a heating step of heating a substrate on which a coating film is formed by using a heating unit in a processing space formed on the heating unit by a chamber having a peripheral wall portion surrounding the heating unit and a lid portion disposed so as to form a gap between the lid portion and the peripheral wall portion;
a1 st gas supply step of supplying a1 st gas having an oxygen concentration lower than that of the atmosphere into the processing space;
an exhaust step of exhausting the process space by an exhaust amount larger than a supply amount of the 1 st gas;
a 2 nd gas supply step of supplying a 2 nd gas having an oxygen concentration lower than atmospheric air to a gap between the peripheral wall portion and the lid portion; and
a3 rd gas supply step of supplying a3 rd gas having an oxygen concentration lower than that of the atmosphere to the outside of the chamber in a housing accommodating the heating portion and the chamber.
13. A computer-readable storage medium, characterized in that:
a program for causing an apparatus to execute the heat treatment method according to claim 12 is stored.
CN202110677895.2A 2020-06-26 2021-06-18 Heat treatment unit, substrate treatment apparatus, heat treatment method, and storage medium Pending CN113851389A (en)

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