CN113805288A - Light receiving TO with light amplification function - Google Patents

Light receiving TO with light amplification function Download PDF

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Publication number
CN113805288A
CN113805288A CN202111060040.1A CN202111060040A CN113805288A CN 113805288 A CN113805288 A CN 113805288A CN 202111060040 A CN202111060040 A CN 202111060040A CN 113805288 A CN113805288 A CN 113805288A
Authority
CN
China
Prior art keywords
light receiving
chip
light
soa
photoelectric detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111060040.1A
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Chinese (zh)
Inventor
毛晶磊
许远忠
张强
张勇
汪保全
何婵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chengdu Eugenlight Technologies Co ltd
Original Assignee
Chengdu Eugenlight Technologies Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chengdu Eugenlight Technologies Co ltd filed Critical Chengdu Eugenlight Technologies Co ltd
Priority to CN202111060040.1A priority Critical patent/CN113805288A/en
Publication of CN113805288A publication Critical patent/CN113805288A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4295Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60Receivers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention discloses a light receiving TO with a light amplification function, which is applied TO the field of optical devices and aims at solving the problem that the existing light receiving TO can not meet the requirements of high-speed and long-distance transmission; the invention improves the existing optical receiving TO, and the SOA and the PD are integrated and packaged in one TO, so that the size of a packaged device can be greatly reduced, and the stability of the device is also improved; compared with the existing ordinary optical receiving TO, the optical receiving TO can support higher-speed longer-distance transmission.

Description

Light receiving TO with light amplification function
Technical Field
The invention belongs TO the field of optical devices, and particularly relates TO an optical receiving TO technology.
Background
The existing optical receiving TO only has a PIN photoelectric detector (PIN PD) or an avalanche type photoelectric detector (APD) inside, the PIN photoelectric detector can meet the transmission of 25G signals at a distance of about 10km, the avalanche effect can amplify photo-generated current by about 10 times and can meet the transmission of 25G signals at a distance of 40km, but the existing technology still has limitations in terms of the requirements of high-speed and long-distance transmission.
Disclosure of Invention
In order TO solve the technical problem, the invention provides the optical receiving TO with the optical amplification function, and the SOA and the PD are integrated and packaged in the same TO, so that the size of a packaged device can be greatly reduced, and the stability of the device is improved.
The technical scheme adopted by the invention is as follows: a light receiving TO with an optical amplification function, comprising: the device comprises a semiconductor optical amplifier chip 3, an SOA chip substrate 5, a heat sink 6, a focusing lens 7, a photoelectric detector 8, a transimpedance amplifier 9 and a TO base 11; the SOA chip substrate 5 is used for bearing the semiconductor optical amplifier chip 3; the heat sink 6 is used for supporting the SOA chip substrate 5, the focusing lens 7, the photoelectric detector 8 and the transimpedance amplifier 9;
the semiconductor optical amplifier chip 3, the focusing lens 7, the photoelectric detector 8 and the transimpedance amplifier 9 are located on a main light path, an optical signal is coupled to enter the semiconductor optical amplifier chip 3 for amplification, the amplified optical signal is coupled to the photoelectric detector 8 through the focusing lens 7, the photoelectric detector 8 converts the received optical signal into an electric signal and inputs the electric signal to the transimpedance amplifier 9 for processing, and the transimpedance amplifier 9 outputs a voltage signal.
Further comprising: the chip comprises a thermistor 4 and a semiconductor refrigerator 10, wherein the thermistor 4 is arranged on an SOA chip substrate 5, and the semiconductor refrigerator 10 is arranged below a transimpedance amplifier 9.
A metal cap 1 is further included for sealing the elements inside the entire light receiving TO.
A sealing glass plate or lens 2 is also included as an optical signal transmission window and a metal cap is sealed.
The invention has the beneficial effects that: according TO the light receiving TO, the SOA and the PD are integrated and packaged in one TO, so that the size of a packaged device can be greatly reduced, and the stability of the device is improved; compared with the existing ordinary optical receiving TO, the optical receiving TO can support higher-speed longer-distance transmission.
Drawings
Fig. 1 is a front view of a light receiving TO of the present invention;
FIG. 2 is a top view of a light receiving TO of the present invention;
wherein, 1 is a metal pipe cap; 2 is a sealing glass sheet or a lens; 3 is semiconductor optical amplifier Chip (SOA Chip); 4 is a thermistor; 5 is an SOA chip substrate; 6 is a heat sink; 7 is a focusing lens; 8 is a Photodetector (PD); 9 is a transimpedance amplifier (TIA); 10 is a semiconductor cooler (TEC); and 11 is a TO base.
Detailed Description
In order to facilitate the understanding of the technical contents of the present invention by those skilled in the art, the present invention will be further explained with reference to the accompanying drawings.
As shown in fig. 1, the light receiving TO of the present invention includes: the device comprises a metal tube cap 1, a sealing glass sheet or lens 2, a semiconductor optical amplifier chip 3, a thermistor 4, an SOA chip substrate 5, a heat sink 6, a focusing lens 7, a photoelectric detector 8, a transimpedance amplifier 9, a semiconductor refrigerator 10 and a TO base 11;
and the metal pipe cap 1 is used for sealing elements inside the whole light receiving TO and preventing water vapor dust and other pollutants from entering.
A glass plate or lens 2 is sealed as an optical signal transmission window and the TO cap is sealed.
And a semiconductor optical amplifier Chip (SOA Chip)3 for amplifying the optical signal.
And the thermistor 4 is used for monitoring the temperature and providing a reference temperature for the TEC, is attached to the SOA chip substrate and is close to the SOA chip.
And the SOA chip substrate 5 is used for bearing the SOA chip and the thermistor.
And the heat sink 6 is used for supporting the SOA chip, the SOA chip substrate, the thermistor and the focusing lens and conducting the heat generated by the heat sink to the TEC.
And the focusing lens 7 is used for focusing and coupling the optical signal amplified by the SOA onto the PD chip.
And a Photodetector (PD)8 that converts the optical signal into a current signal.
A transimpedance amplifier (TIA)9 that converts the current signal of the photodetector into a voltage signal and outputs the voltage signal.
A semiconductor cooler (TEC)10, which needs to be temperature controlled by a TEC because a semiconductor optical amplifier needs a stable working temperature, specifically: the micro control unit of the external TO driving chip can read the temperature of the thermistor, compare the temperature with the set temperature, and control the current flowing TO the TEC so as TO control heating or cooling, so that the temperature of the thermistor is consistent with the set temperature.
The TO base 11, provides a support platform for internal components and provides an electrical interface TO external connections. The electrical interfaces are identified in fig. 2, the TEC control interfaces (TEC + and TEC-), the thermistor interfaces (Rth + and GND), the SOA control interfaces (SOA + and GND), the TIA power supply interfaces (VCC and GND), the differential signal output interfaces (OUTP and OUTN), and the monitor interface (RSSI).
The working principle of the optical receiving TO of the invention is as follows: optical signals enter the SOA chip through the external lens or the TO tube cap with the sealing glass sheet or the lens 2 in a coupling mode, the SOA chip is set at proper current and temperature, the SOA can amplify the optical signals, the amplified optical signals are coupled into the PD chip 8 through the focusing lens 7, the PD chip 8 converts the received optical signals into electric signals, the electric signals are input into the TIA 9 TO be processed, and the electric signals are output.
The specific packaging process of the optical receiving TO of the invention is as follows:
1, mounting the TIA on a cold surface of the TEC, and fixing by using silver adhesive;
2, mounting the PD chip on the TIA surface, and fixing by using silver adhesive;
3, mounting the TEC with the TIA and the PD on the TO base, and fixing the TEC with silver adhesive;
4, connecting a bonding pad required TO be used on the TIA and the PD TO a binding post corresponding TO the TO base in a routing mode;
5, mounting the SOA chip and the thermistor on the SOA chip substrate, and fixing by using silver adhesive;
6, mounting the substrate with the mounted SOA chip and the thermistor on a heat sink, and fixing the substrate with silver adhesive;
7, fixing the heat sink on the cold surface of the TEC;
8, connecting the SOA chip and the thermistor TO a binding post corresponding TO the TO base in a routing mode;
9, fixing the TO base on the jig, and connecting the TO base with an external driving circuit board through pins of the TO base;
setting 100mA current for the SOA + pin on the driving board to enable the SOA to work, wherein the SOA can emit a certain amount of spontaneous emission light at the moment, the VCC pin is set to be 3.3V voltage, and the RSSI pin is connected to a high-precision ammeter;
moving a focusing lens, coupling the spontaneous amplitude emission light of the SOA chip onto the PD chip as much as possible, monitoring the reading of an ammeter, and fixing the focusing lens on a heat sink through UV glue when the reading is maximum;
and 12, resistance welding the metal pipe cap TO the TO base under the vacuum or the environment filled with the protective gas.
The SOA and the PD are integrated and packaged in one TO, so that the size of a packaged device can be greatly reduced, and the stability of the device is improved.
The invention uses PIN PD as the photoelectric detector, because the optical signal has very big noise after SOA amplification, after APD amplifies again, the signal-to-noise ratio drops seriously, the performance is not as excellent as using PIN PD.
The TEC is used for stabilizing the working temperature of the SOA, and the device can be used at different environmental temperatures.
The optical signal amplified by the SOA is coupled into the PD by using the lens, and the optical signal can be coupled into the PD as much as possible by proper lens selection.
The TO tube cap can be a flat window glass type, and can also be an aspheric surface or other collimating lens tube caps, and the flat window glass tube caps are matched with external collimating lenses for use.
In the common optical receiving TO, only a PIN photoelectric detector (PIN PD) or an avalanche type photoelectric detector (APD) is arranged inside, the PIN photoelectric detector can meet the transmission of 25G signals in a distance of about 10km, the avalanche effect can amplify photo-generated current by about 10 times and can meet the transmission of 25G signals in a distance of 40km, an SOA chip can provide optical signal gain of about 100 times and can increase the transmission distance TO 80 km.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.

Claims (4)

1. A light receiving TO with a light amplification function, comprising: the device comprises a semiconductor optical amplifier chip (3), an SOA chip substrate (5), a heat sink (6), a focusing lens (7), a photoelectric detector (8), a transimpedance amplifier (9) and a TO base (11); the SOA chip substrate (5) is used for bearing a semiconductor optical amplifier chip (3); the heat sink (6) is used for supporting the SOA chip substrate (5), the focusing lens (7), the photoelectric detector (8) and the transimpedance amplifier (9);
the semiconductor optical amplifier chip (3), the focusing lens (7), the photoelectric detector (8) and the transimpedance amplifier (9) are located on a main light path, optical signals are coupled to enter the semiconductor optical amplifier chip (3) for amplification, the amplified optical signals are coupled to the photoelectric detector (8) through the focusing lens (7), the photoelectric detector (8) converts the received optical signals into electric signals, the electric signals are input to the transimpedance amplifier (9) for processing, and the transimpedance amplifier (9) outputs voltage signals.
2. A light receiving TO with light amplification function according TO claim 1, characterized by further comprising: the semiconductor chip comprises a thermistor (4) and a semiconductor refrigerator (10), wherein the thermistor (4) is arranged on an SOA chip substrate (5), and the semiconductor refrigerator (10) is arranged below a transimpedance amplifier (9).
3. A light receiving TO with light amplification function according TO claim 1 or 2, characterized in that said light receiving TO further comprises a metal cap (1) for sealing the elements inside the whole light receiving TO.
4. A light receiving TO with light amplification function according TO claim 3, characterized in that said light receiving TO further comprises a sealing glass sheet or lens (2) as a light signal transmission window and sealing the metal cap (1).
CN202111060040.1A 2021-09-10 2021-09-10 Light receiving TO with light amplification function Pending CN113805288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111060040.1A CN113805288A (en) 2021-09-10 2021-09-10 Light receiving TO with light amplification function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111060040.1A CN113805288A (en) 2021-09-10 2021-09-10 Light receiving TO with light amplification function

Publications (1)

Publication Number Publication Date
CN113805288A true CN113805288A (en) 2021-12-17

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114966360A (en) * 2022-07-27 2022-08-30 成都光创联科技有限公司 System and method for testing avalanche voltage of optical device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110880954A (en) * 2019-11-29 2020-03-13 深圳市光为光通信科技有限公司 Optical detector receiving assembly
CN112198600A (en) * 2020-12-07 2021-01-08 武汉乾希科技有限公司 Multichannel optical receiving component for optical communication and optical path coupling method thereof
CN112838899A (en) * 2021-01-12 2021-05-25 索尔思光电(成都)有限公司 Light receiving module and optical module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110880954A (en) * 2019-11-29 2020-03-13 深圳市光为光通信科技有限公司 Optical detector receiving assembly
CN112198600A (en) * 2020-12-07 2021-01-08 武汉乾希科技有限公司 Multichannel optical receiving component for optical communication and optical path coupling method thereof
CN112838899A (en) * 2021-01-12 2021-05-25 索尔思光电(成都)有限公司 Light receiving module and optical module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114966360A (en) * 2022-07-27 2022-08-30 成都光创联科技有限公司 System and method for testing avalanche voltage of optical device
CN114966360B (en) * 2022-07-27 2022-10-25 成都光创联科技有限公司 System and method for testing avalanche voltage of optical device

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Application publication date: 20211217

RJ01 Rejection of invention patent application after publication