CN113787636A - Manual bar adhering method for 12-inch semiconductor wafer - Google Patents
Manual bar adhering method for 12-inch semiconductor wafer Download PDFInfo
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- CN113787636A CN113787636A CN202110774726.0A CN202110774726A CN113787636A CN 113787636 A CN113787636 A CN 113787636A CN 202110774726 A CN202110774726 A CN 202110774726A CN 113787636 A CN113787636 A CN 113787636A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0088—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being angularly adjustable
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/22—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring angles or tapers; for testing the alignment of axes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
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Abstract
The invention provides a manual rod sticking method for a 12-inch semiconductor wafer, which comprises the following preparation steps of: s1, marking the end face circle center on the seed crystal end face of the crystal bar and recording as a point A; s2, horizontally placing the crystal bar on an X-ray machine, enabling the end face of the seed crystal end to face outwards, opening an X-ray emission source, and measuring angles alpha and beta of the crystal bar to be deflected by combining an X-ray detector; s3, bonding the resin plate and the crystal bar, and finely adjusting the beta angle before the glue is cured to enable the beta angle to be equal to the measured value; and S4, adjusting the alpha angle orientation device to adjust the orientation plate of the alpha angle orientation device to the deflection position of the alpha angle, and then bonding the crystal bar on the workpiece steel plate. The invention can optimize the measurement accuracy of the crystal orientation from +/-30 'to +/-15' and meet the requirement of the 12-inch semiconductor wafer on the crystal orientation.
Description
Technical Field
The invention relates to the field of monocrystalline silicon piece production, in particular to a manual rod sticking method for a 12-inch semiconductor wafer.
Background
The sticking of the rod is the first step of processing the crystal rod into the silicon chip, the crystal rod, the crystal plate 4 and the iron plate are connected by directional rod sticking equipment, and the crystal rod, the crystal plate and the iron plate are solidified at room temperature after the crystal rod, the iron plate and the iron plate are qualified through recheck. The purpose of sticking the bar is to fix the crystal bar in such a way that the crystal bar is convenient to be installed on a wire cutting machine to directly carry out automatic cutting operation, all silicon wafers after cutting have the same crystal orientation and stable quality and are firmly left on a workpiece plate. The mortar is washed by clean water, and the adhesive is easily taken down after being soaked in hot water, and the silicon wafer can not be damaged. Before a monocrystalline silicon rod is cut into monocrystalline silicon wafers, a crystal bar needs to be directionally bonded on bar bonding equipment according to two calculated deflection angles, wherein one deflection angle is an alpha horizontal deflection angle and determines a vertical crystal orientation of the crystal bar, the other deflection angle is a beta vertical deflection angle and determines a horizontal crystal orientation of the crystal bar, 12-inch semiconductor wafers have strict requirements on the crystal orientation of the sliced crystal, full-automatic directional bonding equipment is generally adopted in the industry to ensure the precision, the price of the full-automatic directional bonding equipment is high and is nearly 300 thousands, and the traditional manual bonding method cannot ensure that the crystal orientation of the 12-inch crystal bar meets the requirements, so that the crystal orientation after slicing exceeds the standard, the silicon wafers are scrapped, and irrecoverable loss is caused.
Disclosure of Invention
In order to solve the problems, the invention provides a manual bar bonding method for 12-inch semiconductor wafers, which makes up the blank of manually bonding 12-inch semiconductor wafers and saves a large amount of cost for purchasing full-automatic directional bonding equipment.
The technical scheme adopted by the invention for solving the technical problems is as follows: a manual rod sticking method for a 12-inch semiconductor wafer comprises the following preparation steps:
s1, drawing a straight line a penetrating through the Notch and the center of the end face on the end face of the seed crystal end of the crystal bar, and then drawing a straight line b penetrating through the center of the end face and perpendicular to the straight line a, wherein the intersection point of the straight line a and the straight line b is the center of the end face and is marked as a point A; s2, horizontally placing the crystal bar on an X-ray machine, enabling the end face of the seed crystal end to face outwards, opening an X-ray emission source, and measuring angles alpha and beta of the crystal bar to be deflected by combining an X-ray detector;
s3, arranging a resin plate used for being bonded with the crystal bar in the support plate, wherein the top surface of the resin plate is an inwards concave arc-shaped surface, gluing the top surface of the resin plate, placing the crystal bar on the resin plate along the axis direction, supporting the crystal bar by the joint action of the resin plate and the support plate, and finely adjusting a beta angle before the glue is cured to enable the beta angle to be equal to the previous measured value;
and S4, taking out the crystal bar bonded with the resin plate in the step S3, adjusting the alpha angle orientation device to adjust the orientation plate of the alpha angle orientation device to the deflection position of the alpha angle, and bonding the crystal bar on the workpiece steel plate.
Further, the step of measuring the deflection angles alpha and beta required by the crystal bar bonding in S2 comprises the following steps:
s21, the Notch angle is vertically upward, the crystal bar is rotated and moved around the point A at the moment, and the moving angle W1 when the X-ray detector shows the maximum reflection intensity is found out;
s22, rotating the crystal bar clockwise 90 degrees along the central axis, repeating the operation S21, and measuring the moving angle W2 when the crystal bar is rotated to enable the X-ray detector to display the maximum reflection intensity;
s23, rotating the crystal bar along the central axis by 90 degrees clockwise again on the basis of the figure 3, repeating the operation S21 again, and measuring the moving angle W3 when the crystal bar is rotated to enable the X-ray detector to display the maximum reflection intensity;
s24, rotating the crystal bar along the central axis by 90 degrees clockwise again on the basis of the figure 4, repeating the operation S21 again, and measuring the moving angle W4 when the crystal bar is rotated to enable the X-ray detector to display the maximum reflection intensity;
s25, obtaining angles alpha and beta of crystal bar bonding required deflection according to the measured 4 moving angle values, wherein the angles alpha and beta are as follows:
α=1/2（W1-W3）；
β=1/2（W2-W4）；
α is the horizontal rotation angle of the ingot, and β is the rotation angle of Notch.
Further, the backup pad in S3 includes the bottom plate and sets up two curb plates in the bottom plate top, and the resin board setting is between two curb plates, and the arc recess of indent formula is all seted up to inboard corresponding position department of two curb plates, and two arc recess faces connect gradually with the indent formula arcwall face of resin board and enclose jointly into the curved holding surface that is used for placing the crystal bar.
Furthermore, the alpha angle orientation device comprises an alpha angle orientation instrument and an orientation plate, the orientation plate is connected with the alpha angle orientation instrument and can adjust the angle according to the signal feedback of the alpha angle orientation instrument, the orientation plate is arranged opposite to the workpiece steel plate, and the orientation plate is provided with a mounting groove for mounting the crystal bar.
Further, the specific step of step S4 is: adjusting the orientation plate to the deflection position of the alpha angle by an alpha angle orientation instrument, installing the crystal bar bonded with the resin plate in the step S3 in the installation groove of the orientation plate, coating glue on one side of the crystal bar away from the resin plate, abutting the crystal bar on a workpiece steel plate before the glue is cured, and finely adjusting the alpha angle before the glue is cured to enable the alpha angle to be equal to the previous measured value.
The beneficial effects of the invention are mainly shown in the following aspects: the method can be applied to bonding of 12-inch semiconductor wafers, can optimize the measurement accuracy of the crystal orientation from +/-30 'to +/-15', and meets the requirement of the 12-inch semiconductor wafers on the crystal orientation. Meanwhile, the bonding method is optimized, and the problem that the beta angle is not easy to control is solved by adopting a staged bonding method, so that the crystal orientation precision of the crystal bar is ensured, and the cost for purchasing full-automatic bar bonding equipment is saved.
Drawings
FIG. 1 is a top view of an ingot angle measurement of the present invention;
FIG. 2 is a schematic structural diagram of an angle measurement diagram (top) of an ingot according to the present invention;
FIG. 3 is a schematic structural diagram of an angle measurement diagram (right) of an ingot according to the present invention;
FIG. 4 is a schematic structural view of an angle measurement diagram (lower) of an ingot according to the present invention;
FIG. 5 is a schematic view of the structure of an angle measurement diagram (left) of an ingot according to the present invention;
FIG. 6 is a schematic structural view of a support plate and a resin plate of the present invention;
fig. 7 is a schematic structural view of the alpha angle orienting device of the present invention.
The labels in the figure are: 1. notch angle, 2, X-ray emission source, 3, X-ray detector, 4, resin plate, 5, bottom plate, 501, side plate, 6, alpha angle orientation instrument, 7, orientation plate, 8, workpiece steel plate, 9 and crystal bar.
Detailed Description
The embodiments of the present invention are described in detail with reference to the accompanying drawings, and the embodiments and specific operations of the embodiments are provided on the premise of the technical solution of the present invention, but the scope of the present invention is not limited to the following embodiments.
A manual rod sticking method for a 12-inch semiconductor wafer comprises the following preparation steps:
s1, drawing a straight line a penetrating through the Notch angle 1 and the center of the end face circle on the end face of the seed crystal end of the crystal rod 9, and then drawing a straight line b penetrating through the center of the end face circle and perpendicular to the straight line a, wherein the intersection point of the straight line a and the straight line b is the end face circle center and is marked as a point A;
s2, horizontally placing the crystal bar 9 on an X-ray machine, enabling the end face of the seed crystal end to face outwards, opening an X-ray emission source 2, and measuring angles alpha and beta of the crystal bar 9 to be bonded and needing to be deflected by combining an X-ray detector 3 and adopting a crystal orientation measuring method; the crystal orientation measurement method is to calculate the moving angle value when the maximum reflection intensity of the Notch angle in four directions is taken; the step of measuring the deflection angles alpha and beta required for bonding the crystal bar 9 in S2 comprises the following steps:
s21, the Notch angle 1 is vertically upward, the crystal bar 9 is rotated and moved around the point A at the moment, and the moving angle W1 when the X-ray detector 3 displays the maximum reflection intensity is found out;
s22, rotating the crystal bar 9 clockwise 90 degrees along the central axis, repeating the operation S21, and measuring the moving angle W2 when the crystal bar 9 is rotated to enable the X-ray detector 3 to display the maximum reflection intensity;
s23, rotating the ingot 9 clockwise again by 90 ° along the central axis on the basis of fig. 3, repeating the above-mentioned S21, and measuring the moving angle W3 when the ingot 9 is rotated to make the X-ray detector 3 show the maximum reflection intensity;
s24, rotating the ingot 9 clockwise again by 90 ° along the central axis on the basis of fig. 4, repeating the above-mentioned S21, and measuring the moving angle W4 when the ingot 9 is rotated to make the X-ray detector 3 show the maximum reflection intensity;
s25, obtaining the angles alpha and beta of the crystal bar 9 needed to be deflected according to the measured 4 moving angle values, wherein the angles are as follows:
α=1/2（W1-W3）；
β=1/2（W2-W4）；
α is the horizontal rotation angle of the ingot 9, and β is the rotation angle of Notch 1.
S3, the manual rod bonding method is that the 12-inch crystal rod, the resin plate and the workpiece steel plate are bonded at the same time in the same stage, the bonding is divided into two steps, the first bonding step is to bond the 12-inch crystal rod and the resin plate and wait for glue to solidify, and the second bonding step is to bond the crystal rod bonded with the resin plate in the first step and the workpiece steel plate.
The first step comprises the following specific steps: the resin plate 4 used for being bonded with the crystal bar 9 is arranged in the supporting plate, the top surface of the resin plate 4 is an inwards concave arc-shaped surface, the supporting plate comprises a bottom plate 5 and two side plates 501 arranged above the bottom plate 5, the two side plates 501 are arranged perpendicular to the bottom plate 5 in the vertical direction, the two side plates 501 and the bottom plate 5 are sequentially connected end to form a concave structure, the resin plate 4 is arranged above the bottom plate 5 between the two side plates 501, inwards concave arc-shaped grooves are formed in the positions corresponding to the inner sides of the two side plates 501, and the two arc-shaped groove surfaces and the inwards concave arc-shaped surface of the resin plate 4 are sequentially and naturally, smoothly and excessively connected to form an arc-shaped supporting surface for placing the crystal bar 9; firstly, gluing the top surface of a resin plate 4, placing a crystal bar 9 on the resin plate 4 along the axis direction, forming an arc-shaped supporting surface by enclosing two arc-shaped groove surfaces and the concave arc-shaped surface of the resin plate 4 together to support the crystal bar 9, and finely adjusting a beta angle before glue curing to enable the beta angle to be equal to a previous measured value;
the supporting plate is made of marble and is customized for the crystal bar, thin rubber is pasted on the arc-shaped grooves at the corresponding positions on the inner sides of the two side plates 501, the thickness of the rubber is not more than 1mm, and therefore the arc-shaped grooves can be prevented from being in direct contact with the crystal bar; the size of the resin plate and the size of the arc surface contacted with the crystal bar are matched with the actual resin plate and the crystal bar. The length of the supporting plate between the two side plates 501 is 300-400 mm, and the length requirement of all 12-inch semiconductor wafers can be met.
S4, the second step of bonding comprises the following specific steps: taking out the crystal bar 9 adhered with the resin plate 4 in the step S3, adjusting the alpha angle orientation device to adjust the orientation plate 7 of the alpha angle orientation device to the deflection position of the alpha angle, and adhering the crystal bar 9 on the workpiece steel plate 8, wherein the step S4 comprises the following specific steps: adjusting an orientation plate 7 to a deflection position of an angle alpha by an angle alpha orientation instrument 6, installing the crystal bar 9 adhered with the resin plate 4 in the step S3 in an installation groove of the orientation plate 7, coating glue on one side of the crystal bar 9 far away from the resin plate 4, abutting the crystal bar 9 on a workpiece steel plate 8 before the glue is cured, and finely adjusting the angle alpha before the glue is cured to enable the angle alpha to be equal to the measured value before.
The alpha angle orientation device comprises an alpha angle orientation instrument 6 and an orientation plate 7, wherein the orientation plate 7 is connected with the alpha angle orientation instrument 6, the orientation plate 7 can adjust the angle according to the signal feedback of the alpha angle orientation instrument 6, the orientation plate 7 is arranged opposite to the workpiece steel plate 8, and the orientation plate 7 is provided with a mounting groove for mounting a crystal bar 9.
Example 1
A manual rod sticking method for a 12-inch semiconductor wafer is characterized in that: firstly, drawing a straight line a penetrating through the Notch angle 1 and the center of a circle on the end face of the seed crystal end of the crystal rod 9 by using a marking pen and a circle center ruler, and then drawing a straight line b penetrating through the center of a circle of the end face and being perpendicular to the straight line a, wherein the intersection point of the straight line a and the straight line b is the center A of the circle of the end face.
Horizontally placing the crystal bar 9 on a rotary platform on an X-ray machine, with the end face of the seed crystal facing outwards, and opening an X-ray emission source 2, as shown in figure 1;
(a) the Notch angle 1 is vertically upward, as shown in fig. 2, the crystal bar is rotated and moved around the point a at this time, and the moving angle W1 when the X-ray detector 3 shows the maximum reflection intensity is found;
(b) rotating the ingot clockwise 90 degrees along the central axis, as shown in FIG. 3, repeating the operation of the step (a), and measuring a moving angle W2 when the ingot is rotated to make the X-ray detector 3 show the maximum reflection intensity;
(c) rotating the ingot clockwise by 90 ° again along the central axis based on FIG. 3, and repeating the above step (a) to measure the moving angle W3 when the ingot 9 is rotated to make the X-ray detector 3 show the maximum reflection intensity;
(d) rotating the ingot clockwise by 90 ° again along the central axis based on FIG. 4, and repeating the above step (a) to measure the moving angle W4 when the ingot is rotated to make the X-ray detector 3 show the maximum reflection intensity;
then, according to the measured 4 moving angle values, the angles alpha and beta of the crystal bar bonding needing to deflect can be obtained, and the angles are respectively as follows:
α=1/2（W1-W3）；
β=1/2（W2-W4）；
α is the horizontal rotation angle of the ingot, and β is the rotation angle of Notch. In the conventional manual measurement method, only the values of W1 and W2 are taken, namely, α = W1 and β = W2; on products with low requirements on the crystal orientation, such as small size products, only two values are selected without problems, the precision can reach within +/-30 ', and the precision can reach within +/-15' when the method provided by the invention is used for measuring 9.
After the angles α and β are obtained, a step bonding method is used, as shown in fig. 6, and the first step specifically comprises the following steps: the resin plate 4 used for being bonded with the crystal bar 9 is arranged in the supporting plate, the top surface of the resin plate 4 is an inwards concave arc-shaped surface, the supporting plate comprises a bottom plate 5 and two side plates 501 arranged above the bottom plate 5, the two side plates 501 are arranged perpendicular to the bottom plate 5 in the vertical direction, the two side plates 501 and the bottom plate 5 are sequentially connected end to form a concave structure, the resin plate 4 is arranged above the bottom plate 5 between the two side plates 501, inwards concave arc-shaped grooves are formed in the positions corresponding to the inner sides of the two side plates 501, and the two arc-shaped groove surfaces and the inwards concave arc-shaped surface of the resin plate 4 are sequentially and naturally, smoothly and excessively connected to form an arc-shaped supporting surface for placing the crystal bar 9; firstly, gluing the top surface of a resin plate 4, placing a crystal bar 9 on the resin plate 4 along the axis direction, forming an arc-shaped supporting surface by enclosing two arc-shaped groove surfaces and the concave arc-shaped surface of the resin plate 4 together to support the crystal bar 9, and finely adjusting a beta angle before glue curing to enable the beta angle to be equal to a previous measured value;
the second bonding step comprises the following specific steps: referring to fig. 7, the crystal bar 9 bonded with the resin plate 4 is taken out, the alpha angle orientation device is adjusted, the orientation plate 7 of the alpha angle orientation device is adjusted to the deflection position of the alpha angle, and then the crystal bar 9 is bonded on the workpiece steel plate 8, and the specific steps of the step S4 are: adjusting an orientation plate 7 to a deflection position of an angle alpha by an angle alpha orientation instrument 6, installing the crystal bar 9 adhered with the resin plate 4 in the step S3 in an installation groove of the orientation plate 7, coating glue on one side of the crystal bar 9 far away from the resin plate 4, abutting the crystal bar 9 on a workpiece steel plate 8 before the glue is cured, and finely adjusting the angle alpha before the glue is cured to enable the angle alpha to be equal to the measured value before.
The method is applied to bonding of 12-inch semiconductor wafers, the measurement accuracy of the crystal orientation is optimized from +/-30 'to +/-15' by adopting the method, the requirement of the 12-inch semiconductor wafers on the crystal orientation is met, meanwhile, the bonding method is optimized by adopting a staged bonding method, and a customized marble clamping groove tool is matched, so that the problem that the beta angle is not easy to control is solved, the crystal orientation accuracy of crystal bars is guaranteed, and money for purchasing full-automatic bar bonding equipment is saved.
It is further noted that relational terms such as i, ii, and iii may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Claims (5)
1. A manual rod sticking method for a 12-inch semiconductor wafer is characterized in that: the preparation method comprises the following preparation steps:
s1, drawing a straight line a penetrating through the Notch and the center of the end face on the end face of the seed crystal end of the crystal bar, and then drawing a straight line b penetrating through the center of the end face and perpendicular to the straight line a, wherein the intersection point of the straight line a and the straight line b is the center of the end face and is marked as a point A; s2, horizontally placing the crystal bar on an X-ray machine, enabling the end face of the seed crystal end to face outwards, opening an X-ray emission source, and measuring angles alpha and beta of the crystal bar to be deflected by combining an X-ray detector;
s3, arranging a resin plate used for being bonded with the crystal bar in the support plate, wherein the top surface of the resin plate is an inwards concave arc-shaped surface, gluing the top surface of the resin plate, placing the crystal bar on the resin plate along the axis direction, supporting the crystal bar by the joint action of the resin plate and the support plate, and finely adjusting a beta angle before the glue is cured to enable the beta angle to be equal to the previous measured value;
and S4, taking out the crystal bar bonded with the resin plate in the step S3, adjusting the alpha angle orientation device to adjust the orientation plate of the alpha angle orientation device to the deflection position of the alpha angle, and bonding the crystal bar on the workpiece steel plate.
2. A manual bar bonding method for a 12 "semiconductor wafer as claimed in claim 1, wherein: the step of measuring the deflection angles alpha and beta required by the crystal bar bonding in the S2 comprises the following steps:
s21, the Notch angle is vertically upward, the crystal bar is rotated and moved around the point A at the moment, and the moving angle W1 when the X-ray detector shows the maximum reflection intensity is found out;
s22, rotating the crystal bar clockwise 90 degrees along the central axis, repeating the operation S21, and measuring the moving angle W2 when the crystal bar is rotated to enable the X-ray detector to display the maximum reflection intensity;
s23, rotating the crystal bar along the central axis by 90 degrees clockwise again on the basis of the figure 3, repeating the operation S21 again, and measuring the moving angle W3 when the crystal bar is rotated to enable the X-ray detector to display the maximum reflection intensity;
s24, rotating the crystal bar along the central axis by 90 degrees clockwise again on the basis of the figure 4, repeating the operation S21 again, and measuring the moving angle W4 when the crystal bar is rotated to enable the X-ray detector to display the maximum reflection intensity;
s25, obtaining angles alpha and beta of crystal bar bonding required deflection according to the measured 4 moving angle values, wherein the angles alpha and beta are as follows:
α=1/2（W1-W3）；
β=1/2（W2-W4）；
α is the horizontal rotation angle of the ingot, and β is the rotation angle of Notch.
3. A manual bar bonding method for a 12 "semiconductor wafer as claimed in claim 1, wherein: the backup pad in S3 includes the bottom plate and sets up two curb plates in the bottom plate top, and the resin board setting is between two curb plates, and the arc recess of indent formula is all seted up in the inboard corresponding position department of two curb plates, and two arc recess faces connect gradually with the indent formula arcwall face of resin board and enclose jointly and become the curved holding surface that is used for placing the crystal bar.
4. A manual bar bonding method for a 12 "semiconductor wafer as claimed in claim 1, wherein: the alpha angle orienting device comprises an alpha angle orienting instrument and an orienting plate, wherein the orienting plate is connected with the alpha angle orienting instrument and can adjust the angle according to the signal feedback of the alpha angle orienting instrument, the orienting plate is arranged opposite to the workpiece steel plate, and the orienting plate is provided with a mounting groove for mounting a crystal bar.
5. A manual bar bonding method for a 12-inch semiconductor wafer as defined in claim 4, wherein: the specific steps of step S4 are: adjusting the orientation plate to the deflection position of the alpha angle by an alpha angle orientation instrument, installing the crystal bar bonded with the resin plate in the step S3 in the installation groove of the orientation plate, coating glue on one side of the crystal bar away from the resin plate, abutting the crystal bar on a workpiece steel plate before the glue is cured, and finely adjusting the alpha angle before the glue is cured to enable the alpha angle to be equal to the previous measured value.
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| CN202110774726.0A CN113787636B (en) | 2021-07-09 | 2021-07-09 | Manual bar adhering method for 12-inch semiconductor wafer |
| PCT/CN2022/104108 WO2023280201A1 (en) | 2021-07-09 | 2022-07-06 | Manual ingot bonding method for 12-inch semiconductor wafer |
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| CN202110774726.0A CN113787636B (en) | 2021-07-09 | 2021-07-09 | Manual bar adhering method for 12-inch semiconductor wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114714526A (en) * | 2022-04-01 | 2022-07-08 | 宁夏中欣晶圆半导体科技有限公司 | Bonding method for two-dimensionally adjusting crystal orientation of single crystal silicon rod |
| CN115478325A (en) * | 2022-08-15 | 2022-12-16 | 江西兆驰半导体有限公司 | Stick sticking orientation instrument, stick sticking device and stick sticking method |
| WO2023280201A1 (en) * | 2021-07-09 | 2023-01-12 | 麦斯克电子材料股份有限公司 | Manual ingot bonding method for 12-inch semiconductor wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023280201A1 (en) * | 2021-07-09 | 2023-01-12 | 麦斯克电子材料股份有限公司 | Manual ingot bonding method for 12-inch semiconductor wafer |
| CN114714526A (en) * | 2022-04-01 | 2022-07-08 | 宁夏中欣晶圆半导体科技有限公司 | Bonding method for two-dimensionally adjusting crystal orientation of single crystal silicon rod |
| CN115478325A (en) * | 2022-08-15 | 2022-12-16 | 江西兆驰半导体有限公司 | Stick sticking orientation instrument, stick sticking device and stick sticking method |
| CN115478325B (en) * | 2022-08-15 | 2024-01-26 | 江西兆驰半导体有限公司 | Stick sticking orientation instrument, oriented stick sticking device and oriented stick sticking method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023280201A1 (en) | 2023-01-12 |
| CN113787636B (en) | 2022-05-27 |
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