CN113707591A - 静电卡盘和其制造方法以及基板处理装置 - Google Patents
静电卡盘和其制造方法以及基板处理装置 Download PDFInfo
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- CN113707591A CN113707591A CN202110521701.XA CN202110521701A CN113707591A CN 113707591 A CN113707591 A CN 113707591A CN 202110521701 A CN202110521701 A CN 202110521701A CN 113707591 A CN113707591 A CN 113707591A
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- electrostatic chuck
- heating unit
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- substrate
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract
本发明公开一种静电卡盘和其制造方法以及基板处理装置。根据本发明的静电卡盘包括:电介质板,内置有电极而用于静电吸附基板;底座面板,配置于所述电介质板下方;以及加热单元,提供于所述底座面板,并能够独立加热基板的多个区域,从而能够分别独立控制基板的多个区域的温度,因此能够提高基板的温度均匀度。
Description
技术区段
本发明涉及一种内置有加热器的静电卡盘和其制造方法以及包括该静电卡盘的基板处理装置。
背景技术
在为了制造半导体元件或者显示器而处理基板时,在基板处理装置内部设置有支承基板的支承部件。其中,静电卡盘作为在基板处理过程中为了防止基板的移动或错位而固定基板的支承部件,是一种利用静电力将基板卡紧(chucking)于处理腔室内部的支承台或解除卡紧(dechuc king)的装置。
静电卡盘不仅支承基板,还具有根据各处理工艺调节基板的温度的功能。在基板处理工艺中,由于基板温度,膜质、加工形态以及表面状态敏感地发生变化。
通常,如图1那样,静电卡盘由底座面板300和其上面用隔热的粘接层200等附着的电介质板100构成,所述电介质板100包括加热器130、DC电极120。在所述电极120施加电压而使所述电介质板100和放置于电介质板100上面的基板W间产生静电力,从而能够静电吸附并固定基板W,通过所述加热器130调节基板W的温度。
最近,随着技术发展带来的图案细微化以及晶圆大型化的趋势,处理温度升高,为了增加静电卡盘的静电力而施加于所述电极的电压大幅升高。
由此,在电介质板和底座面板的接合界面中由于热膨胀系数差异而发生扭曲或弯曲,可能产生构造可靠性的问题。另外,可能发生基板表面的温度均匀度差异引起的不均匀的蒸镀或蚀刻不良,产生静电卡盘的寿命缩短的问题。
不仅如此,通常电介质层由陶瓷构成,并存在陶瓷电介质中包括加热器的构造制造非常困难而制造单价高的局限。
专利文献1:韩国专利授权公告第10-0804842号(2008.02.12)
发明内容
本发明提供一种静电卡盘和其制造方法以及包括其的基板处理装置,在底座面板中提供可独立控制基板的多个区域的加热器,从而能够提高基板表面的温度均匀度。
本发明提供一种包括容易制造的加热器的静电卡盘和其制造方法以及包括其的基板处理装置。
本发明的目的不限于前述,未提及的本发明的其它目的以及优点可以通过下面的说明来理解。
根据本发明的实施例,可以是,提供一种静电卡盘,包括:电介质板,内置有电极而用于静电吸附基板;底座面板,配置于所述电介质板下方;以及加热单元,提供于所述底座面板,并独立加热基板的多个区域。
可以是,所述加热单元包括:多个加热器,彼此分离配置;以及隔热部,设置于所述多个加热器之间。
可以是,所述隔热部包括内部空间。
可以是,所述内部空间用耐高温且隔热性高的物质充满。
或者,可以是,所述内部空间由气体充满。
或者,可以是,所述内部空间是真空状态。
或者,可以是,所述隔热部由隔热物质形成。
可以是,所述多个加热器和所述隔热部设置成环状。
可以是,所述加热单元还包括绝缘层。
可以是,所述底座面板在下方还包括冷却部件。
另外,可以是,所述冷却部件构成为供冷却流体流动的冷却流路。
可以是,通过所述冷却部件和所述加热单元的相互作用,温度调节变容易。
可以是,所述底座面板由铝(Al)构成。
可以是,根据本发明的实施例的静电卡盘制造方法包括:准备步骤,设置内置有电极的电介质板和底座面板;加热单元形成步骤,在所述底座面板形成加热单元;以及接合步骤,接合所述电介质板的下面和所述底座面板的上面。
可以是,所述加热单元形成步骤包括在所述底座面板埋入加热器的步骤。
此时,可以是,所述加热器是护套加热器(Sheath heater)。
或者,可以是,所述加热单元形成步骤包括在所述底座面板依次层叠加热单元的步骤。
此时,可以是,所述加热单元形成步骤包括将加热器进行图案化的步骤。
或者,可以是,所述加热单元包括聚酰亚胺薄膜加热器(polyimide filmheater)。
根据本发明的实施例,可以是,提供一种基板处理装置,包括:工艺腔室,提供基板处理空间;静电卡盘,配置于所述基板处理空间;以及等离子体发生器,用于在所述基板处理空间产生等离子体,所述静电卡盘包括:电介质板,内置有电极而用于静电吸附基板;底座面板,配置于所述电介质板下方;以及加热单元,提供于所述底座面板,并独立加热基板的多个区域,所述加热单元包括:多个加热器,彼此分离配置;隔热部,设置于所述多个加热器之间;以及绝缘层,围绕所述加热器,在所述底座面板的下方包括用于冷却所述基板的冷却部件。
根据本发明的静电卡盘提供为在底座面板包括加热单元,所述加热单元具备彼此分离配置的多个加热器和设置在多个加热器之间的隔热部,因此能够独立控制基板的多个区域。
另外,根据本发明的静电卡盘按基板的区域容易地调节热分布,从而能够均匀地处理基板。
另外,根据本发明的静电卡盘在底座面板包括加热单元而不是电介质板,从而静电卡盘制造方法变得容易,在价格方面非常有利。
附图说明
图1是示出包括现有的静电卡盘的基板处理装置的截面图。
图2是示出根据本发明的实施例的静电卡盘的结构的截面图。
图3是图2的俯视图。
图4是示出根据本发明的实施例的静电卡盘制造方法的流程图。
图5是示出根据本发明的一实施例的加热单元的制造过程的截面图。
图6是局部示出经过图5的过程完成的静电卡盘的结构的截面图。
图7是示出包括根据本发明的实施例的静电卡盘的基板处理装置的截面图。
(附图标记说明)
100:电介质板
200:粘接层
300:底座面板
400:加热单元
410:加热器
412:第一加热器
414:第二加热器
416:第三加热器
418:第四加热器
420:隔热部
422:第一切断部
424:第二切断部
426:第三切断部
428:第四切断部
430:绝缘层
500:主体
510:冷却部件
具体实施方式
下面,参照所附附图详细说明本发明的实施例。本发明可以以各种不同方式实现,不限于在此说明的实施例。
为了清楚地说明本发明,与本发明的本质无关的部分可以省略对其的详细说明,贯穿整个说明书相同或类似的构成要件可以赋予相同的附图标记。
另外,当表示某部分“包括”某构成要件时,只要没有特别相反的记载,其并不排除其它构成要件而意指可以还包括其它构成要件。在此所使用的术语只是为了提及特定实施例,并不是意图限定本发明,除非在本说明书中有不同地定义,否则可以解释为本发明所属技术领域中具有通常知识的人所理解的概念。
参照图2以及图3,说明根据本发明的实施例的静电卡盘10的整个结构。
根据本发明的实施例的静电卡盘10具有分割成多个区段而可独立控制的加热器。另外,根据本发明的实施例的静电卡盘10可以应用于用于处理CVD、溅射、蒸镀、蚀刻等离子体、测定、检查等基板处理工艺的基板处理装置。然而,不限于上述的工艺,可以使用于需要支承以及加热基板的装置。
图2是示出根据本发明的实施例的静电卡盘10的结构的截面图,图3是示出包括在所述静电卡盘10中的加热单元的结构的图2的俯视图。如图2以及图3所示,根据本发明的实施例的静电卡盘10包括电介质板100、底座面板300、加热单元400、主体500。
电介质板100位于静电卡盘10的上端部,在电介质板100的上面放置有处理对象物的基板。电介质板100提供为圆盘形状的电介质并由具有电介质特性的材质构成。例如,电介质板由陶瓷构成。电介质板100的上面具有比基板小的半径。在电介质板100可以形成有利用为向基板的底面供应导热气体的供应通道(未图示)。电介质板100包括静电电极120。
静电电极120位于电介质板100的内部。静电电极120与另外的电源(未图示)电连接。通过施加于静电电极120的电流在静电电极120和基板之间作用有静电力,基板通过静电力吸附于电介质板100。
在电介质板100的下方配置有底座面板300。此时,电介质板100的底面和底座面板300的上面通过粘接层200粘接。
底座面板300包括加热基板的加热单元400。具体地,加热单元400内置于底座面板300。加热单元400包括彼此分离配置的多个加热器410和配置在多个加热器410之间的隔热部420。
如图3所示,在底座面板300的内部形成有第一加热器412、第二加热器414、第三加热器416、第四加热器418、设置在第一加热器412和第二加热器414之间的第一切断部422、设置在第二加热器414和第三加热器416之间的第二切断部424、设置在第三加热器416和第四加热器418之间的第三切断部426、围绕第四加热器418的第四切断部428。由此,加热单元400分离成内置有第一加热器412的第一区段、内置有第二加热器414的第二区段、内置有第三加热器416的第三区段、内置有第四加热器418的第四区段。第一加热器412、第二加热器414、第三加热器416以及第四加热器418连接于各个外部接通端子(省略图示)而接通于加热器控制部(省略图示),由此可以独立控制。
此时,若在各个区段间发生热干涉以及热交换,则按区段独立控制的效果可能降低。为了防止这个,在各区段之间包括隔热部420而隔热各区段,使得各区段间的热干涉最小化,从而能够提高加热单元400的独立控制效果。
隔热部420可以包括内部空间。该内部空间可以用耐高温且隔热性高的隔热物质填充。作为一例,隔热部420可以由气体充满。此时,气体可以是空气(air)。或者,隔热部420可以是真空状态。若设置在第一加热器412和第二加热器414之间的第一切断部422由气体充满或处于真空状态,则第一加热器412和第二加热器414之间热交换变得困难,因此各区段有效地被隔热。同样地,第二切断部424防止第二加热器414和第三加热器416间的热交换,第三切断部426防止第三加热器416和第四加热器418间的热交换。另外,以相同原理,第四切断部428可以防止第四加热器418和外部间的热交换。
此时,隔热物质可以是如上述那样的气体,可以是油等之类液体,也可以是高温用隔热树脂类之类固体。例如,隔热物质可以包含二氧化锆(ZrO2)、三氧化二钇(Y2O3)、氧化铝(Al2O3)、云母、YAG(Yttrium Aluminium Garnet,钇铝石榴石)等。
隔热部420的内部空间构成为闭空间,从而能够防止在隔热部420内包括未意图的颗粒。若未意图的颗粒形成在隔热部420内部,则区段间隔热效率降低。因此,将隔热部420构成为不包括颗粒的闭空间,从而防止区段间的隔热效率降低。另外,通过此,充满于第一切断部422、第二切断部424、第三切断部426以及第四切断部428的气体、物质或者真空状态均匀地保持,从而减少区段间的隔热性能的面内差异。
另一方面,隔热部420可以由隔热物质形成。例如,隔热部420不包括内部空间,以氧化膜等形态构成而能够防止各加热器410之间的热交换。
即,隔热部420可以以包括由隔热物质充满(填充)的内部空间的形态构成或由隔热物质其本身形成。
通过这样的隔热部420能够切断各个加热器410免受来自周边的热干涉以及热影响,因此可以获得稳定的隔热效果。另外,通过稳定的隔热而提高各加热器410的独立控制能力。
构成加热单元400的多个加热器410可以利用通过电流产生焦耳(Joule)热的导电体。例如,可以利用钨(W)、钽(Ta)、钼(Mo)、铂(Pt)等高熔点金属。或者,也可以利用包含铁(Fe)、铬(Cr)以及铝(Al)的合金,或包含镍(Ni)以及铬(Cr)的合金,或SiC、钼硅酮以及碳(C)等非金属体。
加热单元400可以还包括绝缘层430。具体地,加热单元400的各个加热器410可以内置于绝缘层430。绝缘层430是为了防止加热器410与其它部件电接通而配置。即,可以利用将第一加热器412、第二加热器414、第三加热器416以及第四加热器418与其它部件充分绝缘的材料来构成。作为绝缘层430,可以利用氧化铝(Al2O3)、氮化铝(AlN)、二氧化硅(SiO2)、氮化硅(SiN)等。
如上,通过第一切断部422可以在第一区段和第二区段之间获得高的隔热效果,通过第二切断部424可以在第二区段和第三区段之间获得高的隔热效果,通过第三切断部426可以在第三区段和第四区段之间获得高的隔热效果,通过第四切断部428可以在第四区段和外部环境之间获得高的隔热效果。因此,通过隔热部420的隔热效果可以不依赖于使用环境。另外,通过稳定的隔热而各加热器410的独立控制能力得到提高,由此可以提高各区段的温度控制性,因此可以提供温度的面内均匀性高或者能够按区段意图地设置温度差的加热单元400。由此,可以根据使用环境而准确地控制各区段的温度。
另外,以上例示出通过第一加热器412、第二加热器414、第三加热器416、第四加热器418、第一切断部422、第二切断部424、第三切断部426、第四切断部428划分为四个区段的加热单元400,但是划分加热单元的方式不限于此。被分离的区段的数量可任意适当地设定。
另外,根据图3,在多个加热器410和各加热器之间存在的隔热部420配置成以底座面板300为中心具有彼此不同半径的环状。这样的加热器和隔热部的形态不限于环状。即,被划分的区段的形状可以更多样。例如,加热单元可以是以底座面板的中心为基准上下左右4分割的形态。
主体500可以设置于底座面板300的下方,并在内部提供冷却静电卡盘10的冷却部件。
静电卡盘10还包括冷却部件510,从而可以提高温度控制的容易性。冷却部件510可以提供为供冷却流体流动的冷却流路。冷却流路提供为供冷却流体循环的通道。冷却流路可以与另外的的冷却流体供应管道(省略图示)连接。可以通过冷却流体供应管道(省略图示)接收冷却成预定温度的冷却流体的供应并使冷却流体循环来冷却底座面板300。底座面板300被冷却的同时将电介质板100和基板一起冷却,使基板保持为预定温度。
此时,可以通过冷却静电卡盘10的冷却部件510和加热静电卡盘10的加热器410的相互作用来控制静电卡盘10的温度。例如,控制流向冷却流路的冷却水温度,通过基于冷却水温度的加热器410输出变化来更容易地控制静电卡盘10的温度。
作为底座面板300,可以使用铝(Al)、钛(Ti)等,本发明中的底座面板300例示为由铝构成。
参照图4,制造上述那样的静电卡盘10的方法包括:设置内置有电极的电介质板和底座面板的准备步骤(S10);在底座面板形成加热单元的加热单元形成步骤(S20);接合电介质板的下面和底座面板的上面的接合步骤(S30)。
在准备步骤(S10)中,将内置有电极的电介质板100和底座面板300分别设置成半径相同的圆盘形状。此时,电介质板100优选由陶瓷构成,底座面板300优选由铝构成。
将加热单元400内置于由铝构成的底座面板300的加热单元400形成步骤(S20)将已设置的底座面板300划分为多个区域,按各区域配置由绝缘体围绕的加热器,将各加热器之间由隔热部构成,从而加热单元400。
例如,可以在设置有圆盘形状的底座面板300形成如图3那样具有与中心圆彼此不同的半径的环状的多个槽,在各个槽中交替***用绝缘体围绕的加热器和绝缘物质之后其上方用圆盘形状的金属面板或者绝缘面板收尾而将加热器内置于底座面板300。此时,金属面板优选由与底座面板之类的物质形成,绝缘体以及绝缘面板可以使用氧化铝(Al2O3)、氮化铝(AlN)、氧化硅(SiO2)、氮化硅(SiN)等。内置于底座面板300的加热器可以使用高效、加工性好的护套加热器(sheath heater)。
另外,加热单元形成步骤(S20)可以在已设置的底座面板300的上面依次涂层并层叠加热单元400的构成要件,并将形成有加热单元的上面用底座面板300覆盖。
图5是示出通过层叠制造加热单元400的过程的图。为了便于说明,放大或缩小表示了附图的构成要件。
首先,在以圆盘状设置的底座面板300的上面涂层绝缘层430。作为绝缘层430,可以利用氧化铝(Al2O3)、氮化铝(AlN)、氧化硅(SiO2)、氮化硅(SiN)等。此时,涂层绝缘层430的方法可以使用物理蒸镀方式或者化学蒸镀方式等各种方式。而且,已涂层的绝缘层430的上面呈多个环状划分成区域而在各区域利用溅射(Sputtering)方式对加热器410进行图案化。
加热器410可以利用钨(W)、钽(Ta)、钼(Mo)、铂(Pt)等之类高熔点金属来进行图案化。或者,可以利用包含铁(Fe)、铬(Cr)以及铝(Al)的合金,或者包含镍(Ni)以及铬(Cr)等的合金。
另一方面,对加热器410进行图案化的方法不仅可以使用溅射(Sputtering),还可以使用印刷、蒸镀等各种方式。对加热器410进行图案化之后,再次涂层绝缘层43而覆盖加热器之间的空余空间和加热器上方。由此,在底座面板300上面形成由绝缘层430围绕的多个加热器410。
为了在由绝缘层430围绕的各加热器410之间形成隔热部420,可以使用蚀刻(Etchiing)方式。通过隔热部420,可以完全分离各加热器410间的区段。此时,不使底座面板300被蚀刻。其次,在被蚀刻的区域中***隔热物质或涂层而形成隔热部420。此时,隔热物质可以包含二氧化锆(ZrO2)、三氧化二钇(Y2O3)、氧化铝(Al2O3)、云母、YAG(YttriumAluminium Garnet,钇铝石榴石)等。或者,也可以具备另外的盖子(未图示)而将被蚀刻的区域形成为闭空间,将闭空间用气体充满或形成为真空状态,从而构成隔热部420。
最后,将形成完加热单元的上面用与底座面板300相同的物质进行涂层。或者,也可以在形成完加热单元的上面接合由与底座面板300相同的物质构成的圆盘形状的面板而收尾。如此,可以通过将加热单元400的构成要件依次涂层并层叠的方式将加热单元400形成于底座面板300的内部。
图6是示出通过截止到图5的过程之后经过接合步骤完成的静电卡盘10的局部的截面图。
在接合步骤(S30)中,在已设置的电介质板100的下面或者底座面板300的上面形成粘接层200而接合成与电介质板100的下面和底座面板300的上面相面对。此时,粘接层即可以包括高温接合用玻璃或者低温接合用玻璃,也可以将两者都包括。
另外,在上述的底座面板形成加热单元的步骤(S20)中,加热器可以是聚酰亚胺薄膜加热器(polyimide film heater)。
图7示出包括根据本发明的实施例的静电卡盘10的基板处理装置的一例。根据本发明的静电卡盘10可以应用于CVD、溅射、蒸镀、蚀刻等离子体、测定、检查等基板处理工艺,但在本发明中例示为等离子体装置。静电卡盘10配置于提供有基板处理空间的工艺腔室20的内部,在静电卡盘10的上方介有用于向基板处理空间产生等离子体的等离子体发生器30。本发明所属技术领域中的人员能够充分理解下面内容,因此予以省略。
如此,在底座面板***加热器的方式比将加热器***于由陶瓷构成的电介质板的方式非常容易且价格方面有利。另外,配置可独立控制的多个加热器和隔热部而分离基板加热区域,从而能够将基板的温度按区域进行控制,能够提高基板的温度均匀度。
本发明所属技术领域的人员可以将本发明在不变更其技术构思或必要特征的情况下以其它具体方式实施,因此应理解为以上叙述的实施例在所有方面是例示性的,而不是限定性的。
本发明的范围是通过所附的权利要求书来表现而不是通过详细的说明来表现,应理解为权利要求书的含义、范围以及从其等同概念导出的所有变更或者变形方式包括在本发明的范围内。
Claims (20)
1.一种静电卡盘,包括:
电介质板,内置有电极而用于静电吸附基板;
底座面板,配置于所述电介质板下方;以及
加热单元,提供于所述底座面板,并独立加热基板的多个区域。
2.根据权利要求1所述的静电卡盘,其特征在于,
所述加热单元包括:
多个加热器,彼此分离配置而被独立控制;以及
隔热部,设置于所述多个加热器之间。
3.根据权利要求2所述的静电卡盘,其特征在于,
所述隔热部包括内部空间。
4.根据权利要求3所述的静电卡盘,其特征在于,
所述内部空间用隔热物质填充。
5.根据权利要求3所述的静电卡盘,其特征在于,
所述内部空间由气体充满。
6.根据权利要求3所述的静电卡盘,其特征在于,
所述内部空间是真空。
7.根据权利要求2所述的静电卡盘,其特征在于,
所述隔热部由隔热物质形成。
8.根据权利要求2所述的静电卡盘,其特征在于,
所述多个加热器和所述隔热部设置成环状。
9.根据权利要求1所述的静电卡盘,其特征在于,
所述加热单元还包括绝缘层。
10.根据权利要求1所述的静电卡盘,其特征在于,
在所述底座面板的下方还包括冷却部件。
11.根据权利要求10所述的静电卡盘,其特征在于,
所述冷却部件包括供冷却流体流动的冷却流路。
12.根据权利要求11所述的静电卡盘,其特征在于,
通过所述冷却部件和所述加热单元的相互作用来调节基板的温度。
13.根据权利要求1所述的静电卡盘,其特征在于,
所述底座面板由铝构成。
14.一种静电卡盘制造方法,包括:
准备步骤,设置内置有电极的电介质板和底座面板;
加热单元形成步骤,在所述底座面板形成加热单元;以及
接合步骤,接合所述电介质板的下面和所述底座面板的上面。
15.根据权利要求14所述的静电卡盘制造方法,其特征在于,
所述加热单元形成步骤包括在所述底座面板埋入加热器的步骤。
16.根据权利要求15所述的静电卡盘制造方法,其特征在于,
所述加热器包括护套加热器。
17.根据权利要求14所述的静电卡盘制造方法,其特征在于,
所述加热单元形成步骤包括在所述底座面板涂层并层叠加热单元的步骤。
18.根据权利要求17所述的静电卡盘制造方法,其特征在于,
所述加热单元形成步骤包括将加热器进行图案化的步骤。
19.根据权利要求14所述的静电卡盘制造方法,其特征在于,
所述加热单元包括聚酰亚胺薄膜加热器。
20.一种基板处理装置,包括:
工艺腔室,提供基板处理空间;
静电卡盘,配置于所述基板处理空间;以及
等离子体发生器,用于在所述基板处理空间产生等离子体,
所述静电卡盘包括:
电介质板,内置有电极而用于静电吸附基板;
底座面板,配置于所述电介质板下方;以及
加热单元,提供于所述底座面板,并独立加热基板的多个区域,
所述加热单元包括:多个加热器,彼此分离配置;隔热部,设置于所述多个加热器之间;以及绝缘层,围绕所述加热器,
在所述底座面板的下方包括用于冷却所述基板的冷却部件。
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