CN113692650A - 薄膜晶体管及其制备方法、显示基板、显示面板 - Google Patents

薄膜晶体管及其制备方法、显示基板、显示面板 Download PDF

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CN113692650A
CN113692650A CN202080000327.2A CN202080000327A CN113692650A CN 113692650 A CN113692650 A CN 113692650A CN 202080000327 A CN202080000327 A CN 202080000327A CN 113692650 A CN113692650 A CN 113692650A
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China
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layer
thin film
electrode layer
film transistor
electrode
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CN202080000327.2A
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薛大鹏
刘正
胡合合
王利忠
董水浪
姚念琦
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BOE Technology Group Co Ltd
Fuzhou BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Fuzhou BOE Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers
    • H01L21/47635—After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

本申请涉及显示技术领域，公开了一种薄膜晶体管及其制备方法、显示基板、显示面板，目的是改善薄膜晶体管的结构，提高薄膜晶体管的特性，提高显示产品良率。薄膜晶体管包括：衬底基板；有源层，位于所述衬底基板上；源漏电极，位于所述有源层背离所述衬底基板的一侧，包括电极层和保护层，所述电极层的材料包括第一金属元素；所述保护层覆盖所述电极层背离所述衬底基板的一侧表面以及所述电极层的侧面，所述保护层的材料为所述第一金属元素的氧化物。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN202080000327.2A 2020-03-19 2020-03-19 薄膜晶体管及其制备方法、显示基板、显示面板 Pending CN113692650A (zh)

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PCT/CN2020/080260 WO2021184312A1 (zh) 2020-03-19 2020-03-19 薄膜晶体管及其制备方法、显示基板、显示面板

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CN113692650A true CN113692650A (zh) 2021-11-23

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US (1) US20230110228A1 (zh)
EP (1) EP4113628A4 (zh)
CN (1) CN113692650A (zh)
WO (1) WO2021184312A1 (zh)

Citations (7)

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Publication number Priority date Publication date Assignee Title
CN102648526A (zh) * 2009-12-04 2012-08-22 株式会社半导体能源研究所 半导体器件及其制造方法
WO2012141089A1 (ja) * 2011-04-11 2012-10-18 株式会社日立製作所 表示装置およびその製造方法
CN103227206A (zh) * 2012-01-26 2013-07-31 日立电线株式会社 薄膜晶体管、其制造方法以及使用了该薄膜晶体管的显示装置
US20150155362A1 (en) * 2013-11-29 2015-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2015119174A (ja) * 2013-11-15 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び表示装置
US20160197192A1 (en) * 2015-01-02 2016-07-07 Samsung Display Co., Ltd. Thin film transistor array panel and method of manufacturing the same
CN107004719A (zh) * 2014-11-28 2017-08-01 夏普株式会社 半导体装置及其制造方法

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KR100623816B1 (ko) * 2002-12-26 2006-09-18 엘지.필립스 엘시디 주식회사 블랙 매트릭스 형성방법 및 이를 이용한 액정표시장치
KR101308437B1 (ko) * 2006-08-03 2013-09-16 엘지디스플레이 주식회사 액정표시장치의 제조방법
JP5171990B2 (ja) * 2011-05-13 2013-03-27 株式会社神戸製鋼所 Ｃｕ合金膜および表示装置
CN102386237A (zh) * 2011-11-23 2012-03-21 深圳市华星光电技术有限公司 一种薄膜晶体管、阵列基板及装置和一种制备方法
KR102089314B1 (ko) * 2013-05-14 2020-04-14 엘지디스플레이 주식회사 산화물 박막 트랜지스터 및 그 제조방법
US9991392B2 (en) * 2013-12-03 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN105097950A (zh) * 2015-08-24 2015-11-25 京东方科技集团股份有限公司 薄膜晶体管及制作方法、阵列基板、显示装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102648526A (zh) * 2009-12-04 2012-08-22 株式会社半导体能源研究所 半导体器件及其制造方法
WO2012141089A1 (ja) * 2011-04-11 2012-10-18 株式会社日立製作所 表示装置およびその製造方法
CN103227206A (zh) * 2012-01-26 2013-07-31 日立电线株式会社 薄膜晶体管、其制造方法以及使用了该薄膜晶体管的显示装置
JP2015119174A (ja) * 2013-11-15 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び表示装置
US20150155362A1 (en) * 2013-11-29 2015-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN107004719A (zh) * 2014-11-28 2017-08-01 夏普株式会社 半导体装置及其制造方法
US20160197192A1 (en) * 2015-01-02 2016-07-07 Samsung Display Co., Ltd. Thin film transistor array panel and method of manufacturing the same

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US20230110228A1 (en) 2023-04-13
EP4113628A4 (en) 2023-04-26
WO2021184312A1 (zh) 2021-09-23
EP4113628A1 (en) 2023-01-04

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