CN113549453B - CuO-based composite material with high photoelectric property - Google Patents
CuO-based composite material with high photoelectric property Download PDFInfo
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- CN113549453B CN113549453B CN202110820254.8A CN202110820254A CN113549453B CN 113549453 B CN113549453 B CN 113549453B CN 202110820254 A CN202110820254 A CN 202110820254A CN 113549453 B CN113549453 B CN 113549453B
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
- C09K11/68—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals containing chromium, molybdenum or tungsten
- C09K11/681—Chalcogenides
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- C01G3/00—Compounds of copper
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- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
Abstract
The invention discloses a CuO-based composite material with high photoelectric propertyThe composite material is prepared by mixing CuO powder and MoS 2 The powder is fully mixed according to the mol ratio of 4:1-20:1, pressed into tablets, and then annealed for 5-10 min at 700-850 ℃ to obtain the product. The invention carries out MoS on CuO 2 Doping modification, and the photoluminescence intensity of the obtained composite material can reach about 108 times of the photoelectric property of the pure CuO material. The composite material is expected to be a novel material in the field of photoelectric property materials.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectric materials, and particularly relates to a CuO-based composite material with high photoelectric performance.
Background
Semiconductor materials play an increasingly important role in the optoelectronic field. However, high performance single crystal semiconductor materials are costly to fabricate, limiting their wide range of applications. The amorphous nanocrystalline material has low production cost and is suitable for large-scale application.
Copper oxide (CuO) is a p-type semiconductor material, is black, belongs to monoclinic system, is a typical transition metal oxide, and has abundant earth resources and low toxicity. CuO has an optimal band gap (1.4 eV) and a very high light absorption coefficient. However, cuO has a relatively high melting point (1446 ℃) and is decomposed near the melting point. The preparation method of the CuO semiconductor material comprises a magnetron sputtering method, a gel method, a hydrothermal method and the like. The CuO manufactured by the method is in amorphous and nanocrystalline structures, has a plurality of defects and serious carrier recombination, and severely limits the photoelectric application of the CuO. For this reason, it is necessary to develop a doping method of CuO having good photoelectric properties even in amorphous and nanocrystalline states.
Disclosure of Invention
The invention aims to overcome the problems of a CuO semiconductor material and provide a CuO-based composite material with high photoelectric property.
In view of the above, the CuO-based composite material used in the present invention is a composite material comprising CuO powder and MoS 2 The powder is fully mixed according to the mol ratio of 4:1-20:1, pressed into tablets, and then annealed for 5-10 min at 700-850 ℃ to obtain the product.
The CuO/MoS 2 In the composite material, cuO powder and MoS are preferable 2 The molar ratio of the powder is 8:1-15:1.
The CuO/MoS 2 In the composite material, cuO powder and MoS are further preferable 2 The molar ratio of the powder was 8:1.
The tabletting is carried out under the pressure of 12-15 MPa for 8-10 s to form a wafer with the thickness of 0.8-1.2 mm.
The CuO/MoS 2 The composite material is preferably annealed at 800 ℃ for 5 to 10 minutes.
The beneficial effects of the invention are as follows:
1. the invention combines CuO and MoS with different mole ratios 2 A novel semiconductor composite material is formed by a simple mechanical mixing tabletting and annealing method of an annealing furnace. The photoluminescence intensity of the obtained composite material can reach about 108 times of that of a pure CuO material. The doped modification of CuO is illustrated, so that the photoelectric performance of CuO can be effectively improved. The composite material is expected to be a novel material in the field of photoelectric property materials.
2. The CuO semiconductor material adopted by the invention comprises the following components: the light absorption coefficient is high, the chemical property is stable, the earth reserves are rich, the manufacturing cost is low, the synthesis condition is not harsh, the temperature window is wide, and the like, and the light absorption coefficient is very suitable for large-scale application.
Drawings
FIG. 1 is a PL profile of the CuO-based composite prepared in example 1.
Fig. 2 is an XRD pattern of the CuO-based composite material prepared in example 1.
FIG. 3 is a PL profile of the CuO-based composite prepared in example 2.
Fig. 4 is an XRD pattern of the CuO-based composite material prepared in example 2.
Fig. 5 is a PL spectrum of the CuO-based composite material prepared in example 3.
Fig. 6 is an XRD pattern of the CuO-based composite material prepared in example 3.
Fig. 7 is a PL spectrum of the CuO-based composite material prepared in example 4.
Fig. 8 is an XRD pattern of the CuO-based composite material prepared in example 4.
Detailed Description
The invention will be further described with reference to the drawings and specific examples, but the scope of the invention is not limited to these examples.
Example 1
Mixing CuO powder with MoS 2 The powder is fully ground and mixed according to the mol ratio of 10:1, and then a tablet press is used for tabletting under the pressure of 15MPa for 8-10 s, so as to form a disc with the thickness of 0.8-1.2 mm. The obtained wafer is placed on quartz glass and annealed in an annealing furnace at 700 ℃ for 5min to obtain CuO/MoS 2 A composite material.
The material was subjected to Photoluminescence (PL) and X-ray diffraction (XRD) characterization, and the results are shown in fig. 1 and 2. The PL test results of fig. 1 show that the PL peak intensity of the resulting composite material is 4.85 times that of CuO material obtained at the same annealing temperature and time (peak value is increased from original 200 to 970). XRD testing of FIG. 2 shows that significant amounts of CuO and newly formed CuMo are present in the resulting composite material 2 S 3 。
Example 2
Mixing CuO powder with MoS 2 The powder is fully ground and mixed according to the mol ratio of 8:1, and then a tablet press is used for tabletting under the pressure of 15MPa for 8-10 s, so as to form a disc with the thickness of 0.8-1.2 mm. The obtained wafer is placed on quartz glass for annealing in an annealing furnace, the annealing temperature is 800 ℃, the annealing time is 5min, and CuO/MoS is obtained 2 A composite material.
The material was subjected to Photoluminescence (PL) and X-ray diffraction (XRD) characterization, and the results are shown in fig. 3 and 4. The PL test results of fig. 3 show that the PL peak intensity of the resulting composite material is 108.71 times that of CuO material obtained at the same annealing temperature and time (peak value increased from 200 to 21741). XRD testing of FIG. 4 shows that significant amounts of CuO and newly formed CuMoO are present in the resulting composite 4 。
Example 3
Mixing CuO powder with MoS 2 The powder is fully ground and mixed according to the mol ratio of 10:1, and then a tablet press is used for tabletting under the pressure of 15MPa for 8-10 s, so as to form a disc with the thickness of 0.8-1.2 mm. The obtained wafer is placed on quartz glass for annealing in an annealing furnace, the annealing temperature is 800 ℃, the annealing time is 5min, and CuO/MoS is obtained 2 A composite material.
The material was subjected to Photoluminescence (PL) and X-ray diffraction (XRD) characterization, and the results are shown in fig. 5 and 6. The PL test results of fig. 5 show that the PL peak intensity of the obtained composite material is 15.6 times that of CuO material obtained at the same annealing temperature and time (peak value is increased from original 200 to 3120). XRD testing of FIG. 6 shows that significant amounts of CuO and newly formed CuMoO are present in the resulting composite 4 And Cu 6 Mo 5 O 18 。
Example 4
Mixing CuO powder with MoS 2 The powder is fully ground and mixed according to the mol ratio of 15:1, and then a tablet press is used for tabletting under the pressure of 15MPa for 8-10 s, so as to form a disc with the thickness of 1 mm. The obtained wafer is placed on quartz glass for annealing in an annealing furnace, the annealing temperature is 800 ℃, the annealing time is 5min, and CuO/MoS is obtained 2 A composite material.
The material was subjected to Photoluminescence (PL) and X-ray diffraction (XRD) characterization, and the results are shown in fig. 7 and 8. The PL test results of fig. 7 show that the PL peak intensity of the obtained composite material is 47.91 times that of CuO material obtained at the same annealing temperature and time (peak value is increased from original 200 to 9581). XRD testing of fig. 8 shows that there is a significant amount of CuO and newly formed mixed phases of CuMoO in the resulting composite.
Example 5
Mixing CuO powder with MoS 2 The powder is fully ground and mixed according to the mol ratio of 4:1, and then a tablet press is used for tabletting under the pressure of 15MPa for 8-10 s, so as to form a disc with the thickness of 1 mm. The obtained wafer is placed on quartz glass for annealing in an annealing furnace, the annealing temperature is 800 ℃, the annealing time is 10min, and CuO/MoS is obtained 2 A composite material.
Example 6
Mixing CuO powder with MoS 2 The powder is fully ground and mixed according to the mol ratio of 20:1, and then a tablet press is used for tabletting under the pressure of 15MPa for 8-10 s, so as to form a disc with the thickness of 1 mm. The obtained wafer is placed on quartz glass for annealing in an annealing furnace, the annealing temperature is 800 ℃, the annealing time is 5min, and CuO/MoS is obtained 2 A composite material.
Example 7
Mixing CuO powder with MoS 2 The powder is fully ground and mixed according to the mol ratio of 10:1, and then a tablet press is used for tabletting under the pressure of 15MPa for 8-10 s, so as to form a disc with the thickness of 1 mm. The obtained wafer is placed on quartz glass and annealed in an annealing furnace at 850 ℃ for 5min to obtain CuO/MoS 2 A composite material.
Claims (5)
1. A CuO-based composite material with high photoelectric property is characterized in that: the composite material is prepared by mixing CuO powder and MoS 2 The powder is fully mixed according to the mol ratio of 4:1-20:1, pressed into tablets, and then annealed for 5-10 min at 700-850 ℃ to obtain the product.
2. The CuO-based composite having high photoelectric properties according to claim 1, wherein: mixing CuO powder with MoS 2 The powder is fully mixed according to the mol ratio of 8:1-15:1.
3. The CuO-based composite having high photoelectric properties according to claim 1, wherein: mixing CuO powder with MoS 2 The powders were thoroughly mixed in a molar ratio of 8:1.
4. A CuO-based composite material having high photoelectric properties according to any one of claims 1 to 3, wherein: the tabletting is carried out for 8-10 s under the pressure of 12-15 MPa, and the wafer with the thickness of 0.8-1.2 mm is formed.
5. A CuO-based composite having high photoelectric properties according to claim 2 or 3, characterized in that: annealing at 800 deg.c for 5-10 min.
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| EP2115770B1 (en) * | 2007-02-05 | 2018-10-10 | Universidade Nova de Lisboa | ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM p AND n-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS |
| CN109913814B (en) * | 2019-03-28 | 2020-11-17 | 陕西师范大学 | Copper oxide/selenium composite material film |
| CN112110489B (en) * | 2020-09-24 | 2021-09-03 | 西北大学 | Micro-spherical CuS-MoS2Method for preparing composite material |
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