CN113549453A - CuO-based composite material with high photoelectric property - Google Patents

CuO-based composite material with high photoelectric property Download PDF

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Publication number
CN113549453A
CN113549453A CN202110820254.8A CN202110820254A CN113549453A CN 113549453 A CN113549453 A CN 113549453A CN 202110820254 A CN202110820254 A CN 202110820254A CN 113549453 A CN113549453 A CN 113549453A
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cuo
composite material
mos
powder
based composite
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CN113549453B (en
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高斐
张超群
喻智豪
李佳辉
李元瑞
石伯男
刘生忠
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Shaanxi Normal University
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Shaanxi Normal University
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
    • C09K11/68—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals containing chromium, molybdenum or tungsten
    • C09K11/681—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G3/00—Compounds of copper
    • C01G3/02—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G39/00—Compounds of molybdenum
    • C01G39/06—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram

Abstract

The invention discloses a CuO-based composite material with high photoelectric property, which is prepared by mixing CuO powder and MoS2The powder is fully mixed according to the molar ratio of 4: 1-20: 1, then tabletting is carried out, and annealing is carried out for 5-10 min at 700-850 ℃ to obtain the alloy. The invention carries out MoS on CuO2The photoluminescence intensity of the obtained composite material can reach about 108 times of the photoelectric property of the pure CuO material at most by doping modification. The composite material is expected to become a novel material in the field of photoelectric performance materials.

Description

CuO-based composite material with high photoelectric property
Technical Field
The invention belongs to the technical field of semiconductor photoelectric materials, and particularly relates to a CuO-based composite material with high photoelectric property.
Background
Semiconductor materials play an increasingly important role in the field of optoelectronics. However, high performance single crystal semiconductor materials are expensive to fabricate, limiting their wide-scale application. The amorphous nanocrystalline material has low production cost and is suitable for large-scale application.
Copper oxide (CuO) is a p-type semiconductor material, is black, belongs to a monoclinic system, is a typical transition metal oxide, and has rich earth resources and low toxicity. CuO has an optimal band gap (1.4eV), and a very high light absorption coefficient. However, CuO has a high melting point (1446 ℃ C.), and decomposes around the melting point. The CuO semiconductor material can be prepared by magnetron sputtering, gel method, hydrothermal method and the like. CuO prepared by the methods has an amorphous and nanocrystalline structure, has a plurality of defects and serious carrier recombination, and seriously limits the photoelectric application of the CuO. Therefore, there is a need to develop a doping method for CuO having good photoelectric properties even in amorphous and nanocrystalline states.
Disclosure of Invention
The invention aims to overcome the problems of a CuO semiconductor material and provide a CuO-based composite material with high photoelectric property.
Aiming at the purpose, the CuO-based composite material adopted by the invention is prepared by mixing CuO powder and MoS2The powder is fully mixed according to the molar ratio of 4: 1-20: 1, then tabletting is carried out, and annealing is carried out for 5-10 min at 700-850 ℃ to obtain the alloy.
The above-mentioned CuO/MoS2In the composite material, CuO powder and MoS are preferable2The powder molar ratio is 8:1 to 15: 1.
The above-mentioned CuO/MoS2In the composite material, CuO powder and MoS are more preferable2The molar ratio of the powders was 8: 1.
The tablet is kept for 8-10 s under the pressure of 12-15 MPa to form a wafer with the thickness of 0.8-1.2 mm.
The above-mentioned CuO/MoS2Annealing the composite material at 800 ℃ for 5-10 min.
The invention has the following beneficial effects:
1. the invention uses CuO and MoS with different molar ratios2By simple mechanical mixing of the compressed tabletsThe annealing method of the annealing furnace forms a new semiconductor composite material. The photoluminescence intensity of the obtained composite material can reach about 108 times of that of a pure CuO material. The doping modification of CuO can effectively improve the photoelectric property of CuO. The composite material is expected to become a novel material in the field of photoelectric performance materials.
2. The CuO semiconductor material adopted by the invention comprises: high light absorption coefficient, stable chemical property, rich earth reserves, low manufacturing cost, non-harsh synthesis conditions, wide temperature window and the like, and is very suitable for large-scale application.
Drawings
Fig. 1 is a PL spectrum of the CuO-based composite prepared in example 1.
Fig. 2 is an XRD pattern of the CuO-based composite material prepared in example 1.
Fig. 3 is a PL spectrum of the CuO-based composite prepared in example 2.
Fig. 4 is an XRD pattern of the CuO-based composite material prepared in example 2.
Fig. 5 is a PL spectrum of the CuO-based composite prepared in example 3.
Fig. 6 is an XRD pattern of the CuO-based composite material prepared in example 3.
Fig. 7 is a PL spectrum of the CuO-based composite prepared in example 4.
Fig. 8 is an XRD pattern of the CuO-based composite material prepared in example 4.
Detailed Description
The invention will be further described with reference to the following figures and specific examples, but the scope of the invention is not limited to these examples.
Example 1
Mixing CuO powder with MoS2Fully grinding and mixing the powder according to a molar ratio of 10:1, and then tabletting by using a tabletting machine under the pressure of 15MPa for 8-10 s to form a wafer with the thickness of 0.8-1.2 mm. The obtained wafer is placed on quartz glass and annealed in an annealing furnace at the annealing temperature of 700 ℃ for 5min to obtain CuO/MoS2A composite material.
The material is characterized by Photoluminescence (PL) and X-ray diffraction (XRD), and the junction is formedThe results are shown in fig. 1 and 2. The PL test results in fig. 1 show that the PL peak intensity of the resulting composite is 4.85 times (the peak value increases from 200 to 970) that of the CuO material obtained at the same annealing temperature and time. XRD testing of FIG. 2 shows that a large amount of CuO and newly formed CuMo exist in the obtained composite material2S3。
Example 2
Mixing CuO powder with MoS2Fully grinding and mixing the powder according to the molar ratio of 8:1, and then tabletting by using a tabletting machine under the pressure of 15MPa for 8-10 s to form a wafer with the thickness of 0.8-1.2 mm. The obtained wafer is placed on quartz glass and annealed in an annealing furnace at the annealing temperature of 800 ℃ for 5min to obtain CuO/MoS2A composite material.
Photoluminescence (PL) and X-ray diffraction (XRD) characterization was performed on this material, and the results are shown in fig. 3 and 4. The PL test results in fig. 3 show that the PL peak intensity of the resulting composite is 108.71 times greater (the peak value increases from 200 to 21741) than that of CuO material obtained at the same annealing temperature and time. XRD testing of FIG. 4 shows that the resulting composite material contains a large amount of CuO and newly formed CuMoO4。
Example 3
Mixing CuO powder with MoS2Fully grinding and mixing the powder according to a molar ratio of 10:1, and then tabletting by using a tabletting machine under the pressure of 15MPa for 8-10 s to form a wafer with the thickness of 0.8-1.2 mm. The obtained wafer is placed on quartz glass and annealed in an annealing furnace at the annealing temperature of 800 ℃ for 5min to obtain CuO/MoS2A composite material.
Photoluminescence (PL) and X-ray diffraction (XRD) characterization was performed on this material, and the results are shown in fig. 5 and 6. The PL test results of fig. 5 show that the PL peak intensity of the resulting composite is 15.6 times higher (peak increased from original 200 to 3120) than that of CuO material obtained at the same annealing temperature and time. XRD testing of FIG. 6 shows that the resulting composite material contains a large amount of CuO and newly formed CuMoO4And Cu6Mo5O18。
Example 4
Mixing CuO powder with MoS2The powder is added according to the molar ratio of 15:1Fully grinding and mixing, and then tabletting by using a tabletting machine under the pressure of 15MPa for 8-10 s to form a wafer with the thickness of 1 mm. The obtained wafer is placed on quartz glass and annealed in an annealing furnace at the annealing temperature of 800 ℃ for 5min to obtain CuO/MoS2A composite material.
Photoluminescence (PL) and X-ray diffraction (XRD) characterization was performed on this material, and the results are shown in fig. 7 and 8. The PL test results in fig. 7 show that the PL peak intensity of the resulting composite is 47.91 times greater (peak increased from original 200 to 9581) than the CuO material obtained at the same annealing temperature and time. The XRD testing of fig. 8 shows that a large amount of CuO and newly formed mixed phase of CuMoO are present in the resulting composite.
Example 5
Mixing CuO powder with MoS2Fully grinding and mixing the powder according to a molar ratio of 4:1, and then tabletting by using a tabletting machine under the pressure of 15MPa for 8-10 s to form a wafer with the thickness of 1 mm. The obtained wafer is placed on quartz glass and annealed in an annealing furnace at the annealing temperature of 800 ℃ for 10min to obtain CuO/MoS2A composite material.
Example 6
Mixing CuO powder with MoS2Fully grinding and mixing the powder according to a molar ratio of 20:1, and then tabletting by using a tabletting machine under the pressure of 15MPa for 8-10 s to form a wafer with the thickness of 1 mm. The obtained wafer is placed on quartz glass and annealed in an annealing furnace at the annealing temperature of 800 ℃ for 5min to obtain CuO/MoS2A composite material.
Example 7
Mixing CuO powder with MoS2Fully grinding and mixing the powder according to a molar ratio of 10:1, and tabletting by using a tabletting machine under the pressure of 15MPa for 8-10 s to form a wafer with the thickness of 1 mm. The obtained wafer is placed on quartz glass and annealed in an annealing furnace at the temperature of 850 ℃ for 5min to obtain CuO/MoS2A composite material.

Claims (5)

1. A CuO-based composite material with high photoelectric property is characterized in that: the composite material is prepared by mixing CuO powder and MoS2Powder ofFully mixing the raw materials according to a molar ratio of 4: 1-20: 1, tabletting, and annealing at 700-850 ℃ for 5-10 min to obtain the finished product.
2. The CuO-based composite material with high photoelectric properties of claim 1, wherein: mixing CuO powder with MoS2The powders are fully mixed according to a molar ratio of 8: 1-15: 1.
3. The CuO-based composite material with high photoelectric properties of claim 1, wherein: mixing CuO powder with MoS2The powders were mixed well in a molar ratio of 8: 1.
4. The CuO-based composite material with high photoelectric properties as claimed in any one of claims 1 to 3, wherein: the tabletting is kept for 8-10 s under the pressure of 12-15 MPa to form a wafer with the thickness of 0.8-1.2 mm.
5. CuO/MoS with high photoelectric properties according to claim 2 or 32A composite material characterized by: annealing at 800 ℃ for 5-10 min.
CN202110820254.8A 2021-07-20 2021-07-20 CuO-based composite material with high photoelectric property Active CN113549453B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100090216A1 (en) * 2007-02-05 2010-04-15 Ferrao De Paiva Martins Rodrigo ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM p AND n-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS
CN109913814A (en) * 2019-03-28 2019-06-21 陕西师范大学 A kind of copper oxide/selenium composite material film
CN112110489A (en) * 2020-09-24 2020-12-22 西北大学 Micro-spherical CuS-MoS2Method for preparing composite material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100090216A1 (en) * 2007-02-05 2010-04-15 Ferrao De Paiva Martins Rodrigo ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM p AND n-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS
CN109913814A (en) * 2019-03-28 2019-06-21 陕西师范大学 A kind of copper oxide/selenium composite material film
CN112110489A (en) * 2020-09-24 2020-12-22 西北大学 Micro-spherical CuS-MoS2Method for preparing composite material

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KE ZHANG ET AL.: "A Flexible p-CuO/n-MoS2 Heterojunction Photodetector with Enhanced Photoresponse by Piezo-phototronic Effect", 《MATERIALS HORIZONS》 *

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