CN113508577B - 像素阵列及相关图像传感器、指纹检测芯片及电子装置 - Google Patents
像素阵列及相关图像传感器、指纹检测芯片及电子装置 Download PDFInfo
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- CN113508577B CN113508577B CN202180001655.9A CN202180001655A CN113508577B CN 113508577 B CN113508577 B CN 113508577B CN 202180001655 A CN202180001655 A CN 202180001655A CN 113508577 B CN113508577 B CN 113508577B
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- Prior art keywords
- transistor
- operational amplifier
- pixel array
- coupled
- photodiode
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- 238000001514 detection method Methods 0.000 title claims abstract description 19
- 239000003990 capacitor Substances 0.000 claims description 16
- 238000005070 sampling Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 11
- 230000000295 complement effect Effects 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000001629 suppression Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 102000002274 Matrix Metalloproteinases Human genes 0.000 description 1
- 108010000684 Matrix Metalloproteinases Proteins 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2021/098080 WO2022252172A1 (zh) | 2021-06-03 | 2021-06-03 | 像素阵列及相关图像传感器、指纹检测芯片及电子装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113508577A CN113508577A (zh) | 2021-10-15 |
CN113508577B true CN113508577B (zh) | 2024-03-05 |
Family
ID=78008206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202180001655.9A Active CN113508577B (zh) | 2021-06-03 | 2021-06-03 | 像素阵列及相关图像传感器、指纹检测芯片及电子装置 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN113508577B (zh) |
WO (1) | WO2022252172A1 (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011124786A (ja) * | 2009-12-10 | 2011-06-23 | Nikon Corp | 固体撮像素子 |
CN210429816U (zh) * | 2019-08-27 | 2020-04-28 | 深圳市汇顶科技股份有限公司 | 图像传感器的半导体结构、芯片及电子装置 |
CN111263089A (zh) * | 2020-05-06 | 2020-06-09 | 深圳市汇顶科技股份有限公司 | 像素、图像传感器及电子装置 |
CN111277774A (zh) * | 2020-05-06 | 2020-06-12 | 深圳市汇顶科技股份有限公司 | 像素、图像传感器及电子装置 |
CN211698994U (zh) * | 2019-08-16 | 2020-10-16 | 神盾股份有限公司 | 指纹感测装置 |
WO2020223847A1 (zh) * | 2019-05-05 | 2020-11-12 | 深圳市汇顶科技股份有限公司 | 图像传感器及相关芯片、图像传感器操作方法及手持装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4086514B2 (ja) * | 2002-02-13 | 2008-05-14 | キヤノン株式会社 | 光電変換装置及び撮像装置 |
US7176438B2 (en) * | 2003-04-11 | 2007-02-13 | Canesta, Inc. | Method and system to differentially enhance sensor dynamic range using enhanced common mode reset |
CN101064787B (zh) * | 2006-04-29 | 2010-08-11 | 格科微电子(上海)有限公司 | 一种cmos图像传感器像素 |
US10791294B2 (en) * | 2018-12-20 | 2020-09-29 | Semiconductor Components Industries, Llc | Image sensors having capacitively coupled pixels |
-
2021
- 2021-06-03 CN CN202180001655.9A patent/CN113508577B/zh active Active
- 2021-06-03 WO PCT/CN2021/098080 patent/WO2022252172A1/zh active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011124786A (ja) * | 2009-12-10 | 2011-06-23 | Nikon Corp | 固体撮像素子 |
WO2020223847A1 (zh) * | 2019-05-05 | 2020-11-12 | 深圳市汇顶科技股份有限公司 | 图像传感器及相关芯片、图像传感器操作方法及手持装置 |
CN211698994U (zh) * | 2019-08-16 | 2020-10-16 | 神盾股份有限公司 | 指纹感测装置 |
CN210429816U (zh) * | 2019-08-27 | 2020-04-28 | 深圳市汇顶科技股份有限公司 | 图像传感器的半导体结构、芯片及电子装置 |
CN111263089A (zh) * | 2020-05-06 | 2020-06-09 | 深圳市汇顶科技股份有限公司 | 像素、图像传感器及电子装置 |
CN111277774A (zh) * | 2020-05-06 | 2020-06-12 | 深圳市汇顶科技股份有限公司 | 像素、图像传感器及电子装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2022252172A1 (zh) | 2022-12-08 |
CN113508577A (zh) | 2021-10-15 |
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Effective date of registration: 20220124 Address after: 17-00, No. 16, Goliath wharf, Raffles square, Singapore Applicant after: Dick Innovation Technology Co.,Ltd. Address before: 35th floor, No.66, Section 1, Zhongxiao West Road, Zhongzheng District, Taipei, China Applicant before: Yaoxin Technology Co.,Ltd. |
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Effective date of registration: 20230717 Address after: 51 Science Park Road, Aries Tower # 04-22, Singapore Applicant after: Huiding Technology Private Ltd. Address before: 16 # 17-00, Godfrey Pier, Raffles Place Applicant before: Dick Innovation Technology Co.,Ltd. |
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