CN113502186B - 一种基于csp封装技术的led芯片切割液及其使用方法 - Google Patents
一种基于csp封装技术的led芯片切割液及其使用方法 Download PDFInfo
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Abstract
本发明提供一种基于CSP封装技术的LED芯片切割液及其使用方法。该芯片切割液包括重量配比如下的各组分:3‑9份含苯磺酸基团化合物;5‑10份天然植物提取物;1.5‑4份聚氧乙烯醚类化合物;1.5‑4份氨基酸类化合物;6‑9份醇醚类化合物;50‑80份纯水。本发明芯片切割液中的含苯磺酸基团化合物能够将CSP表面的硅树脂催化裂解成小分子硅化合物,裂解成的小分子硅化合物具有水溶性,可以被芯片切割液水溶后带走,解决了芯片表面硅树脂在划片刀高速切割过程受热软化而粘附在划片刀与芯片的表面,以及脏污、崩片等造成的芯片良率低问题;含有苯磺酸基团的化合物可与天然植物提取物协同作用,有利于吸附、溶解切割后的小分子硅化合物。
Description
技术领域
本发明涉及一种基于CSP封装技术的LED芯片切割液及其使用方法,属于光电子器件的表面精密加工领域。
背景技术
现有的芯片级封装(Chip Scale Package,CSP)LED芯片切割技术,通常使用纯水或在纯水中加入表面活性剂或在纯水中加入市售的常规芯片切割液作为切割冷却液,然而由于CSP封装的LED芯片具有类似三明治的结构,即芯片由三层组成,其第一层由透明的硅树脂组成,切割过程必然要对这层硅树脂进行切割,划片刀与硅树脂剧烈摩擦产生的热量会使硅树脂从固态融化成具有粘性的熔融态,这种状态的硅树脂会将划片刀表面的金刚石颗粒包裹住,使得切削能力下降,导致切割出的芯片侧壁和背面经常发生严重的崩边和崩角问题。此外,融化的硅树脂被划片刀甩落芯片切割刀周边区域,直接与芯片表面形成化学吸附,这使得后续的二流体清洗也无法将这些残渣清除干净。
发明内容
本发明的目的在于提供一种基于CSP封装技术的LED芯片切割液,该切割液含有苯磺酸基团化合物的切割液,能够将CSP封装的LED芯片表面的硅树脂催化裂解成小分子硅化合物,裂解成的硅化合物具有水溶性,可以被芯片切割液水溶带走,解决了芯片表面硅树脂在划片刀高速切割过程受热软化而粘附在划片刀与芯片的表面,解决了脏污、崩片等问题造成的良率低问题。
为了解决上述技术问题,本发明采用的技术方案:一种基于CSP封装技术的LED芯片切割液,包括重量配比如下的各组分:
所述含苯磺酸基团化合物含有式I、II、III中的一种化合物,同时含有式IV化合物,
其中:R1=CnH2n+1,n为整数,n≥12;
其中:x和y为整数,x≥2,1≤y≤18,b为O或CH2;
所述含苯磺酸基团化合物优选的重量配比为5-9份。
进一步地,所述基于CSP封装技术的LED芯片切割液还含有天然植物提取物5-10份;
所述天然植物提取物的结构式如下:
所述天然植物提取物优选的重量配比为6-9份。
进一步地,所述聚氧乙烯醚类化合物选自脂肪胺聚氧乙烯醚、脂肪醇聚氧乙烯醚、苯乙基酚聚氧乙烯醚、2,4,7,9-四甲基-5-癸炔-4,7-二醇聚氧乙烯醚和2,5,8,11-四甲基-6-十二碳炔-5,8-二醇聚氧乙烯醚中的一种;优选的所述聚氧乙烯醚类化合物为脂肪胺聚氧乙烯醚;所述聚氧乙烯醚类化合物优选的重量配比为1.5-3份。
进一步地,所述氨基酸类化合物选自二乙烯三胺五乙酸、乙二醇二***和乙二胺四乙酸二胺四乙酸中的一种;优选的所述氨基酸类化合物为二乙烯三胺五乙酸;所述氨基酸类化合物优选的重量配比为1.5-3份。
进一步地,所述醇醚类化合物选自丙三醇甲醚、丙三醇***、丙三醇丁醚、丙三醇三甲醚、二丙二醇甲醚、二丙二醇***和二丙二醇丙醚中的一种;优选的所述醇醚类化合物为丙三醇甲醚;所述醇醚类化合物优选的重量配比为6-8份。
进一步地,所述纯水优选超纯水。
本发明的另一个目的在于还公开了芯片切割液的使用方法,包括以下步骤:将50-120mL芯片切割液以500-10000rpm的速度旋转60-120秒,使芯片切割液旋涂在芯片表面,静置5-10min后进行切割,切割时将切割液与超纯水按照1:1000-1:2000的质量比混合,喷淋在芯片表面。
本发明芯片切割液配方科学、合理,使用方法简单、易行,与现有技术相比较具有以下优点:
(1)含有苯磺酸基团的化合物,尤其是同时含有化合物式IV及式I、II、III中的一种,能够将CSP表面的硅树脂催化裂解成小分子硅化合物,裂解成的硅化合物具有水溶性,可以被芯片切割液水溶带走,解决了芯片表面硅树脂在划片刀高速切割过程受热软化而粘附在划片刀与芯片的表面,解决了脏污、崩片等问题造成的良率低问题;
(2)含有苯磺酸基团的化合物可与天然植物提取物协同作用,含有苯磺酸基团的化合物中的羧基与天然植物提取物中的氨基反应生成酰胺,酰胺有利于吸附、溶解切割后的小分子硅化合物。
附图说明
图1为使用实施例1芯片切割液切割后放大50倍金相显微镜观察切割后的芯片表面。
图2为使用对比例1芯片切割液切割后放大50倍金相显微镜观察切割后的芯片表面。
具体实施方式
下面通过具体实施例对本发明作进一步说明,但本发明并不受以下实施例所限定。
实施例1
分别称取重量配比的如下的各组分:2份含苯磺酸基团化合物式I(n=12),3份含苯磺酸基团化合物式IV(x=2,y=1,b=O),6份天然植物提取物,1.5份脂肪胺聚氧乙烯醚,1.5份聚醚改性硅氧烷,1.5份二乙烯三胺五乙酸,6份丙三醇甲醚,60份超纯水。
实施例1芯片切割液的制备方法:将60份超纯水加入反应釜中,开动搅拌,转速500rpm;加入2份含苯磺酸基团化合物式I,3份含苯磺酸基团化合物式IV,搅拌3分钟;加入6份天然植物提取物,搅拌5分钟;加入1.5份脂肪胺聚氧乙烯醚,搅拌5分钟;加入1.5份聚醚改性硅氧烷,搅拌5分钟;加入1.5份二乙烯三胺五乙酸,搅拌5分钟;加入6份丙三醇甲醚,搅拌至透明。
实施例2-12芯片切割液的制备方法与实施例1相同,组成及重量配比见表1。
表1
对比例1-12的配方和制备方法与实施例1-12相同,区别在于对比例1-2、5-6、9-10只含I、II、III或IV含苯磺酸基团化合物中的一种,对比例3、7、11不含苯磺酸基团化合物,对比例4、8、12未添加含苯磺酸基团化合物和天然植物提取物,重量配比和组分见表2。
表2
一种基于CSP封装技术的LED芯片切割液,使用方法:将50-120mL芯片切割液以500-10000rpm的速度旋转60-120秒,使芯片切割液旋涂在芯片表面;静置5-10min后进行切割,切割时将切割液与超纯水按照1:1000-1:2000的质量比混合,喷淋在芯片表面。
实施例1-12和对比例1-12芯片切割液的使用方法见表3,使用对比例1-12切割液进行切割时未使用喷淋方式,未将切割液和超纯水混合喷淋在芯片表面。
表3
性能测试I:颗粒残留检测
以下实施例的效果检测均采用以下方法:以Disco芯片切割机切割4寸CSP封装LED芯片,以金相显微镜观察切割后的芯片表面是否有颗粒残留;取切割后的废水样品,以ICP检测其中金属离子含量。实施例1-12与对比例1-12的硅树脂残留结果见表4。
表4
从表4中能够明显看出,使用同时含有含苯磺酸基团化合物式I或II或III中的一种和IV的实施例1-12芯片切割液,芯片表面没有残留颗粒,且金属离子含量<1ppm;与实施例1-12相比,应用对比例1-12芯片切割液后,芯片表面有较多颗粒残留,且金属离子含量为10-11ppm,远高于实施例1-12,达不到环保排放的要求,不符合实际应用。
切割后有无颗粒残留对比图如图1和图2所示,图1是实施例1中切割液切割后金相显微镜观察切割后的芯片表面,图中可见芯片表面干净无硅树脂残留;图2是对比例1中切割液切割后的芯片表面,图2中有硅树脂残留。
Claims (7)
2.根据权利要求1所述的LED芯片切割液,其特征在于:所述天然植物提取物的重量配比为6-9份。
3.根据权利要求1所述的LED芯片切割液,其特征在于:所述聚氧乙烯醚类化合物选自脂肪胺聚氧乙烯醚、脂肪醇聚氧乙烯醚、苯乙基酚聚氧乙烯醚、2,4,7,9-四甲基-5-癸炔-4,7-二醇聚氧乙烯醚和2,5,8,11-四甲基-6-十二碳炔-5,8-二醇聚氧乙烯醚中的一种;所述聚氧乙烯醚类化合物的重量配比为1.5-3份。
4.根据权利要求1所述的LED芯片切割液,其特征在于:所述氨基酸类化合物选自二乙烯三胺五乙酸和乙二胺四乙酸中的一种;所述氨基酸类化合物的重量配比为1.5-3份。
5.根据权利要求1所述的LED芯片切割液,其特征在于:所述醇醚类化合物选自丙三醇甲醚、丙三醇***、丙三醇丁醚、丙三醇三甲醚、二丙二醇甲醚、二丙二醇***和二丙二醇丙醚中的一种;所述醇醚类化合物的重量配比为6-8份。
6.根据权利要求1-5任一项所述的基于CSP封装技术的LED芯片切割液的使用方法,其特征在于:将50-120mL芯片切割液以500-10000rpm的速度旋转60-120秒,使芯片切割液旋涂在芯片表面;静置5-10min后进行切割,切割时将切割液与纯水按照1:1000-1:2000的质量比混合,喷淋在芯片表面。
7.根据权利要求1-5任一项所述的基于CSP封装技术的LED芯片切割液用于切割LED芯片的用途。
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