CN113490592B - 接合体和光源装置 - Google Patents
接合体和光源装置 Download PDFInfo
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 99
- 229910052751 metal Inorganic materials 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 72
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 48
- 239000002131 composite material Substances 0.000 claims abstract description 41
- 229910000679 solder Inorganic materials 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000009413 insulation Methods 0.000 claims abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 239000011135 tin Substances 0.000 description 13
- 239000010949 copper Substances 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000013507 mapping Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
本发明的接合体具有:有金属层(9)位于具有绝缘性的基材(7)的第一主面(7a)上的基板(1);金属接合层(3);金属构件(5)。金属接合层(3)位于基板(1)的金属层(9)与金属构件(5)之间。金属接合层(3)具有镍层(11)、焊料层(13)、镍与焊料混合的复合层(15)。镍层(11)、复合层(15)和焊料层(13),从金属层(9)侧朝向金属构件(5)侧按此顺序定位。复合层(15)中的镍,从镍层(11)起在厚度方向上延伸而形成凹凸状。
Description
技术领域
本发明涉及接合体和光源装置。
背景技术
近年来,LED(light emitting diode)被用于汽车的前大灯。使用LED的光源装置要求有高散热性。使用LED的光源装置中,使用在陶瓷制的基板上接合有铝制的金属构件(散热构件)的接合体作为配线基板(例如,参照专利文献1)。
在先技术文献
专利文献
国际公开2017/188237号公报
发明内容
本发明的接合体具有:金属层位于具有绝缘性的基材的第一主面上的基板;金属接合层;金属构件。所述金属接合层位于所述基板的所述金属层与所述金属构件之间。所述金属接合层具有镍层、焊料层、镍和焊料混合而成的复合层。所述镍层、所述复合层和所述焊料层,按照从所述金属层侧朝向所述金属构件侧这一顺序定位。所述复合层中的所述镍,从所述镍层起沿厚度方向延伸而形成凹凸状。
本发明的光源装置具备上述的接合体、和设于该接合体的基板上的发光元件。
附图说明
图1是作为实施方式的一例展示的接合体的剖视图。
图2是图1的P1部的放大图。
图3是接合体的相当于图2所示的P1部这部分的扫描型电子显微镜照片。
图4是图3的部分的元素(Cu)映射照片。
图5是图3的部分的元素(Sn)映射照片。
图6是图3的部分的元素(Ni)映射照片。
图7是图3的部分的元素(Al)映射照片。
图8是图3的部分的元素(P)映射照片。
图9是图3的部分的元素(Pd)映射照片。
图10是表示根据元素映射照片测量复合层的厚度的方法的示意图。
图11是作为实施方式的一例展示的光源装置的剖视图。
具体实施方式
专利文献1所公开的接合体,是陶瓷制的基板与铝制的金属构件(散热构件)经由焊料等的金属接合层被接合而成的。于是,近年来,上述这样的接合体,要求有更高的耐久性。因此本发明其目的在于,提供可以抑制基板与散热构件之间的接合强度的降低的接合体。
以下,对于实施方式的接合体,以图1~图10为基础进行说明。还有,本发明的一个方式,不限定于以下记述的特定的实施方式。本发明的一个方式,只要顺应由附带的专利请求范围定义的综合的发明的概念性的精神或范围,即可包括各种方式。
图1是作为实施方式的一例展示的接合体的剖视图。图2是图1的P1部的放大图。图3是接合体的相当于图2所示的P1部这部分的扫描型电子显微镜照片。图4是图3的部分的元素(Cu)映射照片。图5是图3的部分的元素(Sn)映射照片。图6是图3的部分的元素(Ni)映射照片。图7是图3的部分的元素(Al)映射照片。图8是图3的部分的元素(P)映射照片。图9是图3的部分的元素(Pd)映射照片。图4~图9所示的元素映射照片,能够使用扫描型电子显微镜上装配的EDS(Energy Dispersive X-ray Spectroscopy)分析装置取得。
作为实施方式的一例所示的接合体A具有:基板1、金属接合层3和金属构件5。金属接合层3位于基板1与金属构件5之间。基板1具有绝缘性的基材7。基板1具有设于基材7的一个主面7a上的金属层9。基材7和金属层9被接合。在此,有将主面7a表述为第一主面7a的情况。
金属接合层3具有镍层11、焊料层13和复合层15。复合层15处于镍和焊料混合在一起的状态。接合体A中,从基材7的金属层9侧朝向金属构件5侧,镍层11、复合层15和焊料层13按这一顺序定位。另外,在复合层15中,镍从镍层11起沿厚度方向延伸而形成凹凸状。满足这一结构的接合体A,基板1与金属构件5的接合性优异。
这种情况下,复合层15也可以以覆盖形成于金属层9的表面的镍层11的整个面的方式设置。另外,作为焊料层13,也可以含有铅(Pb),但从地球环境的观点出发,如图5所示,也可以不含铅,而以锡(Sn)作为主成分。
接合体A,如上述,在复合层15内,具有镍和焊料混合而成的部分。如图6所示的镍的元素映射照片也表明,复合层15中所含的镍的浓度,比镍层11中的镍的浓度低。这种情况下,镍的浓度的差别,能够根据元素映射照片中颜色的浓淡来确认。
另外,复合层15中所含的镍也可以以微粒的状态被包含。这种情况下,复合层15中所含的镍为微粒的状态,是基于元素映射照片进行的判定。即,在元素映射照片中,元素(镍)有以点状存在的方式可见的情况。总之,在复合层15中,镍的微粒的隙间中存在焊料(这情况下为Sn)。换言之,复合层15中,镍的微粒和焊料(Sn)的微粒混杂存在。其结果是,位于镍层11与焊料层13之间的复合层15,机械强度优异。
另外,构成接合体A的金属接合层3,如图7所示,可以还含有铝,该铝以层状分布于复合层15与焊料层13之间。另外,在接合体A中,也还可以含有磷和钯之中至少一种金属成分(参照图8、图9)。磷和钯之中至少一种,与复合层15的其他区域相比在铝的位置以高浓度含有。
在此实施方式的情况下,铝在复合层15的下侧(焊料层13侧)以水平单列分布。铝在复合层15的下侧(焊料层13侧)以水平单列呈层状分布时,因为复合层15与焊料层13的接合强度提高,进而接合体A的接合强度提高。其结果是,满足这样结构的接合体A,室温(25℃)与高温环境下之间的耐热冲击性优异。在此,所谓高温,是焊料的熔融温度以上(250℃以上)的温度。
作为复合层15的厚度(平均的厚度),例如,为1μm以上且10μm以下,特别是也可以在3μm以上且6μm以下。复合层15的平均的厚度,例如由以下的方法求得。图10是表示由元素映射照片测量复合层的厚度的方法的示意图。首先,准备图6所示这样的镍的元素映射照片。其次,在此照片的复合层15的区域中,在多处求得有镍存在而形成凹凸的部分的厚度。在此,所谓复合层15中有镍存在而形成凹凸的状态,是在EDS分析中,设镍层11的镍的特征X射线的强度为100%时,显示20%以上的特征X射线的强度的区域。在EDS分析中,特征X射线的强度根据颜色的差异而显现。接着,根据各处的复合层15的厚度t1、t2…t5求得其平均值。图10中,以大约5μm的间隔进行测量。图10中,各处的复合层15的厚度作为符号t1、t2…t5显示。复合层15的平均的厚度可以在多处进行上述的测量,由其平均值而求得。
在本发明中,层状分布于复合层15与焊料层13之间的铝层,是指具有0.1μm以上的厚度的部分,在图7所示这样的映射照片中被确认为层状的部分。作为铝层的厚度的上限值,例如是1.5μm。还有,位于焊料层13与复合层15之间的铝层,不限于是连续的,如图7所示,也可以部分地介入有例如焊料作为其他的成分。
在此,基材7从绝缘性高,另外,从机械强度高这样的观点出发,作为材质可列举陶瓷。具体来说,可列举氮化硅、氮化铝和氧化铝。如果是这些陶瓷的情况,则从与由半导体材料形成的发光元件的热膨胀系数接近的观点出发,热膨胀系数可以为3×10-6/K以上且8×10-6/K以下。作为形成于基材7的金属层9的材料,可以是以贱金属为主成分。例如,金属层9的材料,铜(Cu)、镍(Ni)等是适合的。关于金属层9的材料,其中,从热导率和导电性高的观点出发,以铜(Cu)为宜。金属构件5承担着散热构件的作用。作为金属构件5的材料,可以是铝或以铝为主成分的合金。金属构件5的材料,也可以是以热导率优异的铜为主成分,但从耐腐蚀性这一点出发,可以是以铝为主成分的材料。焊料以锡(Sn)为主成分,其中也可以含Bi、Cu、Ni、Ge。
上述的接合体A,例如,作为构成LED用的光源装置的配线基板有用。图11是作为实施方式的一例展示的光源装置的剖视图。光源装置B具备接合体A和发光元件21。发光元件21被安装于构成接合体A的基板1之上。这种情况下,基板1在基材7的第二主面7b上具有导体25。发光元件21连接于导体25。作为导体25的材料,可列举以铜作为金属化层,在其表面,含有从镍、金、锡等之中选择的至少一种金属。光源装置B中,作为配线基板而使用上述的接合体A,因此,基板1与金属构件5之间的接合性高。如此能够得到耐久性高的光源装置B。
接下来,实际制作接合体A和光源装置B,进行评价。首先,准备基板1。基板1中,在基材7的第一主面7a上具有金属层9。作为基材7使用氮化硅质陶瓷。金属层9使用形成有铜作为金属化层的。这种情况下,通过电镀在金属层9上形成镍层11。镍层11的形成使用磷酸系的镍镀液。另外,形成镍层11时,以钯进行活性化处理。其后,在镍层11的表面按顺序形成金的镀膜和锡的镀膜。如此制作基板1。
另外,准备金属构件5。对于金属构件5,由超音波焊接在其一个表面上形成焊料层13。焊料层13使用以锡(Sn)为主成分,其中含有Bi、Cu、Ni、Ge的材料。
接着,接合基板1和金属构件5。以使形成于基板1的锡的镀膜和形成于金属构件5的焊料层13重叠进行加压的方式进行了接合。接合中,将金属构件5置于热板上,从其上侧重叠基板1而进行。这时,作为条件,从基板1至金属构件5之间,以使金属构件5侧高,基板1侧低的方式形成温度梯度。热板的设定温度为260℃。如此得到的接合体A中,形成有具有图1~图9所示构造的金属接合层3。即,接合体A中,在基板1与金属构件5之间具有金属接合层3。金属接合层3在镍层11与焊料层13之间具有镍和焊料混合而成的复合层15。另外,作为金属构件5的成分的铝扩散至金属接合层3中,以层状进行分布。此外,磷和钯,与其他区域相比,在铝以层状存在的部分以高浓度被含有。将如此得到的接合体A用于光源装置的基板时,能够得到长期(连续10000小时)的驱动下也可耐受的光源装置。
符号说明
A…接合体
B…光源装置
1…基板
3…金属接合层
5…金属构件
7…基材
9…金属层
11…镍层
13…焊料层
15…复合层
21…发光元件
25…导体
Claims (4)
1.一种接合体,其具有:基板,所述基板中,金属层位于具有绝缘性的基材的第一主面上;金属接合层;金属构件,
所述金属接合层位于所述基板的所述金属层和所述金属构件之间,
所述金属接合层具有镍层、焊料层和镍与焊料混合而成的复合层,
所述镍层、所述复合层和所述焊料层,从所述金属层侧朝向所述金属构件侧按此顺序定位置,
所述复合层中的所述镍从所述镍层起在厚度方向上延伸而形成凹凸状,
在所述复合层中,所述镍的微粒和所述焊料的微粒混杂存在,
所述金属接合层还含有铝,该铝在所述复合层与所述焊料层之间以层状进行分布。
2.根据权利要求1所述的接合体,其中,所述金属接合层还含有磷,该磷被包含在所述铝的位置。
3.根据权利要求1或2所述的接合体,其中,所述金属接合层还含有钯,该钯被包含在所述铝的位置。
4.一种光源装置,其具备权利要求1至3之中任一项所述的接合体和设于该接合体的基板之上的发光元件。
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