CN113471302B - 一种带内外电位保护环的肖特基二极管 - Google Patents
一种带内外电位保护环的肖特基二极管 Download PDFInfo
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- CN113471302B CN113471302B CN202110777557.6A CN202110777557A CN113471302B CN 113471302 B CN113471302 B CN 113471302B CN 202110777557 A CN202110777557 A CN 202110777557A CN 113471302 B CN113471302 B CN 113471302B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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CN202110777557.6A CN113471302B (zh) | 2021-07-09 | 2021-07-09 | 一种带内外电位保护环的肖特基二极管 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006245237A (ja) * | 2005-03-02 | 2006-09-14 | Matsushita Electric Ind Co Ltd | ショットキバリアダイオードおよびその製造方法 |
CN101350369A (zh) * | 2007-07-22 | 2009-01-21 | 万国半导体股份有限公司 | 底部阳极肖特基二极管的结构和制造方法 |
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JP4088852B2 (ja) * | 1998-09-21 | 2008-05-21 | 関西電力株式会社 | SiCショットキーダイオード |
JP2001168351A (ja) * | 1999-12-13 | 2001-06-22 | Fuji Electric Co Ltd | 半導体装置 |
FR2832547A1 (fr) * | 2001-11-21 | 2003-05-23 | St Microelectronics Sa | Procede de realisation d'une diode schottky sur substrat de carbure de silicium |
JP4119148B2 (ja) * | 2002-04-02 | 2008-07-16 | 株式会社東芝 | ダイオード |
JP5370985B2 (ja) * | 2008-09-22 | 2013-12-18 | 日本インター株式会社 | Jbsの製造方法 |
FR2963985A1 (fr) * | 2010-08-18 | 2012-02-24 | St Microelectronics Tours Sas | Diode schottky verticale au nitrure de gallium |
CN102354704B (zh) * | 2011-11-04 | 2014-03-05 | 丹东安顺微电子有限公司 | 具有高反向阻断性能肖特基二极管制造方法 |
FR2985373B1 (fr) * | 2012-01-04 | 2014-01-24 | Commissariat Energie Atomique | Structure semiconductrice, dispositif comportant une telle structure et procede de fabrication d'une structure semiconductrice |
CN103346083B (zh) * | 2013-07-09 | 2016-10-05 | 苏州捷芯威半导体有限公司 | 氮化镓肖特基二极管及其制造方法 |
CN103730430B (zh) * | 2013-12-16 | 2016-06-15 | 启东吉莱电子有限公司 | 一种台面大功率半导体器件多层复合膜钝化结构及其制备工艺 |
CN108346688B (zh) * | 2018-01-25 | 2021-03-02 | 中国科学院微电子研究所 | 具有CSL输运层的SiC沟槽结势垒肖特基二极管及其制作方法 |
CN112289848A (zh) * | 2020-10-29 | 2021-01-29 | 沈阳工业大学 | 一种低功耗高性能超级结jbs二极管及其制造方法 |
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JP2006245237A (ja) * | 2005-03-02 | 2006-09-14 | Matsushita Electric Ind Co Ltd | ショットキバリアダイオードおよびその製造方法 |
CN101350369A (zh) * | 2007-07-22 | 2009-01-21 | 万国半导体股份有限公司 | 底部阳极肖特基二极管的结构和制造方法 |
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Effective date of registration: 20220920 Address after: 518000 room 210, 2nd floor, building A3, Hangcheng innovation and entrepreneurship Park, 159 Hangcheng Avenue, Sanwei community, Hangcheng street, Bao'an District, Shenzhen City, Guangdong Province Applicant after: Hongda Xinyuan (Shenzhen) Semiconductor Co.,Ltd. Applicant after: Jinxin Electronics Manufacturing (Shanxi) Co.,Ltd. Applicant after: Jinxin Advanced Technology Research Institute (Shanxi) Co.,Ltd. Address before: 518000 room 210, 2nd floor, building A3, Hangcheng innovation and entrepreneurship Park, 159 Hangcheng Avenue, Sanwei community, Hangcheng street, Bao'an District, Shenzhen City, Guangdong Province Applicant before: Hongda Xinyuan (Shenzhen) Semiconductor Co.,Ltd. |
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