CN113451444B - Method for manufacturing solar cell - Google Patents
Method for manufacturing solar cell Download PDFInfo
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- CN113451444B CN113451444B CN202110737809.2A CN202110737809A CN113451444B CN 113451444 B CN113451444 B CN 113451444B CN 202110737809 A CN202110737809 A CN 202110737809A CN 113451444 B CN113451444 B CN 113451444B
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- 238000000034 method Methods 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 238000004140 cleaning Methods 0.000 claims abstract description 222
- 230000008569 process Effects 0.000 claims abstract description 38
- 239000007788 liquid Substances 0.000 claims description 129
- 239000000243 solution Substances 0.000 claims description 63
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 58
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 55
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 31
- 239000011259 mixed solution Substances 0.000 claims description 21
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- 238000005406 washing Methods 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 9
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 8
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 7
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000002791 soaking Methods 0.000 claims description 4
- 239000012634 fragment Substances 0.000 abstract description 28
- 238000006243 chemical reaction Methods 0.000 abstract description 18
- 239000004065 semiconductor Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 239000000969 carrier Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 10
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- 238000005215 recombination Methods 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar cells, in particular to a manufacturing method of a solar cell, which comprises the following steps: forming a raw sheet solar cell, wherein the raw sheet solar cell comprises a transparent conductive layer: dividing the original solar cell to form at least two sliced solar cells; cleaning at least the dividing surface of the sliced solar cell by adopting a wet cleaning process; and forming a grid line electrode on the surface of the sliced solar cell after the wet cleaning process. According to the solar cell manufacturing method, the problem of reduction of photoelectric conversion efficiency of the solar cell caused by division can be solved by adjusting the forming sequence of the grid line electrode, removing residual fragments of the transparent conductive layer caused by division and repairing the division surface by adopting a wet cleaning process.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a manufacturing method of a solar cell.
Background
The solar cell has the advantages of cleanness, no pollution, reproducibility, stable working performance and the like. Solar cells are classified into different types according to the structure, fabrication process, and materials used. Comprising the following steps: silicon-based solar cells, multi-compound thin film solar cells, polymer multilayer modified electrode solar cells, organic solar cells, etc., wherein silicon-based solar cells are the most developed, such as heterojunction solar cells, etc. Taking a heterojunction solar cell as an example, preparing a semiconductor layer, a transparent conducting layer and a grid line electrode on one side or two sides of an N-type substrate to form a cell, interconnecting and packaging a plurality of cells to form a component, and feeding back the component to a power grid through an inverter after power generation.
In the field of solar cells, half-chip technology is an effective way to reduce package loss and increase power of components. The half-sheet technology is to divide a standard cell into two identical half-sheets and then interconnect the two half-sheets. After the heterojunction solar cell is segmented, fragments generated by the transparent conductive layer are usually remained, and the remained fragments adhere to the segmentation surface to lead to conduction between the P-type layer and the N-type substrate, so that the photoelectric conversion efficiency of the cell is reduced. In addition, the dividing process is usually performed after the whole cell structure is completed, and the conventional method for cleaning the residual fragments is easy to damage the grid line electrode on the surface of the heterojunction solar cell, so that the method is difficult to directly apply.
Disclosure of Invention
The invention provides a solar cell manufacturing method for solving the problem that photoelectric conversion efficiency of a segmented solar cell is reduced.
The invention provides a manufacturing method of a solar cell, which comprises the following steps: forming a raw sheet solar cell, wherein the raw sheet solar cell comprises a transparent conductive layer: dividing the original solar cell to form at least two sliced solar cells; cleaning at least the dividing surface of the sliced solar cell by adopting a wet cleaning process; and forming a grid line electrode on the surface of the sliced solar cell after the wet cleaning process.
Optionally, the step of cleaning the sliced solar cell by a wet cleaning process includes: providing a cleaning solution; the sliced solar cell is arranged above the liquid level of the cleaning liquid, and the dividing surface is arranged towards the liquid level of the cleaning liquid; after the dividing surface is arranged to face the liquid level of the cleaning liquid, at least the divided solar cell pieces are immersed in the cleaning liquid in the direction from the dividing surface to the liquid level of the cleaning liquid, so that the dividing surface is completely immersed in the cleaning liquid; immersing at least the split solar cell slices into a cleaning solution, and then immersing the split surfaces in the cleaning solution;
optionally, the distance between the liquid surface of the cleaning liquid and the dividing surface is 2mm-5mm in the process of soaking the dividing surface in the cleaning liquid.
Optionally, the side wall of the sliced solar cell comprises a dividing surface; the step of cleaning the sliced solar cell by adopting the wet cleaning process comprises the following steps: providing a cleaning solution; immersing at least the split solar cell into the cleaning solution in a direction that the split surface is perpendicular to the liquid level of the cleaning solution; immersing at least the sliced solar cell in the cleaning solution in a direction that the dividing surface is perpendicular to the liquid level of the cleaning solution, and then moving the sliced solar cell in the cleaning solution along the direction perpendicular to the dividing surface;
optionally, only partially slicing the solar cell into the cleaning solution, wherein the dividing surface comprises an immersed area and an exposed area; during the movement of the sliced solar cell in the cleaning liquid in the direction perpendicular to the dividing plane, the cleaning liquid contacts the exposed area.
Optionally, the speed of the sliced solar cell moving in the cleaning solution along the direction vertical to the dividing plane is 0.5m/min-2m/min; the longitudinal dimension of the sliced solar cell sheet in the exposed area is 0-50 μm.
Optionally, after performing the wet cleaning process and before forming the gate line electrode, the method for manufacturing the solar cell further includes: performing first washing treatment on the cut solar cell; and after the first water washing treatment, performing a first drying treatment on the cut solar cell.
Optionally, the cleaning solution is a mixed solution of hydrofluoric acid, hydrochloric acid and ozone; or the cleaning liquid is a mixed solution of hydrofluoric acid and hydrochloric acid; in the cleaning solution, the mass percentage concentration of the hydrogen fluoride is 0.5% -3%; the mass percentage concentration of the hydrogen chloride is 0.01% -1%; the temperature of the cleaning liquid is 20-25 ℃; when the cleaning solution is a mixed solution of hydrofluoric acid, hydrochloric acid and ozone, the mass concentration of the ozone in the cleaning solution is 5PPM-100PPM; the cleaning time of the dividing surface in the cleaning liquid is 10s-120s.
Optionally, the cleaning solution is phosphoric acid solution, and the mass percentage concentration of phosphoric acid is 5% -30%; the cleaning time of the dividing surface in the cleaning liquid is 180s-1200s.
Optionally, the cleaning solution is a mixed solution of hydrofluoric acid, hydrochloric acid and ozone; or the cleaning liquid is a mixed solution of hydrofluoric acid and hydrochloric acid; in the cleaning solution, the mass percentage concentration of hydrogen fluoride is 2% -5%, and the mass percentage concentration of hydrogen chloride is 2% -5%; the temperature of the cleaning liquid is 20-25 ℃; when the cleaning solution is a mixed solution of hydrofluoric acid and hydrochloric acid, the mass concentration of ozone in the cleaning solution is 30PPM-100PPM, and the soaking treatment lasts for 120s-600s.
Optionally, after the first drying treatment is performed and before the gate line electrode is formed, the method for manufacturing a solar cell further includes: and passivating the cut solar cell.
Optionally, the step of passivating the cut solar cell sheet includes: passivating the parting surface by using a passivating solution; ozone is contained in the passivation solution, and the mass concentration of the ozone is 30PPM-300PPM; the passivation treatment time is 20s-180s;
optionally, after performing passivation treatment and before forming the gate line electrode, the method for manufacturing the solar cell further includes: performing second washing treatment on the cut solar cell; and performing a second drying treatment on the cut solar cell after performing the second washing treatment.
The invention has the beneficial effects that:
according to the manufacturing method of the solar cell, the sliced solar cell formed by the solar cell of the split original piece is subjected to wet cleaning, and cleaning liquid is fully contacted with the split surface in the wet cleaning so as to treat residual fragments formed when the solar cell of the original piece is split, and meanwhile, the split damage of the film layer is effectively treated so as to repair the split surface, so that the defect on the split surface is reduced, and the probability of recombination of carriers is reduced;
meanwhile, the forming sequence of the grid line electrode is adjusted, and the wet cleaning process is adopted to remove residual fragments of the transparent conductive layer caused by segmentation, so that the step of forming the grid line electrode is carried out after the wet cleaning, the wet cleaning step cannot cause corrosion damage to the grid line electrode, the residual fragments and the film damage can be fully processed, the influence on the surface flatness of the grid line electrode is avoided, the defect caused by cleaning of the surface flatness of the grid line electrode is avoided, and the photoelectric conversion efficiency of the solar cell is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a solar cell according to an embodiment of the invention;
fig. 2 is a schematic structural diagram of a raw solar cell according to an embodiment of the present invention;
fig. 3 is a schematic view illustrating a state of a solar cell slice during a process of cleaning a dividing surface of the solar cell slice in a method for manufacturing the solar cell slice according to an embodiment of the invention;
fig. 4 is a schematic view illustrating a state of a sliced solar cell during a process of cleaning a dividing surface of the sliced solar cell in a method for manufacturing a solar cell according to another embodiment of the present invention.
Reference numerals:
100. original solar cell; 101. a semiconductor substrate layer; 102. a second intrinsic amorphous silicon layer; 103. a first intrinsic amorphous silicon layer; 104. a second conductivity type semiconductor layer; 105. a first conductive type semiconductor layer; 106. a second transparent conductive layer; 107. a first transparent conductive layer; 200. slicing the solar cell; A. a dividing surface; B. cleaning liquid; C. a dividing surface, C1 and an exposed area; c2, an immersed area; D. and (5) cleaning the liquid.
Detailed Description
The embodiment of the invention provides a manufacturing method of a solar cell, which comprises the following steps: forming a raw solar cell, wherein the raw solar cell comprises a transparent conductive layer; dividing the original solar cell to form at least two sliced solar cells; cleaning at least the dividing surface of the sliced solar cell by adopting a wet cleaning process; and forming a grid line electrode on the surface of the sliced solar cell after the wet cleaning process. According to the manufacturing method of the solar cell, the forming sequence of the grid line electrode is regulated, the wet cleaning process is adopted to remove residual fragments of the transparent conductive layer caused by segmentation and repair the segmentation surface, and the step of forming the grid line electrode is carried out after the wet cleaning, so that the step of wet cleaning cannot cause corrosion damage to the grid line electrode, the influence on the surface flatness of the grid line electrode is avoided, the defect caused by cleaning of the surface flatness of the grid line electrode is avoided, and the photoelectric conversion efficiency of the solar cell is improved. In the wet cleaning, the cleaning liquid is sufficiently contacted with the dividing surface, and the residual fragments and the film damage can be sufficiently treated. Therefore, the problem that the photoelectric conversion efficiency of the segmented solar cell is reduced is effectively solved.
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Example 1
Referring to fig. 1-3, the present embodiment provides a method for manufacturing a solar cell, which is suitable for cleaning a tank, and includes the following steps:
s100: the original solar cell sheet 100 is formed.
S200: the raw solar cell sheet 100 is divided to form at least two sliced solar cell sheets 200.
S300: at least the dividing plane a of the sliced solar cell 200 is cleaned by a wet cleaning process.
S400: after the wet cleaning process is performed, a gate line electrode is formed on the surface of the sliced solar cell 200.
In the method for manufacturing the solar cell according to the embodiment, the sliced solar cell 200 formed by slicing the original solar cell 100 is subjected to wet cleaning to treat the residual fragments of the first transparent conductive layer 107 formed when the original solar cell 100 is sliced and repair the sliced surface, so that the defect on the sliced surface a is reduced and the probability of recombination of carriers is reduced. Meanwhile, in this embodiment, the forming sequence of the gate line electrode is adjusted, and the wet cleaning process is adopted to remove the residual fragments of the first transparent conductive layer 107 caused by the division, so that the step of forming the gate line electrode is performed after the wet cleaning, and therefore, the step of wet cleaning does not cause corrosion damage to the gate line electrode, avoids affecting the surface flatness of the gate line electrode, avoids defects caused by cleaning on the surface flatness of the gate line electrode, and improves the photoelectric conversion efficiency of the solar cell.
Specifically, when the solar cell is a heterojunction solar cell, a raw solar cell 100 is formed as shown in fig. 2.
The step S100 includes:
providing a semiconductor substrate layer 101, wherein the semiconductor substrate layer 101 in the embodiment may be an N-type crystal silicon wafer;
forming a first intrinsic amorphous silicon layer 103 on a side surface of the semiconductor substrate layer 101;
forming a second intrinsic amorphous silicon layer 102 on the other side surface of the semiconductor substrate layer 101;
forming a first conductive type semiconductor layer 105 on a surface of the first intrinsic amorphous silicon layer 103, which is opposite to the semiconductor substrate layer 101, wherein the first conductive type semiconductor layer 105 is, for example, a P-type amorphous silicon layer, and the P-type amorphous silicon layer and the N-type crystalline silicon wafer form a PN junction;
forming a second conductive type semiconductor layer 104 on a surface of the second intrinsic amorphous silicon layer 102 on a side facing away from the semiconductor substrate layer 101; the conductivity type of the second conductivity type semiconductor layer 104 is the same as that of the semiconductor substrate layer 101, and the second conductivity type semiconductor layer 104 is, for example, an N-type amorphous silicon layer, and the N-type amorphous silicon layer and the N-type crystalline silicon wafer form a high-low junction;
forming a first transparent conductive layer 107 on a side of the first conductivity type semiconductor layer 105 facing away from the semiconductor substrate layer 101; a second transparent conductive layer 106 is formed on a side of the second conductive type semiconductor layer 104 facing away from the semiconductor substrate layer 101. The first transparent conductive layer 107 and the second transparent conductive layer 106 are used for collecting carriers so as to facilitate transmission to the gate line electrode, and optical reflection can be reduced.
Referring to fig. 2, for the conventional solar cell dividing method, after the heterojunction solar cell is divided, fragments are generally generated in the first transparent conductive layer 107, and the residual fragments adhere to the dividing plane a to cause the first conductive type semiconductor layer 105 (i.e., P-type layer) to be conducted with the semiconductor substrate layer 101 (i.e., N-type wafer), which results in a decrease in photoelectric conversion efficiency of the divided solar cell. The manufacturing method of the solar cell can avoid the problem and improve the photoelectric conversion efficiency of the solar cell.
Step S200 includes:
the original solar cell sheet 100 is divided at the position of the broken line in fig. 2 to form at least two sliced solar cell sheets 200. The sliced solar cell 200 has a dividing plane a formed by dividing the raw solar cell 100. The dividing method specifically may adopt a laser cutting process, and after laser cutting, cutting residual fragments of the transparent conductive layer are attached to the dividing surface a of the sliced solar cell 200, and because the transparent conductive layer has conductivity, the residual fragments of the transparent conductive layer can lead to conduction between the N-type crystalline silicon wafer and the P-type layer, so as to seriously reduce the photoelectric conversion efficiency of the solar cell.
Step S300 includes:
a cleaning solution is provided. The method comprises the following steps: a cleaning device is provided, which has a cleaning liquid tank in which a cleaning liquid B is contained. The cleaning device is provided with an automatic control structure, and can conveniently control the cleaning time, the cleaning temperature and the concentration of the cleaning liquid.
The sliced solar cell 200 is disposed above the liquid level of the cleaning liquid B (i.e., the broken line in fig. 3) with the dividing surface a facing the liquid level of the cleaning liquid B. In this embodiment, the dividing surface a is always parallel to the liquid surface of the cleaning liquid B. Specifically, a solar cell clamp is provided, which is adapted to clamp the sliced solar cell 200 to maintain a fixed position and state, and the sliced solar cell 200 is clamped by the solar cell clamp so that the dividing surface a faces the liquid surface of the cleaning liquid B, and the state is maintained. The solar cell clamp may be, for example, a basket clamp.
After the dividing surface a is set to face the liquid surface of the cleaning liquid, at least the divided solar cell 200 is immersed in the cleaning liquid B in the direction from the dividing surface a to the liquid surface of the cleaning liquid B so that the dividing surface a is completely immersed in the cleaning liquid B. In some embodiments, the diced solar cell piece 200 is completely immersed in the cleaning solution B.
After immersing at least the divided solar cell 200 in the cleaning solution B, the divided surface a is immersed in the cleaning solution B. In various embodiments, both cases where only a portion of the diced solar cell 200 is immersed in the rinse solution B, and where the diced solar cell 200 is completely immersed in the rinse solution B are included.
By means of the wet cleaning mode, the division surface is completely immersed in the cleaning liquid, the residual fragments and the membrane layer division damage are fully contacted with the cleaning liquid, the residual fragments can be fully removed, the membrane layer damage can be fully treated, and the division surface is repaired. And the cleaning mode of immersing the sliced solar cell 200 in the cleaning liquid B is simple to operate.
Specifically, in the process of immersing the dividing surface a of the sliced solar cell 200 in the cleaning liquid B, the distance from the liquid surface of the cleaning liquid B to the dividing surface a is 2mm to 5mm, that is, the dividing surface a is located 2mm to 5mm below the liquid surface of the cleaning liquid B, for example, 2mm, 3mm, 4mm, 5mm may be used. If the distance from the liquid surface of the cleaning liquid to the dividing surface is less than 2mm, insufficient contact between the dividing surface A and the cleaning liquid B may occur, and the treatment effect is poor; if the distance from the liquid surface of the cleaning liquid B to the dividing surface is greater than 5mm, the film layers of the solar cell sheet 200 may be damaged. The distance from the liquid surface of the cleaning liquid B to the dividing surface a is 2mm to 5mm, and a balance can be achieved between effectively treating the dividing surface a and causing as little damage to the solar cell sheet 200 as possible.
In this embodiment, the cleaning solution B is a mixed solution of hydrofluoric acid, hydrochloric acid and ozone; alternatively, the cleaning liquid B is a mixed solution of hydrofluoric acid and hydrochloric acid. The hydrofluoric acid can effectively oxidize the residual fragments to form oxides; the hydrochloric acid can quickly dissolve and remove the oxide to realize cleaning; ozone has different oxidizing power from hydrofluoric acid, and the addition of ozone can improve the treatment effect on different residual fragments, so that the residual fragments are removed more thoroughly and the dividing surface is repaired.
In the cleaning liquid B, the mass percentage concentration of the hydrogen fluoride is 0.5% -3%, for example, 0.5%, 1%, 1.5%, 2%, 2.5% and 3%; the concentration of the hydrogen chloride is 0.01% -1% by mass, for example, 0.01%, 0.05%, 0.1%, 0.2%, 0.5%, 0.8% and 1%; the temperature of the cleaning liquid is 20℃to 25℃and may be, for example, 20℃21℃22℃23℃24℃25 ℃.
When the cleaning liquid B is a mixed solution of hydrofluoric acid, hydrochloric acid and ozone, the mass concentration of the ozone in the cleaning liquid is 5PPM-100PPM, for example, the ozone can be 5PPM, 10PPM, 25PPM, 50PPM, 75PPM and 100PPM;
the washing time of the dividing surface a in the washing liquid B is 10s to 120s, and may be, for example, 10s, 20s, 30s, 60s, 90s, 120s.
By adopting the conditions, the residual fragments of the transparent conductive layer can be effectively removed, the dividing surface can be repaired, and the photoelectric conversion efficiency of the solar cell can be improved.
In other embodiments, cleaning solution B is a phosphoric acid solution. The phosphoric acid hardly reacts to the film layers except the transparent conductive layer, so that the residual fragments can be cleaned in a targeted manner, and the damage to other film layers is small. The mass percentage concentration of the phosphoric acid is 5% -30%, for example, can be 5%, 10%, 15%, 20%, 25%, 30%; the cleaning time of the dividing surface a in the cleaning liquid B is 180s to 1200s, and may be 180s, 360s, 720s, or 1200s, for example. By adopting the conditions, the residual fragments of the transparent conductive layer can be effectively removed and the dividing surface can be repaired, namely, the photoelectric conversion efficiency of the solar cell is improved.
The method for manufacturing the solar cell according to the embodiment further includes:
step S400: after the wet cleaning process is performed, a gate line electrode is formed on the surface of the sliced solar cell 200.
In this embodiment, the method for manufacturing a solar cell further includes: after performing the wet cleaning process and before forming the gate line electrode (i.e., after step S300, before step S400), performing a first water cleaning process on the cut solar cell sheet 200; and performing a first drying process on the cut solar cell sheet 200. The first water washing treatment prevents the cleaning liquid of the wet washing process from remaining on the surface of the sliced solar cell 200 and from adversely affecting the formation of the gate line electrode. The first drying process removes moisture from the surface of the sliced solar cell 200, which is advantageous for the gate electrode process.
In this embodiment, the method for manufacturing a solar cell further includes: after the first drying process is performed and before the gate line electrode is formed, the cut solar cell sheet 200 is subjected to a passivation process. The passivation treatment can effectively treat dangling bonds on the dividing surface A of the sliced solar cell 200, and Si-dangling bonds on the dividing surface A form Si=O bonds, so that the dangling bonds are passivated, carriers are not easy to be compounded on the dividing surface A, the loss of the carriers is reduced, and the photoelectric conversion efficiency of the solar cell is improved.
Specifically, the step of passivating the diced solar cell 200 includes: passivating the parting surface by using a passivating solution; ozone is contained in the passivation solution, and the mass concentration of the ozone is 30PPM-300PPM, for example, 30PPM, 60PPM, 90PPM, 120PPM, 180PPM, 240PPM and 300PPM; the passivation treatment time is 20s-180s, for example, 20s, 40s, 60s, 120s, 180s.
Further, the method for manufacturing the solar cell further comprises the following steps: after performing the passivation process and before forming the gate line electrode, performing a second water washing process on the cut solar cell sheet 200; and, after the second water washing treatment, performing a second drying treatment on the cut solar cell sheet 200.
The solar cell in this embodiment is an amorphous silicon/crystalline silicon heterojunction cell or an amorphous silicon/crystalline silicon heterojunction-perovskite stacked cell. In other embodiments, other solar cells are also possible.
When the solar cell is a heterojunction solar cell, the method for manufacturing the solar cell can prevent carriers in the semiconductor substrate layer from entering the first transparent conductive layer quickly, reduce the probability of recombination between the carriers in the semiconductor substrate layer and carriers of opposite conductivity types from the first conductivity type semiconductor layer, and increase the carriers which can be output by the solar cell, namely, improve the photoelectric conversion efficiency of the solar cell. The division damage repair division surface can be effectively processed, so that the division damage of the division surface A of the sliced solar cell 200 is smoother, the recombination center caused by unevenness is reduced, the recombination probability of carriers of opposite conductivity types in the recombination center is reduced, and the photoelectric conversion efficiency of the solar cell can be improved.
Example 2
Referring to fig. 1-3, the present embodiment provides a method for manufacturing a solar cell, which is also applicable to tank cleaning, and differs from embodiment 1 in that: the cleaning liquid B is a mixed solution of hydrofluoric acid, hydrochloric acid and ozone; or the cleaning liquid is a mixed solution of hydrofluoric acid and hydrochloric acid;
in the cleaning solution, the mass percentage concentration of hydrogen fluoride is 2% -5%, and the mass percentage concentration of hydrogen chloride is 2% -5%; the temperature of the cleaning liquid is 20-25 ℃;
when the cleaning solution is a mixed solution of hydrofluoric acid, hydrochloric acid and ozone, the mass concentration of the ozone in the cleaning solution is 30PPM-100PPM;
the soaking treatment lasts for 120s-600s.
The other cleaning conditions were the same as those in example 1, and will not be described here.
By adopting the conditions, the concentration of the hydrogen fluoride and the hydrochloric acid in percentage by mass is higher, the reaction time is longer, on one hand, the residual fragments of the transparent conductive layer can be effectively removed, and on the other hand, the segmentation damage repair segmentation surface of the segmentation surface can be further processed, so that the segmentation surface is smoother, and the photoelectric conversion efficiency of the solar cell can be improved.
Example 3
Referring to fig. 1 and 4, the present embodiment provides a method for manufacturing a solar cell, which is different from embodiment 1 described above in that: the method of the embodiment is suitable for chain cleaning, and the steps of cleaning the sliced solar cell 200 by adopting a wet cleaning process include:
providing a cleaning solution; the method comprises the following steps: a cleaning device is provided, which has a cleaning liquid tank in which a cleaning liquid D is contained. The cleaning device is provided with an automatic control structure, and can conveniently control the cleaning time, the cleaning temperature and the concentration of the cleaning liquid.
The side wall of the sliced solar cell 200 includes a dividing plane C, and at least part of the sliced solar cell 200 is immersed in the cleaning liquid D in a direction in which the dividing plane C is perpendicular to a liquid surface (refer to a dotted line in fig. 4) of the cleaning liquid D. Specifically, a solar cell carrier is provided, and the solar cell carrier is suitable for carrying the sliced solar cell 200 and transporting the sliced solar cell 200 to move in a fixed direction. Specifically, the solar cell carrier may be, for example, a roller chain set.
Immersing at least the diced solar cell 200 in the cleaning liquid D in a direction in which the dividing surface C is perpendicular to the liquid surface of the cleaning liquid D, and then moving the diced solar cell 200 in the cleaning liquid D in a direction perpendicular to the dividing surface C; specifically, the solar cell carrier transports the sliced solar cell 200 in the cleaning liquid D in a direction perpendicular to the dividing plane C.
By such a post-dicing cleaning method, the dicing solar cell 200 can be cleaned on the dicing surface C during movement, and the cleaning efficiency is high, which is suitable for mass cleaning.
In some embodiments, only a portion of the sliced solar cell 200 is immersed in the rinse solution D, the dividing plane C including the immersed region C2 and the exposed region C1; during the movement of the diced solar cell 200 in the direction perpendicular to the dividing plane C in the cleaning liquid D, the cleaning liquid D contacts the exposed region C1. Since the sliced solar cell 200 moves in the direction perpendicular to the dividing plane C in the cleaning liquid D, a part of the liquid surface is excited to contact the exposed area C1 of the dividing plane C by the cleaning liquid D pushed by the sliced solar cell 200, thereby achieving complete cleaning of the dividing plane C. The sliced solar cell 200 is thus only partially immersed in the cleaning liquid D, and the sliced solar cell 200 can be immersed in the cleaning liquid D as little as possible, so that the damage to the film layers of the sliced solar cell 200 other than the dividing plane C (including the side wall of the sliced solar cell 200 opposite to the dividing plane C, the side wall of the sliced solar cell 200 perpendicular to the dividing plane C, and the film layers not immersed in the cleaning liquid D) is as small as possible.
In the present embodiment, the speed at which the sliced solar cell 200 moves in the cleaning liquid D in the direction perpendicular to the dividing plane C is 0.5m/min to 2m/min, for example, may be 0.5m/min, 1m/min, 1.5m/min, 2m/min; if the rate is less than 0.5m/min, the film layer (e.g., transparent conductive layer) of the sliced solar cell 200, which is in contact with the cleaning solution D, may be corroded and damaged by the contact with the cleaning solution D of the mixed acid solution for a long time due to the increase of the reaction time; if the rate is more than 2m/min, the reaction time is too short to sufficiently treat the parting plane C. The speed of the sliced solar cell 200 moving in the direction perpendicular to the dividing plane in the cleaning liquid D is 0.5m/min-2m/min; a balance can be achieved between effectively handling the dividing plane and minimizing damage to the solar cell. The longitudinal dimension of the sliced solar cell 200 in the exposed area is 0-50 μm, and may be, for example, 0, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm. If the longitudinal dimension of the sliced solar cell 200 in the exposed area is smaller than 0, the sliced solar cell 200 is completely immersed into the cleaning solution, and the mixed acid solution may cause more damage to the film layer in the cleaning process; if the longitudinal dimension of the sliced solar cell 200 in the exposed area is greater than 50 μm, the coverage of the sliced surface is insufficient, and the effect of treating the residual chips is poor; the longitudinal dimension of the diced solar cell 200 in the exposed region is in the range of 0-50 μm, which balances the effective handling of the dividing plane with minimal damage to the diced solar cell.
In this embodiment, the cleaning solution D is a mixed solution of hydrofluoric acid, hydrochloric acid, and ozone; alternatively, the cleaning liquid D is a mixed solution of hydrofluoric acid and hydrochloric acid. The hydrofluoric acid can effectively oxidize the residual fragments to form oxides, and the hydrochloric acid can rapidly dissolve and remove the oxides to realize cleaning; ozone has different oxidizing power from hydrofluoric acid, and the addition of ozone can accelerate oxidation, so that the residual fragments are removed more thoroughly, and the effect of repairing the parting surface is better.
In the cleaning liquid D, the mass percentage concentration of the hydrogen fluoride is 0.5% -3%, for example, 0.5%, 1%, 1.5%, 2%, 2.5% and 3%; the concentration of the hydrogen chloride is 0.01% -1% by mass, for example, 0.01%, 0.05%, 0.1%, 0.2%, 0.5%, 0.8% and 1%; the temperature of the cleaning liquid is 20℃to 25℃and may be, for example, 20℃21℃22℃23℃24℃25 ℃.
When the cleaning solution D is a mixed solution of hydrofluoric acid, hydrochloric acid and ozone, the mass concentration of ozone in the cleaning solution is 5PPM-100PPM, for example, 5PPM, 10PPM, 25PPM, 50PPM, 75PPM and 100PPM.
The washing time of the divided surface C in the washing liquid D is 10s to 120s, and may be, for example, 10s, 20s, 30s, 60s, 90s, 120s.
By adopting the conditions, the residual fragments of the transparent conductive layer can be effectively removed, the dividing surface can be repaired, and the photoelectric conversion efficiency of the solar cell can be improved.
In other embodiments, the cleaning solution D is a phosphoric acid solution, and the mass percentage concentration of phosphoric acid is 5% -30%, for example, may be 5%, 10%, 15%, 20%, 25%, 30%; the washing time of the divided surface C in the washing liquid D is 180s to 1200s, and may be 180s, 360s, 720s, 1200s, for example. By adopting the conditions, the residual fragments of the transparent conductive layer can be effectively removed and the dividing surface can be repaired, namely, the photoelectric conversion efficiency of the solar cell is improved.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (13)
1. The manufacturing method of the solar cell is characterized by comprising the following steps:
forming a raw solar cell, wherein the raw solar cell comprises a transparent conductive layer;
dividing the original solar cell sheet to form at least two sliced solar cell sheets;
cleaning at least the dividing surface of the sliced solar cell by adopting a wet cleaning process;
forming a grid line electrode on the surface of the sliced solar cell after the wet cleaning process is carried out;
the step of cleaning the sliced solar cell by adopting a wet cleaning process comprises the following steps:
providing a cleaning solution;
immersing at least part of the dividing surface into the cleaning liquid.
2. The method of manufacturing a solar cell according to claim 1, wherein the step of cleaning the sliced solar cell using a wet cleaning process comprises:
disposing the sliced solar cell above the liquid level of the cleaning liquid with the dividing surface facing the liquid level of the cleaning liquid;
after the dividing surface is set to face the liquid level of the cleaning liquid, immersing at least part of the sliced solar cell in the cleaning liquid in a direction from the dividing surface to the liquid level of the cleaning liquid so that the dividing surface is completely immersed in the cleaning liquid;
and immersing at least part of the sliced solar cell into the cleaning solution, and then immersing the dividing surface in the cleaning solution.
3. The method according to claim 2, wherein a distance from a liquid surface of the cleaning liquid to the dividing surface is 2mm to 5mm in the process of immersing the dividing surface in the cleaning liquid.
4. The method of manufacturing a solar cell according to claim 1, wherein the side wall of the sliced solar cell includes a dividing surface; the step of cleaning the sliced solar cell by adopting a wet cleaning process comprises the following steps:
immersing at least part of the sliced solar cell in the cleaning liquid in a direction in which the dividing surface is perpendicular to the liquid level of the cleaning liquid;
after immersing at least part of the sliced solar cell in the cleaning liquid in a direction in which the dividing surface is perpendicular to the liquid surface of the cleaning liquid, the sliced solar cell is moved in the cleaning liquid in a direction perpendicular to the dividing surface.
5. The method of manufacturing a solar cell according to claim 4, wherein,
immersing only a part of the sliced solar cell into the cleaning solution, wherein the dividing surface comprises an immersed area and an exposed area; the cleaning liquid contacts the exposed area in the process that the sliced solar cell moves in the cleaning liquid along the direction perpendicular to the dividing surface.
6. The method of manufacturing a solar cell according to claim 5, wherein a rate at which the sliced solar cell moves in the cleaning liquid in a direction perpendicular to the dividing plane is 0.5m/min to 2m/min;
the longitudinal dimension of the sliced solar cell sheet in the exposed area is 0-50 mu m.
7. The method for manufacturing a solar cell according to claim 2 or 4, wherein,
the cleaning liquid is a mixed solution of hydrofluoric acid, hydrochloric acid and ozone; or the cleaning liquid is a mixed solution of hydrofluoric acid and hydrochloric acid;
in the cleaning liquid, the mass percentage concentration of the hydrogen fluoride is 0.5% -3%; the mass percentage concentration of the hydrogen chloride is 0.01% -1%;
the temperature of the cleaning liquid is 20-25 ℃;
when the cleaning solution is a mixed solution of hydrofluoric acid, hydrochloric acid and ozone, the mass concentration of the ozone in the cleaning solution is 5PPM-100PPM;
the cleaning time of the dividing surface in the cleaning liquid is 10s-120s.
8. The method for manufacturing a solar cell according to claim 2 or 4, wherein,
the cleaning solution is phosphoric acid solution, and the mass percentage concentration of phosphoric acid is 5% -30%;
the cleaning time of the dividing surface in the cleaning liquid is 180s-1200s.
9. The method for manufacturing a solar cell according to claim 2, wherein,
the cleaning liquid is a mixed solution of hydrofluoric acid, hydrochloric acid and ozone; or the cleaning liquid is a mixed solution of hydrofluoric acid and hydrochloric acid;
in the cleaning solution, the mass percentage concentration of hydrogen fluoride is 2% -5%, and the mass percentage concentration of hydrogen chloride is 2% -5%;
the temperature of the cleaning liquid is 20-25 ℃;
when the cleaning solution is a mixed solution of hydrofluoric acid, hydrochloric acid and ozone, the mass concentration of ozone in the cleaning solution is 30PPM-100PPM;
the soaking treatment lasts for 120s-600s.
10. The method of manufacturing a solar cell according to claim 2 or 4, wherein after performing the wet cleaning process and before forming the gate line electrode, the method further comprises:
performing first washing treatment on the sliced solar cell; the method comprises the steps of,
and after the first water washing treatment, carrying out first drying treatment on the sliced solar cell.
11. The method for manufacturing a solar cell according to claim 9, wherein,
after the first drying treatment is performed and before the grid line electrode is formed, the manufacturing method of the solar cell further comprises the following steps: and passivating the sliced solar cell.
12. The method for manufacturing a solar cell according to claim 11, wherein,
the step of passivating the sliced solar cell sheet comprises the following steps: passivating the dividing surface by adopting a passivating solution; ozone is contained in the passivation solution, and the mass concentration of the ozone is 30PPM-300PPM; the passivation treatment time is 20s-180s.
13. The method for manufacturing a solar cell according to claim 11, wherein,
after the passivation treatment is performed and before the gate line electrode is formed, the method for manufacturing the solar cell further includes:
performing second washing treatment on the sliced solar cell; the method comprises the steps of,
and after the second water washing treatment, performing a second drying treatment on the sliced solar cell.
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