CN113410412A - High-performance color silicon-based OLED and preparation method thereof - Google Patents

High-performance color silicon-based OLED and preparation method thereof Download PDF

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CN113410412A
CN113410412A CN202110671618.0A CN202110671618A CN113410412A CN 113410412 A CN113410412 A CN 113410412A CN 202110671618 A CN202110671618 A CN 202110671618A CN 113410412 A CN113410412 A CN 113410412A
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refractive index
dbr
oled
film layer
thickness
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吕磊
李维维
许嵩
刘晓佳
刘胜芳
赵铮涛
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Semiconductor Integrated Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract

The invention discloses a high-performance color silicon-based OLED and a preparation method thereof, and the high-performance color silicon-based OLED comprises the following steps: the OLED comprises a cathode layer, an OLED organic layer, an anode layer and a reflecting layer which are arranged from top to bottom in sequence; the reflection layer comprises a series of film layers with different refractive indexes or film layers with different thicknesses, the DBR structure and the device organic layer are added to form a microcavity structure, so that RGB in the WOLED is respectively enhanced, the luminous efficiency of the WOLED is further improved, and the service life of the product is prolonged.

Description

High-performance color silicon-based OLED and preparation method thereof
Technical Field
The invention belongs to the technical field of color silicon-based OLEDs, and particularly relates to a high-performance color silicon-based OLED and a preparation method thereof.
Background
Compared with the traditional AMOLED display technology, the silicon-based OLED micro-display takes the monocrystalline silicon chip as the substrate, and the pixel size is smaller and the integration level is higher by means of the mature CMOS process, so that the silicon-based OLED micro-display can be manufactured into a near-to-eye display product which is comparable to large-screen display and is widely concerned. Based on the technical advantages and wide market, in the fields of military and consumer electronics, the silicon-based OLED micro-display will raise the new wave of near-to-eye display, and bring unprecedented visual experience for users.
The method is limited by the manufacturing technology of a metal mask, common mask evaporation OLED is mostly adopted in the existing high-ppi silicon-based OLED products, and WOLED (white OLED) + CF (color filter) technology is mostly adopted in the case of full-color products; the device obtained by the method is generally in a weak microcavity structure, the thickness of the device is different because the emission peak value of R, G, B is different and the resonant cavity length is different, while the WOLED is prepared by common mask, the structure and the film thickness of the device on each pixel of R, G, B are the same, and the efficiency of the silicon-based OLED adopting the structure is low.
In the process of implementing the invention, the inventor finds that the prior art has at least the following problems:
at present, a method for enhancing the microcavity effect of the WOLED is to fabricate ITO film layers with different thicknesses on a reflective anode, that is, ITO thicknesses corresponding to RGB pixel regions are different, and the microcavity adjustment of three colors of RGB in the WOLED is realized through the ITO thickness. The scheme utilizes a metal reflecting layer (generally Al or Ag) under an anode and a semitransparent and semi-reflective metal cathode to form a microcavity of the OLED. However, the ITO film layers with different thicknesses corresponding to the RGB pixels prepared by the method need to be subjected to a multiple coating exposure process, and since the silicon-based OLED products are all high PPI products, the line width of the ITO of the anode is required to be below 1um, the flatness and the accuracy of the thickness of the ITO surface prepared by the process are not easy to control, and the ITO film layer is in direct contact with the OLED, the flatness and the thickness of the surface of the ITO film layer are directly related to the performance of the OLED device, namely the thickness of the ITO film layer determines the thickness of the optical microcavity, and the flatness of the surface of the ITO film layer affects the light emitting efficiency of the OLED.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a high-performance color silicon-based OLED and a preparation method thereof, wherein a micro-cavity structure is formed by adding a DBR structure and a device organic layer, so that RGB in a WOLED is respectively enhanced, the luminous efficiency of the WOLED is further improved, and the service life of the product is prolonged.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a high performance color silicon-based OLED comprising:
the OLED comprises a cathode layer, an OLED organic layer, an anode layer and a reflecting layer which are arranged from top to bottom in sequence;
the reflective layer comprises a series of layers of film of different refractive index or of different thickness.
The preparation method of the high-performance color silicon-based OLED comprises the following steps:
1) the total thickness d of the organic layers of the OLED was 120nm, the refractive index n of the organic layers of the OLED was 1.8, and the wavelength λ of R was set to beR610nm, wavelength λ of GG530nm, let B have a wavelength λB460nm, neglecting the phase shift of light at the cathode and anode interface;
2) calculating formula by OLED microcavity:
Figure BDA0003119538520000021
m is a positive integer, wherein niRefractive index of the organic layer of the OLED, diIs the thickness of the organic layer, phi is the reflection phase shift of light on the cathode and anode surfaces, and lambda is the microcavity resonance enhancing wavelength,
Figure BDA0003119538520000022
△n＝nH-nLwherein n isHThe refractive index of the high refractive index film layer constituting the DBR-Bragg reflector is nRH、nGH、nBH；nLIs the refractive index of the low refractive index film layer constituting the DBR, which can be sequentially denoted as nRL、nGL、nBL；dHIs the thickness of the high refractive film layer constituting the DBR, which can be sequentially denoted as dRH、dGH、dBH；dLIs the thickness of the low refractive index film layer constituting the DBR, which can be sequentially denoted as dRL、dGL、dBL(ii) a m is the order of the emission mode, also called the order of the microcavity, and only the light whose optical thickness and wavelength satisfy the above relationship is enhanced;
3) in combination with the above-mentioned dummySetting: the total thickness d of the organic layers of the OLED is 120nm, the refractive index n of the organic layers is 1.8, and the wavelength lambda of R isR610nm, wavelength λ of GG530nm, let B have a wavelength λBThe phase shift of light at the interface of the cathode and the anode is ignored, and key parameters of the DBR microstructure corresponding to RGB under the condition of microcavities of different orders are calculated and obtained
Figure BDA0003119538520000031
4) According to the obtained D values for the RGB pairs under the microcavity condition with different orders, in order to further obtain the values of the thickness and the refractive index of a film layer in the DBR microstructure, the D value under the condition that m is 2 is selected, and the following equation set is obtained:
Figure BDA0003119538520000032
Figure BDA0003119538520000033
Figure BDA0003119538520000034
5) in order to obtain accurate data and feasibility of process realization, the DBR microstructures corresponding to RGB respectively are selected;
6) the material of the film layers with different refractive indexes comprises ITO-n (2.0), SIO-n (1.5), SIN-n (1.86), ALO-n (1.6) and IZO-n (1.8), and the thickness of the film layer is selected from the range of 1nm-100 nm;
7) the respective DBR microstructures corresponding to the RGB pixels are realized through a patterning process of exposure, development and etching.
In the step 5), there are two schemes, scheme 1: the film materials selected in the respective corresponding DBR microstructures of RGB are the same, namely nRH＝nGH＝nBH，nRL＝nGL＝nBLAt this time, the thickness relationship between the high refractive index film layer and the low refractive index film layer can be calculated by the equation systemThe respective thicknesses can be respectively selected by combining with the actual process; scheme 2: the thicknesses of the selected films in the respective DBR microstructures corresponding to RGB are the same, i.e. dRH＝dGH＝dBH，dRL＝dGL＝dBLAnd calculating the relation between the refractive indexes of the high refractive index film layer and the low refractive index film layer through the equation system, and selecting the corresponding material by combining an actual process.
One of the technical schemes has the following advantages or beneficial effects that 1, a DBR structure and a device organic layer are added to form a microcavity structure, so that RGB in the WOLED is respectively enhanced, the luminous efficiency of the WOLED is improved, and the service life of the WOLED is prolonged; 2. calculating to obtain the thickness and refractive index data of the microstructure corresponding to the RGB pixel through a DBR microcavity enhancement theoretical formula, and realizing microcavity enhancement of corresponding wavelength by selecting the material of the corresponding refractive index and the thickness of the film layer; the ITO film layer directly contacted with the OLED organic layer can keep the same film thickness and better flatness and electrical performance, and is beneficial to the stability of products and the improvement of yield.
Drawings
FIG. 1 is a schematic structural diagram of a high performance color silicon-based OLED provided in an embodiment of the present invention;
the labels in the above figures are: 1a, a cathode layer, 1b, an OLED organic layer, 1c, an anode layer, 1d, a reflective layer, 1e, an optical microcavity.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1. Referring to fig. 1, a WOLED top-emitting device structure is selected, and characteristics and energy level collocation of materials of each layer meet requirements of OLEDs. To facilitate calculation of the DBR microstructure, in the present invention: the total thickness d of the organic layers of the OLED is 120nm, the refractive index n of the organic layers is 1.8, and the wavelength lambda of R isR610nm, wavelength λ of GG530nm, let B have a wavelength λB460nm, neglecting the phase shift of light at the cathode and anode interface;
2. calculating formula by OLED microcavity:
Figure BDA0003119538520000041
(m is a positive integer), wherein niRefractive index of the organic layer of the OLED, diIs the thickness of the organic layer, phi is the reflection phase shift of light on the cathode and anode surfaces, and lambda is the microcavity resonance enhancing wavelength,
Figure BDA0003119538520000051
△n＝nH-nLwherein (n)HThe refractive index of the high refractive index film layer constituting the DBR, and the refractive index of the high refractive index film layer in each DBR structure of RGB is respectively recorded as nRH、nGH、nBH；nLIs the refractive index of the low refractive index film layer constituting the DBR, which can be sequentially denoted as nRL、nGL、nBL；dHIs the thickness of the high refractive film layer constituting the DBR, which can be sequentially denoted as dRH、dGH、dBH；dLIs the thickness of the low refractive index film layer constituting the DBR, which can be sequentially denoted as dRL、dGL、dBL) (ii) a m is the order of the emission mode, also called the order of the microcavity, and is only intensified if the optical back and wavelength of the microcavity satisfy the above relationship.
3. In this case, the above assumptions are combined: the total thickness d of the organic layers of the OLED is 120nm, the refractive index n of the organic layers is 1.8, and the wavelength lambda of R isR610nm, wavelength λ of GG530nm, let B have a wavelength λBThe phase shift of light at the interface of the cathode and the anode is ignored, and key parameters of the DBR microstructure corresponding to RGB under the condition of microcavities of different orders are calculated and obtained
Figure BDA0003119538520000052
As shown in table 1:
TABLE 1 DBR optical structure parameter D values corresponding to RGB under different order microcavity conditions
Figure BDA0003119538520000053
4. The D values for RGB pairs under different orders of microcavities are obtained from table 1, and in order to further obtain the values of the thickness and refractive index of the film layer in the DBR microstructure, the D value under the condition that m is 2 is selected in this example, and the following equation set is obtained:
Figure BDA0003119538520000061
Figure BDA0003119538520000062
Figure BDA0003119538520000063
5. in order to obtain accurate data and feasibility of process implementation, the following 2 schemes are provided for the respective corresponding DBR microstructures of RGB, scheme 1: the film materials selected in the respective corresponding DBR microstructures of RGB are the same, namely nRH＝nGH＝nBH，nRL＝nGL＝nBLAt the moment, the thickness relation between the high refractive index film layer and the low refractive index film layer can be obtained through calculation of the equation set, and the thicknesses of the high refractive index film layer and the low refractive index film layer can be selected respectively by combining with an actual process; scheme 2: the thicknesses of the selected films in the respective DBR microstructures corresponding to RGB are the same, i.e. dRH＝dGH＝dBH，dRL＝dGL＝dBLAnd calculating the relation between the refractive indexes of the high refractive index film layer and the low refractive index film layer through the equation system, and selecting the corresponding material by combining an actual process.
6. In this case, the material of the film layers with different refractive indexes may be selected from ITO (n is 2.0), SIO (n is 1.5), SIN (n is 1.86), ALO (n is 1.6), IZO (n is 1.8), or others, and the thickness of the film layer may be selected from a range of 1nm to 100 nm.
And 7, realizing respective DBR microstructures corresponding to the RGB pixels by using a conventional patterning process such as exposure, development and etching.
The proposal is mainly to arrange a plurality of layers below the anode ITOA plurality of layers with different refractive indexes, wherein the plurality of layers (fig. 1d) form a bragg reflector (DBR), and the DBR structure and the semitransparent cathode (fig. 1a) form an optical resonant cavity; the DBR layer under the anode (figure 1c) corresponding to RGB selects film layers with different refractive indexes or film layers with different thicknesses, and a microstructure matched with the RGB anode pattern is formed by an exposure and development technology; by utilizing the OLED resonant cavity interference principle and through the following DBR type microcavity interference enhancement formula
Figure BDA0003119538520000071
The thickness and the refractive index of the DBR film layer required by RGB (Red, Green, blue) respective enhancement can be calculated, so that the cavity length of an optical microcavity formed by the microstructure is respectively matched with the optical cavity length which can be resonantly enhanced by RGB, and further the high-performance color OLED structure is obtained.
Calculating the optical thickness of the DBR microstructure required by RGB respective resonance reinforcement by using a DBR microcavity reinforcement formula; the refractive index and thickness of each film layer material in the DBR microstructure are required; and patterning the respective DBR microstructures corresponding to the RGB pixels.
After the scheme is adopted, 1, a DBR structure and a device organic layer are added to form a microcavity structure, so that RGB in the WOLED is respectively enhanced, the luminous efficiency of the WOLED is further improved, and the service life of a product is prolonged; 2. calculating to obtain the thickness and refractive index data of the microstructure corresponding to the RGB pixel through a DBR microcavity enhancement theoretical formula, and realizing microcavity enhancement of corresponding wavelength by selecting the material of the corresponding refractive index and the thickness of the film layer; the ITO film layer directly contacted with the OLED organic layer can keep the same film thickness and better flatness and electrical performance, and is beneficial to the stability of products and the improvement of yield.
The invention has been described above with reference to the accompanying drawings, it is obvious that the invention is not limited to the specific implementation in the above-described manner, and it is within the scope of the invention to apply the inventive concept and solution to other applications without substantial modification.

Claims (3)

1. A high performance color silicon-based OLED comprising:
the OLED comprises a cathode layer, an OLED organic layer, an anode layer and a reflecting layer which are arranged from top to bottom in sequence;
the reflective layer comprises a series of layers of film of different refractive index or of different thickness.
2. A method of making a high performance color silicon-based OLED according to claim 1 comprising the steps of:
1) the total thickness d of the organic layers of the OLED was 120nm, the refractive index n of the organic layers of the OLED was 1.8, and the wavelength λ of R was set to beR610nm, wavelength λ of GG530nm, let B have a wavelength λB460nm, neglecting the phase shift of light at the cathode and anode interface;
2) calculating formula by OLED microcavity:
Figure FDA0003119538510000011
m is a positive integer, wherein niRefractive index of the organic layer of the OLED, diIs the thickness of the organic layer, phi is the reflection phase shift of light on the cathode and anode surfaces, and lambda is the microcavity resonance enhancing wavelength,
Figure FDA0003119538510000012
△n＝nH-nLwherein n isHThe refractive index of the high refractive index film layer constituting the DBR-Bragg reflector is nRH、nGH、nBH；nLIs the refractive index of the low refractive index film layer constituting the DBR, which can be sequentially denoted as nRL、nGL、nBL；dHIs the thickness of the high refractive film layer constituting the DBR, which can be sequentially denoted as dRH、dGH、dBH；dLIs the thickness of the low refractive index film layer constituting the DBR, which can be sequentially denoted as dRL、dGL、dBL(ii) a m is the order of the emission mode, also called the order of the microcavity, only when the optical thickness and wavelength of the microcavity are fullThe light in the above relationship is intensified;
3) combining the above assumptions: the total thickness d of the organic layers of the OLED is 120nm, the refractive index n of the organic layers is 1.8, and the wavelength lambda of R isR610nm, wavelength λ of GG530nm, let B have a wavelength λBThe phase shift of light at the interface of the cathode and the anode is ignored, and key parameters of the DBR microstructure corresponding to RGB under the condition of microcavities of different orders are calculated and obtained
Figure FDA0003119538510000013
4) According to the obtained D values for the RGB pairs under the microcavity condition with different orders, in order to further obtain the values of the thickness and the refractive index of a film layer in the DBR microstructure, the D value under the condition that m is 2 is selected, and the following equation set is obtained:
Figure FDA0003119538510000021
Figure FDA0003119538510000022
Figure FDA0003119538510000023
5) in order to obtain accurate data and feasibility of process realization, the DBR microstructures corresponding to RGB respectively are selected;
6) the material of the film layers with different refractive indexes comprises ITO-n (2.0), SIO-n (1.5), SIN-n (1.86), ALO-n (1.6) and IZO-n (1.8), and the thickness of the film layer is selected from the range of 1nm-100 nm;
7) the respective DBR microstructures corresponding to the RGB pixels are realized through a patterning process of exposure, development and etching.
3. The method of claim 2, wherein there are two schemes for fabricating high performance color silicon-based OLEDs in step 5)Scheme 1: the film materials selected in the respective corresponding DBR microstructures of RGB are the same, namely nRH＝nGH＝nBH，nRL＝nGL＝nBLAt the moment, the thickness relation between the high refractive index film layer and the low refractive index film layer can be obtained through calculation of the equation set, and the thicknesses of the high refractive index film layer and the low refractive index film layer can be selected respectively by combining with an actual process; scheme 2: the thicknesses of the selected films in the respective DBR microstructures corresponding to RGB are the same, i.e. dRH＝dGH＝dBH，dRL＝dGL＝dBLAnd calculating the relation between the refractive indexes of the high refractive index film layer and the low refractive index film layer through the equation system, and selecting the corresponding material by combining an actual process.
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Application publication date: 20210917