CN109817832B - OLED display substrate, preparation method thereof and display device - Google Patents

OLED display substrate, preparation method thereof and display device Download PDF

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CN109817832B
CN109817832B CN201910116909.6A CN201910116909A CN109817832B CN 109817832 B CN109817832 B CN 109817832B CN 201910116909 A CN201910116909 A CN 201910116909A CN 109817832 B CN109817832 B CN 109817832B
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CN109817832A (en
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李慧慧
栾梦雨
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Abstract

The invention provides an OLED display substrate, a preparation method thereof and a display device, belongs to the technical field of display, and can solve the problem that the color purity of a required light source cannot be met due to wider luminous band of the existing OLED luminous material. In the OLED display substrate, the semi-transparent and semi-reflective film, the light-emitting layer and the first electrode form a microcavity structure, the size of the microcavity structure of the sub-pixels with different colors in the direction vertical to the substrate is limited by the adjusting layer, so that the resonance wavelength of the microcavity structure is the same as the preset wavelength range of light emitted by the sub-pixels, the microcavity structure with different sizes is used for correspondingly narrowing the light-emitting bands of the sub-pixels with different colors, the color purity is improved, the light-emitting efficiency and the brightness of the display device are enhanced, and the display device with high contrast ratio and low energy consumption is obtained.

Description

OLED display substrate, preparation method thereof and display device
Technical Field
The invention belongs to the technical field of display, and particularly relates to an OLED display substrate, a preparation method thereof and a display device.
Background
An Organic Light Emitting Diode (OLED) display device is a device for implementing graphic display using a reversible color change phenomenon generated by an organic semiconductor material driven by a current. The OLED display device has the advantages of ultra-light, ultra-thin, high brightness, large viewing angle, low voltage, low power consumption, fast response, high definition, shock resistance, flexibility, low cost, simple process, few raw materials used, high luminous efficiency, etc., and is considered to be the most promising new generation of display technology.
The inventor finds that at least the following problems exist in the prior art: because the luminous band of the OLED luminous material is wider, the color purity of the required light source cannot be met, the luminous efficiency and the brightness of the OLED are limited, and the corresponding display device has low contrast and poor display effect.
Disclosure of Invention
Aiming at the problems that the existing OLED luminescent material has a wider luminescent band and cannot meet the color purity of a required light source, the invention provides an OLED display substrate, a preparation method thereof and a display device.
The technical scheme adopted for solving the technical problems of the invention is as follows:
An OLED display substrate comprises a substrate and a plurality of subpixels of different colors arranged on the substrate; each sub-pixel comprises a light emitting unit and an adjusting unit; each light-emitting unit comprises a reflective first electrode, a transparent second electrode and a light-emitting layer arranged between the first electrode and the second electrode; the OLED display substrate is provided with a light emitting side, the first electrode is arranged far away from the light emitting side compared with the second electrode, the sub-pixel further comprises a semi-transparent and semi-reflective film arranged on the light emitting side of the second electrode, and the semi-transparent and semi-reflective film, the light emitting layer and the first electrode form a microcavity structure; the adjusting unit comprises an adjusting layer, and the adjusting layer is used for limiting the size of the microcavity structure in the direction perpendicular to the substrate so that the resonance wavelength of the microcavity structure is the same as the preset wavelength range of light emitted by the sub-pixel.
Optionally, the OLED display substrate is a bottom-emitting OLED display substrate, and the second electrode is disposed closer to the substrate than the first electrode; the adjusting unit further comprises a planarization layer covering the semi-transparent semi-reflective film, the light emitting unit is arranged on one side, away from the light emitting side, of the planarization layer, and the adjusting layer is arranged between the semi-transparent semi-reflective film and the substrate.
Optionally, the thicknesses of the adjustment layers of the sub-pixels of different colors are different, so that the distances between the transflective film and the light emitting layer of the sub-pixels of different colors are different.
Optionally, the adjustment layer is made of a transparent organic material, and the planarization layer is made of a transparent organic material.
Alternatively, the light emitting layer is made of an organic light emitting material, the first electrode is made of a reflective metal material, and the semi-transparent semi-reflective film is made of a metal material.
Optionally, the thicknesses of the light emitting layers of the different color sub-pixels are different.
Optionally, the microcavity structure has an effective cavity length
Wherein lambda is the resonant wavelength of the microcavity, n i、li is the refractive index and thickness of the ith layer of organic material in the microcavity structure,Phase shift between the semi-transparent semi-reflective film and the ith layer of organic material for light;
The said Wherein n s is the refractive index of the material in contact with the metal material, and n m、km is the real part and the imaginary part of the complex refractive index of the metal layer respectively.
The invention also provides an OLED display device, which comprises the OLED display substrate.
The invention also provides a preparation method of the OLED display substrate, which comprises the following preparation steps:
Forming a plurality of sub-pixels of different colors on a substrate; the forming of the plurality of sub-pixels of different colors includes forming a light emitting unit and forming an adjusting unit;
Wherein,
The formation adjustment unit includes a step of forming an adjustment layer;
The forming of the light emitting unit includes forming a first electrode, a second electrode, and forming a light emitting layer between the first electrode and the second electrode;
The OLED display substrate is provided with a light emitting side, the first electrode is formed farther from the light emitting side than the second electrode, the forming of the sub-pixel further comprises the step of forming a semi-transparent and semi-reflective film on the light emitting side of the second electrode, the semi-transparent and semi-reflective film, the light emitting layer and the first electrode form a microcavity structure, and in the direction perpendicular to the substrate, the microcavity structures of different sub-pixels are different in size, so that the resonance wavelength of the microcavity structure is the same as the preset wavelength range of light emitted by the sub-pixel.
Alternatively, the adjustment layers of the sub-pixels of different colors are formed in one step by step exposure.
Drawings
FIG. 1 is a schematic structural diagram of an OLED display substrate according to embodiment 1 of the present invention;
FIG. 2 is a schematic structural diagram of an OLED display substrate according to embodiment 2 of the present invention;
FIG. 3 is a schematic diagram showing another structure of an OLED display substrate according to embodiment 2 of the present invention;
Wherein, the reference numerals are as follows: 1. a substrate; 2. a light emitting unit; 21. a first electrode; 22. a second electrode; 23. a light emitting layer; 31. an adjustment layer; 32. a planarization layer; 4. a semi-transparent semi-reflective film; 5. a pixel defining structure; 7. a control circuit layer; 8. and an encapsulation layer.
Detailed Description
The present invention will be described in further detail below with reference to the drawings and detailed description for the purpose of better understanding of the technical solution of the present invention to those skilled in the art.
Example 1:
The embodiment provides an OLED display substrate, as shown in fig. 1, including a substrate 1, and a plurality of sub-pixels with different colors disposed on the substrate 1; each sub-pixel comprises a light emitting unit 2 and an adjusting unit; each light emitting unit 2 includes a light reflecting first electrode 21, a transparent second electrode 22, and a light emitting layer 23 provided between the first electrode 21 and the second electrode 22; the OLED display substrate has a light emitting side, the first electrode 21 is arranged farther from the light emitting side than the second electrode 22, the sub-pixel further comprises a transflective film 4 arranged on the light emitting side of the second electrode 22, and the transflective film 4, the light emitting layer 23 and the first electrode 21 form a microcavity structure; wherein the tuning unit comprises a tuning layer 31 for defining the dimensions of the microcavity structure in a direction perpendicular to the substrate 1 such that the resonance wavelength of the microcavity structure is identical to the predetermined wavelength range of the light emitted by the sub-pixel.
In the OLED display substrate of this embodiment, the transflective film 4, the light-emitting layer 23 and the first electrode 21 form a microcavity structure, and the size of the microcavity structure of the sub-pixels with different colors in the direction perpendicular to the substrate 1 is defined by the adjusting layer 31, so that the resonance wavelength of the microcavity structure is the same as the predetermined wavelength range of the light emitted by the sub-pixels, which is equivalent to using the microcavity structure with different sizes to correspondingly narrow the light-emitting bands of the sub-pixels with different colors, thereby improving the color purity, enhancing the light-emitting efficiency and the brightness of the display device, and further obtaining the display device with high contrast and low energy consumption.
Example 2:
The embodiment provides a bottom emission type OLED display substrate, as shown in fig. 2 and 3, which comprises a substrate 1 and a plurality of sub-pixels with different colors arranged on the substrate 1; each sub-pixel comprises a light emitting unit 2 and an adjusting unit; each light emitting unit 2 includes a light reflecting first electrode 21, a transparent second electrode 22, and a light emitting layer 23 provided between the first electrode 21 and the second electrode 22; the OLED display substrate has a light emitting side, the first electrode 21 is arranged farther from the light emitting side than the second electrode 22, the sub-pixel further comprises a transflective film 4 arranged on the light emitting side of the second electrode 22, and the transflective film 4, the light emitting layer 23 and the first electrode 21 form a microcavity structure; wherein the tuning unit comprises a tuning layer 31 for defining the dimensions of the microcavity structure in a direction perpendicular to the substrate 1 such that the resonance wavelength of the microcavity structure is identical to the predetermined wavelength range of the light emitted by the sub-pixel.
The OLED display substrate disclosed in fig. 2 corresponding to the present embodiment is a bottom emission type, where a pixel defining structure 5 is disposed above the substrate 1, and is used to define each light emitting unit 2; in particular, the size of the pixel defining structure 5 may range from 0.8 μm to 1.6 μm in a direction perpendicular to the substrate 1. As shown in fig. 3, a control circuit layer 7 may be further disposed between the adjustment layer 31 and the substrate 1; the side of the first electrode 21 facing away from the substrate 1 is further provided with an encapsulation layer 8. The color of the sub-pixel can be red, green and blue three primary sub-pixels; or cyan, yellow and purple sub-pixels; and can also be red, green, blue and white sub-pixels.
Wherein, "microcavity," "microcavity structure," or "microcavity structure" refers primarily to microcavities having whispering gallery modes; is an optical resonator with dimensions on the order of microns or sub-microns that uses reflection, total reflection, interference, diffraction, or scattering effects at interfaces with discontinuous refractive indices to confine light to a small wavelength region. According to the embodiment, the microcavity length is designed, so that the luminescence center is positioned near the antinode of the standing wave field in the cavity, and the coupling efficiency of the device radiation dipole and the electric field in the cavity is improved, so that the luminescence efficiency and the brightness of the device are improved.
As an alternative implementation in this example, the second electrode 22 is arranged closer to the substrate 1 than the first electrode 21; the adjustment unit further comprises a planarization layer 32 covering the transflective film 4, the light emitting unit 2 is disposed on a side of the planarization layer 32 facing away from the light emitting side, and the adjustment layer 31 is disposed between the transflective film 4 and the substrate 1.
Fig. 2 shows a specific positional relationship of each structural layer, and in particular, in this embodiment, the second electrode 22 is taken as an anode, and the first electrode 21 is taken as a reflective cathode for illustration. More specifically, the thickness of the first electrode 21 may be 90 to 150nm; the thickness of the second electrode 22 may be 90-150nm; it will be appreciated that the specific positional relationship of the structural layers in fig. 2 is merely illustrative, and may be adjusted according to design requirements in practical applications.
In one embodiment, the thickness of the adjustment layer 31 is different for the different color sub-pixels, so that the distance between the transflective film 4 and the light emitting layer 23 is different for the different color sub-pixels.
That is, the distances between the light emitting layers 23 of the sub-pixels of different colors and the first electrode 21 are similar, specifically, the thicknesses of the first electrodes 21 of the respective sub-pixels are the same, the thicknesses of the light emitting layers 23 of the respective sub-pixels are the same, and the distances between the light emitting layers 23 of the respective sub-pixels and the substrate 1 are the same; by designing the thickness of the adjusting layer 31 of the sub-pixels with different colors, the distance between the transflective film 4 on the adjusting layer 31 and the substrate 1 is different, which is equivalent to using the adjusting layer 31 with different thickness to raise the transflective film 4 of the sub-pixels with different colors to adjust the effective cavity length of the microcavity structure in a mode of raising the transflective film 4.
The specific material of the adjustment layer 31 or the planarization layer 32 is not limited in this embodiment, and in one embodiment, the adjustment layer 31 is made of a transparent organic material, and the planarization layer 32 is made of a transparent organic material.
That is, the planarization layer 32 is provided on the light-emitting side of the light-emitting layer 23, and the planarization layer 32 is made of a transparent material so as not to affect the light-emitting of the light-emitting layer 23; the adjustment layer 31 is disposed on the light-emitting side of the light-emitting layer 23, and the adjustment layer 31 is made of a transparent material, so that the light-emitting of the light-emitting layer 23 is not affected.
The specific materials of the first electrode 21, the light-emitting layer 23, and the semi-transparent and semi-reflective film 4 are not limited in this embodiment, and in one embodiment, the light-emitting layer 23 is made of an organic light-emitting material, the first electrode 21 is made of a reflective metal material, and the semi-transparent and semi-reflective film 4 is made of a metal material.
The light-emitting layer 23 may be a multilayer structure, and for example, it may include a light-emitting structure in which a plurality of layers such as a Hole injection layer (Hole InjectionLayer, HIL), a Hole transport layer (Hole Transport Layer, HTL), an organic light-emitting material layer (EMITTING MATERIALLAYER, EML), an electron transport layer (Electron Transport Layer, ETL), and an electron injection layer (Electron Injection Layer, EIL) are combined. The material of the transflective film 4 may be a metal thin film, for example, a thin film made of silver or aluminum metal. The transflective film 4 may be a metal layer having a plurality of holes, the size and density of which may be designed according to the desired light extraction.
In one embodiment, the thicknesses of the light emitting layers 23 of the different color sub-pixels are different.
The inventor finds that the sub-pixels with different colors are usually formed by adopting different organic luminescent materials, wherein the attenuation of the red organic luminescent material, the green organic luminescent material and the blue organic luminescent material in long-term use is inconsistent, and the organic material luminescent layers 23 with different thicknesses are designed for preventing the color bias caused by the inconsistent attenuation.
In one embodiment, the microcavity structure has an effective cavity length
Wherein lambda is the resonant wavelength of the microcavity, n i、li is the refractive index and thickness of the ith layer of organic material in the microcavity structure,Phase shift between the semi-transparent semi-reflective film 4 and the i-th layer organic material for light;
Where n s is the refractive index of the material in contact with the metal material and n m、km is the real and imaginary parts, respectively, of the complex refractive index of the metal layer.
That is, the effective cavity length of the microcavity structure is calculated according to the above formula, and the thickness of the adjustment layer 31 is designed according to the calculation result to satisfy the heightening requirement for the transflective film 4.
In the drawings corresponding to the present embodiment, the sizes, thicknesses, and the like of the respective structural layers are shown only as illustrations. In the process implementation, the projection areas of the structural layers on the substrate 1 can be the same or different, and the required projection areas of the structural layers can be realized through an etching process; meanwhile, the structure shown in the drawings does not limit the geometric shape of each structural layer, for example, the structure can be rectangular as shown in the drawings, trapezoid or other etched shapes, and the structure can be realized by etching.
Example 3:
The present embodiment provides a method for manufacturing an OLED display substrate according to the above embodiment, including the steps of forming a plurality of sub-pixels of different colors on a substrate 1; forming a plurality of sub-pixels of different colors includes a step of forming a light emitting unit 2 and a step of forming an adjustment unit; as shown in fig. 2 and 3, the specific steps of the method are as follows:
An optional S01a control circuit layer 7 is formed on the substrate 1; the substrate 1 may be a rigid substrate 1 made of glass, or may be a flexible substrate 1 made of other materials, which is not limited herein. The size and thickness of the substrate 1 are not limited in this embodiment either, and may be adjusted as needed. Specifically, a thin film transistor may be formed on the cleaned transparent glass substrate 1 to form the control circuit layer 7.
S01b, forming an adjustment layer 31 on the substrate 1 after completing the above steps, specifically, the adjustment layer 31 may be formed using a transparent organic material. Specifically, the thicknesses of the adjustment layers 31 of the sub-pixels of different colors are different. The specific thickness of the adjustment layer 31 of each sub-pixel may be calculated in advance according to the calculation method of embodiment 2 described above.
As a preferable scheme of the present embodiment, the adjustment layers 31 of the sub-pixels of different colors are formed in one step by step exposure.
S01c, forming a semi-transparent and semi-reflective film 4 with the thickness of 100-150nm on the substrate 1 after the steps are completed;
S01d, forming a planarization layer 32 on the substrate 1 after the above steps are completed; specifically, the planarization layer 32 may be deposited to form a layer of transparent organic material. More specifically, the planarization layer 32 may be formed of a transparent material that blocks water and oxygen, so that the planarization layer 32 may play a role in protecting against water and oxygen.
S02a, forming a second electrode 22 on the substrate 1 after the above steps are completed; in this embodiment, the second electrode 22 is taken as an anode, specifically, the patterned anode may be obtained by sputtering, spin coating, exposure and development, etching and stripping, and the material forming the anode may be selected to have better permeability, for example, made of transparent conductive material such as Indium Tin Oxide (ITO).
Optionally S02b, forming a pixel defining structure on the substrate 1 after the above steps are completed, and obtaining a patterned pixel defining layer by spin coating and exposure and development, where the plurality of pixel defining structures of the layer define a plurality of pixel units, and the material of the pixel defining layer may be selected from a resin, polyimide, organosilicon or silicon dioxide.
S02c, forming a light-emitting layer 23 on the substrate 1 after the above steps are completed; specifically, the light-emitting layer 23 may be formed by vacuum evaporation or ink-jet printing. Forming the light emitting layer 23 includes the steps of forming a Hole injection layer (Hole InjectionLayer, HIL), a Hole transport layer (Hole Transport Layer, HTL), an organic light emitting material layer (EMITTING MATERIALLAYER, EML), an electron transport layer (Electron Transport Layer, ETL), and an electron injection layer (Electron Injection Layer, EIL).
S02d, forming a first electrode 21 on the substrate 1 where the above steps are completed, the first electrode 21 may be a reflective cathode, and the reflective cathode may be formed using a metal material such as an alloy material of one or more of Al, ag, mg.
Optionally S03, forming a packaging layer 8 on the substrate 1 which is subjected to the steps; specifically, the encapsulation layers 8 may be formed of a plurality of alternately organic and inorganic materials. More specifically, the encapsulation layer 8 of inorganic material may be formed by a process such as chemical vapor deposition, plasma enhanced chemical vapor deposition, or the like, and the encapsulation layer 8 of organic material may be formed by an inkjet printing process.
The OLED display substrate has a light emitting side, the transflective film 4, the light emitting layer 23 and the first electrode 21 form a microcavity structure, and the microcavity structures of different sub-pixels have different dimensions in a direction perpendicular to the substrate 1, so that the resonant wavelength of the microcavity structure is the same as a predetermined wavelength range of light emitted from the sub-pixel.
Example 4:
The embodiment provides a display device, which comprises any one of the OLED display substrates. The display device may be: electronic paper, OLED panel, mobile phone, tablet computer, television, display, notebook computer, digital photo frame, navigator, etc.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.

Claims (6)

1. An OLED display substrate is characterized by comprising a substrate and a plurality of subpixels of different colors arranged on the substrate; each sub-pixel comprises a light emitting unit and an adjusting unit; each light-emitting unit comprises a reflective first electrode, a transparent second electrode and a light-emitting layer arranged between the first electrode and the second electrode; the OLED display substrate is provided with a light emitting side, the first electrode is arranged far away from the light emitting side compared with the second electrode, the sub-pixel further comprises a semi-transparent and semi-reflective film arranged on the light emitting side of the second electrode, and the semi-transparent and semi-reflective film, the light emitting layer and the first electrode form a microcavity structure; the adjusting unit comprises an adjusting layer and a light emitting layer, wherein the adjusting layer is used for limiting the size of the microcavity structure in the direction vertical to the substrate so that the resonance wavelength of the microcavity structure is the same as the preset wavelength range of light emitted by the sub-pixel; the thicknesses of the light-emitting layers of the sub-pixels with different colors are different; the OLED display substrate is a bottom-emitting OLED display substrate, and the second electrode is arranged closer to the substrate than the first electrode; the adjusting unit further comprises a flattening layer covering the semi-transparent and semi-reflective film, the light emitting unit is arranged on one side, away from the light emitting side, of the flattening layer, and the adjusting layer is arranged between the semi-transparent and semi-reflective film and the substrate; the thicknesses of the planarization layers at the corresponding positions of the sub-pixels with different colors are different, so that the distances between the semi-transparent and semi-reflective films of the sub-pixels with different colors and the light-emitting layer are different; the planarization layer is composed of a transparent organic material.
2. The OLED display substrate according to claim 1, wherein the light-emitting layer is made of an organic light-emitting material, the first electrode is made of a reflective metal material, and the semi-transparent and semi-reflective film is made of a metal material.
3. The OLED display substrate according to claim 1, wherein the microcavity structure has an effective cavity length
Wherein lambda is the resonant wavelength of the microcavity, n i、li is the refractive index and thickness of the ith layer of organic material in the microcavity structure,Phase shift between the semi-transparent semi-reflective film and the ith layer of organic material for light;
The said Wherein n s is the refractive index of the material in contact with the metal material, and n m、km is the real part and the imaginary part of the complex refractive index of the metal layer respectively.
4. An OLED display device comprising the OLED display substrate of any one of claims 1-3.
5. A method for preparing an OLED display substrate, applied to preparing the OLED display substrate according to any one of claims 1 to 3; the preparation method is characterized by comprising the following preparation steps:
forming a plurality of sub-pixels of different colors on a substrate; the forming of the plurality of sub-pixels of different colors includes forming a light emitting unit and forming an adjusting unit; wherein,
The formation adjustment unit includes a step of forming an adjustment layer; the forming and adjusting unit further comprises a step of forming a planarization layer covering the semi-transparent and semi-reflective film, the light emitting unit is arranged on one side of the planarization layer, which is away from the light emitting side, and the adjusting layer is arranged between the semi-transparent and semi-reflective film and the substrate;
The forming of the light emitting unit includes forming a first electrode, a second electrode, and forming a light emitting layer between the first electrode and the second electrode; the thicknesses of the light emitting layers of the sub-pixels of different colors are different;
The OLED display substrate is a bottom emission type OLED display substrate, the OLED display substrate is provided with a light emitting side, the first electrode is formed far away from the light emitting side compared with the second electrode, the forming of the sub-pixel further comprises the step of forming a semi-transparent and semi-reflective film on the light emitting side of the second electrode, the semi-transparent and semi-reflective film, the light emitting layer and the first electrode form a micro-cavity structure, and in the direction perpendicular to the substrate, the sizes of the micro-cavity structures of different sub-pixels are different, so that the resonance wavelength of the micro-cavity structure is the same as the preset wavelength range of light emitted by the sub-pixel.
6. The method for manufacturing an OLED display substrate according to claim 5, wherein the display substrate is the OLED display substrate according to claim 2, and the adjustment layers of the sub-pixels of different colors are formed in one step by step exposure.
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